NTE5671 [NTE]

TRIAC 800VRM, 20A TO220 (Isolated); TRIAC 800VRM , 20A TO220 (隔离)
NTE5671
型号: NTE5671
厂家: NTE ELECTRONICS    NTE ELECTRONICS
描述:

TRIAC 800VRM, 20A TO220 (Isolated)
TRIAC 800VRM , 20A TO220 (隔离)

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NTE5671  
TRIAC – 800VRM, 20A  
TO220 (Isolated)  
Description:  
The NTE5671 TRIAC is designed for use in applications requiring high bidirectional transient and  
blocking voltage capability. Typical applications include AC power control circuits such as lighting, in-  
dustrial and domestic heating, motor control and switching systems..  
Absolute Maximum Ratings:  
Non–Repetitive Peak Off–State Voltage (Either Direction, t 10ms), VDSM . . . . . . . . . . . . . . . . 800V  
Repetitive Peak Off–State Voltage (Either Direction, δ ≤ 0.01), VDRM . . . . . . . . . . . . . . . . . . . . . 800V  
Crest Working Off–State Voltage (Either Direction), VDWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  
RMS On–State Current (Conduction Angle 360°, TH = +67°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . 16A  
Repetitive Peak On–State Current, ITRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A  
Non–Repetitive Peak On–State Current, ITSM  
(TJ = +120°C Prior to Surge, t = 20ms, Full Sine Wave) . . . . . . . . . . . . . . . . . . . . . . . . . . 140A  
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95A2s  
Rate of Rise of On–State Current After Triggering, dIT/dt  
(IG = 200mA to IT = 20A, dIGdt = 0.2A/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A/µs  
Average Power Dissipation (Averaged Over any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . 0.5W  
Peak Power Dissipation, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0W  
RMS Isolation Voltage (From All Three Terminals to External Heatsink[Peak]), V(ISO) . . . . . . 1000V  
Isolation Capacitance (From T2 to External Heatsink), C(ISO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12pF  
Full Operating Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +120°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C  
Typical Thermal Resistance, Junction–to–Heatsink (See Mounting Instructions), RthJH  
With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5K/W  
Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5K/W  
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W  
Note 1. Mounted on a printed circuit board at any lead length. The quoted value of RthJA should be  
used only when no leads of other dissipating components run to the same tie–point.  
Electrical Characteristics:  
Parameter  
(TJ = +25°C, unless otherwise specified. Polarities, positive or negative,  
are identified with respect to MT1.)  
Symbol  
Test Conditions  
IT = 20A  
Min Typ Max Unit  
OnState Voltage (Measured under pulse  
conditions to prevent excessive  
dissipation)  
VT  
1.6  
V
Rate of Rise of OffState Voltage  
dVD/dt TJ = +120°C, Gate Open  
100 V/µs  
V/µs  
(That will not trigger any device)  
Rate of Change of Commutating Voltage  
(That will not trigger any device)  
dVcom/dt dIcom/dt = 7.2A/ms,  
IT(RMS) = 16A, TH = 70°C,  
VD = 400V, Gate Open  
10  
OffState Current  
ID  
VD = 400V, TJ = +120°C  
0.5 mA  
Gate Voltage (That will trigger all devices)  
VGT  
1.5  
V
Gate Voltage (That will not trigger any device)  
MT2 (+), G (+); MT2 (), G ()  
VGD  
IGT  
VD = 400V, TJ = +120°C  
250 mV  
Gate Current (That will trigger all devices)  
MT2 (+), G (+)  
G to MT1  
35  
35  
35  
70  
Ma  
mA  
mA  
mA  
MT2 (+), G ()  
MT2 (), G ()  
MT2 (), G (+)  
Holding Current  
IH  
IL  
30 mA  
Latching Current  
MT2 (+), G (+)  
VD = 12V  
40 Ma  
60 mA  
40 mA  
60 mA  
MT2 (+), G ()  
MT2 (), G ()  
MT2 (), G (+)  
Mounting Instructions:  
1. The TRIAC may be soldered directly into the circuit, but the maximum permissible temperature  
of the soldering iron or bath is +275°C; it must not be in contact with the joint for more than 5 seconds.  
Soldered joints must be at least .185(4.7mm) from the seal.  
2. The leads should not be bent less than .094(2.4mm) from the seal, and should be supported during  
bending. The leads can be bent, twisted or straightened by 90° maximum. The minimum bending  
radius is .039(1mm).  
3. Mounting by means of a spring clip (not provided by NTE) is the best mounting method because  
if offers good thermal contact under the crystal area and slightly lower RthJH values than screw  
mounting. However, if a screw is used, it should be an M3 crossrecess panhead. Care should  
be taken to avoid damage to the plastic body.  
4. For good thermal contact, heatsink compound should be used between the seating plane and the  
heatsink. values of RthJH given for mounting with heatsink compound refer to the use of a metallic–  
oxide loaded compound. Ordinary silicone grease is not recommended.  
5. Rivit mounting is not recommended.  
6. The heatsink must have a flatness in the mounting area of .0007 (.02mm) maximum per .393  
(10mm). Mounting holes must be deburred.  
MT  
MT  
1
2
Gate  
.402 (10.2) Max  
.224 (5.7) Max  
.173 (4.4)  
Max  
.114 (2.9)  
Max  
.122 (3.1)  
Dia  
.295  
(7.5)  
.165  
(4.2)  
.669  
(17.0)  
Max  
MT2  
MT1  
Gate  
.531  
(13.5)  
Min  
.100 (2.54)  
.059 (1.5) Max  

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