M29W160FBT80ZA3E [NUMONYX]
16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory; 16兆或32兆比特（ ×8或×16 ，引导块） 3 V电源闪存
| 型号： | M29W160FBT80ZA3E |
| 厂家： | 
NUMONYX B.V |
| 描述： | 16 Mbit or 32 Mbit (x 8 or x 16, boot block) 3 V supply Flash memory |
| 文件： | 总57页 (文件大小：1070K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M29W160FT M29W160FB
M29W320FT M29W320FB
16 Mbit or 32 Mbit (x 8 or x 16, boot block)
3 V supply Flash memory
Features
■ Supply voltage
– V = 2.5 V to 3.6 V (access time: 80 ns) or
CC
2.7 to 3.6 V (access time: 70 ns) for
Program, Erase and Read
– V = 12 V for Fast Program (optional,
TSOP48 (N)
12 x 20 mm
PP
available in the M29W320FT/B only)
■ Access time: 70, 80 ns
■ Programming time
FBGA
– 10 µs per byte/word typical
■ Memory organization:
– M29W160FT/B: 35 blocks including 1 boot
block (top or bottom location), 2 parameter
blocks and 32 main blocks
TFBGA48 (ZA)
6 x 8 mm
– M29W320FT: 67 blocks including 1 boot
block (top or bottom location), 2 parameter
blocks and 64 main blocks
■ Electronic signature
– Manufacturer code: 0020h
– Top device codes
M29W160FT: 22C4h
M29W320FT: 22CAh
– Bottom device codes
M29W160FB: 2249h
M29W320FB: 22CBh
■ Program/Erase controller
– Embedded byte/word program algorithms
■ Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
■ Unlock Bypass Program command
■ Automotive device grade 3:
– Temperature: –40 to 125 °C
– Automotive grade certified
– Faster production/batch programming
■ V /WP pin for Fast program and Write Protect
PP
(available in the M29W320FT/B only)
■ TSOP48 package is ECOPACK®
■ Temporary block unprotection mode
■ Common Flash interface
– 64 bit security code
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
March 2008
Rev 3
1/57
www.numonyx.com
1
Contents
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Contents
1
2
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
Address inputs (A0-Amax) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Data inputs/outputs (DQ0-DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Data inputs/outputs (DQ8-DQ14) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Data input/output or Address input (DQ15A-1) . . . . . . . . . . . . . . . . . . . . 12
Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
VPP/Write Protect (VPP/WP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Reset/Block Temporary Unprotect (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.10 Ready/Busy Output (RB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.11 Byte/Word Organization Select (BYTE) . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.12
2.13
V
CC supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
SS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
V
3
Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Automatic Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Special bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Electronic signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Block protection and Blocks unprotection . . . . . . . . . . . . . . . . . . . . . . . . 16
4
Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1
4.2
4.3
4.4
Read/Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Auto Select command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Unlock Bypass command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Contents
4.5
4.6
4.7
4.8
4.9
Unlock Bypass Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Unlock Bypass Reset command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Chip Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.10 Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.11 Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5
Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.1
5.2
5.3
5.4
5.5
Data Polling bit (DQ7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Toggle bit (DQ6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Error bit (DQ5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Erase Timer bit (DQ3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Alternative Toggle bit (DQ2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6
7
8
9
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Appendix A Block address table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Appendix B Common Flash interface (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Appendix C Block protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
9.1
9.2
Programmer technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
In-system technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
3/57
List of tables
M29W160FT, M29W160FB, M29W320FT, M29W320FB
List of tables
Table 1.
Table 2.
Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Bus operations, BYTE = V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
IL
Table 3.
Bus operations, BYTE = V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
IH
Table 4.
Table 5.
Commands, 16-bit mode, BYTE = V
Commands, 8-bit mode, BYTE = V
IH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
IL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
Table 6.
Table 7.
Table 8.
Table 9.
Program, Erase times and Program, Erase endurance cycles. . . . . . . . . . . . . . . . . . . . . . 24
Status Register bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Operating and AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Device capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Write AC characteristics, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Write AC characteristics, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Reset/Block Temporary Unprotect AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
TSOP48 – 48 lead Plastic Thin Small Outline, 12 × 20 mm, package mechanical data . . 36
TFBGA48 6 x 8 mm - 6 x 8 ball array, 0.80 mm pitch, package mechanical data . . . . . . . 37
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Top boot block addresses, M29W160FT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Bottom boot block addresses, M29W160FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Top boot block addresses, M29W320FT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Bottom boot block addresses, M29W320FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
CFI query identification string . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
CFI query system interface information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Device geometry definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Primary algorithm-specific extended query table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Security code area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Programmer technique bus operations, BYTE = V or V
IH
IL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .51
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
4/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
TSOP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
TFBGA connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
M29W160FT/B block addresses (x 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
M29W320FT/B block addresses (x 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
M29W160FT/B block addresses (x 16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
M29W320FT/B block addresses (x 16) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Data polling flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data toggle flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 10. AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 11. AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 12. Read mode AC waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 13. Write AC waveforms, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 14. Write AC waveforms, Chip Enable controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 15. Reset/Block Temporary Unprotect AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 16. Accelerated Program timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 17. TSOP48 – 48 lead Plastic Thin Small Outline, 12 × 20 mm, package outline . . . . . . . . . . 36
Figure 18. TFBGA48 6 x 8 mm - 6 x 8 ball array, 0.80 mm pitch, package outline . . . . . . . . . . . . . . . 37
Figure 19. Programmer equipment block protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 20. Programmer equipment chip unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 21. In-system equipment block protect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 22. In-system equipment chip unprotect flowchart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
5/57
Description
M29W160FT, M29W160FB, M29W320FT, M29W320FB
1
Description
The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit
(4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and
reprogrammed. These operations can be performed using a single low voltage supply (2.5
to 3.6 V or 2.7 to 3.6 V for access time of 80 ns and 70 ns, respectively). On power-up the
memory defaults to its Read mode where it can be read in the same way as a ROM or
EPROM.
The memory is divided into blocks that can be erased independently so it is possible to
preserve valid data while old data is erased. Each block can be protected independently to
prevent accidental Program or Erase commands from modifying the memory. Program and
Erase commands are written to the command interface of the memory. An on-chip
Program/Erase controller simplifies the process of programming or erasing the memory by
taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions
identified. The command set required to control the memory is consistent with JEDEC
standards.
The blocks in the memory are asymmetrically arranged, see Figures 4, 5, 6 and 7, Block
addresses. The first or last 64 Kbytes have been divided into four additional blocks. The
16 Kbyte Boot Block can be used for small initialization code to start the microprocessor, the
two 8 Kbyte Parameter Blocks can be used for parameter storage and the remaining
32 Kbyte block is a small Main Block where the application may be stored.
Chip Enable, Output Enable and Write Enable signals control the bus operation of the
memory. They allow simple connection to most microprocessors, often without additional
logic.
The memory is offered in TSOP48 (12 x 20 mm) and TFBGA48 (0.8 mm pitch) packages.
The memory is supplied with all the bits erased (set to ’1’).
In order to meet environmental requirements, Numonyx offers these devices in ECOPACK®
packages. These packages have a Lead-free second-level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97.
The maximum ratings related to soldering conditions are also marked on the inner box label.
6/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Figure 1. Logic diagram
Description
(1)
V
V
/WP
PP
CC
15
(2)
A0-Amax
DQ0-DQ14
DQ15A–1
M29W160FT
M29W160FB
M29W320FT
M29W320FB
W
E
G
RB
RP
BYTE
V
SS
AI13246
1. The VPP/WP pin is available in the M29W320FT and M29W320FB only.
2. Amax is equal to A19 in the M29W160FT/B, and to A20 in the M29W320FT/B.
Table 1.
Signal names
Signal name
Function
Direction
A0-Amax(1)
Address inputs
Inputs
I/O
DQ0-DQ7
Data inputs/outputs
Data inputs/outputs
Data input/output or Address input
Chip Enable
DQ8-DQ14
I/O
DQ15A–1
I/O
E
Input
Input
Input
Input
Output
Input
G
Output Enable
W
Write Enable
RP
RB
BYTE
Reset/Block Temporary Unprotect
Ready/Busy output
Byte/word Organization Select
VPP/Write Protect
V
PP/WP(2)
VCC
VSS
NC
Supply voltage
Ground
Not connected internally
1. Amax is equal to A19 in the M29W160FT/B, and to A20 in the M29W320FT/B.
2. The VPP/WP pin is available in the M29W320FT and M29W320FB only.
7/57
Description
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Figure 2.
TSOP connections
A15
A14
A13
A12
A11
A10
A9
1
48
A16
BYTE
V
SS
DQ15A–1
DQ7
DQ14
DQ6
A8
DQ13
DQ5
A19
(1)
A20/NC
DQ12
DQ4
M29W160FT
M29W160FB
M29W320FT
M29W320FB
W
RP
12
13
37
36
V
CC
NC
(2)
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
G
V
/WP/NC
PP
RB
A18
A17
A7
A6
A5
A4
A3
V
SS
E
A2
A1
24
25
A0
AI13247
1. Pin 10 is NC (not connected) in the M29W160FT/B, and it is connected to A20 in the M29W320FT/B.
2. Pin 14 is NC (not connected) in the M29W160FT/B, and it is connected to the VPP/WP pin in the
M29W320FT/B.
8/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Figure 3. TFBGA connections (top view through package)
Description
1
2
3
4
5
6
A9
A13
A
B
A3
A4
A7
A17
A6
RB
W
RP
V
PP/
(1)
A8
A10
A12
A14
WP
C
D
E
F
A2
A1
A0
E
A18
A20(2)
DQ2
NC
A11
A5
A19
DQ5
DQ12
A15
DQ7
DQ14
DQ13
DQ6
DQ0
DQ8
DQ9
DQ1
A16
DQ10
DQ11
DQ3
BYTE
DQ15
A–1
G
H
G
V
CC
V
DQ4
V
SS
SS
AI02985c
1. The above figure gives the TFBGA connections for the M29W320FT/B. On the M29W160FT/B, the
PP/WP pin is NC (not connected).
V
2. The above figure gives the TFBGA connections for the M29W320FT/B. On the M29W160FT/B, A20 is NC
(not connected).
9/57
Description
M29W160FT, M29W160FB, M29W320FT, M29W320FB
M29W160FT/B block addresses (x 8)
Figure 4.
M29W160FT
M29W160FB
Top Boot block addresses (x 8)
Bottom Boot block addresses (x 8)
1FFFFFh
1FFFFFh
16 Kbyte
8 Kbyte
8 Kbyte
32 Kbyte
64 Kbyte
64 Kbyte
64 Kbyte
1FC000h
1F0000h
1EFFFFh
1FBFFFh
1FA000h
1F9FFFh
1E0000h
Total of 31
64 Kbyte blocks
1F8000h
1F7FFFh
1F0000h
1EFFFFh
01FFFFh
64 Kbyte
32 Kbyte
8 Kbyte
8 Kbyte
16 Kbyte
1E0000h
010000h
00FFFFh
008000h
007FFFh
Total of 31
64 Kbyte blocks
006000h
005FFFh
01FFFFh
64 Kbyte
64 Kbyte
010000h
00FFFFh
004000h
003FFFh
000000h
000000h
AI12390b
1. Also see Appendix A, Tables 19 and 20 for a full listing of the block addresses.
Figure 5.
M29W320FT/B block addresses (x 8)
M29W320FT
M29W320FB
Top Boot block addresses (x 8)
Bottom Boot block addresses (x 8)
3FFFFFh
3FFFFFh
16 Kbyte
8 Kbyte
8 Kbyte
32 Kbyte
64 Kbyte
64 Kbyte
3FC000h
3FBFFFh
3F0000h
3EFFFFh
64 Kbyte
3FA000h
3F9FFFh
3E0000h
Total of 63
64 Kbyte blocks
3F8000h
3F7FFFh
3F0000h
3EFFFFh
01FFFFh
64 Kbyte
32 Kbyte
8 Kbyte
8 Kbyte
16 Kbyte
3E0000h
010000h
00FFFFh
008000h
007FFFh
Total of 63
64 Kbyte blocks
006000h
005FFFh
01FFFFh
64 Kbyte
64 Kbyte
010000h
00FFFFh
004000h
003FFFh
000000h
000000h
AI13248b
1. Also see Appendix A, Tables 21 and 22 for a full listing of the block addresses.
10/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Description
Figure 6.
M29W160FT/B block addresses (x 16)
M29W160FT
Top Boot block addresses (x 16)
M29W160FB
Bottom Boot block addresses (x 16)
FFFFFh
FFFFFh
8 Kword
4 Kword
4 Kword
16 Kword
32 Kword
32 Kword
32 Kword
FE000h
FDFFFh
F8000h
F7FFFh
FD000h
FCFFFh
F0000h
Total of 31
32 Kword blocks
FC000h
FBFFFh
F8000h
F7FFFh
0FFFFh
32 Kword
16 Kword
4 Kword
4 Kword
8 Kword
F0000h
08000h
07FFFh
04000h
03FFFh
Total of 31
32 Kword blocks
03000h
02FFFh
0FFFFh
32 Kword
32 Kword
08000h
07FFFh
02000h
01FFFh
00000h
00000h
AI12391b
1. Also see Appendix A, Tables 19 and 20 for a full listing of the block addresses.
Figure 7.
M29W320FT/B block addresses (x 16)
M29W320FT
M29W320FB
Top Boot block addresses (x 16)
Bottom Boot block addresses (x 16)
1FFFFFh
1FFFFFh
8 Kword
4 Kword
4 Kword
16 Kword
32 Kword
32 Kword
1FE000h
1FDFFFh
1F8000h
1F7FFFh
32 Kword
1FD000h
1FCFFFh
1F0000h
Total of 63
32 Kword blocks
1FC000h
1FBFFFh
1F8000h
1F7FFFh
00FFFFh
32 Kword
16 Kword
4 Kword
4 Kword
8 Kword
1F0000h
008000h
007FFFh
004000h
003FFFh
Total of 63
32 Kword blocks
003000h
002FFFh
00FFFFh
32 Kword
32 Kword
008000h
007FFFh
002000h
001FFFh
000000h
000000h
AI13250b
1. Also see Appendix A, Tables 21 and 22 for a full listing of the block addresses.
11/57
Signal descriptions
M29W160FT, M29W160FB, M29W320FT, M29W320FB
2
Signal descriptions
See Figure 1: Logic diagram, and Table 1: Signal names, for a brief overview of the signals
connected to this device.
2.1
Address inputs (A0-Amax)
Amax is equal to A19 in the M29W160FT/B, and to A20 in the M29W320FT/B.
The Address inputs select the cells in the memory array to access during Bus Read
operations. During Bus Write operations they control the commands sent to the command
interface of the Program/Erase controller.
2.2
2.3
Data inputs/outputs (DQ0-DQ7)
The Data inputs/outputs output the data stored at the selected address during a Bus Read
operation. During Bus Write operations they represent the commands sent to the command
interface of the Program/Erase controller.
Data inputs/outputs (DQ8-DQ14)
The Data inputs/outputs output the data stored at the selected address during a Bus Read
operation when BYTE is High, V . When BYTE is Low, V , these pins are not used and are
IH
IL
high impedance. During Bus Write operations the Command Register does not use these
bits. When reading the Status Register these bits should be ignored.
2.4
Data input/output or Address input (DQ15A-1)
When BYTE is High, V , this pin behaves as a Data input/output pin (as DQ8-DQ14). When
IH
BYTE is Low, V , this pin behaves as an address pin; DQ15A–1 Low will select the LSB of
IL
the word on the other addresses, DQ15A–1 High will select the MSB. Throughout the text
consider references to the Data input/output to include this pin when BYTE is High and
references to the Address inputs to include this pin when BYTE is Low except when stated
explicitly otherwise.
2.5
2.6
Chip Enable (E)
The Chip Enable, E, activates the memory, allowing Bus Read and Bus Write operations to
be performed. When Chip Enable is High, V , all other pins are ignored.
IH
Output Enable (G)
The Output Enable, G, controls the Bus Read operation of the memory.
12/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Signal descriptions
2.7
2.8
Write Enable (W)
The Write Enable, W, controls the Bus Write operation of the memory’s command interface.
VPP/Write Protect (VPP/WP)
The V /Write Protect pin is only available in the M29W320FT/B devices. It provides two
PP
functions. The V function allows the memory to use an external high voltage power supply
PP
to reduce the time required for Unlock Bypass Program operations. The Write Protect
function provides a hardware method of protecting the 16 Kbyte Boot Block. The V /Write
PP
Protect pin must not be left floating or unconnected.
When V /Write Protect is Low, V , the memory protects the 16 Kbyte Boot Block; Program
PP
IL
and Erase operations in this block are ignored while V /Write Protect is Low.
PP
When V /Write Protect is High, V , the memory reverts to the previous protection status
PP
IH
of the 16 Kbyte boot block. Program and Erase operations can now modify the data in the 16
Kbyte Boot Block unless the block is protected using Block Protection.
When V /Write Protect is raised to V the memory automatically enters the Unlock
PP
PP
Bypass mode. When V /Write Protect returns to V or V normal operation resumes.
PP
IH
IL
During Unlock Bypass Program operations the memory draws I from the pin to supply the
PP
programming circuits. See the description of the Unlock Bypass command in the command
interface section. The transitions from V to V and from V to V must be slower than
IH
PP
PP
IH
t
, see Figure 16.
VHVPP
Never raise V /Write Protect to V from any mode except Read mode, otherwise the
PP
PP
memory may be left in an indeterminate state.
A 0.1 µF capacitor should be connected between the V /Write Protect pin and the V
PP
SS
ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during Unlock Bypass Program, I .
PP
2.9
Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a Hardware Reset to the
memory or to temporarily unprotect all blocks that have been protected.
A Hardware Reset is achieved by holding Reset/Block Temporary Unprotect Low, V , for at
IL
least t
. After Reset/Block Temporary Unprotect goes High, V , the memory will be
PLPX
IH
ready for Bus Read and Bus Write operations after t
or t
, whichever occurs last.
RHEL
PHEL
See Section 2.10: Ready/Busy Output (RB), Table 15 and Figure 15., Reset/Temporary
Unprotect AC characteristics for more details.
Holding RP at V will temporarily unprotect the protected blocks in the memory. Program
ID
and Erase operations on all blocks will be possible. The transition from V to V must be
IH
ID
slower than t
.
PHPHH
13/57
Signal descriptions
M29W160FT, M29W160FB, M29W320FT, M29W320FB
2.10
Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a Program or Erase operation. During Program or Erase operations Ready/Busy
is Low, V . Ready/Busy is high-impedance during Read mode, Auto Select mode and
OL
Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write operations cannot begin until Ready/Busy
becomes high-impedance. See Table 15 and Figure 15: Reset/Block Temporary Unprotect
AC waveforms.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.11
2.12
Byte/Word Organization Select (BYTE)
The Byte/Word Organization Select pin is used to switch between the 8-bit and 16-bit Bus
modes of the memory. When Byte/Word Organization Select is Low, V , the memory is in 8-
IL
bit mode, when it is High, V , the memory is in 16-bit mode.
IH
VCC supply voltage
The V supply voltage supplies the power for all operations (Read, Program, Erase etc.).
CC
The command interface is disabled when the V supply voltage is less than the Lockout
CC
voltage, V
. This prevents Bus Write operations from accidentally damaging the data
LKO
during power up, power down and power surges. If the Program/Erase controller is
programming or erasing during this time then the operation aborts and the memory contents
being altered will be invalid.
A 0.1 µF capacitor should be connected between the V supply voltage pin and the V
CC
SS
ground pin to decouple the current surges from the power supply. The PCB track widths
must be sufficient to carry the currents required during program and erase operations, I
.
CC3
2.13
VSS ground
The V ground is the reference for all voltage measurements. The two V pins of the
SS
SS
device must be connected to the system ground.
14/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Bus operations
3
Bus operations
There are five standard bus operations that control the device. These are Bus Read, Bus
Write, Output Disable, Standby and Automatic Standby. See Table 2. and Table 3., Bus
operations, for a summary. Typically glitches of less than 5 ns on Chip Enable or Write
Enable are ignored by the memory and do not affect bus operations.
3.1
Bus Read
Bus Read operations read from the memory cells, or specific registers in the command
interface. A valid Bus Read operation involves setting the desired address on the Address
inputs, applying a Low signal, V , to Chip Enable and Output Enable and keeping Write
IL
Enable High, V . The Data inputs/outputs will output the value, see Figure 12: Read mode
IH
AC waveforms, and Table 12: Read AC characteristics, for details of when the output
becomes valid.
3.2
Bus Write
Bus Write operations write to the command interface. A valid Bus Write operation begins by
setting the desired address on the Address inputs. The Address inputs are latched by the
command interface on the falling edge of Chip Enable or Write Enable, whichever occurs
last. The Data inputs/outputs are latched by the command interface on the rising edge of
Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, V ,
IH
during the whole Bus Write operation. See Figure 13. and Figure 14., Write AC waveforms,
and Tables 13 and 14, Write AC characteristics, for details of the timing requirements.
3.3
3.4
Output Disable
The Data inputs/outputs are in the high impedance state when Output Enable is High, V .
IH
Standby
When Chip Enable is High, V , the memory enters Standby mode and the Data
IH
inputs/outputs pins are placed in the high-impedance state. To reduce the supply current to
the Standby supply current, I
, Chip Enable should be held within V
0.2 V. For the
CC2
CC
Standby current level see Table 11: DC characteristics.
During program or erase operations the memory will continue to use the Program/Erase
supply current, I , for Program or Erase operations until the operation completes.
CC3
3.5
Automatic Standby
If CMOS levels (V
0.2 V) are used to drive the bus and the bus is inactive for 150 ns or
CC
more the memory enters Automatic Standby where the internal supply current is reduced to
the Standby supply current, I
operation is in progress.
. The Data inputs/outputs will still output data if a Bus Read
CC2
15/57
Bus operations
M29W160FT, M29W160FB, M29W320FT, M29W320FB
3.6
Special bus operations
Additional bus operations can be performed to read the Electronic Signature and also to
apply and remove Block Protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require V to be
ID
applied to some pins.
3.7
3.8
Electronic signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in Table 2.
and Table 3, Bus operations.
Block protection and Blocks unprotection
Each block can be separately protected against accidental Program or Erase. Protected
blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on
programming equipment and the other for in-system use. Block Protect and Blocks
Unprotect operations are described in Appendix C.
(1)
Table 2.
Bus operations, BYTE = V
IL
Data inputs/outputs
Address inputs
DQ15A–1, A0-Amax
Operation
E
G
W
DQ14-DQ8
DQ7-DQ0
Bus Read
Bus Write
Output Disable
Standby
VIL
VIL VIH Cell address
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Data output
Data input
Hi-Z
VIL VIH VIL Command address
X
VIH VIH
X
X
VIH
X
X
Hi-Z
Read manufacturer
code
A0=VIL, A1=VIL, A9=VID,
others VIL or VIH
VIL
VIL VIH
Hi-Z
20h
C4h (M29W160FT)
CAh (M29W320FT)
49h (M29W160FB)
CBh (M29W320FB)
A0=VIH, A1=VIL,
VIL VIH A9=VID, others VIL or
VIH
Read device code
VIL
Hi-Z
1. X = VIL or VIH
.
16/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Bus operations
(1)
Table 3.
Bus operations, BYTE = V
IH
Address inputs
A0-Amax
Data inputs/outputs
DQ15A–1, DQ14-DQ0
Operation
E
G
W
Bus Read
Bus Write
Output Disable
Standby
VIL
VIL
X
VIL
VIH
VIH
X
VIH Cell address
Data output
Data input
Hi-Z
VIL Command address
VIH
X
X
X
VIH
Hi-Z
Read manufacturer
code
A0=VIL, A1=VIL, A9=VID,
others VIL or VIH
VIL
VIL
VIH
0020h
22C4h (M29W160FT)
22CAh (M29W320FT)
2249h (M29W160FB)
22CBh (M29W320FB)
A0=VIH, A1=VIL,
VIH A9=VID, others VIL or
VIH
Read device code
VIL
VIL
1. X = VIL or VIH
.
17/57
Command interface
M29W160FT, M29W160FB, M29W320FT, M29W320FB
4
Command interface
All Bus Write operations to the memory are interpreted by the command interface.
Commands consist of one or more sequential Bus Write operations. Failure to observe a
valid sequence of Bus Write operations will result in the memory returning to Read mode.
The long command sequences are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-
bit or 8-bit mode. See either Table 4, or Table 5, depending on the configuration that is being
used, for a summary of the commands.
4.1
4.2
Read/Reset command
The Read/Reset command returns the memory to its Read mode where it behaves like a
ROM or EPROM, unless otherwise stated. It also resets the errors in the Status Register.
Either one or three Bus Write operations can be used to issue the Read/Reset command.
The Read/Reset command can be issued, between Bus Write cycles before the start of a
program or erase operation, to return the device to Read mode. Once the program or erase
operation has started the Read/Reset command is no longer accepted. The Read/Reset
command will not abort an Erase operation when issued while in Erase Suspend.
Auto Select command
The Auto Select command is used to read the manufacturer code, the device code and the
Block Protection status. Three consecutive Bus Write operations are required to issue the
Auto Select command. Once the Auto Select command is issued the memory remains in
Auto Select mode until a Read/Reset command is issued. Read CFI Query and Read/Reset
commands are accepted in Auto Select mode, all other commands are ignored.
From the Auto Select mode the manufacturer code can be read using a Bus Read operation
with A0 = V and A1 = V . The other address bits may be set to either V or V . The
IL
IL
IL
IH
manufacturer code for Numonyx is 0020h.
The device code can be read using a Bus Read operation with A0 = V and A1 = V . The
IH
IL
other address bits may be set to either V or V .
IL
IH
The Block Protection status of each block can be read using a Bus Read operation with
A0 = V , A1 = V , and A12-Amax specifying the address of the block. The other address
IL
IH
bits may be set to either V or V . If the addressed block is protected then 01h is output on
IL
IH
Data inputs/outputs DQ0-DQ7, otherwise 00h is output.
18/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Command interface
4.3
Program command
The Program command can be used to program a value to one address in the memory array
at a time. The command requires four Bus Write operations, the final write operation latches
the address and data, and starts the Program/Erase controller.
If the address falls in a protected block then the Program command is ignored, the data
remains unchanged. The Status Register is never read and no error condition is given.
During the program operation the memory will ignore all commands. It is not possible to
issue any command to abort or pause the operation. Typical program times are given in
Table 6. Bus Read operations during the program operation will output the Status Register
on the Data inputs/outputs. See the section on the Status Register for more details.
After the program operation has completed the memory returns to the Read mode, unless
an error has occurred. When an error occurs the memory continues to output the Status
Register. A Read/Reset command must be issued to reset the error condition and return to
Read mode.
Note that the Program command cannot change a bit set at ’0’ back to ’1’. One of the Erase
commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’.
4.4
4.5
Unlock Bypass command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory. When the access time to the device is long (as with
some EPROM programmers) considerable time saving can be made by using these
commands. Three Bus Write operations are required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
Unlock Bypass Program command
The Unlock Bypass Program command can be used to program one address in memory at
a time. The command requires two Bus Write operations, the final write operation latches
the address and data, and starts the Program/Erase controller.
The Program operation using the Unlock Bypass Program command behaves identically to
the Program operation using the Program command. A protected block cannot be
programmed; the operation cannot be aborted and the Status Register is read. Errors must
be reset using the Read/Reset command, which leaves the device in Unlock Bypass mode.
See the Program command for details on the behavior.
4.6
Unlock Bypass Reset command
The Unlock Bypass Reset command can be used to return to Read/Reset mode from
Unlock Bypass mode. Two Bus Write operations are required to issue the Unlock Bypass
Reset command. Read/Reset command does not exit from Unlock Bypass mode.
19/57
Command interface
M29W160FT, M29W160FB, M29W320FT, M29W320FB
4.7
Chip Erase command
The Chip Erase command can be used to erase the entire chip. Six Bus Write operations
are required to issue the Chip Erase command and start the Program/Erase controller.
If any blocks are protected then these are ignored and all the other blocks are erased. If all
of the blocks are protected the Chip Erase operation appears to start but will terminate
within about 100 µs, leaving the data unchanged. No error condition is given when protected
blocks are ignored.
During the erase operation the memory will ignore all commands. It is not possible to issue
any command to abort the operation. Typical chip erase times are given in Table 6. All Bus
Read operations during the Chip Erase operation will output the Status Register on the Data
inputs/outputs. See the section on the Status Register for more details.
After the Chip Erase operation has completed the memory will return to the Read mode,
unless an error has occurred. When an error occurs the memory will continue to output the
Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read mode.
The Chip Erase command sets all of the bits in unprotected blocks of the memory to ’1’. All
previous data is lost.
4.8
Block Erase command
The Block Erase command can be used to erase a list of one or more blocks. Six Bus Write
operations are required to select the first block in the list. Each additional block in the list can
be selected by repeating the sixth Bus Write operation using the address of the additional
block. The Block Erase operation starts the Program/Erase controller about 50 µs after the
last Bus Write operation. Once the Program/Erase controller starts it is not possible to select
any more blocks. Each additional block must therefore be selected within 50 µs of the last
block. The 50 µs timer restarts when an additional block is selected. The Status Register
can be read after the sixth Bus Write operation. See the Status Register section for details
on how to identify if the Program/Erase controller has started the Block Erase operation.
If any selected blocks are protected then these are ignored and all the other selected blocks
are erased. If all of the selected blocks are protected the Block Erase operation appears to
start but will terminate within about 100 µs, leaving the data unchanged. No error condition
is given when protected blocks are ignored.
During the Block Erase operation the memory will ignore all commands except the Erase
Suspend command. Typical block erase times are given in Table 6. All Bus Read operations
during the Block Erase operation will output the Status Register on the Data inputs/outputs.
See the section on the Status Register for more details.
After the Block Erase operation has completed the memory will return to the Read mode,
unless an error has occurred. When an error occurs the memory will continue to output the
Status Register. A Read/Reset command must be issued to reset the error condition and
return to Read mode.
The Block Erase command sets all of the bits in the unprotected selected blocks to ’1’. All
previous data in the selected blocks is lost.
20/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Command interface
4.9
Erase Suspend command
The Erase Suspend command may be used to temporarily suspend a Block Erase operation
and return the memory to Read mode. The command requires one Bus Write operation.
The Program/Erase controller will suspend within the Erase Suspend Latency time (refer to
Table 6 for value) of the Erase Suspend command being issued. Once the Program/Erase
controller has stopped the memory will be set to Read mode and the Erase will be
suspended. If the Erase Suspend command is issued during the period when the memory is
waiting for an additional block (before the Program/Erase controller starts) then the Erase is
suspended immediately and will start immediately when the Erase Resume command is
issued. It is not possible to select any further blocks to erase after the Erase Resume.
During Erase Suspend it is possible to Read and Program cells in blocks that are not being
erased; both Read and Program operations behave as normal on these blocks. If any
attempt is made to program in a protected block or in the suspended block then the Program
command is ignored and the data remains unchanged. The Status Register is not read and
no error condition is given. Reading from blocks that are being erased will output the Status
Register.
It is also possible to issue the Auto Select, Read CFI Query and Unlock Bypass commands
during an Erase Suspend. The Read/Reset command must be issued to return the device to
Read Array mode before the Resume command will be accepted.
4.10
4.11
Erase Resume command
The Erase Resume command must be used to restart the Program/Erase controller from
Erase Suspend. An erase can be suspended and resumed more than once.
Read CFI Query command
The Read CFI Query command is used to read data from the Common Flash interface (CFI)
memory area. This command is valid when the device is in the Read Array mode, or when
the device is in Auto Select mode.
One Bus Write cycle is required to issue the Read CFI Query command. Once the
command is issued subsequent Bus Read operations read from the Common Flash
interface memory area.
The Read/Reset command must be issued to return the device to the previous mode (the
Read Array mode or Auto Select mode). A second Read/Reset command would be needed
if the device is to be put in the Read Array mode from Auto Select mode.
See Appendix B, Tables 23, 24, 25, 26, 27 and 28 for details on the information contained in
the common flash interface (CFI) memory area.
21/57
Command interface
Table 4.
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Commands, 16-bit mode, BYTE = V
IH
Bus Write operations(1) (2) (3)
Command
1st
2nd
3rd
4th
5th
6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
F0
1
3
3
4
X
Read/Reset(4)
555 AA 2AA 55
555 AA 2AA 55
555 AA 2AA 55
X
F0
90
A0
Auto Select(5)
Program(6)
555
555
PA
PD
Unlock
3
2
555 AA 2AA 55
555
20
Bypass(7)
Unlock Bypass
Program(6)
X
X
A0
90
PA
X
PD
00
Unlock Bypass
Reset(8)
2
6
Chip Erase(6)
555 AA 2AA 55
555
555
80
80
555 AA 2AA 55
555 AA 2AA 55
555
BA
10
30
Block Erase(6) 6+ 555 AA 2AA 55
Erase
1
1
1
X
X
B0
30
98
Suspend(9)
Erase
Resume(10)
Read CFI
Query(11)
55
1. X don’t care, PA Program Address, PD Program Data, BA any address in the block.
2. All values in the table are in hexadecimal.
3. The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A19, DQ8-
DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH
4. After a Read/Reset command, read the memory as normal until another command is issued.
5. After an Auto Select command, read manufacturer ID, device ID or Block Protection status.
.
6. After this command read the Status Register until the Program/Erase controller completes and the memory
returns to Read mode. Add additional blocks during Block Erase command with additional Bus Write
operations until Timeout bit is set.
7. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
8. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
9. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and
Program commands on non-erasing blocks as normal.
10. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until
the Program/Erase controller completes and the memory returns to Read mode.
11. Command is valid when device is ready to read array data or when device is in Auto Select mode.
22/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Command interface
Table 5.
Commands, 8-bit mode, BYTE = V
IL
Bus Write operations(1) (2) (3)
Command
1st
2nd
3rd 4th
5th
6th
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
F0
AAA AA 555 55
1
3
3
4
3
X
Read/Reset(4)
X
F0
Auto Select(5)
Program(6)
AAA AA 555 55 AAA 90
AAA AA 555 55 AAA A0
AAA AA 555 55 AAA 20
PA
PD
Unlock Bypass(7)
Unlock Bypass
Program(6)
2
X
X
A0
90
PA
X
PD
00
Unlock Bypass
Reset(8)
2
6
Chip Erase(6)
AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10
BA 30
Block Erase(6)
6+ AAA AA 555 55 AAA 80 AAA AA 555 55
Erase Suspend(9)
Erase Resume(10)
1
1
X
X
B0
30
Read CFI
Query(11)
1
AA
98
1. X don’t care, PA Program Address, PD Program Data, BA any address in the block.
2. All values in the table are in hexadecimal.
3. The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A19, DQ8-
DQ14 and DQ15 are don’t care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH
4. After a Read/Reset command, read the memory as normal until another command is issued.
5. After an Auto Select command, read manufacturer ID, device ID or Block Protection status.
.
6. After this command read the Status Register until the Program/Erase controller completes and the memory
returns to Read mode. Add additional blocks during Block Erase command with additional Bus Write
operations until Timeout bit is set.
7. After the Unlock Bypass command issue Unlock Bypass Program or Unlock Bypass Reset commands.
8. After the Unlock Bypass Reset command read the memory as normal until another command is issued.
9. After the Erase Suspend command read non-erasing memory blocks as normal, issue Auto Select and
Program commands on non-erasing blocks as normal.
10. After the Erase Resume command the suspended Erase operation resumes, read the Status Register until
the Program/Erase controller completes and the memory returns to Read mode.
11. Command is valid when device is ready to read array data or when device is in Auto Select mode.
23/57
Command interface
Table 6.
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Program, Erase times and Program, Erase endurance cycles
Parameter
Min
Typ(1) (2)
Max(2)
Unit
Chip Erase
29
0.8
20
13
26
13
120(3)
6(4)
s
s
Block Erase (64 Kbytes)
Erase Suspend Latency time
Program (byte or word)
25(4)
200(3)
120(3)
60(3)
µs
µs
Chip Program (byte by byte)
Chip Program (word by word)
Program/Erase cycles (per block)
Data retention
s
s
100,000
20
cycles
years
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and VCC after 100,000
program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and VCC
.
24/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Status Register
5
Status Register
Bus Read operations from any address always read the Status Register during Program and
Erase operations. It is also read during Erase Suspend when an address within a block
being erased is accessed.
The bits in the Status Register are summarized in Table 7: Status Register bits.
5.1
Data Polling bit (DQ7)
The Data Polling bit can be used to identify whether the Program/Erase controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Data
Polling bit is output on DQ7 when the Status Register is read.
During Program operations the Data Polling bit outputs the complement of the bit being
programmed to DQ7. After successful completion of the Program operation the memory
returns to Read mode and Bus Read operations from the address just programmed output
DQ7, not its complement.
During Erase operations the Data Polling bit outputs ’0’, the complement of the erased state
of DQ7. After successful completion of the Erase operation the memory returns to Read
Mode.
In Erase Suspend mode the Data Polling bit will output a ’1’ during a Bus Read operation
within a block being erased. The Data Polling bit will change from a ’0’ to a ’1’ when the
Program/Erase controller has suspended the Erase operation.
Figure 8: Data polling flowchart, gives an example of how to use the Data Polling bit. A Valid
address is the address being programmed or an address within the block being erased.
5.2
Toggle bit (DQ6)
The Toggle bit can be used to identify whether the Program/Erase controller has
successfully completed its operation or if it has responded to an Erase Suspend. The Toggle
bit is output on DQ6 when the Status Register is read.
During Program and Erase operations the Toggle bit changes from ’0’ to ’1’ to ’0’, etc., with
successive Bus Read operations at any address. After successful completion of the
operation the memory returns to Read mode.
During Erase Suspend mode the Toggle bit will output when addressing a cell within a block
being erased. The Toggle bit will stop toggling when the Program/Erase controller has
suspended the Erase operation.
If any attempt is made to erase a protected block, the operation is aborted, no error is
signalled and DQ6 toggles for approximately 100µs. If any attempt is made to program a
protected block or a suspended block, the operation is aborted, no error is signalled and
DQ6 toggles for approximately 1µs.
Figure 9: Data toggle flowchart, gives an example of how to use the Data Toggle bit.
25/57
Status Register
M29W160FT, M29W160FB, M29W320FT, M29W320FB
5.3
Error bit (DQ5)
The Error bit can be used to identify errors detected by the Program/Erase controller. The
Error bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the
correct data to the memory. If the Error bit is set a Read/Reset command must be issued
before other commands are issued. The Error bit is output on DQ5 when the Status Register
is read.
Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting to
do so will set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’.
One of the Erase commands must be used to set all the bits in a block or in the whole
memory from ’0’ to ’1’
5.4
5.5
Erase Timer bit (DQ3)
The Erase Timer bit can be used to identify the start of Program/Erase controller operation
during a Block Erase command. Once the Program/Erase controller starts erasing the Erase
Timer bit is set to ’1’. Before the Program/Erase controller starts the Erase Timer bit is set to
’0’ and additional blocks to be erased may be written to the command interface. The Erase
Timer bit is output on DQ3 when the Status Register is read.
Alternative Toggle bit (DQ2)
The Alternative Toggle bit can be used to monitor the Program/Erase controller during Erase
operations. The Alternative Toggle bit is output on DQ2 when the Status Register is read.
During Chip Erase and Block Erase operations the Toggle bit changes from ’0’ to ’1’ to ’0’,
etc., with successive Bus Read operations from addresses within the blocks being erased. A
protected block is treated the same as a block not being erased. Once the operation
completes the memory returns to Read mode.
During Erase Suspend the Alternative Toggle bit changes from ’0’ to ’1’ to ’0’, etc. with
successive Bus Read operations from addresses within the blocks being erased. Bus Read
operations to addresses within blocks not being erased will output the memory cell data as if
in Read mode.
After an Erase operation that causes the Error bit to be set the Alternative Toggle bit can be
used to identify which block or blocks have caused the error. The Alternative Toggle bit
changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read Operations from addresses
within blocks that have not erased correctly. The Alternative Toggle bit does not change if
the addressed block has erased correctly.
26/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Status Register
(1)
Table 7.
Operation
Program
Status Register bits
Address
DQ7
DQ6
DQ5
DQ3
DQ2
RB
Any address
DQ7
Toggle
0
–
–
0
Program During
Erase Suspend
Any address
DQ7
Toggle
0
–
–
0
Program Error
Chip Erase
Any address
DQ7
Toggle
Toggle
1
0
0
0
0
0
0
–
1
0
0
1
1
–
–
0
0
0
0
0
0
1
1
0
0
Any address
0
0
0
0
0
1
Toggle
Erasing block
Toggle
Toggle
Block Erase
before timeout
Non-erasing block
Erasing block
Toggle
No Toggle
Toggle
Toggle
Block Erase
Erase Suspend
Erase Error
Non-erasing block
Erasing block
Toggle
No Toggle
Toggle
No Toggle
Non-erasing block
Good block address
Faulty block address
Data read as normal
0
0
Toggle
Toggle
1
1
1
1
No Toggle
Toggle
1. Unspecified data bits should be ignored.
Figure 8.
Data polling flowchart
START
READ DQ5 & DQ7
at VALID ADDRESS
DQ7
=
YES
DATA
NO
NO
DQ5
= 1
YES
READ DQ7
at VALID ADDRESS
DQ7
=
YES
DATA
NO
FAIL
PASS
AI03598
27/57
Status Register
Figure 9.
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Data toggle flowchart
START
READ DQ6
READ
DQ5 & DQ6
DQ6
NO
=
TOGGLE
YES
NO
DQ5
= 1
YES
READ DQ6
TWICE
DQ6
=
NO
TOGGLE
YES
FAIL
PASS
AI01370C
28/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Maximum rating
6
Maximum rating
Stressing the device above the rating listed in Table 8: Absolute maximum ratings may
cause permanent damage to the device. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability. These are stress ratings only and
operation of the device at these or any other conditions above those indicated in the
operating sections of this specification is not implied. Refer also to the Numonyx SURE
Program and other relevant quality documents.
Table 8.
Symbol
Absolute maximum ratings
Parameter
Min
Max
Unit
TA
TBIAS
TSTG
VIO
Ambient temperature grade 3
Temperature under bias
Storage temperature
–40
–50
–65
–0.6
–0.6
–0.6
125
125
°C
°C
°C
V
150
Input or output voltage (1)(2)
VCC+0.6
4
VCC
VID
Supply voltage
V
Identification voltage
13.5
V
1. Minimum voltage may undershoot to –2 V during transition and for less than 20 ns during transitions.
2. Maximum voltage may overshoot to VCC +2 V during transition and for less than 20 ns during transitions.
29/57
DC and AC parameters
M29W160FT, M29W160FB, M29W320FT, M29W320FB
7
DC and AC parameters
This section summarizes the operating measurement conditions, and the DC and AC
characteristics of the device. The parameters in the DC and AC characteristics tables that
follow, are derived from tests performed under the measurement conditions summarized in
Table 9: Operating and AC measurement conditions. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Table 9.
Operating and AC measurement conditions
M29W160FT/B, M29W320FT/B
Parameter
70
80
Unit
Min
Max
Min
Max
V
CC supply voltage
2.7
3.6
2.5
3.6
V
°C
pF
ns
V
Ambient operating temperature (grade 3)
Load capacitance (CL)
–40
125
–40
125
30
30
Input rise and fall times
10
10
Input Pulse voltages
0 to VCC
VCC/2
0 to VCC
VCC/2
Input and output timing ref. voltages
V
Figure 10. AC measurement I/O waveform
V
CC
V
/2
CC
0 V
AI04498
Figure 11. AC measurement load circuit
V
V
CC
CC
25kΩ
DEVICE
UNDER
TEST
25kΩ
0.1µF
C
L
AI04499
C
includes JIG capacitance
L
30/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
DC and AC parameters
(1)
Table 10. Device capacitance
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input capacitance
VIN = 0 V
6
pF
pF
COUT
Output capacitance
VOUT = 0 V
12
1. Sampled only, not 100% tested.
Table 11. DC characteristics
Symbol
Parameter
Test condition
Min
Typ
Max
Unit
ILI
Input Leakage current
Output Leakage current
0 V ≤VIN ≤VCC
1
1
µA
µA
ILO
0 V ≤VOUT ≤VCC
E = VIL, G = VIH,
f = 6 MHz
ICC1
Supply current (Read)
4.5
35
10
100
20
mA
µA
E = VCC 0.2 V,
RP = VCC 0.2 V
ICC2
Supply current (Standby)
Supply current
(Program/Erase)
Program/Erase
controller active
(1)
ICC3
mA
VIL
VIH
VOL
VOH
VID
IID
Input Low voltage
Input High voltage
Output Low voltage
Output High voltage
Identification voltage
Identification current
–0.5
0.8
VCC+0.3
0.45
V
V
0.7VCC
IOL = 1.8 mA
V
IOH = –100 µA
VCC–0.4
11.5
V
12.5
100
V
A9 = VID
µA
Program/Erase Lockout
supply voltage
VLKO
1.8
2.3
V
1. Sampled only, not 100% tested.
31/57
DC and AC parameters
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Figure 12. Read mode AC waveforms
tAVAV
VALID
A0-Amax/
A–1
tAVQV
tAXQX
tEHQX
E
tELQV
tELQX
tEHQZ
G
tGLQX
tGLQV
tGHQX
tGHQZ
VALID
DQ0-DQ7/
DQ8-DQ15
tBHQV
BYTE
tELBL/tELBH
tBLQZ
AI13251
Table 12. Read AC characteristics
M29Wxx0FT/B
Symbol
Alt
Parameter
Test condition
Unit
70
80
E = VIL,
G = VIL
tAVAV
tAVQV
tRC Address Valid to Next Address Valid
tACC Address Valid to Output Valid
Min
70
80
ns
ns
E = VIL,
G = VIL
Max
70
80
(1)
tELQX
tLZ
Chip Enable Low to Output Transition
G = VIL
G = VIL
Min
0
0
ns
ns
tELQV
tCE Chip Enable Low to Output Valid
Max
70
80
Output Enable Low to Output
Transition
(1)
tGLQX
tOLZ
E = VIL
Min
0
0
ns
tGLQV
tOE Output Enable Low to Output Valid
tHZ Chip Enable High to Output Hi-Z
tDF Output Enable High to Output Hi-Z
E = VIL
G = VIL
E = VIL
Max
Max
Max
30
25
25
35
25
25
ns
ns
ns
(1)
tEHQZ
(1)
tGHQZ
tEHQX
tGHQX
Chip Enable, Output Enable or
tOH Address Transition to Output
Transition
Min
0
5
0
5
ns
ns
tAXQX
tELBL
tELBH
tBLQZ
tBHQV
tELFL
Chip Enable to BYTE Low or High
tELFH
Max
tFLQZ BYTE Low to Output Hi-Z
tFHQV BYTE High to Output Valid
Max
Max
25
30
25
30
ns
ns
1. Sampled only, not 100% tested.
32/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
DC and AC parameters
Figure 13. Write AC waveforms, Write Enable controlled
tAVAV
A0-Amax/
VALID
A–1
tWLAX
tAVWL
tWHEH
tWHGL
E
tELWL
G
W
tGHWL
tWLWH
tWHWL
tWHDX
tDVWH
VALID
DQ0-DQ7/
DQ8-DQ15
V
CC
tVCHEL
RB
tWHRL
AI13252
Table 13. Write AC characteristics, Write Enable controlled
M29Wxx0FT/B
Unit
Symbol
Alt
Parameter
70
80
tAVAV
tELWL
tWC
tCS
tWP
tDS
tDH
tCH
Address Valid to Next Address Valid
Chip Enable Low to Write Enable Low
Write Enable Low to Write Enable High
Input Valid to Write Enable High
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Max
Min
70
0
80
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
tWLWH
tDVWH
tWHDX
tWHEH
tWHWL
tAVWL
tWLAX
tGHWL
tWHGL
45
45
0
45
45
0
Write Enable High to Input Transition
Write Enable High to Chip Enable High
0
0
tWPH Write Enable High to Write Enable Low
30
0
30
0
tAS
tAH
Address Valid to Write Enable Low
Write Enable Low to Address Transition
Output Enable High to Write Enable Low
45
0
45
0
tOEH Write Enable High to Output Enable Low
tBUSY Program/Erase Valid to RB Low
tVCS VCC High to Chip Enable Low
0
0
(1)
tWHRL
30
50
30
50
tVCHEL
1. Sampled only, not 100% tested.
33/57
DC and AC parameters
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Figure 14. Write AC waveforms, Chip Enable controlled
tAVAV
A0-Amax/
A–1
VALID
tELAX
tAVEL
tEHWH
W
G
E
tWLEL
tEHGL
tGHEL
tELEH
tEHEL
tDVEH
VALID
tEHDX
DQ0-DQ7/
DQ8-DQ15
V
CC
tVCHWL
RB
tEHRL
AI13253
Table 14. Write AC characteristics, Chip Enable controlled
M29Wxx0FT/B
Symbol
Alt
Parameter
Unit
70
80
tAVAV
tWLEL
tELEH
tDVEH
tEHDX
tEHWH
tEHEL
tAVEL
tELAX
tGHEL
tEHGL
tWC
tWS
tCP
tDS
tDH
tWH
Address Valid to Next Address Valid
Write Enable Low to Chip Enable Low
Chip Enable Low to Chip Enable High
Input Valid to Chip Enable High
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Max
Min
70
0
80
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
45
45
0
45
45
0
Chip Enable High to Input Transition
Chip Enable High to Write Enable High
0
0
tCPH Chip Enable High to Chip Enable Low
30
0
30
0
tAS
tAH
Address Valid to Chip Enable Low
Chip Enable Low to Address Transition
Output Enable High Chip Enable Low
45
0
45
0
tOEH Chip Enable High to Output Enable Low
tBUSY Program/Erase Valid to RB Low
tVCS VCC High to Write Enable Low
0
0
(1)
tEHRL
30
50
30
50
tVCHWL
1. Sampled only, not 100% tested.
34/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
DC and AC parameters
Figure 15. Reset/Block Temporary Unprotect AC waveforms
W, E, G
tPHWL, tPHEL, tPHGL
RB
tRHWL, tRHEL, tRHGL
tPLPX
RP
tPHPHH
tPLYH
AI02931B
Table 15. Reset/Block Temporary Unprotect AC characteristics
M29Wxx0FT/B
Symbol
Alt
Parameter
Unit
ns
70
80
(1)
tPHWL
RP High to Write Enable Low, Chip
Enable Low, Output Enable Low
tPHEL
tRH
Min
Min
50
50
(1)
tPHGL
(1)
tRHWL
RB High to Write Enable Low, Chip
Enable Low, Output Enable Low
(1)
tRHEL
tRB
0
0
ns
(1)
tRHGL
tPLPX
tRP
RP Pulse Width
Min
Max
Min
Min
500
10
500
10
ns
µs
ns
ns
(1)
tPLYH
tREADY RP Low to Read mode
tVIDR RP Rise time to VID
VPP Rise and Fall time
(1)
tPHPHH
500
250
500
250
(1)
tVHVPP
1. Sampled only, not 100% tested.
Figure 16. Accelerated Program timing waveforms
V
PP
V
/WP
V
PP
or V
IH
IL
tVHVPP
tVHVPP
AI90202
35/57
Package mechanical
M29W160FT, M29W160FB, M29W320FT, M29W320FB
8
Package mechanical
Figure 17. TSOP48 – 48 lead Plastic Thin Small Outline, 12 × 20 mm, package outline
1
48
e
D1
B
L1
24
25
A2
A
E1
E
A1
α
L
DIE
C
CP
TSOP-G
1. Drawing is not to scale.
Table 16. TSOP48 – 48 lead Plastic Thin Small Outline, 12 × 20 mm, package
mechanical data
millimeters
inches
Symbol
Typ
Min
Max
Typ
Min
Max
A
A1
A2
B
1.200
0.150
1.050
0.270
0.210
0.100
12.100
20.200
18.500
–
0.0472
0.0059
0.0413
0.0106
0.0083
0.0039
0.4764
0.7953
0.7283
–
0.100
1.000
0.220
0.050
0.950
0.170
0.100
0.0039
0.0394
0.0087
0.0020
0.0374
0.0067
0.0039
C
CP
D1
E
12.000
20.000
18.400
0.500
0.600
0.800
3°
11.900
19.800
18.300
–
0.4724
0.7874
0.7244
0.0197
0.0236
0.0315
3°
0.4685
0.7795
0.7205
–
E1
e
L
0.500
0.700
0.0197
0.0276
L1
α
0°
5°
0°
5°
36/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Package mechanical
Figure 18. TFBGA48 6 x 8 mm - 6 x 8 ball array, 0.80 mm pitch, package outline
Table 17. TFBGA48 6 x 8 mm - 6 x 8 ball array, 0.80 mm pitch, package mechanical
data
millimeters
Min
inches
Min
Symbol
Typ
Max
Typ
Max
A
A1
A2
b
1.200
0.0472
0.260
0.0102
0.900
0.0354
0.350
5.900
–
0.450
0.0138
0.2323
–
0.0177
D
6.000
4.000
6.100
0.2362
0.1575
0.2402
D1
ddd
E
–
–
0.100
0.0039
8.000
5.600
0.800
1.000
1.200
0.400
0.400
7.900
8.100
0.3150
0.2205
0.0315
0.0394
0.0472
0.0157
0.0157
0.3110
0.3189
E1
e
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
FD
FE
SD
SE
37/57
Part numbering
M29W160FT, M29W160FB, M29W320FT, M29W320FB
9
Part numbering
Table 18. Ordering information scheme
Example:
M29W160FB
70
N
3S E
Device type
M29
Operating voltage
W = VCC = 2.7 to 3.6 V (70 ns), 2.5 to 3.6 V (80 ns)
Device function
160F = 16 Mbit (x 8/x 16), Boot block, 0.11 µm
320F = 32 Mbit (x 8/x 16), Boot block, 0.11 µm
Array matrix
T = Top Boot
B = Bottom Boot
Speed
70 = 70 ns
80 = 80 ns
Package
N = TSOP48, 12 × 20 mm
ZA = TFBGA48, 6 x 8 mm, 0.80 mm pitch
Device grade
3 = Automotive grade certified(1), –40 to 125 °C
S = Extended voltage range(2), VCC(min) = 2.5 V
Option
E = ECOPACK® Package, Standard Packing
F = ECOPACK® Package, Tape & Reel Packing
1. Qualified & characterized according to AEC Q100 & Q003 or equivalent, advanced screening according to
AEC Q001 & Q002 or equivalent.
2. This feature could not be available.
Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc.) or for further information on any aspect
of this device, please contact the Numonyx Sales Office nearest to you.
38/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Block address table
Appendix A
Block address table
Table 19. Top boot block addresses, M29W160FT
#
Size (Kbytes)
Address range (x 8)
Address range (x 16)
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
16
8
1FC000h-1FFFFFh
1FA000h-1FBFFFh
1F8000h-1F9FFFh
1F0000h-1F7FFFh
1E0000h-1EFFFFh
1D0000h-1DFFFFh
1C0000h-1CFFFFh
1B0000h-1BFFFFh
1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
170000h-17FFFFh
160000h-16FFFFh
150000h-15FFFFh
140000h-14FFFFh
130000h-13FFFFh
120000h-12FFFFh
110000h-11FFFFh
100000h-10FFFFh
0F0000h-0FFFFFh
0E0000h-0EFFFFh
0D0000h-0DFFFFh
0C0000h-0CFFFFh
0B0000h-0BFFFFh
0A0000h-0AFFFFh
090000h-09FFFFh
080000h-08FFFFh
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
000000h-00FFFFh
FE000h-FFFFFh
FD000h-FDFFFh
FC000h-FCFFFh
F8000h-FBFFFh
F0000h-F7FFFh
E8000h-EFFFFh
E0000h-E7FFFh
D8000h-DFFFFh
D0000h-D7FFFh
C8000h-CFFFFh
C0000h-C7FFFh
B8000h-BFFFFh
B0000h-B7FFFh
A8000h-AFFFFh
A0000h-A7FFFh
98000h-9FFFFh
90000h-97FFFh
88000h-8FFFFh
80000h-87FFFh
78000h-7FFFFh
70000h-77FFFh
68000h-6FFFFh
60000h-67FFFh
58000h-5FFFFh
50000h-57FFFh
48000h-4FFFFh
40000h-47FFFh
38000h-3FFFFh
30000h-37FFFh
28000h-2FFFFh
20000h-27FFFh
18000h-1FFFFh
10000h-17FFFh
08000h-0FFFFh
00000h-07FFFh
8
32
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
8
7
6
5
4
3
2
1
0
39/57
Block address table
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Table 20. Bottom boot block addresses, M29W160FB
#
Size (Kbytes)
Address range (x 8)
Address range (x 16)
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
64
32
8
1F0000h-1FFFFFh
1E0000h-1EFFFFh
1D0000h-1DFFFFh
1C0000h-1CFFFFh
1B0000h-1BFFFFh
1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
170000h-17FFFFh
160000h-16FFFFh
150000h-15FFFFh
140000h-14FFFFh
130000h-13FFFFh
120000h-12FFFFh
110000h-11FFFFh
100000h-10FFFFh
0F0000h-0FFFFFh
0E0000h-0EFFFFh
0D0000h-0DFFFFh
0C0000h-0CFFFFh
0B0000h-0BFFFFh
0A0000h-0AFFFFh
090000h-09FFFFh
080000h-08FFFFh
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
008000h-00FFFFh
006000h-007FFFh
004000h-005FFFh
000000h-003FFFh
F8000h-FFFFFh
F0000h-F7FFFh
E8000h-EFFFFh
E0000h-E7FFFh
D8000h-DFFFFh
D0000h-D7FFFh
C8000h-CFFFFh
C0000h-C7FFFh
B8000h-BFFFFh
B0000h-B7FFFh
A8000h-AFFFFh
A0000h-A7FFFh
98000h-9FFFFh
90000h-97FFFh
88000h-8FFFFh
80000h-87FFFh
78000h-7FFFFh
70000h-77FFFh
68000h-6FFFFh
60000h-67FFFh
58000h-5FFFFh
50000h-57FFFh
48000h-4FFFFh
40000h-47FFFh
38000h-3FFFFh
30000h-37FFFh
28000h-2FFFFh
20000h-27FFFh
18000h-1FFFFh
10000h-17FFFh
08000h-0FFFFh
04000h-07FFFh
03000h-03FFFh
02000h-02FFFh
00000h-01FFFh
8
7
6
5
4
3
2
1
8
0
16
40/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Table 21. Top boot block addresses, M29W320FT
Block address table
Address range (x 16)
#
Size (Kbyte/Kword)
Address range (x 8)
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
16/8
8/4
3FC000h-3FFFFFh
3FA000h-3FBFFFh
3F8000h-3F9FFFh
3F0000h-3F7FFFh
3E0000h-3EFFFFh
3D0000h-3DFFFFh
3C0000h-3CFFFFh
3B0000h-3BFFFFh
3A0000h-3AFFFFh
390000h-39FFFFh
380000h-18FFFFh
370000h-37FFFFh
360000h-36FFFFh
350000h-35FFFFh
340000h-34FFFFh
330000h-33FFFFh
320000h-32FFFFh
310000h-31FFFFh
300000h-30FFFFh
2F0000h-2FFFFFh
2E0000h-2EFFFFh
2D0000h-2DFFFFh
2C0000h-2CFFFFh
2B0000h-2BFFFFh
2A0000h-2AFFFFh
290000h-29FFFFh
280000h-28FFFFh
270000h-27FFFFh
260000h-26FFFFh
250000h-25FFFFh
240000h-24FFFFh
230000h-23FFFFh
220000h-22FFFFh
210000h-21FFFFh
200000h-20FFFFh
1FE000h-1FFFFFh
1FD000h-1FDFFFh
1FC000h-1FCFFFh
1F8000h-1FBFFFh
1F0000h-1F7FFFh
1E8000h-1EFFFFh
1E0000h-1E7FFFh
1D8000h-1DFFFFh
1D0000h-1D7FFFh
1C8000h-1CFFFFh
1C0000h-1C7FFFh
1B8000h-1BFFFFh
1B0000h-1B7FFFh
1A8000h-1AFFFFh
1A0000h-1A7FFFh
198000h-19FFFFh
190000h-197FFFh
188000h-18FFFFh
180000h-187FFFh
178000h-17FFFFh
170000h-177FFFh
168000h-16FFFFh
160000h-167FFFh
158000h-15FFFFh
150000h-157FFFh
148000h-14FFFFh
140000h-147FFFh
138000h-13FFFFh
130000h-137FFFh
128000h-12FFFFh
120000h-127FFFh
118000h-11FFFFh
110000h-117FFFh
108000h-10FFFFh
100000h-107FFFh
8/4
32/16
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
41/57
Block address table
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Table 21. Top boot block addresses, M29W320FT (continued)
#
Size (Kbyte/Kword)
Address range (x 8)
Address range (x 16)
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
1F0000h-1FFFFFh
1E0000h-1EFFFFh
1D0000h-1DFFFFh
1C0000h-1CFFFFh
1B0000h-1BFFFFh
1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
170000h-17FFFFh
160000h-16FFFFh
150000h-15FFFFh
140000h-14FFFFh
130000h-13FFFFh
120000h-12FFFFh
110000h-11FFFFh
100000h-10FFFFh
0F0000h-0FFFFFh
0E0000h-0EFFFFh
0D0000h-0DFFFFh
0C0000h-0CFFFFh
0B0000h-0BFFFFh
0A0000h-0AFFFFh
090000h-09FFFFh
080000h-08FFFFh
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
000000h-00FFFFh
0F8000h-0FBFFFh
0F0000h-0F7FFFh
0E8000h-0EFFFFh
0E0000h-0E7FFFh
0D8000h-0DFFFFh
0D0000h-0D7FFFh
0C8000h-0CFFFFh
0C0000h-0C7FFFh
0B8000h-0BFFFFh
0B0000h-0B7FFFh
0A8000h-0AFFFFh
0A0000h-0A7FFFh
098000h-09FFFFh
090000h-097FFFh
088000h-08FFFFh
080000h-087FFFh
078000h-07FFFFh
070000h-077FFFh
068000h-06FFFFh
060000h-067FFFh
058000h-05FFFFh
050000h-057FFFh
048000h-04FFFFh
040000h-047FFFh
038000h-03FFFFh
030000h-037FFFh
028000h-02FFFFh
020000h-027FFFh
018000h-01FFFFh
010000h-017FFFh
008000h-00FFFFh
000000h-007FFFh
8
7
6
5
4
3
2
1
0
42/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Table 22. Bottom boot block addresses, M29W320FB
Block address table
Address range (x 16)
#
Size (Kbyte/Kword)
Address range (x 8)
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
3F0000h-3FFFFFh
3E0000h-3EFFFFh
3D0000h-3DFFFFh
3C0000h-3CFFFFh
3B0000h-3BFFFFh
3A0000h-3AFFFFh
390000h-39FFFFh
380000h-18FFFFh
370000h-37FFFFh
360000h-36FFFFh
350000h-35FFFFh
340000h-34FFFFh
330000h-33FFFFh
320000h-32FFFFh
310000h-31FFFFh
300000h-30FFFFh
2F0000h-2FFFFFh
2E0000h-2EFFFFh
2D0000h-2DFFFFh
2C0000h-2CFFFFh
2B0000h-2BFFFFh
2A0000h-2AFFFFh
290000h-29FFFFh
280000h-28FFFFh
270000h-27FFFFh
260000h-26FFFFh
250000h-25FFFFh
240000h-24FFFFh
230000h-23FFFFh
220000h-22FFFFh
210000h-21FFFFh
200000h-20FFFFh
1F0000h-1FFFFFh
1E0000h-1EFFFFh
1D0000h-1DFFFFh
1F8000h-1FFFFFh
1F0000h-1F7FFFh
1E8000h-1EFFFFh
1E0000h-1E7FFFh
1D8000h-1DFFFFh
1D0000h-1D7FFFh
1C8000h-1CFFFFh
1C0000h-1C7FFFh
1B8000h-1BFFFFh
1B0000h-1B7FFFh
1A8000h-1AFFFFh
1A0000h-1A7FFFh
198000h-19FFFFh
190000h-197FFFh
188000h-18FFFFh
180000h-187FFFh
178000h-17FFFFh
170000h-177FFFh
168000h-16FFFFh
160000h-167FFFh
158000h-15FFFFh
150000h-157FFFh
148000h-14FFFFh
140000h-147FFFh
138000h-13FFFFh
130000h-137FFFh
128000h-12FFFFh
120000h-127FFFh
118000h-11FFFFh
110000h-117FFFh
108000h-10FFFFh
100000h-107FFFh
0F8000h-0FBFFFh
0F0000h-0F7FFFh
0E8000h-0EFFFFh
43/57
Block address table
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Table 22. Bottom boot block addresses, M29W320FB (continued)
#
Size (Kbyte/Kword)
Address range (x 8)
Address range (x 16)
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
32/16
8/4
1C0000h-1CFFFFh
1B0000h-1BFFFFh
1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
170000h-17FFFFh
160000h-16FFFFh
150000h-15FFFFh
140000h-14FFFFh
130000h-13FFFFh
120000h-12FFFFh
110000h-11FFFFh
100000h-10FFFFh
0F0000h-0FFFFFh
0E0000h-0EFFFFh
0D0000h-0DFFFFh
0C0000h-0CFFFFh
0B0000h-0BFFFFh
0A0000h-0AFFFFh
090000h-09FFFFh
080000h-08FFFFh
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
008000h-00FFFFh
006000h-007FFFh
004000h-005FFFh
000000h-003FFFh
0E0000h-0E7FFFh
0D8000h-0DFFFFh
0D0000h-0D7FFFh
0C8000h-0CFFFFh
0C0000h-0C7FFFh
0B8000h-0BFFFFh
0B0000h-0B7FFFh
0A8000h-0AFFFFh
0A0000h-0A7FFFh
098000h-09FFFFh
090000h-097FFFh
088000h-08FFFFh
080000h-087FFFh
078000h-07FFFFh
070000h-077FFFh
068000h-06FFFFh
060000h-067FFFh
058000h-05FFFFh
050000h-057FFFh
048000h-04FFFFh
040000h-047FFFh
038000h-03FFFFh
030000h-037FFFh
028000h-02FFFFh
020000h-027FFFh
018000h-01FFFFh
010000h-017FFFh
008000h-00FFFFh
004000h-007FFFh
003000h-003FFFh
002000h-002FFFh
000000h-001FFFh
8
7
6
5
4
3
2
1
8/4
0
16/8
44/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Common Flash interface (CFI)
Appendix B
Common Flash interface (CFI)
The common flash interface is a JEDEC approved, standardized data structure that can be
read from the Flash memory device. It allows a system software to query the device to
determine various electrical and timing parameters, density information and functions
supported by the memory. The system can interface easily with the device, enabling the
software to upgrade itself when necessary.
When the CFI Query command is issued the device enters CFI Query mode and the data
structure is read from the memory. Tables 23, 24, 25, 26, 27 and 28 show the addresses
used to retrieve the data.
The CFI data structure also contains a security area where a 64 bit unique security number
is written (see Table 28: Security code area). This area can be accessed only in Read mode
by the final user. It is impossible to change the security number after it has been written by
Numonyx. Issue a Read command to return to Read mode.
(1)
Table 23. Query structure overview
Address
Sub-section name
Description
x 16
x 8
Command set ID and algorithm data
offset
10h
20h
CFI query identification string
1Bh
27h
36h
4Eh
System interface information
Device geometry definition
Device timing & voltage information
Flash device layout
Primary algorithm-specific
extended query table
Additional information specific to the
primary algorithm (optional)
40h
61h
80h
C2h
Security code area
64 bit unique device number
1. Query data are always presented on the lowest order data outputs.
45/57
Common Flash interface (CFI)
M29W160FT, M29W160FB, M29W320FT, M29W320FB
(1)
Table 24. CFI query identification string
Address
Data
Description
Value
x 16
x 8
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
34h
0051h
"Q"
"R"
"Y"
0052h Query Unique ASCII String "QRY"
0059h
0002h
AMD
Primary algorithm command set and control interface ID
code 16 bit ID code defining a specific algorithm
Compatible
0000h
0040h
Address for primary algorithm extended query table (see
Table 27)
P = 40h
NA
0000h
0000h
Alternate vendor command set and control interface id
code second vendor - specified algorithm supported
0000h
0000h
0000h
Address for alternate algorithm extended query table
NA
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
46/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Common Flash interface (CFI)
Table 25. CFI query system interface information
Address
Data
Description
Value
2.7 V
3.6 V
x 16
x 8
VCC logic supply minimum Program/Erase voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 mV
1Bh
36h 0027h
38h 0036h
VCC logic supply maximum Program/Erase voltage
1Ch
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 mV
0000h M29W160FT/B
V
PP [programming] supply minimum Program/Erase voltage
NA
11.5 V
NA
V
PP [programming] supply minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Dh 3Ah
00B5h M29W320FT/B
0000h M29W160FT/B VPP [programming] supply maximum Program/Erase voltage
V
PP [programming] supply maximum Program/Erase voltage
1Eh 3Ch
00C5h M29W320FT/B
12.5 V
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Fh
20h
21h
22h
3Eh 0004h Typical timeout per single byte/word program = 2n µs
40h 0000h Typical timeout for minimum size write buffer program = 2n µs
42h 000Ah Typical timeout per individual block erase = 2n ms
44h 0000h Typical timeout for full chip erase = 2n ms
16 µs
NA
1 s
NA
0004h M29W160FT/B Maximum timeout for byte/word program = 2n times typical
256 µs
512 µs
NA
23h
24h
25h
26h
46h
0005h M29W320FT/B Maximum timeout for byte/word program = 2n times typical
48h 0000h Maximum timeout for write buffer program = 2n times typical
0003h M29W160FT/B Maximum timeout per individual block erase = 2n times typical
8 s
4Ah
0004h M29W320FT/B Maximum timeout per individual block erase = 2n times typical
16 s
NA
4Ch 0000h Maximum timeout for chip erase = 2n times typical
47/57
Common Flash interface (CFI)
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Table 26.
Address
Device geometry definition
Data
Description
Value
x 16
x 8
0015h M29W160FT/B device size = 2n in number of bytes
0016h M29W320FT/B device size = 2n in number of bytes
2 Mbyte
4 Mbyte
27h
4Eh
28h
29h
50h
52h
0002h
x 8, x 16
Async.
Flash device interface code description
0000h
2Ah
2Bh
54h
56h
0000h
Maximum number of bytes in multi-byte program or page = 2n
0000h
NA
4
Number of Erase Block Regions within the device.
2Ch
58h
0004h
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
2Dh
2Eh
5Ah
5Ch
0000h Region 1 information
1
16 Kbyte
2
0000h Number of identical size erase block = 0000h+1
2Fh
30h
5Eh
60h
0040h Region 1 information
0000h Block size in Region 1 = 0040h * 256 byte
31h
32h
62h
64h
0001h Region 2 information
0000h Number of identical size erase block = 0001h+1
33h
34h
66h
68h
0020h Region 2 information
8 Kbyte
1
0000h Block size in Region 2 = 0020h * 256 byte
35h
36h
6Ah
6Ch
0000h Region 3 information
0000h Number of identical size erase block = 0000h+1
37h
38h
6Eh
70h
0080h Region 3 Information
32 Kbyte
31
0000h Block size in Region 3 = 0080h * 256 byte
001Eh M29W160FT/B Region 4 information
0000h Number of identical-size erase block = 001Eh+1
39h
3Ah
72h
74h
003Eh M29W320FT/B Region 4 information
63
0000h Number of identical-size erase block = 003Eh+1
3Bh
3Ch
76h
78h
0000h Region 4 information
64 Kbyte
0001h Block size in Region 4 = 0100h * 256 byte
48/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Common Flash interface (CFI)
Table 27. Primary algorithm-specific extended query table
Address
Data
Description
Value
x 16
x 8
40h
41h
42h
43h
44h
80h
82h
84h
86h
88h
0050h
0052h
0049h
"P"
"R"
"I"
Primary algorithm extended query table unique ASCII string
“PRI”
0031h Major version number, ASCII
0030h Minor version number, ASCII
"1"
"0"
Address Sensitive Unlock (bits 1 to 0)
0000h 00 = required, 01= not required
Silicon Revision Number (bits 7 to 2)
45h
8Ah
Yes
Erase Suspend
46h
47h
48h
49h
8Ch
8Eh
90h
92h
0002h
2
1
00 = not supported, 01 = Read only, 02 = Read and Write
Block Protection
0001h
00 = not supported, x = number of blocks in per group
Temporary Block Unprotect
0001h
Yes
4
00 = not supported, 01 = supported
Block Protect /Unprotect
0004h
04 = M29W400B
4Ah
4Bh
94h
96h
0000h Simultaneous operations, 00 = not supported
0000h Burst mode, 00 = not supported, 01 = supported
No
No
Page mode, 00 = not supported, 01 = 4 page word, 02 = 8 page
4Ch
98h
0000h
word
No
VPP supply minimum Program/Erase voltage
00B5h bit 7 to 4 HEX value in volts
4Dh(1)
9Ah
11.5 V
bit 3 to 0 BCD value in 100 mV
V
PP supply minimum Program/Erase voltage
4Eh(1)
4Fh(1)
9Ch
9Eh
00C5h bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
12.5 V
–
Top/Bottom Boot Block Flag
000xh
02h = Bottom Boot device, 03h = Top Boot device
1. Only for the M29W320FT/B devices.
Table 28. Security code area
Address
Data
Description
x16
x8
61h
62h
63h
64h
C3h, C2h
C5h, C4h
C7h, C6h
C9h, C8h
XXXX
XXXX
XXXX
XXXX
64 bit: unique device number
49/57
Block protection
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Appendix C
Block protection
Block protection can be used to prevent any operation from modifying the data stored in the
Flash memory. Each Block can be protected individually. Once protected, Program and
Erase operations on the block fail to change the data.
There are three techniques that can be used to control Block Protection, these are the
Programmer technique, the In-System technique and Temporary Unprotection. Temporary
Unprotection is controlled by the Reset/Block Temporary Unprotection pin, RP; this is
described in the signal descriptions section.
Unlike the command interface of the Program/Erase controller, the techniques for protecting
and unprotecting blocks could change between different Flash memory suppliers.
9.1
Programmer technique
The Programmer technique uses high (V ) voltage levels on some of the bus pins. These
ID
cannot be achieved using a standard microprocessor bus, therefore the technique is
recommended only for use in Programming Equipment.
To protect a block follow the flowchart in Figure 19: Programmer equipment block protect
flowchart. During the Block Protect algorithm, the Amax-A12 address inputs indicate the
address of the block to be protected. The block will be correctly protected only if Amax-A12
remain valid and stable, and if Chip Enable is kept Low, V , all along the Protect and Verify
IL
phases.
The Chip Unprotect algorithm is used to unprotect all the memory blocks at the same time.
This algorithm can only be used if all of the blocks are protected first. To unprotect the chip
follow Figure 20: Programmer equipment chip unprotect flowchart. Table 29: Programmer
technique bus operations, BYTE = V or V , gives a summary of each operation.
IH
IL
The timing on these flowcharts is critical. Care should be taken to ensure that, where a
pause is specified, it is followed as closely as possible. Do not abort the procedure before
reaching the end. Chip Unprotect can take several seconds and a user message should be
provided to show that the operation is progressing.
9.2
In-system technique
The in-system technique requires a high voltage level on the Reset/Blocks Temporary
Unprotect pin, RP. This can be achieved without violating the maximum ratings of the
components on the microprocessor bus, therefore this technique is suitable for use after the
Flash memory has been fitted to the system.
To protect a block follow the flowchart in Figure 21: In-system equipment block protect
flowchart. To unprotect the whole chip it is necessary to protect all of the blocks first, then all
the blocks can be unprotected at the same time. To unprotect the chip follow Figure 22: In-
system equipment chip unprotect flowchart.
The timing on these flowcharts is critical. Care should be taken to ensure that, where a
pause is specified, it is followed as closely as possible. Do not allow the microprocessor to
service interrupts that will upset the timing and do not abort the procedure before reaching
the end. Chip Unprotect can take several seconds and a user message should be provided
to show that the operation is progressing.
50/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Block protection
Table 29. Programmer technique bus operations, BYTE = V or V
IH
IL
Data inputs/outputs
DQ15A–1, DQ14-DQ0
Address inputs
A0-Amax
Operation
E
G
W
A9 = VID,
A12-Amax Block Address
Block Protect
VIL VID VIL Pulse
X
X
Others = X
A9 = VID, A12 = VIH, A15 = VIH
Others = X
Chip Unprotect VID VID VIL Pulse
A0 = VIL, A1 = VIH, A6 = VIL,
A9 = VID,
A12-Amax Block Address
Pass = XX01h
Retry = XX00h
BlockProtection
Verify
VIL VIL
VIH
Others = X
A0 = VIL, A1 = VIH, A6 = VIH,
A9 = VID,
A12-Amax Block Address
Block
Unprotection
Verify
Retry = XX01h
Pass = XX00h
VIL VIL
VIH
Others = X
51/57
Block protection
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Figure 19. Programmer equipment block protect flowchart
START
ADDRESS = BLOCK ADDRESS
W = V
IH
n = 0
G, A9 = V
E = V
,
ID
IL
Wait 4 µs
(1)
W = V
IL
Wait 100 µs
W = V
IH
E, G = V
,
IH
A0, A6 = V
A1 = V
,
IL
IH
(1)
E = V
IL
Wait 4 µs
G = V
IL
Wait 60 ns
Read DATA
DATA
=
01h
NO
YES
++n
= 25
NO
A9 = V
IH
E, G = V
IH
YES
PASS
A9 = V
E, G = V
IH
IH
AI03469b
FAIL
1. Address inputs Amax-A12 give the address of the block that is to be protected. It is imperative that they
remain stable during the operation.
2. During the Protect and Verify phases of the algorithm, Chip Enable E must be kept Low, VIL.
52/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Block protection
Figure 20. Programmer equipment chip unprotect flowchart
START
PROTECT ALL BLOCKS
n = 0
CURRENT BLOCK = 0
(1)
A6, A12, A15 = V
IH
E, G, A9 = V
ID
Wait 4 µs
W = V
IL
Wait 10 ms
W = V
IH
E, G = V
IH
ADDRESS = CURRENT BLOCK ADDRESS
A0 = V , A1, A6 = V
IL
IH
E = V
IL
Wait 4 µs
G = V
IL
INCREMENT
CURRENT BLOCK
Wait 60 ns
Read DATA
NO
YES
DATA
=
00h
LAST
BLOCK
NO
NO
++n
= 1000
YES
YES
A9 = V
A9 = V
E, G = V
IH
IH
E, G = V
IH
IH
FAIL
PASS
AI03470
53/57
Block protection
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Figure 21. In-system equipment block protect flowchart
START
n = 0
RP = V
ID
WRITE 60h
ADDRESS = BLOCK ADDRESS
A0 = V , A1 = V , A6 = V
IL
IH
IL
WRITE 60h
ADDRESS = BLOCK ADDRESS
A0 = V , A1 = V , A6 = V
IL
IH
IL
Wait 100 µs
WRITE 40h
ADDRESS = BLOCK ADDRESS
A0 = V , A1 = V , A6 = V
IL
IH
IL
Wait 4 µs
READ DATA
ADDRESS = BLOCK ADDRESS
A0 = V , A1 = V , A6 = V
IL
IH
IL
DATA
NO
=
01h
YES
++n
= 25
NO
RP = V
IH
YES
ISSUE READ/RESET
COMMAND
RP = V
IH
PASS
ISSUE READ/RESET
COMMAND
FAIL
AI03471
54/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Block protection
Figure 22. In-system equipment chip unprotect flowchart
START
PROTECT ALL BLOCKS
n = 0
CURRENT BLOCK = 0
RP = V
ID
WRITE 60h
ANY ADDRESS WITH
A0 = V , A1 = V , A6 = V
IL
IH
IH
IH
WRITE 60h
ANY ADDRESS WITH
A0 = V , A1 = V , A6 = V
IL
IH
Wait 10 ms
WRITE 40h
ADDRESS = CURRENT BLOCK ADDRESS
A0 = V , A1 = V , A6 = V
IL
IH
IH
Wait 4 µs
INCREMENT
CURRENT BLOCK
READ DATA
ADDRESS = CURRENT BLOCK ADDRESS
A0 = V , A1 = V , A6 = V
IL
IH
IH
DATA
NO
YES
=
00h
++n
= 1000
NO
NO
LAST
BLOCK
YES
RP = V
YES
RP = V
IH
IH
ISSUE READ/RESET
COMMAND
ISSUE READ/RESET
COMMAND
PASS
FAIL
AI03472
55/57
Revision history
M29W160FT, M29W160FB, M29W320FT, M29W320FB
10
Revision history
Table 30. Document revision history
Date
Revision
Changes
26-Jun-2006
1
Initial release.
Document status promoted from Preliminary Data to full Datasheet.
TFBGA48 6 x 8 mm package added.
80 ns speed class added.
20-Jul-2007
26-Mar-2008
2
3
Voltage range extended when access time is 80 ns.
Small text changes.
Applied Numonyx branding.
56/57
M29W160FT, M29W160FB, M29W320FT, M29W320FB
Please Read Carefully:
INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR
IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT
AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY
WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF
NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE,
MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility
applications.
Numonyx may make changes to specifications and product descriptions at any time, without notice.
Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the
presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied,
by estoppel or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.
Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves
these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order.
Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by
visiting Numonyx's website at http://www.numonyx.com.
Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries.
*Other names and brands may be claimed as the property of others.
Copyright © 11/5/7, Numonyx, B.V., All Rights Reserved.
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