2N7002TRL [NXP]
TRANSISTOR 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal;型号: | 2N7002TRL |
厂家: | NXP |
描述: | TRANSISTOR 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal 晶体 晶体管 开关 光电二极管 |
文件: | 总12页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
2N7002
N-channel vertical D-MOS
transistor
April 1995
Product specification
File under Discrete Semiconductors, SC13b
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
FEATURES
QUICK REFERENCE DATA
• Direct interface to C-MOS, TTL,
etc.
SYMBOL
PARAMETER
CONDITIONS
MAX. UNIT
VDS
ID
drain-source voltage
drain current
60
180
5
V
• High-speed switching
DC value
mA
Ω
• No secondary breakdown.
RDS(on)
drain-source on-resistance
ID = 500 mA
VGS = 10 V
DESCRIPTION
VGS(th)
gate-source threshold
voltage
ID = 1 mA
3
V
VGS = VDS
N-channel enhancement mode
vertical D-MOS transistor in a SOT23
envelope. It is designed for use as a
Surface Mounted Device (SMD) in
thin and thick-film circuits, with
applications in relay, high-speed and
line transformer drivers.
PIN CONFIGURATION
d
s
ook, halfpage
3
PINNING - SOT23
PIN
1
DESCRIPTION
g
gate
1
2
MBB076 - 1
2
source
drain
Top view
MSB003
3
Marking code: 702
Fig.1 Simplified outline and symbol.
April 1995
2
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
drain-source voltage
CONDITIONS
MIN. MAX. UNIT
VDS
±VGSO
ID
−
−
−
−
60
V
gate-source voltage
drain current
open drain
DC value
40
V
180
800
mA
mA
IDM
drain current
peak value
Ptot
total power dissipation
Tamb = 25 °C
(note 1)
−
−
300
250
mW
mW
(note 2)
Tstg
Tj
storage temperature range
junction temperature
−65
150
150
°C
°C
−
Notes
1. Mounted on a ceramic substrate measuring 10 × 8 × 0.7 mm.
2. Mounted on a printed circuit board.
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
from junction to ambient
CONDITIONS
note 1
note 2
VALUE
UNIT
430
500
K/W
K/W
Notes
1. Mounted on a ceramic substrate measuring 10 × 8 × 0.7 mm.
2. Mounted on a printed circuit board.
April 1995
3
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ID = 10 µA
GS = 0
MIN. TYP. MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
60
90
−
V
V
IDSS
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
VDS = 48 V
VGS = 0
−
−
1
µA
nA
V
±IGSS
VGS(th)
RDS(on)
VDS = 0
±VGS = 15 V
−
−
10
3
ID = 1 mA
VGS = VDS
0.8
−
−
ID = 500 mA
VGS = 10 V
3.5
−
5
Ω
ID = 75 mA
−
5.3
−
Ω
VGS = 4.5 V
Yfs
transfer admittance
input capacitance
ID = 200 mA
VDS = 10 V
100 200
mS
pF
Ciss
VDS = 10 V
VGS = 0
f = 1 MHz
−
−
−
25
22
6
40
Coss
output capacitance
VDS = 10 V
30
10
pF
pF
VGS = 0
f = 1 MHz
Crss
feedback capacitance
VDS = 10 V
VGS = 0
f = 1 MHz
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 200 mA
VDD = 50 V
VGS = 0 to 10 V
−
−
−
−
10
15
ns
ns
toff
turn-off time
ID = 200 mA
VDD = 50 V
VGS = 0 to 10 V
April 1995
4
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
V
= 50 V
handbook, halfpage
DD
handbook, halfpage
INPUT
90 %
10 %
90 %
10 V
0 V
I
OUTPUT
D
50 Ω
10 %
MSA631
t
t
off
on
MBB692
Fig.2 Switching time test circuit.
Fig.3 Input and output waveforms.
MDA697
MLA223
1.6
300
handbook, halfpage
handbook, halfpage
I
D
P
tot
(A)
(mW)
1.2
200
V
= 10 V
GS
6 V
5 V
0.8
0.4
0
(2)
(1)
100
4 V
3 V
0
0
0
4
8
12
16
50
100
150
T
200
(°C)
V
(V)
DS
amb
(1) On ceramic substrate.
(2) On printed circuit board.
Fig.4 Power derating curve.
Fig.5 Typical output characteristics; Tj = 25 °C.
April 1995
5
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
MDA698
MDA699
1.2
20
handbook, halfpage
handbook, halfpage
R
DSon
I
(Ω)
D
(A)
16
V
= 3 V
GS
0.8
12
8
4 V
0.4
5 V
10 V
4
0
0
1
2
3
4
10
10
10
10
0
4
8
12
V
(V)
I
(mA)
GS
D
Fig.6 Typical transfer characteristic; VDS = 10 V;
Fig.7 Typical on-resistance as a function of drain
Tj = 25 °C.
current; Tj = 25 °C.
MDA694
80
handbook, halfpage
C
(pF)
60
40
20
0
C
C
iss
oss
C
rss
0
5
10
15
20
25
(V)
V
DS
Fig.8 Typical capacitances as a function of
drain-source voltage; VGS = 0; f = 1 MHz;
Tj = 25 °C.
April 1995
6
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
MDA696
MDA695
1.2
2.4
handbook, halfpage
handbook, halfpage
k
k
1.1
2
(1)
1
1.6
(2)
0.9
1.2
0.8
0.8
0.4
0.7
−50
0
50
100
150
−50
0
50
100
150
T (°C)
T (°C)
j
j
(1) ID = 500 mA; VGS = 10 V.
(2) D = 75 mA; VGS = 4.5 V.
I
Fig.10 Temperature coefficient of gate-source
threshold voltage;
Fig.9 Temperature coefficient of drain-source
on-resistance;
VGS (th) at Tj
RDS (on) at Tj
k = --------------------------------------------
VGS (th) at 25 °C
k = ----------------------------------------------
RDS (on) at 25 °C
typical RDS(on)
.
typical VGS(th) at 1 mA.
April 1995
7
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
April 1995
8
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
9
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
NOTES
April 1995
10
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
2N7002
NOTES
April 1995
11
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
137107/00/01/pp12
Date of release: April 1995
Document order number: 9397 750 02442
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