NTE5498 [NTE]

Silicon Controlled Rectifier (SCR) 12 Amp; 可控硅整流器（ SCR） 12安培


型号：	NTE5498
厂家：	NTE ELECTRONICS
描述：	Silicon Controlled Rectifier (SCR) 12 Amp 可控硅整流器（ SCR） 12安培栅极触发装置可控硅整流器局域网
文件：	总2页 (文件大小：26K)
中文：	中文翻译
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NTE5498 & NTE5499

Silicon Controlled Rectifier (SCR)

12 Amp

Description:

The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated

PNPN devices in a TO220 type package designed for general purpose high current applications

where moderate gate sensitivity is required.

Absolute Maximum Ratings: (T_A= +25°C unless otherwise specified)

Peak Repetitive Off–State Voltage (T_J= –40° to +125°C, R_GK= 1kΩ), V_DRM, V_RRM

NTE5498 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V

NTE5499 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

RMS On–State Current (All Conduction Angles, T_C= +85°C), I_T(RMS). . . . . . . . . . . . . . . . . . . . . 12A

Average On–State Current (Half Cycle, 180° Conduction Angle, T_C= +85°C), I_T(AV). . . . . . . . 7.6A

Non–Repetitive On–State Current (Half Cycle, 60Hz), I_TSM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132A

Non–Repetitive On–State Current (Half Cycle, 50Hz), I_TSM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A

Circuit Fusing Considerations (Half Cycle, t = 10ms), I²t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A²s

Peak Gate Current (10µs Max), I_GM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A

Peak Gate Dissipation (10µs Max), P_GM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W

Average Gate Dissipation (20ms Max), P_G(AV). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Operating Junction Temperature Range, T_J. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C

Thermal Resistance, Junction–to–Case, R_thJC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W

Thermal Resistance, Junction–to–Ambient, R_thJA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W

Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T_L. . . . . . . . . . . . . . . +250°C

Electrical Characteristics: (T_A= +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Off–State Leakage Current

T_J= +125°C

T_J= +25°C

–

1.5

5.0

1.8

1.0

µA

I_DRM

I_RRM

V_DRM+ V_RRM, R_GK= 1kΩ

On–State Voltage

V_T

I_T= 24A, T_J= +25°C

On–State Threshold Voltage V_T(TO)T_J= +125°C

r_T

T_J= +125°C

V_D= 7V

mΩ

On–State Slope Resistance

Gate–Trigger Current

Gate–Trigger Voltage

I_GT

V_GT

V_D= 7V

2.0

Electrical Characteristics (Cont’d): (T_A= +25°C unless otherwise specified)

Parameter

Holding Current

Symbol

Test Conditions

Min Typ Max Unit

I_H

I_L

R_GK= 1kΩ

–

V/µs

A/µs

Latching Current

Critical Rate of Voltage Rise

Critical Rate of Current Rise

Gate Controlled Delay Time

Commutated Turn–Off Time

dv/dt V_D= .67 x V_DRM, R_GK= 1kΩ, T_J= +125°C 100

di/dt

t_gd

t_q

I_G= 50mA, di_G/dt = 0.5A/µs, T_J= +125°C 100

–

I_G= 50mA, di_G/dt = 0.5A/µs

–

500

V_D= .67 x V_DRM, V_R= 35V, I_T= I_T(AV)

µs

T_C= +85°C

.420 (10.67)

Max

.110 (2.79)

Anode

.147 (3.75)

Dia Max

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

.070 (1.78) Max

Cathode

Gate

Anode

.100 (2.54)

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