2N7002T_15 [UTC]
N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING;
| 型号： | 2N7002T_15 |
| 厂家： | 
Unisonic Technologies |
| 描述： | N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING 开关 |
| 文件： | 总3页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N7002T
Power MOSFET
300mA, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 2N7002T uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* High Density Cell Design for Low RDS(ON)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
.
* High Saturation Current Capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
SOT-523
Packing
3
Lead Free
Halogen Free
1
2
2N7002TL-AN3-R
2N7002TG-AN3-R
Tape Reel
S
G
D
MARKING
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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QW-R502-542.B
2N7002T
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
VDSS
RATINGS
60
UNIT
V
Drain-Source Voltage
Drain-Gate Voltage (RGS ≤1MΩ)
VDGR
60
V
Continuous
±20
±40
300
Gate Source Voltage
Drain Current
VGSS
ID
V
Non Repetitive(tp<50μs)
Continuous
mA
Pulsed
800
Power Dissipation
200
mW
mW/°C
°C
PD
Derated Above 25°C
Junction Temperature
Storage Temperature
1.6
TJ
+ 150
-55 ~ +150
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
°C/W
Junction to Ambient
θJA
625 (Note1)
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS=0V, ID=10μA
60
1
V
VDS=60V, VGS =0V
VGS =20V, VDS=0V
VGS =-20V, VDS=0V
1
μA
nA
nA
IGSSF
IGSSR
100
-100
Gate-Source Leakage Current
ON CHARACTERISTICS (Note2)
Gate Threshold Voltage
VGS(TH)
VDS (ON)
VGS = VDS, ID=250μA
2.1
0.6
2.5
3.75
1.5
V
V
V
GS = 10V, ID=300mA
VGS = 5.0V, ID=50mA
GS=10V, ID=300mA,TJ=125°C
Drain-Source On-Voltage
0.09
V
13.5
7.5
Ω
Ω
Static Drain-Source On-Resistance
RDS (ON)
VGS =5.0V, ID=50mA
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
20
11
4
50
25
5
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
V
V
V
V
DD=30V, RL=150Ω, ID=200mA,
GS =10V, RGEN =25Ω
Turn-On Time
Turn-Off Time
tON
20
20
nS
nS
DD=30V, RL=25Ω, ID=200mA,
GS=10V, RGEN =25Ω
tOFF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Pulsed Drain-Source Diode
Forward Current
VSD
VGS=0V, Is=300mA (Note )
0.88
1.5
0.8
V
A
ISM
Maximum Continuous Drain-Source
Diode Forward Current
Is
300
mA
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-542.B
www.unisonic.com.tw
2N7002T
Power MOSFET
TEST CIRCUIT AND WAVEFORM
VDD
RL
VIN
VOUT
D
VGS
RGEN
DUT
G
S
Fig. 1
tON
tOFF
tD(ON)
tD(OFF)
tR
tF
90%
90%
Output, VOUT
10%
50%
10%
90%
Inverted
Input, VIN
10%
50%
Pulse Width
Fig. 2 Switching Waveforms
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-542.B
www.unisonic.com.tw
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