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NAND02GW4B2CZA6E [NUMONYX]

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory; 1千兆位， 2千兆位， 2112字节/ 1056字的页面， 1.8 / 3V ， NAND快闪存储器
NAND02GW4B2CZA6E
元器件型号： NAND02GW4B2CZA6E
生产厂家： NUMONYX B.V    NUMONYX B.V
描述和应用：

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
1千兆位， 2千兆位， 2112字节/ 1056字的页面， 1.8 / 3V ， NAND快闪存储器

闪存 存储
PDF文件： 总60页 (文件大小：1343K)
下载文档：  下载PDF数据表文档文件
型号参数：NAND02GW4B2CZA6E参数
 查看货源

NAND02GW4B2CZA6F

 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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NAND02GW4B2CZA6F

 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

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NAND02GW4B2CZA6F

 Flash, 128MX16, 25000ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-63

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0 NUMONYX

NAND02GW4B2CZB1

 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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5 STMICROELECTR

NAND02GW4B2CZB1

 128MX16 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63

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0 STMICROELECTR

NAND02GW4B2CZB1E

 128MX16 FLASH 3V PROM, 25000ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-63

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0 STMICROELECTR

NAND02GW4B2CZB1F

 暂无描述

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0 STMICROELECTR

NAND02GW4B2CZB1T

 Flash, 128MX16, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63

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0 STMICROELECTR

NAND02GW4B2CZB1T

 Flash, 128MX16, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63

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0 STMICROELECTR

NAND02GW4B2CZB6

 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

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10 STMICROELECTR

NAND02GW4B2CZB6

 128MX16 FLASH 3V PROM, 35ns, PBGA63, 9.50 X 12 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63

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0 STMICROELECTR

NAND02GW4B2D

 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

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NAND02GW4B2DN6E

 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

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NAND02GW4B2DN6F

 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

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18 NUMONYX

NAND02GW4B2DZA6E

 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

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