2N2222A [NXP]
NPN switching transistors; NPN开关晶体管型号: | 2N2222A |
厂家: | NXP |
描述: | NPN switching transistors |
文件: | 总8页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
2N2222; 2N2222A
NPN switching transistors
1997 May 29
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
FEATURES
PINNING
PIN
• High current (max. 800 mA)
• Low voltage (max. 40 V).
DESCRIPTION
1
2
3
emitter
base
APPLICATIONS
collector, connected to case
• Linear amplification and switching.
DESCRIPTION
3
1
handbook, halfpage
1
2
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.
2
3
MAM264
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
2N2222
open emitter
open base
−
−
60
V
V
2N2222A
75
VCEO
collector-emitter voltage
2N2222
−
−
−
−
30
V
V
2N2222A
40
IC
collector current (DC)
total power dissipation
DC current gain
transition frequency
2N2222
800
500
−
mA
Ptot
hFE
fT
T
amb ≤ 25 °C
mW
IC = 10 mA; VCE = 10 V
75
IC = 20 mA; VCE = 20 V; f = 100 MHz
250
300
−
−
MHz
MHz
ns
2N2222A
−
toff
turn-off time
ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA
250
1997 May 29
2
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
2N2222
−
−
60
V
V
2N2222A
75
VCEO
collector-emitter voltage
2N2222
open base
−
−
30
40
V
V
2N2222A
VEBO
emitter-base voltage
2N2222
open collector
−
−
−
−
−
−
−
5
V
V
2N2222A
6
IC
collector current (DC)
peak collector current
peak base current
total power dissipation
800
800
200
500
1.2
mA
mA
mA
mW
W
ICM
IBM
Ptot
T
amb ≤ 25 °C
case ≤ 25 °C
T
Tstg
Tj
storage temperature
−65
−
+150
200
+150
°C
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
350
UNIT
K/W
K/W
Rth j-a
Rth j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
146
1997 May 29
3
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
ICBO
collector cut-off current
2N2222
IE = 0; VCB = 50 V
−
−
10
10
nA
IE = 0; VCB = 50 V; Tamb = 150 °C
µA
ICBO
collector cut-off current
2N2222A
IE = 0; VCB = 60 V
−
10
10
10
−
nA
µA
nA
IE = 0; VCB = 60 V; Tamb = 150 °C
IC = 0; VEB = 3 V
−
IEBO
hFE
emitter cut-off current
DC current gain
−
IC = 0.1 mA; VCE = 10 V
35
50
75
50
100
IC = 1 mA; VCE = 10 V
−
IC = 10 mA; VCE = 10 V
−
IC = 150 mA; VCE = 1 V; note 1
IC = 150 mA; VCE = 10 V; note 1
IC = 10 mA; VCE = 10 V; Tamb = −55 °C
−
300
hFE
DC current gain
2N2222A
35
−
hFE
DC current gain
2N2222
IC = 500 mA; VCE = 10 V; note 1
30
40
−
−
2N2222A
VCEsat
VCEsat
VBEsat
VBEsat
collector-emitter saturation voltage
2N2222
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
−
−
400
1.6
mV
V
collector-emitter saturation voltage
2N2222A
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
−
−
300
1
mV
V
base-emitter saturation voltage
2N2222
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
−
−
1.3
2.6
V
V
base-emitter saturation voltage
2N2222A
IC = 150 mA; IB = 15 mA; note 1
IC = 500 mA; IB = 50 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 500 mV; f = 1 MHz
0.6
−
1.2
2
V
V
Cc
Ce
collector capacitance
emitter capacitance
2N2222A
−
8
pF
−
25
pF
fT
F
transition frequency
2N2222
IC = 20 mA; VCE = 20 V; f = 100 MHz
250
300
−
−
MHz
MHz
2N2222A
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
2N2222A
−
4
dB
1997 May 29
4
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Switching times (between 10% and 90% levels); see Fig.2
ton
td
tr
turn-on time
delay time
rise time
ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA
−
−
−
−
−
−
35
ns
ns
ns
ns
ns
ns
10
25
toff
ts
turn-off time
storage time
fall time
250
200
60
tf
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
V
B
V
C
BB
CC
n
R
R
V
(probe)
(probe)
o
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
DUT
i
R1
MLB826
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1997 May 29
5
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
seating plane
α
j
B
w
M
M
M
B
A
1
b
k
D
1
2
3
a
A
D
A
L
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D
j
k
L
w
α
1
5.31
4.74
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
mm
0.40
2.54
45°
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
B11/C7 type 3
JEDEC
EIAJ
SOT18/13
TO-18
97-04-18
1997 May 29
6
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 29
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 May 29
Document order number: 9397 750 02161
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