74AUP1G14GF,132 [NXP]
74AUP1G14 - Low-power Schmitt trigger inverter SON 6-Pin;型号: | 74AUP1G14GF,132 |
厂家: | NXP |
描述: | 74AUP1G14 - Low-power Schmitt trigger inverter SON 6-Pin 栅 光电二极管 逻辑集成电路 触发器 |
文件: | 总19页 (文件大小:93K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
74AUP1G14
Low-power Schmitt trigger inverter
Rev. 03 — 8 July 2009
Product data sheet
1. General description
The 74AUP1G14 provides a single inverting Schmitt trigger which accepts standard input
signals. It is capable of transforming slowly changing input signals into sharply defined,
jitter-free output signals.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF
.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The inputs switch at different points for positive and negative-going signals. The difference
between the positive voltage VT+ and the negative voltage VT− is defined as the input
hysteresis voltage VH.
2. Features
I Wide supply voltage range from 0.8 V to 3.6 V
I High noise immunity
I ESD protection:
N HBM JESD22-A114E Class 3A exceeds 5000 V
N MM JESD22-A115-A exceeds 200 V
N CDM JESD22-C101C exceeds 1000 V
I Low static power consumption; ICC = 0.9 µA (maximum)
I Latch-up performance exceeds 100 mA per JESD 78 Class II
I Inputs accept voltages up to 3.6 V
I Low noise overshoot and undershoot < 10 % of VCC
I IOFF circuitry provides partial Power-down mode operation
I Multiple package options
I Specified from −40 °C to +85 °C and −40 °C to +125 °C
3. Applications
I Wave and pulse shaper
I Astable multivibrator
I Monostable multivibrator
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
4. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
74AUP1G14GW
74AUP1G14GM
74AUP1G14GF
−40 °C to +125 °C
−40 °C to +125 °C
−40 °C to +125 °C
TSSOP5
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SOT353-1
XSON6
XSON6
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1 × 1.45 × 0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1 × 1 × 0.5 mm
5. Marking
Table 2.
Marking
Type number
Marking code[1]
74AUP1G14GW
74AUP1G14GM
74AUP1G14GF
pF
pF
pF
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
6. Functional diagram
A
Y
4
2
A
Y
2
4
mna025
mna023
mna024
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
2 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
7. Pinning information
7.1 Pinning
74AUP1G14
74AUP1G14
n.c.
A
1
2
3
6
5
4
V
CC
74AUP1G14
1
2
3
5
4
n.c.
A
V
Y
n.c.
A
1
2
3
6
5
4
V
CC
CC
n.c.
Y
n.c.
Y
GND
GND
GND
001aaf122
001aaf123
Transparent top view
Transparent top view
001aaf121
Fig 4. Pin configuration SOT353-1
(TSSOP5)
Fig 5. Pin configuration SOT886
(XSON6)
Fig 6. Pin configuration SOT891
(XSON6)
7.2 Pin description
Table 3.
Symbol
Pin description
Pin
Description
TSSOP5
XSON6
n.c.
A
1
2
3
4
-
1
2
3
4
5
6
not connected
data input
GND
Y
ground (0 V)
data output
n.c.
VCC
not connected
supply voltage
5
8. Functional description
Table 4.
Function table[1]
Input
Output
A
L
Y
H
L
H
[1] H = HIGH voltage level;
L = LOW voltage level.
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
3 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
VCC
IIK
Parameter
Conditions
Min
−0.5
−50
−0.5
−50
−0.5
-
Max
+4.6
-
Unit
V
supply voltage
input clamping current
input voltage
VI < 0 V
mA
V
[1]
[1]
VI
+4.6
-
IOK
output clamping current
output voltage
VO < 0 V
mA
V
VO
Active mode and Power-down mode
VO = 0 V to VCC
+4.6
±20
+50
-
IO
output current
mA
mA
mA
°C
ICC
supply current
-
IGND
Tstg
Ptot
ground current
−50
−65
-
storage temperature
total power dissipation
+150
250
[2]
Tamb = −40 °C to +125 °C
mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For TSSOP5 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.
10. Recommended operating conditions
Table 6.
Symbol
VCC
Recommended operating conditions
Parameter
Conditions
Min
0.8
0
Max
3.6
Unit
supply voltage
V
VI
input voltage
3.6
V
VO
output voltage
Active mode
0
VCC
3.6
V
Power-down mode; VCC = 0 V
0
V
Tamb
ambient temperature
−40
+125
°C
11. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 °C
VOH
HIGH-level output voltage
VI = VT+ or VT−
IO = −20 µA; VCC = 0.8 V to 3.6 V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
V
CC − 0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.75 × VCC
1.11
1.32
2.05
1.9
2.72
2.6
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
4 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VOL
LOW-level output voltage
VI = VT+ or VT−
IO = 20 µA; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
V
0.3 × VCC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
±0.2
±0.2
V
V
V
V
V
V
V
II
input leakage current
µA
µA
µA
IOFF
∆IOFF
power-off leakage current
additional power-off leakage VI or VO = 0 V to 3.6 V;
current
V
CC = 0 V to 0.2 V
VI = GND or VCC; IO = 0 A;
CC = 0.8 V to 3.6 V
VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
ICC
supply current
-
-
-
-
0.5
40
µA
µA
V
∆ICC
additional supply current
V
CI
input capacitance
output capacitance
VI = GND or VCC; VCC = 0 V to 3.6 V
VO = GND; VCC = 0 V
-
-
1.1
1.7
-
-
pF
pF
CO
Tamb = −40 °C to +85 °C
VOH HIGH-level output voltage
VI = VT+ or VT−
IO = −20 µA; VCC = 0.8 V to 3.6 V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
VI = VT+ or VT−
V
CC − 0.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.7 × VCC
1.03
1.30
1.97
1.85
2.67
2.55
VOL
LOW-level output voltage
IO = 20 µA; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
V
0.3 × VCC
0.37
0.35
0.33
0.45
0.33
0.45
±0.5
±0.5
V
V
V
V
V
V
V
II
input leakage current
µA
µA
IOFF
power-off leakage current
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
5 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
∆IOFF additional power-off leakage VI or VO = 0 V to 3.6 V;
-
-
±0.6
µA
current
V
CC = 0 V to 0.2 V
VI = GND or VCC; IO = 0 A;
CC = 0.8 V to 3.6 V
VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
ICC
supply current
-
-
-
-
0.9
50
µA
µA
V
∆ICC
additional supply current
V
Tamb = −40 °C to +125 °C
VOH HIGH-level output voltage
VI = VT+ or VT−
IO = −20 µA; VCC = 0.8 V to 3.6 V
IO = −1.1 mA; VCC = 1.1 V
IO = −1.7 mA; VCC = 1.4 V
IO = −1.9 mA; VCC = 1.65 V
IO = −2.3 mA; VCC = 2.3 V
IO = −3.1 mA; VCC = 2.3 V
IO = −2.7 mA; VCC = 3.0 V
IO = −4.0 mA; VCC = 3.0 V
VI = VT+ or VT−
V
CC − 0.11 -
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.6 × VCC
0.93
1.17
1.77
1.67
2.40
2.30
-
-
-
-
-
-
-
VOL
LOW-level output voltage
IO = 20 µA; VCC = 0.8 V to 3.6 V
IO = 1.1 mA; VCC = 1.1 V
IO = 1.7 mA; VCC = 1.4 V
IO = 1.9 mA; VCC = 1.65 V
IO = 2.3 mA; VCC = 2.3 V
IO = 3.1 mA; VCC = 2.3 V
IO = 2.7 mA; VCC = 3.0 V
IO = 4.0 mA; VCC = 3.0 V
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.11
V
0.33 × VCC
0.41
V
V
0.39
V
0.36
V
0.50
V
0.36
V
0.50
V
II
input leakage current
±0.75
±0.75
±0.75
µA
µA
µA
IOFF
∆IOFF
power-off leakage current
additional power-off leakage VI or VO = 0 V to 3.6 V;
current
V
CC = 0 V to 0.2 V
VI = GND or VCC; IO = 0 A;
CC = 0.8 V to 3.6 V
VI = VCC − 0.6 V; IO = 0 A;
CC = 3.3 V
ICC
supply current
-
-
-
-
1.4
75
µA
µA
V
∆ICC
additional supply current
V
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
6 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
12. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min Typ[1] Max Min
Max
Max
(85 °C) (125 °C)
CL = 5 pF
[2]
[2]
[2]
[2]
tpd
propagation delay A to Y; see Figure 7
VCC = 0.8 V
-
19.9
5.9
4.3
3.7
3.0
2.8
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
2.7
2.6
2.1
2.0
1.9
11.0
6.6
5.4
4.1
3.6
2.4
2.4
2.0
1.7
1.5
11.1
7.1
6.0
4.5
3.9
11.2
7.4
6.2
4.7
4.0
CL = 10 pF
tpd
propagation delay A to Y; see Figure 7
VCC = 0.8 V
-
23.4
6.8
5.0
4.2
3.6
3.3
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
2.9
2.8
2.7
2.3
2.1
12.7
7.7
6.2
4.8
4.3
2.8
2.6
2.5
2.1
2.0
12.8
8.2
6.7
5.2
4.5
12.9
8.6
7.1
5.5
4.7
CL = 15 pF
tpd
propagation delay A to Y; see Figure 7
VCC = 0.8 V
-
26.9
7.6
5.5
4.7
4.0
3.8
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
3.3
3.3
2.8
2.7
2.6
14.3
8.6
7.0
5.5
4.8
3.0
2.9
2.8
2.4
2.2
14.5
9.4
7.7
5.9
5.2
14.7
9.8
8.1
6.2
5.4
CL = 30 pF
tpd
propagation delay A to Y; see Figure 7
VCC = 0.8 V
-
37.3
9.8
7.1
6.0
5.2
4.8
-
-
-
-
ns
ns
ns
ns
ns
ns
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
4.0
3.7
3.6
3.5
3.3
18.7
11.2
9.1
3.9
3.8
3.6
3.2
3.1
19.6
12.3
10.0
7.5
20.0
12.9
10.6
7.9
6.9
6.1
7.1
7.4
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
7 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Unit
Min Typ[1] Max Min
Max
Max
(85 °C) (125 °C)
CL = 5 pF, 10 pF, 15 pF and 30 pF
CPD power dissipation fi = 1 MHz; VI = GND to VCC
[3]
capacitance
VCC = 0.8 V
-
-
-
-
-
-
2.6
2.7
2.9
3.1
3.7
4.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
pF
pF
pF
VCC = 1.1 V to 1.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 3.0 V to 3.6 V
[1] All typical values are measured at nominal VCC
.
[2] tpd is the same as tPLH and tPHL
.
[3] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
13. Waveforms
V
I
V
A input
M
GND
t
t
PHL
PLH
V
OH
V
Y output
M
V
mna640
OL
Measurement points are given in Table 9.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 7. The data input (A) to output (Y) propagation delays
Table 9.
Measurement points
Supply voltage
VCC
Output
VM
Input
VM
VI
tr = tf
0.8 V to 3.6 V
0.5 × VCC
0.5 × VCC
VCC
≤ 3.0 ns
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
8 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
V
V
EXT
CC
5 kΩ
V
V
O
I
G
DUT
R
T
C
L
R
L
001aac521
Test data is given in Table 10.
Definitions for test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
VEXT = External voltage for measuring switching times.
Fig 8. Load circuitry for switching times
Table 10. Test data
Supply voltage
VCC
Load
CL
VEXT
[1]
RL
tPLH, tPHL
open
tPZH, tPHZ
tPZL, tPLZ
0.8 V to 3.6 V
5 pF, 10 pF, 15 pF and 30 pF 5 kΩ or 1 MΩ
GND
2 × VCC
[1] For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ.
14. Transfer characteristics
Table 11. Transfer characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol
Tamb = 25 °C
VT+
Parameter
Conditions
Min
Typ
Max
Unit
positive-going
threshold voltage
see Figure 9 and Figure 10
VCC = 0.8 V
0.30
0.53
0.74
0.91
1.37
1.88
-
-
-
-
-
-
0.60
0.90
1.11
1.29
1.77
2.29
V
V
V
V
V
V
VCC = 1.1 V
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3.0 V
VT−
negative-going
threshold voltage
see Figure 9 and Figure 10
VCC = 0.8 V
0.10
0.26
0.39
0.47
0.69
0.88
-
-
-
-
-
-
0.60
0.65
0.75
0.84
1.04
1.24
V
V
V
V
V
V
VCC = 1.1 V
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3.0 V
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
9 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
Table 11. Transfer characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VH
hysteresis voltage
(VT+ − VT−)
see Figure 9, Figure 10,
Figure 11 and Figure 12
VCC = 0.8 V
VCC = 1.1 V
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3.0 V
0.07
0.08
0.18
0.27
0.53
0.79
-
-
-
-
-
-
0.50
0.46
0.56
0.66
0.92
1.31
V
V
V
V
V
V
Tamb = −40 °C to +85 °C
VT+
VT−
VH
positive-going
threshold voltage
see Figure 9 and Figure 10
VCC = 0.8 V
0.30
0.53
0.74
0.91
1.37
1.88
-
-
-
-
-
-
0.60
0.90
1.11
1.29
1.77
2.29
V
V
V
V
V
V
VCC = 1.1 V
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3.0 V
negative-going
threshold voltage
see Figure 9 and Figure 10
VCC = 0.8 V
0.10
0.26
0.39
0.47
0.69
0.88
-
-
-
-
-
-
0.60
0.65
0.75
0.84
1.04
1.24
V
V
V
V
V
V
VCC = 1.1 V
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3.0 V
hysteresis voltage
(VT+ − VT−)
see Figure 9, Figure 10,
Figure 11 and Figure 12
VCC = 0.8 V
VCC = 1.1 V
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3.0 V
0.07
0.08
0.18
0.27
0.53
0.79
-
-
-
-
-
-
0.50
0.46
0.56
0.66
0.92
1.31
V
V
V
V
V
V
Tamb = −40 °C to +125 °C
VT+
positive-going
threshold voltage
see Figure 9 and Figure 10
VCC = 0.8 V
0.30
0.53
0.74
0.91
1.37
1.88
-
-
-
-
-
-
0.62
0.92
1.13
1.31
1.80
2.32
V
V
V
V
V
V
VCC = 1.1 V
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3.0 V
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
10 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
Table 11. Transfer characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VT−
negative-going
threshold voltage
see Figure 9 and Figure 10
VCC = 0.8 V
0.10
0.26
0.39
0.47
0.69
0.88
-
-
-
-
-
-
0.60
0.65
0.75
0.84
1.04
1.24
V
V
V
V
V
V
VCC = 1.1 V
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3.0 V
VH
hysteresis voltage
(VT+ − VT−)
see Figure 9, Figure 10,
Figure 11 and Figure 12
VCC = 0.8 V
VCC = 1.1 V
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 3.0 V
0.07
0.08
0.18
0.27
0.53
0.79
-
-
-
-
-
-
0.50
0.46
0.56
0.66
0.92
1.31
V
V
V
V
V
V
15. Waveforms transfer characteristics
V
T+
V
O
V
I
V
H
V
T−
V
O
V
I
mna208
V
H
V
V
T+
T−
mna207
VT+ and VT− limits at 70 % and 20 %.
Fig 9. Transfer characteristic
Fig 10. Definition of VT+, VT− and VH
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
11 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
001aad691
240
I
CC
(µA)
160
80
0
0
0.4
0.8
1.2
1.6
2.0
V (V)
I
Fig 11. Typical transfer characteristics; VCC = 1.8 V
001aad692
1200
I
CC
(µA)
800
400
0
0
1.0
2.0
3.0
V (V)
I
Fig 12. Typical transfer characteristics; VCC = 3.0 V
16. Application information
The slow input rise and fall times cause additional power dissipation, this can be
calculated using the following formula:
Pad = fi × (tr × ICC(AV) + tf × ICC(AV)) × VCC where:
Pad = additional power dissipation (µW);
fi = input frequency (MHz);
tr = input rise time (ns); 10 % to 90 %;
tf = input fall time (ns); 90 % to 10 %;
ICC(AV) = average additional supply current (µA).
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
12 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
Average ICC differs with positive or negative input transitions, as shown in Figure 13.
An example of a relaxation circuit using the 74AUP1G14 is shown in Figure 14.
001aad027
0.3
∆I
CC(AV)
(mA)
(1)
(2)
0.2
0.1
0
0.8
1.8
2.8
3.8
V
(V)
CC
(1) Positive-going edge
(2) Negative-going edge.
Fig 13. Average ICC as a function of VCC
R
C
mna035
1
T
1
f =
≈
--- ----------------
a × RC
Average values for variable a are given in Table 12.
Fig 14. Relaxation oscillator
Table 12. Variable values
Supply voltage
1.1 V
Variable a
1.28
1.5 V
1.22
1.8 V
1.24
2.8 V
1.34
3.3 V
1.45
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
13 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
17. Package outline
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm
SOT353-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
4
A
2
A
(A )
3
A
1
θ
L
L
p
1
3
e
w M
b
p
detail X
e
1
0
1.5
3 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
A
A
A
b
c
D
E
e
e
1
H
L
L
p
UNIT
v
w
y
Z
θ
1
2
3
p
E
max.
0.1
0
1.0
0.8
0.30
0.15
0.25
0.08
2.25
1.85
1.35
1.15
2.25
2.0
0.46
0.21
0.60
0.15
7°
0°
mm
1.1
0.65
1.3
0.15
0.425
0.3
0.1
0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
00-09-01
03-02-19
SOT353-1
MO-203
SC-88A
Fig 15. Package outline SOT353-1 (TSSOP5)
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
14 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b
1
2
3
4×
(2)
L
L
1
e
6
5
4
e
1
e
1
6×
(2)
A
A
1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
1
UNIT
b
D
E
e
e
L
L
1
1
max max
0.25
0.17
1.5
1.4
1.05
0.95
0.35 0.40
0.27 0.32
mm
0.5 0.04
0.6
0.5
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
04-07-15
04-07-22
SOT886
MO-252
Fig 16. Package outline SOT886 (XSON6)
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
15 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm
SOT891
b
1
2
3
4×
(1)
L
L
1
e
6
5
4
e
1
e
1
6×
(1)
A
A
1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
A
1
UNIT
b
D
E
e
e
L
L
1
1
max max
0.20 1.05 1.05
0.12 0.95 0.95
0.35 0.40
0.27 0.32
mm
0.5 0.04
0.55 0.35
Note
1. Can be visible in some manufacturing processes.
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
05-04-06
07-05-15
SOT891
Fig 17. Package outline SOT891 (XSON6)
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
16 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
18. Abbreviations
Table 13. Abbreviations
Acronym
CDM
CMOS
DUT
Description
Charged Device Model
Complementary Metal Oxide Semiconductor
Device Under Test
ESD
ElectroStatic Discharge
Human Body Model
HBM
MM
Machine Model
TTL
Transistor-Transistor Logic
19. Revision history
Table 14. Revision history
Document ID
74AUP1G14_3
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20090708
Product data sheet
-
74AUP1G14_2
• The format of this data sheet has been redesigned to comply with the new identity guidelines of
NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 9 “Limiting values”:
Changed: Derating factor of XSON6 packages.
• Section 11 “Static characteristics”:
Changed: conditions for HIGH-level output voltage and LOW-level output voltage.
74AUP1G14_2
74AUP1G14_1
20060828
20050718
Product data sheet
Product data sheet
-
-
74AUP1G14_1
-
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
17 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
20. Legal information
20.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
20.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
20.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
20.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
21. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
74AUP1G14_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 8 July 2009
18 of 19
74AUP1G14
NXP Semiconductors
Low-power Schmitt trigger inverter
22. Contents
1
2
3
4
5
6
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
7
7.1
7.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
8
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Transfer characteristics. . . . . . . . . . . . . . . . . . . 9
Waveforms transfer characteristics. . . . . . . . 11
Application information. . . . . . . . . . . . . . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
9
10
11
12
13
14
15
16
17
18
19
20
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
20.1
20.2
20.3
20.4
21
22
Contact information. . . . . . . . . . . . . . . . . . . . . 18
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 8 July 2009
Document identifier: 74AUP1G14_3
相关型号:
©2020 ICPDF网 联系我们和版权申明