NTE5572 [NTE]
Silicon Controlled Rectifier for Phase Control Applications; 可控硅整流器的相位控制应用
| 型号： | NTE5572 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Controlled Rectifier for Phase Control Applications |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE5570, NTE5572, & NTE5574
Silicon Controlled Rectifier
for Phase Control Applications
Electrical Characteristics: (Maximum values @ TJ = +125°C unless otherwise specified)
Repetitive Peak Voltages, VDRM & VRRM
NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5572 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5574 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Non–Repetitive Peak Reverse Blocking Voltage, VRSM
NTE5570 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5572 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
NTE5574 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V
Average On–State Current (Half Sine Wave, 180°, TC = +85°C), IT(AV) . . . . . . . . . . . . . . . . . . . . 80A
RMS On–State Current (DC @ TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125A
Peak One–Cycle, Non–Repetitive Surge Current (10ms Duration, Sinusoidal Half Wave), ITSM
No Voltage Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1900A
100% VRRM Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600A
Maximum I2t for Fusing (10ms Duration, Sinusoidal Half Wave), I2t
No Voltage Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18000A2sec
100% VRRM Reapplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12700A2sec
Peak Positive Gate Current (5ms Pulse Width), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak Positive Gate Voltage (5ms Pulse Width), +VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Peak Negative Gate Voltage (5ms Pulse Width), –VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Average Gate Power (f = 50Hz, Duty Cycle = 50%), PG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W
Peak Gate Power (50ms Pulse Width), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12W
Rate of Rise of Off–State Voltage (Exponential to 67% Rated VDRM), dv/dt . . . . . . . . . . . . 500V/µs
Rate of Rise of ON–State Current, di/dt
(Gate Drive 20V, 65Ω, with tr = 0.5µs, Vd = Rated VDRM, ITM = 2 x di/dt snubber 0.2µF)
Non–Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A/µs
Typical Delay Time, td
(Gate Pulse: 10V, 15Ω Source, tp = 6µs, tr = 0.1µs, Vd = rated VDRM, ITM = 50A) . . . . . 1µs
Typical Turn–On Time, tq
(ITM = 50A, di/dt = –5A/µs min, VR = 50V, dv/dt = 20V/µs, Gate Bias: 0V 25Ω, tp = 500µs) 110µs
On–State Voltage (IPk = 250A, 10ms Sine Pulse), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V
Repetitive Peak Off–State Current (At VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Repetitive Peak Reverse Current (At VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Maximum Gate Current Required to Trigger, IGT
(6V Anode–to–Cathode Applied, TJ = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA
Maximum Gate Voltage Required to Trigger, VGT
(6V Anode–to–Cathode Applied, TJ = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5V
Maximum Holding (Anode Supply 12V Resistive Load, TJ = +25°C), IH . . . . . . . . . . . . . . . . . 150mA
Maximum Gate Voltage which will not Trigger any Device, VGD . . . . . . . . . . . . . . . . . . . . . . . . . 0.25V
Electrical Characteristics (Cont’d): (Maximum values @ TJ = +125°C unless otherwise specified)
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case (DC Operation), RtnJC . . . . . . . . . . . . . . . . . . . . . . . 0.3°C/W
Thermal Resistance, Case–to–Heat Sink, RthC–HS
(Mounting Surface Smooth, Flat, and Greased) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1°C/W
1.227 (31.18) Max
(Across Corners)
.875 (22.22) Dia
(Ceramic)
For No. 6 Screw
Cathode
.280 (7.11)
Dia Max
Gate
(White)
7.500
(190.5)
Max
Cathode
(Red)
6.260
(159.0)
Max
(Terminal 3)
(Terminals 1 & 2)
2.500
(63.5)
Max
1.031 (26.18)
Dia Max
.827
(27.0)
Max
Seating Plane
.500 (12.7) Max)
1/2–20 UNF
Anode
相关型号：
©2020 ICPDF网 联系我们和版权申明