74AUP1G14GF,132 [NXP]

74AUP1G14 - Low-power Schmitt trigger inverter SON 6-Pin;
74AUP1G14GF,132
型号: 74AUP1G14GF,132
厂家: NXP    NXP
描述:

74AUP1G14 - Low-power Schmitt trigger inverter SON 6-Pin

栅 光电二极管 逻辑集成电路 触发器
文件: 总19页 (文件大小:93K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
74AUP1G14  
Low-power Schmitt trigger inverter  
Rev. 03 — 8 July 2009  
Product data sheet  
1. General description  
The 74AUP1G14 provides a single inverting Schmitt trigger which accepts standard input  
signals. It is capable of transforming slowly changing input signals into sharply defined,  
jitter-free output signals.  
This device ensures a very low static and dynamic power consumption across the entire  
VCC range from 0.8 V to 3.6 V.  
This device is fully specified for partial Power-down applications using IOFF  
.
The IOFF circuitry disables the output, preventing the damaging backflow current through  
the device when it is powered down.  
The inputs switch at different points for positive and negative-going signals. The difference  
between the positive voltage VT+ and the negative voltage VTis defined as the input  
hysteresis voltage VH.  
2. Features  
I Wide supply voltage range from 0.8 V to 3.6 V  
I High noise immunity  
I ESD protection:  
N HBM JESD22-A114E Class 3A exceeds 5000 V  
N MM JESD22-A115-A exceeds 200 V  
N CDM JESD22-C101C exceeds 1000 V  
I Low static power consumption; ICC = 0.9 µA (maximum)  
I Latch-up performance exceeds 100 mA per JESD 78 Class II  
I Inputs accept voltages up to 3.6 V  
I Low noise overshoot and undershoot < 10 % of VCC  
I IOFF circuitry provides partial Power-down mode operation  
I Multiple package options  
I Specified from 40 °C to +85 °C and 40 °C to +125 °C  
3. Applications  
I Wave and pulse shaper  
I Astable multivibrator  
I Monostable multivibrator  
 
 
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
4. Ordering information  
Table 1.  
Ordering information  
Type number  
Package  
Temperature range Name  
Description  
Version  
74AUP1G14GW  
74AUP1G14GM  
74AUP1G14GF  
40 °C to +125 °C  
40 °C to +125 °C  
40 °C to +125 °C  
TSSOP5  
plastic thin shrink small outline package; 5 leads;  
body width 1.25 mm  
SOT353-1  
XSON6  
XSON6  
plastic extremely thin small outline package; no leads; SOT886  
6 terminals; body 1 × 1.45 × 0.5 mm  
plastic extremely thin small outline package; no leads; SOT891  
6 terminals; body 1 × 1 × 0.5 mm  
5. Marking  
Table 2.  
Marking  
Type number  
Marking code[1]  
74AUP1G14GW  
74AUP1G14GM  
74AUP1G14GF  
pF  
pF  
pF  
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.  
6. Functional diagram  
A
Y
4
2
A
Y
2
4
mna025  
mna023  
mna024  
Fig 1. Logic symbol  
Fig 2. IEC logic symbol  
Fig 3. Logic diagram  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
2 of 19  
 
 
 
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
7. Pinning information  
7.1 Pinning  
74AUP1G14  
74AUP1G14  
n.c.  
A
1
2
3
6
5
4
V
CC  
74AUP1G14  
1
2
3
5
4
n.c.  
A
V
Y
n.c.  
A
1
2
3
6
5
4
V
CC  
CC  
n.c.  
Y
n.c.  
Y
GND  
GND  
GND  
001aaf122  
001aaf123  
Transparent top view  
Transparent top view  
001aaf121  
Fig 4. Pin configuration SOT353-1  
(TSSOP5)  
Fig 5. Pin configuration SOT886  
(XSON6)  
Fig 6. Pin configuration SOT891  
(XSON6)  
7.2 Pin description  
Table 3.  
Symbol  
Pin description  
Pin  
Description  
TSSOP5  
XSON6  
n.c.  
A
1
2
3
4
-
1
2
3
4
5
6
not connected  
data input  
GND  
Y
ground (0 V)  
data output  
n.c.  
VCC  
not connected  
supply voltage  
5
8. Functional description  
Table 4.  
Function table[1]  
Input  
Output  
A
L
Y
H
L
H
[1] H = HIGH voltage level;  
L = LOW voltage level.  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
3 of 19  
 
 
 
 
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
9. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).  
Symbol  
VCC  
IIK  
Parameter  
Conditions  
Min  
0.5  
50  
0.5  
50  
0.5  
-
Max  
+4.6  
-
Unit  
V
supply voltage  
input clamping current  
input voltage  
VI < 0 V  
mA  
V
[1]  
[1]  
VI  
+4.6  
-
IOK  
output clamping current  
output voltage  
VO < 0 V  
mA  
V
VO  
Active mode and Power-down mode  
VO = 0 V to VCC  
+4.6  
±20  
+50  
-
IO  
output current  
mA  
mA  
mA  
°C  
ICC  
supply current  
-
IGND  
Tstg  
Ptot  
ground current  
50  
65  
-
storage temperature  
total power dissipation  
+150  
250  
[2]  
Tamb = 40 °C to +125 °C  
mW  
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.  
[2] For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.  
For XSON6 packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.  
10. Recommended operating conditions  
Table 6.  
Symbol  
VCC  
Recommended operating conditions  
Parameter  
Conditions  
Min  
0.8  
0
Max  
3.6  
Unit  
supply voltage  
V
VI  
input voltage  
3.6  
V
VO  
output voltage  
Active mode  
0
VCC  
3.6  
V
Power-down mode; VCC = 0 V  
0
V
Tamb  
ambient temperature  
40  
+125  
°C  
11. Static characteristics  
Table 7.  
Static characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Tamb = 25 °C  
VOH  
HIGH-level output voltage  
VI = VT+ or VT  
IO = 20 µA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
IO = 1.7 mA; VCC = 1.4 V  
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
IO = 3.1 mA; VCC = 2.3 V  
IO = 2.7 mA; VCC = 3.0 V  
IO = 4.0 mA; VCC = 3.0 V  
V
CC 0.1  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.75 × VCC  
1.11  
1.32  
2.05  
1.9  
2.72  
2.6  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
4 of 19  
 
 
 
 
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
Table 7.  
Static characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VOL  
LOW-level output voltage  
VI = VT+ or VT−  
IO = 20 µA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
IO = 1.7 mA; VCC = 1.4 V  
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
IO = 3.1 mA; VCC = 2.3 V  
IO = 2.7 mA; VCC = 3.0 V  
IO = 4.0 mA; VCC = 3.0 V  
VI = GND to 3.6 V; VCC = 0 V to 3.6 V  
VI or VO = 0 V to 3.6 V; VCC = 0 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1  
V
0.3 × VCC  
0.31  
0.31  
0.31  
0.44  
0.31  
0.44  
±0.1  
±0.2  
±0.2  
V
V
V
V
V
V
V
II  
input leakage current  
µA  
µA  
µA  
IOFF  
IOFF  
power-off leakage current  
additional power-off leakage VI or VO = 0 V to 3.6 V;  
current  
V
CC = 0 V to 0.2 V  
VI = GND or VCC; IO = 0 A;  
CC = 0.8 V to 3.6 V  
VI = VCC 0.6 V; IO = 0 A;  
CC = 3.3 V  
ICC  
supply current  
-
-
-
-
0.5  
40  
µA  
µA  
V
ICC  
additional supply current  
V
CI  
input capacitance  
output capacitance  
VI = GND or VCC; VCC = 0 V to 3.6 V  
VO = GND; VCC = 0 V  
-
-
1.1  
1.7  
-
-
pF  
pF  
CO  
Tamb = 40 °C to +85 °C  
VOH HIGH-level output voltage  
VI = VT+ or VT−  
IO = 20 µA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
IO = 1.7 mA; VCC = 1.4 V  
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
IO = 3.1 mA; VCC = 2.3 V  
IO = 2.7 mA; VCC = 3.0 V  
IO = 4.0 mA; VCC = 3.0 V  
VI = VT+ or VT−  
V
CC 0.1  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.7 × VCC  
1.03  
1.30  
1.97  
1.85  
2.67  
2.55  
VOL  
LOW-level output voltage  
IO = 20 µA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
IO = 1.7 mA; VCC = 1.4 V  
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
IO = 3.1 mA; VCC = 2.3 V  
IO = 2.7 mA; VCC = 3.0 V  
IO = 4.0 mA; VCC = 3.0 V  
VI = GND to 3.6 V; VCC = 0 V to 3.6 V  
VI or VO = 0 V to 3.6 V; VCC = 0 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1  
V
0.3 × VCC  
0.37  
0.35  
0.33  
0.45  
0.33  
0.45  
±0.5  
±0.5  
V
V
V
V
V
V
V
II  
input leakage current  
µA  
µA  
IOFF  
power-off leakage current  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
5 of 19  
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
Table 7.  
Static characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
IOFF additional power-off leakage VI or VO = 0 V to 3.6 V;  
-
-
±0.6  
µA  
current  
V
CC = 0 V to 0.2 V  
VI = GND or VCC; IO = 0 A;  
CC = 0.8 V to 3.6 V  
VI = VCC 0.6 V; IO = 0 A;  
CC = 3.3 V  
ICC  
supply current  
-
-
-
-
0.9  
50  
µA  
µA  
V
ICC  
additional supply current  
V
Tamb = 40 °C to +125 °C  
VOH HIGH-level output voltage  
VI = VT+ or VT−  
IO = 20 µA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
IO = 1.7 mA; VCC = 1.4 V  
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
IO = 3.1 mA; VCC = 2.3 V  
IO = 2.7 mA; VCC = 3.0 V  
IO = 4.0 mA; VCC = 3.0 V  
VI = VT+ or VT−  
V
CC 0.11 -  
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.6 × VCC  
0.93  
1.17  
1.77  
1.67  
2.40  
2.30  
-
-
-
-
-
-
-
VOL  
LOW-level output voltage  
IO = 20 µA; VCC = 0.8 V to 3.6 V  
IO = 1.1 mA; VCC = 1.1 V  
IO = 1.7 mA; VCC = 1.4 V  
IO = 1.9 mA; VCC = 1.65 V  
IO = 2.3 mA; VCC = 2.3 V  
IO = 3.1 mA; VCC = 2.3 V  
IO = 2.7 mA; VCC = 3.0 V  
IO = 4.0 mA; VCC = 3.0 V  
VI = GND to 3.6 V; VCC = 0 V to 3.6 V  
VI or VO = 0 V to 3.6 V; VCC = 0 V  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.11  
V
0.33 × VCC  
0.41  
V
V
0.39  
V
0.36  
V
0.50  
V
0.36  
V
0.50  
V
II  
input leakage current  
±0.75  
±0.75  
±0.75  
µA  
µA  
µA  
IOFF  
IOFF  
power-off leakage current  
additional power-off leakage VI or VO = 0 V to 3.6 V;  
current  
V
CC = 0 V to 0.2 V  
VI = GND or VCC; IO = 0 A;  
CC = 0.8 V to 3.6 V  
VI = VCC 0.6 V; IO = 0 A;  
CC = 3.3 V  
ICC  
supply current  
-
-
-
-
1.4  
75  
µA  
µA  
V
ICC  
additional supply current  
V
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
6 of 19  
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
12. Dynamic characteristics  
Table 8.  
Dynamic characteristics  
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.  
Symbol Parameter  
Conditions  
25 °C  
40 °C to +125 °C  
Unit  
Min Typ[1] Max Min  
Max  
Max  
(85 °C) (125 °C)  
CL = 5 pF  
[2]  
[2]  
[2]  
[2]  
tpd  
propagation delay A to Y; see Figure 7  
VCC = 0.8 V  
-
19.9  
5.9  
4.3  
3.7  
3.0  
2.8  
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
2.7  
2.6  
2.1  
2.0  
1.9  
11.0  
6.6  
5.4  
4.1  
3.6  
2.4  
2.4  
2.0  
1.7  
1.5  
11.1  
7.1  
6.0  
4.5  
3.9  
11.2  
7.4  
6.2  
4.7  
4.0  
CL = 10 pF  
tpd  
propagation delay A to Y; see Figure 7  
VCC = 0.8 V  
-
23.4  
6.8  
5.0  
4.2  
3.6  
3.3  
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
2.9  
2.8  
2.7  
2.3  
2.1  
12.7  
7.7  
6.2  
4.8  
4.3  
2.8  
2.6  
2.5  
2.1  
2.0  
12.8  
8.2  
6.7  
5.2  
4.5  
12.9  
8.6  
7.1  
5.5  
4.7  
CL = 15 pF  
tpd  
propagation delay A to Y; see Figure 7  
VCC = 0.8 V  
-
26.9  
7.6  
5.5  
4.7  
4.0  
3.8  
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
3.3  
3.3  
2.8  
2.7  
2.6  
14.3  
8.6  
7.0  
5.5  
4.8  
3.0  
2.9  
2.8  
2.4  
2.2  
14.5  
9.4  
7.7  
5.9  
5.2  
14.7  
9.8  
8.1  
6.2  
5.4  
CL = 30 pF  
tpd  
propagation delay A to Y; see Figure 7  
VCC = 0.8 V  
-
37.3  
9.8  
7.1  
6.0  
5.2  
4.8  
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
4.0  
3.7  
3.6  
3.5  
3.3  
18.7  
11.2  
9.1  
3.9  
3.8  
3.6  
3.2  
3.1  
19.6  
12.3  
10.0  
7.5  
20.0  
12.9  
10.6  
7.9  
6.9  
6.1  
7.1  
7.4  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
7 of 19  
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
Table 8.  
Dynamic characteristics …continued  
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.  
Symbol Parameter  
Conditions  
25 °C  
40 °C to +125 °C  
Unit  
Min Typ[1] Max Min  
Max  
Max  
(85 °C) (125 °C)  
CL = 5 pF, 10 pF, 15 pF and 30 pF  
CPD power dissipation fi = 1 MHz; VI = GND to VCC  
[3]  
capacitance  
VCC = 0.8 V  
-
-
-
-
-
-
2.6  
2.7  
2.9  
3.1  
3.7  
4.3  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF  
pF  
pF  
pF  
pF  
pF  
VCC = 1.1 V to 1.3 V  
VCC = 1.4 V to 1.6 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 3.0 V to 3.6 V  
[1] All typical values are measured at nominal VCC  
.
[2] tpd is the same as tPLH and tPHL  
.
[3] CPD is used to determine the dynamic power dissipation (PD in µW).  
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
VCC = supply voltage in V;  
N = number of inputs switching;  
Σ(CL × VCC2 × fo) = sum of the outputs.  
13. Waveforms  
V
I
V
A input  
M
GND  
t
t
PHL  
PLH  
V
OH  
V
Y output  
M
V
mna640  
OL  
Measurement points are given in Table 9.  
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.  
Fig 7. The data input (A) to output (Y) propagation delays  
Table 9.  
Measurement points  
Supply voltage  
VCC  
Output  
VM  
Input  
VM  
VI  
tr = tf  
0.8 V to 3.6 V  
0.5 × VCC  
0.5 × VCC  
VCC  
3.0 ns  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
8 of 19  
 
 
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
V
V
EXT  
CC  
5 k  
V
V
O
I
G
DUT  
R
T
C
L
R
L
001aac521  
Test data is given in Table 10.  
Definitions for test circuit:  
RL = Load resistance.  
CL = Load capacitance including jig and probe capacitance.  
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.  
VEXT = External voltage for measuring switching times.  
Fig 8. Load circuitry for switching times  
Table 10. Test data  
Supply voltage  
VCC  
Load  
CL  
VEXT  
[1]  
RL  
tPLH, tPHL  
open  
tPZH, tPHZ  
tPZL, tPLZ  
0.8 V to 3.6 V  
5 pF, 10 pF, 15 pF and 30 pF 5 kor 1 MΩ  
GND  
2 × VCC  
[1] For measuring enable and disable times RL = 5 k, for measuring propagation delays, setup and hold times and pulse width RL = 1 M.  
14. Transfer characteristics  
Table 11. Transfer characteristics  
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.  
Symbol  
Tamb = 25 °C  
VT+  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
positive-going  
threshold voltage  
see Figure 9 and Figure 10  
VCC = 0.8 V  
0.30  
0.53  
0.74  
0.91  
1.37  
1.88  
-
-
-
-
-
-
0.60  
0.90  
1.11  
1.29  
1.77  
2.29  
V
V
V
V
V
V
VCC = 1.1 V  
VCC = 1.4 V  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
VT−  
negative-going  
threshold voltage  
see Figure 9 and Figure 10  
VCC = 0.8 V  
0.10  
0.26  
0.39  
0.47  
0.69  
0.88  
-
-
-
-
-
-
0.60  
0.65  
0.75  
0.84  
1.04  
1.24  
V
V
V
V
V
V
VCC = 1.1 V  
VCC = 1.4 V  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
9 of 19  
 
 
 
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
Table 11. Transfer characteristics …continued  
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VH  
hysteresis voltage  
(VT+ VT)  
see Figure 9, Figure 10,  
Figure 11 and Figure 12  
VCC = 0.8 V  
VCC = 1.1 V  
VCC = 1.4 V  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
0.07  
0.08  
0.18  
0.27  
0.53  
0.79  
-
-
-
-
-
-
0.50  
0.46  
0.56  
0.66  
0.92  
1.31  
V
V
V
V
V
V
Tamb = 40 °C to +85 °C  
VT+  
VT−  
VH  
positive-going  
threshold voltage  
see Figure 9 and Figure 10  
VCC = 0.8 V  
0.30  
0.53  
0.74  
0.91  
1.37  
1.88  
-
-
-
-
-
-
0.60  
0.90  
1.11  
1.29  
1.77  
2.29  
V
V
V
V
V
V
VCC = 1.1 V  
VCC = 1.4 V  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
negative-going  
threshold voltage  
see Figure 9 and Figure 10  
VCC = 0.8 V  
0.10  
0.26  
0.39  
0.47  
0.69  
0.88  
-
-
-
-
-
-
0.60  
0.65  
0.75  
0.84  
1.04  
1.24  
V
V
V
V
V
V
VCC = 1.1 V  
VCC = 1.4 V  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
hysteresis voltage  
(VT+ VT)  
see Figure 9, Figure 10,  
Figure 11 and Figure 12  
VCC = 0.8 V  
VCC = 1.1 V  
VCC = 1.4 V  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
0.07  
0.08  
0.18  
0.27  
0.53  
0.79  
-
-
-
-
-
-
0.50  
0.46  
0.56  
0.66  
0.92  
1.31  
V
V
V
V
V
V
Tamb = 40 °C to +125 °C  
VT+  
positive-going  
threshold voltage  
see Figure 9 and Figure 10  
VCC = 0.8 V  
0.30  
0.53  
0.74  
0.91  
1.37  
1.88  
-
-
-
-
-
-
0.62  
0.92  
1.13  
1.31  
1.80  
2.32  
V
V
V
V
V
V
VCC = 1.1 V  
VCC = 1.4 V  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
10 of 19  
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
Table 11. Transfer characteristics …continued  
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VT−  
negative-going  
threshold voltage  
see Figure 9 and Figure 10  
VCC = 0.8 V  
0.10  
0.26  
0.39  
0.47  
0.69  
0.88  
-
-
-
-
-
-
0.60  
0.65  
0.75  
0.84  
1.04  
1.24  
V
V
V
V
V
V
VCC = 1.1 V  
VCC = 1.4 V  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
VH  
hysteresis voltage  
(VT+ VT)  
see Figure 9, Figure 10,  
Figure 11 and Figure 12  
VCC = 0.8 V  
VCC = 1.1 V  
VCC = 1.4 V  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
0.07  
0.08  
0.18  
0.27  
0.53  
0.79  
-
-
-
-
-
-
0.50  
0.46  
0.56  
0.66  
0.92  
1.31  
V
V
V
V
V
V
15. Waveforms transfer characteristics  
V
T+  
V
O
V
I
V
H
V
T−  
V
O
V
I
mna208  
V
H
V
V
T+  
T−  
mna207  
VT+ and VTlimits at 70 % and 20 %.  
Fig 9. Transfer characteristic  
Fig 10. Definition of VT+, VTand VH  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
11 of 19  
 
 
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
001aad691  
240  
I
CC  
(µA)  
160  
80  
0
0
0.4  
0.8  
1.2  
1.6  
2.0  
V (V)  
I
Fig 11. Typical transfer characteristics; VCC = 1.8 V  
001aad692  
1200  
I
CC  
(µA)  
800  
400  
0
0
1.0  
2.0  
3.0  
V (V)  
I
Fig 12. Typical transfer characteristics; VCC = 3.0 V  
16. Application information  
The slow input rise and fall times cause additional power dissipation, this can be  
calculated using the following formula:  
Pad = fi × (tr × ICC(AV) + tf × ICC(AV)) × VCC where:  
Pad = additional power dissipation (µW);  
fi = input frequency (MHz);  
tr = input rise time (ns); 10 % to 90 %;  
tf = input fall time (ns); 90 % to 10 %;  
ICC(AV) = average additional supply current (µA).  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
12 of 19  
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
Average ICC differs with positive or negative input transitions, as shown in Figure 13.  
An example of a relaxation circuit using the 74AUP1G14 is shown in Figure 14.  
001aad027  
0.3  
I  
CC(AV)  
(mA)  
(1)  
(2)  
0.2  
0.1  
0
0.8  
1.8  
2.8  
3.8  
V
(V)  
CC  
(1) Positive-going edge  
(2) Negative-going edge.  
Fig 13. Average ICC as a function of VCC  
R
C
mna035  
1
T
1
f =  
--- ----------------  
a × RC  
Average values for variable a are given in Table 12.  
Fig 14. Relaxation oscillator  
Table 12. Variable values  
Supply voltage  
1.1 V  
Variable a  
1.28  
1.5 V  
1.22  
1.8 V  
1.24  
2.8 V  
1.34  
3.3 V  
1.45  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
13 of 19  
 
 
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
17. Package outline  
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm  
SOT353-1  
D
E
A
X
c
y
H
v
M
A
E
Z
5
4
A
2
A
(A )  
3
A
1
θ
L
L
p
1
3
e
w M  
b
p
detail X  
e
1
0
1.5  
3 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
(1)  
(1)  
(1)  
A
A
A
b
c
D
E
e
e
1
H
L
L
p
UNIT  
v
w
y
Z
θ
1
2
3
p
E
max.  
0.1  
0
1.0  
0.8  
0.30  
0.15  
0.25  
0.08  
2.25  
1.85  
1.35  
1.15  
2.25  
2.0  
0.46  
0.21  
0.60  
0.15  
7°  
0°  
mm  
1.1  
0.65  
1.3  
0.15  
0.425  
0.3  
0.1  
0.1  
Note  
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
JEITA  
00-09-01  
03-02-19  
SOT353-1  
MO-203  
SC-88A  
Fig 15. Package outline SOT353-1 (TSSOP5)  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
14 of 19  
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm  
SOT886  
b
1
2
3
4×  
(2)  
L
L
1
e
6
5
4
e
1
e
1
6×  
(2)  
A
A
1
D
E
terminal 1  
index area  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
A
A
1
UNIT  
b
D
E
e
e
L
L
1
1
max max  
0.25  
0.17  
1.5  
1.4  
1.05  
0.95  
0.35 0.40  
0.27 0.32  
mm  
0.5 0.04  
0.6  
0.5  
Notes  
1. Including plating thickness.  
2. Can be visible in some manufacturing processes.  
REFERENCES  
JEDEC JEITA  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
04-07-15  
04-07-22  
SOT886  
MO-252  
Fig 16. Package outline SOT886 (XSON6)  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
15 of 19  
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm  
SOT891  
b
1
2
3
4×  
(1)  
L
L
1
e
6
5
4
e
1
e
1
6×  
(1)  
A
A
1
D
E
terminal 1  
index area  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
A
1
UNIT  
b
D
E
e
e
L
L
1
1
max max  
0.20 1.05 1.05  
0.12 0.95 0.95  
0.35 0.40  
0.27 0.32  
mm  
0.5 0.04  
0.55 0.35  
Note  
1. Can be visible in some manufacturing processes.  
REFERENCES  
JEDEC JEITA  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
05-04-06  
07-05-15  
SOT891  
Fig 17. Package outline SOT891 (XSON6)  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
16 of 19  
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
18. Abbreviations  
Table 13. Abbreviations  
Acronym  
CDM  
CMOS  
DUT  
Description  
Charged Device Model  
Complementary Metal Oxide Semiconductor  
Device Under Test  
ESD  
ElectroStatic Discharge  
Human Body Model  
HBM  
MM  
Machine Model  
TTL  
Transistor-Transistor Logic  
19. Revision history  
Table 14. Revision history  
Document ID  
74AUP1G14_3  
Modifications:  
Release date  
Data sheet status  
Change notice  
Supersedes  
20090708  
Product data sheet  
-
74AUP1G14_2  
The format of this data sheet has been redesigned to comply with the new identity guidelines of  
NXP Semiconductors.  
Legal texts have been adapted to the new company name where appropriate.  
Section 9 “Limiting values”:  
Changed: Derating factor of XSON6 packages.  
Section 11 “Static characteristics”:  
Changed: conditions for HIGH-level output voltage and LOW-level output voltage.  
74AUP1G14_2  
74AUP1G14_1  
20060828  
20050718  
Product data sheet  
Product data sheet  
-
-
74AUP1G14_1  
-
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
17 of 19  
 
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
20. Legal information  
20.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
20.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
20.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
20.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
21. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
74AUP1G14_3  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 03 — 8 July 2009  
18 of 19  
 
 
 
 
 
 
74AUP1G14  
NXP Semiconductors  
Low-power Schmitt trigger inverter  
22. Contents  
1
2
3
4
5
6
General description . . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2  
7
7.1  
7.2  
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3  
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3  
8
Functional description . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Recommended operating conditions. . . . . . . . 4  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7  
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Transfer characteristics. . . . . . . . . . . . . . . . . . . 9  
Waveforms transfer characteristics. . . . . . . . 11  
Application information. . . . . . . . . . . . . . . . . . 12  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
20.1  
20.2  
20.3  
20.4  
21  
22  
Contact information. . . . . . . . . . . . . . . . . . . . . 18  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 8 July 2009  
Document identifier: 74AUP1G14_3  
 

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