M36W216T100ZA6T_技术文档

M36W216T

M36W216B

16 Mbit (1Mb x16, Boot Block) Flash Memory

and 2 Mbit (128K x16) SRAM, Multiple Memory Product

PRELIMINARY DATA

FEATURES SUMMARY

■ SUPPLY VOLTAGE

SRAM

■ 2 Mbit (128K x 16 bit)

– V

= 2.7V to 3.3V

DDF

DDS

PPF

■ ACCESS TIME: 70ns

= V

= 2.7V to 3.3V

DDQF

■ LOW V

DATA RETENTION: 1.5V

DDS

= 12V for Fast Program (optional)

■ POWER DOWN FEATURES USING TWO

■ ACCESS TIME: 85,100ns

CHIP ENABLE INPUTS

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

Figure 1. Packages

– Manufacturer Code: 20h

– Top Device Code, M36W216T: 88CEh

– Bottom Device Code, M36W216B: 88CFh

FLASH MEMORY

■ 16 Mbit (1Mb x16) BOOT BLOCK

FBGA

– 8 x 4 KWord Parameter Blocks (Top or

Bottom Location)

■ PROGRAMMING TIME

– 10µs typical

Stacked LFBGA66 (ZA)

8 x 8 ball array

– Double Word Programming Option

■ BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ SECURITY

– 64 bit user programmable OTP cells

– 64 bit unique device identifier

– One parameter block permanently lockable

May 2001

1/56

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M36W216T, M36W216B

TABLE OF CONTENTS

SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 3. LFBGA Connections (Top view through package). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Signal Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

FUNCTIONAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Figure 4. Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Table 2. Main Operation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Flash Memory Component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 5. Flash Block Addresses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 6. Flash Security Block Memory Map. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

SRAM Component. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

OPERATING MODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Flash Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Flash Command Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Table 3. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Table 4. Read Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 5. Read Block Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 6. Read Protection Register and Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 7. Program, Erase Times and Program/Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . 17

Flash Block Locking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Table 8. Block Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Table 9. Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Flash Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Table 10. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

SRAM Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Table 11. Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Table 12. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 7. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 8. AC Measurement Load Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Table 13. Device Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Table 14. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 9. Flash Read Mode AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Table 15. Flash Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 10. Flash Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Table 16. Flash Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 11. Flash Write AC Waveforms, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Table 17. Flash Write AC Characteristics, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . 29

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M36W216T, M36W216B

Figure 12. Flash Power-Up and Reset AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Table 18. Flash Power-Up and Reset AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Figure 13. SRAM Read Mode AC Waveforms, Address Controlled with UBS = LBS = V . . . . . . 31

IL

Figure 14. SRAM Read AC Waveforms, E1S, E2S or GS Controlled. . . . . . . . . . . . . . . . . . . . . . . 31

Figure 15. SRAM Standby AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Table 19. SRAM Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Figure 16. SRAM Write AC Waveforms, WS Controlled with GS Low . . . . . . . . . . . . . . . . . . . . . . 33

Figure 17. SRAM Write AC Waveforms, WS Controlled with GS High . . . . . . . . . . . . . . . . . . . . . . 33

Figure 18. SRAM Write Cycle Waveform, UBS and LBS Controlled. . . . . . . . . . . . . . . . . . . . . . . . 34

Figure 19. SRAM Write AC Waveforms, E1S Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Table 20. SRAM Write AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Figure 20. SRAM Low V

Figure 21. SRAM Low V

Data Retention AC Waveforms, E1S Controlled . . . . . . . . . . . . . . . . 36

Data Retention AC Waveforms, E2S Controlled . . . . . . . . . . . . . . . . 36

Data Retention Characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

DDS

Table 21. SRAM Low V

PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Figure 22. Stacked LFBGA66 - 8 x 8 ball array, 0.8 mm pitch, Bottom View Package Outline. . . . 37

Table 22. Stacked LFBGA66 - 8 x 8 ball array, 0.8 mm pitch, Package Mechanical Data . . . . . . . 37

Figure 23. Stacked LFBGA66 Daisy Chain - Package Connections (Top view through package) . 38

Figure 24. Stacked LFBGA66 Daisy Chain - PCB Connections proposal (Top view through package)39

PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Table 23. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Table 24. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Table 25. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

APPENDIX A. FLASH MEMORY BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Table 26. Top Boot Block Addresses, M36W216T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Table 27. Bottom Boot Block Addresses, M36W216B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

APPENDIX B. COMMON FLASH INTERFACE (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Table 28. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Table 29. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Table 30. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Table 31. Device Geometry Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Table 32. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Table 33. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

APPENDIX C. FLASH MEMORY FLOWCHARTS and PSEUDO CODES . . . . . . . . . . . . . . . . . . . . . 48

Figure 25. Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48

Figure 26. Double Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

Figure 27. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 50

Figure 28. Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51

3/56

M36W216T, M36W216B

Figure 29. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . 52

Figure 30. Locking Operations Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

APPENDIX D. FLASH MEMORY COMMAND INTERFACE and PROGRAM/ERASE CONTROLLER

STATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Table 34. Write State Machine Current/Next, sheet 1 of 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Table 35. Write State Machine Current/Next, sheet 2 of 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55

4/56

M36W216T, M36W216B

SUMMARY DESCRIPTION

The M36W216 is a low voltage Multiple Memory

Product which combines two memory devices; a

16 Mbit boot block Flash memory and an 2 Mbit

SRAM. Recommended operating conditions do

not allow both the Flash and the SRAM to be ac-

tive at the same time.

Table 1. Signal Names

A0-A16

Address Inputs

A17-A19

DQ0-DQ15

Address Inputs for Flash Chip only

Data Input/Output

The memory is offered in a Stacked LFBGA66 (0.8

mm pitch) package and is supplied with all the bits

erased (set to ‘1’).

V

Flash Power Supply

DDF

V

Flash Power Supply for I/O Buffers

DDQF

Flash Optional Supply Voltage for Fast

Program & Erase

V

PPF

Figure 2. Logic Diagram

V

Flash Ground

SSF

DDS

SSS

V

SRAM Power Supply

SRAM Ground

DDQF

V

DDS

V

DDF

PPF

NC

Not Connected Internally

20

16

A0-A19

DQ0-DQ15

Flash control functions

EF

Chip Enable input

EF

GF

Output Enable input

Write Enable input

Reset input

WF

RPF

WPF

RPF

WPF

M36W216T

M36W216B

Write Protect input

E1S

E2S

GS

SRAM control functions

E1S, E2S

GS

Chip Enable inputs

Output Enable input

Write Enable input

WS

UBS

LBS

UBS

Upper Byte Enable input

Lower Byte Enable input

LBS

V

SSS

SSF

AI90253

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M36W216T, M36W216B

Figure 3. LFBGA Connections (Top view through package)

7

8

#3

#4

#1

#2

1

2

3

4

5

6

A15

A10

A14

A9

A

B

C

D

E

F

NC

A16

WF

A11

A8

A13

A12

WS

V

NC

SSF

DDQF

DQ15

DQ13

DQ12

DQ14

DQ4

DQ7

NC

DQ6

E2S

DQ10

DQ8

A2

DQ5

V

RPF

V

SSS

DDS

DDF

WPF

V

A19

GS

A7

DQ11

DQ2

DQ0

A1

DQ3

PPF

LBS

A18

NC

UBS

DQ9

A3

DQ1

E1S

NC

G

H

A17

A5

A6

A0

NC

A4

EF

V

GF

NC

SSF

AI90254

Signal Descriptions

buffers, decoders and sense amplifiers. When

Chip Enable is at V and Resetis at V the device

IL

IH

See Figure 2 Logic Diagram and Table 1,Signal

Names, for a brief overview of the signals connect-

ed to this device.

is in active mode. When Chip Enable is at V the

IH

memory is deselected, the outputs are high imped-

ance and thepower consumption is reduced to the

standby level.

Flash Output Enable (GF). The Output Enable

controls the data outputs during the Bus Read op-

eration of the Flash memory.

Address Inputs (A0-A16). Addresses

A0-A16

are common inputs for the Flash and the SRAM

components. The Address Inputs select the cells

in the memory array to access during Bus Read

operations. During Bus Write operations they con-

trol the commands sent to the Command Interface

of the internal state machine. The Flash memory is

accessed through the Chip Enable (EF) and Write

Enable (WF) signals, while the SRAM is accessed

through two Chip Enable signals (E1S and E2S)

and the Write Enable signal (WS).

Flash Write Enable (WF). The Write Enable

controls the Bus Write operation of the Flash

memory’s Command Interface. The data and ad-

dress inputs are latched on the rising edge of Chip

Enable, EF, or Write Enable, WF, whichever oc-

curs first.

Address Inputs (A17-A19). Addresses A17-A19

are inputs for the Flash component only. The

Flash memory is accessed through the Chip En-

able (EF) and Write Enable (WF) signals

Flash Write Protect (WPF). Write Protect is an

input that gives an additional hardware protection

for each block. When Write Protect is at V , the

IL

Lock-Down is enabled and the protection status of

the block cannot be changed. When Write Protect

Data Input/Output (DQ0-DQ15). The Data I/O

outputs the data stored at the selected address

during a Bus Read operation or inputs a command

or the data to be programmed during a Write Bus

operation.

Flash Chip Enable (EF). The Chip Enable input

activates the Flash memory control logic, input

is at V , the Lock-Down is disabled and the block

IH

can be locked or unlocked. (refer to Table 6, Read

Protection Register and Protection Register Lock).

Flash Reset (RPF). The Reset input provides a

hardware reset of the Flash memory. When Reset

is at V , the memory is in reset mode: the outputs

IL

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M36W216T, M36W216B

are high impedance and the current consumption

is minimized. After Reset all blocks are in the

V

and V

Supply Voltage (2.7V to 3.3V).

DDQF

DDS

V

DDQF

provides the power supply for the Flash

Locked state. When Reset is at V , the device is

IH

memory I/O pins and V

supply for the SRAM control pins. This allows all

Outputs to be powered independently from the

Flash core power supply, V

provides the power

DDS

in normal operation. Exiting reset mode the device

enters read array mode, but a negative transition

of Chip Enable or a change of the address is re-

quired to ensure valid data outputs.

. V

can be tied

DDF DDQF

to V

DDS

SRAM Chip Enable (E1S, E2S). The Chip En-

V

PPF

Program Supply Voltage. V

is both a

PPF

able inputs activate the SRAM memory control

control input and a power supply pin for the Flash

memory. The two functions are selected by the

voltage range applied to the pin. The Supply Volt-

logic, input buffers and decoders. E1S at V or

IH

E2S at V deselects the memory and reduces the

IL

power consumption to the standby level. E1S and

E2S can also be used to control writing to the

age V

and the Program Supply Voltage V

DDF

PPF

can be applied in any order.

If V is kept in a low voltage range (0V to 3.6V)

SRAM memory array, while WS remains at V It

IL.

PPF

is not allowed to set EF at V E1S at V and E2S

IL,

IL

V

PPF

is seen as a control input. In this case a volt-

at V at the same time.

IH

age lower than V

gives an absolute protection

PPLK

SRAM Write Enable (WS). The Write Enable in-

put controls writing to the SRAM memory array.

WS is active low.

against program or erase, while V

ables these functions (see Table 14, DC Charac-

teristics for the relevant values). V is only

> V

en-

PPF

PP1

PPF

SRAM Output Enable (GS). The Output Enable

gates the outputs through the data buffers during

a read operation of the SRAM memory. GS is ac-

tive low.

sampled at the beginning of a program or erase; a

change in its value after the operation has started

does not have any effect and program or erase op-

erations continue.

SRAM Upper Byte Enable (UBS). The Upper

Byte Enable enables the upper bytes for SRAM

(DQ8-DQ15). UBS is active low.

If V

is in the range 11.4V to 12.6V it acts as a

PPF

power supply pin. In this condition V

stable until the Program/Erase algorithm is com-

pleted (see Table 16 and 17).

must be

PPF

SRAM Lower Byte Enable (LBS). The Lower

Byte Enable enables the lower bytes for SRAM

(DQ0-DQ7). LBS is active low.

V

and V

Ground. V

and V

are the

SSF

SSS

SSF

SSS

ground reference for all voltage measurements in

the Flash and SRAM chips, respectively.

V

Supply Voltage (2.7V to 3.3V). V

pro-

DDF

vides the power supply to the internal core of the

Flash Memory device. It is the main power supply

for all operations (Read, Program and Erase).

Note: Each device in a system should have V

D-

, V

and V

decoupled with a 0.1µF ca-

DF DDQF

PPF

pacitor close to the pin. See Figure 9, AC

Measurement Load Circuit. The PCB trace

widths should be sufficient to carry the re-

quired V

program and erase currents.

PPF

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M36W216T, M36W216B

FUNCTIONAL DESCRIPTION

The Flash and SRAM components have separate

power supplies and grounds and are distinguished

by three chip enable inputs: EF for the Flash mem-

ory and, E1S and E2S for the SRAM.

Recommended operating conditions do not allow

both the Flash and the SRAM to be in active mode

at the same time. The most common example is

simultaneous read operations on the Flash and

the SRAM which would result in a data bus con-

tention. Therefore it is recommended to put the

SRAM in the high impedance state when reading

the Flash and vice versa (see Table 2 Main Oper-

ation Modes for details).

Figure 4. Functional Block Diagram

V

DDQF

DDF

PPF

EF

GF

WF

RPF

WPF

Flash Memory

16 Mbit (x16)

A17-A19

A0-A16

V

SSF

V

DQ0-DQ15

DDS

E1S

E2S

GS

SRAM

2 Mbit (x16)

WS

UBS

LBS

V

SSS

AI90255

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M36W216T, M36W216B

Table 2. Main Operation Modes

Operation

(1)

V

EF GF WF RPF WPF

E1S E2S GS WS

DQ15-DQ0

UBS, LBS

PPF

Mode

Data

Output

V

Read

X

Don’t care

or

SRAM must be disabled

IL

IH

V

CCF

V

IH

Write

SRAM must be disabled

Data Input

IH

IL

V

PPFH

Block

Locking

V

IL

X

Don’t care

SRAM must be disabled

X

IH

Standby

Reset

X

Don’t care

Any SRAM mode is allowed

Hi-Z

IH

V

X

IL

Output

Disable

V

IH

Don’t care

Any SRAM mode is allowed

Hi-Z

IL

IH

Data out

Word Read

Read

Write

Flash must be disabled

V

IL

IH

IL

IH

IL

Data in

Word Write

V

IL

IH

X

Hi-Z

IH

Standby/

Power

Down

V

Any Flash mode is allowable

X

IL

X

V

IH

X

V

X

IH

Data

Retention

V

X

IL

X

V

IH

Output

Disable

V

IH

Any Flash mode is allowable

X

Hi-Z

IL

IH

Note: X = V or V , V

= 12V ± 5%.

IL

IH

PPFH

1. If UBS and LBS are tied together the bus is at 16 bit. For an 8 bit bus configuration use UBSand LBS separately.

9/56

M36W216T, M36W216B

Flash Memory Component

The Flash Memory is a 16 Mbit (1 Mbit x 16) de-

vice that can be erased electrically at the block

level and programmed in-system on a Word-by-

Word basis. These operations can be performed

using a single low voltage (2.7 to 3.3V) supply

against program or erase. All blocks are locked at

Power Up.

Each block can be erased separately. Erase can

be suspended in order to perform either read or

program in any other block and then resumed.

Program can be suspended to read data in any

other block and then resumed. Each block can be

programmed and erased over 100,000 cycles.

and the V

for device I/0 operation feature the

DDQF

same voltage range. An optional 12V V

power

PPF

supply is provided to speed up customer pro-

The device includes a 128 bit Protection Register

and a Security Block to increase the protection of

a system design. The Protection Register is divid-

ed into two 64 bit segments, the first one contains

a unique device number written by ST, while the

second one is one-time-programmable by the us-

er. The user programmable segment can be per-

manently protected. The Security Block,

parameter block 0, can be permanently protected

by the user. Figure 6, shows the Flash Security

Block Memory Map.

gramming.

The device features an asymmetrical blocked ar-

chitecture with an array of 39 blocks: 8 Parameter

Blocks of 4 KWord and 31 Main Blocks of 32

KWord. The device denoted by “T” suffix has the

Parameter Blocks at the top of the memory ad-

dress space while the one denoted by “B” suffix lo-

cates the Parameter Blocks starting from the

bottom. The memory maps are shown in Figure 5,

Block Addresses.

The Flash Memory features an instant, individual

block locking scheme that allows any block to be

locked or unlocked with no latency, enabling in-

stant code and data protection. All blocks have

three levels of protection. They can be locked and

locked-down individually preventing any acciden-

tal programming or erasure. There is an additional

hardware protection against program and erase.

Program and Erase commands are written to the

Command Interface of the memory. An on-chip

Program/Erase Controller takes care of the tim-

ings necessary for program and erase operations.

The end of a program or erase operation can be

detected and any error conditions identified. The

command set required to control the memory is

consistent with JEDEC standards.

When V

≤ V

all blocks are protected

PPF

PPLK

10/56

M36W216T, M36W216B

Figure 5. Flash Block Addresses

Top Boot Block Addresses

Bottom Boot Block Addresses

FFFFF

4 KWords

FF000

32 KWords

F8000

F7FFF

Total of

4 KWord Blocks

8

F0000

Total of 31

32 KWord Blocks

F8FFF

4 KWords

F8000

F7FFF

32 KWords

F0000

0FFFF

32 KWords

4 KWords

08000

07FFF

Total of 31

07000

32 KWord Blocks

Total of

8

0FFFF

4 KWord Blocks

32 KWords

08000

07FFF

00FFF

00000

32 KWords

4 KWords

00000

AI90256

Note: Also see Appendix A, Tables 26 and 27 for a full listing of the Flash Block Addresses.

Figure 6. Flash Security Block Memory Map

88h

User Programmable OTP

85h

84h

Parameter Block # 0

Unique device number

81h

80h

Protection Register Lock

2

1

0

AI90257

SRAM Component

cess time of 70 ns in all conditions. The memory

operations can be performed using a single low

voltage supply, 2.7V to 3.3V, which is the same as

the Flash voltage supply.

The SRAM is an 2 Mbit asynchronous random ac-

cess memory which features a super low voltage

operation and low current consumption with an ac-

11/56

M36W216T, M36W216B

OPERATING MODES

Flash Bus Operations

puts will still output data if a bus Read operation is

in progress.

There are six standard bus operations that control

the device. These are Bus Read, Bus Write, Out-

put Disable, Standby, Automatic Standby and Re-

set. See Table 2, Main Operation Modes, for a

summary.

Typically glitches of less than 5ns on Chip Enable

or Write Enable are ignored by the memory and do

not affect bus operations.

Reset. During Reset mode when Output Enable

is Low, V , the memory is deselected and the out-

IL

puts are high impedance. The memory is in Reset

mode when Reset is at V . The power consump-

IL

tion is reduced to the Standby level, independently

from the Chip Enable, Output Enable or Write En-

able inputs. If Reset is pulled to V

during a Pro-

SSF

gram or Erase, this operation is aborted and the

memory content is no longer valid.

Read. Read Bus operations are used to output

the contents of the Memory Array, the Electronic

Signature, the Status Register and the Common

Flash Interface. Both Chip Enable and Output En-

Flash Command Interface

All Bus Write operations to the memory are inter-

preted by the Command Interface. Commands

consist of one or more sequential Bus Write oper-

ations. An internal Program/Erase Controller han-

dles all timings and verifies the correct execution

of the Program and Erase commands. The Pro-

gram/Erase Controller provides a Status Register

whose output may be read at any time during, to

monitor the progress of the operation, or the Pro-

gram/Erase states. See Appendix 29, Table 34,

Write State Machine Current/Next, for a summary

of the Command Interface.

able must be at V in order to perform a read op-

IL

eration. The Chip Enable input should be used to

enable the device. Output Enable should be used

to gate data onto the output. The data read de-

pends on the previous command written to the

memory (see Command Interface section). See

Figure 9, Read Mode AC Waveforms, and Table

15, Flash Read AC Characteristics, for details of

when the output becomes valid.

Read mode is the default state of the device when

exiting Reset or after power-up.

Write. Bus Write operations write Commands to

the memory or latch Input Data to be programmed.

A write operation is initiated when Chip Enable

The Command Interface is reset to Read mode

when power is first applied, when exiting from Re-

set or whenever V

is lower than V

. Com-

LKO

DDF

and Write Enable are at V with Output Enable at

IL

mand sequences must be followed exactly. Any

invalid combination of commands will reset the de-

vice to Read mode. Refer to Table 3, Commands,

in conjunction with the text descriptions below.

V . Commands, Input Data and Addresses are

IH

latched on the rising edge of Write Enable or Chip

Enable, whichever occurs first.

See Figures 10 and 11, Write AC Waveforms, and

Tables 16 and 17, Flash Write AC Characteristics,

for details of the timing requirements.

Read Memory Array Command. The

Read

command returns the memory to its Read mode.

One Bus Write cycle is required to issue the Read

Memory Array command and return the memory to

Read mode. Subsequent read operations will read

the addressed location and output the data. When

a device Reset occurs, the memory defaults to

Read mode.

Read Status Register Command. The Status

Register indicates when a program or erase oper-

ation is complete and the success or failure of the

operation itself. Issue a Read Status Register

command to read the Status Register’s contents.

Subsequent Bus Read operations read the Status

Register at any address, until another command is

issued. See Table 10, Status Register Bits, for de-

tails on the definitions of the bits.

Output Disable. The data outputs are high im-

pedance when the Output Enable is at V .

IH

Standby. Standby disables most of the internal

circuitry allowing a substantial reduction of the cur-

rent consumption. The memory is in stand-by

when Chip Enable is at V and the device is in

IH

read mode. The power consumption is reduced to

the stand-by level and the outputs are set to high

impedance, independently from the Output Enable

or Write Enable inputs. If Chip Enable switches to

V

during a program or erase operation, the de-

IH

vice enters Standby mode when finished.

Automatic Standby. Automatic Standby pro-

vides a low power consumption state during Read

mode. Following a read operation, the device en-

ters Automatic Standby after 150ns of bus inactiv-

The Read Status Register command may be is-

sued at any time, even during a Program/Erase

operation. Any Read attempt during a Program/

Erase operation will automatically output the con-

tent of the Status Register.

ity even if Chip Enable is Low, V , and the supply

IL

current is reduced to I

. The data Inputs/Out-

DD1

12/56

M36W216T, M36W216B

Read Electronic Signature Command. The

Read Electronic Signature command reads the

Manufacturer and Device Codes and the Block

Locking Status, or the Protection Register.

The Read Electronic Signature command consists

of one write cycle, a subsequent read will output

the Manufacturer Code, the Device Code, the

Block Lock and Lock-Down Status, or the Protec-

tion and Lock Register. See Tables 4, 5 and 6 for

the valid address.

■ The first bus cycle sets up the Program

command.

■ The secondlatches theAddress and the Data to

be written and starts the Program/Erase

Controller.

During Program operations the memory will ac-

cept the Read Status Register command and the

Program/Erase Suspend command. Typical Pro-

gram times are given in Table 7, Program, Erase

Times and Program/Erase Endurance Cycles.

Read CFI Query Command. The Read Query

Command is used to read data from the Common

Flash Interface (CFI) Memory Area, allowing pro-

gramming equipment or applications to automati-

cally match their interface to the characteristics of

the device. One Bus Write cycle is required to is-

sue the Read Query Command. Once the com-

mand is issued subsequent Bus Read operations

read from the Common Flash Interface Memory

Area. See Appendix B, Common Flash Interface,

Tables 28, 29, 30, 31, 32 and 33 for details on the

information contained in the Common Flash Inter-

face memory area.

Block Erase Command. The Block Erase com-

mand can be used to erase a block. It sets all the

bits within the selected block to ’1’. All previous

data in the block is lost. If the block is protected

then the Erase operation will abort, the data in the

block will not be changed and the Status Register

will output the error.

Programming aborts if Reset goes to V . As data

IL

integrity cannot be guaranteed when the program

operation is aborted, the block containing the

memory location must be erased and repro-

grammed.

See Appendix C, Figure 25, Program Flowchart

and Pseudo Code, for the flowchart for using the

Program command.

Double Word Program Command. This feature

is offered to improve the programming throughput,

writing a page of two adjacent words in paral-

lel.The two words must differ only for the address

A0. Programming should not be attempted when

V

is not at V

PPF

. The command can be execut-

PPF

ed if V

PPH

is below V

but the result is not guar-

PPH

anteed.

Three bus write cycles are necessary to issue the

Double Word Program command.

■ The first bus cycle sets up the Double Word

Program Command.

■ The second bus cycle latches the Address and

Two Bus Write cycles are required to issue the

command.

the Data of the first word to be written.

■ The first bus cycle sets up the Erase command.

■ The third bus cycle latches the Address and the

Data of the secondword to be written and starts

the Program/Erase Controller.

■ The second latches the block address in the

internal state machine and starts the Program/

Erase Controller.

Read operations output the Status Register con-

tent after the programming has started. Program-

If the second bus cycle is not Write Erase Confirm

(D0h), Status Register bits b4 and b5 are set and

the command aborts.

ming aborts if Reset goes to V . As data integrity

IL

cannot be guaranteed when the program opera-

tion is aborted, the block containing the memory

location must be erased and reprogrammed.

Erase aborts if Reset turns to V . As data integrity

IL

cannot be guaranteed when the Erase operation is

aborted, the block must be erased again.

See Appendix C, Figure 26, Double Word Pro-

gram Flowchart and Pseudo Code, for the flow-

chart for using the Double Word Program

command.

During Erase operations the memory will accept

the Read Status Register command and the Pro-

gram/Erase Suspend command, all other com-

mands will be ignored. Typical Erase times are

given in Table 7, Program, Erase Times and Pro-

gram/Erase Endurance Cycles.

See Appendix C, Figure 28, Erase Flowchart and

Pseudo Code, for a suggested flowchart for using

the Erase command.

Clear Status Register Command. The

Clear

Status Register command can be used to reset

bits 1, 3, 4 and 5 in the Status Register to ‘0’. One

bus write cycle is required to issue the Clear Sta-

tus Register command.

The bits in the Status Register do not automatical-

ly return to ‘0’ when a new Program or Erase com-

mand is issued. The error bits in the Status

Register should be cleared before attempting a

new Program or Erase command.

Program Command. The memory array can be

programmed word-by-word. Two bus write cycles

are required to issue the Program Command.

13/56

M36W216T, M36W216B

Program/Erase Suspend Command. The Pro-

gram/Erase Suspend command is used to pause

a Program or Erase operation. One bus write cycle

is required to issue the Program/Erase command

and pause the Program/Erase controller.

■ The secondlatches theAddress and the Data to

be written to the Protection Register and starts

the Program/Erase Controller.

Read operations output the Status Register con-

tent after the programming has started.

During Program/Erase Suspend the Command In-

terface will accept the Program/Erase Resume,

Read Array,Read Status Register, ReadElectron-

ic Signature and Read CFI Query commands. Ad-

ditionally, if the suspend operation was Erase then

the Program, Block Lock, Block Lock-Down or

Protection Program commands will also be ac-

cepted. The block being erased may be protected

by issuing the Block Protect, Block Lock or Protec-

tion Program commands. When the Program/

Erase Resume command is issued the operation

will complete. Only the blocks not being erased

may be read or programmed correctly.

The segment can be protected by programming bit

1 of the Protection Lock Register. Bit 1 of the Pro-

tection Lock Register protects bit 2 of the Protec-

tion Lock Register. Programming bit 2 of the

Protection Lock Register will result in a permanent

protection of the Security Block (see Figure 6,

Flash Security Block Memory Map). Attempting to

program a previously protected Protection Regis-

ter will result in a Status Register error. The pro-

tection of the Protection Register and/or the

Security Block is not reversible.

The Protection Register Program cannot be sus-

pended.

During a Program/Erase Suspend, the device can

be placed in a pseudo-standby mode by taking

Block Lock Command. The Block Lock com-

mand is used to lock ablock and prevent Program

or Erase operations from changing the data in it.

All blocks are locked at power-up or reset.

Chip Enable to V . Program/Erase is aborted if

IH

Reset turns to V .

IL

See Appendix C, Figure 27, Program or Double

Word Program Suspend & Resume Flowchart and

Pseudo Code, and Figure 29, Erase Suspend &

Resume Flowchart and Pseudo Code for flow-

charts for using the Program/Erase Suspend com-

mand.

Two Bus Write cycles are required to issue the

Block Lock command.

■ The first bus cycle sets up the Block Lock

command.

■ The second Bus Write cycle latches the block

address.

Program/Erase Resume Command. The Pro-

gram/Erase Resume command can be used to re-

The Lock Status can be monitored for each block

using the Read Block Signature command. Table.

9 shows the Lock Status after issuing a Block Lock

command.

The Block Lock bits are volatile, once set they re-

main set until reset or power-down/power-up.

They are cleared by a Blocks Unlock command.

Refer to the section, Block Locking, for a detailed

explanation.

start the Program/Erase Controller after

a

Program/Erase Suspend operation has paused it.

One Bus Write cycle is required to issue the com-

mand. Once the command is issued subsequent

Bus Read operations read the Status Register.

See Appendix C, Figure 27, Program or Double

Word Program Suspend & Resume Flowchart and

Pseudo Code, and Figure 29, Erase Suspend &

Resume Flowchart and Pseudo Code for flow-

charts for using the Program/Erase Resume com-

mand.

Protection Register Program Command. The

Protection Register Program command is used to

Program the 64 bit user One-Time-Programmable

(OTP) segment of the Protection Register. The

segment is programmed 16 bits at a time. When

shipped all bits in the segment are set to ‘1’. The

user can only program the bits to ‘0’.

Block Unlock Command. The Blocks Unlock

command is used to unlock a block, allowing the

block to be programmed or erased. Two Bus Write

cycles are required to issue the Blocks Unlock

command.

■ The first bus cycle sets up the Block Unlock

command.

■ The second Bus Write cycle latches the block

address.

The Lock Status can be monitored for each block

using the Read Block Signature command. Table.

9 shows the Lock Status after issuing a Block Un-

lock command. Refer to the section, Block Lock-

ing, for a detailed explanation.

Two write cycles are required to issue the Protec-

tion Register Program command.

■ The first bus cycle sets up the Protection

Register Program command.

14/56

M36W216T, M36W216B

Block Lock-Down Command. A locked block

cannot be Programmed or Erased, or have its

■ The second Bus Write cycle latches the block

address.

Lock status changed when WP is low, V . When

IL

The Lock Status can be monitored for each block

using the Read Block Signature command.

Locked blocks revert to the protected (and not

locked) state when the device is reset on power-

down. Table. 9 shows the Lock Status after issuing

a Block Lock-Down command. Refer to the sec-

tion, Block Locking, for a detailed explanation.

WP is high, V the Lock-Down function is dis-

IH,

abled and the locked blocks can be individually un-

locked by the Block Unlock command.

Two Bus Write cycles are required to issue the

Block Lock command.

■ The first bus cycle sets up the Block Lock

command.

Table 3. Commands

Bus Write Operations

No. of

Cycles

1st Cycle

2nd Cycle

Addr

3nd Cycle

Addr

Commands

Bus

Op.

Bus

Op.

Bus

Op.

Addr Data

Data

Read

Addr

Read Memory Array

Read Status Register

1+

Write

X

FFh

70h

Data

Read

Status

Register

X

Signature

Read Electronic Signature

Read CFI Query

Erase

1+

2

Write

X

55h

X

90h

98h

20h

Read

Write

Signature

Query

D0h

(1)

Addr

CFI Addr

Block

Addr

40h or

10h

Data

Input

Program

2

3

Write

X

Write

Addr

Data

Input

Data

Input

(2)

30h

Addr 1

Write

Addr 2

Double Word Program

Clear Status Register

Program/Erase Suspend

Program/Erase Resume

1

Write

X

50h

B0h

D0h

Block

Address

Block Protect

Block Unprotect

Block Lock

2

Write

X

60h

C0h

Write

01h

D0h

2Fh

Block

Address

Block

Address

Protection Register

Program

Data

Input

Address

Note: X = Don’t Care.

1. The signature addresses are listed in Tables 4, 5 and 6.

2. Addr 1 and Addr 2 must be consecutive Addresses differing only for A0.

15/56

M36W216T, M36W216B

Table 4. Read Electronic Signature

Code

Device

EF GF WF A0 A1 A2-A7

A8-A11

A12-A20

DQ0-DQ7 DQ8-DQ15

Manufacture

Code

V

0

Don’t Care Don’t Care

20h

00h

IL

IH

IL

V

M36W216T

M36W216B

0

Don’t Care Don’t Care

CEh

CFh

88h

IL

IH

IL

Device

Code

V

Note: RPF = V

.

IH

Table 5. Read Block Signature

Block Status

Locked Block

EF

GF WF A0

A1 A2-A7

A8-A20

A12-A20

DQ0 DQ1 DQ2-DQ15

V

0

Don’t Care Block Address

1

0

00h

IL

IH

IL

IH

V

Unlocked Block

IL

Locked-Down

Block

(1)

V

0

Don’t Care Block Address

1

00h

IL

IH

IL

IH

X

Note: 1. A Locked Block can be protected ”DQ0 = 1” or unprotected ”DQ0 = 0”; see Block Locking section.

Table 6. Read Protection Register and Lock Register

Word

EF GF WF A0-A7

A8-A20

DQ0

DQ1

DQ2

DQ3-DQ7 DQ8-DQ15

OTP Prot.

data

Security

Lock

V

80h Don’t Care

0

00h

IL

IH

prot. data

ID data

V

Unique ID 0

Unique ID 1

Unique ID 2

Unique ID 3

OTP 0

81h Don’t Care

82h Don’t Care

83h Don’t Care

84h Don’t Care

ID data

IL

IH

ID data

85h Don’t Care OTP data

86h Don’t Care OTP data

87h Don’t Care OTP data

88h Don’t Care OTP data

OTP data

OTP data OTP data OTP data

OTP 1

OTP 2

OTP 3

16/56

M36W216T, M36W216B

Table 7. Program, Erase Times and Program/Erase Endurance Cycles

Flash Memory

Parameter

Word Program

Test Conditions

Unit

Min

Typ

10

Max

200

5

V

= V

µs

PPF

DDF

V

= 12V ±5%

= V

Double Word Program

10

µs

PPF

0.16

0.32

0.02

0.04

1

s

PPF

Main Block Program

V

5

s

PPF

DDF

V

= 12V ±5%

4

s

PPF

Parameter Block Program

Main Block Erase

V

= V

4

s

PPF

DDF

= 12V ±5%

10

s

PPF

V

= V

1

s

PPF

DDF

= 12V ±5%

0.8

s

PPF

Parameter Block Erase

V

= V

DDF

PPF

Program/Erase Cycles (per Block)

100,000

cycles

Flash Block Locking

Unlocked State. Unlocked blocks (states (0,0,0),

(1,0,0) (1,1,0)), can be programmed or erased. All

unlocked blocks return to the Locked state when

the device is reset or powered-down. The status of

an unlocked block can be changed to Locked or

Locked-Down using the appropriate software

commands. A locked block can be unlocked by is-

suing the Unlock command.

Lock-Down State. Blocks that are Locked-Down

(state (0,1,1))are protected from program and

erase operations (as for Locked blocks) but their

Lock status cannot be changed using software

commands alone. ALocked or Unlocked block can

be Locked-Down by issuing the Lock-Down com-

mand. Locked-Down blocks revert to the Locked

state when the device is reset or powered-down.

The Flash Memory features an instant, individual

block locking scheme that allows any block to be

locked or unlocked with no latency. This locking

scheme has three levels of protection.

■ Lock/Unlock - this first level allows software-

only control of block locking.

■ Lock-Down - this second level requires

hardware interaction before locking can be

changed.

■ V

PPF

≤ V

- the third level offers a complete

PPLK

hardware protection against programand erase

on all blocks.

The locking status of each block can be set to

Locked, Unlocked, and Lock-Down. The following

sections explain the operation of the locking sys-

tem. Table 7, defines all of the possible locking

states (WP, DQ1, DQ0), and Appendix C, Figure

30, shows a flowchart for the locking operations.

The Lock-Down function is dependent on the WPF

input pin. When WPF=0 (V ), the blocks in the

IL

Lock-Down state (0,1,1) are protected from pro-

gram, erase and lock status changes. When

WPF=1 (V ) the Lock-Down function is disabled

Locked State. The default status of all blocks on

power-up or reset is Locked (states (0,0,1) or

(1,0,1)). Locked blocks are fully protected from

any program or erase. Any program or erase oper-

ations attempted on a locked block will return an

error in the Status Register. The Status of a

Locked block can be changed to Unlocked or

Lock-Down using the appropriate software com-

mands. An Unlocked block can be Locked by issu-

ing the Lock command.

IH

(1,1,1) and Locked-Down blocks can be individu-

ally unlocked to the (1,1,0) state by issuing the

software command, where they can be erased and

programmed. These blocks can then be re-locked

(1,1,1) and unlocked (1,1,0) as desired while WPF

remains high. When WPF is low, blocks that were

previously Locked-Down return to the Lock-Down

state (0,1,1) regardless of any changes made

while WPF was high. Device reset or power-down

resets all blocks, including those in Lock-Down, to

the Locked state.

17/56

M36W216T, M36W216B

Reading a Block’s Lock Status. The lock status

of every block can be read in the Read Electronic

Signature mode of the device. To enter this mode

write 90h to the device. Subsequent reads at Block

Address 00002h will output the lock status of that

block. The lock status is represented by DQ0 and

DQ1. DQ0 indicates the Block Lock/Unlock status

and is set by the Lock command and cleared by

the Unlock command. it is also automatically set

when entering Lock-Down. DQ1 indicates the

Lock-Down status and is set by the Lock-Down

command. It cannot be cleared by software, only

by a device reset or power-down.

To change block locking during an erase opera-

tion, first write the Erase Suspend command, then

check the status register until it indicates that the

erase operation has been suspended. Next write

the desired Lock command sequence to a block

and the lock status will be changed. After complet-

ing any desired lock, read, or program operations,

resume the erase operation with the Erase Re-

sume command.

If a block is locked or locked-down during an erase

suspend of the same block, the locking status bits

will be changed immediately, but when the erase

is resumed, the erase operation will complete.

Locking Operations During Erase Suspend.

Locking operations cannot be performed during a

program suspend. Refer to Appendix D, Com-

mand Interface and Program/Erase Controller

State, for detailed information on which com-

mands are valid during erase suspend.

Changes to block lock status can be performed

during an erase suspend by using the standard

locking command sequences to unlock, lock or

lock-down a block. This is useful in the case when

another block needs to be updated while an erase

operation is in progress.

Table 8. Block Lock Status

Item

Address

Data

Block Lock Configuration

Block is Unlocked

xx002

LOCK

DQ0=0

DQ0=1

DQ1=1

Block is Locked

Block is Locked-Down

Table 9. Lock Status

Current

(1)

Next Lock Status

(WPF, DQ1, DQ0)

(1)

Lock Status

(WPF, DQ1, DQ0)

After

Block Lock

Command

After

Block Unlock

Command

After Block

Lock-Down

Command

Program/Erase

After

WPF transition

Current State

Allowed

1,0,0

yes

no

1,0,1

1,1,1

0,0,1

1,0,0

1,1,0

0,0,0

1,1,1

0,1,1

0,0,0

0,0,1

0,1,1

1,0,0

1,0,1

(2)

1,0,1

1,1,0

1,1,1

0,0,0

yes

no

yes

no

(2)

0,0,1

(3)

0,1,1

no

0,1,1

1,1,1 or 1,1,0

Note: 1. The lock status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block) as read

in the Read Electronic Signature command with A1 = V and A0 = V

.

IL

IH

2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WPF status.

3. A WPF transition to V on a locked block will restore the previous DQ0 value, giving a 111 or 110.

IH

18/56

M36W216T, M36W216B

Flash Status Register

pend command being issued therefore the memo-

ry may still complete the operation rather than

entering the Suspend mode.

When a Program/Erase Resume command is is-

sued the Erase Suspend Status bit returns Low.

The Status Register provides information on the

current or previous Program or Erase operation.

The various bits convey information and errors on

the operation. To read the Status register the

Read StatusRegister command can be issued, re-

fer to Read Status Register Command section. To

output the contents, the Status Register is latched

on the falling edge of the Chip Enable or Output

Enable signals, and can be read until Chip Enable

or Output Enable returns to V . Either Chip En-

able or Output Enable must be toggled to update

the latched data.

Bus Read operations from any address always

read the Status Register during Program and

Erase operations.

Erase Status (Bit 5). The EraseStatus bit can be

used to identify if the memory has failed to verify

that the block has erased correctly. When the

Erase Status bit is High (set to ‘1’), the Program/

Erase Controller has applied the maximum num-

ber of pulses to the block and still failed to verify

that the block has erased correctly. The Erase Sta-

tus bit should be read once the Program/Erase

Controller Status bit is High (Program/Erase Con-

troller inactive).

Once set High, the Erase Status bit can only be re-

set Low by a Clear Status Register command or a

hardware reset. If set High it should be reset be-

fore a new Program or Erase command is issued,

otherwise the new command will appear to fail.

Program Status (Bit 4). The Program Status bit

is used to identify a Program failure. When the

Program Status bit is High (set to ‘1’), the Pro-

gram/Erase Controller has applied the maximum

number of pulses to the byte and still failed to ver-

ify that it has programmed correctly. The Program

Status bit should be read once the Program/Erase

Controller Status bit is High (Program/Erase Con-

troller inactive).

Once set High, the Program Status bit can only be

reset Low by a Clear Status Register command or

a hardware reset. If set High it should be reset be-

fore a new command is issued, otherwise the new

command will appear to fail.

IH

The bits in the Status Register are summarized in

Table 10, Status Register Bits. Refer to Table 10

in conjunction with the following text descriptions.

Program/Erase Controller Status (Bit 7). ThePro-

gram/Erase Controller Status bit indicates whether

the Program/Erase Controller is active or inactive.

When the Program/Erase Controller Status bit is

Low (set to ‘0’), the Program/Erase Controller is

active; when the bit is High (set to ‘1’), the Pro-

gram/Erase Controller is inactive, and the device

is ready to process a new command.

The Program/Erase Controller Status is Low im-

mediately after a Program/Erase Suspend com-

mand is issued until the Program/Erase Controller

pauses. After the Program/Erase Controller paus-

es the bit is High.

During Program, Erase, operations the Program/

Erase ControllerStatus bit can be polled to find the

end of the operation. Other bits in the Status Reg-

ister should not be tested until the Program/Erase

Controller completes the operation and the bit is

High.

V

Status (Bit 3). The V

Status bit can be

PPF

used to identify an invalid voltage on the V

PPF

during Program and Erase operations. The V

PPF

pin is only sampled at the beginning of a Program

or Erase operation. Indeterminate results can oc-

After the Program/Erase Controller completes its

cur if V

becomes invalid during an operation.

PPF

operation the Erase Status, Program Status, V

PPF

Status and Block Lock Status bits should be tested

When the V

Status bit is Low (set to ‘0’), the

PPF

for errors.

voltage on the V

voltage; when the V

pin was sampled at a valid

PPF

Status bit is High (set to

PPF

Erase Suspend Status (Bit 6). The Erase Sus-

pend Status bit indicates that an Erase operation

has been suspended or is going to be suspended.

When the Erase Suspend Status bit is High (set to

‘1’), a Program/Erase Suspend command has

been issued and the memory is waiting for a Pro-

gram/Erase Resume command.

‘1’), the V

PPF

pin has a voltage that is below the

PPF

V

Lockout Voltage, V

, the memory is pro-

PPLK

tected and Program and Erase operations cannot

be performed.

Once set High, the V

set Low by a Clear Status Register command or a

hardware reset. If set High it should be reset be-

fore a new Program or Erase command is issued,

otherwise the new command will appear to fail.

Status bit can only be re-

PPF

The Erase Suspend Status should only be consid-

ered validwhen theProgram/Erase Controller Sta-

tus bit is High (Program/Erase Controller inactive).

Bit 7 is set within 30µs of the Program/Erase Sus-

19/56

M36W216T, M36W216B

Program Suspend Status (Bit 2). The Program

Suspend Status bit indicates that a Program oper-

ation has been suspended. When the Program

Suspend Status bit is High (set to ‘1’), a Program/

Erase Suspend command has been issued and

the memory is waiting for a Program/Erase Re-

sume command. The Program Suspend Status

should only be considered valid when the Pro-

gram/Erase Controller Status bit is High (Program/

Erase Controller inactive). Bit 2 is set within 5µs of

the Program/Erase Suspend command being is-

sued therefore the memory may still complete the

operation rather than entering the Suspend mode.

Block Protection Status (Bit 1). The Block Pro-

tection Status bit can be used to identify if a Pro-

gram or Erase operation has tried to modify the

contents of a locked block.

When the Block Protection Status bit is High (set

to ‘1’), a Program or Erase operation has been at-

tempted on a locked block.

Once set High, the Block Protection Status bit can

only be reset Low by a Clear Status Register com-

mand or a hardware reset. If set High it should be

reset before a new command is issued, otherwise

the new command will appear to fail.

Reserved (Bit 0). Bit 0 of the Status Register is

reserved. Its value must be masked.

When a Program/Erase Resume command is is-

sued theProgram Suspend Status bit returns Low.

Note: Refer to Appendix C, Flowcharts and

Pseudo Codes, for using the Status Register.

Table 10. Status Register Bits

Bit

Name

Logic Level

Definition

’1’

’0’

’1’

’0’

’1’

’0’

’1’

’0’

’1’

’0’

’1’

’0’

’1’

’0’

Ready

7

P/E.C. Status

Busy

Suspended

6

5

4

3

2

Erase Suspend Status

Erase Status

In progress or Completed

Erase Error

Erase Success

Program Error

Program Status

Program Success

V

Invalid, Abort

OK

PPF

V

Status

PPF

Suspended

Program Suspend Status

In Progress or Completed

Program/Erase on protected block, Abort

No operation to protected blocks

1

0

Block Protection Status

Reserved

Note: Logic level ’1’ is High, ’0’ is Low.

SRAM Operations

V , Chip Enable, E2S, is at V , and ByteEnables,

IL IH

UBS and LBS are at V .

IL

There are five standard operations that control the

SRAM component. These are Bus Read, Bus

Write, Standby/Power-down, Data Retention and

Output Disable. A summary is shown in Table 2,

Main Operation Modes

Read. Read operations are used to output the

contents of the SRAM Array. The SRAM is in Read

mode whenever Write Enable, WS, is at V , Out-

Valid data will be availableon the output pins after

a time of t after the last stable address. If the

AVQV

Chip Enable or Output Enable access times are

not met, data access will be measured from the

limiting parameter (t

, t

, or t

) rath-

GLQV

E1LQV E2HQV

er than the address. Data out may be indetermi-

nate at t , t and t , but data lines

E1LQX E2HQX

GLQX

IH

will always be valid at t

13 and 14).

(see Table 19, Figures

AVQV

put Enable, GS, is at V , Chip Enable, E1S, is at

IL

20/56

M36W216T, M36W216B

Write. Write operations are used to write data to

the SRAM. The SRAM is in Write mode whenever

first, and remain valid for t

, t

or t

WHDX E1HAX E2LAX

(see Table 20, Figure 16, 17, 18 and 19).

WS and E1S are at V , and E2S is at V . Either

IL

IH

Standby/Power-Down. The SRAM component

has a chip enabled power-down feature which in-

vokes an automatic standby mode (see Table 19,

Figure 15). The SRAM is in Standby mode when-

the Chip Enable inputs, E1S and E2S, or the Write

Enable input, WS, must be deasserted during ad-

dress transitions for subsequent write cycles.

A Write operation is initiated when E1S is at V ,

ever either Chip Enable is deasserted, E1S at V

IL

IH

E2S is at V and WS is at V . The data is latched

or E2S at V . It is also possible when UBS and

IL

IH

IL

o the falling edge of E1S, the rising edge of E2S or

the falling edge of WS, whichever occurs last. The

Write cycle is terminated on the rising edge of

E1S, the rising edge of WS or the falling edge of

E2S, whichever occurs first.

LBS are at V .

Data Retention. The SRAM data retention per-

formances as V

in Table 21 and Figure 20, 21. In E1S controlled

data retention mode, the minimum standby current

mode is entered when E1S ≥ V

IH

go down to V are described

DDS

DR

If the Output is enabled (E1S=V , E2S=V and

– 0.2V and

DDS

IL

IH

GS=V ), then WS will return the outputs to high

E2S ≤ 0.2V or E2S ≥ V

– 0.2V. In E2S con-

IL

DDS

impedance within t

of its falling edge. Care

trolled data retention mode, minimum standby cur-

WLQZ

must be taken to avoid bus contention in this type

rent mode is entered when E2S ≤ 0.2V.

Output Disable. The data outputs are high im-

of operation. The Data input must be valid for t

D-

before the rising edge of Write Enable, for

VWH

t

pedance when the Output Enable, GS, is at V

IH

before the rising edge of E1S or for t

DVE1H

DVE2L

with Write Enable, WS, at V .

IH

before the falling edge of E2S, whichever occurs

MAXIMUM RATING

Stressing the device above the rating listed in the

Absolute Maximum Ratings table may cause per-

manent damage to the device. These are stress

ratings only and operation of the device at these or

any other conditions above those indicated in the

Operating sections of this specification is not im-

plied. Exposure to Absolute Maximum Rating con-

ditions for extended periods may affect device

reliability. Refer also to the STMicroelectronics

SURE Program and other relevant quality docu-

ments.

Table 11. Absolute Maximum Ratings

Value

Symbol

Parameter

Unit

Min

–40

–55

–0.5

–0.6

–0.5

Max

85

(1)

T

°C

V

A

Ambient Operating Temperature

Temperature Under Bias

Storage Temperature

Input or Output Voltage

Flash Supply Voltage

Program Voltage

T

125

155

BIAS

T

STG

V

+0.3

DDQF

IO

V

, V

3.9

13

V

DDF DDQF

V

PPF

V

DDS

V

SRAM Supply Voltage

3.9

V

Note: 1. Depends on range.

21/56

M36W216T, M36W216B

DC AND AC PARAMETERS

This section summarizes the operating and mea-

surement conditions, and the DC and AC charac-

teristics of the device. The parameters in the DC

and AC characteristics Tables that follow, are de-

rived from tests performed under the Measure-

ment Conditions summarized in Table 12,

Operating and AC Measurement Conditions. De-

signers should check that the operating conditions

in their circuit match the measurement conditions

when relying on the quoted parameters.

Table 12. Operating and AC Measurement Conditions

SRAM

Flash Memory

85/100

Parameter

70

Units

Min

–

Max

–

Min

2.7

Max

3.3

85

V

Supply Voltage

V

DDF

V

Supply Voltage

2.7

– 40

3.3

85

2.7

DDQ F = DDS

Ambient Operating Temperature

– 40

°C

pF

ns

V

Load Capacitance (C )

50

L

Input Rise and Fall Times

Input Pulse Voltages

5

0 to V

DDQF

V

/2

DDQF

V

/2

DDQF

Input and Output Timing Ref. Voltages

V

Figure 7. AC Measurement I/O Waveform

Figure 8. AC Measurement Load Circuit

V

DDQF

V

DDQ

V

/2

DDQ

V

DDQF

0V

V

DDF

25kΩ

AI90258

DEVICE

UNDER

TEST

Note: V

means V = V

DDQF DDS

DDQ

C

L

25kΩ

0.1µF

C

includes JIG capacitance

AI90259

L

Table 13. Device Capacitance

Symbol

Parameter

Input Capacitance

Output Capacitance

Test Condition

Typ

12

Max

14

Unit

C

V

= 0V, f=1 MHz

pF

IN

C

OUT

V

OUT

20

22

Note: Sampled only, not 100% tested.

22/56

M36W216T, M36W216B

Table 14. DC Characteristics

Symbol

Parameter

Device

Test Condition

Min

Typ

Max

Unit

Flash &

SRAM

I

LI

Input Leakage Current

0V ≤ V ≤ V

±2

µA

IN

DDQF

0V ≤ V

SRAM Outputs Hi-Z

≤ V

Flash &

SRAM

OUT

DDQF,

I

Output Leakage Current

±10

50

2

µA

mA

µA

LO

EF = V ± 0.2V

DDQF

Flash

SRAM

Flash

15

20

15

1

V

= V

max

DDF

DDQF

I

V

Standby Current

DD

DDS

E1S = E2S ≥ V

– 0.2V

DDS

or E2S ≤ 0.2V

Supply Current

(Reset)

RPF = V ± 0.2V

DDD

SSF

V

= V or V

IL IH,

IN

I

= 0 mA, cycle time = 1µs

IO

I

Supply Current

SRAM

DD

V

= V or V

IL IH,

IN

7

12

20

50

I

= 0 mA, min cycle time

IO

Supply Current

(Read)

I

EF = V , GF = V f = 5 MHz

IL IH,

Flash

10

5

DDR

Supply Current

(Program)

Program in progress

Erase in progress

DDW

Supply Current

(Erase)

I

DDE

Supply Current

(Erase Suspend)

I

Erase Suspend in progress

Program Suspend in progress

DDES

Supply Current

(Program Suspend)

I

DDWS

V

≤ V

DDQF

0.2

100

0.2

5

µA

PPF

Program Current

(Standby)

I

Flash

PPS

V

> V

400

5

PPF

DDF

≤ V

PPF

DDQF

Program Current

(Read)

I

PPR

V

= V

100

400

PPF

DDF

V

= 12V ± 0.6V

Program Current

(Program)

PPF

I

Flash

10

mA

PPW

Program in progress

V

= 12V ± 0.6V

Program Current

(Erase)

PPF

I

mA

V

PPE

Program in progress

Flash &

SRAM

V

= V

≥ 2.7V

Input Low Voltage

Input High Voltage

Output Low Voltage

–0.5

2.2

0.8

IL

DDQF

DDS

V

Flash &

SRAM

DDQF

+0.4

V

IH

DDS

V

DDQF

V

= V

= V min

DDS DD

Flash &

SRAM

DDQF

V

0.1

V

OL

I

= 100µA

OL

= V

= V min

DD

V

Flash &

SRAM

DDQF

DDS

DDQ

V

Output High Voltage

V

OH

I

= –100µA

–0.1

OH

23/56

M36W216T, M36W216B

Symbol

Parameter

Device

Test Condition

Min

Typ

Max

Unit

Program Voltage

(Program or Erase

operations)

V

Flash

1.65

3.6

V

PPL

Program Voltage

(Program or Erase

operations)

V

Flash

11.4

12.6

V

PPH

Program Voltage

(Program and Erase

lock-out)

V

1

2

PPLK

V

Supply Voltage

DDF

V

(Program and Erase

lock-out)

LKO

24/56

M36W216T, M36W216B

Figure 9. Flash Read Mode AC Waveforms

tAVAV

VALID

A0-A19

tAVQV

tAXQX

EF

tELQV

tELQX

tEHQX

tEHQZ

GF

tGLQV

tGHQX

tGHQZ

tGLQX

VALID

DQ0-DQ15

OUTPUTS

ENABLED

ADDR. VALID

CHIP ENABLE

DATA VALID

STANDBY

AI90260

Table 15. Flash Read AC Characteristics

Flash

Unit

Symbol

Alt

Parameter

85

100

t

Address Valid to Next Address Valid

Address Valid to Output Valid

Min

Max

Min

ns

AVAV

RC

t

ACC

AVQV

(1)

t

Address Transition to Output Transition

Chip Enable High to Output Transition

Chip Enable High to Output Hi-Z

0

t

OH

AXQX

(1)

t

Min

Max

Min

Max

Min

ns

t

EHQX

(1)

(2)

(1)

(2)

(1)

t

20

85

0

30

100

0

t

HZ

EHQZ

t

Chip Enable Low to Output Valid

t

CE

ELQV

ELQX

t

LZ

Chip Enable Low to Output Transition

Output Enable High to Output Transition

Output Enable High to Output Hi-Z

Output Enable Low to Output Valid

Output Enable Low to Output Transition

t

0

t

OH

GHQX

t

20

0

30

35

0

t

DF

OE

GHQZ

t

GLQV

t

OLZ

GLQX

Note: 1. Sampled only, not 100% tested.

2. GF may be delayed by up to t

- t

after the falling edge of EF without increasing t

.

ELQV

ELQV GLQV

25/56

M36W216T, M36W216B

Figure 10. Flash Write AC Waveforms, Write Enable Controlled

26/56

M36W216T, M36W216B

Table 16. Flash Write AC Characteristics, Write Enable Controlled

Flash

Unit

Symbol

Alt

Parameter

85

45

0

100

50

t

Write Cycle Time

Min

ns

AVAV

WC

t

Address Valid to Write Enable High

Data Valid to Write Enable High

Chip Enable Low to Write Enable Low

Chip Enable Low to Output Valid

AVWH

AS

DS

CS

t

50

DVWH

t

0

ELWL

ELQV

t

85

100

(1,2)

Output Valid to V

Low

0

t

PPF

QVVPL

t

Output Valid to Write Protect Low

High to Write Enable High

QVWPL

(1)

t

V

PPF

200

t

VPS

VPHWH

t

Write Enable High to Address Transition

Write Enable High to Data Transition

Write Enable High to Chip Enable High

Write Enable High to Output Enable Low

Write Enable High to Write Enable Low

Write Enable Low to Write Enable High

Write Protect High to Write Enable High

Min

0

ns

WHAX

AH

t

0

WHDX

WHEH

DH

CH

t

0

t

25

20

25

45

30

50

WHEL

t

WHGL

WHWL

t

WPH

t

WLWH

WP

t

WPHWH

Note: 1. Sampled only, not 100% tested.

2. Applicable if V is seen as a logic input (V

< 3.6V).

PPF

27/56

M36W216T, M36W216B

Figure 11. Flash Write AC Waveforms, Chip Enable Controlled

28/56

M36W216T, M36W216B

Table 17. Flash Write AC Characteristics, Chip Enable Controlled

Flash

Unit

Symbol

Alt

Parameter

85

45

0

100

50

0

t

Write Cycle Time

Min

ns

AVAV

WC

t

Address Valid to Chip Enable High

Data Valid to Chip Enable High

AVEH

AS

DS

AH

t

DVEH

EHAX

t

Chip Enable High to Address Transition

Chip Enable High to Data Transition

Chip Enable High to Chip Enable Low

Chip Enable High to Output Enable Low

Chip Enable High to Write Enable High

Chip Enable Low to Chip Enable High

Chip Enable Low to Output Valid

0

EHDX

DH

t

CPH

25

0

30

0

EHEL

t

EHGL

t

WH

EHWH

t

CP

45

85

50

100

ELEH

ELQV

t

(1,2)

Output Valid to V

Low

PPF

Min

0

ns

t

QVVPL

t

Data Valid to Write Protect Low

V High to Chip Enable High

PPF

QVWPL

(1)

t

200

0

200

0

t

VPS

VPHEH

t

CS

Write Enable Low to Chip Enable Low

Write Protect High to Chip Enable High

WLEL

t

45

50

WPHEH

Note: 1. Sampled only, not 100% tested.

2. Applicable if V is seen as a logic input (V

< 3.6V).

PPF

29/56

M36W216T, M36W216B

Figure 12. Flash Power-Up and Reset AC Waveforms

WF,EF,GF

tPHWL

tPHEL

tPHGL

tPHEL

tPHGL

RPF

tVDHPH

tPLPH

Reset

VDDF, VDDQF

Power-Up

AI90263

Table 18. Flash Power-Up and Reset AC Characteristics

Flash

Symbol

Parameter

Test Condition

Unit

85

100

During

Program and

Erase

t

PHWL

Min

50

µs

Reset High to Write Enable Low, Chip Enable

Low, Output Enable Low

PHEL

PHGL

others

Min

30

ns

(1,2)

(3)

Reset Low to Reset High

100

t

PLPH

Supply Voltages High to Reset High

Min

50

µs

t

VDHPH

Note: 1. The device Reset is possible but not guaranteed if t

2. Sampled only, not 100% tested.

< 100ns.

PLPH

3. It is important to assert RPF in order to allow proper CPU initialization during power up or reset.

30/56

M36W216T, M36W216B

Figure 13. SRAM Read Mode AC Waveforms, Address Controlled with UBS = LBS = V

IL

tAVAV

VALID

A0-A16

tAVQV

tAXQX

DQ0-DQ15

DATA VALID

AI90264

Note: E1S = Low, E2S = High, GS = Low, WS = High.

Figure 14. SRAM Read AC Waveforms, E1S, E2S or GS Controlled

tAVAV

A0-A16

E1S

VALID

tAVQV

tE1LQV

tAXQX

tE1HQZ

tE1LQX

tE2HQV

tE2LQZ

tBHQZ

E2S

tE2HQX

tBLQV

UBS, LBS

tBLQX

tGLQV

tGHQZ

GS

tGLQX

DQ0-DQ15

DATA VALID

AI90265

Note: Write Enable (WS) = High.

31/56

M36W216T, M36W216B

Figure 15. SRAM Standby AC Waveforms

E1S

E2S

tPU

tPD

I

DD

50%

AI90266

Table 19. SRAM Read AC Characteristics

SRAM

Max

Symbol

Alt

Parameter

Unit

Min

t

Read Cycle Time

70

ns

AVAV

RC

t

ACC

Address Valid to Output Valid

70

AVQV

t

OH

Address Transition to Output Transition

UBS, LBS Disable to Hi-Z Output

UBS, LBS Access Time

0

AXQX

t

BHZ

25

40

BHQZ

t

BLQV

AB

t

BLZ

UBS, LBS Enable to Low-Z Output

Chip Enable 1 High to Output Hi-Z

Chip Enable 1 Low to Output Valid

Chip Enable 1 Low to Output Transition

Chip Enable 2 High to Output Valid

Chip Enable 2 High to Output Transition

Chip Enable 2 Low to Output Hi-Z

Output Enable High to Output Hi-Z

Output Enable Low to Output Valid

Output Enable Low to Output Transition

10

BLQX

t

CHZ1

10

70

E1HQZ

t

ACS1

E1LQV

t

10

5

E1LQX

CLZ1

t

ACS2

70

E2HQV

E2HQX

t

CLZ2

t

CHZ2

10

25

35

E2LQZ

t

OHZ

GHQZ

t

GLQV

GLQX

OE

t

OLZ

5

0

(1)

Chip Enable 1 High or Chip Enable 2 Low to Power Down

Chip Enable 1 Low or Chip Enable 2 High to Power Up

70

ns

t

PD

(1)

PU

Note: 1. Sampled only. Not 100% tested.

32/56

M36W216T, M36W216B

Figure 16. SRAM Write AC Waveforms, WS Controlled with GS Low

tAVAV

A0-A16

VALID

tAVWH

tE1LWH

tAVE1L

tWHAX

E1S

E2S

tAVE2H

tE2HWH

tBLWH

UBS, LBS

WS

tAVWL

tWLWH

tWLQZ

tWHQX

tDVWH

INPUT VALID

tWHDX

DQ0-DQ15

AI90267

Note: Output Enable (GS) = Low.

Figure 17. SRAM Write AC Waveforms, WS Controlled with GS High

tAVAV

A0-A16

VALID

tAVWH

tE1LWH

tAVE1L

tWHAX

E1S

E2S

tAVE2H

tE2HWH

tBLWH

UBS, LBS

tAVWL

tWLWH

WS

GS

tWHQX

tWHDX

tGHQZ

tDVWH

INPUT VALID

DQ0-DQ15

AI90268

33/56

M36W216T, M36W216B

Figure 18. SRAM Write Cycle Waveform, UBS and LBS Controlled

tAVAV

A0-A16

E1S

VALID

tE1LWH

tE1HAX

tAVWH

E2S

tE2HWH

tBLWH

tAVWL

UBS, LBS

tWLWH

WS

tDVWH

DATA VALID

tWHDX

DQ0-DQ15

AI90269

Figure 19. SRAM Write AC Waveforms, E1S Controlled

tAVAV

A0-A16

E1S

VALID

tE1LWH

tAVE1L

tE1HAX

E2S

tBLWH

UBS, LBS

tAVWL

WS

tDVE1H

INPUT VALID

tWHDX

DQ0-DQ15

AI90270

Note: Output Enable (GS) = High.

34/56

M36W216T, M36W216B

Table 20. SRAM Write AC Characteristics

SRAM

Unit

Symbol

Alt

Parameter

Min

Max

t

Write Cycle Time

70

ns

AVAV

WC

t

,

AVE1L

t

AS

Address Valid to Beginning of Write

0

AVE2H

t

AVWL

t

Address Valid to Write Enable High

UBS, LBS Valid to End of Write

60

ns

AVWH

AW

t

BLWH

BW

t

,

DVE1H

t

,

t

Input Valid to End of Write

30

0

ns

DVE2L

DW

WR

DVWH

t

,

E1HAX

t

End of Write to Address Change

E2LAX

t

WHAX

t

Chip Enable 1 Select to End of Write

Chip Enable 2 Select to End of Write

Write Enable High to Input Transition

Write Enable Low to Output Hi-Z

Write Enable Pulse Width

60

0

ns

E1LWH

CW1

CW2

t

E2HWH

t

DH

WHDX

t

25

WLQZ

WHZ

t

WP

50

WLWH

35/56

M36W216T, M36W216B

Figure 20. SRAM Low V

Data Retention AC Waveforms, E1S Controlled

DDS

DATA RETENTION MODE

V

DDS

2.8 V

E2S

tCDR

tR

V

≥ 1.5V

DR

V

DR

E2S ≤ 0.2V

0.4 V

V

SSS

AI90271

Figure 21. SRAM Low V

Data Retention AC Waveforms, E2S Controlled

DDS

tCDR

DATA RETENTION MODE

tR

V

DDS

2.8 V

V

≥ 1.5V

DR

V

DR

E1S ≥ V

– 0.2V

DDS

E1S

V

SSS

AI90272

Table 21. SRAM Low V

Data Retention Characteristic

DDS

Symbol

Parameter

Test Condition

Min

Max

Unit

V

= 2.5V, E1S ≥ V

– 0.2V,

DDS

I

Supply Current (Data Retention)

15

µA

DDDR

E2S ≥ V

– 0.2V or E2S ≤ 0.2V

– 0.2V, E2S ≤ 0.2V

DDS

V

E1S ≥ V

Supply Voltage (Data Retention)

Chip Disable to Power Down

Operation Recovery Time

1.5

0

3.3

V

DR

t

– 0.2V, E2S ≤ 0.2V

CCS

ns

CDR

t

70

R

Note: 1. All other Inputs V ≤ V –0.2V or V ≤ 0.2V.

IH

DD

IL

2. Sampled only. Not 100% tested.

36/56

M36W216T, M36W216B

PACKAGE MECHANICAL

Figure 22. Stacked LFBGA66 - 8 x 8 ball array, 0.8 mm pitch, Bottom View Package Outline

D

D2

D1

SE

b

E

E1

BALL ”A1”

e

ddd

FE

FD

SD

e

A

A2

A1

BGA-Z12

Note: Drawing is not to scale.

Table 22. Stacked LFBGA66 - 8 x 8 ball array, 0.8 mm pitch, Package Mechanical Data

millimeters

inches

Symbol

Typ

Min

Max

Typ

Min

Max

A

A1

A2

b

1.400

0.0551

0.300

0.0118

1.100

0.0433

0.400

12.000

5.600

8.800

0.300

0.500

0.0157

0.4724

0.2205

0.3465

0.0118

0.0197

D

–

D1

D2

ddd

E

–

0.100

0.0039

8.000

5.600

0.800

1.600

1.200

0.400

–

0.3150

0.2205

0.0315

0.0630

0.0472

0.0157

–

E1

e

FD

FE

SD

SE

37/56

M36W216T, M36W216B

Figure 23. Stacked LFBGA66 Daisy Chain - Package Connections (Top view through package)

#3

#4

#1

#2

1

2

3

4

5

6

7

8

A

B

C

D

E

F

G

H

AI90273

38/56

M36W216T, M36W216B

Figure 24. Stacked LFBGA66 Daisy Chain - PCB Connections proposal (Top view through package)

START

POINT

END

POINT

#3

#4

#1

#2

1

2

3

4

5

6

7

8

A

B

C

D

E

F

G

H

AI90274

39/56

M36W216T, M36W216B

PART NUMBERING

Table 23. Ordering Information Scheme

Example:

M36W216T

85 ZA

6

T

Device Type

M36 = MMP (Flash + SRAM)

Operating Voltage

W = V

= 2.7V to 3.3V, V

= V

= 2.7V to 3.3V

DDQF

DDF

DDS

SRAM Chip Size & Organization

2 = 2 Mbit (128K x 16 bit)

Device Function

16 = 16 Mbit (x16), Boot Block

Array Matrix

T = Top Boot

B = Bottom Boot

Speed

85 = 85ns

100 = 100ns

Package

ZA = LFBGA66: 0.8mm pitch

Temperature Range

1 = 0 to 70°C

6 = –40 to 85°C

Option

T = Tape & Reel packing

Devices are shipped from the factory with the memory content bits erased to ’1’.

Table 24. Daisy Chain Ordering Scheme

Example:

M36W216

-ZA T

Device Type

M36W216

Daisy Chain

-ZA = LFBGA66: 0.8mm pitch

Option

T = Tape & Reel Packing

For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-

vice, please contact the STMicroelectronics Sales Office nearest to you.

40/56

M36W216T, M36W216B

REVISION HISTORY

Table 25. Document Revision History

Date

Version

Revision Details

24-May-2001

-01

First Issue

41/56

M36W216T, M36W216B

APPENDIX A. FLASH MEMORY BLOCK ADDRESS TABLES

Table 26. Top Boot Block Addresses,

M36W216T

Table 27. Bottom Boot Block Addresses,

M36W216B

Size

(KWord)

Size

#

Address Range

#

Address Range

(KWord)

32

4

0

4

FF000-FFFFF

FE000-FEFFF

FD000-FDFFF

FC000-FCFFF

FB000-FBFFF

FA000-FAFFF

F9000-F9FFF

F8000-F8FFF

F0000-F7FFF

E8000-EFFFF

E0000-E7FFF

D8000-DFFFF

D0000-D7FFF

C8000-CFFFF

C0000-C7FFF

B8000-BFFFF

B0000-B7FFF

A8000-AFFFF

A0000-A7FFF

98000-9FFFF

90000-97FFF

88000-8FFFF

80000-87FFF

78000-7FFFF

70000-77FFF

68000-6FFFF

60000-67FFF

58000-5FFFF

50000-57FFF

48000-4FFFF

40000-47FFF

38000-3FFFF

30000-37FFF

28000-2FFFF

20000-27FFF

18000-1FFFF

10000-17FFF

08000-0FFFF

00000-07FFF

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

16

15

14

13

12

11

10

9

F8000-FFFFF

F0000-F7FFF

E8000-EFFFF

E0000-E7FFF

D8000-DFFFF

D0000-D7FFF

C8000-CFFFF

C0000-C7FFF

B8000-BFFFF

B0000-B7FFF

A8000-AFFFF

A0000-A7FFF

98000-9FFFF

90000-97FFF

88000-8FFFF

80000-87FFF

78000-7FFFF

70000-77FFF

68000-6FFFF

60000-67FFF

58000-5FFFF

50000-57FFF

48000-4FFFF

40000-47FFF

38000-3FFFF

30000-37FFF

28000-2FFFF

20000-27FFF

18000-1FFFF

10000-17FFF

08000-0FFFF

07000-07FFF

06000-06FFF

05000-05FFF

04000-04FFF

03000-03FFF

02000-02FFF

01000-01FFF

00000-00FFF

1

4

2

4

3

4

5

4

6

4

7

4

8

32

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

8

7

6

4

5

4

3

4

2

4

1

4

0

4

42/56

M36W216T, M36W216B

APPENDIX B. COMMON FLASH INTERFACE (CFI)

The Common Flash Interface is a JEDEC ap-

proved, standardized data structure that can be

read from the Flash memory device. It allows a

system software to query the device to determine

various electrical and timing parameters, density

information and functions supported by the mem-

ory. The system can interface easily with the de-

vice, enabling the software to upgrade itself when

necessary.

structure is read from the memory. Tables 28, 29,

30, 31, 32 and 33 show the addresses used to re-

trieve the data.

The CFI data structure also contains a security

area where a 64 bit unique security number is writ-

ten (see Table 33, Security Code area). This area

can be accessed only in Read mode by the final

user. It is impossible to change the security num-

ber after it has been written by ST. Issue a Read

command to return to Read mode.

When the CFI Query Command (RCFI) is issued

the device enters CFI Query mode and the data

Table 28. Query Structure Overview

Offset

00h

Sub-section Name

Description

Reserved for algorithm-specific information

Command set ID and algorithm data offset

Device timing & voltage information

Flash device layout

Reserved

10h

CFI Query Identification String

System Interface Information

Device Geometry Definition

1Bh

27h

Additional information specific to the Primary

Algorithm (optional)

P

A

Primary Algorithm-specific Extended Query table

Alternate Algorithm-specific Extended Query table

Additional information specific to the Alternate

Algorithm (optional)

Note: Query data are always presented on the lowest order data outputs.

Table 29. CFI Query Identification String

Offset

Data

Description

Value

00h

0020h

Manufacturer Code

Device Code

ST

88CEh

88CFh

Top

Bottom

01h

02h-0Fh

10h

reserved Reserved

0051h

”Q”

”R”

”Y”

11h

0052h

0059h

0003h

0000h

0035h

0000h

Query Unique ASCII String ”QRY”

12h

13h

Primary Algorithm Command Set and Control Interface ID code 16 bit ID code

defining a specific algorithm

Intel

compatible

14h

15h

Address for Primary Algorithm extended Query table (see Table 31)

P = 35h

NA

16h

17h

Alternate Vendor Command Set and Control Interface ID Code second vendor -

specified algorithm supported (0000h means none exists)

18h

19h

Address for Alternate Algorithm extended Query table

(0000h means none exists)

NA

1Ah

Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.

43/56

M36W216T, M36W216B

Table 30. CFI Query System Interface Information

Offset

Data

Description

Value

V

Logic Supply Minimum Program/Erase or Write voltage

DD

1Bh

0027h

2.7V

bit 7 to 4

bit 3 to 0

BCD value in volts

BCD value in 100 mV

Logic Supply Maximum Program/Erase or Write voltage

DD

1Ch

1Dh

1Eh

0036h

00B4h

00C6h

3.6V

11.4V

12.6V

bit 7 to 4

bit 3 to 0

BCD value in volts

BCD value in 100 mV

[Programming] Supply Minimum Program/Erase voltage

PP

bit 7 to 4

bit 3 to 0

HEX value in volts

BCD value in 100 mV

[Programming] Supply Maximum Program/Erase voltage

PP

bit 7 to 4

bit 3 to 0

HEX value in volts

BCD value in 100 mV

n

1Fh

20h

21h

22h

23h

24h

25h

26h

0004h

000Ah

0000h

0005h

0003h

0000h

16µs

1s

Typical time-out per single word program = 2 µs

n

Typical time-out for Double Word Program = 2 µs

n

Typical time-out per individual block erase = 2 ms

n

NA

Typical time-out for full chip erase = 2 ms

n

512µs

8s

Maximum time-out for word program = 2 times typical

n

Maximum time-out for Double Word Program = 2 times typical

n

Maximum time-out per individual block erase = 2 times typical

n

NA

Maximum time-out for chip erase = 2 times typical

44/56

M36W216T, M36W216B

Table 31. Device Geometry Definition

Offset Word

Data

Description

Value

Mode

n

27h

0015h

2 MByte

Device Size = 2 in number of bytes

28h

29h

0001h

0000h

x16

Async.

Flash Device Interface Code description

2Ah

2Bh

0002h

0000h

n

4

2

Maximum number of bytes in multi-byte program or page = 2

Number of Erase Block Regions within the device.

It specifies the number of regions within the device containing contiguous

Erase Blocks of the same size.

2Ch

0002h

2Dh

2Eh

001Eh

0000h

Region 1 Information

Number of identical-size erase block = 001Eh+1

31

64 KByte

8

2Fh

30h

0000h

0001h

Region 1 Information

Block size in Region 1 = 0100h * 256 byte

31h

32h

0007h

0000h

Region 2 Information

Number of identical-size erase block = 0007h+1

33h

34h

0020h

0000h

Region 2 Information

Block size in Region 2 = 0020h * 256 byte

8 KByte

8

2Dh

2Eh

0007h

0000h

Region 1 Information

Number of identical-size erase block = 0007h+1

2Fh

30h

0020h

0000h

Region 1 Information

Block size in Region 1 = 0020h * 256 byte

8 KByte

31

31h

32h

001Eh

0000h

Region 2 Information

Number of identical-size erase block = 001Eh+1

33h

34h

0000h

0001h

Region 2 Information

Block size in Region 2 = 0100h * 256 byte

64 KByte

45/56

M36W216T, M36W216B

Table 32. Primary Algorithm-Specific Extended Query Table

Offset

Data

Description

Value

(1)

P = 35h

(P+0)h = 35h

(P+1)h = 36h

(P+2)h = 37h

(P+3)h = 38h

(P+4)h = 39h

(P+5)h = 3Ah

(P+6)h = 3Bh

(P+7)h = 3Ch

(P+8)h = 3Dh

0050h

0052h

0049h

0031h

0030h

0066h

0000h

”P”

”R”

”I”

Primary Algorithm extended Query table unique ASCII string “PRI”

Major version number, ASCII

Minor version number, ASCII

”1”

”0”

Extended Query table contents for Primary Algorithm. Address (P+5)h

contains less significant byte.

bit 0

bit 1

bit 2

bit 3

bit 4

bit 5

bit 6

bit 7

bit 8

Chip Erase supported

(1 = Yes, 0 = No)

No

Yes

No

Suspend Erase supported

Suspend Program supported

Legacy Lock/Unlock supported

Queued Erase supported

No

Instant individual block locking supported (1 = Yes, 0 = No)

Yes

No

Protection bits supported

Page mode read supported

Synchronous read supported

(1 = Yes, 0 = No)

No

bit 31 to 9 Reserved; undefined bits are ‘0’

(P+9)h = 3Eh

0001h

Supported Functions after Suspend

Read Array, Read Status Register and CFI Query are always supported

during Erase or Program operation

bit 0

Program supported after Erase Suspend (1 = Yes, 0 = No)

Yes

bit 7 to 1 Reserved; undefined bits are ‘0’

(P+A)h = 3Fh

(P+B)h = 40h

0003h

0000h

Block Lock Status

Defines which bits in the Block Status Register section of the Query are

implemented.

Address (P+A)h contains less significant byte

bit 0

bit 1

Block Lock Status bit active

Block Lock-Down Status bit active

(1 = Yes, 0 = No)

Yes

bit 15 to 2 Reserved for future use; undefined bits are ‘0’

(P+C)h = 41h

(P+D)h = 42h

(P+E)h = 43h

0030h

00C0h

0001h

V

Logic Supply Optimum Program/Erase voltage (highest performance)

3V

12V

01

DD

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 mV

Supply Optimum Program/Erase voltage

PP

bit 7 to 4 HEX value in volts

bit 3 to 0 BCD value in 100 mV

Number of Protection register fields in JEDEC ID space.

”00h,” indicates that 256 protection bytes are available

(P+F)h = 44h

(P+10)h = 45h

(P+11)h = 46h

0080h

0000h

0003h

80h

00h

8 Byte

46/56

M36W216T, M36W216B

Offset

Data

Description

Protection Field 1: Protection Description

Value

(1)

P = 35h

(P+12)h = 47h

0003h

8 Byte

This field describes user-available. One Time Programmable (OTP)

Protection register bytes. Some are pre-programmed with device unique

serial numbers. Others are user programmable. Bits 0–15 point to the

Protection register Lock byte, the section’s first byte.

The following bytes are factory pre-programmed and user-programmable.

bit 0 to 7

Lock/bytes JEDEC-plane physical low address

bit 8 to 15

bit 16 to 23

bit 24 to 31

Lock/bytes JEDEC-plane physical high address

n

”n” such that 2 = factory pre-programmed bytes

n

”n” such that 2 = user programmable bytes

(P+13)h = 48h

Reserved

Note: 1. See Table 29, offset 15 for P pointer definition.

Table 33. Security Code Area

Offset

80h

81h

82h

83h

84h

85h

86h

87h

88h

Data

00XX

XXXX

Description

Protection Register Lock

64 bits: unique device number

64 bits: User Programmable OTP

47/56

M36W216T, M36W216B

APPENDIX C. FLASH MEMORY FLOWCHARTS AND PSEUDO CODES

Figure 25. Program Flowchart and Pseudo Code

Start

program_command (addressToProgram, dataToProgram) {:

Write 40h or 10h

writeToFlash (any_address, 0x40) ;

/*or writeToFlash (any_address, 0x10) ; */

writeToFlash (addressToProgram, dataToProgram) ;

/*Memory enters read status state after

the Program Command*/

Write Address

& Data

do {

Read Status

Register

status_register=readFlash (any_address) ;

/* EF or GF must be toggled*/

NO

b7 = 1

YES

} while (status_register.b7== 0) ;

NO

V

Invalid

if (status_register.b3==1) /*V invalid error */

PPF

b3 = 0

YES

Error (1, 2)

error_handler ( ) ;

NO

Program

Error (1, 2)

if (status_register.b4==1) /*program error */

error_handler ( ) ;

b4 = 0

YES

Program to Protected

Block Error (1, 2)

if (status_register.b1==1) /*program to protect block error */

error_handler ( ) ;

b1 = 0

YES

End

}

AI90275

Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after

PP

a sequence.

2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.

48/56

M36W216T, M36W216B

Figure 26. Double Word Program Flowchart and Pseudo Code

Start

Write 30h

double_word_program_command (addressToProgram1, dataToProgram1,

addressToProgram2, dataToProgram2)

{

writeToFlash (any_address, 0x30) ;

writeToFlash (addressToProgram1, dataToProgram1) ;

/*see note (3) */

writeToFlash (addressToProgram2, dataToProgram2) ;

/*see note (3) */

Write Address

& Data 1 (3)

1

2

/*Memory enters read status state after

the Program command*/

Write Address

& Data 2 (3)

do {

status_register=readFlash (any_address) ;

/* EF or GF must be toggled*/

Read Status

Register

NO

b7 = 1

YES

} while (status_register.b7== 0) ;

V

Invalid

if (status_register.b3==1) /*V

error_handler ( ) ;

invalid error */

PPF

b3 = 0

YES

Error (1, 2)

if (status_register.b4==1) /*program error */

error_handler ( ) ;

Program

b4 = 0

YES

Error (1, 2)

Program to Protected

Block Error (1, 2)

if (status_register.b1==1) /*program to protect block error */

error_handler ( ) ;

b1 = 0

YES

End

}

AI90276

Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after

PP

a sequence.

2. If an error is found, the Status Register must be cleared before further Program/Erase operations.

3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.

49/56

M36W216T, M36W216B

Figure 27. Program Suspend & Resume Flowchart and Pseudo Code

Start

program_suspend_command ( ) {

writeToFlash (any_address, 0xB0) ;

Write B0h

Write 70h

writeToFlash (any_address, 0x70) ;

/* read status register to check if

program has already completed */

do {

status_register=readFlash (any_address) ;

/* EF or GF must be toggled*/

Read Status

Register

NO

b7 = 1

YES

} while (status_register.b7== 0) ;

b2 = 1

YES

Program Complete

if (status_register.b2==0) /*program completed */

{ writeToFlash (any_address, 0xFF) ;

read_data ( ) ; /*read data from another block*/

/*The device returns to Read Array

(as if program/erase suspend was not issued).*/

Write FFh

}

Read data from

another address

else

{ writeToFlash (any_address, 0xFF) ;

read_data ( ); /*read data from another address*/

writeToFlash (any_address, 0xD0) ;

/*write 0xD0 to resume program*/

Write D0h

Write FFh

Read Data

}

Program Continues

AI90277

50/56

M36W216T, M36W216B

Figure 28. Erase Flowchart and Pseudo Code

Start

erase_command ( blockToErase ) {

writeToFlash (any_address, 0x20) ;

Write 20h

writeToFlash (blockToErase, 0xD0) ;

/* only A12-A20 are significannt */

/* Memory enters read status state after

the Erase Command */

Write Block

Address & D0h

do {

Read Status

Register

status_register=readFlash (any_address) ;

/* EF or GF must be toggled*/

NO

b7 = 1

} while (status_register.b7== 0) ;

YES

NO

YES

NO

V

Invalid

if (status_register.b3==1) /*V

error_handler ( ) ;

invalid error */

PPF

Error (1)

PPF

b3 = 0

YES

if ( (status_register.b4==1) && (status_register.b5==1) )

/* command sequence error */

Command

Sequence Error (1)

b4, b5 = 1

NO

error_handler ( ) ;

if ( (status_register.b5==1) )

/* erase error */

b5 = 0

YES

Erase Error (1)

error_handler ( ) ;

Erase to Protected

Block Error (1)

if (status_register.b1==1) /*program to protect block error */

error_handler ( ) ;

b1 = 0

YES

End

}

AI90278

Note: If an error is found, the Status Register must be cleared before further Program/Erase operations.

51/56

M36W216T, M36W216B

Figure 29. Erase Suspend & Resume Flowchart and Pseudo Code

Start

Write B0h

erase_suspend_command ( ) {

writeToFlash (any_address, 0xB0) ;

writeToFlash (any_address, 0x70) ;

/* read status register to check if

erase has already completed */

Write 70h

{

Read Status

Register

status_register=readFlash (any_address) ;

/* EF or GF must be toggled*/

NO

b7 = 1

YES

} while (status_register.b7== 1) ;

if (status_register.b6==1) /*erase completed */

{ writeToFlash (any_address, 0xFF) ;

b6 = 1

YES

Erase Complete

read_data ( ) ; /*read data from another block*/

/*The device returns to Read Array

(as if program/erase suspend was not issued).*/

Write FFh

Read data from

another block

or

Program/Protection Program

or

Block Protect/Unprotect/Lock

}

else

{ read_program_data ( );

/*read or program data from another address*/

writeToFlash (any_address, 0xD0) ;

/*write 0xD0 to resume erase*/

Write D0h

Write FFh

Read Data

}

Erase Continues

AI90279

52/56

M36W216T, M36W216B

Figure 30. Locking Operations Flowchart and Pseudo Code

Start

locking_operation_command (address, lock_operation) {

writeToFlash (any_address, 0x60) ; /*configuration setup*/

Write 60h

if (lock_operation==PROTECT) /*to protect the block*/

writeToFlash (address, 0x01) ;

else if (lock_operation==UNPROTECT) /*to unprotect the block*/

writeToFlash (address, 0xD0) ;

Write

01h, D0h or 2Fh

else if (lock_operation==LOCK) /*to lock the block*/

writeToFlash (address, 0x2F) ;

writeToFlash (any_address, 0x90) ;

Write 90h

Read Status

Register

if (readFlash (address) ! = locking_state_expected)

error_handler () ;

NO

Locking

change

/*Check the locking state (see Read Block Signature table )*/

confirmed?

YES

writeToFlash (any_address, 0xFF) ; /*Reset to Read Array mode*/

Write FFh

}

End

AI90280

53/56

M36W216T, M36W216B

APPENDIX D. FLASH MEMORY COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER

STATE

Table 34. Write State Machine Current/Next, sheet 1 of 2

Command Input (and Next State)

Data

When

Read

Current

State

SR

bit 7

Read

Array

(FFh)

Program

Setup

(10/40h)

Erase

Setup

Erase

Confirm

(D0h)

Prog/Ers

Suspend

(B0h)

Prog/Ers

Resume

(D0h)

Read

Status

(70h)

Clear

Status

(50h)

(10/40h)

Read Array “1”

Array

Read Array Prog.Setup Ers. Setup

Read Array

Read Sts. Read Array

Read

“1”

Program

Setup

Erase

Setup

Read

Status

Read Array

Status

Read

“1”

Electronic

Signature

Program

Setup

Erase

Setup

Read

Read Array

Status

Elect.Sg.

Read CFI

“1”

Program

Setup

Erase

Setup

Read

CFI

Read Array

Status

Query

Lock

(complete)

Lock Cmd

Error

Lock

(complete)

Lock Setup

“1”

“0”

“1”

Status

Lock Command Error

Lock Cmd

Error

Program

Setup

Erase

Setup

Read

Read Array

Status

Lock

(complete)

Program

Setup

Erase

Setup

Read

Read Array

Status

Prot. Prog.

Setup

Protection Register Program

Protection Register Program continue

Prot. Prog.

(continue)

Prot. Prog.

(complete)

Program

Setup

Erase

Setup

Read

Status

Read Array

Program

Read Array

Status

Prog. Setup “1”

Program

“0”

Prog. Sus

Read Sts

Program (continue)

(continue)

Prog. Sus

“1”

Prog. Sus

Read Array

Program Suspend to

Read Array

Program

Prog. Sus

Program

Prog. Sus Prog. Sus

Read Sts Read Array

Status

Array

Status

(continue) Read Array (continue)

Program Prog. Sus Program

(continue) Read Array (continue)

Prog. Sus

“1”

Prog. Sus

Read Array

Program Suspend to

Read Array

Prog. Sus Prog. Sus

Read Sts Read Array

Read Array

Prog. Sus

Read

Elect.Sg.

Electronic Prog. Sus

Signature Read Array

Program Suspend to

Read Array

Program

Prog. Sus

Program

Prog. Sus Prog. Sus

Read Sts Read Array

“1”

(continue) Read Array (continue)

Prog. Sus

Read CFI

Prog. Sus

CFI

Program Suspend to

Read Array

Program

Prog. Sus

Program

Prog. Sus Prog. Sus

Read Sts Read Array

“1”

“0”

“1”

Read Array

(continue) Read Array (continue)

Program

(complete)

Program

Setup

Erase

Setup

Read

Status

Array

Read Array

Status

Erase

Setup

Erase

(continue)

Erase

CmdError

Erase

(continue)

Erase Command Error

Erase

Cmd.Error

Program

Setup

Erase

Setup

Read

Read Array

Status

Erase

(continue)

Erase Sus

Read Sts

Erase (continue)

Erase Sus

Read Sts

Erase Sus

Read Array

Program

Setup

Erase Sus

Erase

Erase Sus

Erase

Erase Sus Erase Sus

Read Sts Read Array

Read Array (continue) Read Array (continue)

Erase Sus Erase Erase Sus Erase

Read Array (continue) Read Array (continue)

Erase Sus

Read Array

Erase Sus

Read Array

Program

Setup

Erase Sus Erase Sus

Read Sts Read Array

Erase Sus

Read

Elect.Sg.

Electronic Erase Sus

Signature Read Array

Program

Setup

Erase Sus

Erase

Erase Sus

Erase

Erase Sus Erase Sus

Read Sts Read Array

“1”

Read Array (continue) Read Array (continue)

Erase Sus

Read CFI

Erase Sus

CFI

Program

Setup

Erase Sus

Erase

Erase Sus

Erase

Erase Sus Erase Sus

Read Sts Read Array

“1”

Read Array

Read Array (continue) Read Array (continue)

Erase

(complete)

Program

Setup

Erase

Read

Status

Read Array

Setup

Read Array

Status

Note: Cmd = Command, Elect.Sg. = Electronic Signature, Ers = Erase, Prog. = Program, Prot = Protection, Sus = Suspend.

54/56

M36W216T, M36W216B

Table 35. Write State Machine Current/Next, sheet 2 of 2

Command Input (and Next State)

Read CFI

Query

(98h)

Unlock

Confirm

(D0h)

Current State

Read Elect.Sg.

(90h)

Lock Setup

(60h)

Prot. Prog.

Setup (C0h)

Lock Confirm

(01h)

Lock Down

Confirm (2Fh)

Prot. Prog.

Setup

Read Array

Read Status

Read Elect.Sg. Read CFI Query

Lock Setup

Read Array

Prot. Prog.

Setup

Prot. Prog.

Setup

Read Elect.Sg. Read Elect.Sg. Read CFI Query

Read CFI Query Read Elect.Sg. Read CFI Query

Prot. Prog.

Setup

Read Array

Lock (complete)

Read Array

Lock Setup

Lock Command Error

Prot. Prog.

Setup

Lock Cmd Error Read Elect.Sg. Read CFI Query

Lock Setup

Prot. Prog.

Setup

Lock (complete) Read Elect.Sg. Read CFI Query

Read Array

Prot. Prog.

Setup

Protection Register Program

Prot. Prog.

(continue)

Protection Register Program (continue)

Prot. Prog.

Lock Setup

Read Elect.Sg. Read CFI Query

(complete)

Read Array

Setup

Prog. Setup

Program

(continue)

Program (continue)

Prog. Suspend Prog. Suspend Prog. Suspend

Program

(continue)

Program Suspend Read Array

Read Status

Prog. Suspend Prog. Suspend Prog. Suspend

Read Array Read Elect.Sg. Read CFI Query

Read Elect.Sg. Read CFI Query

Program

(continue)

Prog. Suspend Prog. Suspend Prog. Suspend

Read Elect.Sg. Read Elect.Sg. Read CFI Query

Program

(continue)

Prog. Suspend Prog. Suspend Prog. Suspend

Program

(continue)

Read CFI

Read Elect.Sg. Read CFI Query

Program

(complete)

Prot. Prog.

Lock Setup

Read Elect.Sg. Read CFIQuery

Read Array

Setup

Erase

(continue)

Erase Setup

Erase Command Error

Erase

Cmd.Error

Prot. Prog.

Lock Setup

Read Elect.Sg. Read CFI Query

Setup

Erase (continue)

Erase Suspend Erase Suspend Erase Suspend

Read Ststus Read Elect.Sg. Read CFI Query

Erase

(continue)

Lock Setup

Erase Suspend Read Array

Erase Suspend Erase Suspend Erase Suspend

Read Array Read Elect.Sg. Read CFI Query

Erase

(continue)

Erase Suspend Erase Suspend Erase Suspend

Read Elect.Sg. Read Elect.Sg. Read CFI Query

Erase

(continue)

Erase Suspend Read Array

Erase Suspend Erase Suspend Erase Suspend

Read CFI Query Read Elect.Sg. Read CFI Query

Erase

(continue)

Erase

Prot. Prog.

Setup

Read Elect.Sg. Read CFI Query

(complete)

Read Array

Note: Cmd = Command, Elect.Sg. = Electronic Signature, Prog. = Program, Prot = Protection.

55/56

M36W216T, M36W216B

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is registered trademark of STMicroelectronics

All other names are the property of their respective owners.

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56/56


型号：	M36W216T100ZA6T
厂家：	NUMONYX B.V
描述：	Memory Circuit, 1MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66 静态存储器内存集成电路
文件：	总56页 (文件大小：340K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

M36W216T100ZA6T [NUMONYX]

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