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NAND04GW3B2DN6E [NUMONYX]

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories; 4千兆, 8千兆, 2112字节/ 1056字的页面多平面架构, 1.8 V和3 V , NAND闪存
NAND04GW3B2DN6E
型号: NAND04GW3B2DN6E
厂家: NUMONYX B.V    NUMONYX B.V
描述:

4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
4千兆, 8千兆, 2112字节/ 1056字的页面多平面架构, 1.8 V和3 V , NAND闪存

闪存 内存集成电路 光电二极管
文件: 总69页 (文件大小:1707K)
中文:  中文翻译
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