1617-35_技术文档

NXP enables you to unleash the performance

of next-generation RF and microwave designs

NXP's RF Manual is one of the most important reference tools on the market for today’s

RF designers. It features our complete range of RF products, from low- to high-power signal

conditioning, organized by application and function, and with a focus on design-in support.

When it comes to RF, the first thing on the designer's mind is to meet the

specified performance. NXP brings clarity to every aspect of your design

challenge, so you can unleash the performance of your RF and microwave

designs. NXP delivers a portfolio of high-performance RF technology that

allows you to differentiate your product – no matter where in the RF world

you are. That’s why customers trust us with their mission-critical designs.

Whether it’s LDMOS and GaN for high-power RF applications or Si and

SiGe:C BiCMOS for your small-signal needs, we’ve got you covered.

Our broad portfolio of far-reaching technologies gives you the freedom

to design with confidence.

Shipping more than four billion RF products annually, NXP is a clear industry

leader in High Performance RF. From satellite receivers, cellular base

stations, and broadcast transmitters to ISM (industrial, scientific, medical)

and aerospace and defense applications, you will find the High Performance

RF products that will help you realize a clear advantage in your products,

your reputation, and your business.

So if you're looking to improve your RF performance, design a highly

efficient signal chain, or break new ground with an innovative ISM

application, NXP will help you unleash the performance of your

next-generation RF and microwave designs.

4

NXP Semiconductors RF Manual 16^thedition

What’s new?

This RF Manual provides updated information on RF applications that are

grouped as follows: wireless and broadband communication infrastructure, TV

and satellite, portable devices, automotive, ISM, and aerospace and defense.

We describe in detail the new developments in our core technologies, QUBiC4

(SiGe:C) and LDMOS. We have also added GaN technology to our product

offering; this key technology lets high-power amplifiers deliver very high

efficiency in next-generation wireless communication systems.

New products include GaN power amplifiers, a complete line of overmolded

plastic (OMP) RF power transistors and MMICs, and our eighth generation

LDMOS transistors (Gen8). Next-generation devices and improved products

include GPS LNAs, medium power amplifiers, IF gain blocks, satellite LNB ICs

and CATV modules.

Our portfolio for the wireless communication infrastructure has expanded, with

a comprehensive set of amplifiers (low noise, variable gain, medium power, and

high power Doherty amplifiers), mixers, IQ modulators and synthesizers, so you

can build a highly efficient signal chain for transmit line-ups and receive chains.

The Design Support section is updated and includes all available tools,

documents, materials and links that ease the design-in of our products.

We’re relentless in our commitment to RF innovation, and have the infrastructure and insight to inspire confidence

in your performance-critical applications. We bring focus to complex RF problems so you are free to push the

performance limits of your application, realize your design vision, and gain a competitive edge for your enterprise.

th

What you are reading is more than a guide, it's a tool that lets you unleash your RF performance: the 16 edition

of the RF Manual.

Kind regards,

John Croteau

Sr. Vice President & General Manager

Business Line High Performance RF

RF Manual web page

www.nxp.com/rfmanual

NXP Semiconductors RF Manual 16^thedition

5

Contents

1

Products by application

9

1.1 Wireless communication infrastructure_______________________________________________________________________________________________________________________________________________________________

9

1.1.1 Base stations (all cellular standards and frequencies) ______________________________________________________________________________________________________________________________

9

1.1.2 Point-to-point communications________________________________________________________________________________________________________________________________________________________________12

1.1.3 Repeater___________________________________________________________________________________________________________________________________________________________________________________________________14

1.2 Broadband communication infrastructure _________________________________________________________________________________________________________________________________________________________15

1.2.1 CATV optical (optical node with multiple out-ports)________________________________________________________________________________________________________________________________15

1.2.2 CATV electrical (line extenders) ______________________________________________________________________________________________________________________________________________________________16

1.3 TV and satellite____________________________________________________________________________________________________________________________________________________________________________________________________17

1.3.1 Network interface module (NIM) for TV reception___________________________________________________________________________________________________________________________________17

1.3.2 Basic TV tuner___________________________________________________________________________________________________________________________________________________________________________________________19

1.3.3 Satellite outdoor unit, twin low-noise block (LNB) with discrete components ______________________________________________________________________________________ 20

1.3.4 Satellite outdoor unit, twin low-noise block (LNB) with integrated mixer / oscillator / downconverter __________________________________________________21

1.3.5 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV________________________________________________________________________________________________________ 22

1.3.6 VSAT ________________________________________________________________________________________________________________________________________________________________________________________________________ 23

1.4 Portable devices_________________________________________________________________________________________________________________________________________________________________________________________________ 25

1.4.1 GPS__________________________________________________________________________________________________________________________________________________________________________________________________________ 25

1.4.2 FM radio ___________________________________________________________________________________________________________________________________________________________________________________________________26

1.4.3 China Mobile Multimedia Broadcasting (CMMB) in UHF band 470 – 862 MHz _______________________________________________________________________________________27

1.4.4 Cellular receiver________________________________________________________________________________________________________________________________________________________________________________________28

1.4.5 802.11n DBDC and 802.11ac WLAN ^{________________________________________________________________________________________________________________________________________________________}29

1.4.6 Generic RF front-end_______________________________________________________________________________________________________________________________________________________________________________ 30

1.5 Automotive__________________________________________________________________________________________________________________________________________________________________________________________________________31

1.5.1 SDARS & HD radio______________________________________________________________________________________________________________________________________________________________________________________31

1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission ___________________________________________________32

1.5.3 Tire pressure monitoring system_____________________________________________________________________________________________________________________________________________________________ 33

1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) _______________________________________________________________________________________________________________________ 34

1.6 Industrial, scientific & medical (ISM)__________________________________________________________________________________________________________________________________________________________________ 35

1.6.1 Broadcast / ISM _______________________________________________________________________________________________________________________________________________________________________________________ 35

1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee______________________________________________________________________________________________________________36

1.6.3 RF microwave furnace application____________________________________________________________________________________________________________________________________________________________37

1.6.4 RF plasma lighting___________________________________________________________________________________________________________________________________________________________________________________ 38

1.6.5 Medical imaging_______________________________________________________________________________________________________________________________________________________________________________________39

1.7

Aerospace and defense __________________________________________________________________________________________________________________________________________________________________________ 40

1.7.1 Microwave products for L- and S-band radar and avionics applications ________________________________________________________________________________________________ 40

2

Focus applications, products & technologies

42

2.1 Wireless communication infrastructure_____________________________________________________________________________________________________________________________________________________________ 42

2.1.1 Build a highly efficient signal chain with RF components for transmit line-ups and receive chains ________________________________________________________42

2.1.2 Digital wideband VGAs with high linearity & flexible current settings ___________________________________________________________________________________________________ 44

2.1.3 Doherty amplifier technology for state-of-the-art wireless infrastructure______________________________________________________________________________________________ 46

2.1.4 The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8 _____________________________________________________________________________ 48

2.2 Broadband communication infrastructure ________________________________________________________________________________________________________________________________________________________ 49

2.2.1 Connecting people, protecting your network: NXP's CATV C-family for the Chinese SARFT standard_________________________________________________49

2.2.2 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks ___________________________________________________________________________________52

2.3 TV and satellite___________________________________________________________________________________________________________________________________________________________________________________________________ 54

2. 3.1 LNAs with programmable gain & bypass option for improved tuner performance _______________________________________________________________________________ 54

2.3.2 Complete satellite portfolio for all LNB architectures_____________________________________________________________________________________________________________________________ 56

2.3.3 VSAT, 2-way communication via satellite_________________________________________________________________________________________________________________________________________________ 58

2.3.4 Low noise LO generators for microwave & mmWave radios___________________________________________________________________________________________________________________ 60

2.4 Portable devices__________________________________________________________________________________________________________________________________________________________________________________________________61

2. 4.1 The best reception of GNSS signals with the smallest footprint______________________________________________________________________________________________________________61

2.5 Industrial, scientific & medical___________________________________________________________________________________________________________________________________________________________________________ 63

2. 5.1 Medical applications driven by RF power________________________________________________________________________________________________________________________________________________ 63

2.5.2 RF-driven plasma lighting________________________________________________________________________________________________________________________________________________________________________ 64

2.5.3 QUBiC4 Si and SiGe:C transistors for any RF function____________________________________________________________________________________________________________________________ 65

2.5.4 Building on decades of innovation in microwave and radar ___________________________________________________________________________________________________________________ 66

2.5.5 Digital broadcasting at its best_______________________________________________________________________________________________________________________________________________________________ 68

2.5.6 Setting the benchmark for ultra low-power and high-performance wireless connectivity solutions ______________________________________________________69

2.6 Technology__________________________________________________________________________________________________________________________________________________________________________________________________________70

2. 6.1 The first mainstream semiconductor company to offer GaN products ___________________________________________________________________________________________________70

6

NXP Semiconductors RF Manual 16^thedition

2.6.2 Completing NXP's RF power transistor offering: products in plastic packages (OMP) ___________________________________________________________________________71

2.6.3 Looking for a leader in SiGe:C? You just found us! __________________________________________________________________________________________________________________________________72

2.6.4 High-performance, small-size packaging enabled by NXP's leadless package platform and WL-CSP technology________________________________74

3

Products by function

75

3.1 New products______________________________________________________________________________________________________________________________________________________________________________________________________75

3.2 RF diodes ____________________________________________________________________________________________________________________ 78

3.2.1 Varicap diodes _________________________________________________________________________________________________________________________________________________________________________________________78

3.2.2 PIN diodes _______________________________________________________________________________________________________________________________________________________________________________________________79

3.2.3 Band-switch diodes__________________________________________________________________________________________________________________________________________________________________________________81

3.2.4 Schottky diodes________________________________________________________________________________________________________________________________________________________________________________________81

3.3 RF Bipolar transistors ________________________________________________________________________________________________________________________________________________________________________________________ 82

3.3.1 Wideband transistors ______________________________________________________________________________________________________________________________________________________________________________ 82

3.4 RF ICs _________________________________________________________________________________________________________________________________________________________________________________________________________________ 85

3.4.1 RF MMIC amplifiers and mixers_______________________________________________________________________________________________________________________________________________________________ 85

3.4.2 Wireless infrastructures ICs_____________________________________________________________________________________________________________________________________________________________________ 88

3.4.3 Satellite LNB RF ICs_________________________________________________________________________________________________________________________________________________________________________________ 89

3.4.4 Low-noise LO generators for VSAT and general microwave applications ______________________________________________________________________________________________ 89

3.5 RF MOS transistors ____________________________________________________________________________________________________________________________________________________________________________________________ 90

3.5.1 JFETs _______________________________________________________________________________________________________________________________________________________________________________________________________ 90

3.5.2 MOSFETs __________________________________________________________________________________________________________________________________________________________________________________________________91

3.6 RF Modules ________________________________________________________________________________________________________________________________________________________________________________________________________ 93

3.6.1 CATV push-pulls ______________________________________________________________________________________________________________________________________________________________________________________93

3.6.2 CATV push-pulls 1 GHz ____________________________________________________________________________________________________________________________________________________________________________93

3.6.3 CATV power doublers ______________________________________________________________________________________________________________________________________________________________________________94

3.6.4 CATV optical receivers _____________________________________________________________________________________________________________________________________________________________________________94

3.6.5 CATV reverse hybrids_______________________________________________________________________________________________________________________________________________________________________________94

3.7 RF power transistors __________________________________________________________________________________________________________________________________________________________________________________________ 95

3.7.1 RF power transistors for base stations ____________________________________________________________________________________________________________________________________________________95

3.7.2 RF power transistors for broadcast / ISM applications____________________________________________________________________________________________________________________________ 99

3.7.3 RF power transistors for aerospace and defense__________________________________________________________________________________________________________________________________ 100

3.7.4 Gallium Nitride (GaN) RF power amplifiers____________________________________________________________________________________________________________________________________________101

3.8 Wireless microcontroller chipsets and modules ______________________________________________________________________________________________________________________________________________101

4

Design support

102

4.1 Knowing NXP’s RF portfolio_____________________________________________________________________________________________________________________________________________________________________________102

4.2 Product selection on NXP.com _________________________________________________________________________________________________________________________________________________________________________102

4.3 Product evaluation____________________________________________________________________________________________________________________________________________________________________________________________102

4.4 Additional design-in support____________________________________________________________________________________________________________________________________________________________________________103

4.5 Application notes______________________________________________________________________________________________________________________________________________________________________________________________103

4.6 Simulation models_____________________________________________________________________________________________________________________________________________________________________________________________104

4.6.1 Simulation models for RF power devices _______________________________________________________________________________________________________________________________________________104

4.6.2 Simulation models for RF bipolar wideband transistors_________________________________________________________________________________________________________________________105

4.6.3 Simulation models for RF MOSFET transistors_______________________________________________________________________________________________________________________________________106

4.6.4 Simulation models for RF varicap diodes_______________________________________________________________________________________________________________________________________________106

4.6.5 Simulation models for RF MMIC amplifiers____________________________________________________________________________________________________________________________________________107

5

Cross-references & replacements_______________________________________________________108

5.1 Cross-references: manufacturer types versus NXP types______________________________________________________________________________________________________________________________ 108

5.2 Cross-references: NXP discontinued types versus NXP replacement types__________________________________________________________________________________________________ 117

6

Packing quantities per package with relevant ordering code _____________________________119

6.1 Packing quantities per package with relevant ordering code_________________________________________________________________________________________________________________________ 119

6.2 Marking codes^{___________________________________________________________________________________________________________________________________________________________________________________________________}122

7

8

9

Abbreviations_________________________________________________________________________124

Contacts and web links ________________________________________________________________125

Product index_________________________________________________________________________126

NXP Semiconductors RF Manual 16^thedition

7

8

NXP Semiconductors RF Manual 16^thedition

1. Products by application

1.1 Wireless communication infrastructure

1.1.1 Base stations (all cellular standards and frequencies)

See also brochure: 'Your partner in Mobile Communication Infrastructure design', NXP document number 9397 750 16837.

Application diagram

IQ-Modulator

Power Amplifier

I

DVGA RF-BP

MPA

HPA

PLL

VCO

Dual

DAC

0

90

Transmitter

Mixer+LO

Q

IF-SAW

DVGA

Digital

Front

End

Tower -

Mounted

Amplifier

JEDEC

IF

Att.

ADC

TX / RX1

Tx

DPD

CFR

DUC

DDC

LO

LNA +VGA

RF-SAW

Rx

µC

RX2

Dual

DVGA

PLL

VCO

Dual

ADC

Dual

Mixer

BP or LP

IF-SAW

LNA

Filter Unit

LNA+VGA

Clock

Generator

Jitter Cleaner

Data Converter

RF Small Signal

RF Power

Micro Controller

The block diagram above shows transmit (upper part, Tx) and receive (lower part, Rx) functions of a base station, and includes the Tx feedback function (middle part, Tx feedback).

The signals generated in the "Digital Baseband & Control" block follow the requirements of the air-interface standard. These signals are interfaced to the DAC via

serial interface SER. The SER can use the LVDS or JEDEC standard. After the signals are fed to the I-DAC and Q-DAC, they are converted to the analog domain.

Before the I and Q signals enter the IQ modulator, they are first low-pass filtered to remove any aliasing signals. At the IQ modulator, the signals are up-converted to

RF using an LO signal coming from the PLL/VCO device, typically called the LO generator. Due to device aging and variation in cell load, the up-converted signals

are fed to the VGA to control the power level. An additional band-pass filter is needed to remove the out-of-band spurs. The clean signal is fed to the RF power

board, where the desired transmit power is made. Finally, the RF power signal is fed to the antenna via a duplexer.

Directly after the final-stage amplifier, a signal coupler picks up a certain amount of the RF signal, which is attenuated and then down-mixed using the IF mixer.

This signal is called the observation signal, and is used to derive coefficients for the digital pre-distortion algorithm. Since power levels vary, the observation is first

fed to the VGA to control the power level, and after band-pass filtering, the signal is converted to the digital domain using an ADC. The same serial interface is used

to send the digital signals to the baseband processor.

At the receiver, the received signal directly after the duplexer is fed to the LNA for direct amplification, since the received signal level is quite low. If the first LNA

is mounted in the tower top, a long RF cable is used to interface the RF signals with a base transceiver station (BTS). A second LNA is used to amplify the received

signals. Band-pass filtering is applied to reduce the out-of-band signals levels before these signals are applied to the IF mixer. Signal levels that change dramatically

require a VGA to maintain the full scale ranges of the I-ADC and Q-ADC for optimal conversion performance. Low-pass filtering is used before the ADC to remove

the aliasing signals. These digital signals are interfaced to the baseband using a serial interface such as JEDEC.

The sample clocks and LO signals are derived from clock cleaners and PLLs respectively. This is denoted as Clock and PLL / VCO in the block diagram. This set-up

is required to make a synchronized system. Typically denoted in SNRs, and in order to improve reception quality, the receive function is equipped with a second

receiver, called a diversity receiver.

NXP Semiconductors RF Manual 16^thedition

9

Recommended products

Function

Product

f_min(MHz)

f_max(MHz)

P1dB (W)

Matching

Package

Type

Driver

Driver/final

MMIC

700

2110

2500

2000

700

2200

2170

2700

2200

1000

960

10

-

SOT1179

SOT1121

SOT1212

SOT467

BLP7G22-10*

40

I/O

-

BLF6G22L(S)-40P

BLF6G27L(S)-40P

BLM7G22S-60PB(G)*

BLF6H10L(S)-160

40

60

160

200

270

300

140

160

250

260

250

160

200

270

100

140

100

50

700

I/O

O

SOT1244C BLF8G10LS-200GV

SOT1244C BLF8G10LS-270GV

700

850

SOT539

SOT1224

SOT502

SOT539B

SOT539

SOT502B

BLF8G10L(S)-300P*

BLP7G09S-140P(G)*

BLF8G10L(S)-160*

BLF7G10L(S)-250

BLF7G20LS-260A*

BLF7G20L(S)-250P

BLF7G22L(S)-160*

900

1000

960

920

I/O

O

HPA

920

960

Final

1800

1805

2000

2500

3400

2010

1900

1880

2200

2700

3600

2025

SOT1244C BLF8G22LS-200GV*

SOT1244C BLF8G22LS-270GV*

SOT502

SOT1130

BLF7G27L(S)-100

BLF7G27L(S)-140

BLF6G38(LS)-100

BLD6G21L(S)-50

Integrated Doherty

* Check status in section 3.1, as this type is not yet released for mass production

Product highlight:

BLF8G10LS-160

Features

` Excellent ruggedness

` High efficiency

` Low R_thproviding excellent thermal stability

` Designed for broadband operation (920 to 960 MHz)

` Lower output capacitance for improved performance in Doherty

applications

160 W LDMOS power transistor for base W-CDMA base station and

multi-carrier applications at frequencies from 920 to 960 MHz.

` Low memory effects for excellent pre-distortability

` Internally matched for ease of use

` Integrated ESD protection

` Compliant to Restriction of Hazardous Substances (RoHS) Directive

2002/95/EC

10

NXP Semiconductors RF Manual 16^thedition

Function

Product

Package

SOT753

Various

Type

BAP64Q

BAP70Q

BAP64^

Discrete

attenuator

RF diode

PIN diode

Function

Product

Package

Type

BFU725F/N1

BFU690F

BFU730F

BFU760F

BFU790F

BGU7051

BGU7052

BGU7053

BGU7060

BGU7061

BGU7062

BGU7063

RF transistor

SiGe:C transistor

SiGe:C MMIC

SOT343F

LNA (low noise

amplifier)

SOT650

MMIC

SOT1301

Function

Product

Gain range

Package

Type

Single VGA

(variable-gain

amplifier)

BGA7210

MMIC

31 dB

SOT617

BGA7204

Function

Product

Gain range

Package

Type

Dual VGA

(variable-gain

amplifier)

24 dB

BGA7350

MMIC

SOT617

28 dB

BGA7351

Function

Product

P_L(1dB) @ 940 MHz

24 dBm

Package

Type

BGA7024

BGA7027

BGA7124

BGA7127

BGA7130

MPA

(medium

power

SOT89

28 dBm

25 dBm

28 dBm

30 dBm

MMIC

SOT908

amplifier)

Function

Product

Frequency

0.7 - 1.2 GHz

1.7 -2.7 GHz

Package

Type

BGX7220

BGX7221

Dual mixer

MMIC

SOT1092

Function

Product

Noise

Package

Type

PLL + VCO

(LO generator)

131 dBc/Hz @ 1 MHz

offset @ 5.3 GHz

MMIC

SOT617

BGX7300*

Function

Product

Output power

0 dBm

Package

Type

BGX7100

BGX7101

IQ modulator

MMIC

SOT616

4 dBm

* Check status in section 3.1, as this type is not yet released for mass production

for mass production

^ SOD523, SOD323, SOT23 & SOT323

Product highlight:

Features

` Internally matched for 50 Ω

Digital VGAs BGA7204 & BGA7210

- BGA7204 = 0.4 to 2.75 GHz

- BGA7210 = 0.7 to 3.8 GHz

These 6-bit digital VGAs offer high linearity (35 dBm @ 2.2-2.8 GHz)

and high output power (23 dBm @ 2.2-2.8 GHz) across a large

bandwidth without external matching. Smart routing with no

connection crosses simplifies design and decreases footprint by 25%.

The unique power-save mode can effectively reduce the current

consumption in TDD systems up to 45%. The BGA7210 adds flexible

current distribution across its two amplifiers, depending on the

attenuation state, to save current.

` High maximum power gain

- BGA7204 = 18.5 dB

- BGA7210 = 30 dB

` High output third-order intercept, IP3_O

- BGA7204 = 38 dB

- BGA7210 = 39 dB

` Attenuation range of 31.5 dB, 0.5 dB step size (6 bit)

` Fast switching power-save mode (power-down pin)

` Digitally controlled current setting from 120 to 195 mA with an

optimum at 185mA (BGA7210 only)

` Simple control interfaces (SPI)

` ESD protection on all pins (HBM 4 kV; CDM 2 kV)

NXP Semiconductors RF Manual 16^thedition

11

1.1.2 Point-to-point communications

Application diagram

INDOOR UNIT

POWER

OUTDOOR UNIT

SUPPLY

VGA

MPA

IF

VGA

MPA

PA

0

PLL VCO

90

BPF

BUF

to/from

IDU

DIGITAL

SIGNAL

PROCESSOR

REF

MPX

SYNTH

PLL

ANTENNA

PMU

VGA LNA

IF

LNA LNA

0

ANALOG

VGA

PLL VCO

LPF

90

VGA

DATA

INTERFACE

brb406

Recommended products

Indoor unit

Function

Product

Gain range

Package

Type

Function

Product

Package

Type

Single VGA

(variable-gain

amplifier)

BGA2800

BGA2801

BGA2815

BGA2816

BGM1012

BGA2714

BGA2748

BGA2771

23 dB

BGA7202

BGA7204

MMIC

SOT617

IF gain block

MMIC

31 dB

IF

SOT363

Function

Product

Gain range

Package

Type

General-

purpose

wideband

amplifiers

Dual VGA

(variable-gain

amplifier)

24 dB

BGA7350

MMIC

SOT617

28 dB

BGA7351

Function

Product

Package

SOT891

Type

P_L(1dB) @

940 MHz

24 dBm

28 dBm

25 dBm

28 dBm

30 dBm

Function

Product

Package

Type

BGU7003

BGU7051

BGU7052

BGU7053

BGU7060

BGU7061

BGU7062

BGU7063

BFU725F/N1

BFU710F

BFU730F

BFG425W

BFG424W

BFG325/XR

BGA7024

BGA7027

BGA7124

BGA7127

BGA7130

SOT89

MPA

(medium

power

SOT650

SiGe:C

MMIC

RF MMIC

SOT908

amplifier)

SOT1301

SOT343F

LNA

Output

power

0 dBm

4 dBm

Function

Product

Package

Type

SiGe:C

transistor

BGX7100

BGX7101

IQ

MMIC

SOT616

modulator

RF transistor

SOT343R

SOT143R

Wideband

transistor

12

NXP Semiconductors RF Manual 16^thedition

Outdoor unit

Function

Product

Gain range

Package

Type

Function

Product

Gain range

Package

Type

Single VGA

(variable-

gain

Dual VGA

(variable-

gain

BGA7210

24 dB

BGA7350

MMIC

31 dB

SOT617

MMIC

SOT617

BGA7204

28 dB

BGA7351

amplifier)

P_L(1dB)

@ 940 MHz

24 dBm

28 dBm

25 dBm

28 dBm

30 dBm

Function

Product

Noise

Package

Type

Function

Product

Package

Type

PLL + VCO

(LO

generator)

-131 dBc/Hz @

1 MHz offset

@ 5.3 GHz

BGA7024

BGA7027

BGA7124

BGA7127

BGA7130

MMIC

SOT617

BGX7300*

MPA

(medium

power

SOT89

MMIC

SOT908

amplifier)

Function

Product

Package

Type

BFG424W

BFG425W

BFU725F/N1

BFU730F

BFU760F

BFU790F

Wideband

transistor

SOT343R

Function

Product

Package

Type

BFU725F/N1

BFU730F

BFU760F

BFU790F

Oscillator

RF transistor

SiGe:C

transistor

SiGe:C

transistor

SOT343F

Buffer

RF transistor

SOT343F

* Check status in section 3.1, as this type is not yet released for mass

production

Function

Product

Package

Type

BFU725F/N1

BFU730F

BFU760F

BFU790F

SiGe:C

transistor

LNA

RF transistor

SOT343F

NXP BTS Tx component demonstrator board

Function

Product

Package

Type

BGA2800

BGA2801

BGA2815

BGA2816

BGA2850

BGA2865

BGA2866

BGM1014

BGM1013

BGM1012

BGA2714

IF gain block

MMIC

IF

SOT363

General-

purpose

wideband

amplifiers

MMIC

Product highlight:

BGA7350 MMIC variable-gain amplifier

Features

` Dual independent digitally controlled 24 dB gain range VGAs,

with 5-bit control interface

` 50 to 250 MHz frequency operating range

` Gain step size: 1 dB 0.1 dB

The BGA7350 MMIC is a dual independent digitally controlled IF

variable-gain amplifier (VGA) operating from 50 to 250 MHz. Each IF

VGA amplifies with a gain range of 24 dB and, at its maximum gain

setting, delivers 17 dBm output power at 1 dB gain compression

with superior linear performance. The BGA7350 is optimized for a

differential gain error of less than 0.1 dB for accurate gain control

and has a total integrated gain error of less than 0.4 dB. It is housed

in a 32-pin leadless HVQFN package (5 x 5 mm).

` 18.5 dB power gain

` Fast gain stage switching capability

` 17 dBm output power at 1 dB gain compression

` 5 V single supply operation with power-down control

` Logic-level shutdown control pin reduces supply current

` ESD protection at all pins

` Unconditionally stable

NXP Semiconductors RF Manual 16^thedition

13

1.1.3 Repeater

Application diagram

Dual mixer

mixer

Dual DAC

Dual ADC

ADC

Dual VGA

VGA

Dual mixer

mixer

LNA

Tx0

Rx0

Rx1

PA

LPF

RF SAW

I-DAC

DDC/

DUC

Filtering

Tx1

VGA

LNA

Q-DAC

ADC

mixer

PLL

VCO

Clock

LO Signal

Recovery

jitter

cleaner

brb631

Recommended products

Function Product

Driver

f_min(MHz) f_max(MHz)

P1dB (W)

Matching Package

Type

700

2300

700

2200

2700

1000

1550

2000

2170

2700

3800

2025

2170

10

45

40

45

40

50

-

SOT1179

SOT975

SOT608

SOT1135

SOT608

SOT1121

SOT502

SOT1130

BLP7G22-10*

I

BLF6G27-10(G)

BLF6G10(S)-45

BLF6G15L(S)-40RN

BLF6G20(S)-45

BLF6G22L(S)-40P

BLF6G27L(S)-40P

BLF6G38(LS)-50

BLD6G21L(S)-50

BLD6G22L(S)-50

1450

1800

2110

2500

3400

2010

2110

I/O

O

HPA

Driver/final

Integrated Doherty

I/O

Function

Product

P_{L (1 dB)}@ 940 MHz

24 dBm

28 dBm

25 dBm

28 dBm

Package

Type

BGA7024

BGA7027

BGA7124

BGA7127

BGA7130

SOT89

MPA

MMIC

(medium power amplifier)

SOT908

30 dBm

Function

Product

MMIC

Gain range

24 dB

Package

Type

BGA7350

BGA7351

Dual VGA

(variable-gain amplifier)

SOT617

28 dB

Function

Product

MMIC

Frequency range

1.7 - 2.7 GHz

0.7 - 1.2 GHz

Package

Type

BGX7220

BGX7221

Dual mixer

SOT1092

Function

Product

Package

Type

BGU7051

BGU7052

BGU7053

BGU7060

BGU7061

BGU7062

BGU7063

SOT650

LNA

SiGe:C MMIC

SOT1301

Function

Product

MMIC

Noise

Package

Type

PLL + VCO

(LO generator)

-131 dBc/Hz @ 1 MHz

offset @ 5.3 GHz

SOT617

BGX7300*

* Check status in section 3.1, as this type is not yet released for mass production

Product highlight:

BGX7221 MMIC dual down-mixer

Features

` 8.5 dB conversion gain over all bands

` 13 dBm input, 1 dB compression point

` 25.5 dBm input third-order intercept point

` 10 dB (typ) small signal noise figure

` Integrated active biasing

The BGX7221 combines a pair of high performance, high linearity

down-mixers for use in receivers that have a common local oscillator

used with, for example, main and diversity paths. The device covers

frequency bands from 1700 to 2700 MHz with an extremely flat

` Single +5 V supply operation

` Power-down per mixer with hardware control pins

` Low bias current in power-down mode

` Matched 50 Ω single-ended RF and LO input impedances

` ESD protection at all pins

behavior.

14

NXP Semiconductors RF Manual 16^thedition

1.2 Broadband communication infrastructure

1.2.1 CATV optical (optical node with multiple out-ports)

Application diagram

duplex

RF power

amplifier

filter

coax out

port 1

RF forward

receiver

splitter

coax out

port 2

RF pre-

amplifier

fiber in

coax out

port 3

coax out

port 4

bra852

Recommended products

Function

Product

Frequency

Package

SOT115

Type

BGO807C

BGO807CE

RF forward

receiver

Forward

path receiver

870 MHz

Function

Product

Power doubler

Frequency

870 MHz

Gain (dB)

18.2 - 18.8

18 - 19

21 - 22

23 - 24.5

27 - 28.5

Type

BGD812

BGY885A

BGY887

CGY1043

CGY1047

870 MHz

1 GHz

RF

pre-amplifier

Push-pulls

Function

Product

Frequency

Gain (dB)

22 - 24

24 - 26

22 - 23.5

26.5 - 28

Type

CGD942C

CGD944C

CGD1042Hi

CGD1046Hi

870 MHz

RF power

amplifier

Power

doublers

1 GHz

Product highlight:

BGO807CE optical receiver

Features

` Excellent linearity

` Low noise

` Excellent flatness

` Standard CATV outline

` Rugged construction

` Gold metallization ensures excellent reliability

` High optical input power range

The BGO807CE is an integrated optical receiver module that

provides high output levels and includes an integrated temperature-

compensated circuitry. In your optical node design, BGO807CE

enables a high performance/ price ratio and ruggedness. When

upgrading an HFC network from analog to digital, our BGO807CE

is the perfect fit.

NXP Semiconductors RF Manual 16^thedition

15

1.2.2 CATV electrical (line extenders)

Application diagram

duplex

filter

RF pre-

RF power

amplifier

duplex

filter

amplifier

coax in

coax out

RF reverse

amplifier

bra505

Recommended products

Function

Product

Frequency

550 MHz

Gain (dB)

Type

Function

Product

Frequency

Gain (dB)

18.2 - 18.8

20 - 20.6

18.2 - 18.8

19.7 - 20.3

22 - 23

24 - 26

22 - 24

24 - 26

19.5 - 22

22 - 23.5

23.5 - 25.5

26 - 28

22 - 24

23.5 - 25.5

26 - 28

Type

BGD712

BGD712C

BGD714

BGD812

33.5 - 35.5

33.2 - 35.2

18 - 19

21 - 22

18 - 19

BGY588C

BGE788C

BGY785A

BGY787

BGY885A

BGY887

750 MHz

870 MHz

BGD814

870 MHz

21 - 22

CGD942C

CGD944C

CGD1042H

CGD1044H

CGD1040Hi

CGD1042Hi

CGD1044Hi

CGD1046Hi

CGD982HCi

CGD985HCi

CGD987HCi

RF

33.5 - 34.5

34.5 - 36.5

18 - 19

21 - 22.5

23 - 24.5

27 - 28.5

29 - 31

BGY888

Push-pulls

pre-amplifier

CGY888C

BGY1085A

CGY1041

CGY1043

CGY1047

CGY1049

CGY1032

RF power

amplifier

Power

doublers

1003 MHz

32 - 34

Function

Product

Frequency

5-75 MHz

5-120 MHz

5-200 MHz

Gain (dB)

29.2 - 30.8

24.5 - 25.5

23.5 - 24.5

Type

BGY68

BGY66B

BGY67A

RF reverse

amplifier

Reverse

hybrids

All available in SOT115 package

Product highlight:

CGD1046Hi

Features

` High output power

` High power gain for power doublers

` Extremely low noise

` Dark Green products

` GaAs HFET dies for high-end applications

` Rugged construction

` Superior levels of ESD protection

` Integrated ringwave protection

Capable of supporting high output power, the CGD1046Hi is

primarily designed for use in fiber deep-optical-node applications

(N+1/2/3). This 1 GHz hybrid amplifier solution offers an extended

temperature range, high-power overstress capabilities in case of

surges, and high ESD levels. The result is a low cost of ownership,

with durability and superior ruggedness.

` Design optimized for digital channel loading

` Temperature-compensated gain response

` Optimized heat management

` Excellent temperature resistance

16

NXP Semiconductors RF Manual 16^thedition

Looking for more information on our wideband LNAs supporting multi-tuner applications in TVs, DVR/PVRs, and STBs?

See section 2.3.1 LNAs with programmable gain & bypass option for improved tuner performance.

1.3 TV and satellite

1.3.1 Network interface module (NIM) for TV reception

Application diagram

CONVENTIONAL

TUNER OR

VGA

SILICON TUNER

surge

RF input

RF SW

WB LNA

RF output

brb403

Recommended products

Function

Product

V_cc(V)

Gain (db)

Package

Type

5

10

SOT363

BGU7031

BGU7032

BGU7033

BGU7041

BGU7042

BGU7044

BGU7045

10

-2

5

SOT363

10

5

-2

LNA

MMIC

3.3

10

-2

14

-2

Product highlight:

and remodulators. The active splitter requires an LNA with excellent

linearity. NXP has developed two new series of LNA/VGA MMICs

(BGU703x/BGU704x), designed especially for high linearity (P3O

of 29 dBm) in low-noise applications such as an active splitter in a

NIM tuner. The BGU703x family operates at a supply voltage of 5 V

and is intended for use with normal can tuners. The BGU704x family

operates at 3.3 V and works seamlessly with our Si tuner ICs, which

also operate at 3.3 V.

Make a high-performance active splitter in a NIM tuner

with the BGU703x/ BGU704x

Today's TV tuners require complicated signal handling and benefit

from flexibility in design. The front-end of a TV signal receiver is

no longer just a tuned receiver, but has evolved into an RF network

interface module (NIM) with tuned demodulators, active splitters,

NXP Semiconductors RF Manual 16^thedition

17

Recommended products

Function

Product

Package

SOT23

Type

BF1107

SOT143B

SOT143R

SOT343

SOT343R

SOT143B

SOT143R

SOT343

SOT343R

BF1108

5 V silicon RF

switch

BF1108R

BF1108W

BF1108WR

BF1118

BF1118R

BF1118W

BF1118WR

RF Switch /

PLT switch

MOSFET

3.3 V silicon

RF switch

Function

Product

Package

Type

2-in-1 with

band switch

@ 5 V

SOT363

BF1215

AGC control

amplifier

MOSFET

2-in-1 @ 5 V

5 V

SOT363

SOT343

BF1216

BF1217

Note: given that there is now an LNA before the MOSFET, the gain of these

MOSFETs is made slightly lower and the cross-modulation somewhat higher.

That way, the MOSFET is not under AGC even under nominal RF input level.

BGU703x evaluation board

Product highlight:

to the recording device is on, the BF11x8 is open, so the RF signal

travels via the recording device to the TV tuner. When power to the

recording device is off, the BF11x8 closes. This ensures that the RF

signal is looped through directly to the TV tuner and guarantees TV

reception. This saves energy because the recording device can be

powered off.

Save energy with the BF11x8

The BF11x8 series are small-signal, RF-switching MOSFETs that can

be used to switch RF signals up to 1 GHz. Using the BF11x8 series

as an RF switch saves a considerable amount of energy. When a

recording device (DVD-R, HDD-R, VCR, DVR) is powered off, viewers

can still watch TV, although the antenna is looped via the recording

device. Without the BF11x8, the antenna signal is lost. When power

18

NXP Semiconductors RF Manual 16^thedition

1.3.2 Basic TV tuner

Application diagram

MOSFET

MOPLL

IC

RF input

From antenna,

cable, active splitter,

etc.

IF

V

AGC

bra500

Recommended products

Function

Product

Package

SOD323

SOD523

SOD323

SOD523

SOD882D

SOD323

SOD882D

SOD523

Type

BB152

BB182

BB153

BB178

BB187

BB178LX

BB187LX

BB149A

BB179LX

BB179

Function

Product

Bandswitch diode

Package

SOD523

Type

BA277

BA891

BA591

VHF low

Bandswitching

VHF high

Function

Product

Package

SOD323

SOD523

SOD323

SOD882D

SOD523

SOD882D

SOD523

SOD323

SOD882D

SOD523

Type

BB152

BB182

BB153

BB178LX

BB178

BB187LX

BB187

BB149A

BB179LX

BB179

Varicap

diode

Input filter

VHF low

UHF

VHF high

UHF

Varicap

diode

BB189

Bandpass filter

Function

Product

Package

SOT143

SOT363

SOT666

SOT363

Type

BF1201

BF1202

BF1105

BF1211

BF1212

BF1102R

BF1203

BF1204

BF1206

BF1207

BF1208

BF1208D

BF1210

BF1214

BF1218

5 V

BB189

Function

Product

Package

SOD323

SOD523

SOD323

SOD882D

SOD523

SOD882D

SOD523

SOD323

SOD882D

SOD523

Type

BB152

BB182

BB153

BB178LX

BB178

BB187LX

BB187

BB149A

BB179LX

BB179

VHF low

RF

MOSFET

pre-amplifier

VHF high

2-in-1 @ 5 V

Varicap

diode

Oscillator

UHF

V

BB189

Function

Product

Package

Type

2-in-1 with

band switch SOT363

@ 5 V

BF1215

RF

MOSFET

2-in-1 @ 5 V SOT363

BF1216

BF1217

pre-amplifier

5 V

SOT343

Product highlight:

Features

` Internally biased

BGU7045 1 GHz wideband low-noise amplifier

with bypass

` Noise figure of 2.8 dB

` High linearity with an IP3 of 29 dBm

` 75 Ω input and output im^Opedance

` Power-down during bypass mode

The BGU7045 MMIC is a 3.3 V wideband amplifier with bypass mode.

It is designed specifically for high-linearity, low-noise applications

over a frequency range of 40 MHz to 1 GHz. It is especially suited

to set-top box applications. The LNA is housed in a 6-pin SOT363

plastic SMD package.

` Bypass mode current consumption < 5 mA

` ESD protection > 2 kV HBM and >1.5 kV CDM on all pins

NXP Semiconductors RF Manual 16^thedition

19

1.3.3 Satellite outdoor unit, twin low-noise block (LNB) with discrete components

Looking for fully integrated mixer/oscillator/downconverter for universal single LNB?

See section 2.3.2 Complete satellite portfolio for all LNB architectures

Application diagram

horizontal

antenna

1^st

2^nd

3^rd

stage

LNA

stage

LNA

stage

LNA

mixer

H low

IF amplifier

low

oscillator

IF out 1

IF

mixer

V low

amplifier

(4 x 2)

IF

IF amplifier

H high

BIAS IC

SWITCH

mixer

IF amplifier

vertical

antenna

high

oscillator

IF out 2

IF

V high

amplifier

brb022

IF amplifier

1^st

2^nd

3^rd

stage

LNA

stage

LNA

stage

LNA

Recommended products

Function

Product

Package

Type

BFU710F

BFU730F

2^nd& 3^rd

SiGe:C

transistor

RF transistor

SOT343F

stage LNA

Function

Product

RF bipolar

transistor

Package

SOT343

SOT343F

Type

BFG424W

BFG424F

BFU660F

BFU710F

BFU730F

Wideband

transistor

Oscillator

SiGe:C

transistor

RF transistor

SOT343F

Function

Product

Package

Various

Type

Function

Product

Package

SOT363

Type

BAP64^

BAP51^

BAP1321^

BAP50^

BAP63^

BGA2800

BGA2801

BGA2815

BGA2816

BGA2818

BGA2850

BGA2865

BGA2866

BGA2867

BGA2870

BGA2874

BGM1014

IF switch

RF diode

PIN diode

Output

stage IF

amplifier

MMIC

IF gain block

Function

Product

Package

SOT363

SOT343

SOT343F

Type

BGA2800

BGA2801

BGA2802

BGA2803

BGA2815

BGA2816

BGA2817

BGA2818

BGA2850

BGA2851

BGA2866

BFG424W

BFG424F

1^ststage

IF

amplifier

MMIC

IF gain block

RF bipolar

transistor

Wideband

transistor

SOT343

BFG325

BFU710F

BFU730F

2^ndstage LNA RF transistor

SiGe:C

SOT343F

Function

Product

Package

Type

BFU710F

BFU730F

SiGe:C

transistor

RF bipolar

transistor

Wideband

transistor

Mixer

RF transistor

SOT343F

^ Also available in ultra-small leadless package SOD882D

Product highlight:

Features

` No output inductor necessary when used at the output stage

` Internally matched to 50 Ω

BGA28xx-family of IF gain blocks

` Reverse isolation > 30 dB up to 2 GHz

` Good linearity with low second- and third-order products

` Unconditionally stable (K > 1)

The BGA28xx IF gain blocks are silicon Monolitic Microwave

Integrated Circuit (MMIC) wideband amplifiers with internal

matching circuitry in a 6-pin SOT363 plastic SMD package.

20

NXP Semiconductors RF Manual 16^thedition

1.3.4 Satellite outdoor unit, twin low-noise block (LNB) with integrated mixer / oscillator / downconverter

Application diagram

LNA3

TFF1014

SWITCHED TO

LOW-BAND

IF out 1

LNA1

LNA2

BPF

H

LNA3

shared

crystal

LNA1

LNA2

TFF1014

SWITCHED TO

HIGH-BAND

IF out 2

V

BPF

22 kHz

TONE

DETECT

3

H/V

DETECT

aaa-002896

Recommended products

Function

Product

Package

Type

BFU710F

BFU730F

2^nd& 3^rd

SiGe:C

transistor

RF transistor

SOT343F

stage LNA

Function

Product

Package

Type

Mixer/

oscillator/

RF IC

SOT763

TFF1014HN

downconverter

Product highlight:

Features

` Ultra-low current consumption (I_CC= 52 mA)

` Low phase noise (1.5° RMS typ)

` Integration bandwidth from 10 kHz to 13 MHz

` Small PCB footprint

Industry’s lowest-power integrated Ku-band downconverters

These Universal DVB-S compliant Ku-band downconverters consume

about 50% less current (52 mA) than other integrated solutions.

They are fully integrated (PLL synthesizer/mixer/IF gain block) and RF

tested – which results in significantly decreased manufacturing time.

Stability of the local oscillator is guaranteed, which improves overall

system reliability over temperature and time, and eliminates the need

for manual alignment in production.

- DHVQFN16 package (2.5 x 3.5 x 0.85 mm)

- Only 7 external components

- No inductors necessary

NXP Semiconductors RF Manual 16^thedition

21

1.3.5 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV

Application diagram

terrestrial

input

amplifier

terrestrial

input

amplifiers

LNB

output

amplifiers

coax out to STB

SWITCH MATRIX

FOR 4 × 4,

NEEDS 16

(SINGLE) PIN

DIODES

coax out to STB

brb023

Recommended products

Function

Product

Package

Type

BGA6289

BGA6489

BGA6589

BGA7024

BGA7124

General

Input

amplifier

terrestrial

purpose

medium

power

SOT89

MMIC

amplifier

SOT908

Function

Product

Package

SOT363

SOT343

SOT143

Type

BGA2771

BGA2866

BGA2867

BGA2818

BFG325

BFG425W

BFG520

BFG540

BFU660F

General

purpose

amplifier

MMIC

Input

amplifier

LNB

Wideband

transistor

Function

Product

Package

Type

RF bipolar

transistor

BGA6289

BGA6489

BGA6589

BGA7024

BGA7124

General

purpose

medium

power

SiGe:C

transistor

SOT89

SOT343F

BFU725F/N1

BFU730F

MMIC

amplifier

SOT908

SOT363

Function

Product

Package

Type

General

purpose

amplifier

BGM1011

BGA2869

BAP50^

BAP51^

BAP63^

BAP64^

BAP70^

BAP1321^

BFU725F/N1

BFU730F

Output

amplifier

SOT363

SOT223

SOT143

BFG135

BFG 591

BFG198

BFG540

BFU725F/N1

BFU730F

RF diode

PIN diode

Various

Wideband

transistor

Switch

matrix

RF bipolar

transistor

SiGe:C

transistor

SiGe:C

transistor

SOT343F

RF transistor

SOT343F

^ Also available in ultra-small leadless package SOD882D

Product highlight:

Features

` High isolation, low distortion, low insertion loss

` Low forward resistance (Rd) and diode capacitance (Cd)

` Ultra-small package options

PIN diodes for switching matrix

In addition to delivering outstanding RF performance, this component

simplifies design-in because of its extremely low forward resistance,

diode capacitance, and series inductance. Significant board space

is saved by supplying a range of highly compact package options,

including SOD523, SOD323 and leadless SOD882D.

22

NXP Semiconductors RF Manual 16^thedition

1.3.6 VSAT

Application diagram

INDOOR UNIT

OUTDOOR UNIT

IF

IF1

PA

POWER

SUPPLY

MOD

BUF

SYNTH

PLL

to/from

IDU

DIGITAL

SIGNAL

REF

MPX

OMT

ANTENNA

PROCESSOR

´ N

PMU

LNA

PMU

IF2

BUF

IF1

LNA2

LNA1

DATA

DEMOD

INTERFACE

brb405

Recommended products

Indoor unit

Function

Product

Package

Type

BGA2714

BGA2748

BGA2771

BGA2800

BGA2801

BGA2815

BGA2816

BGM1012

IF

MMIC

IF gain block

SOT363

Function

Product

Package

Type

BFU725F/N1

BFU710F

BFU725F/N1

BFU730F

SiGe:C transistor

SOT343F

LNA

RF transistor

BFG425W

BFG424W

BFG325/XR

SOT343R

SOT143R

Wideband

transistor

Product highlight:

Features

` Phase noise compliant with IESS-308 (Intelsat)

` LO generator with VCO range: 12.8 to 13.05 GHz

` Input signal 50 to 816 MHz

TFF1003HN Low phase noise LO generator for VSAT

applications

` Divider settings: 16, 32, 64, 128, or 256

` Output level −5 dBm; stability 2 dB

` Third- or fourth-order

The TFF1003HN is a Ku-band frequency generator intended for

low phase noise local-oscillator (LO) circuits for Ku-band VSAT

transmitters and transceivers. The specified phase noise complies

with IESS-308 from Intelsat.

` Internally stabilized voltage references for loop filter

NXP Semiconductors RF Manual 16^thedition

23

Recommended products

Outdoor unit

Function

Product

Package

Type

BGA2800

BGA2801

BGA2815

BGA2816

BGA2850

BGA2865

BGA2866

BGM1014

BGM1013

BGM1012

BGA2714

IF

MMIC

IF gain block

SOT363

Function

Product

Package

Type

BFU610F

BFU630F

BFU660F

BFU690F

BFU710F

BFU725F/N1

BFU730F

BFU760F

BFU790F

BGU7003

RF transistor

SiGe:C transistor

SOT343F

LNA2

MMIC

SiGe:C MMIC

SiGe:C IC

SOT891

Function

Product

RF IC

Package

Type

TFF1003HN

TFF1007HN

TFF11xxxHN^

PLL

SOT616

Function

Product

Package

Type

BFG424W

BFG425W

BFU610F

BFU630F

BFU660F

BFU690F

BFU710F

BFU725F/N1

BFU730F

BFU760F

BFU790F

Wideband

transistor

SOT343R

Oscillator

RF transistor

SiGe:C transistor

SOT343F

Function

Synth

Product

RF diode

Package

SOD523

Type

BB202

Varicap diode

Function

Product

Package

Type

BFU610F

BFU630F

BFU660F

BFU690F

BFU710F

BFU725F/N1

BFU730F

BFU760F

BFU790F

Buffer

RF transistor

SiGe:C transistor

SOT343F

^ 17 different types with LO ranges: 7-15 GHz, see 3.4.4

Product highlight:

Features

` Divider settings: 64

TFF1007HN Low phase noise LO generator

for VSAT applications

` Input signal 230.46 to 234.38 MHz

` Internally stabalized voltage references for loop filter and output

power level

The TFF1007HN is a Ku-band frequency generator intended for

low phase noise local-oscillator (LO) circuits for Ku-band VSAT

transmitters and transceivers. The specified phase noise complies

with IESS-308 from Intelsat.

` LO generator with VCO range: 14.75 to 15 GHz

` Output level -4 dBm minimum

` Phase noise compliant with IESS-308 (Intelsat)

` Third- or fourth-order PLL

24

NXP Semiconductors RF Manual 16^thedition

1.4 Portable devices

1.4.1 GPS

Application diagram

external

active

antenna

LNA

BPF

SPDT

embedded

antenna

LNA

BPF

GPS

RECEIVER

IC

001aan955

Recommended products

Function

Product

Package

Type

BAP64^

BAP1321^

BAP51^

SPDT switch

RF diode

PIN diode

Various

Function

Product

Package

SOT343F

SOT891

Type

BFU725F /N1

BFU710F

BFU730F

BGU7003

BGU7003W

BGU7004

BGU7005

BGU7007

BGU7008

BGU8007

BGU8006

SiGe:C

transistor

RF transistor

LNA

SiGe:C

MMIC

SOT886

WL-CSP

^ Also available in ultra-small leadless package SOD882D

Product highlight:

Features

` Covers full GNSS L1 band, from 1559 to 1610 MHz

` Noise figure (NF) = 0.75 dB

BGU8007 SiGe:C LNA MMIC for GPS, GLONASS,

and Galileo

` Gain = 19.5 dB

` High 1 dB compression point of -12 dBm

` High out-of-band IP3_iof 4 dBm

The BGU8007 is a low-noise amplifier (LNA) for GNSS receiver

applications in a plastic leadless 6-pin extremely-small SOT886

package. It requires only one external matching inductor and one

external decoupling capacitor.

` Supply voltage 1.5 to 2.85 V

` Power-down mode current consumption < 1 µA

` Optimized performance at low supply current of 4.8 mA

` Integrated temperature stabilized bias for easy design

` Requires only one input matching inductor and one supply

decoupling capacitor

NXP Semiconductors RF Manual 16^thedition

25

1.4.2 FM radio

Application diagram

headset

antenna

LNA

SPDT

embedded

antenna

LNA

FM

RECEIVER

IC

001aan956

Recommended products

Function

Product

Package

Type

BAP64^

BAP 65^

BAP1321^

BAP51^

SPDT switch

RF diode

PIN diode

Various

Function

Product

Package

Type

SiGe:C

transistor

RF transistor

SOT343F

BFU725F /N1

BGU6101

BGU6102

BGU6104

BGU7003

BGU7003W

LNA

SOT1209

SiGe:C

MMIC

SOT891

SOT886

^ Also available in ultra-small leadless package SOD882D

Product highlight:

BGU6102 MMIC wideband amplifier

Features

` Applicable between 40 MHz and 4 GHz

` High ohmic FM LNA: 13 dB gain and 1.0 dB NF at 100 MHz

` 50 Ω FM LNA: 15 dB gain and 1.3 dB NF at 100 MHz

` Integrated temperature-stabilized bias for easy design

` Bias current configurable with external resistor

` Power-down mode current consumption < 6 μA

` ESD protection > 1 kV Human Body Model (HBM) on all pins

` Supply voltage from 1.5 to 5 V

The BGU6102 is an unmatched MMIC featuring an integrated bias-

enable function and a wide supply voltage. It is part of a family of

three products (BGU6101, BGU6102, BGU6104), and is optimized for

2 mA operation.

26

NXP Semiconductors RF Manual 16^thedition

1.4.3 China Mobile Multimedia Broadcasting (CMMB) in UHF band 470 – 862 MHz

Application diagram

Recommended products

Function

Product

Package

SOT891

SOT886

Type

BGU7003

BGU7003W

BGU6101

BGU6102

BGU6104

LNA

MMIC

SiGe:C MMIC

SOT1209

Product highlight:

BGU7003W MMIC wideband amplifier

Features

` Low-noise, high-gain microwave MMIC

` Bias current configurable with external resistor

` Noise figure NF = 1.2 dB at 600 MHz

` Insertion power gain = 19.5 dB at 600 MHz

` Power-down mode current consumption < 1 μA

` Optimized performance at low supply current of 5 mA

` ESD protection > 1 kV HBM on all pins

The BGU7003W MMIC is a wideband amplifier in SiGe:C technology

for high-speed, low-noise applications. It is housed in a plastic

leadless 6-pin extremely thin small outline SOT886 package.

NXP Semiconductors RF Manual 16^thedition

27

1.4.4 Cellular receiver

Application diagram

GSM/EDGE FE

GSM/

EDGE

SWITCH

TRANSCEIVER

PA

BPF

UMTS

LTE

duplexer

001aan957

Recommended products

Function

Product

Package

SOT891

SOT886

Type

BGU7003

BGU7003W

LNA

MMIC

SiGe:C MMIC

Product highlight:

BGU7003 MMIC wideband amplifier

Features

` Applicable between 40 MHz and 6 GHz

` LTE LNA: 1 dB NF, 18.5 dB gain and -5 dBm IIP3 at 750 MHz

` Integrated temperature-stabilized bias for easy design

` Bias current configurable with external resistor

` Power-down mode current consumption < 1 μA

` ESD protection > 1 kV Human Body Model (HBM) on all pins

The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for

high-speed, low-noise applications. It is housed in a plastic leadless

6-pin extremely thin small outline SOT886 package.

28

NXP Semiconductors RF Manual 16^thedition

1.4.5 802.11n DBDC and 802.11ac WLAN

Application diagram

low pass

ꢀlter

PActrl

Tx

antenna

medium

power

ampliꢀer

APPLICATION

CHIPSET

SPDT

switch

Rx

LNA

SPDT

bandpass

ꢀlter

bra502

Recommended products

Function

Product

Package

Type

BGA7024

BGA7027

BGA7124

BGA7127

Medium

power

amplifier

SOT89

Medium power

MMIC

amplifier

SOT908

Function

Product

RF transistor

MMIC

Package

Type

BFU730F

BFU760F

BFU730LX

SiGe:C

transistor

SOT343F

LNA

SiGe:C MMIC SOT883C

Product highlight:

Features

` System optimized gain of 12.5 dB @ 2.4 GHz and 11 dB @ 5.5 GHz

` Low noise figure (NF) of 1.1 dB @ 2.4 GHz and 5.5 GHz

` High input 1 dB gain compression (P_i(1dB)) of -8 dBm @ 2.4 GHz and

-5 dBm @ 5.5 GHz

BFU760F NPN silicon germanium microwave transistor

The BGU760F is part of the family of 6^th(Si) and 7^th(SiGe:C)

generation RF transistors and can be used to perform nearly any RF

function. These next-generation wideband transistors offer the best

RF noise figure versus gain performance, drawing the lowest current.

This performance allows for better signal reception at low power and

enables RF receivers to operate more robustly in noisy environments.

` High input third order intercept point IP3_Iof +3 dBm @ 2.4 GHz and

+8 dBm @ 5.5 GHz

` Only 8 external components required

NXP Semiconductors RF Manual 16^thedition

29

1.4.6 Generic RF front-end

Application diagram

antenna

filter

LNA

filter

mixer

buffer

VCO

LOW

SPDT

switch

FREQUENCY

CHIP SET

filter

PA

driver

VCO

bra850

Recommended products

Function

Product

Package

Type

BA277

BA591

BAP51^

BAP1321^

Function

Product

Package

SOT343

SOT363

Type

SOD523

SOD323

Various

BFG410W

BFG425W

BFG480W

BGA2022

Bandswitch

diode

RF bipolar

transistor

Wideband

transistor

SPDT switch

RF diode

Mixer

PIN diode

MMIC

Linear mixer

Function

Product

Package

SOT23

SOT323

Type

PBR951

PRF957

PRF947

Function

Product

Package

SOT23

SOT323

SOT416

Type

PBR951

PRF957

PRF947

PRF949

Wideband

transistor

RF bipolar

transistor

Wideband

transistor

Buffer

BFU610F

BFU630F

BFU660F

BFU690F

BFU710F

BFU725F/N1

BFU730F

BFU760F

BFU790F

BGU6101

BGU6102

BGU6104

RF bipolar

transistor

Function

Product

Package

Type

BGA6289

BGA6489

BGA6589

BGA7024

BGA7027

SiGe:C

transistor

General-

purpose

wideband

amplifier

LNA

SOT343F

Power

amplifier

MMIC

SOT89

Function

Product

Varicap

diodes

Package

VCO varicap SOD523

diodes SOD323

Type

BB198

BB156

Low-noise

wideband ampl.

MMIC

SOT1209

VCO

Function

Product

RF bipolar

transistor

Package

SOT323

SOT23

Type

Wideband

transistor

Gen-purp

PRF957

PBR951

BGA2771

BGA2866

Driver

SOT363

MMIC

wideband amp SOT363

^ Also available in ultra-small leadless package SOD882D

Product highlight:

Features

` Low-noise, high-linearity microwave transistor

` 110 GHz f_Tsilicon germanium technology

BFU790F silicon NPN germanium microwave transistor

` High maximum output power at 1 dB compression of 20 dBm

at 1.8 GHz

Silicon NPN germanium microwave transistor for high-speed, low-

noise applications in a plastic, 4-pin dual-emitter SOT343F package.

30

NXP Semiconductors RF Manual 16^thedition

1.5 Automotive

1.5.1 SDARS & HD radio

Application diagram

antenna

1st

stage

LNA

2nd

stage

LNA

3rd

stage

LNA

filter

CHIPSET

001aan958

Recommended products

Function

Product

Package

Type

1^ststage

LNA

Low-noise wideband

amplifier

MMIC

SOT343F

BFU730F

Function

Product

Package

Type

SOT343F

BFU690F

BGA2869

BGA2851

BGA2803

2^ndstage

LNA

General-purpose

wideband amplifier

MMIC

SOT363

Function

Product

Package

Type

BFU690F

BFU725F/N1

BFU790F

3^rdstage

LNA

RF transistor

SiGe:C transistor

SOT343F

Product highlight:

Features

At 2.3 GHz

BFU730F NPN wideband silicon germanium RF transistor

` High maximum power gain (Gp) of 17.6 dB

` Noise figure (NF) of 0.8 dB

` Input 1dB gain compression (P_i(1dB)) of -15 dBm

` Input third order intercept point IP3_Iof +4.7 dBm

The BGU730F is part of the family of 6^th(Si) and 7^th(SiGe:C)

generation RF transistors and can be used to perform nearly any RF

function. These next-generation wideband transistors offer the best

RF noise figure versus gain performance, drawing the lowest current.

This performance allows for better signal reception at low power and

enables RF receivers to operate more robustly in noisy environments.

NXP Semiconductors RF Manual 16^thedition

31

1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission

Application diagram

antenna

filter

LNA

filter

mixer

receiver

LOW

FREQUENCY

CHIP SET

buffer

VCO

antenna

filter

PA

driver

VCO

transmitter

LOW

FREQUENCY

CHIP SET

bra851

Recommended products

Function

Product

Package

SOT23

SOT323

Type

Function

Product

Package

SOT343

Type

PBR951

PRF957

PRF947

BFG410W

BFG425W

BFG480W

RF bipolar

transistor

Wideband

transistor

RF bipolar

transistor

Wideband

transistor

Mixer

LNA

BGU6101

BGU6102

BGU6104

BGU7003W

Low-noise

wideband ampl.

SOT1209

Function

Product

Package

SOT23

SOT323

SOT416

Type

MMIC

PBR951

PRF957

PRF947

PRF949

SiGe:C MMIC SOT886

RF bipolar

transistor

Wideband

transistor

Buffer

Function

Product

Package

Type

RF bipolar

transistor

Wideband

transistor

Gen-purp

SOT323

SOT23

SOT363

PRF957

PBR951

BGA2771

BGA2866

Function

Product

RF bipolar

transistor

Package

SOT323

SOT23

SOT363

SOT908

Type

Driver

Wideband

transistor

General-purpose

wideband

PRF957

PBR951

BGA2771

BGA2866

BGA7124

MMIC

wideband amp SOT363

Power

amplifier

Function

Product

Package

SOD323

Type

MMIC

amplifier

BB148

BB149A

BB198

BB156

Varicap

diodes

VCO varicap SOD323

diodes

VCO

SOD523

SOD323

^ AEC-Q101 qualified (some limitations apply)

Product highlight:

Varicap diodes as VCO

Features

` Excellent linearity

` Excellent matching

` Very low series resistance

` High capacitance ratio

Varicap diodes are principally used as voltage varicap capacitors,

with their diode function a secondary option. These devices are ideal

for voltage controlled oscillators (VCOs) in ISM band applications.

32

NXP Semiconductors RF Manual 16^thedition

1.5.3 Tire pressure monitoring system

Application diagram

antenna

filter

VCO

PA

driver

SENSOR

brb216

Recommended products

Function

Product

Package

SOT23

Type

BFR92A

SOT323

SOT23

SOT323

BFR92AW

BFR94A^

BFR93AW

BFR94AW^

RF bipolar

transistor

Wideband

transistor

PA

Function

Product

RF bipolar

transistor

Package

SOT323

SOT23

Type

PRF957

PBR951

Wideband

transistor

Driver

Amplifier

Gen-purp

wideband amp

SOT363

BGA2031/1

BGA2771

BGA2866

MMIC

Function

Product

Package

SOD523

SOD323

Type

BB198

BB156

VCO

Varicap diodes VCO varicap diodes

^ AEC-Q101 qualified (some limitations apply)

Product highlight:

BGU6101 MMIC wideband amplifier

Features

` Applicable between 40 MHz and 6 GHz

` 13 dB gain and 0.8 dB NF at 450 MHz

` 50 Ω FM LNA: 15 dB gain and 1.4 dB NF at 100 MHz

` Integrated temperature-stabilized bias for easy design

` Bias current configurable with external resistor

` Power-down mode current consumption < 1 μA

` ESD protection > 1 kV Human Body Model (HBM) on all pins

The BGU6101 is an unmatched MMIC featuring an integrated bias-

enable function and a wide supply voltage. It is part of a family of

three products (BGU6101, BGU6102, BGU6104), and is optimized for

2 mA operation.

NXP Semiconductors RF Manual 16^thedition

33

1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)

Application diagram

FM input

filter

IF

1^st

bandpass

filter

2^nd

variable IF limiter

FM de-

& AGC

mixer

BW filter amplifier modulator

f

V

FM MPX

AGC &

hum filter

oscillator

IF

AM LNA

DET

AM audio

1^st

2^nd

RF input

filter

IF

AM de-

mixer

bandpass

filter

bandpass amplifier modulator

filter

bra501

Recommended products

Function

AM LNA

Product

RF transistor

Package

SOT23

Type

BF862

Function

AGC &

hum filter

Product

RF diode

Package

Type

JFET

PIN diode

SOT363

BAP70AM

Function

Product

Package

SOT23

SOD523

SOD323

Type

BB201^

BB207

BAP70-02

BAP70-03

Varicap

diode

Function

Product

RF diode

Package

SOD323

SOD523

Type

BB156

BB208-02

FM input

filter & AGC

Varicap

diode

RF diode

Oscillator

PIN diode

^ OIRT

Note 1:

Note 2:

The following recommended discrete products are applicable for

NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684

6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H;

DDICE:TEA6721HL. All recommended discrete products are

applicable, excluding AM LNA in: DICE2:TEF6730HWCE.

Phones and portable radios (IC:TEA5767/68) use varicap BB202 as the

FM oscillator.

Product highlight:

BF862 junction field effect transistor

Features

` High transition frequency and optimized input capacitance for

excellent sensitivity

` High transfer admittance resulting in high gain

` Encapsulated in the versatile and easy-to-use SOT23 package

Our tuning portfolio contains advanced products for car radio

reception applications and in-vehicle media platforms. The NXP

devices for this application ensure excellent reception quality and

ease of design-in. Performance is demonstrated in reference designs.

The high-performance junction FET BG862 is specially designed for

AM radio amplifiers.

34

NXP Semiconductors RF Manual 16^thedition

1.6 Industrial, scientific & medical (ISM)

1.6.1 Broadcast / ISM

Application diagram

typ. 0.5 kW

DVB-T

Driver stages

typ. 5 kW DVB-T

output power

harmonic

filter

TV exciter

DVB-T

power

monitor

8× final

amplifiers

Recommended broadcast products

Function

Product f_min(MHz) f_max(MHz) P1dB (W)

VDS (V)

50

η

_D(%)

70

G_p(dB) Test signal Package

Type

10

1

500

1400

1000

1400

128

20

35

27.5

19

CW

SOT467C

SOT467

BLF571

Driver

32

63

60

49

BLF642

1

100

140

200

1200

500

300

600

40

21

CW

BLF871(S)

BLF881(S)

BLF647P(S)*

BLF178P

1

50

21

CW

SOT467

10

470

32

70

18

pulsed

CW

SOT1121

SOT539A

SOT1121

SOT539

HPA

50

75

28.5

21

Final

860

42

47

BLF879P

BLF884P(S)

BLF888A(S)

BLF888B(S)

860

50

46

21

CW

860

50

21

CW

860

50

21

CW

Recommended ISM products

Function

Product f_min(MHz) f_max(MHz) P1dB (W) Matching VDS (V)

η

_D(%)

G_p(dB)

Test signal Package

Type

Driver

1

10

1300

2400

2500

128

500

12

600

1400

200

600

1400

250

180

140

200

250

I

-

28

50

28

60

75

72

70

69

56

55

52

55

19

28

29

24

26

23

17

12

17.5

15

CW

pulsed

CW

SOT975

SOT539

SOT1121

SOT539

SOT1121

SOT539

SOT502

SOT539

BLF25M612(G)*

BLF174XR(S)*

BLF178XR(S)

BLF572XR(S)*

BLF574XR(S)*

BLF578XR(S)

BLF6G13L(S)-250P

BLF2425M6L(S)180P*

BLF2425M7L(S)140*

BLF2425M7L(S)200*

BLF2425M7L(S)250P*

HPA

500

-

I

Final

1300

2500

I/O

15

* Check status in section 3.1, as this type is not yet released for mass production

Product highlight:

BLF578XR Power LDMOS transistor

Features

` Output power = 1400 W

` Power gain = 23 dB

` High Efficiency = 69 %

` Integrated ESD protection

` Excellent ruggedness

` Excellent thermal stability

Designed for broadband operation, this 1400 W extremely rugged

LDMOS power transistor supports broadcast and industrial

applications in the HF to 500 MHz band. This product is an enhanced

version of the BLF578. It uses NXP's XR process to provide maximum

ruggedness capability in the most severe applications without

compromising RF performance.

NXP Semiconductors RF Manual 16^thedition

35

1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee

Application diagram

Looking for a wireless microcontroller platform with chipsets, modules and supporting software?

See section 2.5.6 Setting the benchmark for ultra low-power and high-performance wireless

connectivity solutions.

antenna

filter

LNA

filter

mixer

buffer

VCO

LOW

SPDT

switch

FREQUENCY

CHIP SET

filter

PA

driver

VCO

bra850

Recommended products

Function

Product

Package

SOT343

SOT363

Type

Function

Product

Package

Type

BA277

BA591

BAP51^

BAP1321^

BFG410W

BFG425W

BFG480W

BGA2022

SOD523

SOD323

Various

Bandswitch

diode

RF bipolar

transistor

Wideband

transistor

Mixer

SPDT Switch

RF diode

PIN diode

MMIC

Linear mixer

Function

Product

Package

SOT23

SOT323

SOT416

Type

Function

Product

Package

Type

PBR951

PRF957

PRF947

PRF949

BFU610F

BFU630F

BFU660F

BFU690F

BFU710F

BFU725F/N1

BFU730F

BFU760F

BFU790F

BGU7003W

RF bipolar

transistor

Wideband

transistor

Buffer

RF transistor

SiGe:C transistor SOT343F

LNA

Function

Product

RF bipolar

transistor

Package

Type

Wideband

transistor

SOT343

BFG21W

BGA6289

BGA6489

BGA6589

BGA7124

BGA7127

Medium power

amplifier

General-

purpose

wideband

amplifier

SOT89

MMIC

SiGe:C MMIC

SOT886

MMIC

SOT908

Function

Product

Package

Type

RF bipolar

transistor

Wideband

transistor

SOT343

BFG425W

Function

Product

Varicap

diodes

Package

VCO varicap SOD523

diodes SOD323

Type

BB198

BB156

Driver

SOT363

BGA2771

BGA2866

Gen-purp

wideband amp

MMIC

VCO

^ Also available in ultra-small leadless package SOD882D

Product highlight:

Features

` Operating range: 400 to 2700 MHz

` 16 dB small signal gain at 2 GHz

BGA7127 MMIC medium power amplifier

` 27 dBm output power at 1 dB gain compression

` Integrated active biasing

` 3.3 / 5 V single-supply operation

` Simple quiescent current adjustment

` 1 μA shutdown mode

The BGA7127 MMIC is a one-stage driver amplifier offered in a

low-cost, ultra-small SOT908 leadless package. It delivers 27 dBm

output power at 1 dB gain compression and superior performance

for various narrowband-tuned application circuits at frequencies up

to 2700 MHz.

36

NXP Semiconductors RF Manual 16^thedition

1.6.3 RF microwave furnace application

Application diagram

antenna

oscillator

MPA

HPA

CONTROLLER

isolator

brb418

Recommended products

Function

Product

Package

Type

BFG410W

BFG424W

BFG425W

BFG424F

BFU610F

BFU630F

BFU660F

BFU690F

BFU710F

BFU725F/N1

BFU730F

BFU760F

BFU790F

SOT343R

Oscillator

RF transistor

SOT343F

Function

Product

Package

Type

BGA6289

BGA6489

BGA6589

BGA7124

BGA7024

BGA7127

BGA7027

BGA7130

SOT89

MPA

(medium

power

SOT908

SOT89

SOT908

SOT89

MMIC

amplifier)

SOT908

* Check status in section 3.1, as this type is not yet released for mass production

Function

Product

f_min(MHz) f_max(MHz) P1dB (W)

η

_D(%)

G

_p(dB)

test signal

Package

Type

Driver

1

2500

12

60

55

52

55

19

12

17.5

15

CW

SOT975

SOT539

SOT502

SOT539

BLF25M612(G)

2400

180

140

200

250

BLF2425M6L(S)180P

BLF2425M7L(S)140*

BLF2425M7L(S)200

BLF2425M7L(S)250P*

HPA

Final

15

Product highlight:

Features

` Excellent ruggedness

New family for ISM 2.45 GHz

` Consistent device performance

` Low thermal resistance for unrivalled reliability

` Ease of design

th

NXP's 6^thand 7 generation LDMOS technology, along with advanced

packaging concepts, enables power amplifiers that deliver best-in-class

performance at 2.45 GHz. The unsurpassed ruggedness and low thermal

resistance, along with the intrinsic efficiency of the LDMOS process,

make these transistors ideally suited for furnace applications.

NXP Semiconductors RF Manual 16^thedition

37

1.6.4 RF plasma lighting

Looking for more information on RF plasma lighting?

See section 2.5.2 RF-driven plasma lighting: The next revolution in light

sources are powered by solid-state RF technology

Application diagram

RF (plasma) bulb

oscillator

MPA

HPA

CONTROLLER

brb436

Recommended products

Function

Product

Package

Type

SOT143

SOT23

BFG520

BFG325/XR

BFR520

SOT323

SOT343

SOT363

SOT416

BFR92AW

BFR93AW

BFS520

BFG520W

BFG325W/XR

BFM520

Oscillator

RF transistor

BFR520T

Function

Product

Package

Type

BGA6289

BGA6489

BGA6589

BGA7124

BGA7024

BGA7127

BGA7027

BGA7130

SOT89

MPA

(medium

power

SOT908

SOT89

SOT908

SOT89

MMIC

amplifier)

SOT908

Function

Product

f_min(MHz)

f_max(MHz)

P1dB (W)

Package

Type

1

10

1

10

688

700

2400

2500

500

1000

500

12

20

SOT975

SOT467C

SOT467

SOT502

SOT539A

SOT539

SOT539A

SOT539

SOT502

SOT539

SOT502

SOT539

BLF25M612(G)*

BLF571

BLF871(S)

BLF573(S)

BLF574

BLF574XR(S)*

BLF578

BLF578XR(S)

BLF6G10(LS)-200RN

BLF6G10(LS)-135RN

BLF6G10(LS)-160RN

BLF2425M6L(S)180P*

BLF2425M7L(S)140

BLF2425M7L(S)200*

BLF2425M7L(S)250P

Driver

100

300

600

1200

1400

200

135

160

180

140

200

250

500

HPA

Final

1000

2500

* Check status in section 3.1, as this type is not yet released for mass production

Product highlight:

Features

` Highest power device

LDMOS enables RF lighting

` Unprecedented ruggedness

` Low thermal resistance for reliable operation

` Consistent device performance

` Broadband device for flexible use

NXP's 50 V high-voltage LDMOS process enables highest power at

the extreme ruggedness levels necessary for this kind of application.

BLF578: 1200 W CW operation - highest power LDMOS

38

NXP Semiconductors RF Manual 16^thedition

1.6.5 Medical imaging

Looking for more information on medical applications?

See section 2.5.1 Medical applications driven by RF power: From imaging

to cancer treatment, a ﬂexible and versatile technology in the doctor’s toolbox

Application diagram

Magnet

X GRADIENT

Gradient coils

RF coils

AMPLIFIER

Y GRADIENT

AMPLIFIER

WAVEFORM

GENERATOR

Z GRADIENT

AMPLIFIER

RF amplifier

RF

ADC

COMPUTER

ELECTRONICS

IMAGE

DISPLAY

brb434

Recommended products

Function

Product

f_min(MHz)

f_max(MHz)

P1dB (W)

Package

Type

1

10

1

10

688

700

2400

2500

500

1000

500

12

20

SOT975

SOT467C

SOT467

SOT502

SOT539A

SOT539

SOT539A

SOT539

SOT502

SOT539

SOT502

SOT539

BLF25M612(G)*

BLF571

BLF871(S)

BLF573(S)

BLF574

BLF574XR(S)*

BLF578

BLF578XR(S)

BLF6G10(LS)-200RN

BLF6G10(LS)-135RN

BLF6G10(LS)-160RN

BLF2425M7L(S)140

BLF2425M6L(S)180P*

BLF2425M7L(S)200*

BLF2425M7L(S)250P

Driver

100

300

600

1200

1400

200

135

160

140

180

200

250

500

HPA

Final

1000

2500

* Check status in section 3.1, as this type is not yet released for mass production

Product highlight:

Features

` Best broadband efficiency

` Highest power (density) devices

` Unrivalled ruggedness

LDMOS in emerging medical applications

NXP’s line of 50 V high-voltage LDMOS devices enables highest

power output and features unequalled ruggedness for pulsed

operation in MRI and NMR applications. The high power densities

enable compact amplifier design.

` Consistent device performance

NXP Semiconductors RF Manual 16^thedition

39

1.7 Aerospace and defense

1.7.1 Microwave products for L- and S-band radar and avionics applications

Application diagram

RF signals

video, timing, bias voltage,

control and data

I-f signals

RF small signal

ANTENNA

DRIVE

RF POWER BOARD

MPA HPA ISOLATOR

RF power

mixer

PLL VCO

local oscillator

VGA

duplexer

local oscillator signal

DISPLAY

WAVEFORM

GENERATOR

PLL VCO

AND

CONTROL

control and timing

mixer

DETECTOR

video

LNA

IF amplifier

brb410

Recommended products

Function

Product

f_min(MHz)

f_max(MHz)

P1dB (W)

VDS (V)

η

_D(%)

G_p(dB)

Package

Type

500

1030

2700

3100

400

500

960

1030

1200

2700

2900

3100

1400

1090

3100

3500

1000

1400

1215

1090

1400

3100

2900

3300

3500

25

10

2

6

30

50

36

32

50

36

50

28

48

36

50

32

50

40

-

19

16

15

13

15.5

20

17

13.5

17

20

SOT467C

SOT538A

SOT975C

SOT1135

SOT608

BLL6H0514-25

BLA1011-10

BLA1011-2

BLS6G2731-6G

Driver

33

50

45

57

50

65

52

45

50

55

50

47

43

BLS6G2735L(S)-30

BLS6G3135(S)-20

BLU6H0410L(S)-600P

BLL6H0514L(S)-130

BLA0912-250R

BLA6H0912-500

BLA6G1011LS-200RG

BLA6H1011-600

BLL6G1214L-250

BLL6H1214-500

BLL6H1214L(S)-250

BLS6G2731S-130

BLS7G2729L(S)-350P

BLS7G2933S-150

BLS6G3135(S)-120

BLS7G3135L(S)-350P*

20

600

130

250

500

200

600

250

500

250

130

350

150

120

350

SOT539

SOT1135

SOT502A

SOT634A

SOT502

SOT539A

SOT502A

SOT539A

SOT502

SOT922-1

SOT539

SOT922-1

SOT502

HPA

17

15

17

Final

12

13.5

11

10

SOT539

* Check status in section 3.1, as this type is not yet released for mass production

Product highlight:

Features

` Easy power control

BLS7G2729L-350P LDMOS S-band radar power transistor

` Integrated ESD protection

` High flexibility with respect to pulse formats

` Excellent ruggedness

` Excellent thermal stability

Designed for S-band operation (2.7 to 2.9 GHz), this internally

matched LDMOS power transistor for rader applications delivers an

output power of 350 W and a power gain of 13.5 dB at an efficiency

of 50 %.

40

NXP Semiconductors RF Manual 16^thedition

Function

Product

RF transistor

Package

Type

BFU710F

BFU725F/N1

BFU730F

LNA (low-noise

amplifier) & Mixer

SiGe:C transistor

SOT343F

Function

Product

Package

Type

BGA2800

BGA2801

BGA2815

BGA2816

BGA2850

BGA2865

BGA2866

BGM1014

BGM1013

BGM1012

MMIC

IF amplifier

MMIC

SOT363

General-purpose

wideband

amplifiers

Function

Product

RF IC

Package

Type

TFF1003HN

TFF1007HN

TFF11xxxHN^

PLL/VCO

LO generator

SiGe:C IC

SOT616

Function

Product

MMIC

Gain range

Package

Type

BGA7210

BGA7204

Single VGA (variable-

gain amplifier)

31 dB

SOT617

Function

Product

MMIC

Gain range

Package

Type

24 dB

28 dB

BGA7350

BGA7351

Dual VGA (variable-

gain amplifier)

SOT617

Function

Product

P_{L (1 dB)}@ 940 MHz

Package

Type

24 dBm

28 dBm

25 dBm

28 dBm

30 dBm

BGA7024

BGA7027

BGA7124

BGA7127

BGA7130

SOT89

MPA

(medium power

amplifier)

MMIC

SOT908

^ 17 different types with LO ranges: 7-15 GHz, see 3.4.4

Product highlight:

Features

` No output inductor necessary when used at the output stage

` Internally matched to 50 Ω

BGA28xx-family of IF gain blocks

` Reverse isolation > 30 dB up to 2 GHz

` Good linearity with low second order

The BGA28xx IF gain blocks are silicon Monolitic Microwave

Integrated Circuit (MMIC) wideband amplifiers with internal

matching circuitry in a 6-pin SOT363 plastic SMD package.

NXP Semiconductors RF Manual 16^thedition

41

2.ꢀ Focusꢀapplications,ꢀproductsꢀ&ꢀtechnologies

2.1ꢀWirelessꢀcommunicationꢀinfrastructure

2.1.1ꢀ ꢀBuildꢀaꢀhighlyꢀefficientꢀsignalꢀchainꢀwithꢀRFꢀcomponentsꢀforꢀtransmitꢀline-upsꢀandꢀreceiveꢀchains

As a global leader in RF technology and component design, NXP Semiconductors offers a complete

portfolio of RF products, from low- to high-power signal conditioning that delivers advanced performance

and helps simplify your design and the development process. Our solutions range from discrete devices to

modular building blocks, so you can design a highly efficient signal chain.

State-of-the-art QUBiC4

Application diagram of base station

NXP’s industry-leading QUBiC4 technology, available since

2002, has been widely deployed in the field and offers

more consistent parameter performance compared to GaAs

technology. It speeds the migration from GaAs to silicon and

delivers more functionality in less space. High integration

reduces the design footprint and enables more cost-

competitive designs. It also improves reliability and offers

significant savings in manufacturing expenditures.

(all cellular standards and frequencies)

The block diagram below shows base station transmit (upper

part, Tx) and receive (lower part, Rx) functions, and includes

the Tx feedback function (middle part, Tx feedback).

IQ-Modulator

I

Power Amplifier

DVGA RF-BP

MPA

HPA

PLL

VCO

Dual

DAC

0

90

Transmitter

Mixer+LO

Q

IF-SAW

DVGA

Digital

Front

End

Tower -

Mounted

Amplifier

JEDEC

IF

Att.

ADC

TX / RX1

Tx

DPD

CFR

DUC

DDC

LO

LNA +VGA

RF-SAW

Rx

µC

RX2

Dual

DVGA

PLL

VCO

Dual

ADC

Dual

Mixer

BP or LP

IF-SAW

LNA

Filter Unit

LNA+VGA

Clock

Generator

Jitter Cleaner

Data Converter

RF Small Signal

RF Power

Micro Controller

Digital wideband VGAs with high linearity & flexible

current settings

The unique power-save mode can effectively reduce the current

consumption in TDD systems up to 45%. The BGA7210 adds

flexible current distribution across its two amplifiers, depending

on the attenuation state, to save current.

These 6-bit digital VGAs (BGA7204 & BGA7210) offer high

linearity (35 dBm @ 2.2-2.8 GHz) and high output power

(23 dBm @ 2.2-2.8 GHz) across a large bandwidth without

external matching. Smart routing with no connection crosses

simplifies design and decreases footprint by 25%.

42

NXP Semiconductors RF Manual 16^thedition

Dual digital IF VGAs

IQ modulators

The BGA7350 and BGA7351 are dual, independently controlled

receive IF VGAs that operate from 50 to 250 MHz. Integrated

matching improves performance in the receiver chain, because

the VGA can drive the ﬁlter directly into the analog-to-digital

converter to ensure a constant input level. The BGA7350 has a

gain range of 24 dB, while the BGA7351 has a range of 28 dB.

For both devices, the maximum gain setting delivers at least

16 dBm output power at 1 dB gain

The BGX7100 and BGX7101 devices combine high performance,

high linearity I and Q modulation paths for use in radio

frequency up-conversion. It supports RF frequency outputs in

the range from 400 to 4000 MHz. The BGX710x IQ modulator

is performance-independent of the IQ common mode voltage.

The modulator provides a typical output 1 dB compression point

(PL(1dB)) value of 12 dBm and a typical 27 dBm output third-

order intercept point (IP3_O). Unadjusted sideband suppression

and carrier feed through are 50 dBc and −45 dBm respectively.

A hardware control pin

compression (P1dB). For gain control,

each ampliﬁer uses a separate digital

gain-control code, which is provided

provides a fast power-down/

externally through two sets of ﬁve

power-up mode functionality

bits. The resulting gain ﬂatness

which allows signiﬁcant

is 0.1 dB.

power saving. The BGX7101

is 4 dB higher gain compared

Medium power amplifier

to the BGX7100.

The NXP MPAs (BGA7x2x/BGA7x3x) are based on a one-stage

ampliﬁer, available in a low-cost surface-mount package.

It delivers a set of available output power from 24 to 30 dBm.

All cover the frequency range from 400 to 2700 MHz.

Dual mixers

The BGX722x device combines a pair of high-performance,

high-linearity down-mixers for use in receivers having a common

local oscillator (e.g. having main and diversity paths). Each mixer

provides an input 1 dB compression point

(P1dB) above 13 dBm, with an input third-

order intercept point (IIP3) of 26 dBm.

Low-noise amplifiers up to 2.8 GHz

Designed for high linearity and low noise, these monolithic

SiGe:C BiCMOS LNAs (BGU7051, BUG7052 & BGU7053) deliver

18-24 dB gain, 3-5 dB more gain than equivalents, along with

low power consumption. The RF input power overdrive of

20 dBm and the high ESD protection

(HBM 4 kV; CDM 2 kV) make these

The small-signal noise ﬁgure (NF) is below

10 dB whereas under large signal blocking

conditions the NF is typically 19 dB.

Isolation between mixers is at least 40 dB.

devices extremely rugged.

Integrated biasing circuitry,

Synthesizer with an integrated VCO (LO generator)

The BGX7300 is a low phase noise wideband synthesizer

with an integrated VCO which allows the implementation of

an integer-N or fractional-N Phase-Locked Loop (PLL). The

integrated voltage controlled oscillator (VCO) supports a

fundamental frequency range from 2.2 GHz up to 4.4 GHz.

The BGX7300 has dual differential RF outputs, each with output

power up to +5 dBm. The VCO frequency can by divided by

1/2/4/8/16/32 before being fed to the RF outputs. Hence the

generated output frequency can be as low as 68.75MHz. For

isolation purpose, each RF output can be muted or forced into

power-down mode using a hardware pin or SPI sofware control.

A dedicated differential input stage lets the BGX7300 work with

3.3 V supply voltage and low

external component count (only

6 capacitors) ensures easy system

integration.

Integrated base station LNAs with lowest NF for

the complete LNA chain

NXP provides the industry’s only fully Integrated base station

LNA that can be tailored to the needs of individual OEMs for

optimal ﬁt in their Rx line-ups. By integrating three stages in

one monolithic design, these SiGe:C BiCMOS LNAs (BGU706x)

deliver the industry’s lowest noise ﬁgure for a receive chain

(0.9 dB), while saving up to 80% in component cost. Additionally, an external VCO. Most of the characteristics are programmable

the analog gain control up to 35 dB, RF input power overdrive

of 10-15 dBm, and high linearity (0.9-2.5 dBm IP3I at maximum

gain) make them very suitable in small cell sizes.

via a 3- or 4-wire Serial Peripheral Interface bus (SPI). Each VCO

is powered from an internally regulated voltage source providing

sufﬁcient power supply rejection. The device is designed to

operate from 3.3 V nominal supply voltage connected to the

supply pins.

Selection guides of the listed components are available

in Chapter 3 (3.4.1 & 3.4.2).

NXP Semiconductors RF Manual 16^thedition

43

2.1.2ꢀ DigitalꢀwidebandꢀVGAsꢀwithꢀhighꢀlinearityꢀ&ꢀflexibleꢀcurrentꢀsettingsꢀ

NXP digital VGAs BGA7204 & BGA7210

These 6-bit digital VGAs offer high linearity (35 dBm @ 2.2-2.8 GHz) and high output power

(23 dBm @ 2.2-2.8 GHz) across a large bandwidth without external matching. Smart routing with no

connection crosses simplifies design and decreases footprint by 25%. The unique power-save mode

can effectively reduce the current consumption in TDD systems up to 45%. The BGA7210 adds flexible

current distribution across its two amplifiers, depending on the attenuation state, to save current.

Key features

Applications

`Internally matched for 50 Ω

- BGA7204 = 0.4 to 2.75 GHz

- BGA7210 = 0.7 to 3.8 GHz

`High maximum power gain

- BGA7204 = 18.5 dB

`GSM, W-CDMA, WiMAX, LTE base stations

`Wireless point-to-point and repeaters

`Cable modem termination systems

`Temperature-compensation circuits

- BGA7210 = 30 dB

`High output third-order intercept, IP3_O

- BGA7204 = 38 dBm

- BGA7210 = 39 dBm

`Attenuation range of 31.5 dB, 0.5 dB step size (6 bit)

`High output power, P_L(1dB)

- BGA7204 = 21 dBm

- BGA7210 = 23 dBm

OM7921 – BGA7210 customer evaluation kit

(also available OM7922 – BGA7204 CEK)

`Fast switching power-save mode (power down pin)

`Digitally controlled current setting from 120 to 195 mA with

an optimum at 185mA (BGA7210 only)

`Simple control interfaces

- BGA7204 SPI and parallel

- BGA7210 SPI

`ESD protection on all pins (HBM 4 kV; CDM 2 kV)

`HVQFN32 (5 x 5 x 0.85 mm)

Key beneﬁts

`Wideband operation supports platforms with multiple

frequency ranges

`Smart lead routing produces simpler design, decreases

footprint by 25%

`Power-save mode can reduce current consumption in

TDD systems up to 45%

`Flexible current setting (BGA7210) saves power

`Monolithic design enables high quality

44

NXP Semiconductors RF Manual 16^thedition

The NXP BGA7204 and BGA7210 are monolithic digital

variable-gain ampliﬁers (VGAs) that operate over an extremely

wide range with high linearity and high output power.

The BGA7210 builds on the BGA7204 by adding ﬂexible

current setting across its two ampliﬁers, depending on the

attenuation state. The serial peripheral interface is used to set

the attenuation state, and, using a similar method, to set the

current through the ﬁrst and second ampliﬁers. The desired

conﬁguration is set by software and enables current savings of

as much as 75 mA.

Designed for the transmit path of wireless architectures, these

VGAs can be used to control the power level to the power

ampliﬁer. The up-converted signals are fed to the VGA, and

thus help compensate for variations in cell load and the

presence of aging infrastructure equipment.

Higher output power, higher peak gain, and smaller attenuator

step sizes enable engineers to use fewer components and

The BGA7204 operates in the range between 0.4 and 2.75 GHz, provide greater control to maintain and optimize performance

while the BGA7210 operates between 0.7 and 3.8 GHz. By

supporting more than 2 GHz of bandwidth, these devices can

be used to populate several frequency bands.

in the transmit chain.

Smart routing (with no connection crosses) reduces the number

of board connections, simpliﬁes design-in, and decreases the

design footprint by 25%. The monolithic design increases

reliability and ensures high quality.

An integrated power-save mode makes it possible to reduce

consumption even more, to just 15 mA during a receive slot.

This can effectively reduce the current consumption in Time

Division Duplexing (TDD) systems up to 45%.

Schematic of BGA7210 evaluation board (OM7921)

V

SUP

C23

L1

C22

C26

C25

C24

C12

PUPMXG/

C14

V

CC1

DDD

PWRDN

CLK SERIN SS SEROUT

24

23

22

21 20

19

17

V

DDA

16

C18

C17

V

CC2

15

L2

C27

C1

RF_IN

RF_OUT

29

12

RF_OUT

Csh

aaa-000665

Digital VGAs

G_pꢀ@ꢀ

f_range

[min]

(MHz)

f_range

[max]

(MHz)

@ꢀI_CC

[typ]

(mA)

Attenuationꢀ

range

IP3_O

[typ]

(dBm)

P_L(1dB)

[typ]

(dBm)

NF

[typ]

(dB)

Typeꢀ

number

@ꢀV_CC

(V)

minimumꢀꢀ

attenuation

(dB)

Package

(dB)

400

700

5

115

185

18.5

17.5

16.5

30.0

29.5

29.0

28.0

26.0

31.5

30.5

30.0

31.5

30.5

29.5

38.0

37.5

36.0

34.0

39.0

37.0

35.0

27.0

21.0

20.5

20.0

21.0

23.0

19.0

7.0

6.5

7.0

6.5

7.0

8.0

1450

2100

2750

1400

1700

2200

2800

3800

BGA7204

SOT617-3

1450

2100

700

1400

1700

2200

3400

BGA7210

NXP Semiconductors RF Manual 16^thedition

45

2.1.3ꢀ Dohertyꢀamplifierꢀtechnologyꢀforꢀstate-of-the-artꢀwirelessꢀinfrastructure

Best-in-class PA designs enable considerable energy savings

NXP’s latest power amplifier designs let the wireless infrastructure run with significantly higher energy

efficiency – towards “Green Base Stations”. In order to achieve the highest efficiencies currently possible,

NXP combines its latest generations of LDMOS technology (Gen7 & 8) with the Doherty concept. The high

performance of our LDMOS technology, matched with the efficiency of the Doherty technology, creates

power amplifiers that offer high efficiency and high gain, are easily linearizable, and are more cost-effective

to operate.

Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely unused because the dominant

mobile communication system modulation techniques (FM, GMSK, and EDGE) did not require high peak-to-

average ratio (PAR) signals. For today's base stations, however, transmitting 3G, 4G, and multi-carrier signals

makes the high power and added efficiency of the Doherty approach the preferred option for most service

providers.

NXP’s Doherty designs ensure high efficiency while maintaining a very similar peak power capability of two

transistors combined. The input and output sections are internally matched, benefiting the amplifiers with

high gain, good gain flatness, and phase linearity over a wide frequency band.

Key features & benefits

Integrated Doherty

`Contains splitter, main and peak amplifier, delay lines,

NXP offers the world’s first fully integrated Doherty designs.

and combiner in one package

From the outside these devices look like ordinary transistors.

- 40% efficiency @ 10 W average power

In fact, they are completely integrated Doherty amplifiers that

- No additional tuning in manufacturing

readily deliver the associated high efficiency levels for base

`Design is as easy as with a single Class AB transistor

station applications. With the ease of design-in of an ordinary

`Ideally suited for space-constrained applications

Class AB transistor, they also provide significant

(e.g. remote radio heads, antenna arrays)

space and cost savings.

`Currently available for TD-SCDMA (BLD6G21L(S)-50) and

W-CDMA (BLD22L(S)-50); see section 3.7.1.4 for details

46

NXP Semiconductors RF Manual 16^thedition

Discrete Doherty amplifiers

Key features & benefits

In addition to the integrated versions, NXP offers product

`Most efficient Doherty amplifier designs available to date

demonstrators for very efficient, high-power, discrete two- and `Production-proven, consistent designs

three-way Doherty amplifiers. The two-way designs, based on

the BLF7G22LS-130 device, deliver 47.0 dBm (50 W) with 43%

efficiency and 15.7 dB gain for W-CDMA applications.

`NXP’s LDMOS provides unsurpassed ruggedness

`Currently available for the following frequency bands:

- 728 to 821 MHz

- 869 to 960 MHz

- 1805 to 1880 MHz (DCS)

- 1930 to 1990 MHz (PCS)

- 1880 to 2025 MHz (TD-SCDMA)

- 2110 to 2170 MHz (UMTS / LTE)

- 2300 to 2400 MHz (WiBRO / LTE)

- 2500 to 2700 MHz (WiMAX / LTE)

- 3300 to 3800 MHz (WiMAX)

All of our product demonstrators are supported by

comprehensive documentation and hardware.

Please see section 3.7.1.8 for a complete list of available

designs.

Our flagship three-way Doherty demonstrator achieves

48% efficiency at 48 dBm (63 W) average output power and

15.0 dB gain with a two-carrier W-CDMA signal. The current

design covers the W-CDMA standard for band 1 operation

and is tailored towards high-yield, minimum-tuning, volume

manufacturing.

Power LDMOS Doherty designs

Freqꢀbandꢀ

(MHz)

PPEAKꢀ

(dBm)

POUT-AVGꢀ

(dBm)

VDSꢀ

(V)

Gainꢀ

(dB)

DrainꢀEff.ꢀ

(%)

Type

Mainꢀtransistor

Peakꢀtransistor

869-894

59.2

57.3

56.6

58.6

58.2

52.2

56.5

57.2

56.8

55.2

50.4

49.3

48.6

51

28

30

28

30

16

52

50

42

3-WAY

ASYM

SYM

BLF7G10LS-250

BLF8G10LS-160

BLF7G15LS-200

BLF7G20LS-200

BLF7G20LS-250P

1/2 BLF7G21LS-160P

BLF7G22LS-160

BLF7G24LS-100

BLF7G27LS-100

2x BLF7G10LS-250

BLF7G10LS-250

920-960

1526-1555

1805-1880

1930-1990

2010-2025

2110-2170

2300-2400

2620-2690

18.4

16

BLF7G15LS-200

47.6

40

43

46

47

3-WAY

SYM

2x BLF7G20LS-200

BLF7G20LS-250P

1/2 BLF7G21LS-160P

BLF7G22LS-200

50

16

44

15.6

14.2

16

SYM

49

ASYM

3-WAY

ASYM

49.2

48.5

47.2

2x BLF7G22L(S)-160

2x BLF7G24LS-100

BLF7G27LS-140

15

42

15

41

NXP Semiconductors RF Manual 16^thedition

47

2.1.4ꢀ TheꢀnewꢀgenerationꢀofꢀLDMOSꢀRFꢀpowerꢀforꢀwirelessꢀinfrastructures:ꢀNXP'sꢀGen8ꢀ

NXP announced last year the 8th generation of its renowned RF power device portfolio for base stations.

Listening carefully to the world’s leading infrastructure providers and understanding their requirements, we

took a holistic approach to the development of Gen8. This means that we scrutinized every detail of a power

transistor and reconsidered the entire “transistor system” to ceate a new generation that performs markedly

better than its predecessors, and its competitors, and again sets standards for the industry.

Gen8 addresses the key trends in the wireless

infrastructure industry

Gen8 is the answer to all these often conflicting requirements.

The package and die design, as well as the input and output

match structures, have been optimized to enable wideband,

affordable, compact, multi-standard, and highly efficient

Doherty power amplifiers. Solutions for all cellular frequency

bands are currently being sampled and are in production or

will be released throughout 2012.

`Increasing signal bandwidths up to 100 MHz to enable

full-band operation

`Cost sensitivity: peak powers up to 270 Watts in SOT502-

sized packages

`Reduction in the size/weight/volume of the cabinet

`The ongoing need for greater electrical efficiency to reduce

cooling requirements and operational expenditures

`Ever-increasing output power

`The need to deploy multi-standard and future-proof

solutions

The ﬁrst wave of Gen8 transistors

f_min

(MHz)

f_max

(MHz)

P1dBꢀ

(W)

Plannedꢀ

release

Type

Matching

Package

Description

Gen8 ceramic LDMOS transistor for GSM, WCDMA &

LTE applications

Gen8 ceramic LDMOS transistor for GSM, WCDMA &

LTE applications

Gen8 ceramic LDMOS transistor for GSM, WCDMA &

LTE applications (gull-wing)

Gen8 ceramic LDMOS transistor for GSM, WCDMA &

LTE applications (gull-wing)

Gen8 ceramic push-pull LDMOS transistor for GSM,

WCDMA & LTE applications (gull-wing)

Gen8 ceramic push-pull LDMOS transistor for GSM,

WCDMA & LTE applications (gull-wing)

Gen8 ceramic LDMOS transistor for GSM & LTE

applications

Gen8 ceramic LDMOS transistor for GSM & LTE

applications (gull-wing)

Gen8 ceramic push-pull LDMOS transistor for GSM &

LTE applications (gull-wing)

Gen8 ceramic LDMOS transistor for WCDMA & LTE

applications

Gen8 ceramic LDMOS transistor for WCDMA & LTE

applications (gull-wing)

Gen8 ceramic LDMOS transistor for WCDMA & LTE

applications (gull-wing)

Gen8 ceramic push-pull LDMOS transistor for

WCDMA & LTE applications (gull-wing)

Gen8 ceramic push-pull LDMOS transistor for

WCDMA & LTE applications

Gen8 ceramic LDMOS transistor for WCDMA & LTE

applications (gull-wing)

Gen8 ceramic LDMOS transistor for WCDMA & LTE

applications

Gen8 ceramic push-pull LDMOS transistor for

WCDMA & LTE applications (gull-wing)

Gen8 ceramic push-pull LDMOS transistor for

WCDMA & LTE applications (gull-wing)

BLF8G10L(S)-160

920

700

960

160

200

270

300

400

200

270

160

200

270

400

200

140

200

280

I/O

SOT502

SOT1244

Released

Q412

BLF8G10L(S)-160V

BLF8G10LS-200GV

BLF8G10LS-270GV

BLF8G10L(S)-300P

BLF8G10LS-400PGV

BLF8G20L(S)-200V

BLF8G20LS-270GV

BLF8G20LS-270PGV

BLF8G22LS-160BV

BLF8G22LS-200GV

BLF8G22LS-270GV

BLF8G22LS-400PGV

BLF8G24L(S)-200P

BLF8G27LS-140G

BLF8G27LS-140V

1000

960

700

SOT1244C

SOT539

700

Q412

850

Q312

700

1000

2000

2200

2400

2700

SOT1242C

SOT1120

Q412

1800

2000

2300

2500

2600

2500

Released

Q412

SOT1244C

SOT1242C

SOT1120B

SOT1244C

SOT1242C

SOT539

Q412

Released

Q312

SOT502E

SOT1244B

SOT1242C

Q412

BLF8G27LS-200PGV

BLF8G27LS-280PGV

Q412

Note: All devices are internally matched (I/O)

48

NXP Semiconductors RF Manual 16^thedition

2.2ꢀBroadbandꢀcommunicationꢀinfrastructure

2.2.1ꢀ Connectingꢀpeople,ꢀprotectingꢀyourꢀnetwork:ꢀNXP'sꢀCATVꢀC-familyꢀforꢀtheꢀChineseꢀ

SARFTꢀstandard

Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP's CATV C-family offers a

total solution for cable TV networks. It is both flexible enough for connecting rural communities as part of

China’s "Connecting to Every Village" program and powerful enough for upgrading major cities from analog

to high-end digital services. All C-type devices are compliant with the Chinese State Administration for Radio,

Film and Television (SARFT) standard, and cover most HFC applications in the 550 MHz to 1 GHz range.

Products

The BGY588C, BGE788C and BGD712C devices cover

the frequency range from 550 MHz to 750 MHz. Extending

the C-family portfolio into the high-end segment, the

CGD944C, CGD942C, CGY888C and BGO807C operate

between 40 and 870 MHz and have been speciﬁcally tested

under Chinese raster conditions. Manufactured using our GaAs

HFET die process, the CGD942C and CGD944C are high-gain,

high-performance 870 MHz power doublers. The CGD982HCi,

CGD985HCi and CGD987HCi operate from 40 to 1003 MHz

and are speciﬁed for 870 MHz and 1 GHz. These power

doublers are optimized for the Chinese SARFT standard. They

are capable of satisfying the demanding requirements of top-

end applications, including high-power optical nodes.

`BGY588C, BGE788C and CGY888C push-pull amplifiers

`BGD712C, CGD944C, CGD942C, CGD982HCi, CGD985HCi

and CGD987HCi power doublers

`BGO807C, BGO807CE optical receivers

Beneﬁts

`Compliant with Chinese SARFT HFC networks standard

`Transparent cap allows confirmation of product authenticity

`Rugged construction

`Highest by Design internal ESD protection

Features

`Excellent linearity, stability, and reliability

`High power gain

Our GaAs HFET MMIC dies are designed to provide the best

ESD protection levels, without the external TVS components

normally used with GaAs pHEMT devices.

`Extremely low noise

`Silicon nitride passivity

`GaAs HFET dies for high-end devices

All CATV C-type devices feature a transparent cap that makes

it easy to distinguish them from counterfeit products.

C-family application information

NXPꢀC-familyꢀbyꢀapplication

CGD982HCi

BGO807C

CGD942C

CGD944C

Application

BGY588C

BGE788C

CGY888C

BGD712C

CGD985HCi

CGD987HCi

BGO807CE

Optical node

•

Optical receiver

Distribution ampliﬁer

Line-extender ampliﬁer

Terminating ampliﬁer

•

NXP Semiconductors RF Manual 16^thedition

49

BGY588C, BGE788C, and CGY888C

The last stage of an HFC network structure is called

IN

OUT

port

a ‘terminating ampliﬁer‘ or, since it's close to the subscriber, a

"user ampliﬁer." terminating ampliﬁer requires a single module

such as the BGY588C for 550 MHz, the BGE788C for 750 MHz

and the CGY888C for 870 MHz systems. These modules ﬁt

perfectly in the Chinese "Connecting to Every Village" projects.

PAD

EQ

port

BGY588C

BGE788C

CGY888C

bra820

BGD712C

The BGD712C is a 750 MHz, 18 dB power doubler module.

It has been designed for 750 MHz optical nodes including

ordinary or optical receivers and distribution ampliﬁers.

It can also be used in line-extender ampliﬁers together with

a 750 MHz push-pull module, such as the BGY785A or the

BGY787. As such it can be used widely in Chinese "Connecting

to Every Village" projects.

IN

OUT

port

PAD

EQ

port

BGY785A

BGY787

BGD712C

bra821

CGD944C and CGD942C

Our full GaAs power doubler modules, the CGD942C and

the CGD944C offer high output power and better CTB

and CSO than other modules. Designed for high-end HFC

networks containing optical nodes with multiple out-ports,

these modules enable each port to directly cover at least

125 subscribers. These two devices are ideal when used in

upgrading HFC networks to 870 MHz.

CGD94xC / CGD98xHCi

PAD

OUT

port 1

H

L

CGD94xC / CGD98xHCi

PAD

OUT

port 2

H

L

EQ

PAD

CGD94xC / CGD98xHCi

BGO807C

BGO807CE

PAD

OUT

port 3

RF switch

H

L

(N + 1)

CGD982HCi, CGD985HCi, and CGD987HCi

CGD94xC / CGD98xHCi

Our newest GaAs power doubler modules, the CGD982HCi,

the CGD985HCi and the CGD987HCi are customized designs

for CATV hybrid ﬁber coax Chinese networks operating in the

40 to 1003 MHz bandwidth, and speciﬁed with the Chinese

cable TV network ofﬁcial loading raster on top of the

traditional NTSC loading rasters. For use in optical notes for

ﬁber deep applications where the output power level needs

to be at its highest.

PAD

OUT

BGO807C

H

L

port 4

BGO807CE

bra822

BGO807C

The BGO807C is an integrated optical receiver module that

provides high output levels with integrated temperature-

compensated circuitry. In an optical node design, the

BGO807C enables a high performance / price ratio

and ruggedness. When upgrading an HFC network from

analog to digital, the BGO807C is the perfect ﬁt.

BGD812

PAD

OUT

H

L

port 1

PAD

EQ

BGD812

BGO807C

BGO807CE

BGY885A

OUT

H

L

port 2

bra823

50

NXP Semiconductors RF Manual 16^thedition

Connecting people, protecting your network

NXP CATV C-family for the Chinese SARFT standard

Push-pull ampliﬁers

Parameters

BGY588C

BGE788C

CGY888C

Power gain (dB)

Typ

Range

Max

34.5

0.2 - 1.7

-57

34.2

0.3 - 2.3

-49

35.5

1.5 typ.

-68 typ.

-66 typ.

4 typ.

Slope cable equivalent (dB)

Composite triple beat (dB)

Composite 2nd order distortion (dB)

Noise (@ f_max) (dB)

Max

-62

-52

Max

8

Total current consumption (mA)

Frequency range (MHz)

Typ

325

305

280

Range

40 - 550

40 - 750

40 - 870

Power doublers

Parameters

BGD712C

CGD942C

CGD944C

CGD982HCi

CGD985HCi

CGD987HCi

Power gain (dB)

Typ

Range

Max

18.5

0.5 - 1.5

-62

23

1 - 2

25

1 - 2

23

0.5 - 2

-66

24.5

0.5 - 2

-66

27

0.7 - 2

-66

Slope cable equivalent (dB)

Composite triple beat (dB)

Composite 2^ndorder distortion (dB)

Noise (@ f_max) (dB)

-66 typ.

5

-66 typ.

5

Max

-63

-69

-66

Max

7

5.5

Total current consumption (mA)

Frequency range (MHz)

Typ

395

450

440

Range

40 - 750

40 - 870

40 - 1003

Optical receiver

Parameters

BGO807C

BGO807CE

Responsivity (R_min

)

Min

Range

Max

800

0 - 2

-71

800

0 - 2

-69

Slope cable equivalent (dB)

Composite triple beat (dB)

Composite 2nd order distortion (dB)

Noise (@ f_max) (dB)

Typ

-54

-53

Max

8.5

Total current consumption (mA)

Frequency range (MHz)

Connector

Typ

190

Range

40 - 870

- / SC0 / FC0

NXP Semiconductors RF Manual 16^thedition

51

2.2.2ꢀ Highlyꢀefficientꢀline-upꢀofꢀ1ꢀGHzꢀGaAsꢀmodulesꢀforꢀsustainableꢀCATVꢀnetworks

NXP high gain power doublers CGD104xHi and push-pulls CGY104

Designed for 1 GHz “sustainable networks,” these high-performance GaAs devices enable extended

bandwidth and higher data rates. They deliver increased network capacity and make way for high-end

services like HDTV, VoIP, and digital simulcasting.

New CATV GaAs platform layout

Key features

`Excellent linearity, stability, and reliability

`High power gain for power doublers

`Extremely low noise

The NXP power doublers CGD104xH and CGD104xHi are ideal

for use in line extenders and trunk amplifiers. They support

fiber deep-optical-node applications (N+0/1/2), delivering

the highest output power on the market today. The GaAs HFET

die process delivers high gain, excellent CTB and CSO ratings,

and lower current.

`Dark Green products

`GaAs HFET dies for high-end applications

`Rugged construction

`Superior levels of ESD protection

`Integrated ringwave protection

`Design optimized for digital channel loading

`Temperature compensated gain response

`Optimized heat management

The new NXP CGY104x push-pull family is the first line-up on

the market to combine very low noise, best-in-class distortion

parameters, and low, “carbon footprint” capabilities. It delivers

the best performance for the lowest power consumption,

so it reduces OPEX and CO₂emissions

`Excellent temperature resistance

Key benefits

All of NXP’s 1 GHz solutions are designed for durability and

offer superior ruggedness, an extended temperature range,

high-power overstress capabilities, and extremely high ESD

levels. As a result, they also reduce the cost of ownership.

`Simple upgrade to 1-GHz capable networks

`Low total cost of ownership

`High power-stress capability

`Highly automated assembly

The GaAs die is inserted in an HVQFN package that is then

mounted on thermal vias that manage heat transfer to the

heat sink. Temperature-control circuitry keeps the module's

high performance stable over a wide range of temperature.

Assembly is fully automated and requires almost no human

intervention, so repeatability remains very high.

Key applications

`Hybrid Fiber Coax (HFC) applications

`Line extenders

`Trunk amplifiers

`Fiber deep-optical-node (N+0/1/2)

`Bridgers

52

NXP Semiconductors RF Manual 16^thedition

Upcoming products

Additional push-pulls, currently under development, will

extend the capabilities of the power doublers even further,

supporting almost all modern HFC applications. The push-pull

CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of

23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of

32 dB. NXP is also developing a new, highly integrated power

doubler. The CGD1046Hi will deliver, in one IC, a 26 dB power

gain with 60 dBmV output power and excellent ESD protection,

for the ultimate in high-quality, distortionless devices.

CATV 1 GHz power doublers

CATVꢀ1ꢀꢀGHzꢀpowerꢀdoublers

Parameters

CGD1040Hi

CGD1042H

CGD1042Hi

CGD1044H

CGD1044Hi

CGD1046Hi

Power gain (dB)

Typ

21

1.5

23

1.5

23

1.5

25

1.5

27

0.5 - 2.0

-73

Slope cable equivalent (dB)

Composite triple beat (dB)

Composite 2^ndorder distortion (dB)

Noise (@ f_max) (dB)

Typ

1

-69

Typ

-69

Typ

-68

Max

Typ

6

5

Total current consumption (mA)

Frequency range (MHz)

440

450

440

450

440

460

40 - 1003

Range

CATV 1 GHz push-pulls

CATVꢀ1ꢀGHzꢀpush-pulls

Parameters

CGY1041

CGY1043

CGY1047

CGY1049

CGY1032

Power gain (dB)

Typ

22

24

28

2

30

1.6

33

1.8

Slope cable equivalent (dB)

Composite triple beat (dB)

Composite 2^ndorder distortion (dB)

Noise (@ f_max) (dB)

Typ

2

-62

2

-62

Typ

-64

-62

Typ

-64

-66

-64

Max

Typ

5

4.5

5

Total current consumption (mA)

Frequency range (MHz)

250

265

Range

40 - 1003

CGD104xHi

PAD

OUT

H

L

port 1

CGD104xHi

PAD

OUT

H

L

port 2

EQ

PAD

CGD104xHi

PAD

OUT

RF switch

H

L

port 3

(N + 1)

CGD104xHi

PAD

OUT

H

L

port 4

bra822

An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi

NXP Semiconductors RF Manual 16^thedition

53

2.3ꢀTVꢀandꢀsatellite

2.3.1ꢀ LNAsꢀwithꢀprogrammableꢀgainꢀ&ꢀbypassꢀoptionꢀforꢀimprovedꢀtunerꢀperformanceꢀ

NXP LNAs BGU703x &BGU704x for TVs/STBs

Designed for high linearity and low noise, these 3.3 and 5 V wideband LNAs support multi-tuner applications

in TVs, DVR/PVRs, and STBs operating between 40 MHz and 1 GHZ. A unique programmable gain with

bypass mode compensates for tuner switch signal loss (important in multi-tuner systems), and improves

overall system performance by 7 to 10 dB.

Key features

NXP’s BGU703x and BGU704x low-noise ampliﬁers (LNAs)

upgrade overall picture quality with improved signal handling

(NF, dynamic range), while reducing the number of external

components.



Internally biased

Fixed G_p= 10 dB: BGU7031 (5 V), BGU7041 (3.3 V), and

Fixed G_p= 14 dB: BGU7044 (3.3 V)

Programmable between G_p= 10 dB and



bypass: BGU7032 (5 V), BGU7042 (3.3 V), and programmable Produced in NXP’s own QUBiC4+ Si BiCMOS process, they

between G_p= 14 dB and bypass: BGU7045 (3.3 V)

Programmable between G_p= 10 dB, 5 dB and bypass:

BGU7033 (5 V)

improve signal handling by compensating for the signal loss at

the tuner switch. This can improve system performance by as

much as 7 to 10 dB.



Flat gain between 40 MHz and 1 GHz

Output power at 1 dB gain compression (P_{L(1 dB)}) ranging

from 9 to 14 dBm

The BGU7031, BGU7041, and BGU7044 are LNAs with ﬁxed gain.

The BGU7032, BGU7042, and BGU7045 have an additional

bypass mode, and the BGU7033 adds two gain levels along

with the bypass mode. In bypass mode, the devices consume

less than 5 mA of current. Integrated biasing and 75 Ω

matching reduces footprint by eliminating as many as 15

components compared to discrete solutions.



Noise ﬁgure as low as 2.8 dB

High linearity with an OIP3 of 29 dBm

75 Ω input and output impedance

Power-down during bypass mode

ESD protection >2 kV HBM, >1.5 kV CDM on all pins

Key trends

All the devices can be used with discrete or Si can tuners, as

well as with on-board tuners. They deliver more robust ESD

performance compared to GaAs solutions, withstanding >2 kV

human body model (HBM) and >1.5 kV charged device model

(CDM).



Multiple tuners in TV, DVR/PVR, and set-top box

applications, requiring improved signal handling

Use of 3.3 V Si tuner ICs, perfect match with our 3.3 V LNAs

(BGU704x)



Applications

BGU703x evaluation board



Terrestrial and cable set-top boxes (STBs)

Silicon and can tuners

Personal and digital video recorders (PVRs and DVRs)

Home networking and in-house signal distribution

54

NXP Semiconductors RF Manual 16^thedition

LNAs for set-top boxes (75 Ω)

@

Frequencyꢀ

range

Gainꢀ⁽¹⁾

(dB)

NF

P_Lꢀ(1dB)

(dBm)

OIP3

FLꢀ⁽²⁾

(dB)

RL_out

(dB)

RL_in

Type

Package

Mode

V_CC

(V)

I_CC

(MHz)

(mA)

(dB)

(dBm)

(dB)

BGU7031

BGU7032

BGU7033

BGU7041

BGU7042

BGU7044

BGU7045

SOT363

40 - 1000

G_P10 dB

5

43

10

4.5

14

29

-0.2

12

18

G_P10 dB

5

43

4

10

-2

4.5

2.5

14

-

29

-0.2

12

8

18

8

40 - 1000

Bypass

G

_P10 dB

G_P5 dB

Bypass

5

43

4

10

5

4.5

6

14

9

29

-0.2

12

8

18

17

8

-2

2.5

-

G_P10 dB

3.3

38

10

4

12

29

-0.2

12

21

G_P10 dB

3.3

38

3

10

-2

4

12

-

29

-0.2

12

10

21

10

Bypass

2.5

G_P14 dB

3.3

34

14

2.8

13

29

-0.2

12

20

G_P14 dB

3.3

34

3

14

-2

2.8

2.5

13

-

29

27

-0.2

12

10

20

9

Bypass

Application diagram of an active splitter

with passive loop-through

Block diagram

CONVENTIONAL

TUNER OR

SILICON TUNER

BGU703x/BGU704x

VGA

surge

RF input

RF SW

BF1108 or BF1118

RF output

WB LNA

BGU7031/BGU7041/BGU7044(optional)

brb403

NXP Semiconductors RF Manual 16^thedition

55

2.3.2ꢀ CompleteꢀsatelliteꢀportfolioꢀforꢀallꢀLNBꢀarchitecturesꢀ

NXP Satellite LNB devices TFF101xHN, BFU710F/730F, and BGA28xx

Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are the latest

additions to NXP's leading portfolio for satellite LNB architectures. They are manufactured in NXP’s

groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technologies.

Fully integrated Ku-band downconverters TFF101xHN

BFU710F as mixer in Ku-band LNB

The TFF101xHN is a family of fully integrated downconverters

`Typical application: Active mixer for single-output LNB

for Ku-band LNBs. They give the best RF performance in terms `Single supply 3/5/6 V

of phase noise, gain, and noise figure at the lowest current

consumption in the market.

`Low power consumption: 2.5 mA

`LO drive < 0 dBm

`SSB noise figure < 8 dB (including BPF at the input)

`SSB conversion gain > 5 dB (including BPF at the input)

`Linearity (OIP3) > 0 dBm

Ku-band downconverter TFF101xHN/N1 for LNB

`Typical application: Universal single LNB & twin LNB

`Ultra-low current consumption: 52 mA over PVT

`Only 7 external components

`LO-RF isolation min 20 dB

`RF match better than 10 dB

`No inductors

`IF match better than 8 dB

`Single supply domain: 5 V

`Uses low-cost fundamental 25 MHz crystal

`High PL1dBo = 6 dBm / 3OIPo = 16 dBm

`Best-in-class PN < 1.4 deg RMS

- 10 kHz to 13 MHz integration bandwidth

`Multiple gain types available

BFU730F as LNA in Ku-band LNB

`Typical application: LNA2 and LNA3 for multi-output LNB

`Overall similar RF performance to GaAs pHemt LNAs

`Power consumption: 11 mA

`Single supply 3/5/6 V

- TFF1014HN/N1 36 dB

`Very high RF gain: 11.5 dB

- TFF1015HN/N1 39 dB

`Low noise figure: 1.25 dB

- TFF1017HN/N1 42 dB

`Linearity (OIP3) > 17 dBm

- TFF1018HN/N1 45 dB

`Return loss > 10 dB

`Flat gain over frequency (< 2 dBpp)

`Input & output matched 50 Ω

MMICs BGA28xx as IF amplifiers (first stage & output

stage)

`Small leadless DHVQFN16 package (2.5 x 3.5 x 0.85 mm)

For compatibility with existing designs, the series uses market

standard packages: the SOT363 and the pin-compliant

RF transistors BFU710F/730F

The BFU710F and BFU730F are wideband RF transistors that can SOT363F. The pinning is identical to NXP’s current gain

be used as an LNA or as a mixer for a DBS LNB in the Ku-band.

In either application, they deliver good noise and linearity, a

higher gain at a lower current consumption compared to their

GaAs pHEMT equivalents, and the cost advantage of silicon.

block family, and the blocks deliver similar noise figures. New

features include flatter gain, a positive gain slope, improved

P1dB vs Icc, and no necessity for an output inductor.

`Internally matched at 50 Ω

`Gain slope > 0.5 dB

BFU710F as LNA in Ku-band LNB

`Typical application: LNA2 for single-output LNB

`Overall similar RF performance to GaAs pHemt LNAs

`Power consumption: 3.5 mA

`Single supply: 3/5/6 V

`High RF gain: 13.5 dB

`Low noise figure: 1.6 dB

`Linearity (OIP3): 12 dBm

56

NXP Semiconductors RF Manual 16^thedition

`Single supply voltage: 3.3 or 5 V

`Reverse isolation: > 30 dB up to 2 GHz

`Best-in-class power vs current consumption

`Noise figure: 4 to 6 dB at 1 GHz

`Unconditionally stable (K > 1)

the most recent additions to NXP’s leading portfolio for

satellite LNB. They join the other discrete products, including

oscillators, amplifiers, and switches, to provide complete

coverage for all LNB architectures.

`High-compression-point models work without output inductor Since the ICs, transistors, and the MMICs are manufactured

`6-pin SOT363 plastic SMD package

in NXP’s industry-leading QUBiC4X SiGe:C and QUBiC4+

process, they offer better overall RF performance and are more

robust than their GaAs equivalents and offer the added cost

advantage of silicon. The process technology also enables

higher integration, for added features. NXP owns the industrial

base for production (wafer fab, test, assembly), so volume

supplies can be assured.

These products – the integrated downconverters TFF101xHN,

the wideband transistors BFU710F/730F for LNA and mixer

functionality, and the BGA28xx series of IF MMICs – are

Satellite outdoor unit, twin low noise block (LNB) with

integrated mixer/ oscillator/ downconverter

LNA3

TFF1014

SWITCHED TO

LOW-BAND

IF out 1

LNA1

LNA2

BPF

H

LNA3

shared

crystal

LNA1

LNA2

TFF1014

SWITCHED TO

HIGH-BAND

IF out 2

V

BPF

22 kHz

TONE

DETECT

3

H/V

DETECT

aaa-002896

Note: Also see section 1.3.4 Satellite outdoor unit, twin low noise block (LNB) with integrated

mixer/ oscillator/ downconverter

Fully integrated mixer/oscillator/downconverter

LB/HB/H/V detection

pHemt bias

LO oscillator control

V/T

BIAS

LIN

linear regulated 5 V

HB

Hor

0.95 ~ 1.9 GHz/

1.1 ~ 2.15 GHz

nd

2

mixer

10.7 ~ 12.75 GHz

st

BPF

1

IF amps

BFU710F

Ver

25.000 MHz

PLL/VCO

TFF101xHN

LOOP

FILTER

001aan954

NXP Semiconductors RF Manual 16^thedition

57

2.3.3ꢀ VSAT,ꢀ2-wayꢀcommunicationꢀviaꢀsatelliteꢀ

Design a Ku-/ Ka-band VSAT transceiver that meets IESS-308

with NXP's Ku-/ Ka-band RF LO generators

The TFF100xHN family are Ku-band RF PLLs, with integrated VCO intended for low phase-noise local-

oscillator (LO) circuits in Ku- & Ka-band VSAT transmitters and transceivers. Manufactured in a high-

performance SiGe:C process, these devices deliver extremely low phase noise and comply with the IESS-308

from Intelsat.

VSAT networks are commonly used to transmit narrowband

data, such as point-of-sale transactions for credit cards, or to

transmit broadband data that supports satellite Internet access

to a remote location, VoIP, or video.

The network typically consists of a dish antenna, an outdoor

unit, and an indoor unit. The outdoor unit is used for

frequency translation between RF and IF, and usually includes

a microwave-based uplink/downlink separator, a low noise

block (LNB) for receiving the downlink signals, and a block

Upconverter (BUC).

The VSAT ICs can be used to create the LO generator for a

linear BUC (meaning the IF or RF conversion is done by mixing

with an LO).

To enable precise frequency and time multiplexing, the

Features

downlink signal provides an accurate frequency reference of

`Phase noise compliant with IESS-308 (Intelsat)

10 MHz. The indoor unit frequency multiplexes this with the

`Differential input and output

uplink IF signal, and the LO signal in the BUC needs to be

`Divider settings at 16, 32, 64, 128, or 256

frequency-locked to the reference.

`Lock-detect output

`SiGe:C technology (120 GHz f_Tprocess)

The TFF100xHN ICs are housed in a 24-pin HVQFN (SOT616-1)

`HVQFN24 (SOT616-1) package

package. The pins have been assigned for optimal performance.

Three voltage domains are used to separate the block on the

Applications

IC, and two pins for each output (OUT-P and OUT-N) have been

`VSAT block upconverters

reserved to match a typical layout using a linewidth of Z = 50 Ω

`VSAT down conversion

microstrip on a 20-mil RO4003 board (1.1 mm).

`Local oscillator signal generation

The ground pins have been placed next to the reference input

and the output, and, to minimize crossings in the application,

all the supply pins are on the same side of the IC.

58

NXP Semiconductors RF Manual 16^thedition

Satellite

VSATs

HUB

Typical VSAT network

Complete LO generator for linear BUC with TFF1003HN

PLL

Outputꢀbuffer

Input

S_i

PLLꢀphaseꢀnoiseꢀ

@ꢀN=64ꢀ@ꢀ100ꢀkHz

V_CC

I_CC

f_IN(REF)

P_o

Typ

(dBm)

-5

RL_out(RF)

Type

Package

f_o(RF)

Typ

Max

(dBc/Hz)

-92

Max

(dB)

-10

Min

(dBm)

-10

(MHz)

50 - 815

(V)

3.3

(mA)

100

130

(GHz)

TFF1003HN

TFF1007HN

SOT616

12.8 - 13.05

14.62 - 15

228.78 - 234.38

-104

-3

-10

Singleꢀsupplyꢀ

Type

Application

I_ccꢀ(mA)

RFꢀgainꢀ(dB)

NFꢀ(dB)

OIP3ꢀ(dBm)

(V)

Ku-band LNA2 for single

output LNB

BFU710F

BFU730F

3.5

11

3/5/6

13.5

11.5

1.6

12

17

Ku-band LNA2 and LNA3

for multiple output LNB

3/5/6

1.25

Singleꢀsupplyꢀ

(V)

SSBꢀconversionꢀLO-RFꢀisolationꢀ

Type

Application

I_ccꢀ(mA)

LOꢀdriveꢀ

SSBꢀNFꢀ(dB)

gainꢀ(dB)

(dB)

Ku-band active mixer for

single output LNB

BFU710F

2.5

3/5/6

< 0 dBm

< 8 dB

> 5 dB

min 20

NXP Semiconductors RF Manual 16^thedition

59

2.3.4ꢀ LowꢀnoiseꢀLOꢀgeneratorsꢀforꢀmicrowaveꢀ&ꢀmmWaveꢀradiosꢀ

NXP LO generators (integrated VCO/PLL) TFF11xxxHN

Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated,

alignment-free LO generators are low-power and low-spurious solutions that simplify design-in and lower

the total cost of ownership.

These low noise local-oscillator (LO) generators, optimized

for use in many different microwave applications between

7 and 15 GHz, deliver highly accurate performance in a small

footprint. They require no alignment or frequency modification

on the production line, so they simplify manufacturing. High

integration saves board space and makes design-in easier, for

lower overall cost and faster development.

Since these ICs are manufactured in NXP’s industry-leading

QUBiC4X SiGe:C process, they offer better overall RF

performance, are more robust than their GaAs equivalents,

Features

and consume much less power. The process technology also

`TFF11xxxHN family: lowest-noise LO generators for

enables higher integration, for added features. NXP owns the

a full family in 7 to 15 GHz range

industrial base for production (wafer fab, test, assembly),

`Maximum power consumption for all types is 330 mW (typ)

so volume supplies can be assured.

`Phase-noise compliant with IESS-308 (Intelsat)

`Proven QUBiC4X SiGe:C technology (120 GHz f_Tprocess)

The TFF1003HN is the basis for the entire family of LO

`External loop filter

generators. It has VCO coverage of 12.8 to 13.05 GHz and

`Differential input and output

accepts input signals from 50 to 816 MHz. The divider can be set

`Lock-detect output

for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a

`Internally stabilized voltage reference for loop filter

stability of 2 dB. The family of LO generators is completed by

`24-pin HVQFN (SOT616-1) package

a range of 18 different devices operating in a center frequency

ranging from 7 to 15 GHz. The RF performance of all these

Applications: TFF11xxxHN family

devices is consistent with the TFF1003HN.

`Industrial/medical test and measurement equipment

`Electronic warfare (EW)

All the LO generators have low power dissipation (330 mW typ),

`Electronic countermeasures (ECM)

and all are available in a space-saving 24-pin HVQFN package.

`Point-to-point

`Point-to-multipoint

`Satellite communication/VSAT

`Radar systems

Full portfolio overview of low noise LO generators for

general microwave applications in section 3.4.4

60

NXP Semiconductors RF Manual 16^thedition

2.4ꢀPortableꢀdevices

2.4.1ꢀ TheꢀbestꢀreceptionꢀofꢀGNSSꢀsignalsꢀwithꢀtheꢀsmallestꢀfootprintꢀ

NXP SiGe:C GPS LNAs BGU700x/BGU8007

NXP's GPS low-noise amplifiers offer the best reception of weak signals because of dynamic suppression

of strong cellular and WLAN transmit signals. Moreover, as only two external components are required,

designers can save up to 50% in PCB size and 10% in component cost.

Key features

These SiGe:C low-noise ampliﬁers (LNAs) improve the

reception of GPS signals, including GloNass and Galileo.

Available in extremely small 6-pin packages, they reduce

footprint, lower cost, and enhance reception in systems that

use an active or patch antenna.



Low noise ﬁgure: 0.75 dB

System-optimized gain of 16.5 or 19 dB

Adaptive biasing dynamically suppresses strong cellular and

WLAN transmit signals, resulting in improved linearity of

10 dB better IP3 under -40 to -20 dBm jamming conditions

and effective GPS output with jammer powers up to -15 dBm

AEC-Q100 qualiﬁed (BGU7004, BGU7008) for highest

reliability in harsh conditions

GPS has become a standard feature in a very wide range of

consumer products, from personal navigation devices to digital

video cameras, watches, electric cars, and more. GPS signal

power levels are weak and below the noise ﬂoor at -155 dBm.

In many of these products, especially smart phones, strong

transmitters such as WLAN and cellular can drive the GPS LNA

into compression. When the GPS LNA is in compression, it has



Only two external components required

Small 6-pin leadless package: 1.45 x 1.0 x 0.5 mm

Key beneﬁts



Maintains optimal GPS signal reception for as long as possible lower gain, and that can worsen GPS reception. Also, when the

Signiﬁcant PCB size savings (50%)

Lower component cost (10%)

LNA is in compression, it generates intermodulation products

and harmonics from the transmitter signals, which can

overpower the weak GPS signals and lead to no GPS reception.

Applications



Smart phones, feature phones

Tablets

The NXP BGU700x/BGU8007 series use adaptive biasing

to immediately detect any output power from jammers, and

compensate by temporarily increasing the current. As a result,

optimal GPS signal reception is maintained for as long as possible.

Personal Navigation Devices (PNDs)

Digital Still Camera (DSCs)

Digital Video Camera (DVCs)

RF front-end modules (used in phones)

Complete GPS chipset modules (used in DSCs)

Automotive applications (BGU7004/8): toll collection,

emergency call

Each device in the BGU700x/BGU8007 series requires only one

input matching inductor and one supply decoupling capacitor

to complete the design. This creates a very compact design

and lowers the bill of materials. Designers can save up to 50%

in PCB size and 10% in component cost. For example,

the BGU7005 is in a 1.45 x 1 mm package with application

area at only 4.53 mm². This is 50% smaller than a comparable

solution with a 9.06 mm²application area.

NXP Semiconductors RF Manual 16^thedition

61

Application diagram

external

active

antenna

LNA

BPF

SPDT

embedded

antenna

BPF

GPS

RECEIVER

IC

001aan955

Smallest footprint

MMICꢀ*

Pins Pitch Area

SMDꢀsize

SMD'sꢀ

Appl.

SMD'sꢀ

area

Packageꢀsize

Appl.ꢀarea

Type

Package

X

Y

X

Y

mm

#ꢀ

mm mm²

#

mm

mm²

BGU7005/7

Competitor

SOT886

1.45 x 1

1.7

1.25

6

0.5

2.13

1.65

1.21

3.49

2.48

3.06

2

1.5

0.8

2.4

4.53

Wafer-level package

1.26 x 0.86

0.86 x 0.86

2 x 1.3

1.5

1.1

6

4

6

0.4

6

4

5

1.5

0.8

7.2

4.8

6

8.85

6.01

8.29

7.28

9.06

Wafer-level package

0.4

Thin small leadless package

2.25

1.65

1.75

1.55

1.5

0.5

0.48

0.5

1.4 x 1.26

1.5 x 1.5

Thin small outline non-leaded

1.75

* Includes keep-out area on PCB (a commonly used assembly rule)

SiGe:C GPS LNAs

@ 1.575 GHz

Supply

voltage

Noise

ﬁgure

Input power at 1 dB gain

compression

Input third-order intercept point

f₁= 1713 MHz, f₂= 1851 MHz

Supply current

Insertion power gain

2

V_cc

(V)

I_cc

|s₂₁

|

NF

P_L(1dB)

IP3_i

(mA)

(dB)

(dBm)

Type

Package

Min

Max Min

Typ

-

Max Min

Typ

Max Typ

BGU7003

SOT891

2.2

2.85

2.2

3

-

15

-

16

-

18.3

16.5*

20

-

0.8

0.9

-

-20

-

0

-

12

5

BGU7004^ SOT886

1.5

4.5

-14 -11

-15 -12

-

-11 -8

-14 -11

5

1

-

9

4

-

5

2

-

BGU7005

BGU7007

SOT886

-

4.5

4.8

4.6

-

16.5*

-

18.5**

19.0***

-

BGU7008^ SOT886

BGU8007 SOT886

-

5

-

0.75^#-15 -12

-

-13 -10

-

1

4

2

5

-

* 16.5 dB without jammer / 17.5 dB with jammer

** 18.5 dB without jammer / 19.5 dB with jammer

*** 19.0 dB without jammer / 20.5 dB with jammer

^ AEC-Q101 qualified (some limitations apply)

^#Evaluation board losses excluded

62

NXP Semiconductors RF Manual 16^thedition

2.5ꢀIndustrial,ꢀscientificꢀ&ꢀmedical

2.5.1ꢀ MedicalꢀapplicationsꢀdrivenꢀbyꢀRFꢀpower:ꢀFromꢀimagingꢀtoꢀcancerꢀtreatment,

aꢀflexibleꢀandꢀversatileꢀtechnologyꢀinꢀtheꢀdoctor’sꢀtoolbox

RF technology is making its way into all kinds of medical applications, ranging from the

well-known imaging techniques (MRI, EPRI) over low frequency, external heat treatment,

and electro-surgical tools, to minimally invasive endoscopic cancer treatment (RF ablation).

One clear trend is the increasing share of RF-based technologies for ablation. Another is the

trend towards higher RF frequencies (several GHz) and higher powers (> 100 W) in order to

achieve higher spatial resolution, better control, and shorter treatment times.

RF radiation is not a new technology in medicine. It is currently

used for imaging purposes in MRI (magnetic resonance imaging)

and EPRI (electron paramagnetic resonance imaging), techniques

that employ frequencies from a few megahertz to about 500 MHz.

Other well-known external heat-treatments to rejuvenate skin or

relieve muscle pain make use of frequencies around 480 kHz – not

too demanding in terms of RF. Surgical equipment to cut and

diffused metal oxide semiconductor). This technology has proven

to be powerful, efficient, and rugged in base stations, radar

systems, broadcast transmitters, and other industrial, scientific,

and medical (ISM) applications. LDMOS is available from up to

50 V supply to achieve power levels up to 1,200 W per single

device, with outstanding ruggedness and high gain and efficiency.

To drive and control the LDMOS power amplifier stages, it

simultaneously coagulate blood vessels runs off RF at about 5 MHz. takes voltage-controlled oscillators, phase locked loops, and

The latter application belongs to a class of treatment techniques

that is growing rapidly and uses RF radiation to deposit energy

locally at various parts of the body – in general to “ablate”

(remove) unwanted tissue. Inside the body, the RF energy heats

the surrounding tissue until it is desiccated and/or necrotized. The

damaged tissue will later be re-absorbed by the surrounding, living

tissue. Further application examples for RF ablation include cancer

treatment in the lung, kidney, breast, bone and liver, removal of

varicose veins, treatment of heart arrhythmia, and a growing list of

other applications that benefit from the high control and feedback

possible with RF.

medium power amplifiers. These parts of the RF signal chain are

conveniently available based on reliable and high-volume SiGe:C

(QUBiC) semiconductor technologies. Going a step further, one

can even use high-speed converters to drive the signal chain

entirely from the digital domain, for full and easy control over the

shape and modulation of the applied RF.

RF implications

These in-situ medical applications and, in general, most of the ISM

applications, usually form highly mismatched RF loads during some

part of the usage cycle. This in turn means that, without protection

or other measures, all of the "injected" RF power reflects back into

the final stage of the amplifier and needs to be dissipated in the

transistor(s), and most likely destroys the device(s) if this situation

lasts too long. LDMOS transistors are designed to be extremely

rugged and generally withstand these mismatch situations without

degrading over time.

Another advantage of RF in this context is the fact that it can be

applied via small catheters ending in antennas that deploy the RF

signal. Unlike older, direct-current techniques, the tissue is heated

only very locally around the antenna. Neighboring nerves (and the

heart) are not stimulated. This led to the development of a variety

of specialized catheters, used during minimally invasive surgery,

along with ultrasound or X-ray imaging to determine the exact

location of the RF-active part. During the treatment, the impedance

of the surrounding tissue can be monitored and the end-point

determined. With proper catheters, one can even achieve “self

limitation” due to the reduced uptake of RF energy in desiccated

tissue. Likewise, the RF frequency can be used to tune the energy

deposition zone around the catheter: the higher the frequency, the

smaller the penetration depth – and hence the volume to deposit

the RF energy – in the watery tissue.

This device ruggedness, or the ability to withstand “harsh” RF

conditions in general, be it mismatch or extremely short pulse rise

and fall times, is essential for reliable device performance. RF power

companies have gone to great lengths to achieve best-in-class

device ruggedness. The technologies have been hardened under

the most stringent ruggedness tests during development, which is

particularly true for the 50 V technology. Among other factors, the

base resistance of the parasitic bipolar and the drain extension of

the LDMOS device play key roles in this respect.

This ruggedness, combined with the power density and the high

efficiencies achievable, make LDMOS the preferred technology for

RF power amplifiers up to 3.8 GHz.

With the trend towards higher RF frequencies and powers, the

complexity of RF generators and the requirements for the device

technology also increase. Above 10 MHz, say, up to 3.8 GHz, the

technology of choice for power amplifiers is Si LDMOS (laterally

NXP Semiconductors RF Manual 16^thedition

63

2.5.2ꢀ ꢀRF-drivenꢀplasmaꢀlighting:

Theꢀnextꢀrevolutionꢀinꢀlightꢀsourcesꢀareꢀpoweredꢀbyꢀsolid-stateꢀRFꢀtechnology

Recent developments in RF power technology, such as improved cost structure, ruggedness, and power levels

of up to 1200 W per device, have enabled a breakthrough light source technology, called ‘RF plasma lighting’.

All RF plasma lighting sources make use of a small, electrode-less quartz lightbulb that contains argon gas

and metal halide mixtures. The bulb is powered by direct RF radiation, which ignites the gas mixtures to

create and power a bright plasma, the color of which can be tuned by the composition of its constituents.

This technology works without any additional electrodes in

the bulb, unlike standard high-intensity discharge lamps.

No electrodes means very long operating lifetimes, since

the contamination and wire erosion that lead to decreased

efficiency and eventual lamp failure are precluded. The RF

light source lives up to 50,000 hrs when it reaches 50% of its

original light output. Typical high-intensity discharge lamps, by

comparison, achieve 20,000 hrs operating life. Another strong

point of the plasma light is its efficiency: 1 W of RF power is

converted to 130-140 lm of light. This leads to very compact,

very bright lamps that easily emit 10,000 to 20,000 lm of white

light with a close-to-sunlight color rendition.

The plasma light source is among the brightest and most

efficient available to date and boasts a very long life time.

Important to note is the high brightness per bulb: much

brighter than LEDs, for example. Consequently, it takes

multiple LEDs to generate the light output of a single plasma

light source. Hence, LED luminaries for street lighting will be

considerably larger than those for plasma light sources.

RF implications

The RF plasma lighting sources can operate at a wide range of RF

frequencies, but initial applications typically focus at frequencies

of around a few hundred megahertz. At these frequencies both

the 28 and 50 V LDMOS technologies can be used, yielding

high efficiency values of 70% to more than 80% and low-heat

dissipation making compact plasma lamp designs possible.

The key enabler for the RF light source is RF technology,

based on Si LDMOS RF power transistors. LDMOS technology

operating at 28 V is the leading RF power technology for cellular

base stations or broadcast transmitters as final amplifier stages

in the frequency range between a few MHz up to 3.8 GHz.

Recently, another LDMOS format, 50 V LDMOS, has emerged

for use in broadcast, ISM, defense and avionics applications.

It combines high power density to achieve power levels up to

1,200 W per single device and outstanding ruggedness, with

high gain and efficiency at frequencies of up to 1.5 GHz.

The RF-driven plasma light is a perfect example of novel

applications that can be powered by RF energy in the

industrial, scientific, and medical (ISM) realm. Established

technologies use RF to pump a gas discharge in a laser cavity.

These "gas discharge" applications and, in general, most of

the ISM applications, typically form highly mismatched RF

loads during some part of the usage cycle. In the case of

gas discharges, for example, the gas cavity acts as an "open

circuit" during switch-on. This in turn means that without

protection or other measures, all of the "injected" RF power

reflected back into the final stage of the amplifier needs to

be dissipated in the transistor(s) right there and most likely

destroys the device(s) if this situation lasts too long. After the

discharge strikes, the load impedance reverts to "matched,"

eventually, and the transistor sees an acceptable load.

Obviously, these mismatched conditions occur every time the

plasma is "switched on,” exerting strain on the finals. LDMOS

transistors are designed to be extremely rugged and generally

withstand these mismatch situations without degrading over

time.

Comparison of lighting technologies

The table below summarizes currently available technologies that

generate bright light with varying degrees of efficiency. It lists a

few key parameters, including lifetime, luminous flux, efficacy, color

rendition index, color temperature, start-up time, and re-strike time

(time to start after switch-off from normal operation).

Luminousꢀ

flux

(klm)

Colorꢀ

temperature

(K)

Start-up Re-strike

Lifetimeꢀ

(hrs)

Efficacy

(lm/W) rendering

Colorꢀ

Type

time

(s)

time

(s)

Incandescent 2,000

1,700

3,000

130

10 to 17

115

100

3200

0.1

0.3

0.1

Fluorescent

LED

10,500

25,000

51 to 76 2940 to 6430

30 6000

60 to 100

HID (high-

intensity

20,000

50,000

25,000 65 to 115 40 to 94 4000 to 5400

25,000 100 to140 70 to 94 4000 to 5500

60

30

480

25

discharge)

This ruggedness, combined with the high power density and

efficiency achievable, make LDMOS the preferred technology

for RF lighting and other equally demanding applications in the

ISM realm.

RF plasma

Table 1: Comparison of light generation. Note: numbers are only valid for a

qualitative comparison. Source: www.wikipedia.org and references therein.

64

NXP Semiconductors RF Manual 16^thedition

2.5.3ꢀ QUBiC4ꢀSiꢀandꢀSiGe:CꢀtransistorsꢀforꢀanyꢀRFꢀfunction

NXP wideband transistors BFU6x0F & BFU7x0F

These next-generation devices offer the best RF noise ﬁgure versus gain performance, drawing the

lowest current. This performance allows for better signal reception at low power and enables RF

receivers to operate more robustly in noisy environments.

Key features

can be used as low-noise ampliﬁers, while the BFUx60F

and BFUx90F can be used as high-linearity and high-output

ampliﬁers. Other options include using these transistors as



40/110 GHz transition frequency allows for applications

up to 18 GHz and beyond



High gain of 13.5 dB at 12 GHz with a low noise ﬁgure of 1.45 dB buffer ampliﬁers, mixers, and oscillators.

High linearity of 34 dBm (OIP3) at 1.8 GHz

Consuming only 3 mA to generate 13.5 dB gain at 12 GHz

Plastic surface-mount SOT343F package for high

performance and easy manufacturing

Higher transition frequencies (40 to 110 GHz) enable higher

application frequencies (24/77 GHz car radar, 18 GHz Ka band,

3.5-3.7 WiMas, etc.), and the devices meet the low current

requirements of wideband applications.

Applications



Wideband applications that require

- Low-noise ampliﬁers

- High linearity and high output ampliﬁers

- Buffer ampliﬁers

As a result, these devices are ideal for use in a very wide

range of applications: second and third LNA stage and

mixer stage in DBS LNBs, Ka/Ku band DROs, satellite radio

(SDARS) LNA, C-band/X-band high-output buffer ampliﬁers,

AMR, WLAN/WiFi, ZigBee, Bluetooth, FM radio, GPS, cellular

(LTE, UMTS), mobile TV, RKE, high-linearity applications, low

current battery-equipped applications, low-noise ampliﬁers for

microwave communications systems, medium output power

applications, microwave driver/buffer applications, and more.

- Mixers

- Oscillators

The devices in this family of sixth- (Si) and seventh- (SiGe:C)

generation RF transistors can be used to perform nearly any RF

function. For example, the BFUx10F, BFUx30F, BFU725/N1

Selection guide – function

Function

LNAs,ꢀmixers,ꢀfrequencyꢀmultipliers,ꢀbuffers

12ꢀGHzꢀ–ꢀꢀ

High-linearity,ꢀhigh-outputꢀampliﬁersꢀ&ꢀdrivers

Oscillators

ꢀ6ꢀGHzꢀ–ꢀ12ꢀGHz

ꢀX,ꢀKuꢀlow

Frequencyꢀ

range

12ꢀGHzꢀ–ꢀꢀ

+18ꢀGHzꢀ

<6ꢀGHz

6ꢀGHzꢀ–ꢀ12ꢀGHzꢀ

<6ꢀGHz

L,S,Cꢀ

6ꢀGHzꢀ–ꢀ12ꢀGHzꢀ 12ꢀGHzꢀ–ꢀ18ꢀGHzꢀ

<6ꢀGHz

L,S,Cꢀ

+18ꢀGHzꢀ

Band

Typeꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

L,S,Cꢀ

X,ꢀKuꢀlowꢀ

Kuꢀhigh,ꢀKaꢀ

X,ꢀKuꢀlowꢀ

Kuꢀhigh

Kuꢀhigh,ꢀKa

BFU610F

BFU630F

BFU660F

BFU690F

BFU725F/N1

BFU710F

BFU730F

BFU760F

BFU790F

•

Red = application note available on NXP.com

Selection guide – speciﬁcation

BFU610F

BFU630F

BFU660F

BFU690F

BFU710F

SOT343F DFP4

6^th

7^th

15

21

18

43

55

45

25

5.5

2.8

10

30

60

100

10

40

30

70

100

136 NPN

200 NPN 0.85

225 NPN

230 NPN

136 NPN 0.85

136 NPN

197 NPN

220 NPN

234 NPN

1.1

2.4

1.5

5.8

1.5

2

3

6

15

2

5

12

20

2

1.7

1.3

1.2

0.7

1.45

1.1

1.3

0.5

5.8

2.4

12

2.4

2

3

6

15

2

5

12

20

2

3

5.8

10

30

60

70

5

25

15

30

60

1.5

2.5

4

2.5

2

2.5

18

27.5

28

33

19.5

19

29

33

34

5.8

2.4

5.8

2.4

10

30

40

70

10

25

20

30

1.5

2.5

4

1.5

2

2.5

12.5

18.5

20

4.5

8

12.5

18.5

19

5.8

2.4

5.8

2.4

0.6

BFU725F/N1 SOT343F DFP4

0.7

0.8

0.4

BFU730F

BFU760F

BFU790F

SOT343F DFP4

NXP Semiconductors RF Manual 16^thedition

65

2.5.4ꢀ Buildingꢀonꢀdecadesꢀofꢀinnovationꢀinꢀmicrowaveꢀandꢀradar

NXP builds on more than 50 years of history in semiconductor technology and component design. For more

than three decades we have led in providing high-performance RF technologies for microwave applications.

The company has built a strong position in the field of RF small-signal and power transistors for microwave

amplifiers with best-in-class Si devices and processing technologies.

We were the first semiconductor company to supply S-band

transistors (2700 to 3500 MHz) based on laterally diffused

metal-oxide-silicon (LDMOS). To further strengthen our

position towards the future, we are currently developing

new high-power and high-bandwidth technologies based on

gallium nitride (GaN) material.

Another enabling technology is NXP’s BICMOS process

QUBiC, which is available in several variants with f_Tup to

200 GHz, each specialized to address specific small-signal

RF applications.

Features

The product portfolio encompasses:

- Low-noise amplifiers (LNAs)

- Variable-gain amplifiers (VGAs)

- Mixers

`Lowest noise LO generators for 7 to 15 GHz range

`Maximum power consumption for all types, typical 330 mW

`Phase-noise compliant with IESS-308 (Intelsat)

`Proven QUBiC4X SiGe:C technology (120 GHz f_Tprocess)

`External loop ꢀlter

- Local oscillators (LOs)

- LO generators

`Differential input and output

`Lock-detect output

NXP now also focuses on architectural breakthroughs and

has developed highly integrated products for microwave and

millimeter wave. One example is a family of LO generators

from 7 to 15 GHz with integrated PLL and VCO. Another

example is an integrated RF power module in S-band

(3.1-3.5 GHz) at 200 W.

`Internally stabilized voltage reference for loop filter

RF power product highlight

The BLS6G2933P-200 is the first LDMOS-based, industry-

standard pallet produced by NXP. This pallet offers more than

40% efficiency and includes the complete bias network for

S-band applications.

RF small-signal product highlight

Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process

technology, these highly integrated, alignment-free LO

generators TFF1xxxHN are low-power, low-spurious solutions

that simplify design-in and lower the total cost of ownership.

66

NXP Semiconductors RF Manual 16^thedition

Microwave applications and bands of operation

Features

System

Frequency

`Reduces component count and considerably simplifies radar

system design

VHF and UHF

<1 GHz

L-band

1200 - 1400 MHz

2700 - 3500 MHz

8000 - 12000 MHz

`P1 dB output power 200 W

S-band

X-band

`Efficiency > 40%

Commercialꢀavionics

DME (Distance Measuring Equipment)

Transponders

`Industry-standard footprint

978 - 1215 MHz

`50 Ω in/out matched for entire bandwidth

`Lightweight heat sink included

Mode A / Mode S / Mode C / TCAS

Militaryꢀavionics

1030 - 1090 MHz

`The advantages of LDMOS over Bipolar

- Higher gain and better efficiency

- Better ruggedness – overdrive without risk to 5 dB

- Improved pulse droop and insertion phase

- Consistent performance – no tuning required

- Improved thermal characteristics – no thermal runaway

- Non-toxic packaging and RoHS-compliance

IFF transponders (Identification, Friend or Foe)

TACAN (Tactical Air Navigation)

1030 - 1090 MHz

960 - 1215 MHz

JTIDS / MIDS

(Joint Tactical Information Distribution System)

960 - 1215 MHz

Marine radar

9300 - 9500 MHz

For a complete list of products, see the respective small-

signal and power microwave pages in chapter 3

NXP Semiconductors RF Manual 16^thedition

67

2.5.5ꢀꢀ Digitalꢀbroadcastingꢀatꢀitsꢀbestꢀ

The BLF881 / BLF888A transistor line-up enables today’s most powerful and

efficient digital broadcast transmitter applications

BLF881

Key features and benefits

This transistor is based on NXP’s 50 V LDMOS technology and

features 120 W RF output power for broadcast transmitter and

industrial applications. An unmatched device, the BLF881 can be

used in the HF to 1 GHz range. The excellent ruggedness and

broadband performance of this device make it ideal for digital

transmitter applications – either on its own or as a driver in

combination with the high-power transistor BLF888A.

`Excellent efficiency and reliability

`Highest power levels in the market

`Best-in-class ruggedness designed into all devices

`Best broadband performance

`Easy power control

`Best-in-class design support

`Low thermal resistance design for unrivalled reliability

`Advanced flange material for optimum thermal behavior

and reliability

The BLF881 is also available in an earless version, the BLF881S,

which enables an even more compact PCB design.

`Designed for broadband operation (470 to 860 MHz)

Key applications

BLF888A

`Analog and digital TV transmitters

Running from a 50 V supply voltage, the BLF888A is a

600 W LDMOS RF power transistor for broadcast transmitter

and industrial applications. Being a matched device, the

BLF888A is optimized for digital signal broadcasting and

can deliver 120 W average DVB-T output power over the full

UHF band from 470 MHz to 860 MHz with 20 dB power gain

and 31% drain efficiency. The excellent ruggedness of this

transistor (it withstands a VSWR in excess of 40:1) makes it the

ultimate choice as final stage for digital transmitter applications

– ideally accompanied by a BLF881 as the driver. This device

is also available in an earless package, denoted BLF888AS, to

enable surface-mount assembly processes and take optimum

advantage of the very low thermal resistance of the package.

typ. 0.5 kW

DVB-T

Driver stages

8× final

typ. 5 kW DVB-T

output power

TV exciter

DVB-T

harmonic

filter

power

monitor

amplifiers

brb339

Type

Product

f_minꢀ(MHz)

f_maxꢀ(MHz)

P1dBꢀ(W)

Matching

VDSꢀ(V)

P_Lꢀ(W)

η_Dꢀ(%)

G_pꢀ(dB)

Testꢀsignal Package

BLF642

BLF884P(S)

BLF879P

BLF888A(S)

BLF888B(S)

BLF881(S)

Driver

1

1400

860

35

-

I

-

32

50

42

50

35

63

46

47

46

49

19

21

CW

SOT467C

SOT1121

SOT539A

SOT539

SOT467

470

1

300

500

600

140

150

200

250

140

Final

1000

68

NXP Semiconductors RF Manual 16^thedition

2.5.6ꢀꢀ Settingꢀtheꢀbenchmarkꢀforꢀultraꢀlow-powerꢀandꢀhigh-performanceꢀwirelessꢀconnectivityꢀsolutionsꢀ

NXPs JN5148/2 wireless microcontroller platform with chipsets, modules, and supporting software

NXP provides a complete package for the development of IEEE802.15.4-based wireless network solutions,

incorporating all the necessary hardware and software components. NXP’s JN514x range of wireless

microcontroller chips provides the optimum hardware platform for designing wireless network nodes that

combine high-performance processing and radio communications. NXP also supplies JN514x wireless

microcontrollers mounted on modules, and evaluation kits that simplify the development of custom

applications.

Products

Software

`JN5142-J01 for JenNet-IP Smart Devices, JN5148-J01 for

JenNet-IP Gateways

`JN5148-001 for JenNet and IEEE802.15.4, JN5142-001 for

RF4CE and IEEE802.15.4

`JN5148-Z01 for ZigBee applications

`JN5148-001-M00, JN5148-001-M03, JN5148-001-M04:

modules for JenNet and IEEE802.15.4

A selection of network protocol stacks, based on the industry-

standard IEEE802.15.4, is available to support the wireless

connectivity requirements of your application. These include

JenNet, JenNet-IP, and ZigBee PRO, which are provided as a

set of software libraries.

JenNet is suitable for all proprietary applications. ZigBee

PRO is used for smart energy and other applications where

ZigBee interoperability is required. JenNet-IP provides IPv6

connectivity to the end node and is rapidly emerging as a

standard for lighting and automation applications in buildings.

Key features

`Ultra low-power MCU together with an IEEE802.15.4-

compliant radio transceiver

`Enhanced 32-bit RISC processor for high performance

and low power

Evaluation kit

`On-chip ROM and RAM for storage of application,

networking stack, and software libraries

`A rich mix of analog and digital peripherals

`Low-current solution for long battery-life

`Standard-power and high-power modules

`Software Developer’s Kit (SDK), including JenNet,

JenNet-IP and ZigBee networking stacks

Key applications

`Smart lighting / smart energy / smart grid

`Utilities metering

`Home and commercial building automation and control

`Remote control

`Security systems

`Location-aware services – eg asset management

NXP Semiconductors RF Manual 16^thedition

69

2.6ꢀTechnology

2.6.1ꢀ TheꢀfirstꢀmainstreamꢀsemiconductorꢀcompanyꢀtoꢀofferꢀGaNꢀproducts

ꢀꢀ

NXP Galium-Nitride (GaN) broadband amplifiers

A disruptive technology, setting new performance boundaries for RF power amplifiers

If independent market research claims come true, GaN product

sales will exceed 300 Musd in 2014. This can only happen if GaN

is made available through mainstream semiconductor companies,

and NXP is the first to make this happen. So, what is it about GaN

and RF power applications? Simply put, GaN makes a step increase

in efficiency and power density performance over Si LDMOS in

most applications. This can be quantified in the Johnson’s Figure

of Merit (FoM) – a combination of significant RF performance

variables that has a baseline for Si at 1 and leads to a FoM for GaN

of 324. To put this into some context, GaAs, another commonly

used compound material in RF, has a FoM of 1.44. With such a high

FoM rating, GaN truly represents a breakthrough technology.

in product reliability and cost, and give our customers a high

degree of confidence in the supply chain. It's part of what's

needed to take GaN to the mainstream.

The first NXP GaN products will be unmatched broadband

amplifiers for use in applications requiring high RF performance

across a wide range of frequencies up to 3.5 GHz. NXP’s first

generation GaN process is designed for products operating

from a 50V supply voltage, delivering best-in-class efficiency

and linearity. The products will use industry-standard package

footprints enabling customers to adopt NXP’s products into

existing designs without changing the mechanical design.

GaN products are termed High-Electron Mobility Transistors

(HEMT), a name that captures one of the intrinsic benefits of

GaN: the high electron drift velocity. These transistors are

depletion-mode devices, that is, devices that are normally on,

without the need for applying a gate bias. A negative gate

bias will be needed to switch the transistors off. This biasing

is not straightforward, but at NXP, we've developed complete

solutions (not just individual components) that include a tried

and tested bias circuit. We also provide continuous application

support throughout the life of the product.

Next-generation GaN devices from NXP will be super-efficient,

enabling a breakthrough in performance for the largest RF

power market segment: cellular base stations. In turn this

technology will enable a departure from linear amplifier

topologies with the onset of switched mode power amplifier

(SMPA) concepts. NXP’s commitment to exploit the technology

in a full portfolio of products will also lead to products for higher

frequency applications up to 10 GHz.

A further advantage of GaN is that it is a very hard structure able

to withstand very high temperatures. NXP’s GaN transistors will

be specified to a maximum temperature of 250 °C, compared to

225 °C for Si LDMOS. Special packages are required to support

such high temperatures. In this area, NXP's GaN customers

benefit from our 30-year legacy in RF power products, and our

large industrial base. As a GaN supplier, we deliver excellence

GaN RF power amplifiers

Testꢀ

signal

Plannedꢀ

release

Type

f_minꢀ(MHz) f_maxꢀ(MHz) P_outꢀ(W) Matching V_DSꢀ(V)

η_Dꢀ(%)

G_pꢀ(dB)

Package

Applications

Cellular, WiMAX, ISM, avionics,

S-band, general purpose

Cellular, WiMAX, ISM, avionics,

S-band, general purpose

Cellular, WiMAX, ISM, avionics,

S-band, general purpose

CLF1G0035-50

CLF1G0035-100

CLF1G0035-200

0

3500

50

-

50

54

52

50

14.2

14.8

14.2

Pulsed SOT467

Pulsed SOT1228

Q312

Q412

Q313

100

200

Cellular, WiMAX, ISM, avionics,

CLF1G0060-10

CLF1G0060-30

0

6000

10

30

-

50

54

14

Pulsed SOT1227

Q113

S-band, general purpose

Cellular, WiMAX, ISM, avionics,

S-band, general purpose

CLF2G2536-100

CLF2G2536-300

CLF3G4060-30

CLF3G4060-350

2500

4000

3600

6000

100

300

30

I/O

28

65

55

13

Pulsed SOT1135

Pulsed SOT502

Pulsed SOT1135

Pulsed SOT502

Q413

Q114

Cellular, WiMAX, S-band

C-band

350

C-band

70

NXP Semiconductors RF Manual 16^thedition

2.6.2ꢀ CompletingꢀNXP'sꢀRFꢀpowerꢀtransistorꢀoffering:ꢀproductsꢀinꢀplasticꢀpackagesꢀ(OMP)

NXP is currently developing a complete line of overmolded plastic (OMP) RF power

transistors and MMICs with peak powers ranging from 3 to 500 W. The main benefit of

plastic packages is cost effectiveness with little or no impact on performance. The range

of plastic devices will complement the extensive range of RF power products that NXP

offers in ceramic packages for all frequency ranges and applications up to 2.45 GHz.

Products in development

`Single-stage broadband drivers in HSOP-outlines, from

3 to 10 W

`Final transistors in OMP package (SOT502-sized) ranging

from 140 to 200 W in frequency bands from 730 MHz

to 2.2 GHz

`Single-stage OMP drivers from 25 to 45 W, replacing

their ceramic equivalents for cost-sensitive applications

`Dual-stage MMICs from 30 to 60 W that can be used as

high-gain drivers or combined as low-power dual-stage

Doherty amplifiers

`Final transistors in OMP package (SOT502-sized) ranging

from 3 to 500 W in ISM frequency bands from a few MHz

up to 2.45 GHz

`Fully integrated plug-and-play Doherty PAs in a single

package (50 to 100 W)

Some of these products are available for sampling now, while

the rest of the portfolio will be rolled out throughout 2012.

RF power products in plastic packages (OMP)

f_min

(MHz)

ꢀ

f_max

(MHz)

ꢀ

P1dBꢀꢀ

(W)

Type

Matching Package

Description

BLP7G22-10

700

2000

700

2200

900

10

60

-

SOT1179

SOT1212

SOT1224

Gen7 OMP LDMOS transistor for WCDMA & GSM applications

BLM7G22S-60PB(G)

BLP7G07S-140P(G)

BLP7G09S-140P(G)

I/O

O

Gen7 LDMOS MMIC for WCDMA applications (gull-wing)

140

Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)

900

1000

O

NXP Semiconductors RF Manual 16^thedition

71

2.6.3ꢀ LookingꢀforꢀaꢀleaderꢀinꢀSiGe:C?ꢀYouꢀjustꢀfoundꢀus!ꢀ

NXP QUBiC4 process technology

NXP's innovative, high-performance SiGe:C QUBiC4 process lets customers implement more functions into

less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing

advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speed the migration from

GaAs components to silicon by enabling cutting-edge products with best-in-class low noise performance,

linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power.

QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance

upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two high-

volume, NXP-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very

low ppm in the field.

There are three QUBiC4 variants, each with its own

benefits for specific application areas

QUBiC4+

The QUBiC4X is ideal for applications that typically operate at

up to 30 GHz (f_T= 110 GHz , NF < 1.0 dB @ 10 GHz) and ultra-

low noise applications such as LNAs and mixers.

The QUBiC4+ BiCMOS process features 0.25 μm CMOS with

5 metal layers for integration of dense digital logic-based

smart functionality, a rich set of active and passive devices for

high-frequency mixed-signal designs, including thick top metal QUBiC4Xi

layers for high-quality inductors. The device set includes

35 GHz f_TNPNs with 3.8 V breakdown voltage (BVce0) and low

noise figure (NF < 1.1 dB @ 2 GHz), 5 GHz f_TVPNPs, a 28 GHz

high-voltage NPN with 5.9 V breakdown voltage, differential

and single-ended varicaps with Q-factor > 30, scalable

inductors with Q-factor > 20, 800 MHz FT lateral PNPs,

0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and

active resistors, a 270 ohm/sq. SiCr thin film resistor,

a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor,

1 to 6 fF/μm2 oxide capacitors and various other devices

including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS

transistors capacitor. The QUBiC4+ process is silicon-based

and ideal for applications up to 5 GHz (f_T= 35 GHz,

NF < 1.1 dB @ 2 GHz), as well as for medium power amplifiers

up to 33 dBm.

The QUBiC4Xi BiCMOS process further enhances the QUBiC4X

process and offers an additional feature set of devices for high-

frequency mixed-signal designs. These include 180 GHz f_T

NPNs with 1.4 V breakdown voltage and ultra-low noise figure

(NF < 0.7 dB @ 10 GHz), 0.25 μm CMOS, several resistors,

a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor.

QUBiC4Xi represents the newest SiGe:C process, with

improved f_T(> 200 GHz) and even lower noise figure

(NF < 0.6 dB @ 10 GHz). It is ideal for applications beyond

30 GHz, such as LO generators.

QUBiC4X

The QUBiC4X BiCMOS process is a SiGe:C-based extension

of the QUBiC process for high-frequency mixed-signal designs

and offers a rich set of devices, including a 110 GHz f NPN with

T

2.0 V breakdown voltage and very low noise figure (NF < 1.0 dB @

10 GHz), 0.25 μm CMOS, a variety of resistors, a 5.7 fF/μm2 oxide

capacitor, and a 5 fF/μm2 MIM capacitor.

72

NXP Semiconductors RF Manual 16^thedition

QUBiC4+

`Baseline, 0.25 µm CMOS, single poly, 5 metal

`Digital gate density 26k gates/mm²

`f_T/f_MAX= 35/80 GHz

SiGe:C

QUBiC4Xi

QUBiC4X

f / f_max= 180/200 GHz

T

`+TFR – Thin Film Resistor

`+DG – Dual Gate Oxide MOS

`+HVNPN – High Voltage NPN

SiGe:C

f / f_max=110/140 GHz

T

`+VPNP – Vertical PNP (high V_early

)

`-4ML – high-density 5fF/µm²MIM capacitor

`Wide range of active and high-quality passive devices

`Optimized for up to 5 GHz applications

+VPNP

+TFR

+DG

QUBiC4X

QUBiC4+

`SiGe:C process

`f_T/f_MAX= 110/140 GHz

`Optimized for applications up to 30 GHz

+HVNPN

-4ML

BiCMOS

f /f _max= 35/80 GHz

QUBiC4Xi

`SiGe:C process

`Improves f_T/f_maxup to 180/200 GHz

`Optimized for ultra-low noise microwave above 30 GHz

Features

QUBiC4+

QUBiC4X

QUBiC4Xi

Release for production

CMOS/bipolar

2004

2006

2008

CMOS 0.25 um, bipolar 0.4 um,

double poly, deep trench, Si

CMOS 0.25 um, bipolar LV 0.4 um,

double poly, deep trench, SiGe:C

CMOS 0.25 um, bipolar LV 0.3 um,

double poly, deep trench, SiGe:C

LV NPN f_T/F_max(GHz)

HV NPN f_T/F_max(GHz)

NPN BVce0: HV/LV **

V-PNP f_T/ BVcb0 (GHz / V)

35/80 (Si)

28/70 (Si)

110/140 (SiGe:C)

60/120 (SiGe:C)

3.2 / 2.0 V

180/200 (SiGe:C)

90/200 (SiGe:C)

2.5 / 1.4 V

5.9 / 3.8 V

5 / >9

Planned

CMOS voltage /

dual gate

2.5 / 3.3 V

2.5 V

Noise figure NPN (dB)

RFCMOS f_T(GHz)

2 GHz: 1.1

10 GHz: 1.0

10 GHz: 0.6

NMOS 58, PMOS 19

STI and DTI

5 LM, 3 µm top metal

NMOS 58, PMOS 19

STI and DTI

NMOS 58, PMOS 19

STI and DTI

Isolation (60 dB @ 10 GHz)

Interconnection

(AlCu with CMP W Plugs)

5 LM, 3 µm top metal

2 µm M4

5 LM, 3 µm top metal

NW, DN, Poly-Poly

5fF/um2 MIM

NW, DN, Poly-Poly

5fF/um2 MIM

NW, DN, Poly-Poly

5fF/um2 MIM

Capacitors

Poly (64/137/220/2K) Active (12, 57),

high-precision SiCr (270)

Poly (64/220/330/2K), Active (12, 57),

high-precision SiCr (tbd)

Poly (64/220/330/2K), Active (12, 57),

high-precision SiCr (tbd)

Resistors (Ω/sq)

Varicaps (single-ended &

differential)

1x single-ended, Q > 40

3x differential, Q 30-180

1x single-ended, Q > 40

3x differential, Q 30-180

1x single-ended, Q > 40

3x differential, Q 30-180

Inductors (1.5nH @ 2 GHz)

- scalable

Q > 21, thick metal, deep trench isolation,

high R substrate

Q > 21, thick metal, deep trench isolation,

high R substrate

Q > 21, thick metal, deep trench isolation,

high R substrate

Other devices

Mask count

LPNP, isolated NMOS, VPNP, transformers

32 (MIM) / 34 / 33 (HVNPN) / 35 (VPNP)

Isolated-NMOS, transformers

36 (MIM)

Isolated-NMOS, transformers

36 (MIM)

NXP Semiconductors RF Manual 16^thedition

73

2.6.4ꢀ High-performance,ꢀsmall-sizeꢀpackagingꢀenabledꢀbyꢀNXP'sꢀleadlessꢀpackageꢀplatformꢀꢀ

andꢀWL-CSPꢀtechnology

RF small-signal packaging is driven by two major trends which partly overlap

`Lower parasitics for better RF performance

`Smaller form factors for portable applications

To cope with these trends, NXP uses several approaches

`For non-space-restricted applications the use of flat-pack packages instead of gull-wing versions reduces the parasitic

impedance because of shorter lead length (e.g. SOT343F instead of SOT343). This results in better RF performance in

the Ku and Ka bands (13-20GHz). To reduce PCB board space, a smaller version (SOT1206) is also available.

SOT343

SOT343F

SOT1206

`For space-restricted applications there are two routes to reduce the form factor and parasitics:

- Leadless package platform

- Wafer Level Chip Scale Package (WL-CSP) technology

The leadless package (UTLP) platform (>25 variants already

released) is highly flexible with respect to package size,

package height, and I/O pitch. For example, the 6-pin

packages range in size from 1.45 x 1 x 0.5 mm with 0.5 mm

Wafer Level Chip Scale Package technology is ideally for

RF functions where the I/O pitch has to fit within the chip

area. With larger pitches and smaller designs (and thus little

effective chip area), it is more cost-effective to do the fan-out

pitch to 0.8 x 0.8 x 0.35 mm with 0.3 mm pitch. Package height using a leadless package instead of increasing the chip size.

of 0.25 mm is planned.

The absence of wires gives the lowest parasitic inductance

Because of the compact size of the design, wire lengths and

parasitic impedance are also restricted. The absence of leads

further reduces the inductance.

available.

SOT886

SOT891

SOT1208

0.65 x 0.44 x 0.29 mm (incl. 0.09 mm balls)

5 I/Os @ 0.22 mm pitch

74

NXP Semiconductors RF Manual 16^thedition

3. Products by function

NXP RF product catalog:

http://www.nxp.com/rf

3.1

New products

DEV = in development

CQS = customer qualification samples

RFS = release for supply

Expected

status

June 2012

Planned

release

Type

Application / description

Section

NEW: Wideband transistors

BFU730LX

Gen7 wideband transistor

RFS

Released

3.3.1

NEW: SiGe:C LNAs (for e.g. GPS)

BGU8007

BGU7003W

BGU6101

BGU6102

BGU6104

GPS LNA, 19.0 dB gain, AEC-Q100

General-purpose unmatched LNA for FM radio

RFS

Released

3.4.1

Unmatched wideband MMIC w/ bias enable function & wide range of supply voltage

NEW: LNAs for set-top boxes

BGU7044

BGU7045

LNA for STB tuning

RFS

Released

3.4.1

NEW: General-purpose wideband amplifiers (50 Ω gain blocks)

BGA2874

BGA2817

BGA2818

BGA2851

BGA2867

BGA2869

IF gain block 30.5 dB, 2.5 V

IF gain block 24 dB, 3 V

IF gain block 31 dB, 3 V

IF gain block 25 dB, 5 V

IF gain block 27 dB, 5 V

IF gain block 32.5 dB, 5 V

RFS

Released

3.4.1

NEW: Medium power amplifier MMICs

BGA7014

BGA7017

BGA7020

BGA7130

Medium power amplifier, 12.0 dB ,13.0 dBm P1dB, SOT89

Dev

RFS

Q4 2012

Released

3.4.1

Medium power amplifier, 13.5 dB, 16.5 dBm P1dB, SOT89

Medium power amplifier, 13.0 dB, 18.5 dBm P1dB, SOT89

Medium power amplifier, 18.0 dB, 30 dBm P1dB, SOT908

NEW: VGAs for wireless infrastructures

BGA7351

BGA7210

BGA7204

50 MHz to 250 MHz high linearity variable gain amplifier - 28 dB gain range

RFS

Released

3.4.1

400 MHz to 2750 MHz high linearity variable gain amplifier

700 MHz to 3800 MHz high linearity variable gain amplifier

NEW: LNAs for wireless infrastructures

BGU7051

BGU7052

BGU7053

BGU7060

BGU7061

BGU7062

BGU7063

LNA 900 MHz - from 0.5 to 1.5 GHz

RFS

Released

3.4.1

LNA 1.9 GHz - from 1.5 to 2.5 GHz

LNA 2.5 GHz - from 2.3 to 2.8 GHz

LNA with variable gain from 700 to 800 MHz

LNA with variable gain from 700 to 950 MHz

LNA with variable gain from 1710 to 1785 MHz

LNA with variable gain from 1920 to 1980 MHz

NXP Semiconductors RF Manual 16^thedition

75

Expected

status

June 2012

Planned

release

Type

Application / description

Section

NEW: PLL + VCO (LO generator) for wireless infrastructures

BGX7300 Rx LO generator, 400 MHz to 3 GHz

DEV

Q4 2012

3.4.2

NEW: IQ modulators for wireless infrastructures

BGX7100

BGX7101

IQ modulator, ouput power 0 dBm

IQ modulator, ouput power 4 dBm

RFS

Released

3.4.2

NEW: Dual mixers for wireless infrastructures

BGX7220

BGX7221

Dual mixer, NF 8 dB, IIP3 30 dBm, P < 1 W, 700 MHz to 1.2 GHz

Dual mixer, NF 10 dB, IIP3 23 dBm, P < 1 W, 1.7GHz to 2.7 GHz

RFS

Released

3.4.2

NEW: RF power transistors for base stations

BLF6G15L(S)-40RN

BLF6H10L(S)-160

Gen6 ceramic driver LDMOS transistor for GSM, WCDMA & LTE applications

RFS

DEV

RFS

Released

Q312

3.7.1

Gen6 ceramic high-voltage LDMOS transistor for GSM, WCDMA & LTE applications

Gen7 ceramic asymmetrical Doherty LDMOS transistor for GSM & LTE applications

Gen7 ceramic push-pull LDMOS transistor for WCDMA & LTE applications

Gen7 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing)

Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications

BLF7G20LS-260A

BLF7G24L(S)-160P

BLF7G27LS-90PG

BLF8G10L(S)-160V

BLF8G10LS-200GV

BLF8G10LS-270GV

BLF8G10L(S)-300P

BLF8G10LS-400PGV

BLF8G20L(S)-200V

BLF8G20LS-270GV

BLF8G20LS-270PGV

BLF8G22LS-160BV

BLF8G22LS-200GV

BLF8G22LS-270GV

BLF8G22LS-400PGV

BLF8G24L(S)-200P

BLF8G27LS-140G

BLF8G27LS-140V

BLF8G27LS-200PGV

BLF8G27LS-280PGV

BLM7G22S-60PB(G)

BLP7G07S-140P(G)

BLP7G09S-140P(G)

BLP7G22-10

Q412

Released

Q412

RFS

Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)

Gen8 ceramic push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)

Gen8 ceramic LDMOS transistor for GSM & LTE applications

DEV

RFS

Q412

Q312

Q412

Released

Q412

Gen8 ceramic LDMOS transistor for GSM & LTE applications (gull-wing)

Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications (gull-wing)

Gen8 ceramic LDMOS transistor for WCDMA & LTE applications

DEV

RFS

Q412

Released

Q312

Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing)

Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing)

Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications

Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing)

Gen8 ceramic LDMOS transistor for WCDMA & LTE applications

DEV

Q312

Q412

Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing)

Gen7 LDMOS MMIC for WCDMA applications (gull-wing)

Q412

Q312

Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)

Gen7 OMP LDMOS transistor for WCDMA & GSM applications

Q412

Q312

NEW: RF power transistors for broadcast / ISM applications

BLF174XR(S)

XR ceramic push-pull LDMOS transistor for ISM applications

DEV

RFS

DEV

RFS

DEV

RFS

DEV

RFS

DEV

Q312

Released

Q312

3.7.2

BLF178XR(S)

XR ceramic push-pull LDMOS transistor for FM broadcast & ISM applications

Gen6 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications

Gen7 ceramic LDMOS transistor for 2.45GHz ISM applications

BLF2425M6L(S)180P

BLF2425M7L(S)140

BLF2425M7L(S)200

BLF2425M7L(S)250P

BLF25M612(G)

BLF572XR(S)

Released

Q412

Gen7 ceramic LDMOS transistor for 2.45GHz ISM applications

Gen7 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications

Gen6 ceramic LDMOS driver transistor for 2.45 GHz ISM applications (gull-wing)

XR ceramic push-pull LDMOS transistor for ISM applications

Released

Q312

Q412

BLF574XR(S)

XR ceramic push-pull LDMOS transistor for ISM applications

Q312

BLF578XR(S)

XR ceramic push-pull LDMOS transistor for UHF broadcast & ISM applications

Ceramic push-pull LDMOS transistor for broadband applications

Released

Q312

BLF647P(S)

76

NXP Semiconductors RF Manual 16^thedition

Expected

status

June 2012

Planned

release

Type

Application / description

Section

NEW: RF power transistors for aerospace and defense

BLL6G1214LS-250

BLL6H1214LS-500

BLS6G2735L(S)-30

BLS7G2729L(S)-350P

BLS7G3135L(S)-350P

BLU6H0410L(S)-600P

Gen6 ceramic LDMOS transistor for L-band applications

RFS

DEV

RFS

DEV

RFS

Released

Q412

3.7.3

Gen6 high-voltage ceramic LDMOS transistor for L-band applications

Gen6 ceramic LDMOS driver transistor for S-band radar applications

Gen7 ceramic push-pull LDMOS transistor for S-band radar applications

Gen6 high-voltage ceramic push-pull LDMOS transistor for UHF band radar applications

Released

Q412

Released

NEW: Gallium Nitride (GaN) RF power amplifiers

CLF1G0060-10

CLF1G0060-30

CLF1G0035-50

CLF1G0035-100

Gen1 GaN broadband amplifier

DEV

Q113

Q312

Q412

3.7.4

NEW: Low-power wireless microcontrollers and networking stacks

JN5142-J01

JenNet-IP

RFS

Released

3.8

JN5142-001

JN5148-J01

JN5148-001

JN5148-Z01

JN5148-001-M00

JN5148-001-M03

JN5148-001-M04

JenNet

RF4CE / IEEE802.15.4

JenNet-IP

JenNet / IEEE802.15.4

ZigBee

JenNet / IEEE802.15.4

Networking stack

JenNet-IP

ZigBee PRO

NXP Semiconductors RF Manual 16^thedition

77

3.2

RF diodes

3.2.1 Varicap diodes

Varicap selection guide on www.nxp.com/varicaps

Easy-to-use parametric filters help you choose

the right varicap for your design.

Why choose NXP’s varicap diodes:

` Reference designs for TV and radio tuning

` Direct matching process

` Small tolerances

` Short lead time

` Complete portfolio covering broad range of frequencies and packages (including leadless)

` Reliable volume supply

VCO and FM radio tuning varicap diodes

@ f = 1 MHz

C_dC_d

r_s

typ

r_s

max

Number

of

diodes

@ f =

Config-

uration

C_d

@ V_R

=

C_d

min

@ V_R

=

@ V1 @ V2

C_d1

C_d2

min max

/

C_d1

C_d2

/

Type

Package

min typ max

typ max

=

(pF) (pF) (pF)

(V)

(pF)

(pF) (pF)

(V)

(Ω)

(MHz)

BB145B

BB156

BB198

BB199

SOD523

SOD323

SOD523

SOT23

SOD523

SOT23

SOD523

SOD323

1

2

1

2

1

SG

CC

SG

CC

SG

6.4

14.4

25

36.5

89

28.2

76

19.9

-

16

-

95

-

81

-

7.2

17.6

28.5

42.5

102

33.5

86

1

0.5

1

0.2

1

2.55

4.2

4.8

11.8

25.5

7.2

25.5

4.5

-

4.8

-

2.95

5.4

6.8

4

7.5

4

2.2

2.7

-

2.8

3.1

2.5

2.6

3.7

-

3.9

-

1

-

0.5

1

0.2

1

4

7.5

-

0.4

-

0.25

0.35

0.2

0.35

0.6

0.7

0.8

-

0.5

0.6

0.4

0.5

470

100

-

13.8

2

-

2

BB201

27.6 29.7

11.2

27.6 29.7

7.5

2.3

7.5

3.8

-

3.3

5.2

7.5

2.3

7.5

BB202^^

BB207^

BB208-02^

BB208-03^

-

23.2

1

-

5.4

1

4.5

^ Includes special design for FM car radio (CREST-IC:TEF6860)

^^ Includes special design for mobile phone tuner ICs

Type of connection:

CC:

SG:

common cathode

single

TV / VCR / DVD / HDD varicap diodes - UHF tuning

@ f = 1 MHz

r_s

typ

r_s

max

@

@ V₁@ V₂

@

N_s

=

@ f =

C_d

min

C_d

typ

C_d

max

@ V_R

=

@ V₁@ V₂

_d1/C_d2

∆C_d/

C_d

=

Type

Package

C_d1/C_d2C_d1/C_d2

min

C

=

typ

max

(pF)

(V)

(Ω)

(MHz) (pF)

(V)

Matched

BB149

BB149A

BB179

BB179B

BB179BLX

BB179LX

BB184

SOD323

SOD523

SOD882D

SOD523

1.9

1.951

1.9

2.1

-

2.1

2

2.04

2.25

2.225

2.25

2.22

2.13

28

10

25

8.2

8.45

-

8.45

6

6.3

9

7

7.3

10

10.9

10

-

10.9

-

1

2

28

10

25

-

0.75

-

0.7

470

9

30

9

2

1.8

0.5

1

2

28

10

25

10

5

0.6

0.65

1.9

1.95

1.87

1.89

5

10

BB189

2.18

Unmatched

BB135

SOD323

1.7

-

2.1

28

8.9

-

12

0.5

28

-

0.75

470

9

-

Bold = highly recommended product

78

NXP Semiconductors RF Manual 16^thedition

TV / VCR / DVD / HDD varicap diodes - VHF tuning

@ f = 1 MHz

r_s

typ

r_s

max

@ C_d

=

@ V₁

=

@ V₂

=

@ f =

C_d

min

C_d

typ

C_d

max

@ V_R

=

@ V₁

=

@ V₂

=

∆C_d/

C_d

@ N_s

=

C_d1

C_d2

/

C_d1

/

C_d2

C_d1/

C_d2

Type

Package

min

typ

max

(pF)

(V)

(Ω)

(MHz)

(pF)

(V)

Matched

BB148

BB152

BB153

BB178

BB178LX

BB182

BB187

BB187LX

Unmatched

BB131

SOD323

SOD523

SOD882D

SOD523

SOD882D

2.4

2.48

2.361

2.36

2.48

2.57

2.6

2.7

2.6

2.7

2.75

2.89

2.754

2.75

2.89

2.92

28

25

14.5

20.6

13.5

20.6

11

15

22

15

22

-

1

2

28

25

-

1

0.65

0.7

1

0.9

1.2

0.8

-

1.2

0.75

100

470

100

470

12

30

-

2

0.5

1

2

28

25

10

5

10

-

2.92

11

-

SOD323

SOD523

SOT23

0.7

4.3

-

1.055

6

28

25

12

5

-

16

6.5

0.5

3

28

25

-

3

0.7

470

200

9

25

-

BB181

BBY40

3.2.2 PIN diodes

brb407

Freq = 100 MHz, C @ V = 0 V

700

C

d

R

(fF)

rD @ 0.5 mA

rD @ 10 mA

600

BAP65LX

PIN diode selection guide on www.nxp.com/pindiodes

Easy-to-use parametric filters help you choose the right

PIN diode for your design.

500

400

300

200

100

0

BAP50LX

BAP63LX

BAP1321LX

BAP63LX

BAP51LX

BAP1321LX

BAP51LX

BAP142LX

BAP64LX

BAP142LX

BAP64LX

BAP70-02

10

BAP70-02

−1

10

2

1

10

Why choose NXP’s PIN diodes:

` Broad portfolio

r

(Ω)

D

brb408

25

Freq = 1800 MHz, Isolation @ V = 0 V

R

Isolation

(dB)

Insertion Loss @ 0.5 mA

Insertion Loss @ 10 mA

20

15

10

5

` Unrivalled performance

` Short lead time

BAP70-02

BAP70-20

BAP51LX

BAP50LX

BAP64LX

BAP50LX

BAP64LX

BAP51LX

BAP142LX

BAP1321LX

BAP63LX

` Low series inductance

` Low insertion loss

BAP63LX

BAP65LX

` Low capacitance

0

10

−2

−1

10

1

10

Insertion Loss (dB)

For more information: www.nxp.com/pindiodes

PIN diodes: typical r_D@ 1 mA ≤ 2, switching diodes

@ f = 100 MHz

@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA

@ f = 1 MHz

@ V_R= 1 V @ V_R= 20 V

@ V_R

= 0 V

Number of

diodes

V

_Rmax

(V)

IF max

(mA)

Type

Package

Config

r_D

C_d

typ

(Ω)

max

(Ω)

typ

(Ω)

max

(Ω)

typ

(Ω)

max

(Ω)

typ

(pF)

typ

(pF)

max

(pF)

typ

(pF)

max

(pF)

BAP65LX

BAP65-02

BAP65-03

BAP65-05

BAP65-05W

BAP63LX

BAP63-02

BAP63-03

BAP63-05W

SOD882D

SOD523

SOD323

SOT23

SOT323

SOD882D

SOD523

SOD323

SOT323

1

2

1

2

SG

CC

SG

CC

30

50

100

-

2.3

2.5

-

0.94

1

1.87

1.95

-

3

0.49

0.56

1.19

1.17

0.9

1.8

0.61

0.65

0.7

0.48

0.55

0.575

0.29

0.32

0.35

0.85

0.9

-

0.37

0.375

0.425

0.24

0.25

0.27

0.3

-

0.7

3.3

3.5

0.34

0.36

0.4

0.3

0.32

0.35

0.4

PIN diode: selection on isolation and insertion loss in SOD882D

ISL (isolation )

IL (Insertion loss)

f =

Type

900 MHz 1800 MHz 2450 MHz

900 MHz

1800 MHz

2450 MHz

VR =

0 V

10

VR =

0 V

5.5

10.5

14

VR =

0 V

3.9

8.3

12

IF =

0.5 mA 1 mA

10 mA 100 mA 0.5 mA 1 mA

10 mA 100 mA

BAP65LX

BAP63LX

BAP55LX

BAP1321LX

BAP142LX

BAP51LX

BAP64LX

BAP50LX

0.09

0.20

0.24

0.25

0.24

0.36

1.22

1.82

0.06

0.17

0.19

0.18

0.25

0.22

1.07

0.06

0.12

0.08

0.11

0.10

0.12

0.25

0.05

0.11

0.05

0.09

0.07

0.90

0.09

-

0.09

0.20

0.25

0.26

0.24

0.36

1.21

1.80

0.07

0.17

0.18

0.20

0.19

0.26

0.23

1.06

0.07

0.13

0.09

0.13

0.11

0.14

0.13

0.26

0.06

0.11

0.07

0.11

0.09

0.10

-

0.10

0.21

0.26

0.27

0.25

0.38

1.22

1.81

0.08

0.19

0.21

0.25

0.27

0.24

1.08

0.08

0.15

0.10

0.14

0.12

0.15

0.27

0.07

0.15

0.08

0.12

0.10

0.12

0.11

-

15.9

19

17

12

10

18

13

15

16

17.9

11

13

14

16.5

19

22

20.3

Bold = highly recommended product

NXP Semiconductors RF Manual 16^thedition

79

PIN diodes: typical r_D@ 1 mA = 2.2 - 2.4, switching diodes

@ f = 100 MHz

@ f = 1 MHz

@ V_R= 1 V @ V_R= 20 V

@ V_R

= 0 V

C_d

typ

(pF)

0.28

0.4

@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA

Number of

diodes

V

_Rmax

(V)

IF max

(mA)

Type

Package

Config

r_D

typ

(Ω)

3.3

3.4

3.3

r_D

max

(Ω)

4.5

5

r_D

typ

(Ω)

2.2

2.4

r_D

max

(Ω)

3.3

3.6

r_D

typ

(Ω)

0.8

1.2

1

r_D

max

(Ω)

1.2

1.8

C_d

typ

C_d

max

(pF)

-

0.45

0.38

-

C_d

typ

(pF)

0.18

0.25

C_d

max

(pF)

0.28

0.32

(pF)

0.23

0.35

0.375

0.27

0.22

BAP55LX

SOD882D

SOD523

SOD323

SOT23

SOD882D

1

2

1

SG

SR

SG

50

60

50

100

BAP1321-02

BAP1321-03

BAP1321-04

BAP1321LX

BAP142LX

0.4

0.42

0.32

0.25

0.275 0.325

0.21

0.16

0.28

0.26

PIN diodes: typical r_D@ 1 mA = 3.2 - 3.6, switching diodes

@ f = 100 MHz

@ f = 1 MHz

@ V_R= 1 V

@ V_R

= 0 V

C_d

typ

(pF)

0.3

0.4

@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA

@ V_R= 20 V

Number

of diodes

V

_Rmax

(V)

IF max

(mA)

Type

Package

Config

r_D

typ

(Ω)

4.9

5.5

r_D

max

(Ω)

9

-

r_D

typ

(Ω)

3.2

3.6

r_D

max

(Ω)

6.5

-

r_D

typ

(Ω)

1.4

1.5

2

r_D

max

(Ω)

2.5

-

C_d

typ

(pF)

0.22

0.3

C_d

max

(pF)

0.4

0.55

-

C_d

typ

(pF)

0.17

0.2

C_d

max

(pF)

0.3

BAP51LX

BAP51-02

BAP51-03

BAP51-04W

BAP51-05W

BAP51-06W

SOD882D

SOD523

SOD323

SOT323

1

2

SG

SR

CC

CA

60

50

100

50

0.35

-

0.3

0.2

0.3

0.4

PIN diodes: typical r_D@ 1 mA = 10, attenuator/switching diodes

@ f = 100 MHz

@ f = 1 MHz

@ V_R= 1 V @ V_R= 20 V

@ V_R

0 V

C_d

=

@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA

Number

of diodes

V

_Rmax

(V)

IF max

(mA)

Type

Package

Config

r_D

typ

(Ω)

20

31

r_D

max

(Ω)

40

r_D

typ

(Ω)

10

16

r_D

max

(Ω)

20

r_D

typ

(Ω)

2

r_D

max

(Ω)

3,8

3.8

4.4

C_d

typ

C_d

max

C_d

typ

C_d

typ

(pF)

0.52

0.48

0.52

0.48

max

(pF)

0.35

0.3*

(pF)

0.37

0.35

0.37

0.34

(pF)

0.23

0.17*

BAP64Q

SOT753

SOD523

SOD323

SOT23

SOT323

SOT23

SOT323

SOT23

SOT323

SOD882D

4

1

2

1

SR

SG

SR

CC

CA

100

175

100

175

100

175

100

60

100

-

BAP64-02

BAP64-03

BAP64-04

BAP64-04W

BAP64-05

BAP64-05W

BAP64-06

BAP64-06W

BAP64LX^

40

50

20

26

2

2.6

SG

^ = attenuator / switching diode

*= @ VR = 20 V

PIN diodes: typical r_D@ 1 mA = 14 - 16, attenuator diodes

@ f = 100 MHz

@ f = 1 MHz

@ V_R= 1 V

@ V_R

0 V

C_d

typ

(pF)

0.4

=

@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA

@ V_R= 5 V

Number

of diodes

V

_Rmax

(V)

IF max

(mA)

Type

Package

Config

r_D

typ

(Ω)

25

26

r_D

max

(Ω)

40

r_D

typ

(Ω)

14

r_D

max

(Ω)

25

r_D

typ

(Ω)

3

r_D

max

(Ω)

5

C_d

typ

(pF)

0.3

C_d

max

(pF)

0.55

0.6

0.5

0.6

C_d

typ

(pF)

0.22

0.2

0.3

0.35

0.3

C_d

max

(pF)

0.35

0.5

0.6

0.5

0.35

BAP50-02

BAP50-03

BAP50-04

BAP50-04W

BAP50-05

BAP50-05W

BAP50LX

SOD523

SOD323

SOT23

SOT323

SOT23

1

2

1

SG

SR

50

14

25

0.4

0.3

14

25

0.45

0.4

0.35

0.3

0.35

0.28

SR

14

25

CC

SG

14

25

SOT323

SOD882D

14

25

14

25

0.55

0.19

PIN diodes: typical r_D@ 1 mA = 40, attenuator diodes

@ f = 100 MHz

@ IF = 1 mA @ IF = 10 mA

@ f = 1 MHz

@ V_R= 1 V

@ IF = 0.5

mA

@ V_R

= 0 V

@ V_R= 20 V

Number

of diodes

V

_Rmax

(V)

IF max

(mA)

Type

Package

Config

r_D

typ

(Ω)

77

r_D

max

(Ω)

100

r_D

typ

(Ω)

40

r_D

max

(Ω)

50

r_D

typ

(Ω)

5.4

r_D

max

(Ω)

7

C_d

typ

(pF)

0.6

0.57

0.6

C_d

typ

(pF)

0.43

0.4

C_d

max

(pF)

-

C_d

max

(pF)

0.25

0.2

C_d

typ

(pF)

0.3

BAP70Q

SOT753

SOD523

SOD323

SOT323

SOT23

4

1

2

4

SR

SG

SR

CC

SR

50

100

BAP70-02

BAP70-03

BAP70-04W

BAP70-05

BAP70AM

77

0.25

0.3

0.4

0.2

77

0.43

0.4

0.25

0.2

0.6

0.57

0.3

0.25

SOT363

77

Bold = highly recommended product

SG = single

SR = series

CC = common cathode

CA = common anode

80

NXP Semiconductors RF Manual 16^thedition

3.2.3 Band-switch diodes

Why choose NXP’s band-switch diodes:

` Reliable volume supplier

` Short lead time

` Low series inductance

` Low insertion loss

` Low capacitance

` High reverse isolation

V

_Rmax

(V)

IF max

(mA)

r_Dmax

(Ω)

@ IF =

(mA)

@ f =

(MHz)

C_dmax

(pF)

@ V_R

(V)

=

@ f =

(MHz)

Type

Package

BA277

BA591

BA891

BAT18

SOD523

SOD323

SOD523

SOT23

35

100

0.7

2

3

5

100

200

1.2

0.9

1

6

3

1

20

3.2.4 Schottky diodes

Schottky diode selection guide on www.nxp.com/rfschottkydiodes

Easy-to-use parametric filters help you choose the right Schottky

diode for your design.

Why choose NXP’s Schottky diodes:

` Low diode capacitance

` Low forward voltage

` Single- and triple-isolated diode

` Small package

Applications

` Digital applications:

- Ultra high-speed switching

- Clamping circuits

` RF applications:

- Diode ring mixer

- RF detector

- RF voltage doubler

Low-capacitance Schottky diodes

V

_Rmax.

(V)

4

15

I_Fmax.

(mA)

30

V_Fmax.

(mV)

C_Dmax.

(pF)

Type

Package

Configuration

BAT17

PMBD353

SOT23

Single

Dual-series

Single

Triple-isolated

Single

Triple-isolated

Single

Dual-series

Dual c.c

450 @ IF = 1 mA

340 @ IF = 1 mA

1 @ VR = 0 V

PMBD354^

1PS76SB17

1PS66SB17

1PS79SB17

1PS88SB82

1PS70SB82

1PS70SB84

1PS70SB85

1PS70SB86

1PS66SB82

1PS10SB82

SOD323

SOT666

SOD523

SOT363

SOT323

SOT666

SOD882

Dual c.a.

Triple-isolated

Single

Bold = highly recommended product

^ Diodes have matched capacitance

NXP Semiconductors RF Manual 16^thedition

81

3.3

RF Bipolar transistors

3.3.1 Wideband transistors

RF wideband transistor selection guide onwww.nxp.com/rftransistors

Easy-to-use parametric filters help you choose the right RF wideband

transistor for your design.

Why choose NXP’s wideband transistors:

` Broad portfolio (1^st- 7^thgeneration)

` Short lead time

Wideband transistors

The f_T-I_Ccurve represents transition frequency (f_T)

characteristics as a function of collector current (I_C) for the seven

generations of RF wideband transistors. A group of transistors

having the same I_Cand similar f_Trepresents a curve. The curve

number matches with products in the selection tables of

this section (third column of each table), detailing their RF

characteristics.

` Smallest packages

` Volume delivery

Wideband transistors line-up per frequency

bra510

100

(33)

(37)

th

7

generation

(39)

f

T

(GHz)

(27)

(41)

(36)

(35)

(29)

(40)

(26)

th

(32)

6

5

generation

(25)

(38)

(21)

th

4

generation

(31)

(23)

(22)

10

(20)

(30)

(7)

(19)

(34)

(15)

(16)

(14)

rd

3

generation

(18)

(11)

(12)

(9)

(8)

(4)

(10)

nd

st

2

generation

(1)

(3)

1

generation

500 1000

1

0.1

0.2

0.5

1

2

5

10

20

50

100

200

I

C

(mA)

Description

Type (Figure 1)

Collector

1

2

3

4

Base

Emitter

4

3

2

3

2

4

Type/X (Figure 1)

Collector

Emitter

1

2

3

4

Base

Emitter

1

Type/XR (Figure 2)

Collector

Emitter

Figure 1

Figure 2

1

2

3

4

Base

Emitter

82

NXP Semiconductors RF Manual 16^thedition

Wideband transistors

High-linearity, high-output ampliﬁers and

drivers

Function

LNAs, mixers, frequency multipliers, buffers

Oscillators

6 GHz –

12 GHz

12 GHz –

+18 GHz

6 GHz –

12 GHz

12 GHz –

18 GHz

6 GHz –

12 GHz

12 GHz –

+18 GHz

Frequency range

<6 GHz

L,S,C

<6 GHz

L,S,C

Band

X, Ku low

Ku high, Ka

L,S,C

X, Ku low

Ku high

X, Ku low

Ku high, Ka

Type

BFU610F

BFU630F

BFU660F

BFU690F

BFU725F/N1

BFU710F

BFU730F

BFU760F

BFU790F

•

Red = application note available on NXP.com

RF power transistors for portable equipment (VHF)

BFG10

BFG10/X

BFG10W/X

BLT50

SOT143

SOT343

SOT223

SOT223H

SOT223

8

10

8

10

9.5

250

500

250

500

400

NPN

7

-

1900

1

-

3.6

1900

3.6

400

1900

3.6

2000

2100

2000

-

BLT70

-

BLT80

BLT81

-

RF wideband transistors generations 1 to 3

BFS17

BFS17W

BFT25

1

3

1

SOT23

SOT323

SOT23

1

15 25 300 NPN

-

1

-

1

-

12

-

1

-

1

4.5

3.8

500

2

1

5

1

-

1.6 15 50 300 NPN

2.3

5

6.5 30 NPN 18 500

800

BFG25A/X

BFG25AW

BFG25AW/X

BFG31

2

18

10

11

7

10

11

10

7

SOT143B

SOT343N

SOT223

SOT143B

SOT223

SOT89

5

4

5

6.5 32 NPN

6.5 500 NPN

-

18 1000 0.5

16 2000 0.5

1

1.8 1000 0.5

1

-

3

-

2

-

1000

1

-

6.5 500 NPN 16 1000 0.5

1

8

2000 0.5

800

800 100 10

1000

-

-15 -100 1000 PNP 16 500 -70 -10 12

18 150 1000 NPN 15 500 100 10 11

15 25 400 NPN 16 1000 15 10 11 2000 15 10

5.5 15 100 1000 NPN 16 500 70 10 12

-70 -10

-

BFG35

-

1000

-

BFG92A/X

BFG97

2

-

5

-

10

-

2000

5

-

10

-

800

-

70 10

-

50 10 3.3

30

-

BFQ149

BFQ18A

BFQ19

5

4

-15 -100 1000 PNP 12 500 -50 -10

18 150 1000 NPN

-

3.75 500 -50 -10

-

SOT89

-

SOT89

5.5 15 100 1000 NPN 11.5 500 50 10 7.5

800

11.5 800

500

800

2000

1000

800

50 10

-

BFR106

SOT23

5

15 100 500 NPN

15 25 300 NPN 14 1000 15 10

-

6

3.5

3

2

30

5

6

-

BFR92A

BFR92AW

BFS17A

SOT23

8

2000 15 10

10 2.1 1000

5

-

10

-

7

4

SOT323

SOT23

5

10

5

1

3

-

2000

2.8 15 25 300 NPN

-

13.5 800

13 1000 0.5

15 1000 0.5

14 10 2.5

2

-

BFS25A

BFT25A

BFT92

BFT92W

BFT93

BFT93W

18

7

SOT323

SOT23

SOT323

SOT23

SOT323

5

4

5

4

5

6.5 32 NPN

1

-

1.8 1000

1

-

1.8 1000 0.5

-

-15 -25 300 PNP 18 500 -14 -10

-

2.5

500

-5 -10

-10 -5

-

1000

-

7

-15 -35 300 PNP 17 500 -15 -10 11 1000 -15 -10 2.5

-12 -35 300 PNP 16.5 500 -30 -5 2.4

-12 -50 300 PNP 15.5 500 -30 -5 10 1000 -30 -5 2.4

3

-

-5 -10

9

-

9

3

1000 -10 -5

BFG135

3

16

15

22

14

8

SOT223

SOT143B

SOT223

SOT143B

SOT223

SOT89

SOT323

SOT23

SOT323

7

8

5

7

8

6

7

8

6

5

15 150 1000 NPN 16 500 100 10 12

800 100 10

-

BFG198

10 100 1000 NPN 18 500 50

15 200 400 NPN 13 900 80

8

4

15

800

50

8

4

BFG590

7.5 2000 80

-

BFG590/X

BFG591

-

8

-

5

-

8

15 200 2000 NPN 13 900 70 12 7.5 2000 70 12

BFG67

10 50 380 NPN 17 1000 15

12 35 300 NPN 16 1000 30

8

-

10 2000 15

10 2000 30

8

1.7 1000 15

1.7 1000

2.5 2000

2.3 2000

BFG67/X

BFG93A

BFG93A/X

BFG94

5

8

12 60 700 NPN

-

13.5 1000 45 10 2.7

500

-

45 10

-

3

-

1000 45 10

-

BFQ591

BFQ67W

BFR93A

BFR94A^

BFR93AR

BFR93AW

BFR94AW^

22

14

8

15 200 2250 NPN 11 900 70 12 5.5 2000 70 12

-

10 50 300 NPN 13 1000 15

12 35 300 NPN 13 1000 30

8

7

8

2000 15

2000 30

8

1.3 1000

1.9 1000

1.5 1000

5

8

2.7 2000 15

8

3

2000

5

8

2.1 2000

8

Bold = highly recommended product ^ AEC-Q101 qualified (some limitations apply)

NXP Semiconductors RF Manual 16^thedition

83

RF wideband transistors generations 4 and 4.5

BFG505

4

19 SOT143B

19 SOT343N

19 SOT343R

20 SOT143B

20 SOT143R

20 SOT343N

21 SOT143B

21 SOT143R

21 SOT343N

21 SOT343R

21 SOT223

19 SOT363A

20 SOT363A

21 SOT89

14 SOT23

19 SOT23

19 SOT416

20 SOT23

20 SOT416

21 SOT23

19 SOT323

20 SOT323

21 SOT323

20 SOT23

9

8

9

8

15 18 150 NPN 13 2000

15 18 500 NPN 12 2000

15 70 300 NPN 13 2000 20

15 70 500 NPN 11 2000 20

15 120 400 NPN 11 2000 40

15 120 500 NPN 10 2000 40

5

6

8

3

-

8

6

8

6

8

6

1.6 900

1.6 900 20

5

6

8

3

8

6

8

6

8

6

1.9 2000 1.25

6

8

3

-

8

6

8

6

8

6

4

6

8

-

900

5

10

5

6

8

-

BFG505/X

BFG505W

BFG505W/X

BFG505W/XR

BFG520

BFG520/X

BFG520/XR

BFG520W

BFG520W/X

BFG540

BFG540/X

BFG540/XR

BFG540W

BFG540W/X

BFG540W/XR

BFG541

BFM505

BFM520

BFQ540

BFQ67

BFR505

BFR505T

BFR520

BFR520T

BFR540

BFS505

1.9 2000

1.85 2000

5

17

21

-

900 20 26 20

900 40 34 40

1.1 900

5

1.3 900 10

1.1 900

1.2 900

1.9 900 40

1.7 1000 15

1.2 900

1.2 900 1.25

1.1 900

1.3 900 10

1.2 900 1.25

2.1 2000 10

15 120 650 NPN

9

2000 40

8

18 500 NPN 10 2000

5

1

5

1.9 2000

5

-

5

-

10

-

5

70 1000 NPN

9

-

2000 20

-

4

-

15 120 1,200 NPN

10 50 300 NPN

-

8

2000 15

2.7 2000 15

1.9 2000

1.9 2000 1.25

-

15 18 150 NPN 10 2000

5

6

8

6

8

-

900

6

8

6

8

-

5

15 70 300 NPN

15 70 150 NPN

15 120 500 NPN

9

7

2000 20

2000 40

5

1.9 2000

5

17

21

4

17

21

-

900 20 26 20

900 40 34 40

2.1 2000 10

1.9 2000 1.25

15 18 150 NPN 10 2000

5

900

5

10

5

BFS520

BFS540

PBR941

PBR951

PRF947

PRF949

PRF957

15 70 300 NPN

15 120 500 NPN

9

8

2000 20

2000 40

1.1 900

1.3 900 10

5

1.9 2000

5

900 20 26 20

900 40 34 40

2.1 2000 10

10 50 360 NPN 9.5 2000 15

10 100 365 NPN 2000 30

8.5 10 50 250 NPN 10 2000 15

10 50 150 NPN 10 2000 15

8.5 10 100 270 NPN 9.2 2000 30

1.4 1000

1.3 1000

1.5 1000

1.3 1000

5

2

2000

5

-

21 SOT23

8

20 SOT323

20 SOT416

21 SOT323

2.1 2000

1.8 2000

9

BFG310/XR

4.5 30 SOT143R 14

6

10

60 NPN 18 1800

5

3

-

1

2000

1

3

1.8

8.7

3

1800

5

8.5

5

3

BFG310W/XR 4.5 30 SOT343R 14

BFG325/XR 4.5 31 SOT143R 14

BFG325W/XR 4.5 31 SOT343R 14

35 210 NPN 18.3 1800 15

1.1 2000

1800 15 19.4 15

RF wideband transistors generations 5 to 7

BFG21W

BFG403W

BFG410W

BFG424F

BFG424W

BFG425W

BFG480W

5

32 SOT343R

25 SOT343R

26 SOT343R

27 SOT343F

27 SOT343R

29 SOT343R

-

4.5 500 600 NPN 10 1900

1

3

3.6

-

1

-

5

12

-

1

-

6

-

1

-

17 4.5 3.6

22 4.5 12

25 4.5 30

16 NPN 22 2000

2

900

1

2

8

2

1.6 2000

1.2 2000

1.8 2000

1

2

8

2

1

2

900

1

2

54 NPN 21 2000 10

135 NPN 23 2000 25

135 NPN 22 2000 25

135 NPN 20 2000 25

0.9 900

0.8 900

1.2 900

2000 10 15 10

2000 25 22 25

21 4.5 250 360 NPN 16 2000 80

20 3.6 2000

1

28 80

BFU610F

BFU630F

BFU660F

BFU690F

BFU710F

BFU725F/N1

BFU730F

BFU730LX

BFU760F

BFU790F

6

7

34 SOT343F 40

35 SOT343F 40

36 SOT343F 40

37 SOT343F 40

38 SOT343F 70 2.8 10

33 SOT343F 70 2.8 40

39 SOT343F 70 2.8 30

5

10

30

50 NPN 21 5800

130 NPN 28 2400 25

8

2

0.75 2400

0.58 1500

0.6 1500 20

0.7 1500 50

0.9 5800

0.47 2400

0.56 2400

0.55 2400

0.5 1500 20

0.56 1500 50

1

5

2

1.4 5800

0.73 2400

0.75 2400 20

0.9 2400 50

1.5 12000

0.7 5800

0.8 5800

0.6 2400 20

0.7 2400 50

1

5

2

-

8

-

2

-

14

8

5

2

23 25

30 60

35 90

70 200 NPN 28.5 1500 60

100 300 NPN 25.6 1500 90

30 NPN 16.5 12000

8

2

5

2

5

14.5 8

136 NPN 18 5800 25

130 NPN 18.5 5800 25

160 NPN 13.3 5800 25

5800 25 19 25

-

20.5 25

26 12.4 2.3

23 60

24 90

-

SOT883C 53 3.0 30

40 SOT343F 70 2.8 70 200 NPN 25 2400 60

41 SOT343F 70 2.8 100 250 NPN 20.4 2400 90

2

Bold = highly recommended product

84

NXP Semiconductors RF Manual 16^thedition

3.4

RF ICs

3.4.1 RF MMIC amplifiers and mixers

RF MMIC amplifiers and mixers selection guide on www.nxp.com/mmics

Easy-to-use parametric filters help you choose the right zRF MMIC for your design.

Why choose NXP's RF MMIC amplifiers and mixers:

` Reduced RF component count

` Easy circuit design-in

` Reduced board size

` Short time-to-market

` Broad portfolio

` Volume delivery

` Short lead time

General-purpose wideband amplifiers (50 Ω)

Gp [dB]

Pl(1dB) [dBm]

NF [dB]

IP3o[dBm]

Zout

External

Inductor

Type

Package

250

MHz

500

MHz

750

MHz

250

500

750

250

MHz

500

MHz

750

MHz

250

750

MHz

Vcc (V) Is (mA)

[Ohm]

MHz

BGA2870

BGA2874

SOT363

2.5

15.6

16.0

31.2

31.1

250

31.1

31.0

950

31.0

30.6

2150

MHz

5.0

250

MHz

4.0

950

MHz

4.0

2150

MHz

3.1

3.0

250

MHz

3.2

3.1

950

MHz

3.7

3.4

2150

MHz

15.0

19.0

950

13.0

17.0

2150

MHz

50

N

MHz

BGA2800

BGA2803

BGA2748

BGA2714

BGA2801

BGA2802

BGA2815

BGA2817

BGA2819

BGM1012

BGA2816

BGA2818

BGA2819

BGA2850

BGA2851

BGA2715

BGA2717

BGA2712

BGA2866

BGA2867

BGA2709

BGA2716

BGA2776

BGA2865

BGA2868

BGA2869

BGM1013

BGM1014

SOT363

3

5

10.5

5.8

5.7

19.9

23.6

17.6

20.7

22.2

25.6

25.8

24.5

27.0

19.6

31.9

30.1

30.0

23.2

23.3

15.6

20.0

21.1

23.2

26.4

22.5

22.4

22.9

30.9

31.5

30.9

35.3

30.2

20.5

23.4

21.9

20.4

22.4

25.8

25.3

24.7

27.0

20.0

32.0

29.8

30.0

24.0

24.7

21.5

24.2

21.2

23.9

27.2

22.7

22.8

23.2

32.2

32.8

30.9

35.6

32.2

20.2

23.0

17.8

20.8

23.0

25.5

25.2

25.1

28.0

20.4

26.9

30.0

31.0

22.9

25.2

23.3

25.1

22.0

24.3

27.2

23.0

22.9

23.2

29.6

33.5

32.2

32.1

34.3

-2.0

-8.0

-10.9

-9.0

0.0

-3.0

1.0

5.0

1.0

3.4

3.7

1.7

2.4

3.8

4.2

3.7

3.9

3.6

1.9

2.2

3.8

4.1

3.8

3.9

3.2

4.8

3.2

3.3

3.1

4.1

3.2

2.6

2.3

3.9

3.8

4.0

5.3

4.9

3.9

4.0

3.9

4.6

4.2

3.7

3.4

2.4

3.0

3.9

3.6

3.7

3.8

3.3

4.9

3.2

3.3

3.4

4.0

3.0

3.1

2.9

4.3

3.9

3.7

5.1

5.5

5.3

4.0

4.1

4.0

4.9

4.2

11.0

5.0

-1.9

8.0

2.0

-1.4

0.0

9.0

6.0

10.0

15.0

11.0

13.0

8.0

14.0

8.0

50

75

N

Y

N

Y

-6.0

-9.2

-7.9

2.0

1.0

5.0

6.0

2.0

6.0

5.0

6.0

5.0

4.6

-7.8

2.0

3.0

8.0

6.0

2.1

14.3

12.5

18.2

20.0

16.0

14.6

22.0

19.9

18.0

9.1

14.0

13.0

17.0

18.0

12.0

18.0

15.0

18.0

16.0

10.0

8.0

4.9

3.2

3.5

3.0

4.2

4.0

2.6

2.3

4.2

3.9

3.7

4.3

5.5

4.7

3.8

7.0

5.0

4.0

3.0

-2.0

-5.0

-8.5

-3.1

-2.0

3.0

4.9

5.7

6.1

6.0

2.0

8.5

7.6

7.0

4.3

8.0

-3.0

-4.0

-8.0

-2.6

0.2

4.0

6.5

8.3

8.9

7.2

8.0

5.0

0.6

6.3

6.0

2.3

10.0

11.0

17.0

18.8

22.0

22.2

18.6

19.0

23.5

20.0

22.7

20.5

12.3

17.4

21.7

23.5

15.9

24.4

26.4

26.0

22.0

27.5

21.0

4.0

6.8

12.0

14.1

14.0

15.9

14.4

10.0

21.5

19.0

18.6

15.1

Y

N

Y

9.0

8.8

11.0

8.8

13.0

11.2

3.8

4.6

4.3

8.1

5.7

Y

General-purpose LNA MMICs

ESD

protection

|S21|²[dB]

Pl(1dB) [dBm]

NF_min[dB]

IP3o [dBm]

Type

Package

V_cc

(V) (mA) MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz

Is

450 900 1800 2400 5800 450 900 2400 450 900 1800 2400 5800 450 900 1800 2400 5800

kV

HBM

MHz

BGA2001

SOT343R 2.5

4.0

10.0

15.0

7.0

18.0 14.0

19.0 14.0

19.0

1.3

1.8

1.5

1.3

1.8

-7.4

-6.5 -4.8

10.0

-4.5

-

BGA2002 ⁽¹⁾SOT343R 2.5

BGA2003

BGA2011

BGA2012

SOT343R 2.5

SOT363

3

16.0

1.7

10.0

BGU7003

BGU7003W SOT886

BGU6101

BGU6102

SOT891

2.5

3

5.0

1.5

3.0

20.0

13.0 12.0

15.2

13.0 ⁽²⁾

14.0 ⁽³⁾

11.4

0.6

0.8

1.3 (2)

1.2 (3)

1.5

1

SOT1209

-11.0 -11.5 -6.5 (2) 0.8

-2.5

5.5

-2.0

6.0

6.5⁽²⁾

11.5 ⁽³⁾

3

18.5 16.5

-5.0

-5.5 0 (3)

0.7

BGU6104

SOT1209

3

6.0

22.5 18.5

12.8 ⁽⁴⁾

0.5

0.5 6.5 (4) 0.8

0.8

1.1 (4)

11.0 12.0

18.5 ⁽⁴⁾

3

⁽¹⁾AEC-Q101 qualified ⁽²⁾I_cc3 mA ⁽³⁾I_cc6 mA ⁽⁴⁾I_cc12 mA

Bold = highly recommended product Bold red = new, highly recommended product

NXP Semiconductors RF Manual 16^thedition

85

SiGe:C LNAs (for GPS and others)

@ 1.575 GHz

Supply

voltage

Insertion power

gain

Noise

ﬁgure

Input power at 1 dB gain

compression

Input third-order intercept point

f₁= 1713 MHz, f₂= 1851 MHz

Supply current

2

V_cc

I_cc

|s₂₁|

NF

P_L(1dB)

IP3_i

(V)

(mA)

(dB)

(dBm)

Type

Package

Min Max Min Typ Max Min

Typ

18.3

Max Typ

BGU7003 SOT891 2.2

BGU7004^ SOT886 1.5

BGU7005 SOT886 1.5

BGU7007 SOT886 1.5

BGU7008^ SOT886 1.5

BGU8006 WL-CSP 1.5

BGU8007 SOT886 1.5

2.85

3.1

3

-

15

-

16

-

20

-

0.8

0.9

0.6^#

-

-20

-

5

1

-

0

-

5

2

-

12

5

4.5

4.8

4.1

4.6

16.5*

-14 -11

-15 -12

-

-11 -8

-14 -11

9

4

5

-

16.5*

-

18.5**

17.5****

19.0***

-

5

-

-10

-

-8

-

8

2.2

-

0.75^#-15 -12

-13 -10

1

4

-

2

5

-

* 16.5 dB without jammer / 17.5 dB with jammer

** 18.5 dB without jammer / 19.5 dB with jammer

*** 19.0 dB without jammer / 20.5 dB with jammer

**** 17.5 dB without jammer / 19 dB with jammer

^ AEC-Q101 qualified (some limitations apply)

^#Evaluation board losses excluded

LNAs for set-top boxes (75 Ω)

@

Frequency

range

Gain ⁽¹⁾

(dB)

NF

P_{L (1dB)}

(dBm)

OIP3

FL ⁽²⁾

(dB)

RL_out

(dB)

RL_in

Type

Package

Mode

V_CC

(V)

I_CC

(MHz)

(mA)

(dB)

(dBm)

(dB)

BGU7031

BGU7032

SOT363

40 - 1000

G_P10 dB

Bypass

G_P10 dB

G_P5 dB

Bypass

G_P10 dB

Bypass

G_P14 dB

Bypass

5

43

4

43

4

38

3

34

3

10

-2

10

5

-2

10

-2

14

-2

4.5

2.5

4.5

6

2.5

4

2.5

2.8

2.5

14

-

14

9

29

27

-0.2

12

8

12

8

12

10

12

10

18

8

18

17

8

21

10

20

9

40 - 1000

BGU7033

SOT363

40 - 1000

5

-

BGU7041

BGU7042

BGU7044

BGU7045

SOT363

40 - 1000

3.3

12

-

13

-

LNAs for wireless infrastructures (50 Ω)

@ V_CC

[typ]

(V)

@ I_CC

[typ]

(mA)

frange

Gass

NF

[typ]

(dB)

0.6

0.63

0.65

0.76

0.79

0.85

0.9

21

15

7.2

1

21

15

7.2

1

P_L(1dB)

IP3_O

[typ]

(dBm)

32

33

37

35.5

35

36

25.5

22.5

4.5

2.5

25.5

22.5

4.5

2.5

25.6

21

RL_in

RL_out

[typ]

(dB)

18

17.5

18

22

21

19.5

23

19

Type

Package

[min]

(MHz)

500

750

900

1500

1850

1950

2300

2700

[max]

(MHz)

750

[typ]

(dB)

23.5

21.5

21

21.5

20

19.7

18.5

17.5

3

12

18

35

3

12

18

35

3

[typ]

(dBm)

17

16.5

15.5

14.5

13.5

13

11

7.5

-7

-12.5

11

[typ]

(dB)

27.5

26

24.5

23

22

23

26

20

24

20

24

BGU7051

SOT650-1

3.3

65

850

1500

1750

1900

2500

2800

BGU7052

BGU7053

SOT650-1

3.3

80

90

BGU7060

BGU7061

SOT1301AA

5

200

185

700

800

7.5

-7

-12.5

10.7

5.4

800

950

20.6

15

9.3

0.98

6.4

1.05

23

26

35

31

16

15

12

18

35

18

BGU7062

BGU7063

SOT1301AA

5

1710

1920

1785

1980

-7

3.4

1

5.4

0.9

-12.8

-6.4

-12.5

190

230

35

86

NXP Semiconductors RF Manual 16^thedition

General-purpose medium power amplifiers

Frequency

range

[min]

RF input

frequency

[max]

(MHz)

900

1800

900

1800

900

1800

2000

4000

2000

4000

2000

4000

940

1960

2140

2445

940

1960

2140

940

1960

2140

2445

940

@ V_CC

@ I_CC

Gain

P_L(1dB)

IP3_O

NF

Type

Package

[typ]

(V)

[typ]

(mA)

[typ]

(dB)

15.0

13.0

20.0

16.0

22.0

17.0

12.0

13.5

12.0

13.5

13.0

14.0

22.0

16.0

15.0

14.0

19.0

11.5

11.0

23.0

16.5

16.0

14.0

20.0

13.0

12.0

10.5

18.0

10.0

[typ]

(dBm)

31.0

28.0

33.0

30.0

33.0

32.0

13.0

10.0

16.5

11.5

18.5

14.0

24.0

25.5

24.5

29.0

27.5

28.0

25.0

24.5

23.5

27.5

28.5

28.0

27.5

30.0

[typ]

(dBm)

17.0

15.0

20.0

17.0

[typ]

(dB)

3.5

3.7

3.1

3.3

3

(MHz)

BGA6289

BGA6489

BGA6589

BGA7014*

BGA7017*

BGA7020*

SOT89

4.1

5.1

4.8

5

84

78

100-3000

30-6000

21.0

20.0

26.0

20.5

29.0

23.0

33.0

26.0

37.5

38.0

37.5

41.5

43.0

42.5

38.5

38.0

37.5

36.0

41.5

42.5

42.0

41.5

43.0

44.0

81

3.3

6.2

6.0

6.4

6.3

6.5

6.2

2.9

3.7

4.0

2.6

3.8

3.9

5.2

4.6

4.8

5.4

3.1

4.5

4.6

4.7

5.0

70

5

87

5

120

BGA7024

BGA7027

BGA7124

SOT89

SOT908

5

110

165

140

400 - 2700

1960

2140

2445

750

BGA7127

BGA7130

SOT908

5

180

450

400 - 2700

2140

VGAs for wireless infrastructures

Gp @ minimum Attenuation

@ V_CC

@ I_CC

f_range

NF

P_L(1dB)

IP3_O

attenuation

range

Type

Package

SOT617-3

type

single

[typ]

(V)

5

[typ]

(mA)

115

[min]

(MHz)

400

[max]

(MHz)

700

(dB)

[typ]

(dB)

7

6.5

7

6.5

7

[typ]

(dBm)

21

20.5

20

21

23

[typ]

(dBm)

38

37.5

36

34

39

37

35

27

43

46

18.5

17.5

16.5

30

29.5

29

28

31.5

30.5

30

31.5

30.5

29.5

24

700

1450

2100

2750

1400

1700

2200

2800

3800

250

BGA7204

BGA7210

1450

2100

700

1400

1700

2200

3400

50

115

185

245

280

26

18.5

22

8

6

19

17

16.5

BGA7350

BGA7351

SOT617-1

dual

50

250

28

2-stage variable-gain linear amplifier

@

@ 900 MHz

@ 1900 MHz

Limits

I_s

Frequency

range

V_s

I_s

Gain⁽¹⁾DG⁽²⁾

P_1dB

ACPR Gain⁽¹⁾DG⁽²⁾

P_1dB

ACPR

V_s

P_tot

Type

Package

(V)

3

(mA)

51

(dB)

24

(dB)

62

(dBm)

11

(dBc)

49

(dB)

23

(dB)

56

(dBm)

13

(dBc)

49

(V)

3.3

(mA)

77

(mW)

200

BGA2031/1

SOT363

800-2500

⁽¹⁾Gain = GP, power gain ⁽²⁾DG = gain control range

Wideband linear mixer

@

RF input

Frequency

range

IF output

Frequency

range

@ 880 MHz

@ 1900 MHz

Limits

I_s

(mA)

10

V_s

(V)

3

I_s

(mA)

6

Type

Package

NF Gain⁽¹⁾OIP3

V_s

(V)

4

P_tot

(mW)

40

(dB)

9

(dB) (dBm) (dB)

5

(dB) (dBm)

6

BGA2022

SOT363

800 - 2500

50 - 500

4

9

10

⁽¹⁾Gain = GP, power gain ⁽²⁾DG = gain control range

Bold = highly recommended product

Bold red = new, highly recommended product

* Check status in section 3.1, as this type is not yet released for mass production

NXP Semiconductors RF Manual 16^thedition

87

3.4.2 Wireless infrastructure ICs

Low-noise PLL + VCO (LO generator) for wireless infrastructures

Normalized

phase noise

Phase noise

@ 1MHz

Integrated RMS Programmable

@ V_CC

[typ]

(V)

@ I_CC

[typ]

(mA)

fi(ref)

[min]

phase error

output power

VCO output RF output

frequency frequency

Type

Package

[max]

[typ]

(MHz)

(dBc/Hz)

deg

(dBm)

2200 - 2750

10 - 250 2750 - 3500 68 - 4400

3500 - 4400

-134 (2.2 GHz carrier)

-133 (3.0 GHz carrier)

-131 (4.2 GHz carrier)

0.24°

@ 2.1 GHz

BGX7300*

SOT1092-2

3.3

150

-225

-5 to +5

IQ modulators for wireless infrastructure

flo

range

@ V_CC

[typ]

(V)

@ I_CC

[typ]

(mA)

flo

Po

BWmod

Nflr(o) *

[typ]

P_L(1dB)

[typ]

IP2_O

IP3_O

[typ]

SBS

CF

Type

Package

SOT616-3

[typ]

(dBm)

[typ]

(dBm)

(MHz)

(dBm/Hz)

(dBm)

(dBc)

165

173

178

184

172

180

178

182

188

750

910

-159/-158.5

-158.5/-158

-158/-158

11.5

12

71

72

69

72.5

74

62

60

71

75

71

72

75

65

29

27

26

25

28

27

26

25

55

49

47

49

51

60

53

63

49

55

57

63

50

57

-55

-50

-48

-45

-43

-51

-57

-50

-47

-45

-42

1840

1960

2140

2650

3650

750

400 -

4000

BGX7100

BGX7101

5

-0.2

400

650

-158/-158

-159/-158.5

-158.5/-158

-158/-158

910

1840

1960

2140

2650

3650

400 -

4000

4

12

-158/-158

* Without modulation/with modulation

Dual mixers for wireless infrastructure

Second-order

spurious

rejection

Local

oscillator

frequency frequency

Local

oscillator

NFSSB

single-

sideband

RF input

frequency frequency

RF input

@ V_CC

@ I_CC

IP3_i

Gconv

2RF-2LO

Type

Package

[typ]

(V)

[typ]

(mA)

[min]

[max]

(MHz)

[min]

[max]

(MHz)

[max]

(dBc)

[typ]

(dB)

[typ]

(dB)

(MHz)

(dBm)

BGX7220

BGX7221

SOT1092-2

5

330

365

700

1400

950

2700

500

1500

1150

2500

-60

10

26

25.5

8

8.5

Bold red = new, highly recommended product

* Check status in section 3.1, as this type is not yet released for mass production

88

NXP Semiconductors RF Manual 16^thedition

3.4.3 Satellite LNB RF ICs

V_cc

I

G_conv

(dB)

NF

OIP3

(dB)

LO Freq

(GHz)

Input freq

range

Integrated Phase noise

density (degrees RMS)

Type

Package

(V)

(mA)

(dB)

TFF1014HN

TFF1015HN

TFF1017HN

TFF1018HN

10.7 - 12.75

5

52

36

39

42

45

7

13

9.75 / 10.6

1.5

SOT763-1

3.4.4 Low-noise LO generators for VSAT and general microwave applications

Why choose NXP’s low-noise LO generators:

` Lowest total cost of ownership

` Alignment-free concept

` Easy circuit design-in

` Improved LO stability

Low-noise LO generators for VSAT applications

f_IN(REF)

V_CC

I_CC

PLL phase noise @ N=64,

@ 100 kHz

PLL

f_o(RF)

Output buffer

Input

Po

RL_out(RF)

S_i

Type

Package

Typ

(V)

Typ

Max

Typ

Max

(dB)

Min

(MHz)

(mA)

(dBc/Hz)

(GHz)

(dBm)

TFF1003HN

TFF1007HN

50 - 815

3.3

100

-92

12.8 - 13.05

14.62 - 15

-5

-3

-10

SOT616

230.46 - 234.38

-104

Low-noise LO generators for general microwave applications

PLL

fo(RF)

Typ

(GHz)

7

7.33

7.67

8.02

8.4

8.79

9.2

Output buffer

Input

PLL phase noise @

f_IN(REF)

V_CC

I_CC

N=64

Po

Typ

(dBm)

-5

RLout(RF)

S_i

Min

(dBm)

-10

Frequency

band

Type

Package

Typ

(V)

3.3

Typ @ 100 kHz @ 10 MHz

(mA) (dBc/Hz) (dBc/Hz)

Min

(GHz)

6.84

7.16

7.49

7.84

8.21

8.59

8.99

9.00

9.41

Max

(GHz)

7.16

7.49

7.84

8.21

8.59

8.99

9.41

9.6

Max

(dB)

-10

(MHz)

27 - 448

28 - 468

29 - 490

31 - 513

32 - 537

34 - 562

35 - 588

36-600

37 - 616

TFF11070HN*

TFF11073HN*

TFF11077HN*

TFF11080HN* SOT616

TFF11084HN* SOT616

TFF11088HN* SOT616

TFF11092HN*

TFF11094HN*

TFF11096HN*

TFF11101HN*

TFF11105HN*

TFF11110HN*

TFF11115HN*

TFF11121HN*

TFF11126HN*

TFF11132HN*

TFF11139HN*

TFF11145HN*

TFF11152HN*

SOT616

100

-95

-131

C

C. X

X

Ku

Ka

-5

SOT616

9.4

9.63

10.07

10.54

11.03

11.55

12.09

12.65

13.2

13.85

14.5

15.18

9.85

SOT616 38 - 644

9.85

10.31

10.79

11.29

11.81

12.36

12.94

13.5

14.17

14.83

15.52

-5

SOT616

40 - 674

42 - 706

44 - 738

46 - 773

10.31

10.79

11.29

11.81

12.36

12.9

13.54

14.17

14.83

SOT616 48 - 809

SOT616

51 - 846

53 - 886

55 - 927

58 - 970

-5

Bold = highly recommended product

* To be released on request, please consult your local NXP representative or authorized distributor

NXP Semiconductors RF Manual 16^thedition

89

3.5

RF MOS transistors

3.5.1 JFETs

JFET selection guide on www.nxp.com/rffets

Easy-to-use parametric filters help you choose the right junction

field effect transistor for your design.

Why choose NXP’s JFETs:

` Reliable volume supplier

` Short lead time

` Broad portfolio

N-channel junction field-effect transistors for switching

V_DS

I_G

CHARACTERISTICS

I_DSS

(mA)

V_gsoff

(V)

R_DSON

(Ω)

max

25

40

60

8

12

18

30

50

100

30

60

100

C_rs

(pF)

t_on

(ns)

t_off

(ns)

Type

Package

(V)

max

40

25

(mA)

max

50

min

50

20

8

80

40

10

20

5

max

min

4

max

min

max

5

typ

-

4

13

-

max

-

typ

-

6

35

-

max

25

50

100

-

BSR56

BSR57

BSR58

SOT23

-

100

80

-

10

6

4

10

6

4

10

5

3

10

5

3

-

2

0.8

3

2

0.5

3

1

0.5

4

2

0.5

5

PMBFJ108

PMBFJ109

PMBFJ110

PMBFJ111

PMBFJ112

PMBFJ113

PMBF4391

PMBF4392

PMBF4393

15

typ.3

3.5

25

-

40

-

20

35

50

2

-

50

25

5

150

75

30

15

3.5

-

50

P-channel junction field-effect transistors for switching

V_DS

I_G

CHARACTERISTICS

I_DSS

(mA)

V_gsoff

(V)

R_DSON

(Ω)

max

85

125

250

300

C_rs

(pF)

t_on

(ns)

t_off

(ns)

Type

Package

(V)

max

30

(mA)

max

50

min

20

7

2

1.5

max

135

70

35

20

min

5

max

min

max

typ

7

15

35

45

max

typ

15

30

35

45

max

PMBFJ174

PMBFJ175

PMBFJ176

PMBFJ177

SOT23

10

6

4

typ.4

-

3

1

0.8

30

50

2.25

90

NXP Semiconductors RF Manual 16^thedition

N-channel junction field-effect transistors for general RF applications

V_DS

I_G

CHARACTERISTICS

I_DSS

(mA)

V_gsoff

(V)

|Yfs|

(mS)

C_rs

(pF)

Type

Package

(V)

max

(mA)

max

min

max

min

max

min

max

min

max

DC, LF, and HF amplifiers

BF545A

BF545B

BF545C

BF556A

BF556B

BF556C

SOT23

30

10

2

6

12

3

6

11

6.5

15

25

7

13

18

0.4

0.5

7.5

3

4.5

6.5

-

0.8

-

Pre-amplifiers for AM tuners in car radios

BF861A

BF861B

BF861C

BF862

SOT23

25

20

10

2

6

12

10

6.5

15

25

0.2

0.5

0.8

0.3

1.0

1.5

2

12

16

20

35

20

25

30

-

2.1

2.7

-

2

typ=1.9

RF stages FM portables, car radios, main radios & mixer stages

BF510⁽¹⁾

BF511⁽¹⁾

BF512⁽¹⁾

BF513⁽¹⁾

SOT23

20

10

0.7

2.5

6

3

7

12

18

typ. 0.8

typ. 1.5

typ. 2.2

typ. 3

2.5

4

6

0.4

0.5

10

7

Low-level general-purpose amplifiers

BFR30

BFR31

SOT23

25

5

4

1

10

5

< 5

< 2.5

1

1.5

4

4.5

1.5

-

General-purpose amplifiers

BFT46 SOT23

25

5

0.2

1.5

< 1.2

> 1

1.5

-

AM input stages UHF/VHF amplifiers

PMBFJ308

PMBFJ309

PMBFJ310

PMBFJ620

SOT23

SOT363

25

50

12

24

60

30

60

1

6.5

4

6.5

> 10

10

1.3

2.5

1

2

⁽¹⁾Asymmetrical

3.5.2 MOSFETs

RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric

filters help you choose the right RF MOSFET for your design.

Why choose NXP's MOSFETs:

` Reference designs for TV tuning

` Short lead time

` Broad portfolio

` Smallest packages

` 2-in-1 FETs for tuner applications

` Reliable volume supply

` Best performance MOSFETs for TV tuning

N-channel, single MOSFETs for switching

Characteristics

C_rst_on

(pF) (ns)

max

typ.0.6

V_DS

I_D

I_DSS

(mA)

V_GS(th)

(V)

R_DSON

(Ω)

max

45

t_off

(ns)

|S_21(on)

(dB)

max

-

|

|S_21(off)

(dB)

min

-

|

MODE

2

Type

Package

(V)

max

10

(mA)

max

50

min

-

max

-

min

max

2

min

typ

-

max

1

typ

-

max

5

BSS83

SOT143

0.1

enh.

Silicon RF Switches

BF1107

BF1108

SOT23

3

10

-

100

-

7

20

22

-

2.5

3

30

depl.

depl

SOT143B

SOT143R

SOT343

SOT343R

SOT143B

SOT143R

SOT343

BF1108R

BF1108W

BF1108WR

BF1118

BF1118R

BF1118W

BF1118WR

SOT343R

Bold = highly recommended product

NXP Semiconductors RF Manual 16^thedition

91

N-channel, dual-gate MOSFETs

Characteristics

V_DS

I_D

(1)

(2)

(3)

(4)

@ 200 MHz

C_OSS

C_ig

I_DSX

(mA)

V_GS(th)

(V)

|Yfs|

(mS)

max

C_is

(pF)

typ

C_os

(pF)

typ

F @ 800 MHz VHF

UHF

Type

Package

(V)

max

(mA)

max min max

(dB)

typ

Two equal dual gate

MOSFETs in one

package

Two low-noise gain

amplifiers in one

package

Transistor A: fully

internal bias, transistor

B: partly internal bias

Internal switching

function

Transistor A: partly

internal bias, transistor

B: fully internal bias

min

max

min

With external bias

BF908

SOT143

12

20

12

40

20

40

30

3

4

-

4

2

27

25

-

20

18

-

-2

36

10

20

15

21

22

50

-

3.1

2.1

4

1.7

1.1

2

1.5

1

1.2⁽¹⁾

1⁽¹⁾

1.8

1

X

-

X

-

X

(5)

(6)

BF908R

BF908WR

BF991

SOT143R

SOT343R

SOT143

SOT143R

SOT343R

-2

-2.5

-1.3

-2.5

-2.0

-2.5

BF992

-

(7)

(8)

BF994S

BF996S

BF998

BF998R

BF998WR

-

2.5

2.3

2.1

1

0.8

1.05

1

-

Fully internal bias

BF1105

SOT143

7

30

8

16

0.3

1.2

25

-

2.2⁽³⁾

1.2⁽²⁾

1.7

X

BF1105R

BF1105WR

SOT143R

SOT343R

Partly internal bias

BF904A

SOT143

7

30

40

30

8

13

20

19

16

19

16

23

17

23

19

24

17

24

20

24

17

19

16

23

24

20

0.3

1

22

36

23

25

23

25

33

29

25

26

28

26

25

26

28

25

28

25

26

25

30

50

-

2.2

3.6

2.8⁽³⁾

2.6

1.7

2.6

1.7

2.4

1.7

2.2

1.8

2.2

2

2.1

2.2

2

2.1

1.7

2.2

2.1

1.3

2.3

1.6⁽²⁾

0.9

0.85

0.9

0.85

1.1

0.85

0.9

0.8

0.9

0.85

0.8

0.85

0.9

0.85

0.9

2

X

-

X

-

X

-

X

-

X

-

X

-

X

-

X

-

X

-

X

-

X

-

X

-

X

-

X

-

X

-

X

-

BF904AR

BF904AWR

BF909A

BF909AR

BF909AWR

BF1102(R)⁽⁴⁾

BF1201

BF1201R

BF1201WR

BF1202

BF1202R

BF1202WR

SOT143R

SOT343R

SOT143

SOT143R

SOT343R

SOT363

SOT143

SOT143R

SOT343R

SOT143

SOT143R

SOT343R

12

11

8

11

8

14

9

13

9

14

9

14

10

14

9

11

8

7

1

1.2

1.0

1

10

6

35

40

35

40

48

44

40

41

43

41

40

41

43

40

43

35

41

40

1.9

1.1

1.9

1.1

1.6

1.4

1.1

1.4

1.3

1.1

1.4

1.1

1.4

BF1203⁽⁵⁾

BF1204⁽⁴⁾

BF1206⁽⁵⁾

SOT363

(5)(7)(8)

BF1207

SOT363

SOT666

SOT363

BF1208^(5)(6)(7)

1

BF1208D^(5)(6)(7)

BF1210⁽⁵⁾⁽⁶⁾

1

BF1211

SOT143

SOT143R

SOT343

SOT143

SOT143R

SOT343

SOT363

1.0

1

BF1211R

BF1211WR

BF1212

BF1212R

BF1212WR

BF1214⁽⁴⁾

0.9

0.8

0.85

13

14

10

6

BF1218^(5)(6)(7)SOT363

1

X

N-channel, dual-gate MOSFETs for set-top boxes

Characteristics

C_is

V_DS

I_D

F @

800 MHz

(dB)

typ

X-Mod @ 40 dB

gain reduction

I_DSX

V_(th)gs

|Yfs|

C_OS

Type

Package

(V)

max

6

(mA)

max

30

(mA)

max

19.5

23

19.5

23

(V)

min

0.3

(mS)

typ

27

(pF)

typ

2.5

(pF)

typ

0.8

(dB)

typ

107

max

1

1.9

BF1215 ^(1)(2)(3)

SOT363

BF1216⁽¹⁾

BF1217

SOT363

SOT343

6

30

27

23

1.9

⁽¹⁾Two low-noise gain amplifiers in one package

⁽²⁾Transistor A: fully internal bias, transistor B: partly internal bias

⁽³⁾Internal switching function

Bold = highly recommended product

92

NXP Semiconductors RF Manual 16^thedition

3.6

RF modules

CATV module selection guide on www.nxp.com/catv

Easy-to-use parametric filters help you choose the right

CATV module for your design.

Why choose NXP’s RF modules:

` Excellent linearity, stability, and reliability

` Rugged construction

C-types (China)

` CATV push-pulls, section 3.6.2: BGY588C, BGE788C,

CGY888C

` Extremely low noise

` CATV power doublers, section 3.6.3: BGD712C, CGD982HCi,

CGD985HCi, CGD987HCi

` High power gain

` Low total cost of ownership

` CATV optical receivers, section 3.6.4: BGO807C, BGO807CE

CATV types for Chinese (C-types) and 1 GHz GaAs HFET

line-ups

1 GHz GaAs HFET high-end hybrids

` CATV push-pulls, section 3.6.2 : CGY1032, CGY1041,

CGY1043, CGY1047, CGY1049

The C-types are specially designed for the Chinese market,

customized for two major governmental projects. The GaAs

HFET family includes a complete 1 GHz line-up for high-end

applications around the world.

` CATV power doublers, section 3.6.3: CGD1040Hi,

CGD1042Hi, CGD1044Hi, CGD1046Hi, CGD1042H,

CGD1044H

3.6.1 CATV push-pulls

I_tot

(mA)

RL_IN/RL_OUT

(dB)

Frequency range

(MHz) ⁽¹⁾

Gain

(dB)

Slope

(dB)

FL

(dB) ⁽²⁾

CTB

(dB) ⁽³⁾

X_mod

(dB) ⁽³⁾

CSO

(dB) ⁽³⁾

@ Vo

(dBmV)

NF @ f_max

(dB)

Type

@ Ch

BGY588C

BGY785A

BGE788C

BGY787

BGE787B

BGE885

BGX885N

BGY885A

BGY887

CGY888C

BGY835C

BGY887B

BGY888

40-550

33.5 - 35.5 0.2 - 1.7

18 - 19 0 - 2

33.2 - 35.2 0.3 - 2.3

21 - 22 0 - 1.5

28.5 - 29.5 0.2 - 2.2

16.5 - 17.5 0.2 - 1.2

16.5 - 17.5 0.2 - 1.4

0.5

0.1

16 / 16

20 / 20

16 / 16

20 / 20

14 / 14

20 / 20

-57

-54.5

-49

-54.5

-48

-62

-52

-57.5

-56

77

44

8

6

8

5

6.5

8

6

5

4

345

225

325

220

340

240

225

220

280

340

325

-57.5

110

0.6

0.2

0.45

0.5

0.3

0.2

0.25

0.5

0.2

40-750

-54

-52

18 - 19

21 - 22

34.5 - 36.5

0 - 2

0.2 - 2

1.5

-65

-64.5

-65

-60

-65

-64.5

-72

-67

-67.5

-63

-55

-60

49

112

49

44

40-870

33.5 - 34.5 0.5 - 2.5

28.5 - 29.5 0.5 - 2.5

33.5 - 34.5 0.5 - 2.5

7

6.5

5.5

-60

-63

-63.5

-64

3.6.2 CATV push-pulls 1 GHz

I_tot

(mA)

RL_IN/RL_OUT

(dB)

Frequency

Gain

(dB)

Slope

(dB)

FL

CTB

X_mod

CSO

@ Vo NF @ f_max

Type

@ Ch

range (MHz)⁽¹⁾

(dB) ⁽¹⁾

(dB) ⁽³⁾(dB) ⁽³⁾(dB) ⁽³⁾

(dBmV)

(dB)

4.3

4.2

4.5

4.4

7.5

CGY1041

CGY1043

CGY1047

CGY1049

CGY1032

BGY1085A

21 - 22.5 1.2 - 2.7

23 - 24.5 1.2 - 2.7

27 - 28.5 1.5 - 2.5

0.9

0.8

20 / 18

20 / 20

-62

-64

-62

-53

-58

-60

-58

-54

-64

-66

-64

-56

79 NTSC channels + 75 digital channels

150

44

265

250

265

240

44

40 - 1003

29 - 31 0.85 - 2.35 0.85

32 - 34 1.05 - 2.55 0.85

44

18 - 19

0 - 2

0.3

40

Bold = highly recommended product

NXP Semiconductors RF Manual 16^thedition

93

3.6.3 CATV power doublers

I_tot

(mA)

RL_IN/RL_OUT

(dB)

Frequency

range (MHz) ⁽¹⁾

Gain

(dB)

Slope

(dB)

FL

(dB) ⁽¹⁾

X_mod

(dB) ⁽³⁾

@ Vo

(dBmV)

NF @ f_max

(dB)

Type

CTB (dB)⁽³⁾

CSO (dB)⁽³⁾

@ Ch

BGD712

BGD712C

BGD714

BGD812

BGD814

BGD816L

CGD942C

CGD944C

CGD1040HI

CGD1042HI

CGD1044HI

CGD1046HI

CGD1042H

CGD1044H

CGD982HCI

CGD985HCI

CGD987HCI

18.2 - 18.8

20 - 20.6

18.2 - 18.8

19.7 - 20.3

21.2 - 21.8

22 - 24

0.5 - 1.5

0.4 - 1.4

0.5 - 1.5

1 - 2

0.35

0.5

1

0.5

1

17 / 17

23 / 23

25 / 23

25 / 24

22 / 25

20 / 20

20 / 21

20 / 20

-62

-61

-57

-56

-55

-66

-70

-75

-66

-63

-62

-58

-57

-56

-66

-76

-75

-70

-76

-69

-66

112

132

98

79

98

44

48

58.4

56.4

59

48

7

395

410

395

360

450

440

450

440

40 - 750

40 - 870

-62

-61

-58

-66

-65

-64

-68

-67

-68

7.5

3.5

5.5

5

5.5

5

24 - 26

1 - 2

19.5 - 22

22 - 23.5

23.5 - 25.5

26.5 - 28

22 - 24

24 - 26

22 - 24

23.5 - 25.5

26 - 28

0.5 - 2

0.7 - 2.2

1.5

40 - 1003

1

0.5 - 2

0.7 - 2

5

3.6.4 CATV optical receivers

RL_OUT

(dB)

@ f_measured

(MHz)

@ P_i(opt)

(mW)

Frequency

S

Slope

(dB)

FL

(dB) ⁽¹⁾

IMD3

(dB) ⁽³⁾

IMD2

(dB) ⁽³⁾

NF @ f_max

(dB)

I_tot

(mA)

Connectors

Type

range (MHz)⁽¹⁾(V/W) ⁽⁴⁾

BGO807C

BGO807CE

750

40 - 870

0 - 2

1

11

-71

-69

-55

-53

854.5

1

8.5

205

FC and SC

750

3.6.5 CATV reverse hybrids

I_tot

(mA)

RL_IN/RL_OUT

(dB)

Frequency

range (MHz)

Gain

(dB)

Slope

(dB)

FL

(dB) ⁽¹⁾

CTB

(dB)⁽³⁾

X_mod

(dB)⁽³⁾

CSO

(dB)⁽³⁾

@ Vo

(dBmV)

NF @ f_max

(dB)

Type

@ Ch

(1)

BGY68

BGY66B

BGY67

BGY67A

BGR269

5 - 75

5 - 120

29.2 - 30.8

24.5 - 25.5

21.5 - 22.5

23.5 - 24.5

34.5 - 35.5

-0.2 - 0.5

-0.2 - 0.6

0.2

0.5

20 / 20

-68

-66

-67

-57

-60

-54

-60

-59

-50

4

50

48

50

3.5

5

5.5

135

215

160

14

22

28

5 - 200

-66

Bold = highly recommended product

⁽¹⁾Frequency range: minimum and maximum frequency in MHz at which data are characterized (@ Ch / @ Vo)

⁽²⁾FL is flatness of frequency response

⁽³⁾The number of channels and the output voltage at which CTB, X_mod, CSO, IMD2, and IMD3 are characterized, are @ f_max

⁽⁴⁾S is minimum responsivity of optical receivers

94

NXP Semiconductors RF Manual 16^thedition

3.7

RF power transistors

NEW: RF power transistor selection guide on www.nxp.com/rfpower

Easy-to-use parametric filters help you choose the right RF

power transistor for your design.

3.7.1 RF power transistors for base stations

Device naming conventions RF power transistors for base stations

B

L

F

6

G

22

L

S

-45

P

R

B

N

G

V

video bandwidth enhanced

gullwing-shaped leads

specialty

option: current sense lead

enhanced ruggedness

push-pull device

P1dB power

option: earless package

option: low thermal resistivity

operating frequency (in 100MHz; maximum)

G: standard LDMOS

LDMOS technology generation

F: LDMOS transistor in ceramic package

C: LDMOS transistor in air cavity plastic (ACP) package

D: fully integrated Doherty amplifier

M: MMIC module

L: high frequency power transistor

B: semiconductor die made of Si

Why choose NXP‘s RF power transistors for base stations:

` Leading technology (generations 6, 7, and 8 of LDMOS)

` Highest efficiency

` Best ruggedness

` Advanced Doherty amplifier designs

` Very broad band (video bandwidth enhanced) devices

` Industry’s first 3.8 GHz Doherty

` Industry's first three-way, 900 MHz Doherty

` Industry's first 50 V, 600 W, single-package Doherty

NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for base stations,

covering all cellular technologies [MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS, LTE] and WiMAX infrastructures.

3.7.1.1

0.7 - 1.0 GHz line-up

Test signal performance

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

BO

(dB)

G_p

(dB)

η_D

(%)

Type

Product

Matching

Test signal

Package

(MHz) (MHz)

BLP7G22-10*

BLM6G10-30(G)

Driver

MMIC

700

920

700

850

920

688

700

900

2200

960

1000

900

960

1000

10

30

40

45

-

I/O

I

28

30

28

50

32

30

28

2

2.5

1

7.0

11.8

12.0

16.5

6.0

7.0

6.6

6.2

7.0

7.1

5.5

7.0

6.6

6.5

8.1

6.8

7.0

26

11.5

15

8

28

30

29

30.5

28.5

28

30

27

28

26.5

28

27

17

29

23

19

2-c WCDMA

SOT1179

SOT822

SOT1112A

SOT608

SOT1224

SOT539

SOT502

SOT467

SOT502

SOT1244

SOT1244C

SOT539

SOT1244C

SOT1242C

SOT1224

BLF6G10L-40BRN

BLF6G10(S)-45

BLP7G07S-140P(G)*

BLF8G10L(S)-300P*

BLF8G10L(S)-160

Driver/final

I

140

300

160

250

200

135

160

200

260

270

400

140

O

I/O

I

-

I

I/O

I

I/O

O

35

60

35

60

40

26.5

45

32

35

45

40

56

79

35

19

19.7

19.5

20

21

20

22.5

30

19.3

22

19.6

19.4

19

BLF7G10L(S)-250

BLF6G10(LS)-200RN

BLF6G10(LS)-135RN

BLF6H10L(S)-160

BLF6G10(LS)-160RN

BLF8G10L(S)-160V*

BLF8G10LS-200GV*

BLF6G10L(S)-260PRN

BLF8G10LS-270GV*

BLF8G10LS-400PGV*

BLP7G09S-140P(G)*

Final

6.0

28

Bold red = new, highly recommended product

* Check status in section 3.1, as this type is not yet released for mass production

NXP Semiconductors RF Manual 16^thedition

95

3.7.1.2

1.4 - 1.7 GHz line-up

Test signal performance

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

BO

(dB)

G_p

(dB)

η_D

(%)

Type

Product

Matching

Test signal

Package

(MHz) (MHz)

BLF6G21-10G

BLP7G22-10

BLF6G15L-40BRN

BLF6G15L(S)-40RN*

BLF7G15LS-200

BLF6G15L-250PBRN

BLF7G15LS-300P

1

700

1450

2200

1550

10

40

-

28

0.7

2

2.5

50

60

85

11.5

7.0

12.0

6.0

6.2

5.5

15

26

13

29

33

31

18.5

17

22

21.5

19.5

18.5

18

2-c WCDMA

SOT538A

SOT1179

SOT1112A

SOT1135

SOT502B

SOT1110A

SOT539B

Driver

I/O

Driver/final

40

200

250

300

Final

3.7.1.3

1.8 - 2.0 GHz line-up

Test signal performance

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

BO

(dB)

G_p

(dB)

η_D

(%)

Type

Product

Matching

Test signal

Package

(MHz) (MHz)

BLF6G21-10G

BLP7G22-10

BLF6G20(S)-45

1

700

2200

2000

2170

2000

1900

2000

1990

1880

10

45

90

75

110

140

180

200

230

260

270

200

250

-

28

30

28

0.7

2

2.5

40

29.5

25

35.5

60

40

55

65

50

56

55

70

11.5

7.0

15

26

14

18.5

17

19.2

19.5

19

2-c WCDMA

GSM EDGE

2-c WCDMA

GSM EDGE

2-c WCDMA

SOT538A

SOT1179

SOT608

SOT1121

SOT502

Driver

Driver/final

1800

1427

1800

1805

I/O

12.6

3.5

4.1

6.4

6.0

3.7

6.5

5.6

5.5

7.2

BLF7G20L(S)-90P

BLF6G20(LS)-75

BLF6G20(LS)-110

BLF6G20LS-140

BLF7G20LS-140P

BLF6G20(LS)-180RN

BLF8G20L(S)-200V*

BLF6G20S-230PRN

BLF7G20LS-260A*

BLF8G20LS-270GV*

41

37.5

32

30

41

27

33

32

44

25

28

33

35

19

SOT502

16.5

17.5

17.2

17.5

15.5

17.8

19.4

18

SOT502B

SOT1121B

SOT502

SOT1120

SOT539B

SOT1244C

SOT1242C

SOT502

Final

7.3

BLF8G20LS-270PGV*

BLF7G20L(S)-200

BLF7G20L(S)-250P

6.8

5.6

5.5

18

SOT539

Integrated

Doherty

BLD6G21L(S)-50

2010

2025

50

O

28

8

8.0

43

14.5

TD-SCDMA

SOT1130

3.7.1.4

2.0 - 2.2 GHz line-up

Test signal performance

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

BO

(dB)

G_p

(dB)

η_D

(%)

Type

Product

Matching

Test signal

Package

(MHz) (MHz)

BLF6G21-10G

BLP7G22-10*

BLF3G21-6

BLF3G21-30

BLF6G22L(S)-40P

BLF6G22L-40BN

BLF6G22(S)-45

BLM6G22-30(G)

BLM7G22S-60PB(G)*

BLF7G21LS-160

1

700

2200

2170

2200

2050

2200

2170

10

6

30

40

45

30

60

-

28

26

28

32

30

28

0.7

2

6

30

13.5

2.5

2

3.2

45

17

25

20

30

43

55

50

40

48

50

55

70

11.5

7.0

15

26

39

35

30

16

13

9

10

34

30.5

29

28.5

32

30

27.5

25

18.5

17

15.5

13.5

19

2-c WCDMA

CW

SOT538A

SOT1179

SOT538A

SOT467C

SOT1121

SOT1112A

SOT608

Driver

1800

2110

2000

2100

2000

1800

2000

2110

0.0

4.7

12.0

12.6

11.8

12.7

5.5

6.4

6.0

7.0

6.4

5.7

4.6

5.6

6.5

6.2

7.3

CW

I/O

2-c WCDMA

Driver/final

MMIC

19

18.5

29.5

30

18

18.7

18.5

19.1

17

18.5

18

18.5

17.5

16

20.2

17.8

18

SOT822

SOT1212

SOT1121B

SOT1121

SOT502B

SOT1121B

SOT502B

SOT502

160

75

BLF7G21L(S)-160P

BLF6G22LS-75

BLF6G22LS-100

BLF7G22L(S)-100P

BLF6G22LS-130

BLF7G22L(S)-130

BLF7G22L(S)-160

BLF8G22LS-160BV*

BLF6G22(LS)-180PN

BLF6G22(LS)-180RN

BLF8G22LS-200GV*

BLF8G22LS-270GV*

BLF8G22LS-400PGV*

BLF7G22L(S)-200

BLF7G22L(S)-250P

100

130

160

180

200

270

400

200

250

SOT502B

SOT1120B

SOT539

Final

SOT502

28

26

31

SOT1244C

SOT1242C

SOT502

9.0

5.6

5.5

18.5

31

SOT539

Integrated

Doherty

BLD6G22L(S)-50

2110

2170

50

I/O

28

8

8.0

40

14

TD-SCDMA

SOT1130

3.7.1.5

2.3 - 2.4 GHz line-up

Test signal performance

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

BO

(dB)

G_p

(dB)

η_D

(%)

Type

Product

Matching

Test signal

Package

(MHz) (MHz)

BLF6G27-10(G)

Driver

2300

2700

2400

10

I

28

2

7.0

6.7

7.3

5.2

20

27

26.5

27.5

30

19

18

N-CDMA/IS95

SOT975

SOT502

SOT539

BLF7G24L(S)-100

BLF7G24L(S)-140

BLF7G24L(S)-160P*

BLF8G24L(S)-200P*

100

140

160

200

I/O

20

30

60

18.5 N-CDMA/IS95

16.5

Final

1-c WCDMA

Bold red = new, highly recommended product

* Check status in section 3.1, as this type is not yet released for mass production

96

NXP Semiconductors RF Manual 16^thedition

3.7.1.6

2.5 - 2.7 GHz line-up

Test signal performance

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

BO

(dB)

G_p

(dB)

η_D

(%)

Type

Product

Matching

Test signal

Package

(MHz) (MHz)

BLF6G27-10(G)

BLF6G27L(S)-40P

BLF6G27(S)-45

Driver

2300

2500

2300

2500

2600

2700

10

40

I

28

32

28

32

2

20

7

3

12

9

16

14

25

20

30

50

30

32

50

45

65

7.0

3.0

8.1

12.2

8.0

9.2

7.5

8.5

6.0

8.3

6.7

4.5

7.0

8.0

7.5

4.9

20

37

19

17.5

18

16.5

17

N-CDMA/IS95

1-c WCDMA

SOT975

SOT1121

SOT608

SOT1112

SOT1121

SOT502

SOT1121

I/O

45

24

N-CDMA/IS95

2-c WCDMA

Driver/final

BLF6G27L(S)-50BN

BLF7G27L(S)-75P

BLF6G27(LS)-75

BLF7G27L(S)-90P

BLF7G27LS-90PG*

BLF6G27(LS)-100

BLF7G27L(S)-100

BLF6G27(LS)-135

BLF7G27L(S)-140

BLF8G27LS-140

BLF8G27LS-140G*

BLF7G27L(S)-150P

BLF8G27LS-200PGV*

BLF8G27LS-280PGV*

BLF8G27LS-140V*

BLF7G27L-200PB

50

75

90

100

135

140

150

200

280

140

200

14.5

26

23

29

27.5

23

28

22.5

22

31

26

N-CDMA/IS95

18.5 N-CDMA/IS95

17.5 N-CDMA/IS95 SOT1121C

17

18

16

1-c WCDMA

N-CDMA/IS95

SOT502

SOT502B

SOT502E

SOT539

SOT1242C

SOT1244B

SOT1110A

16.5 N-CDMA/IS95

Final

18

2-c WCDMA

16.5 N-CDMA/IS95

23

21

30

17

2-c WCDMA

16.4

16.5

29

3.7.1.7

3.5 - 3.8 GHz line-up

Test signal performance

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

BO

(dB)

G_p

(dB)

η_D

(%)

Type

Product

Matching

Test signal

Package

(MHz) (MHz)

BLF6G38-10(G)

BLF6G38(S)-25

BLF6G38(LS)-50

BLF6G38(LS)-100

3400

Driver/final 3400

Final 3400

3600

3800

3600

10

25

I/O

28

2

4.5

9

7.0

7.4

7.3

20

24

14

15

14

13

N-CDMA/IS95

SOT975

SOT608

SOT502

Driver

50

23

100

18.5

21.5

3.7.1.8

Power LDMOS Doherty designs

PPEAK POUT-AVG VDS

Gain Drain efficiency

Freq band (MHz)

Type

Main transistor

Peak transistor

(dBm)

(V)

(dB)

(%)

728-821 MHz

790-821

55.5

57.2

58

47

49.5

50

28

32

19

20

20.5

42

47

SYM

1/2 BLF6G10L(S)-260PRN

BLF6G10LS-200RN

1/2 BLF6G10L(S)-260PRN

BLF6G10LS-200RN

728-768

869-960 MHz

920-960

869-894

920-960

869-894

920-960

46

52

38

44

44.5

47.5

47.1

48

50

49.2

49

28

30

28

30

28

30

28

32

28

32

28

24

20

15

17.3

20.5

18.5

18.8

15.8

16.1

15

51

48

50

48

44

40

44.5

48

46.7

48

49.5

50

48.8

40

50.1

46

49.1

47

52

SYM

3-WAY

SYM

BLF6G21-10G

BLF6G10S-45

BLF6G21-10G

BLF6G10S-45

2x BLF6G10S-45

52.7

54.7

55.1

56.2

56.6

57

57.1

57.2

57.3

57.5

57.7

57.9

58

BLF6G10LS-135RN

1/2 BLF6G10L(S)-260PRN

BLF6G10LS-135RN

BLF6G10LS-200RN

BLF7G10LS-250

BLF8G10LS-160

BLF7G10LS-250

BLF8G10LS-160

BLF6G10LS-200RN

BLF6G10L(S)-260PRN

BLF6G10LS-260PRN

BLF6G10-200RN

BLF6G10LS-200RN

BLF6G10L(S)-260PRN

BLF7G10LS-250

BLF6G10LS-135RN

1/2 BLF6G10L(S)-260PRN

BLF6G10LS-135RN

BLF6G10LS-200RN

BLF7G10LS-250

SYM

ASYM

3-WAY

SYM

ASYM

BLF7G10LS-250

2x BLF8G10LS-160

BLF7G10LS-250

49

49.3

50.8

49.7

52

50

52

50.9

50.4

16.5

16

18

869-894

925-960

869-894

925-960

869-894

20.5

18.2

20.5

16.1

22

SYM / MPPM

SYM / MMPP

SYM

ASYM

SYM / MMPP

3-WAY

BLF6G10L(S)-260PRN

BLF6G10LS-260PRN

BLF6G10-200RN

2x BLF7G10LS-250

BLF6G10L(S)-260PRN

2x BLF7G10LS-250

58.9

59.2

16

1476-1555 MHz

1526-1555

1476-1511

56.6

58.1

58.6

48.6

49.6

50.6

28

32

18.4

16

16.5

42

SYM

ASYM

SYM

BLF7G15LS-200

BLF6G15LS-250PBRN

BLF7G15LS-200

BLF7G15LS-300P

BLF6G15LS-250PBRN

1805-1880 MHz (DCS)

1805-1880

1845-1880

1805-1880

48

50

52.5

52.6

54

40

42.8

44.5

45

47

49

47.5

47

48.1

49

28

31

28

30

28

15.4

15.8

16

14.5

16

15.5

16.3

16

15.2

32

42.4

48

44

46.5

49

47

49

41

48

45.5

SYM

ASYM

SYM

ASYM

1/2 BLF6G22LS-40P

1/2 BLF7G20LS-90P

1/2 BLF7G21LS-160P

BLF6G20LS-110

BLF7G21LS-160P

BLF7G20LS-90P

1/2 BLF7G20L(S)-250P

BLF7G20LS-90P

1/2 BLF6G22LS-40P

1/2 BLF7G20LS-90P

1/2 BLF7G21LS-160P

BLF6G20LS-110

BLF7G21LS-160P

1/2 BLF7G20L(S)-250P

BLF7G20LS-200

55

55.4

55.5

56.1

56.5

BLF6G21-10G

BLF7G20LS-200

Bold red = new, highly recommended product

* Check status in section 3.1, as this type is not yet released for mass production

NXP Semiconductors RF Manual 16^thedition

97

PPEAK POUT-AVG VDS

Gain Drain efficiency

Freq band (MHz)

Type

Main transistor

Peak transistor

(dBm)

(V)

28

30

28

30

32

28

30

(dB)

14.3

16

(%)

45.1

42

1805-1880

57.1

49

3-WAY

SYM

ASYM

BLF7G21LS-160P

BLF7G20LS-200

BLF7G20LS-250P

BLF6G20-230PRN

BLF7G20LS-250P

BLF7G20LS-200

2x BLF7G21LS-160P

BLF7G20LS-200

57.5

57.8

57.9

49.5

50.5

50.4

50

14

48

BLF7G20LS-250P

BLF6G20-230PRN

BLF7G20LS-250P

2x BLF7G20LS-200

16

15.5

16

41.5

37

42

SYM

SYM / MMPP

SYM MPPM

3-WAY

58.2

58.6

58.7

50

51

16

15.8

47.6

47

3-WAY

1930-1990 MHz (PCS)

1930-1990

53

45

47.4

47.2

47.5

49

48

49

49.5

50

28

31

28

30

28

30

16.5

16.7

16

14.5

15.3

14.8

17.2

15.1

16

40

48.2

40

46

48

38

45

41

46

SYM

ASYM

SYM

ASYM

SYM

ASYM

SYM

ASYM

3-WAY

BLF6G20-75

BLF6G20LS-110

1/2 BLF7G20LS-250P

BLF7G20LS-90P

BLF7G21LS-160P

BLF6G20LS-140

BLF7G20LS-140P

BLF7G20LS-200

BLF7G21LS-160P

BLF7G20LS-250P

BLF6G21-10G

BLF6G20-75

BLF6G20LS-110

1/2 BLF7G20LS-250P

BLF7G20LS-200

BLF6G20LS-140

BLF7G20LS-200

2x BLF7G21LS-160P

BLF7G20LS-250P

BLF7G20LS-200

2x BLF7G20LS-200

54.3

55.2

55.5

55.7

56

57

58.2

56.8

58.5

40

42.3

43

49.1

50.5

32

15.7

BLF7G20LS-200

1805-2025 MHz (TD-SCDMA)

2010-2025

1880-2025

2010-2025

1805-2050

2010-2025

1880-1920

47

50

52

52.2

52.5

39

42

44.5

44

44.5

28

14.4

17

17.2

15.2

15.6

16

41

46

47.2

41.5

43

SYM

BLD6G21L(S)-50

1/2 BLF7G20L(S)-90P

1/2 BLF7G21LS-160P

BLD6G21L(S)-50

1/2 BLF7G20L(S)-90P

1/2 BLF7G21LS-160P

44

2110-2170 MHz (UMTS / LTE)

2110-2170

47

39

40

40.5

46.5

47

46.4

49

47.9

48

28

32

13

17

17.2

16.5

17

15.5

15

14.5

17.3

15

16.2

14.2

16

38

44

46

43

38

43

47

42

48

41

46

47

40

SYM

BLD6G22L(S)-50

1/2 BLF6G22LS-40P

1/2 BLF6G22L-40P

BLF6G22LS-100

BLF7G22L(S)-130

1/2 BLF7G22LS-250P

BLF6G22L(S)-130

BLF7G22L(S)-130

BLF7G22LS-130

BLF7G22LS-160

BLF7G22L(S)-130

BLF7G22L(S)-200

BLF7G22LS-160

BLF7G22LS-250P

BLD6G22L(S)-50

1/2 BLF6G22LS-40P

1/2 BLF6G22L-40P

BLF6G22LS-100

BLF7G22L(S)-130

1/2 BLF7G22LS-250P

BLF6G22L(S)-130

BLF7G22L(S)-200

BLF7G22LS-200

48.3

48.5

54.7

54.9

55

SYM

55

55.5

55.7

55.9

56

56.5

57.2

58

ASYM

SYM

3-WAY

SYM

ASYM

3-WAY

SYM

BLF7G22LS-160

2x BLF7G22L(S)-130

BLF7G22L(S)-200

BLF7G22LS-200

2x BLF7G22L(S)-160

BLF7G22LS-250P

48.5

49

49.2

50

17.5

2300-2400 MHz (WiBRO / LTE)

2300-2400

49.5

53

54.1

55

56.2

56.8

42

45

47

47.5

48.5

28

30

14.6

15

15.5

15.2

15

44

42.3

45

44

40

SYM

ASYM

SYM

3-WAY

1/2 BLF7G27L(S)-75P

1/2 BLF7G24LS-160P

BLF7G24LS-100

BLF7G24LS-140

1/2 BLF7G27L(S)-75P

1/2 BLF7G24LS-160P

BLF7G24LS-100

BLF7G24LS-140

15

42

BLF7G24LS-100

2x BLF7G24LS-100

2500-2700 MHz (WiMAX / LTE)

2620-2690

2580-2620

2620-2690

2570-2620

2500-2700

2500-2600

2600-2700

2500-2700

2570-2620

2620-2690

2545-2575

2570-2620

46.9

48.2

49.5

50

50.3

52

39

40

42

42.3

44

44.5

47

28

30

28

14.6

14.4

14.6

15

14.5

14

15.2

15

46.2

41

44

43

37.5

39

40

38

ASYM

SYM

BLF6G27-10G

1/2 BLF6G27LS-40P

1/2 BLF7G27L(S)-75P

BLF6G27S-45

1/2 BLF6G27LS-40P

1/2 BLF7G27L(S)-75P

BLF6G27S-45

1/2 BLF7G27LS-90P

2x BLF6G27-45

BLF6G27(LS)-100

1/2 BLF7G27LS-150P

BLF7G27LS-100

BLF7G27LS-140

SYM

1/2 BLF7G27LS-90P

BLF6G27-45

3-WAY

ASYM

SYM

BLF6G27-45

52

52.5

54.1

55.2

55.3

55.4

1/2 BLF7G27LS-150P

BLF7G27LS-100

43

41

40.4

SYM

47.2

47.3

47

ASYM

15

BLF7G27LS-140

3300-3800 MHz (WiMAX)

3400-3600

3500-3700

51

52

43

45

28

11.5

10

32

30

SYM

ASYM

BLF6G38-50

BLF6G38LS-50

BLF6G38-50

BLF6G38LS-100

98

NXP Semiconductors RF Manual 16^thedition

3.7.2 RF power transistors for broadcast / ISM applications

Why choose NXP’s RF power transistors for broadcast / ISM applications:

` Highest power

` Best-in-class design support

` Best ruggedness

` Very low thermal resistance design for unrivalled

` Best broadband performance

reliability

NXP's leading LDMOS technologies, together with advanced package concepts, enable power amplifiers that deliver

best-in-class performance. We offer the industry’s highest power and best ruggedness for all broadcast technologies.

Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF), and High Frequency (HF)

applications and covers ISM frequency bands.

3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS line-up

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

G_p

(dB)

η_D

(%)

Type

Product

Test signal Package

(MHz) (MHz)

BLF571

BLF645

Driver

10

1

500

1400

1000

800

500

1400

500

860

128

20

100

300

200

300

500

600

1200

1400

150

50

32

40

32

50

32

50

32

50

32

50

20

100

150

200

300

500

600

1000

1400

150

70

56

60

70

60

70

75

69

60

75

72

27,5

18

21

12,5

24

18

27.2

18

26.5

26

23

CW

pulsed

CW

pulsed

CW

pulsed

CW

pulsed

SOT467C

SOT540A

SOT467

SOT540A

SOT1121

SOT502

SOT800-2

SOT539A

SOT539

SOT539A

SOT539

BLF871(S)

BLF647

BLF572XR(S)*

BLF647P(S)*

BLF573(S)

BLF369

BLF574

BLF574XR(S)*

BLF578

BLF578XR(S)*

BLF861A

BLF174XR(S)

BLF178XR(S)

1

10

470

10

Final

14

28

29

SOT540A

SOT539

600

1400

600

1400

128

3.7.2.2 UHF 470-860 MHz LDMOS line-up

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

G_p

(dB)

η_D

(%)

Type

Product

Test signal

Package

(MHz) (MHz)

BLF642

Driver

1

470

1400

1000

860

35

32

40

50

42

50

42

50

35

63

60

49

46

47

46

19

21

19

21

CW

SOT467C

SOT467

SOT979A

SOT1121

SOT539A

SOT979A

SOT539

BLF871(S)

BLF881(S)

BLF878

BLF884P(S)

BLF879P

BLF888

100

140

300

500

600

100

140

300

150

200

250

Final

BLF888A(S)

BLF888B(S)

3.7.2.3 2.45 GHz ISM LDMOS transistor line-up

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

G_p

(dB)

η_D

(%)

Type

Product

Test signal Package

(MHz) (MHz)

BLF25M612(G)

Driver

1

2500

12

28

12

60

52

55

52

55

19

17.5

12

15

CW

SOT975

SOT502

SOT539

SOT502

SOT539

BLF2425M7L(S)140

BLF2425M6L(S)180P

BLF2425M7L(S)200

BLF2425M7L(S)250P

2400

140

180

200

250

140

180

200

250

Final

Bold red = new, highly recommended product

* Check status in section 3.1, as this type is not yet released for mass production

NXP Semiconductors RF Manual 16^thedition

99

3.7.3 RF power transistors for aerospace and defense

Device naming conventions RF power transistors for aerospace and defense

B

L

S

6

G

2731

S

-120

G

option: gullwing shaped leads

P1dB power

S: earless package

P: pallet

frequency band (in 100MHz; here: 2700-3100)

G: standard LDMOS (≤ 28V)

H: high voltage LDMOS (50V)

LDMOS technology generation

A: avionics frequency band operation

L: L-band frequency operation

S: S-band frequency operation

L: high frequency power transistor

B: semiconductor die made of Si

Why choose NXP’s microwave RF power transistors

` High gain

` High efficiency

` Highest reliability

` Improved pulse droop and insertion phase

` Improved ruggedness - overdrive without risk to +5 dB

` Reduces component count and helps simplify L- and S-band radar design

` Uses non-toxic, RoHS-compliant packages

3.7.3.1 Avionics LDMOS transistors

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

G_p

(dB)

η_D

(%)

Type

Product

Test signal Package

(MHz) (MHz)

BLA1011-2

BLA1011-10

1030

960

1030

960

1030

400

1090

1215

1090

1215

1090

1000

2

10

36

28

36

32

50

48

50

2

10

-

16

15

20

13.5

16.5

17

20

pulsed

SOT538A

SOT467C

SOT502

SOT502A

SOT502

SOT502A

SOT957A

SOT634A

SOT539A

SOT539

Driver

40

50

65

50

57

50

52

57

BLA1011(S)-200R

BLA6G1011-200R

BLA6G1011LS-200RG

BLA0912-250R

BLA1011-300

BLA6H0912-500

BLA6H1011-600

BLU6H0410L(S)-600P

200

250

300

500

600

200

250

300

450

600

Final

3.7.3.2 L-band LDMOS transistors

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

G_p

(dB)

η_D

(%)

Type

Product

Test signal Package

(MHz) (MHz)

BLL6H0514-25

BLL1214-35

500

1200

500

1200

1400

25

35

50

36

50

36

50

25

35

50

43

50

47

45

55

50

19

13

17

13

15

17

pulsed

SOT467C

SOT1135

SOT502A

SOT502

Driver

BLL6H0514L(S)-130

BLL1214-250R

BLL6G1214L-250

BLL6H1214L(S)-250

BLL6H1214(LS)-500

130

250

500

130

250

500

Final

SOT539A

Bold red = new, highly recommended product

100

NXP Semiconductors RF Manual 16^thedition

3.7.3.3 S-band LDMOS transistors

f_min

f_max

P1dB

(W)

VDS

(V)

P_L

(W)

G_p

(dB)

η_D

(%)

Type

Product

Test signal Package

(MHz) (MHz)

BLS6G2731-6G

2700

3100

2700

2900

2300

2700

3100

2700

2900

2700

3100

3500

3300

2500

3100

3500

3100

3300

2900

3500

6

20

30

32

30

32

6

20

30

33

45

50

40

55

48

43

50

47

50

43

15

15.5

13

pulsed

SOT975C

SOT608

SOT1135

SOT502A

SOT502

BLS6G3135(S)-20

BLS6G2735L(S)-30

BLS2933-100

Driver

100

105

120

130

150

350

100

105

120

130

150

350

8

BLS7G2325L-105

BLS6G2731(S)-120

BLS6G3135(S)-120

BLS6G2731S-130

BLS6G2933S-130

BLS7G2933S-150

BLS7G2729L(S)-350P

BLS7G3135L(S)-350P

16.5

13.5

11

SOT502

Final

12

SOT922-1

SOT539

12.5

13.5

10

SOT539

3.7.4 Gallium Nitride (GaN) RF power amplifiers

Device naming conventions GaN RF power amplifiers

C

L

F

1G 0040

S

#

P

P:

push-pull indicator, P = push-pull type; no P means single-ended transistor

2 to 1500: nominal P3dB in Watts: eg 50 = 50W

S

earless type, S = earless; no S means eared package

35 to 60: upper frequency, 10x GHz value: 35 = 3.5GHz; 60 = 6.0GHz

00 to 40:lower frequency, 10x GHz value: 00 = 0GHz or DC; 40 = 4.0GHz

1G: technology generation: 1G = 1st generation

F: package style: F = ceramic, P = overmolded plastic

L: high frequency power transistor

C: primary material identifier: C = wide band-gap compound materials, eg GaN

f_min

f_max

P_out

(W)

VDS

(V)

G_p

(dB)

Test

signal

η_D

(%)

Type

Matching

Package

SOT1227

SOT467

Applications

(MHz) (MHz)

Cellular, WiMAX, ISM, avionics,

S-band, general purpose

CLF1G0060-10*

CLF1G0060-30*

CLF1G0035-50*

CLF1G0035-100*

0

6000

3500

10

30

-

50

54

52

14

Pulsed

Cellular, WiMAX, ISM, avionics,

S-band, general purpose

Cellular, WiMAX, ISM, avionics,

S-band, general purpose

Cellular, WiMAX, ISM, avionics,

S-band, general purpose

50

14.2

14.8

100

3.8 Wireless microcontroller chipsets and modules

Module/

single chip

TX

RX

Operating

voltage

Form

factor

Type

Application

TX power Receiver sensitivity

current current

2.4-2.4835 GHz

JenNet & IEEE802.15.4

2.4-2.4835 GHz

JenNet & IEEE802.15.4

2.4-2.4835 GHz

Integral antenna

18 x 32 mm

U.FL connector

18 x 30 mm

U.FL connector

18 x 41 mm

JN5148-001-M00

JN5148-001-M03

JN5148-001-M04

JN5142-J01

Module

+2.5 dBm

+20 dBm

+2.5 dBm

–95 dBm

–98 dBm

–95 dBm

15 mA 17.5 mA 2.3-3.6 V

Module

110mA 23 mA

2.7-3.6 V

JenNet & IEEE802.15.4

2.4-2.4835 GHz

Single chip

15 mA 17.5 mA 2.3-3.6 V

6 x 6 mm QFN40

8 x 8 mm QFN56

6 x 6 mm QFN40

8 x 8 mm QFN56

JenNet-IP

2.4-2.4835 GHz

JenNet-IP

2.4-2.4835 GHz

JN5148-J01

JN5142-001

RF4CE & IEEE802.15.4

2.4-2.4835 GHz

JenNet & IEEE802.15.4

2.4-2.4835 GHz

JN5148-001

JN5148-Z01

ZigBee PRO

Bold red = new, highly recommended product

* Check status in section 3.1, as this type is not yet released for mass production

NXP Semiconductors RF Manual 16^thedition

101

4.ꢀ Designꢀsupport

This chapter will guide you through the available tools, documents, materials, and links that ease

the design-in of our products.

4.1ꢀ KnowingꢀNXP’sꢀRFꢀportfolioꢀ

4.3ꢀ Productꢀevaluation

Beyond this RF Manual, you can learn about NXP’s broad RF

NXP offers a broad range of support material for evaluating RF

portfolio through the NXP Technical Academy, various webinars products and optimizing the performance of your application.

and the NXP channel on YouTube.

Data sheets and application notes

The NXP Technical Academy provides training modules where

you can learn about our products and applications, watch

hands-on trainings and even get certified! The training modules

can be viewed on mobile devices as well.

The first chapter of this RF Manual includes application

diagrams, recommended type numbers, and product highlights.

More in-depth application information is available in the

second chapter, in product data sheets or in the Application

Notes section of the NXP website (www.nxp.com/products/

all_appnotes).

NXP provides RF webinars on a regular basis.

(www.nxp.com/news/meet-nxp/webinars-and-podcasts.html#rf)

Simulation tools

On NXP’s YouTube channel (www.youtube.com/user/

nxpsemiconductors), there are short videos that explain NXP's

portfolio, application information, tips and tricks to optimize

your systems performance, and more.

To help you evaluate our products in your specific application,

NXP offers various simulation tools, including small-signal

touchstone S-parameters and parametric models that let you

customize the biasing conditions. The parametric models are

based on best-in-class Mextram models and RFLDMOS models

developed by Philips Research, a recognized leader in physics-

based models. The parametric models fully support AC, DC,

S-parameter, harmonic balance, and time-domain simulations.

These models allow designers to assess the performance of

complex systems at an early stage of the development process.

4.2ꢀ ProductꢀselectionꢀonꢀNXP.comꢀ

Every RF product has its own webpage on the NXP website.

Pages can be accessed in several ways: by product tree, by

application area, or via cross-reference search. Or, simply type

'nxp <product>' in the Google search bar.

The models are available for Advanced Design System (ADS),

Microwave Office (MWO) and Ansoft Designer. Spice versions

of the parametric models, which can be used with almost any

commercial design tool, are also available.

Product tree and parametric search

The product tree (www.nxp.com/products/rf) categorizes the

product by function. The parametric search tool allows you to

refine the selection based on performance requirements.

Application area

To find out what NXP offers in each application area, use the

Explore Application section of the NXP website.

Cross reference

NXP maintains a cross-reference of competitor products

and NXP alternatives. This list can be searched online via the

search tool bar on the NXP website or off-line by installing the

X-Reference-Tool.

102

NXP Semiconductors RF Manual 16^thedition

Customer evaluation kits and samples

4.5ꢀ Applicationꢀnotes

Several kits are available for evaluation of our products. Boards

are provided with industry-standard RF connectors to facilitate

measurements and integration in your application. The features

and content of each kit are described on the NXP website and

are listed on the corresponding product page. On the Customer

Evaluation Kits page you can also find support materials, such

as the latest user manuals and software updates. You can order

small quantities of all products to build and evaluate prototypes.

To obtain a kit or order samples, please contact your local NXP

representative or authorized distributor.

Productꢀ

Filename Description


型号：	1617-35
厂家：	NXP
描述：	RF Manual 16th edition RF手册第16版晶体晶体管开关 CD 局域网
文件：	总130页 (文件大小：9375K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1617-35 [NXP]

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