1N829AT/R [NXP]

DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Reference Diode;


型号：	1N829AT/R
厂家：	NXP
描述：	DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Reference Diode
文件：	总5页 (文件大小：29K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

halfpage

M3D050

1N821 to 1N829

1N821A to 1N829A

Voltage reference diodes

1996 Mar 20

Product speciﬁcation

Supersedes data of March 1991

Philips Semiconductors

Product speciﬁcation

1N821 to 1N829

1N821A to 1N829A

Voltage reference diodes

FEATURES

DESCRIPTION

• Temperature compensated

Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass

package.

• Reference voltage range:

5.89 to 6.51 V (typ. 6.20 V)

• Low temperature coefficient range:

max. 0.0005 to 0.01 %/K.

handbook, halfpage

APPLICATION

MAM216

• Voltage reference sources in

measuring instruments such as

digital voltmeters.

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

working current

CONDITIONS

MIN.

−

MAX.

UNIT

I_Z

P_tot

T_stg

T_j

total power dissipation

storage temperature

T_amb= 50 °C

−

400

°C

−65

−

+200

200

junction temperature

°C

T_amb

operating ambient temperature

−55

+100

°C

1996 Mar 20

Philips Semiconductors

Product speciﬁcation

1N821 to 1N829

1N821A to 1N829A

Voltage reference diodes

ELECTRICAL CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

reference voltage

CONDITIONS

I_Z=7.5 mA

I_Z=7.5 mA; test points for

_amb: −55; +25; +75; +100 °C;

MIN.

TYP.

MAX.

UNIT

V_ref

5.89

6.20

6.51

∆V_ref

reference voltage excursion

1N821; 1N821A

−

see Fig.2; notes 1 and 2

1N823; 1N823A

1N825; 1N825A

1N827; 1N827A

1N829; 1N829A

S_Z

temperature coefﬁcient

1N821; 1N821A

I_Z= 7.5 mA: see Fig.3;

notes 1 and 2

−

0.01

%/K

1N823; 1N823A

0.005 %/K

0.002 %/K

0.001 %/K

0.0005 %/K

1N825; 1N825A

1N827; 1N827A

1N829; 1N829A

r_dif

differential resistance

1N821 to 1N829

1N821A to 1N829A

I_Z= 7.5 mA; see Fig.4

−

Ω

Notes

1. The quoted values of ∆V_refare based on a constant current I_Z. Two factors can cause ∆V_refto change, namely the

differential resistance r_difand the temperature coefficient S_Z.

a) As the max. r_difof the device can be 15 Ω, a change of 0.01 mA in the current through the reference diode will

result in a ∆V_refof 0.01 mA × 15 Ω = 0.15 mV. This level of ∆V_refis not significant on a 1N821 (∆V_ref< 96 mV),

it is however very significant on a 1N829 (∆V_ref< 5 mV).

b) The temperature coefficient of the reference voltage S_Zis a function of I_Z. Reference diodes are classified at the

specified test current and the S_Zof the reference diode will be different at different levels of I_Z. The absolute value

of I_Zis important, however, the stability of I_Z, once the level has been set, is far more significant. This applies

particularly to the 1N829. The effect of the stability of I_Zon S_Zis shown in Fig.3.

2. All reference diodes are characterized by the ‘box method’. This guarantees a maximum voltage excursion (∆V_ref)

over the specified temperature range, at the specified test current (I_Z), verified by tests at indicated temperature

points within the range. V_Zis measured and recorded at each temperature specified. The ∆V_refbetween the highest

and lowest values must not exceed the maximum ∆V_refgiven. Therefore the temperature coefficient is only given as

_ref1– V_ref2

100

------------------------------------- -------------------

_amb2– T_amb1V_{ref nom}

a reference. It may be derived from: S_Z

%/K

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R_{th j-tp}

R_{th j-a}

thermal resistance from junction to tie-point 8 mm from the body

thermal resistance from junction to ambient lead length 10 mm

300

375

K/W

1996 Mar 20

Philips Semiconductors

Product speciﬁcation

1N821 to 1N829

1N821A to 1N829A

Voltage reference diodes

GRAPHICAL DATA

MBG534

MBG536

0.002

handbook, halfpage

(2)

∆S

(3)

(1)

(%/K)

0.001

(mA)

7.5

−0.001

(1)

(2)

(3)

−0.002

2.5

-75

−0.003

-50

-25

(mA)

∆V

(mV)

ref(max)

Referenced to I_Z= 7.5 mA.

(1) T_j= 100 °C.

(2) T_j= 25 °C.

(3) T_j= −55 °C.

Fig.2 Working current as a function of the

maximum reference voltage excursion.

Fig.3 Temperature coefficient change as a

function of working current; typical values.

MBG535

handbook, halfpage

dif

(Ω)

(1)

(2)

(3)

(mA)

(1) T_j= 100 °C.

(2) T_j= 25 °C.

(3) T_j= −55 °C.

Fig.4 Differential resistance as a function of

working current; typical values.

1996 Mar 20

Philips Semiconductors

Product speciﬁcation

1N821 to 1N829

1N821A to 1N829A

Voltage reference diodes

PACKAGE OUTLINE

handbook, full pagewidth

0.55

max

1.6

max

3.04

max

25.4 min

MSA212 - 1

Dimensions in mm.

The marking band indicates the cathode.

The diodes are type branded.

Fig.5 SOD68 (DO-34).

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1996 Mar 20

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