NTE56008 [NTE]

TRIAC, 15 Amp; 可控硅, 15安培
NTE56008
型号: NTE56008
厂家: NTE ELECTRONICS    NTE ELECTRONICS
描述:

TRIAC, 15 Amp
可控硅, 15安培

可控硅 三端双向交流开关
文件: 总2页 (文件大小:23K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NTE56004 thru NTE56010  
TRIAC, 15 Amp  
The NTE56004 thru NTE56010 series of TRIACs are designed primarily for full–wave AC control ap-  
plications, such as solid–state relays, motor controls, heating controls and power supplies; or wherev-  
er full–wave silicon gate controlled solid–state devices are needed. TRIAC type thyristors switch from  
a blocking to a conducting state for either polarity of applied anode voltage with positive or negative  
gate triggering.  
Features:  
D Blocking Voltage from 200 to 800 Volts  
D All Diffused and Glass Passivated Junctions  
D Small, Rugged, TO220 package for Low Thermal Resistance, High Heat Dissipation and Durability  
D Gate Triggering specified in Four Quadrants  
Absolute Maximum Ratings:  
Peak Repetitive Off–State Voltage, (TJ = –40° to 125°C), VDRM  
NTE56004 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V  
NTE56006 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  
NTE56008 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V  
NTE56010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V  
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V  
On–State Current RMS (Full Cycle Sine Wave 50 to 60Hz,TC = +90°C), IT(RMS) . . . . . . . . . . . 15A  
Circuit Fusing (t = 8.3ms) I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93A2s  
Peak Surge Current (One Full Cycle, 60Hz, TC = +80°C), ITSM  
Preceded and followed by rated current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A  
Peak Gate Power (TC = +80°C, Pulse Width = 2µs), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W  
Average Gate Power (TC = +80°C, t = 8.3ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW  
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2°C/W  
Electrical Characteristics (TC = 25°C, and either polarity of MT2 to MT1 Voltage, unless  
otherwise noted)  
Characteristics  
Symbol  
IDRM  
Min  
Typ  
Max  
Unit  
Peak Forward or Reverse Blocking Current  
,
(Rated VDRM, or VRRM, Gate open)  
TJ=25°C  
TJ=125°C  
IRRM  
10  
2
µA  
mA  
Peak OnState Voltage  
VTM  
1.3  
1.6  
Volts  
(ITM = 21 A Peak; Pulse Width = 1 to 2ms,  
Duty Cycle 2%)  
Gate Trigger Current (Continuous dc)  
(VD = 12Vdc, RL = 100 Ohms)  
MT2(+) G(+), MT2(+) G(), MT2() G()  
MT2(), G(+)  
IGT  
mA  
50  
75  
Gate Trigger Voltage (Continuous dc)  
(VD = 12Vdc, RL = 100 Ohms)  
MT2(+) G(+), MT2(+) G()  
MT2() G()  
VGT  
Volts  
0.9  
1.1  
1.4  
2
2
2.5  
MT2() G(+)  
(VD = Rated VDRM, RL = 10k Ohms, TJ = 110°C)  
MT2(+) G(+), MT2() G(), MT2(+) G()  
MT2() G(+)  
0.2  
0.2  
Holding Current (Either Direction)  
IH  
tgt  
6
40  
mA  
(VD = 12Vdc, IT = 200mA, Gate Open)  
TurnOn Time  
1.5  
µs  
(VD = Rated VDRM, ITM = 17A)  
(IGT = 120mA, Rise Time = 0.1µs, Pulse Width = 2µs)  
Critical Rate of Rise of Commutation Voltage  
(VD = Rated VDRM, ITM = 21 A, Commutating  
di/dt = 8A/ms, Gate Unenergized, TC = 80°C)  
dv/dt(c)  
5
V/µs  
.420 (10.67)  
Max  
.110 (2.79)  
MT  
2
.147 (3.75)  
Dia Max  
.500  
(12.7)  
Max  
.250  
(6.35)  
Max  
.500  
(12.7)  
Min  
.070 (1.78) Max  
MT  
Gate  
MT  
1
.100 (2.54)  
2

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