NTE5810 [NTE]
Silicon Power Rectifier Diode, 12 Amp; 硅功率整流二极管， 12安培
| 型号： | NTE5810 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Power Rectifier Diode, 12 Amp |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE5810 & NTE5811,
NTE5870 thru NTE5891
Silicon Power Rectifier Diode, 12 Amp
Description:
The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier
diodes in a DO4 type package designed for battery chargers, converters, power supplies, and ma-
chine tool controls.
Features:
D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode–to–Case or Cathode–to–Case Style
Ratings and Characteristics:
Average Forward Current (TC = +144°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Maximum Forward Surge Current, IFSM
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230A
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240A
Fusing Current, I2t
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260A2s
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240A2s
Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3580A2ps
Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1200V
Voltage Ratings: (TJ = +175°C)
V
–Max
V
–Max
V –Max.
Direct Reverse
Voltage
V
I
–Max
RM
NTE Type Number
RRM
RSM
R
R(SR)
Repetitive Peak
Reverse Volt.
(V)
Non–Repetitive Peak
Reverse Voltage
(V)
Minimum Avalanche
Reverse Current
Rated V
Cathode
to Case
Anode
to Case
Voltage
(V)
RRM
(V)
(mA)
5870
5872
5874
5876
5878
5880
5882
5886
5890
5810
5871
5873
5875
5877
5879
5881
5883
5887
5891
5811
50
100
200
300
400
500
600
800
1000
1200
75
150
275
385
500
613
725
950
1200
1400
50
100
200
300
400
50
–
–
12
12
12
12
12
12
12
12
12
12
–
–
500
626
750
950
1150
1350
600
800
1000
1200
Electrical Specifications:
Parameter
Symbol
Test Conditions
180° sinusoidal condition, T = +144°C Max
Rating Unit
Maximum Average Forward Current
Maximum RMS Forward Current
I
12
19
A
A
A
A
A
A
F (AV)
C
I
F(RMS)
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
225
235
265
280
351
320
3511
1.26
0.68
Maximum Peak One–Cycle
I
Sinusoidal Half Wave,
No voltage reapplied
FSM
Non–Repetitive Surge Current
100% rated voltage reapplied,
T = +175°C
J
2
2
2
A s
Maximum I t for Individual Device
I t
100% rated voltage reapplied,
Fusing
Initial T = +175°C
J
2
A s
2
2
2
t = 0.1 to 10ms, No voltage reapplied, Note 1
= 38A, T = +25°C
Maximum I pt
I pt
A pt
Maximum Peak Forward Voltage
V
FM
I
V
V
FM
J
Maximum Value of Threshold
Voltage
V
M (TO)
T = +175°C
J
Maximum Value of Forward Slope
Resistance
r
T = +175°C
J
13.51
mΩ
t
Note 1. I2t for time tx = I2Ǩt S Ǩtx
Thermal–Mechanical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
°C
Maximum Operation Junction Temperature
Maximum Storage Temperature
T
–65 to + 175
–65 to + 200
2.0
J
T
stg
°C
Maximum Internal Thermal Resistance
R
thJC
DC operation
K/W
Junction–to–Case
Thermal Resistance, Case–to–Sink
Mounting Torque
R
Mounting surface flat, smooth and
greased
0.5
K/W
thCS
T
Non–lubricated threads
1.2 – 1.5
(10.5 – 13.5) (in•lb)
m•N
Approximate Weight
wt
11 (0.25) g (oz)
.250 (6.35) Max
.437
(11.1)
Max
.175 (4.45) Max
10–32 NF–2A
.060 (1.52)
Dia Min
.405
(10.3)
Max
.453
(11.5)
Max
.424 (10.8)
Dia Max
1.250 (31.75) Max
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