4030B [NXP]
Quadruple exclusive-OR gate; 四倍异或门型号: | 4030B |
厂家: | NXP |
描述: | Quadruple exclusive-OR gate |
文件: | 总3页 (文件大小:32K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
For a complete data sheet, please also download:
• The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
• The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
HEF4030B
gates
Quadruple exclusive-OR gate
January 1995
Product specification
File under Integrated Circuits, IC04
Philips Semiconductors
Product specification
HEF4030B
gates
Quadruple exclusive-OR gate
DESCRIPTION
The HEF4030B provides the positive quadruple
exclusive-OR function. The outputs are fully buffered for
highest noise immunity and pattern insensitivity of output
impedance.
Fig.2 Pinning diagram.
HEF4030BP(N): 14-lead DIL; plastic
(SOT27-1)
HEF4030BD(F): 14-lead DIL; ceramic (cerdip)
(SOT73)
HEF4030BT(D): 14-lead SO; plastic
(SOT108-1)
( ): Package Designator North America
Fig.1 Functional diagram.
Fig.2 Logic diagram (one gate).
TRUTH TABLE
I1
FAMILY DATA, IDD LIMITS category GATES
See Family Specifications
I2
O1
L
H
L
L
L
L
H
H
L
H
H
H
Notes
1. H = HIGH state (the more positive voltage)
L = LOW state (the less positive voltage)
January 1995
2
Philips Semiconductors
Product specification
HEF4030B
gates
Quadruple exclusive-OR gate
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
TYPICAL EXTRAPOLATION
FORMULA
SYMBOL
TYP.
MAX.
Propagation delays
In → On
5
85
35
30
75
30
25
60
30
20
60
30
20
175
75
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
57 ns + (0,55 ns/pF) CL
24 ns + (0,23 ns/pF) CL
22 ns + (0,16 ns/pF) CL
47 ns + (0,55 ns/pF) CL
19 ns + (0,23 ns/pF) CL
17 ns + (0,16 ns/pF) CL
10 ns + (1,0 ns/pF) CL
9 ns + (0,42 ns/pF) CL
6 ns + (0,28 ns/pF) CL
10 ns + (1,0 ns/pF) CL
9 ns + (0,42 ns/pF) CL
6 ns + (0,28 ns/pF) CL
HIGH to LOW
10
15
5
tPHL
tPLH
tTHL
tTLH
55
150
65
LOW to HIGH
10
15
5
50
Output transition times
HIGH to LOW
120
60
10
15
5
40
120
60
LOW to HIGH
10
15
40
VDD
V
TYPICAL FORMULA FOR P (µW)
2
Dynamic power
dissipation per
package (P)
5
10
15
1 100 fi + ∑(fo CL) × VDD
where
2
4 900 fi + ∑(fo CL) × VDD
fi = input freq. (MHz)
2
14 400 fi + ∑(fo CL) × VDD
fo = output freq. (MHz)
CL = load capacitance (pF)
∑(foCL) = sum of outputs
VDD = supply voltage (V)
January 1995
3
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