74AUP1G09GM,132 [NXP]

74AUP1G09 - Low-power 2-input AND gate with open-drain SON 6-Pin;
74AUP1G09GM,132
型号: 74AUP1G09GM,132
厂家: NXP    NXP
描述:

74AUP1G09 - Low-power 2-input AND gate with open-drain SON 6-Pin

栅 光电二极管 逻辑集成电路 触发器
文件: 总19页 (文件大小:335K)
中文:  中文翻译
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74AUP1G09  
Low-power 2-input AND gate with open-drain  
Rev. 4 — 28 June 2012  
Product data sheet  
1. General description  
The 74AUP1G09 provides the single 2-input AND gate with an open-drain output. The  
output of the device is an open-drain and can be connected to other open-drain outputs to  
implement active-LOW wired-OR or active-HIGH wired-AND functions.  
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall  
times across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial Power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
2. Features and benefits  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114F Class 3A exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
Low static power consumption; ICC = 0.9 μA (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
IOFF circuitry provides partial Power-down mode operation  
Multiple package options  
Specified from 40 °C to +85 °C and 40 °C to +125 °C  
 
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
3. Ordering information  
Table 1.  
Ordering information  
Type number  
Package  
Temperature range Name  
Description  
Version  
74AUP1G09GW  
74AUP1G09GM  
74AUP1G09GF  
74AUP1G09GN  
74AUP1G09GS  
74AUP1G09GX  
40 °C to +125 °C  
40 °C to +125 °C  
40 °C to +125 °C  
40 °C to +125 °C  
40 °C to +125 °C  
40 °C to +125 °C  
TSSOP5  
plastic thin shrink small outline package; 5 leads;  
body width 1.25 mm  
SOT353-1  
XSON6  
XSON6  
XSON6  
XSON6  
X2SON5  
plastic extremely thin small outline package; no leads; SOT886  
6 terminals; body 1 × 1.45 × 0.5 mm  
plastic extremely thin small outline package; no leads; SOT891  
6 terminals; body 1 × 1 × 0.5 mm  
extremely thin small outline package; no leads;  
6 terminals; body 0.9 × 1.0 × 0.35 mm  
SOT1115  
SOT1202  
SOT1226  
extremely thin small outline package; no leads;  
6 terminals; body 1.0 × 1.0 × 0.35 mm  
X2SON5: plastic thermal enhanced extremely thin  
small outline package; no leads; 5 terminals;  
body 0.8 × 0.8 × 0.35 mm  
4. Marking  
Table 2.  
Marking  
Type number  
Marking code[1]  
74AUP1G09GW  
74AUP1G09GM  
74AUP1G09GF  
74AUP1G09GN  
74AUP1G09GS  
74AUP1G09GX  
p9  
p9  
p9  
p9  
p9  
p9  
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.  
5. Functional diagram  
Y
A
1
B
A
4
1
2
Y
&
2
4
GND  
B
001aad598  
001aad599  
001aad600  
Fig 1. Logic symbol  
Fig 2. IEC logic symbol  
Fig 3. Logic diagram  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
2 of 19  
 
 
 
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
6. Pinning information  
6.1 Pinning  
74AUP1G09  
74AUP1G09  
B
A
1
2
3
6
5
4
V
CC  
1
2
3
5
4
B
A
V
Y
CC  
n.c.  
Y
GND  
GND  
001aai729  
Transparent top view  
001aai728  
Fig 4. Pin configuration SOT353-1  
Fig 5. Pin configuration SOT886  
74AUP1G09  
74AUP1G09  
B
A
1
2
5
4
V
Y
CC  
B
A
1
2
3
6
5
4
V
CC  
3
GND  
n.c.  
Y
GND  
001aai730  
aaa-003001  
Transparent top view  
Transparent top view  
Fig 6. Pin configuration SOT891, SOT1115 and  
SOT1202  
Fig 7. Pin configuration SOT1226 (X2SON5)  
6.2 Pin description  
Table 3.  
Symbol  
Pin description  
Pin  
Description  
TSSOP5 and X2SON5 XSON6  
B
1
2
3
4
-
1
2
3
4
5
6
data input  
A
data input  
GND  
Y
ground (0 V)  
data output  
not connected  
supply voltage  
n.c.  
VCC  
5
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
3 of 19  
 
 
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
7. Functional description  
Table 4.  
Function table[1]  
Input  
Output  
A
L
B
L
Y
L
L
L
Z
L
H
L
H
H
H
[1] H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF state.  
8. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).  
Symbol  
VCC  
IIK  
Parameter  
Conditions  
Min  
0.5  
50  
0.5  
50  
0.5  
-
Max  
+4.6  
-
Unit  
V
supply voltage  
input clamping current  
input voltage  
VI < 0 V  
mA  
V
[1]  
[1]  
VI  
+4.6  
-
IOK  
output clamping current  
output voltage  
VO < 0 V  
mA  
V
VO  
Active mode and Power-down mode  
VO = 0 V to VCC  
+4.6  
+20  
+50  
-
IO  
output current  
mA  
mA  
mA  
°C  
ICC  
supply current  
-
IGND  
Tstg  
Ptot  
ground current  
50  
65  
-
storage temperature  
total power dissipation  
+150  
250  
[2]  
Tamb = 40 °C to +125 °C  
mW  
[1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
[2] For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.  
For XSON6 and X2SON5 packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.  
9. Recommended operating conditions  
Table 6.  
Symbol  
VCC  
Recommended operating conditions  
Parameter  
Conditions  
Min  
0.8  
0
Max  
3.6  
Unit  
V
supply voltage  
input voltage  
VI  
3.6  
V
VO  
output voltage  
ambient temperature  
Active mode and Power-down mode  
0
3.6  
V
Tamb  
Δt/ΔV  
40  
0
+125  
200  
°C  
ns/V  
input transition rise and fall rate VCC = 0.8 V to 3.6 V  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
4 of 19  
 
 
 
 
 
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
10. Static characteristics  
Table 7.  
Static characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Tamb = 25 °C  
VIH  
HIGH-level input voltage  
VCC = 0.8 V  
0.7VCC  
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
0.65VCC  
-
1.6  
-
VCC = 3.0 V to 3.6 V  
2.0  
-
VIL  
LOW-level input voltage  
LOW-level output voltage  
VCC = 0.8 V  
-
-
-
-
0.3VCC  
0.35VCC  
0.7  
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
0.9  
VOL  
VI = VIH or VIL  
IO = 20 μA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
IO = 1.7 mA; VCC = 1.4 V  
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
IO = 3.1 mA; VCC = 2.3 V  
IO = 2.7 mA; VCC = 3.0 V  
IO = 4.0 mA; VCC = 3.0 V  
VI = GND to 3.6 V; VCC = 0 V to 3.6 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1  
V
0.3VCC  
0.31  
0.31  
0.31  
0.44  
0.31  
0.44  
0.1  
V
V
V
V
V
V
V
II  
input leakage current  
μA  
μA  
IOZ  
OFF-state output current  
VI = VIH or VIL; VO = 0 V to 3.6 V;  
VCC = 3.6 V  
0.1  
IOFF  
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V  
-
-
-
-
0.2  
0.2  
μA  
μA  
ΔIOFF  
additional power-off  
leakage current  
VI or VO = 0 V to 3.6 V;  
VCC = 0 V to 0.2 V  
ICC  
supply current  
VI = GND or VCC; IO = 0 A;  
VCC = 0.8 V to 3.6 V  
-
-
0.5  
μA  
ΔICC  
CI  
additional supply current  
input capacitance  
VI = VCC 0.6 V; IO = 0 A; VCC = 3.3 V  
VCC = 0 V to 3.6 V; VI = GND or VCC  
output enabled; VO = GND; VCC = 0 V  
output disabled; VO = GND; VCC = 0 V  
-
-
-
-
-
40  
-
μA  
pF  
pF  
pF  
0.8  
1.7  
1.1  
CO  
output capacitance  
-
-
Tamb = 40 °C to +85 °C  
VIH HIGH-level input voltage  
VCC = 0.8 V  
0.7VCC  
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
VCC = 0.8 V  
0.65VCC  
-
1.6  
-
2.0  
-
VIL  
LOW-level input voltage  
-
-
-
-
0.3VCC  
0.35VCC  
0.7  
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
0.9  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
5 of 19  
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
Table 7.  
Static characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VOL  
LOW-level output voltage  
VI = VIH or VIL  
IO = 20 μA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
IO = 1.7 mA; VCC = 1.4 V  
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
IO = 3.1 mA; VCC = 2.3 V  
IO = 2.7 mA; VCC = 3.0 V  
IO = 4.0 mA; VCC = 3.0 V  
VI = GND to 3.6 V; VCC = 0 V to 3.6 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1  
V
0.3VCC  
0.37  
0.35  
0.33  
0.45  
0.33  
0.45  
0.5  
V
V
V
V
V
V
V
II  
input leakage current  
μA  
μA  
IOZ  
OFF-state output current  
VI = VIH or VIL; VO = 0 V to 3.6 V;  
VCC = 3.6 V  
0.5  
IOFF  
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V  
-
-
-
-
0.5  
0.6  
μA  
μA  
ΔIOFF  
additional power-off  
leakage current  
VI or VO = 0 V to 3.6 V;  
VCC = 0 V to 0.2 V  
ICC  
supply current  
VI = GND or VCC; IO = 0 A;  
VCC = 0.8 V to 3.6 V  
-
-
-
-
0.9  
50  
μA  
μA  
ΔICC  
additional supply current  
VI = VCC 0.6 V; IO = 0 A; VCC = 3.3 V  
Tamb = 40 °C to +125 °C  
VIH HIGH-level input voltage  
VCC = 0.8 V  
0.75VCC  
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
0.7VCC  
-
1.6  
-
VCC = 3.0 V to 3.6 V  
2.0  
-
VIL  
LOW-level input voltage  
LOW-level output voltage  
VCC = 0.8 V  
-
-
-
-
0.25VCC  
0.3VCC  
0.7  
VCC = 0.9 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
0.9  
VOL  
VI = VIH or VIL  
IO = 20 μA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
IO = 1.7 mA; VCC = 1.4 V  
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
IO = 3.1 mA; VCC = 2.3 V  
IO = 2.7 mA; VCC = 3.0 V  
IO = 4.0 mA; VCC = 3.0 V  
VI = GND to 3.6 V; VCC = 0 V to 3.6 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.11  
V
0.33VCC  
0.41  
0.39  
0.36  
0.50  
0.36  
0.50  
0.75  
0.75  
V
V
V
V
V
V
V
II  
input leakage current  
μA  
μA  
IOZ  
OFF-state output current  
VI = VIH or VIL; VO = 0 V to 3.6 V;  
VCC = 3.6 V  
IOFF  
power-off leakage current VI or VO = 0 V to 3.6 V; VCC = 0 V  
-
-
0.75  
μA  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
6 of 19  
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
Table 7.  
Static characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
ΔIOFF additional power-off  
Conditions  
Min  
Typ  
Max  
0.75  
Unit  
VI or VO = 0 V to 3.6 V;  
VCC = 0 V to 0.2 V  
-
-
μA  
leakage current  
ICC  
supply current  
VI = GND or VCC; IO = 0 A;  
-
-
-
-
1.4  
75  
μA  
μA  
VCC = 0.8 V to 3.6 V  
ΔICC  
additional supply current  
VI = VCC 0.6 V; IO = 0 A; VCC = 3.3 V  
11. Dynamic characteristics  
Table 8.  
Dynamic characteristics  
Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 9  
Symbol Parameter  
Conditions  
25 °C  
40 °C to +125 °C  
Unit  
Min  
Typ[1]  
Max  
Min  
Max  
Max  
(85 °C) (125 °C)  
CL = 5 pF  
[2]  
[2]  
[2]  
tpd  
propagation delay A or B to Y; see Figure 8  
VCC = 0.8 V  
-
13.5  
4.6  
3.3  
2.9  
2.2  
2.3  
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
1.9  
1.5  
1.2  
1.0  
0.9  
10.4  
6.5  
5.1  
3.8  
4.0  
1.8  
1.4  
1.1  
0.9  
0.8  
11.4  
7.4  
5.9  
4.5  
4.5  
12.6  
8.2  
6.5  
4.9  
4.9  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
CL = 10 pF  
tpd  
propagation delay A or B to Y; see Figure 8  
VCC = 0.8 V  
-
16.3  
5.6  
4.1  
3.8  
2.9  
3.2  
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
2.3  
1.8  
1.6  
1.4  
1.3  
12.3  
7.6  
6.1  
4.6  
5.7  
2.1  
1.7  
1.4  
1.2  
1.1  
13.7  
8.8  
7.1  
5.4  
6.4  
15.1  
9.7  
7.8  
5.9  
7.0  
CL = 15 pF  
tpd  
propagation delay A or B to Y; see Figure 8  
VCC = 0.8 V  
-
19.0  
6.6  
4.8  
4.6  
3.6  
4.1  
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
2.6  
2.1  
1.9  
1.6  
1.6  
14.2  
8.7  
7.6  
5.6  
7.5  
2.4  
1.9  
1.7  
1.5  
1.4  
15.8  
10.1  
8.5  
17.4  
11.1  
9.3  
6.9  
9.1  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
6.3  
VCC = 3.0 V to 3.6 V  
8.3  
CL = 30 pF  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
7 of 19  
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
Table 8.  
Dynamic characteristics …continued  
Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 9  
Symbol Parameter  
Conditions  
25 °C  
40 °C to +125 °C  
Unit  
Min  
Typ[1]  
Max  
Min  
Max  
Max  
(85 °C) (125 °C)  
[2]  
tpd  
propagation delay A or B to Y; see Figure 8  
VCC = 0.8 V  
-
27.0  
9.5  
7.0  
7.0  
5.4  
6.5  
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
3.6  
2.9  
2.6  
2.4  
2.3  
19.5  
11.5  
12.1  
8.9  
3.2  
2.6  
2.3  
2.1  
2.1  
21.8  
13.6  
13.3  
9.9  
24.0  
15.0  
14.6  
10.9  
15.3  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
12.7  
13.9  
CL = 5 pF, 10 pF, 15 pF and 30 pF  
CPD power dissipation fi = 1 MHz;  
capacitance VI = GND to VCC  
[3]  
VCC = 0.8 V  
-
-
-
-
-
-
0.6  
0.7  
0.8  
0.9  
1.1  
1.4  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF  
pF  
pF  
pF  
pF  
pF  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
[1] All typical values are measured at nominal VCC  
[2] pd is the same as tPZL and tPLZ  
.
t
.
[3] CPD is used to determine the dynamic power dissipation (PD in μW).  
PD = CPD × VCC2 × fi × N where:  
fi = input frequency in MHz;  
VCC = supply voltage in V;  
N = number of inputs switching.  
12. Waveforms  
V
I
A, B input  
Y output  
V
M
t
GND  
t
PLZ  
PZL  
V
CC  
V
M
V
X
V
OL  
001aai731  
Measurement points are given in Table 9.  
VOL is a typical output voltage level that occurs with the output load.  
Fig 8. The data input (A or B) to output (Y) propagation delays  
74AUP1G09  
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Product data sheet  
Rev. 4 — 28 June 2012  
8 of 19  
 
 
 
 
74AUP1G09  
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Low-power 2-input AND gate with open-drain  
Table 9.  
Measurement points  
Supply voltage  
VCC  
Input  
VM  
Output  
VM  
VX  
0.8 V to 1.6 V  
1.65 V to 2.7 V  
3.0 V to 3.6 V  
0.5VCC  
0.5VCC  
0.5VCC  
0.5VCC  
0.5VCC  
0.5VCC  
VOL + 0.1 V  
VOL + 0.15 V  
VOL + 0.3 V  
V
CC  
V
EXT  
5 kΩ  
V
V
O
I
G
DUT  
R
T
C
L
R
L
001aac521  
Test data is given in Table 10.  
Definitions for test circuit:  
RL = Load resistance.  
CL = Load capacitance including jig and probe capacitance.  
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.  
VEXT = External voltage for measuring switching times.  
Fig 9. Test circuit for measuring switching times  
Table 10. Test data  
Supply voltage  
VCC  
Load  
VEXT  
[1]  
CL  
RL  
tPLH, tPHL  
tPZH, tPHZ  
tPZL, tPLZ  
0.8 V to 3.6 V  
5 pF, 10 pF, 15 pF and 30 pF  
5 kΩ or 1 MΩ open  
GND  
2VCC  
[1] For measuring enable and disable times RL = 5 kΩ.  
For measuring propagation delays, set-up and hold times, and pulse width, RL = 1 MΩ.  
74AUP1G09  
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Product data sheet  
Rev. 4 — 28 June 2012  
9 of 19  
 
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
13. Package outline  
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm  
SOT353-1  
D
E
A
X
c
y
H
v
M
A
E
Z
5
4
A
2
A
(A )  
3
A
1
θ
L
L
p
1
3
e
w M  
b
p
detail X  
e
1
0
1.5  
3 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(1)  
(1)  
A
A
A
b
c
D
E
e
e
1
H
L
L
p
UNIT  
v
w
y
Z
θ
1
2
3
p
E
max.  
0.1  
0
1.0  
0.8  
0.30  
0.15  
0.25  
0.08  
2.25  
1.85  
1.35  
1.15  
2.25  
2.0  
0.46  
0.21  
0.60  
0.15  
7°  
0°  
mm  
1.1  
0.65  
1.3  
0.15  
0.425  
0.3  
0.1  
0.1  
Note  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
00-09-01  
03-02-19  
SOT353-1  
MO-203  
SC-88A  
Fig 10. Package outline SOT353-1 (TSSOP5)  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
10 of 19  
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm  
SOT886  
b
1
2
3
4x  
(2)  
L
L
1
e
6
5
4
e
1
e
1
6x  
(2)  
A
A
1
D
E
terminal 1  
index area  
0
1
2 mm  
scale  
Dimensions (mm are the original dimensions)  
(1)  
Unit  
A
A
1
b
D
E
e
e
L
L
1
1
max 0.5 0.04 0.25 1.50 1.05  
0.35 0.40  
0.20 1.45 1.00 0.6 0.5 0.30 0.35  
0.17 1.40 0.95 0.27 0.32  
mm nom  
min  
Notes  
1. Including plating thickness.  
2. Can be visible in some manufacturing processes.  
sot886_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
MO-252  
JEITA  
04-07-22  
12-01-05  
SOT886  
Fig 11. Package outline SOT886 (XSON6)  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
11 of 19  
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm  
SOT891  
b
1
2
3
4×  
(1)  
L
L
1
e
6
5
4
e
1
e
1
6×  
A
(1)  
A
1
D
E
terminal 1  
index area  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
A
1
UNIT  
b
D
E
e
e
L
L
1
1
max max  
0.20 1.05 1.05  
0.12 0.95 0.95  
0.35 0.40  
0.27 0.32  
mm  
0.5 0.04  
0.55 0.35  
Note  
1. Can be visible in some manufacturing processes.  
REFERENCES  
JEDEC JEITA  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
05-04-06  
07-05-15  
SOT891  
Fig 12. Package outline SOT891 (XSON6)  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
12 of 19  
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
XSON6: extremely thin small outline package; no leads;  
6 terminals; body 0.9 x 1.0 x 0.35 mm  
SOT1115  
b
3
(2)  
(4×)  
1
2
L
L
1
e
6
5
4
e
1
e
1
(2)  
(6×)  
A
1
A
D
E
terminal 1  
index area  
0
L
0.5  
scale  
1 mm  
Dimensions  
Unit  
(1)  
A
A
b
D
E
e
e
1
L
1
1
max 0.35 0.04 0.20 0.95 1.05  
0.35 0.40  
0.15 0.90 1.00 0.55 0.3 0.30 0.35  
0.12 0.85 0.95 0.27 0.32  
mm nom  
min  
Note  
1. Including plating thickness.  
2. Visible depending upon used manufacturing technology.  
sot1115_po  
References  
Outline  
version  
European  
Issue date  
projection  
IEC  
JEDEC  
JEITA  
10-04-02  
10-04-07  
SOT1115  
Fig 13. Package outline SOT1115 (XSON6)  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
13 of 19  
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
XSON6: extremely thin small outline package; no leads;  
6 terminals; body 1.0 x 1.0 x 0.35 mm  
SOT1202  
b
3
(2)  
1
2
(4×)  
L
L
1
e
6
5
4
e
1
e
1
(2)  
(6×)  
A
1
A
D
E
terminal 1  
index area  
0
L
0.5  
1 mm  
scale  
Dimensions  
Unit  
(1)  
A
A
b
D
E
e
e
1
L
1
1
max 0.35 0.04 0.20 1.05 1.05  
0.35 0.40  
0.15 1.00 1.00 0.55 0.35 0.30 0.35  
0.12 0.95 0.95 0.27 0.32  
mm nom  
min  
Note  
1. Including plating thickness.  
2. Visible depending upon used manufacturing technology.  
sot1202_po  
References  
Outline  
version  
European  
Issue date  
projection  
IEC  
JEDEC  
JEITA  
10-04-02  
10-04-06  
SOT1202  
Fig 14. Package outline SOT1202 (XSON6)  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
14 of 19  
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
X2SON5: plastic thermal enhanced extremely thin small outline package; no leads;  
5 terminals; body 0.8 x 0.8 x 0.35 mm  
SOT1226  
D
A
B
X
A
E
A
1
A
3
detail X  
terminal 1  
index area  
e
C
v
C
C
A
B
b
y
y
C
1
w
1
2
terminal 1  
index area  
3
L
5
4
0
1 mm  
scale  
v
Dimensions  
Unit  
max 0.35 0.04 0.128 0.85 0.30 0.85 0.27  
(1)  
A
A
1
A
3
D
D
E
b
e
k
L
w
y
y
1
h
0.27  
0.22 0.1 0.05 0.05 0.05  
0.20 0.17  
mm nom  
min  
0.80 0.25 0.80 0.22 0.48  
0.040 0.75 0.20 0.75 0.17  
Note  
1. Dimension A is including plating thickness.  
2. Plastic or metal protrusions of 0.075 mm maximum per side are not included.  
sot1226_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
EIAJ  
12-04-10  
12-04-25  
SOT1226  
Fig 15. Package outline SOT1226 (X2SON5)  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
15 of 19  
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
14. Abbreviations  
Table 11. Abbreviations  
Acronym  
CDM  
DUT  
Description  
Charged Device Model  
Device Under Test  
ElectroStatic Discharge  
Human Body Model  
Machine Model  
ESD  
HBM  
MM  
15. Revision history  
Table 12. Revision history  
Document ID  
74AUP1G09 v.4  
Modifications:  
Release date  
20120628  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
74AUP1G09 v.3  
Added type number 74AUP1G09GX (SOT1226)  
Package outline drawing of SOT886 (Figure 11) modified.  
74AUP1G09 v.3  
Modifications:  
20111128  
Product data sheet  
-
74AUP1G09 v.2  
Legal pages updated.  
74AUP1G09 v.2  
74AUP1G09 v.1  
20100709  
20090115  
Product data sheet  
Product data sheet  
-
-
74AUP1G09 v.1  
-
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
16 of 19  
 
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
16. Legal information  
16.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
16.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
16.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
17 of 19  
 
 
 
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
16.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
17. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
74AUP1G09  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2012. All rights reserved.  
Product data sheet  
Rev. 4 — 28 June 2012  
18 of 19  
 
 
74AUP1G09  
NXP Semiconductors  
Low-power 2-input AND gate with open-drain  
18. Contents  
1
2
3
4
5
General description . . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2  
6
6.1  
6.2  
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3  
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
Functional description . . . . . . . . . . . . . . . . . . . 4  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Recommended operating conditions. . . . . . . . 4  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7  
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16  
8
9
10  
11  
12  
13  
14  
15  
16  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
16.1  
16.2  
16.3  
16.4  
17  
18  
Contact information. . . . . . . . . . . . . . . . . . . . . 18  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2012.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 28 June 2012  
Document identifier: 74AUP1G09  
 

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SMBus Multi-Output Power-Supply Controller

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VISHAY

SI9135_11

SMBus Multi-Output Power-Supply Controller

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VISHAY

SI9136_11

Multi-Output Power-Supply Controller

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VISHAY

SI9130CG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9130LG-T1-E3

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9130_11

Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9137

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137DB

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137LG

Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9122E

500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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VISHAY