74AHC1G09GW [NXP]

2-input AND gate with open-drain output; 2输入与门与开漏输出


型号：	74AHC1G09GW
厂家：	NXP
描述：	2-input AND gate with open-drain output 2输入与门与开漏输出栅极逻辑集成电路光电二极管
文件：	总11页 (文件大小：64K)
中文：	中文翻译
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74AHC1G09

2-input AND gate with open-drain output

Rev. 01 — 26 September 2005

Product data sheet

1. General description

The 74AHC1G09 is a high-speed Si-gate CMOS device.

The 74AHC1G09 provides the 2-input AND function with open-drain output.

The output of the 74AHC1G09 is an open drain and can be connected to other open-drain

outputs to implement active-LOW, wired-OR or active-HIGH wired-AND functions. For

digital operation this device must have a pull-up resistor to establish a logic HIGH level.

2. Features

■ High noise immunity

■ ESD protection:

◆ HBM JESD22-A114-C exceeds 2000 V

◆ MM JESD22-A115-A exceeds 200 V

■ Low power dissipation

■ Speciﬁed from −40 °C to +85 °C and from −40 °C to +125 °C.

3. Quick reference data

Table 1:

Quick reference data

GND = 0 V; T_amb= 25 °C; t_r= t_f≤ 3.0 ns.

Symbol

Parameter

Conditions

Min Typ Max Unit

t_PZL, t_PLZ

propagation delay

A and B to Y

V_CC= 4.5 V to 5.5 V;

C_L= 15 pF

3.2

5.5

C_i

input capacitance

1.5

[1]

C_PD

power dissipation

capacitance

C_L= 50 pF; f_i= 1 MHz;

V_I= GND to V_CC

[1] C_PDis used to determine the dynamic power dissipation (P_Din µW).

P_D= C_PD× V_CC²× f_i× N + (C_L× V_CC²× f_o) where:

f_i= input frequency in MHz;

f_o= output frequency in MHz;

C_L= output load capacitance in pF;

V_CC= supply voltage in Volts;

N = number of inputs switching;

(C_L× V_CC²× f_o) = dissipation due to the output if the combination of the pull up voltage and resistance

results in V_CCat the output.

74AHC1G09

Philips Semiconductors

2-input AND gate with open-drain output

4. Ordering information

Table 2:

Ordering information

Type number

Package

Temperature range Name

Description

Version

74AHC1G09GW

−40 °C to +125 °C

TSSOP5

plastic thin shrink small outline package; 5 leads;

body width 1.25 mm

SOT353-1

5. Marking

Table 3:

Marking

Type number

74AHC1G09GW

Marking code

6. Functional diagram

001aad598

001aad599

Fig 1. Logic symbol

Fig 2. IEC logic symbol

GND

001aad600

Fig 3. Logic diagram

7. Pinning information

7.1 Pinning

GND

001aad601

Fig 4. Pin conﬁguration SOT353-1 (TSSOP5)

Rev. 01 — 26 September 2005

74AHC1G09_1

Product data sheet

2 of 11

74AHC1G09

Philips Semiconductors

2-input AND gate with open-drain output

7.2 Pin description

Table 4:

Pin description

Symbol

Description

data input B

data input A

ground (0 V)

data output Y

supply voltage

GND

V_CC

8. Functional description

8.1 Function table

Table 5:

Function table^[1]

Input

Output

[1] H = HIGH voltage level;

L = LOW voltage level;

Z = high-impedance OFF-state.

9. Limiting values

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to

GND (ground = 0 V).

Symbol Parameter

Conditions

Min

Max

+7.0

−20

±20

Unit

V_CC

V_I

supply voltage

input voltage

output voltage

−0.5

[1]

−0.5

V_O

active mode

−0.5

high-impedance mode

V_I< −0.5 V

−0.5

I_IK

input clamping current

°C

I_OK

I_O

output clamping current V_O< −0.5 V

output current

V_O> −0.5 V

I_CC

I_GND

T_stg

P_tot

quiescent supply current

GND current

±75

+150

250

storage temperature

total power dissipation

−65

[2]

T_amb= −40 °C to +125 °C

[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.

[2] For TSSOP5 packages: above 87.5 °C the value of P_totderates linearly with 4.0 mW/K.

74AHC1G09_1

Product data sheet

Rev. 01 — 26 September 2005

3 of 11

74AHC1G09

Philips Semiconductors

2-input AND gate with open-drain output

10. Recommended operating conditions

Table 7:

Symbol

V_CC

Recommended operating operations

Parameter

Conditions

Min

2.0

Typ

Max

5.5

Unit

supply voltage

input voltage

output voltage

5.0

V_I

5.5

V_O

active mode

V_CC

6.0

high-impedance mode

T_amb

t_r, t_f

ambient temperature

−40

+25

+125 °C

input rise and fall times V_CC= 3.0 V to 3.6 V

V_CC= 4.5 V to 5.5 V

100

ns/V

11. Static characteristics

Table 8:

Static characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

T_amb= 25 °C

V_IH

Parameter

Conditions

Min

Typ

Max

Unit

HIGH-level input

voltage

V_CC= 2.0 V

1.5

V_CC= 3.0 V

2.1

V_CC= 5.5 V

3.85

V_IL

LOW-level input

voltage

V_CC= 2.0 V

0.5

0.9

1.65

V_CC= 3.0 V

V_CC= 5.5 V

V_OL

LOW-level output

voltage

V_I= V_IHor V_IL

I_O= 50 µA; V_CC= 2.0 V

I_O= 50 µA; V_CC= 3.0 V

I_O= 50 µA; V_CC= 4.5 V

I_O= 4.0 mA; V_CC= 3.0 V

I_O= 8.0 mA; V_CC= 4.5 V

0.1

0.36

±0.1

±0.25

I_LI

input leakage current V_I= V_CCor GND; V_CC= 5.5 V

µA

I_OZ

OFF-state output

current

V_I= V_IHor V_IL; V_O= V_CCor GND;

_CC= 5.5 V

I_CC

C_i

quiescent supply

current

V_I= V_CCor GND; I_O= 0 A; V_CC= 5.5 V

1.0

µA

input capacitance

1.5

T_amb= −40 °C to +85 °C

V_IHHIGH-level input

V_CC= 2.0 V

V_CC= 3.0 V

V_CC= 5.5 V

V_CC= 2.0 V

V_CC= 3.0 V

V_CC= 5.5 V

1.5

voltage

2.1

3.85

V_IL

LOW-level input

voltage

0.5

0.9

1.65

74AHC1G09_1

Product data sheet

Rev. 01 — 26 September 2005

4 of 11

74AHC1G09

Philips Semiconductors

2-input AND gate with open-drain output

Table 8:

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_OL

LOW-level output

voltage

V_I= V_IHor V_IL

I_O= 50 µA; V_CC= 2.0 V

I_O= 50 µA; V_CC= 3.0 V

I_O= 50 µA; V_CC= 4.5 V

I_O= 4.0 mA; V_CC= 3.0 V

I_O= 8.0 mA; V_CC= 4.5 V

0.1

0.44

±1.0

±2.5

I_LI

input leakage current V_I= V_CCor GND; V_CC= 5.5 V

µA

I_OZ

OFF-state output

current

V_I= V_IHor V_IL; V_O= V_CCor GND;

_CC= 5.5 V

I_CC

quiescent supply

current

V_I= V_CCor GND; I_O= 0 A; V_CC= 5.5 V

µA

T_amb= −40 °C to +125 °C

V_IH

HIGH-level input

voltage

V_CC= 2.0 V

1.5

V_CC= 3.0 V

2.1

V_CC= 5.5 V

3.85

V_IL

LOW-level input

voltage

V_CC= 2.0 V

0.5

0.9

1.65

V_CC= 3.0 V

V_CC= 5.5 V

V_OL

LOW-level output

voltage

V_I= V_IHor V_IL

I_O= 50 µA; V_CC= 2.0 V

I_O= 50 µA; V_CC= 3.0 V

I_O= 50 µA; V_CC= 4.5 V

I_O= 4.0 mA; V_CC= 3.0 V

I_O= 8.0 mA; V_CC= 4.5 V

0.1

0.55

±2.0

±10

I_LI

input leakage current V_I= V_CCor GND; V_CC= 5.5 V

µA

I_OZ

OFF-state output

current

V_I= V_IHor V_IL; V_O= V_CCor GND;

_CC= 5.5 V

I_CC

quiescent supply

current

V_I= V_CCor GND; I_O= 0 A; V_CC= 5.5 V

µA

74AHC1G09_1

Product data sheet

Rev. 01 — 26 September 2005

5 of 11

74AHC1G09

Philips Semiconductors

2-input AND gate with open-drain output

12. Dynamic characteristics

Table 9:

Dynamic characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V); t_r= t_f≤ 3.0 ns; see Figure 6.

Symbol

T_amb= 25 °C

t_PZL, t_PLZ

Parameter

Conditions

Min

Typ

Max

Unit

propagation delay see Figure 5

A and B to Y

[1]

[2]

V_CC= 3.0 V to 3.6 V; C_L= 15 pF

4.6

3.2

6.5

4.6

7.5

5.5

11.0

7.5

V_CC= 4.5 V to 5.5 V; C_L= 15 pF

V_CC= 3.0 V to 3.6 V; C_L= 50 pF

V_CC= 4.5 V to 5.5 V; C_L= 50 pF

C_PD

power dissipation C_L= 50 pF; f_i= 1 MHz;

capacitance V_I= GND to V_CC

T_amb= −40 °C to +85 °C

t_PZL, t_PLZ

propagation delay see Figure 5

A and B to Y

V_CC= 3.0 V to 3.6 V; C_L= 15 pF

1.0

1.5

8.5

6.5

12.0

8.0

V_CC= 4.5 V to 5.5 V; C_L= 15 pF

V_CC= 3.0 V to 3.6 V; C_L= 50 pF

V_CC= 4.5 V to 5.5 V; C_L= 50 pF

T_amb= −40 °C to +125 °C

t_PZL, t_PLZ

propagation delay see Figure 5

A and B to Y

V_CC= 3.0 V to 3.6 V; C_L= 15 pF

V_CC= 4.5 V to 5.5 V; C_L= 15 pF

V_CC= 3.0 V to 3.6 V; C_L= 50 pF

V_CC= 4.5 V to 5.5 V; C_L= 50 pF

1.0

1.5

9.0

7.0

12.5

8.5

[1] All typical values are measured at nominal V_CC

[2] C_PDis used to determine the dynamic power dissipation (P_Din µW).

P_D= C_PD× V_CC²× f_i× N + (C_L× V_CC²× f_o) where:

f_i= input frequency in MHz;

f_o= output frequency in MHz;

C_L= output load capacitance in pF;

V_CC= supply voltage in Volts;

N = number of inputs switching;

(C_L× V_CC²× f_o) = dissipation due to the output if the combination of the pull up voltage and resistance results in V_CCat the output.

74AHC1G09_1

Product data sheet

Rev. 01 — 26 September 2005

6 of 11

74AHC1G09

Philips Semiconductors

2-input AND gate with open-drain output

13. Waveforms

A, B input

Y output

GND

PLZ

PZL

001aad602

V_M= 0.5V_CC; V_I= GND to V_CC

V_OLis the typical voltage output drop that occur with the output load.

Fig 5. The data input (A, B) to output (Y) propagation delays

open

GND

L =

1000 Ω

PULSE

GENERATOR

D.U.T.

mna232

Test data is given in Table 10.

Deﬁnitions for test circuit:

C_L= Load capacitance including jig and probe capacitance.

R_T= Termination resistance should be equal to output impedance Z_oof the pulse generator.

Fig 6. Load circuitry for switching times

Table 10: Test data

Input

Load

R_L

S₁

V_I

t_r, t_f

C_L

t_PHZ, t_PZH

GND

t_PLZ, t_PZL

V_CC

t_PLH, t_PHL

open

GND to V_CC

≤ 3.0 ns

1000 Ω

15 pF

50 pF

V_CC

open

74AHC1G09_1

Product data sheet

Rev. 01 — 26 September 2005

7 of 11

74AHC1G09

Philips Semiconductors

2-input AND gate with open-drain output

14. Package outline

TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm

SOT353-1

(A )

w M

detail X

1.5

3 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

max.

0.1

1.0

0.8

0.30

0.15

0.25

0.08

2.25

1.85

1.35

1.15

2.25

2.0

0.46

0.21

0.60

0.15

7°

0°

1.1

0.65

1.3

0.15

0.425

0.3

0.1

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

REFERENCES

OUTLINE

EUROPEAN

PROJECTION

ISSUE DATE

VERSION

IEC

JEDEC

JEITA

00-09-01

03-02-19

SOT353-1

MO-203

SC-88A

Fig 7. Package outline SOT353-1 (TSSOP5)

74AHC1G09_1

Product data sheet

Rev. 01 — 26 September 2005

8 of 11

74AHC1G09

Philips Semiconductors

2-input AND gate with open-drain output

15. Abbreviations

Table 11: Abbreviations

Acronym

CMOS

ESD

Description

Complementary Metal Oxide semiconductor

ElectroStatic Discharge

Human Body Model

HBM

Machine Model

16. Revision history

Table 12: Revision history

Document ID

Release date Data sheet status

20050926 Product data sheet

Change notice

Doc. number

Supersedes

74AHC1G09_1

Product data sheet

Rev. 01 — 26 September 2005

9 of 11

74AHC1G09

Philips Semiconductors

2-input AND gate with open-drain output

17. Data sheet status

Level Data sheet status^[1]Product status^{[2] [3]}

Deﬁnition

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

18. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

20. Trademarks

Notice — All referenced brands, product names, service names and

19. Disclaimers

trademarks are the property of their respective owners.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

21. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

74AHC1G09_1

Product data sheet

Rev. 01 — 26 September 2005

10 of 11

74AHC1G09

Philips Semiconductors

2-input AND gate with open-drain output

22. Contents

General description . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data . . . . . . . . . . . . . . . . . . . . . 1

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

7.1

7.2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

8.1

Functional description . . . . . . . . . . . . . . . . . . . 3

Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Recommended operating conditions. . . . . . . . 4

Static characteristics. . . . . . . . . . . . . . . . . . . . . 4

Dynamic characteristics . . . . . . . . . . . . . . . . . . 6

Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Contact information . . . . . . . . . . . . . . . . . . . . 10

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: 26 September 2005

Document number: 74AHC1G09_1

Published in The Netherlands

74AHC1G09GW [NXP]

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