NTE378 [NTE]
Silicon Complementary Transistors Power Amp Driver, Output, Switch; 硅互补晶体管功放驱动，输出，开关
| 型号： | NTE378 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Complementary Transistors Power Amp Driver, Output, Switch |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE377 (NPN) & NTE378 (PNP)
Silicon Complementary Transistors
Power Amp Driver, Output, Switch
Description:
The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type pack-
age designed for general purpose power amplification and switching such as output or driver stages
in applications such as switching regulators, converters, and power amplifiers.
Features:
D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ 8A
D Fast Switching Speeds
D Complementary Pairs Simplifies Designs
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Power Dissipation, PD
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RΘ
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
JC
Thermal Resistance, Junction–to–Ambient, RΘ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
JA
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +275°C
Note 1. Pulse Width ≤ 6ms, Duty Cycle ≤ 50%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
OFF Characteristics
Symbol
Test Conditions
Min
Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
DC Current Gain
I
V
V
= 80V, V = 0
–
–
–
–
10
µA
µA
CES
CE
BE
I
= 5V
100
EBO
EB
h
V
V
= 1V, I = 2A, T = +25°C
60
40
–
–
–
–
–
–
FE
CE
C
J
= 1V, I = 4A, T = +25°C
–
CE
C
J
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
V
V
I = 8A, I = 400mA
C
1.0
1.5
V
V
CE(sat)
B
I = 8A, I = 800mA
C
–
BE(sat)
b
Collector Capacitance
NTE377
C
cb
V
CB
= 10V, f
= 1MHz
–
–
130
230
–
–
pF
pF
test
NTE378
Gain Bandwidth Product
NTE377
f
T
I = 500mA, V = 10V, f = 20MHz
–
–
50
40
–
–
MHz
MHz
C
CE
NTE378
Switching Times
Delay and Rise Time
NTE377
t + t
d r
I = 5A, I = 500mA
–
–
–
300
135
500
–
–
–
ns
ns
ns
C
B1
NTE378
Storage Time
t
s
I = 5A, I = I = 500mA
C B1 B2
Fall Time
NTE377
t
f
–
–
140
100
–
–
ns
ns
NTE378
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500 (12.7)
Max
.250
(6.35)
Max
.500 (12.7)
Min
.070 (1.78) Max
Base
Emitter
Collector/Tab
.100 (2.54)
©2020 ICPDF网 联系我们和版权申明