600F1R5BT250XT [NXP]
RF Power GaN Transistor;型号: | 600F1R5BT250XT |
厂家: | NXP |
描述: | RF Power GaN Transistor |
文件: | 总8页 (文件大小:221K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet: Technical Data
Document identifier: A3G18D510--04S
Rev. 0 — August 2020
RF Power GaN Transistor
This 56 W symmetrical Doherty RF power GaN transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 1805 to 2200 MHz.
A3G18D510--04S
This part is characterized and performance is guaranteed for applications
operating in the 1805 to 2200 MHz band. There is no guarantee of performance
when this part is used in applications designed outside of these frequencies.
1805–2200 MHz, 56 W Avg., 48 V
AIRFAST RF POWER GaN
TRANSISTOR
2000 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,
DQA = 250 mA, VGSB = –5.0 Vdc, Pout = 56 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
I
G
Output PAR
(dB)
ACPR
(dBc)
ps
D
Frequency
1805 MHz
1995 MHz
2170 MHz
(dB)
16.0
16.8
15.4
(%)
54.3
52.2
53.9
8.0
7.8
7.6
–26.4
–31.9
–33.8
NI--780S--4L
Features
High terminal impedances for optimal broadband performance
Advanced high performance in--package Doherty
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating
conditions
Carrier
RF /V
RF /V
outA DSA
3
4
1
2
inA GSA
RF /V
inB GSB
RF /V
outB DSB
Peaking
(Top View)
Figure 1. Pin Connections
NXP reserves the right to change the detail specifications as may be required to permit
improvements in the design of its products.
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Symbol
Value
125
Unit
Vdc
Vdc
Vdc
mA
C
Drain--Source Voltage
V
DSS
Gate--Source Voltage
V
–8, 0
GS
DD
Operating Voltage
V
0 to +55
25
Maximum Forward Gate Current, I
Storage Temperature Range
, @ T = 25C
G (A+B)
I
GMAX
C
T
stg
–65 to +150
–55 to +150
–55 to +225
275
Case Operating Temperature Range
T
C
C
Operating Active Die Surface Temperature Range
T
J
C
(1)
Maximum Channel Temperature
T
CH
C
Table 2. Thermal Characteristics
Characteristic
Symbol
(IR)
Value
Unit
(2)
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
R
0.83
C/W
JC
Case Temperature 72C, P = 68 W
D
(3)
Thermal Resistance by Finite Element Analysis, Channel--to--Case
R
CHC
1.1
C/W
Case Temperature 72C, P = 68 W
(FEA)
D
Table 3. ESD Protection Characteristics
Test Methodology
Class
1B
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
IV
Table 4. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(4)
Off Characteristics
Off--State Drain Leakage
I
D(BR)
(V = 150 Vdc, V = –8 Vdc)
Carrier
Peaking
—
—
—
—
24.3
24.3
mAdc
mAdc
DS
GS
(V = 150 Vdc, V = –8 Vdc)
DS
GS
On Characteristics — Side A, Carrier
Gate Threshold Voltage
V
–3.8
–3.7
–3.0
–3.2
—
–2.3
–2.7
—
Vdc
Vdc
GS(th)
(V = 10 Vdc, I = 24.3 mAdc)
DS
D
Gate Quiescent Voltage
(V = 48 Vdc, I = 250 mAdc, Measured in Functional Test)
V
GSA(Q)
DD
D
Gate--Source Leakage Current
(V = 150 Vdc, V = –8 Vdc)
I
–12.2
mAdc
GSS
DS
GS
On Characteristics — Side B, Peaking
Gate Threshold Voltage
V
–3.8
–3.3
—
–2.3
—
Vdc
GS(th)
(V = 10 Vdc, I = 24.3 mAdc)
DS
D
Gate--Source Leakage Current
(V = 150 Vdc, V = –8 Vdc)
I
–12.2
mAdc
GSS
DS
GS
1. Reliability tests were conducted at 225C. Operations with T at 275C will reduce median time to failure.
CH
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. R
(FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated
CHC
[A + B/(T + 273)]
by the expression MTTF (hours) = 10
, where T is the channel temperature in degrees Celsius, A = –10.3 and B = 8263.
4. Each side of device measured separately.
(continued)
A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020
Data Sheet: Technical Data
2 / 8
NXP Semiconductors
Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1,2)
Functional Tests
(In NXP Doherty Production Test Fixture, 50 ohm system) V = 48 Vdc, I
= 250 mA, V = –5.0 Vdc,
GSB
DD
DQA
P
= 56 W Avg., f = 1805 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
out
ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. [See note on correct biasing sequence.]
Power Gain
G
15.0
44.3
16.0
54.3
18.0
—
dB
%
ps
D
Drain Efficiency
P
@ 3 dB Compression Point, CW
P3dB
53.6
55.1
—
dBm
dBc
out
Adjacent Channel Power Ratio
ACPR
—
–26.4
–21.9
Wideband Ruggedness (In NXP Doherty Production Test Fixture, 50 ohm system) I
= 250 mA, V
= –5.0 Vdc, f = 1995 MHz, Additive
GSB
DQA
White Gaussian Noise (AWGN) with 10 dB PAR
ISBW of 400 MHz at 55 Vdc, 228 W Avg. Modulated Output Power
(8.5 dB Input Overdrive from 228 W Avg. Modulated Output Power)
No Device Degradation
Typical Performance (In NXP Doherty Production Test Fixture, 50 ohm system) V = 48 Vdc, I
= 250 mA, V = –5.0 Vdc,
GSB
DD
DQA
1805–2170 MHz Bandwidth
(2)
P
@ 3 dB Compression Point
P3dB
—
—
355
–25
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
the 1805–2170 MHz bandwidth)
VBW Resonance Point
VBW
—
260
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 365 MHz Bandwidth @ P = 56 W Avg.
G
—
—
1.7
—
—
dB
out
F
Gain Variation over Temperature
G
0.013
dB/C
(–40C to +85C)
Output Power Variation over Temperature
P1dB
—
0.013
—
dB/C
(–40C to +85C)
Table 5. Ordering Information
Device
Tape and Reel Information
Package
A3G18D510--04SR3
R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel
NI--780S--4L
1. Part internally input matched.
2. P3dB = P
+ 7.0 dB where P
is the average output power measured using an unclipped W--CDMA single--carrier input signal where
avg
avg
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors in a Doherty Configuration
Bias ON the device
1. Set gate voltage V
and V
to –5 V.
GSB
GSA
2. Set drain voltage V
and V
to nominal supply voltage (+48 V).
DSB
DSA
3. Increase V
4. Increase V
(carrier side) until I
current is attained.
DQA
GSA
GSB
(peaking side) to target bias voltage.
5. Apply RF input power to desired level.
Bias OFF the device
1. Disable RF input power.
2. Adjust gate voltage V
and V
to –5 V.
GSB
GSA
3. Adjust drain voltage V
and V
to 0 V. Allow adequate time
DSB
DSA
for drain voltage to reduce to 0 V from external drain capacitors.
4. Disable V and V
.
GSB
GSA
A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020
Data Sheet: Technical Data
3 / 8
NXP Semiconductors
V
GGA
V
DDA
C15
C2
C16
R4
C17
C1
A3G18D510-04S
Rev. 3
C18
C23
C3
C5
R2
C19
C6
C7
C4
C20
C21 C22
C25
Z1
C9
R3
C24
C8
C10
cut out
area
C11
C12
R1
R5
D135295
C26
C27
C14
C13
C28
V
GGB
V
DDB
aaa--038671
Figure 2. A3G18D510--04S Production Test Circuit Component Layout
Table 6. A3G18D510--04S Production Test Circuit Component Designations and Values
Part
C1, C13, C16, C27
Description
10 F Chip Capacitor
Part Number
C5750X7S2A106M230KB
Manufacturer
TDK
C2, C14, C17, C21, C24, C26
15 pF Chip Capacitor
600F150JT250XT
600F0R4BT250XT
600F110JT250XT
600F1R6BT250XT
600F1R0BT250XT
600F0R8BT250XT
600F1R5BT250XT
600F2R0BT250XT
MCGPR100V227M16X26
600F1R2BT250XT
600F0R2BT250XT
C10A50Z4
ATC
C3
0.4 pF Chip Capacitor
ATC
C4, C5, C9, C10
11 pF Chip Capacitor
ATC
C6
1.6 pF Chip Capacitor
ATC
C7, C22
C8, C18
C11, C20
C12
1 pF Chip Capacitor
ATC
0.8 pF Chip Capacitor
ATC
1.5 pF Chip Capacitor
ATC
2 pF Chip Capacitor
ATC
C15, C28
C19, C23
C25
220 F, 100 V Electrolytic Capacitor
1.2 pF Chip Capacitor
Multicomp
ATC
0.2 pF Chip Capacitor
ATC
R1
50 , 10 W Termination Chip Resistor
9.1 , 1/4 W Chip Resistor
7.5 , 1/4 W Chip Resistor
3.9 , 1/4 W Chip Resistor
4.3 , 1/4 W Chip Resistor
1700–2000 MHz, 90, 3 dB Hybrid Coupler
Anaren
Vishay
Vishay
Vishay
Vishay
Anaren
MTL
R2
CRCW12069R10FKEA
CRCW12067R50FKEA
CRCW12063R90FKEA
CRCW12064R30FKEA
X3C19P1-03S
R3
R4
R5
Z1
PCB
RO4350B, 0.020, = 3.66
D135295
r
A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020
Data Sheet: Technical Data
4 / 8
NXP Semiconductors
Package Information
A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020
Data Sheet: Technical Data
5 / 8
NXP Semiconductors
A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020
Data Sheet: Technical Data
6 / 8
NXP Semiconductors
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
.s2p File
Development Tools
Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Aug. 2020
Initial release of data sheet
A3G18D510--04S Airfast RF Power GaN Transistor, Rev. 0, August 2020
Data Sheet: Technical Data
7 / 8
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us
Home Page:
nxp.com
Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address: nxp.com/SalesTermsandConditions.
NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service
names are the property of their respective owners.
E NXP B.V. 2020
All rights reserved.
Date of release: August 2020
Document identifier: A3G18D510--04S
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