600F1R8BW250XT [NXP]
Airfast RF Power LDMOS Transistor;
| 型号： | 600F1R8BW250XT |
| 厂家： | 
NXP |
| 描述： | Airfast RF Power LDMOS Transistor |
| 文件： | 总13页 (文件大小：313K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A3V26S004N
Airfast RF Power LDMOS Transistor
Rev. 0 — December 2020
Data Sheet: Technical Data
This 26 dBm RF power LDMOS transistor is designed for cellular base
station applications covering the frequency range of 2496 to 2690 MHz.
2600 MHz
A3V26S004N
Typical Single--Carrier W--CDMA Reference Circuit Performance:
DD = 42 Vdc, IDQ = 17 mA, Pout = 23.5 dBm Avg., Input Signal PAR =
9.9 dB @ 0.01% Probability on CCDF.(1)
V
G
(%)
Output PAR
(dB)
ACPR
(dBc)
ps
D
2496–2690 MHz, 26 dBm Avg., 48 V
AIRFAST RF POWER LDMOS
TRANSISTOR
Frequency
2515 MHz
2595 MHz
2675 MHz
(dB)
23.2
23.0
22.0
15.1
15.5
14.8
10.3
9.6
–35.0
–37.0
–37.7
9.3
1. All data measured in reference circuit with device soldered to printed circuit board.
Features
Designed for low complexity analog or digital linearization systems
Universal broadband driver
Optimized for massive MIMO active antenna systems for 5G base stations
DFN 4.5 4
PLASTIC
V
1
2
3
6
5
4
N.C.
GS
N.C.
V
DS
GND
N.C.
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
NXP reserves the right to change the detail specifications as may be required to permit
improvements in the design of its products.
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Vdc
C
Drain--Source Voltage
V
–0.5, +105
–6.0, +10
55, +0
DSS
Gate--Source Voltage
V
GS
DD
Operating Voltage
V
Storage Temperature Range
Case Operating Temperature Range
T
stg
–65 to +150
–40 to +150
–40 to +225
T
C
C
(1,2)
Operating Junction Temperature Range
T
J
C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
8.0
C/W
JC
Case Temperature 125C, 26.0 dBm Avg., W--CDMA, 48 Vdc, I = 17 mA,
DQ
2595 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Class
1C
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
C2a
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
10
1
Adc
Adc
Adc
DSS
DSS
GSS
(V = 105 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 55 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
1
(V = 8 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 10 Adc)
V
V
0.7
1.6
0.2
1.2
1.78
0.6
1.7
1.9
0.9
Vdc
Vdc
Vdc
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 48 Vdc, I = 16 mAdc, Measured in Functional Test)
DD
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 75 mAdc)
V
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
A3V26S004N Airfast RF Power LDMOS Transistor, Rev. 0, December 2020
Data Sheet: Technical Data
2 / 13
NXP Semiconductors
Table 5. Electrical Characteristics (T = 25C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(1)
Functional Tests
(In NXP Production Test Fixture, 50 ohm system) V = 48 Vdc, I = 16 mA, P = 26 dBm Avg., f = 2690 MHz,
DD
DQ
out
1--tone CW.
Power Gain
G
19.5
18.0
33.5
23.3
21.9
35.0
26.0
—
dB
%
ps
D
Drain Efficiency
P
@ 6 dB Compression Point
P6dB
—
dBm
out
Wideband Ruggedness (In NXP Reference Circuit, 50 ohm system) I = 17 mA, f = 2595 MHz, Additive White Gaussian Noise (AWGN)
DQ
with 10 dB PAR
ISBW of 400 MHz at 55 Vdc, 1.5 W Avg. Modulated Output Power
(3 dB Input Overdrive from 0.7 W Avg. Modulated Output Power)
No Device Degradation
(2)
Typical Performance
(In NXP Reference Circuit, 50 ohm system) V = 42 Vdc, I = 17 mA, 2515–2675 MHz Bandwidth
DD DQ
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW
—
170
—
MHz
dB
res
Gain Flatness in 160 MHz Bandwidth @ P = 23.5 dBm Avg.
G
F
—
0.7
—
out
Fast CW, 27 ms Sweep
P
@ 3 dB Compression Point
P3dB
—
—
3.1
—
—
W
out
AM/PM
(Maximum value measured at the P3dB compression point across
–23
the 2515–2675 MHz bandwidth)
Gain Variation over Temperature
(–40C to +85C)
G
—
—
0.017
0.004
—
—
dB/C
dB/C
Output Power Variation over Temperature
P1dB
(–40C to +85C)
Table 6. Ordering Information
Device
Tape and Reel Information
T6 Suffix = 5,000 Units, 12 mm Tape Width, 13--inch Reel
Package
A3V26S004NT6
DFN 4.5 4
1. Part internally input matched.
2. All data measured in fixture with device soldered to printed circuit board.
A3V26S004N Airfast RF Power LDMOS Transistor, Rev. 0, December 2020
Data Sheet: Technical Data
3 / 13
NXP Semiconductors
C14
Cꢀ11
C13 C12
V
GG
V
DD
C10
C5
C9
C8
C7
C6
Q1
C2
C1
C4
C3
D135421
A3V26S004N
Rev. B
aaa--037822
Note: All data measured in reference circuit with device soldered to printed circuit board.
Figure 2. A3V26S004N Reference Circuit Component Layout
Table 7. A3V26S004N Reference Circuit Component Designations and Values
Part
Description
6.8 pF Chip Capacitor
Part Number
Manufacturer
C1
600F6R8BW250XT
ATC
C2
1.0 pF Chip Capacitor
1.8 pF Chip Capacitor
10 pF Chip Capacitor
20 pF Chip Capacitor
0.1 F Chip Capacitor
1 F Chip Capacitor
10 F Chip Capacitor
10 F Chip Capacitor
1 F Chip Capacitor
0.1 F Chip Capacitor
2.2 nF Chip Capacitor
RF Power LDMOS Transistor
600F1R0BW250XT
600F1R8BW250XT
600F100FW250XT
600F200FW250XT
GRM319R71H104KA
GRM32ER72A105KA
GRM31CR61H106KA
GRM21BR61C106KE
08055C105KAT2A
GRM188R71H104KA
GRM1885C1H222JA
A3V26S004N
ATC
C3
ATC
C4
ATC
C5, C6
C7
ATC
Murata
Murata
Murata
Murata
AVX
C8
C9, C10
C11
C12
C13
C14
Q1
Murata
Murata
NXP
PCB
Rogers RO4350B, 0.020, = 3.66
D135421
MTL
r
A3V26S004N Airfast RF Power LDMOS Transistor, Rev. 0, December 2020
Data Sheet: Technical Data
4 / 13
NXP Semiconductors
A3V26S4
ALYWZ
Figure 3. Product Marking
A3V26S004N Airfast RF Power LDMOS Transistor, Rev. 0, December 2020
Data Sheet: Technical Data
5 / 13
NXP Semiconductors
Package Information
A3V26S004N Airfast RF Power LDMOS Transistor, Rev. 0, December 2020
Data Sheet: Technical Data
6 / 13
NXP Semiconductors
A3V26S004N Airfast RF Power LDMOS Transistor, Rev. 0, December 2020
Data Sheet: Technical Data
7 / 13
NXP Semiconductors
A3V26S004N Airfast RF Power LDMOS Transistor, Rev. 0, December 2020
Data Sheet: Technical Data
8 / 13
NXP Semiconductors
A3V26S004N Airfast RF Power LDMOS Transistor, Rev. 0, December 2020
Data Sheet: Technical Data
9 / 13
NXP Semiconductors
A3V26S004N Airfast RF Power LDMOS Transistor, Rev. 0, December 2020
Data Sheet: Technical Data
10 / 13
NXP Semiconductors
A3V26S004N Airfast RF Power LDMOS Transistor, Rev. 0, December 2020
Data Sheet: Technical Data
11 / 13
NXP Semiconductors
Product Documentation, Software and Tools
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
Electromigration MTTF Calculator
.s2p File
Development Tools
Printed Circuit Boards
Revision History
The following table summarizes revisions to this document.
Revision
Date
Description
0
Dec. 2020
Initial release of data sheet
A3V26S004N Airfast RF Power LDMOS Transistor, Rev. 0, December 2020
Data Sheet: Technical Data
12 / 13
Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
granted hereunder to design or fabricate any integrated circuits based on the information
in this document. NXP reserves the right to make changes without further notice to any
products herein.
How to Reach Us
Home Page
nxp.com
Web Support:
nxp.com/support
NXP makes no warranty, representation, or guarantee regarding the suitability of its
products for any particular purpose, nor does NXP assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating
parameters, including “typicals,” must be validated for each customer application by
customer’s technical experts. NXP does not convey any license under its patent rights
nor the rights of others. NXP sells products pursuant to standard terms and conditions of
sale, which can be found at the following address: nxp.com/SalesTermsandConditions.
NXP, the NXP logo, Freescale, the Freescale logo and Airfast are trademarks of
NXP B.V. All other product or service names are the property of their respective owners.
E NXP B.V. 2020
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: December2020
Document identifier: A3V26S004N
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