74AHC3G14 [NXP]
Inverting Schmitt trigger; 施密特触发器
| 型号： | 74AHC3G14 |
| 厂家： | 
NXP |
| 描述： | Inverting Schmitt trigger |
| 文件： | 总21页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
74AHC3G14; 74AHCT3G14
Inverting Schmitt trigger
Product specification
2004 Oct 18
Supersedes data of 2003 Nov 27
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
FEATURES
APPLICATIONS
• Symmetrical output impedance
• High noise immunity
• Wave and pulse shapers
• Astable multivibrators
• ESD protection:
• Monostable multivibrators.
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 500 V.
• Low power dissipation
DESCRIPTION
The 74AHC3G/AHCT3G14 is a high-speed Si-gate CMOS
device.
• Balanced propagation delays
The 74AHC3G/AHCT3G14 provides three inverting
buffers with Schmitt-trigger action. These devices are
capable of transforming slowly changing input signals into
sharply defined, jitter-free output signals.
• Multiple package options
• Specified from −40 °C to +85 °C and −40 °C to +125 °C.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.
TYPICAL
SYMBOL
PARAMETER
CONDITIONS
CL = 15 pF; VCC = 5 V
UNIT
AHC3G14 AHCT3G14
tPHL/tPLH propagation delay A to Y
3.2
1.5
10
4.1
1.5
12
ns
pF
pF
CI
input capacitance
CPD
power dissipation capacitance CL = 15 pF; f = 1 MHz;
notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC
.
FUNCTION TABLE
See note 1.
INPUT
nA
OUTPUT
nY
L
H
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
2004 Oct 18
2
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
PACKAGE MATERIAL
TEMPERATURE
PINS
CODE
MARKING
RANGE
74AHC3G14DP
74AHCT3G14DP
74AHC3G14DC
74AHCT3G14DC
74AHC3G14GM
74AHCT3G14GM
−40 °C to +125 °C
−40 °C to +125 °C
−40 °C to +125 °C
−40 °C to +125 °C
−40 °C to +125 °C
−40 °C to +125 °C
8
8
8
8
8
8
TSSOP8
TSSOP8
VSSOP8
VSSOP8
XSON8
plastic
plastic
plastic
plastic
plastic
plastic
SOT505-2
SOT505-2
SOT765-1
SOT765-1
SOT833-1
SOT833-1
A14
C14
A14
C14
A14
C14
XSON8
PINNING
PIN
1
SYMBOL
DESCRIPTION
1A
data input
2
3Y
data output
data input
3
2A
4
GND
2Y
ground (0 V)
data output
data input
5
6
3A
7
1Y
data output
supply voltage
8
VCC
3G14
1A
3Y
1
2
3
4
8
7
6
5
V
CC
1
2
3
4
8
7
6
5
1A
3Y
V
CC
1Y
3A
2Y
3G14
1Y
3A
2Y
2A
GND
2A
001aab833
GND
001aab834
Transparent top view
Fig.1 Pin configuration TSSOP8 and VSSOP8.
Fig.2 Pin configuration XSON8.
2004 Oct 18
3
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
handbook, halfpage
1
6
3
7
2
5
handbook, halfpage
1
2
3
1A
3Y
2A
1Y
3A
2Y
7
6
5
MNA740
MNA741
Fig.3 Logic symbol.
Fig.4 IEC logic symbol.
handbook, halfpage
A
Y
MNA025
Fig.5 Logic diagram (one driver).
2004 Oct 18
4
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
RECOMMENDED OPERATING CONDITIONS
74AHC3G
74AHCT3G
SYMBOL
PARAMETER
supply voltage
CONDITIONS
UNIT
MIN. TYP. MAX. MIN. TYP. MAX.
VCC
VI
2.0
0
5.0
−
5.5
5.5
VCC
4.5
0
5.0
−
5.5
5.5
VCC
V
V
V
input voltage
VO
output voltage
0
−
0
−
Tamb
operating ambient temperature see DC and AC
−40
+25
+125 −40
+25
+125 °C
characteristics per
device
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
−0.5
MAX.
+7.0
UNIT
VCC
VI
V
input voltage
−0.5
−
+7.0
−20
±20
±25
±75
+150
250
V
IIK
input diode current
output diode current
output source or sink current
VI < −0.5 V
mA
mA
mA
mA
°C
IOK
IO
VO < −0.5 V or VO > VCC + 0.5 V; note 1
−0.5 V < VO < VCC + 0.5 V
−
−
ICC, IGND VCC or GND current
−
Tstg
PD
storage temperature
power dissipation
−65
−
Tamb = −40 °C to +125 °C
mW
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2004 Oct 18
5
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
DC CHARACTERISTICS
Type 74AHC3G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT
OTHER
VCC (V)
Tamb = 25 °C
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = −50 µA
IO = −50 µA
IO = −50 µA
2.0
3.0
4.5
3.0
4.5
1.9
2.0
3.0
4.5
−
−
−
−
−
−
V
V
V
V
V
2.9
4.4
IO = −4.0 mA
IO = −8.0 mA
VI = VIH or VIL
IO = 50 µA
2.58
3.94
−
VOL
LOW-level output
voltage
2.0
3.0
4.5
3.0
4.5
5.5
−
−
−
−
−
−
0
0
0
−
−
−
0.1
V
IO = 50 µA
0.1
V
IO = 50 µA
0.1
V
IO = 4.0 mA
IO = 8.0 mA
VI = VCC or GND
0.36
0.36
0.1
V
V
ILI
input leakage
current
µA
ICC
CI
quiescent supply
current
VI = VCC or GND; IO = 0 A
5.5
−
−
−
1.0
10
µA
input capacitance
−
1.5
pF
Tamb = −40 °C to +85 °C
VOH HIGH-level output
VI = VIH or VIL
IO = −50 µA
IO = −50 µA
IO = −50 µA
IO = −4.0 mA
IO = −8.0 mA
VI = VIH or VIL
IO = 50 µA
voltage
2.0
3.0
4.5
3.0
4.5
1.9
2.9
4.4
2.48
3.8
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
VOL
LOW-level output
voltage
2.0
3.0
4.5
3.0
4.5
5.5
−
−
−
−
−
−
−
−
−
−
−
−
0.1
V
IO = 50 µA
0.1
V
IO = 50 µA
0.1
V
IO = 4.0 mA
IO = 8.0 mA
VI = VCC or GND
0.44
0.44
1.0
V
V
ILI
input leakage
current
µA
ICC
CI
quiescent supply
current
VI = VCC or GND; IO = 0 A
5.5
−
−
−
−
10
10
µA
input capacitance
−
pF
2004 Oct 18
6
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
TEST CONDITIONS
OTHER
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT
VCC (V)
Tamb = −40 °C to +125 °C
VOH HIGH-level output
VI = VIH or VIL
IO = −50 µA
IO = −50 µA
IO = −50 µA
voltage
2.0
3.0
4.5
3.0
4.5
1.9
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
2.9
4.4
IO = −4.0 mA
IO = −8.0 mA
VI = VIH or VIL
IO = 50 µA
2.40
3.70
VOL
LOW-level output
voltage
2.0
3.0
4.5
3.0
4.5
5.5
−
−
−
−
−
−
−
−
−
−
−
−
0.1
V
IO = 50 µA
0.1
V
IO = 50 µA
0.1
V
IO = 4.0 mA
IO = 8.0 mA
VI = VCC or GND
0.55
0.55
2.0
V
V
ILI
input leakage
current
µA
ICC
CI
quiescent supply
current
VI = VCC or GND; IO = 0 A
5.5
−
−
−
−
40
10
µA
input capacitance
−
pF
2004 Oct 18
7
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
Type 74AHCT3G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP. MAX. UNIT
OTHER
VCC (V)
Tamb = 25 °C
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −50 µA
4.5
4.4
4.5
−
−
V
V
IO = −8.0 mA
4.5
3.94
−
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 50 µA
4.5
4.5
5.5
5.5
5.5
−
−
−
−
−
0
−
−
−
−
0.1
V
IO = 8.0 mA
0.36
0.1
V
ILI
input leakage current
VI = VIH or VIL
VI = VCC or GND; IO = 0 A
µA
µA
mA
ICC
∆ICC
quiescent supply current
1.0
additional quiescent supply VI = 3.4 V; other inputs at
1.35
current per input pin
VCC or GND; IO = 0 A
CI
input capacitance
−
−
1.5
10
pF
Tamb = −40 °C to +85 °C
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −50 µA
4.5
4.5
4.4
3.8
−
−
−
−
V
V
IO = −8.0 mA
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 50 µA
4.5
4.5
5.5
5.5
5.5
−
−
−
−
−
−
−
−
−
−
0.1
0.44
1.0
10
V
IO = 8.0 mA
V
ILI
input leakage current
VI = VIH or VIL
VI = VCC or GND; IO = 0 A
µA
µA
mA
ICC
∆ICC
quiescent supply current
additional quiescent supply VI = 3.4 V; other inputs at
1.5
current per input pin
VCC or GND; IO = 0 A
CI
input capacitance
−
−
−
10
pF
Tamb = −40 °C to +125 °C
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −50 µA
4.5
4.5
4.4
−
−
−
−
V
V
IO = −8.0 mA
3.70
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 50 µA
4.5
4.5
5.5
5.5
5.5
−
−
−
−
−
−
−
−
−
−
0.1
0.55
2.0
40
V
IO = 8.0 mA
V
ILI
input leakage current
VI = VIH or VIL
VI = VCC or GND; IO = 0 A
µA
µA
mA
ICC
∆ICC
quiescent supply current
additional quiescent supply VI = 3.4 V; other inputs at
1.5
current per input pin
VCC or GND; IO = 0 A
CI
input capacitance
−
−
−
10
pF
2004 Oct 18
8
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
TRANSFER CHARACTERISTICS
Type 74AHC3G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
positive-going threshold
negative-going threshold
hysteresis (VT+ − VT−)
MIN.
TYP.
MAX.
UNIT
WAVEFORMS
VCC (V)
Tamb = 25 °C
VT+
see Figs 6 and 7
3.0
−
−
−
−
−
−
−
−
−
−
−
−
2.2
V
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
3.15
3.85
−
V
V
V
V
V
V
V
V
VT−
see Figs 6 and 7
see Figs 6 and 7
0.9
1.35
1.65
0.3
−
−
VH
1.2
1.4
1.6
0.4
0.5
Tamb = −40 °C to +85 °C
VT+
VT−
VH
positive-going threshold
see Figs 6 and 7
see Figs 6 and 7
see Figs 6 and 7
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
−
−
−
−
−
−
−
−
−
−
2.2
3.15
3.85
−
V
V
V
V
V
V
V
V
V
−
−
negative-going threshold
0.9
1.35
1.65
0.3
0.4
0.5
−
−
hysteresis (VT+ − VT−)
1.2
1.4
1.6
Tamb = −40 °C to +125 °C
VT+
positive-going threshold
negative-going threshold
hysteresis (VT+ − VT−)
see Figs 6 and 7
see Figs 6 and 7
see Figs 6 and 7
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
−
−
−
−
−
−
−
−
−
−
2.2
3.15
3.85
−
V
V
V
V
V
V
V
V
V
−
−
VT−
0.9
1.35
1.65
0.25
0.35
0.45
−
−
VH
1.2
1.4
1.6
2004 Oct 18
9
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
Type 74AHCT3G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
WAVEFORMS
VCC (V)
Tamb = 25 °C
VT+
positive-going threshold
negative-going threshold
hysteresis (VT+ − VT−)
see Figs 6 and 7
see Figs 6 and 7
see Figs 6 and 7
4.5
−
−
−
−
−
−
−
−
2.0
V
5.5
4.5
5.5
4.5
5.5
2.0
−
V
V
V
V
V
VT−
VH
0.5
0.6
0.4
0.4
−
1.4
1.6
Tamb = −40 °C to +85 °C
VT+
VT−
VH
positive-going threshold
see Figs 6 and 7
see Figs 6 and 7
see Figs 6 and 7
4.5
5.5
4.5
5.5
4.5
5.5
−
−
−
−
−
−
−
2.0
2.0
−
V
V
V
V
V
V
−
negative-going threshold
0.5
0.6
0.4
0.4
−
hysteresis (VT+ − VT−)
1.4
1.6
Tamb = −40 °C to +125 °C
VT+
VT−
VH
positive-going threshold
see Figs 6 and 7
see Figs 6 and 7
see Figs 6 and 7
4.5
5.5
4.5
5.5
4.5
5.5
−
−
−
−
−
−
−
2.0
2.0
−
V
V
V
V
V
V
−
negative-going threshold
0.5
0.6
0.35
0.35
−
hysteresis (VT+ − VT−)
1.4
1.6
2004 Oct 18
10
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
TRANSFER CHARACTERISTIC WAVEFORMS
handbook, halfpage
V
O
handbook, halfpage
V
T+
V
I
V
H
V
T−
V
O
V
V
I
H
MNA027
V
V
T+
T−
MNA026
Fig.6 Transfer characteristic.
Fig.7 Definitions of VT+, VT− and VH.
MNA401
1.5
handbook, halfpage
I
CC
(mA)
1
0.5
0
0
1
2
3
V (V)
I
VCC = 3.0 V.
Fig.8 Typical AHC3G14 transfer characteristics.
2004 Oct 18
11
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
MNA402
MNA403
5
8
handbook, halfpage
handbook, halfpage
I
CC
(mA)
I
CC
(mA)
4
6
3
2
1
0
4
2
0
0
0
1
2
3
4
5
2
4
6
V (V)
V (V)
I
I
VCC = 4.5 V.
VCC = 5.5 V.
Fig.9 Typical AHC3G14 transfer characteristics.
Fig.10 Typical AHC3G14 transfer characteristics.
MNA405
MNA404
8
handbook, halfpage
5
handbook, halfpage
I
I
CC
(mA)
CC
(mA)
4
6
3
2
1
0
4
2
0
0
2
4
6
V (V)
0
1
2
3
4
5
I
V (V)
I
VCC = 4.5 V.
VCC = 5.5 V.
Fig.11 Typical AHCT3G14 transfer characteristics.
Fig.12 Typical AHCT3G14 transfer characteristics.
2004 Oct 18
12
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
AC CHARACTERISTICS
Type 74AHC3G14
GND = 0 V; tr = tf ≤ 3.0 ns.
TEST CONDITIONS
WAVEFORMS VCC (V)
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT
CL (pF)
Tamb = 25 °C
tPHL/tPLH
propagation delay nA to nY see Figs 13 and 14 3.3
15
50
−
−
−
−
−
−
−
−
4.2
6.0
−
−
−
ns
ns
3.0 to 3.6 15
12.8 ns
16.3 ns
50
15
50
−
5.0
3.2
4.6
−
−
ns
ns
ns
−
4.5 to 5.5 15
50
8.6
−
10.6 ns
Tamb = −40 °C to +85 °C
tPHL/tPLH
propagation delay nA to nY see Figs 13 and 14 3.0 to 3.6 15
1.0
1.0
1.0
1.0
−
−
−
−
15.0 ns
18.5 ns
10.0 ns
12.0 ns
50
4.5 to 5.5 15
50
Tamb = −40 °C to +125 °C
tPHL/tPLH
propagation delay nA to nY see Figs 13 and 14 3.0 to 3.6 15
1.0
1.0
1.0
1.0
−
−
−
−
16.5 ns
20.5 ns
11.0 ns
13.5 ns
50
4.5 to 5.5 15
50
2004 Oct 18
13
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
Type 74AHCT3G14
GND = 0 V; tr = tf ≤ 3.0 ns.
TEST CONDITIONS
WAVEFORMS VCC (V)
SYMBOL
PARAMETER
MIN. TYP. MAX. UNIT
CL (pF)
Tamb = 25 °C
tPHL/tPLH
propagation delay nA to nY see Figs 13 and 14
5
15
50
−
−
−
−
4.1
5.9
−
−
ns
ns
ns
ns
−
4.5 to 5.5 15
50
7.0
8.5
−
Tamb = −40 °C to +85 °C
tPHL/tPLH
propagation delay nA to nY see Figs 13 and 14 4.5 to 5.5 15
50
1.0
1.0
−
−
8.0
ns
10.0 ns
Tamb = −40 °C to +125 °C
tPHL/tPLH
propagation delay nA to nY see Figs 13 and 14 4.5 to 5.5 15
50
1.0
1.0
−
−
9.0
ns
11.0 ns
2004 Oct 18
14
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
AC WAVEFORMS
V
handbook, halfpage
I
V
nA input
M
GND
t
t
PHL
PLH
V
OH
V
nY output
M
V
MNA344
OL
VI INPUT
REQUIREMENTS
VM
INPUT
VM
OUTPUT
FAMILY
AHC3G GND to VCC
AHCT3G GND to 3.0 V
50 % VCC 50 % VCC
1.5 V 50 % VCC
Fig.13 The input (nA) to output (nY) propagation delays.
V
handbook, halfpage
CC
V
V
O
I
PULSE
GENERATOR
D.U.T.
C
R
L
T
MNA101
Definitions for test circuit:
CL = Load capacitance including jig and probe capacitance. (See Chapter “AC characteristics” for values).
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig.14 Load circuitry for switching times.
2004 Oct 18
15
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
APPLICATION INFORMATION
The slow input rise and fall times cause additional power
dissipation. This can be calculated using the following
formula:
MNA036
200
handbook, halfpage
I
CC(AV)
(µA)
Pad = fi × (tr × ICC(AV) + tf × ICC(AV)) × VCC
150
Where:
Pad = additional power dissipation (µW);
fi = input frequency (MHz);
positive-going
edge
100
50
tr = input rise time (ns); 10 % to 90 %;
tf = input fall time (ns); 90 % to 10 %;
ICC(AV) = average additional supply current (µA).
Average ICC differs with positive or negative input
transitions, as shown in Figs 15 and 16.
negative-going
edge
0
0
For AHC3G/AHCT3G14 used in relaxation oscillator
circuit, see Fig.17.
2.0
4.0
6.0
V
(V)
CC
Remark to the application information
Linear change of VI between 0.1VCC to 0.9VCC
.
All values given are typical unless otherwise specified.
Fig.15 Average ICC for AHC3G Schmitt-trigger
devices.
MNA058
200
handbook, halfpage
I
CC(AV)
(µA)
R
handbook, halfpage
150
positive-going
edge
C
100
MNA035
negative-going
50
edge
0
1
T
1
0
2
4
6
f =
≈
--- --------------------------
V
(V)
For AHC3G:
CC
0.55 × RC
1
T
1
For AHCT3G:
f =
≈
--- --------------------------
0.60 × RC
Linear change of VI between 0.1VCC to 0.9VCC
.
Fig.16 Average ICC for AHCT3G Schmitt-trigger
devices.
Fig.17 Relaxation oscillator using the
AHC3G/AHCT3G14.
2004 Oct 18
16
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
PACKAGE OUTLINES
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
SOT505-2
D
E
A
X
c
H
v
M
y
A
E
Z
5
8
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
A
A
A
b
c
D
E
e
H
E
L
L
p
UNIT
v
w
y
Z
θ
1
2
3
p
max.
0.15
0.00
0.95
0.75
0.38
0.22
0.18
0.08
3.1
2.9
3.1
2.9
4.1
3.9
0.47
0.33
0.70
0.35
8°
0°
mm
1.1
0.65
0.25
0.5
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-01-16
SOT505-2
- - -
2004 Oct 18
17
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
SOT765-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
A
1
(A )
3
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
A
A
A
b
c
D
E
e
H
L
L
p
Q
UNIT
v
w
y
Z
θ
1
2
3
p
E
max.
0.15
0.00
0.85
0.60
0.27
0.17
0.23
0.08
2.1
1.9
2.4
2.2
3.2
3.0
0.40
0.15
0.21
0.19
0.4
0.1
8°
0°
mm
1
0.5
0.12
0.4
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-06-07
SOT765-1
MO-187
2004 Oct 18
18
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 0.95 x 1.95 x 0.5 mm
SOT833-1
b
1
2
3
4
4×
(2)
L
L
1
e
8
7
6
5
e
1
e
1
e
1
8×
(2)
A
A
1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
1
UNIT
b
D
E
e
e
L
L
1
1
max max
0.25
0.17
2.0
1.9
1.0
0.9
0.35 0.40
0.27 0.32
mm
0.5 0.04
0.6
0.5
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
- - -
04-07-15
04-07-22
SOT833-1
- - -
MO-252
2004 Oct 18
19
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Oct 18
20
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R44/02/pp21
Date of release: 2004 Oct 18
Document order number: 9397 750 13741
相关型号：
74AHC3G14DP-G
Inverting Schmitt trigger - Description: Triple Inverter Schmitt-Trigger ; Logic switching levels: CMOS ; Number of pins: 8 ; Output drive capability: +/- 8 mA ; Power dissipation considerations: Low Power or Battery Applications ; Propagation delay: 3.2@5V ns; Voltage: 2.0-5,5 V
NXP
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