NTE5850 [NTE]
Silicon Power Rectifier Diode, 6 Amp; 硅功率整流二极管， 6安培
| 型号： | NTE5850 |
| 厂家： | 
NTE ELECTRONICS |
| 描述： | Silicon Power Rectifier Diode, 6 Amp |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTE5844 & NTE5845,
NTE5912 thru NTE5933
Silicon Power Rectifier Diode, 20 Amp
Description and Features:
The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier
diodes in a DO4 type package designed for battery chargers, converters, power supplies, and ma-
chine tool controls.
Features:
D High Surge Current Capability
D High Voltage Available
D Designed for a Wide Range of Applications
D Available in Anode–to–Case or Cathode–to–Case Style
Ratings and Characteristics:
Average Forward Current (TC = +140°C Max), IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Maximum Forward Surge Current (60Hz), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400A
Fusing Current (60Hz), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 493A2s
Fusing Current, I2pt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7640A2ps
Maximum Reverse Recovery Voltage Range, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 to 1200V
Voltage Ratings: (TJ = +175°C)
V
–Max
V
–Max
V –Max.
Direct Reverse
Voltage
V
I
–Max
RM
NTE Type Number
RRM
RSM
R
R(SR)
Repetitive Peak
Reverse Volt.
(V)
Non–Repetitive Peak
Reverse Voltage
(V)
Minimum Avalanche
Reverse Current
Rated V
Cathode
to Case
Anode
to Case
Voltage
(V)
RRM
(V)
(mA)
5912
5914
5916
5918
5920
5922
5924
5928
5932
5844
5913
5915
5917
5919
5921
5923
5925
5929
5933
5845
50
100
200
300
400
500
600
800
1000
1200
75
150
275
385
500
613
725
950
1200
1400
50
100
200
300
400
50
–
–
12
12
12
12
12
12
12
12
12
12
–
–
500
613
725
950
1200
1350
600
800
1000
1200
Electrical Specifications:
Parameter
Symbol
Test Conditions
180° sinusoidal condition, T = +150°C Max
Rating Unit
Maximum Average Forward Current
I
20
400
425
437
462
540
493
765
700
7640
1.23
0.78
A
A
A
A
A
F (AV)
C
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Maximum Peak One–Cycle
I
Sinusoidal Half Wave,
No voltage reapplied
FSM
Non–Repetitive Surge Current
100% rated voltage reapplied,
T = +175°C
J
2
2
2
A s
Maximum I t for Fusing
I t
No voltage reapplied,
Initial T = +175°C
J
2
A s
2
2
A s
Maximum I t for Individual Device
100% rated voltage reapplied
Fusing
2
A s
2
2
2
t = 0.1 to 10ms, No voltage reapplied, Note 1
= 63A, T = +25°C
Maximum I pt
I pt
A pt
Maximum Peak Forward Voltage
V
FM
I
V
V
FM
J
Maximum Value of Threshold
Voltage
V
M (TO)
T = +175°C
J
Maximum Value of Forward Slope
Resistance
r
T = +175°C
J
7.55
mΩ
t
Note 1. I2t for time tx = I2Ǩt S Ǩtx
Thermal–Mechanical Specifications:
Parameter
Symbol
Test Conditions
Rating
Unit
°C
Maximum Operation Junction Temperature
Maximum Storage Temperature
T
–65 to + 175
–65 to + 200
1.6
J
T
stg
°C
Maximum Internal Thermal Resistance
R
thJC
DC operation
K/W
Junction–to–Case
Thermal Resistance, Case–to–Sink
R
thCS
Mounting surface flat, smooth and
greased
0.25
K/W
Mounting Torque
T
Non–lubricated threads
1.2 – 1.5
(10.5 – 13.5) (in•lb)
m•N
Approximate Weight
wt
11 (0.25) g (oz)
.250 (6.35) Max
.437
(11.1)
Max
.175 (4.45) Max
10–32 NF–2A
.060 (1.52)
Dia Min
.405
(10.3)
Max
.453
(11.5)
Max
.424 (10.8)
Dia Max
1.250 (31.75) Max
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