74ABT125PWDH [NXP]
Quad buffer 3-State; 四缓冲器三态
| 型号： | 74ABT125PWDH |
| 厂家： | 
NXP |
| 描述： | Quad buffer 3-State |
| 文件： | 总10页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
74ABT125
Quad buffer (3-State)
Product specification
Supersedes data of 1996 Mar 05
1998 Jan 16
IC23 Data Handbook
Philips
Semiconductors
Philips Semiconductors
Product specification
Quad buffer (3-State)
74ABT125
FEATURES
• Quad bus interface
• 3-State buffers
DESCRIPTION
The 74ABT125 high-performance BiCMOS device combines low
static and dynamic power dissipation with high speed and high
output drive.
• Live insertion/extraction permitted
• Output capability: +64mA/–32mA
• Latch-up protection exceeds 500mA per Jedec Std 17
The 74ABT125 device is a quad buffer that is ideal for driving bus
lines. The device features four Output Enables (OE0, OE1, OE2,
OE3), each controlling one of the 3-State outputs.
• ESD protection exceeds 2000V per MIL STD 883 Method 3015
and 200V per Machine Model
• Power-up 3-State
• Inputs are disabled during 3-State mode
QUICK REFERENCE DATA
CONDITIONS
= 25°C; GND = 0V
SYMBOL
PARAMETER
TYPICAL
UNIT
T
amb
t
t
Propagation delay
An to Yn
PLH
PHL
C = 50pF; V = 5V
2.9
4
ns
pF
pF
µA
L
CC
C
Input capacitance
V = 0V or V
I CC
IN
Outputs disabled;
= 0V or V
C
Output capacitance
Total supply current
7
OUT
CCZ
V
O
CC
I
Outputs disabled; V =5.5V
65
CC
ORDERING INFORMATION
PACKAGES
TEMPERATURE RANGE OUTSIDE NORTH AMERICA
NORTH AMERICA
DWG NUMBER
SOT27-1
14-Pin Plastic DIP
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
74ABT125 N
74ABT125 D
74ABT125 DB
74ABT125 PW
74ABT125 N
74ABT125 D
14-Pin plastic SO
SOT108-1
SOT337-1
SOT402-1
14-Pin Plastic SSOP Type II
14-Pin Plastic TSSOP Type I
74ABT125 DB
74ABT125PW DH
PIN DESCRIPTION
PIN NUMBER
2, 5, 9, 12
3, 6, 8, 11
1, 4, 10, 13
7
SYMBOL
NAME AND FUNCTION
A0 – A3
Y0 – Y3
OE0 – OE3
GND
Data inputs
Data outputs
Output enable inputs (active-Low)
Ground (0V)
14
V
CC
Positive supply voltage
PIN CONFIGURATION
LOGIC SYMBOL
1
OE0
3
6
2
A0
Y0
Y1
Y2
Y3
14
OE0
A0
1
2
3
4
5
6
7
V
CC
4
10
13
13 OE3
12 A3
OE1
Y0
5
A1
A2
A3
OE1
A1
11 Y3
OE2
10 OE2
8
9
Y1
9
8
A2
Y2
GND
OE3
12
11
SA00025
SA00026
2
1998 Jan 16
853–1606 18868
Philips Semiconductors
Product specification
Quad buffer (3-State)
74ABT125
LOGIC SYMBOL (IEEE/IEC)
FUNCTION TABLE
INPUTS
OUTPUTS
OEn
L
An
L
Yn
L
1
EN
1
3
6
2
4
L
H
H
Z
5
H
X
10
8
H = High voltage level
9
13
12
L
X
Z
= Low voltage level
= Don’t care
= High impedance ”off” state
11
SA00027
1, 2
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
DC supply voltage
CONDITIONS
RATING
–0.5 to +7.0
–18
UNIT
V
V
CC
I
IK
DC input diode current
V < 0
I
mA
V
3
V
I
DC input voltage
–1.2 to +7.0
–50
I
DC output diode current
V
O
< 0
mA
V
OK
3
V
DC output voltage
output in Off or High state
output in Low state
–0.5 to +5.5
128
OUT
OUT
I
DC output current
mA
°C
T
stg
Storage temperature range
–65 to 150
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL
PARAMETER
UNIT
MIN
4.5
0
MAX
V
CC
DC supply voltage
5.5
V
V
V
I
Input voltage
V
CC
V
High-level input voltage
Low-level input voltage
High-level output current
Low-level output current
Input transition rise or fall rate
2.0
V
IH
V
0.8
–32
64
V
IL
I
mA
mA
ns/V
°C
OH
I
OL
∆t/∆v
0
10
T
amb
Operating free-air temperature range
–40
+85
3
1998 Jan 16
Philips Semiconductors
Product specification
Quad buffer (3-State)
74ABT125
DC ELECTRICAL CHARACTERISTICS
LIMITS
T
= –40°C
to +85°C
amb
SYMBOL
PARAMETER
TEST CONDITIONS
T
amb
= +25°C
UNIT
Min
Typ
Max
Min
Max
V
Input clamp voltage
V
V
V
V
V
V
V
= 4.5V; I = –18mA
–0.9
2.9
–1.2
–1.2
V
V
IK
CC
CC
CC
CC
CC
CC
CC
IK
= 4.5V; I = –3mA; V = V or V
2.5
3.0
2.0
2.5
3.0
2.0
OH
I
IL
IH
IH
V
OH
High–level output voltage
= 5.0V; I = –3mA; V = V or V
3.4
V
OH
I
IL
= 4.5V; I = –32mA; V = V or V
IH
2.4
V
OH
I
IL
V
OL
Low–level output voltage
Input leakage current
= 4.5V; I = 64mA; V = V or V
IH
0.35
±0.01
±5.0
0.55
±1.0
±100
0.55
±1.0
±100
V
OL
I
IL
I
= 5.5V; V = GND or 5.5V
µA
µA
I
I
I
Power-off leakage current
Power-up/down 3-State
= 0.0V; V or V ≤ 4.5V
O I
OFF
V
CC
V
OE
= 2.1V; V = 0.5V; V GND or V
;
O
I
CC
I
/I
±5.0
±50
±50
µA
PU PD
3
output current
= Don’t care
I
3-State output High current
3-State output Low current
Output High leakage current
V
V
V
V
V
V
V
= 5.5V; V = 2.7V; V = V or V
1.0
–1.0
5.0
50
–50
50
50
–50
50
µA
µA
µA
mA
µA
mA
OZH
CC
CC
CC
CC
CC
CC
CC
O
I
IL
IH
IH
I
= 5.5V; V = 0.5V; V = V or V
O I IL
OZL
CEX
I
= 5.5V; V = 5.5V; V = GND or V
O I CC
1
I
O
Output current
= 5.5V; V = 2.5V
–50
–100
65
–180
250
15
–50
–180
250
30
O
I
= 5.5V; Outputs High, V = GND or V
CCH
I
CC
I
Quiescent supply current
= 5.5V; Outputs Low, V = GND or V
12
CCL
I
CC
= 5.5V; Outputs 3–State;
I
65
0.5
50
250
1.5
250
1.5
50
1.5
250
1.5
µA
mA
µA
CCZ
V = GND or V
I
CC
Outputs enabled, one data input at 3.4V,
other inputs at V or GND; V = 5.5V
CC
CC
Additional supply current per Outputs 3-State, one data input at 3.4V, other
∆I
CC
2
input pin
inputs at V or GND; V = 5.5V
CC CC
Outputs 3-State, one enable input at 3.4V,
other inputs at V or GND; V = 5.5V
0.5
mA
CC
CC
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. This parameter is valid for any V between 0V and 2.1V, with a transition time of up to 10msec. From V = 2.1V to V = 5V ± 10% a
CC
CC
CC
transition time of up to 100µsec is permitted.
AC CHARACTERISTICS
GND = 0V; t = t = 2.5ns; C = 50pF, R = 500Ω
R
F
L
L
LIMITS
T
V
= +25°C
= +5.0V
T
= –40°C to +85°C
amb
CC
amb
V
SYMBOL
PARAMETER
WAVEFORM
UNIT
= +5.0V ±0.5V
CC
MIN
TYP
MAX
MIN
MAX
t
t
Propagation delay
An to Yn
1.0
1.0
2.8
3.1
4.1
4.6
1.0
1.0
4.6
4.9
PLH
PHL
1
2
2
ns
ns
ns
t
Output enable time
to High and Low level
1.0
1.0
3.2
4.2
5.0
6.2
1.0
1.0
5.9
6.8
PZH
t
PZL
t
Output disable time
from High and Low level
1.0
1.5
4.1
2.8
5.4
5.0
1.0
1.5
6.2
5.5
PHZ
t
PLZ
4
1998 Jan 16
Philips Semiconductors
Product specification
Quad buffer (3-State)
74ABT125
AC WAVEFORMS
V
M
= 1.5V, V = GND to 3.0V
IN
3 V
0 V
OE INPUT
V
V
M
t
M
t
1.5V
1.5V
INPUT
PLZ
PZL
3.5V
t
t
PHL
PLH
V
OH
Yn OUTPUT
Yn OUTPUT
V
V
M
M
V
+ 0.3V
OL
1.5V
1.5V
V
OL
t
OUTPUT
t
PHZ
PZH
V
OL
V
OH
SA00028
V
– 0.3V
0V
OH
Waveform 1. Waveforms Showing the Input (An) to
Output (Yn) Propagation Delays
SA00029
Waveform 2. Waveforms Showing the 3-State
Output Enable and Disable Times
TEST CIRCUIT AND WAVEFORMS
7 V
500 Ω
S1
From Output
Under Test
Open
GND
500 Ω
C
= 50 pF
L
Load Circuit
TEST
S1
t
open
7 V
pd
t
/t
PLZ PZL
t
/t
open
PHZ PZH
DEFINITIONS
C
=
Load capacitance includes jig and probe capacitance;
see AC CHARACTERISTICS for value.
L
SA00012
5
1998 Jan 16
Philips Semiconductors
Product specification
Quad buffer (3-State)
74ABT125
DIP14: plastic dual in-line package; 14 leads (300 mil)
SOT27-1
6
1998 Jan 16
Philips Semiconductors
Product specification
Quad buffer (3-State)
74ABT125
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
7
1998 Jan 16
Philips Semiconductors
Product specification
Quad buffer (3-State)
74ABT125
SSOP14: plastic shrink small outline package; 14 leads; body width 5.3 mm
SOT337-1
8
1998 Jan 16
Philips Semiconductors
Product specification
Quad buffer (3-State)
74ABT125
TSSOP14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm
SOT402-1
9
1998 Jan 16
Philips Semiconductors
Product specification
Quad buffer (3-State)
74ABT125
DEFINITIONS
Data Sheet Identification
Product Status
Definition
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Objective Specification
Formative or in Design
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Preliminary Specification
Product Specification
Preproduction Product
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. PhilipsSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertesting
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
orsystemswheremalfunctionofaPhilipsSemiconductorsandPhilipsElectronicsNorthAmericaCorporationProductcanreasonablybeexpected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Philips Semiconductors and Philips Electronics North America Corporation
register eligible circuits under the Semiconductor Chip Protection Act.
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
(print code)
Date of release: July 1994
9397-750-03613
Document order number:
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