NTE5491 [NTE]

Silicon Controlled Rectifier (SCR); 可控硅整流器（ SCR）


型号：	NTE5491
厂家：	NTE ELECTRONICS
描述：	Silicon Controlled Rectifier (SCR) 可控硅整流器（ SCR）栅极触发装置可控硅整流器
文件：	总2页 (文件大小：25K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NTE5491 thru NTE5496

Silicon Controlled Rectifier (SCR)

10 Amp

Description:

The NTE5491 through NTE5496 are silicon controlled rectifiers designied primarily for half–wave AC

control applications such as motor controls, heating controls, power supplies, or wherever half–wave

silicon gate–controlled, solid–state devices are needed.

Features:

D Glass–Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability

D Blocking Voltage to 600 Volts

Absolute Maximum Ratings: (T_J= +125°C unless otherwise specified)

Peak Repetitive Off–State Blocking Voltage, V_RRM, V_DRM

NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V

Peak Non–Repetitive Reverse Voltage, V_RSM

NTE5491 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V

NTE5492 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V

NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 720V

RMS On–State Current (All Conduction Angles), I_T(RMS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A

Average On–State Current (T_C= +65°C), I_T(AV). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A

Peak Non–Repetitive Surge Current, I_TSM

(One cycle, 60Hz, Preceeded and followed by rated Current and Voltage) . . . . . . . . . . 150A

Circuit Fusing Considerations (T_J= –40° to +125°C, t = 1 to 8.3ms), I²t . . . . . . . . . . . . . . . . . 93A²s

Peak Gate Power Dissipation, P_GM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W

Average Gate Power Dissipation, P_G(AV). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW

Peak Forward Gate Current, I_GT

NTE5491, NTE5492, NTE5494 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A

NTE5496 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A

Operating Junction Temperature Range, T_J. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +125°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Typical Thermal Resistance, Junction–to–Case, R_thJC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W

Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 in.lb.

Electrical Characteristics: (T_J= +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Average Forward Blocking Current I_D(AV)Rated V_DRM, Gate Open

NTE5491

NTE5492

NTE5494

NTE5496

T_J= +125°C

–

6.5 mA

6.0 mA

4.0 mA

2.5 mA

Average Reverse Blocking Current I_R(AV)Rated V_RRM, Gate Open

NTE5491

T_J= +125°C

–

6.5 mA

6.0 mA

4.0 mA

2.5 mA

NTE5492

NTE5494

NTE5496

Peak Forward Blocking Current

Peak Reverse Blocking Current

I_DRMRated V_DRM, Gate Open

µA

I_RRMRated V_RRM, Gate Open,

T_J= +125°C

Peak On–State Voltage

DC Gate–Trigger Current

DC Gate–Trigger Voltage

Gate Non–Trigger Voltage

DC Holding Current

V_TM

I_GT

I_TM= 50.3A Peak, Note 1

V_AK= 12VDC, R_L= 50Ω

–

V_GT

V_GD

I_H

0.65 2.0

Rated V_DRM, R_L= 50Ω, T_J= +125°C 0.25

–

V_AK= 12V, Gate Open

–

7.3 50

V/µs

Critical Rate–of–Rise of Off–State

dv/dt Rated V_DRM, Exponential Waveform,

–

Voltage

T_C= +125°C, Gate Open

Note 1. Pulse Test: Pulse Width ≤ 1ms, Duty Cycle ≤ 2%.

.562

(14.28)

Max

Gate

Cathode

1.193

(30.33)

Max

.200 (5.08) Max

.453

(11.5)

Max

Anode

1/4–28 UNF–2A

相关型号：