74HC2G14 [NXP]
Inverting Schmitt-triggers; 施密特触发器型号: | 74HC2G14 |
厂家: | NXP |
描述: | Inverting Schmitt-triggers |
文件: | 总17页 (文件大小:75K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
74HC2G14; 74HCT2G14
Inverting Schmitt-triggers
Preliminary specification
2003 May 1
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
FEATURES
• Monostable multivibrators
• Output capability: standard.
• Wide supply voltage range from 2.0 to 6.0 V
• High noise immunity
DESCRIPTION
• Low power dissipation
The 74HC2G/HCT2G14 is a high-speed Si-gate CMOS
device.
• Balanced propagation delays
• Unlimited input rise and fall times
• Very small 6 pins package.
The 74HC2G/HCT2G14 provides two inverting buffers
with Schmitt-trigger action. This device is capable of
transforming slowly changing input signals into sharply
defined, jitter-free output signals.
APPLICATIONS
• Wave and pulse shapers for highly noisy environments
• Astable multivibrators
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.
TYPICAL
SYMBOL
PARAMETER
CONDITIONS
UNIT
ns
HC2G
HCT2G
tPHL/tPLH propagation delay nA to nY
CL = 50 pF; VCC = 4.5 V
16
2
21
2
CI
input capacitance
pF
pF
CPD
power dissipation capacitance
notes 1 and 2
10
10
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz; fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total switching outputs;
∑ (CL × VCC2 × fo) = sum of outputs.
2. For HC2G the condition is VI = GND to VCC
.
For HCT2G the condition is VI = GND to VCC − 1.5 V.
FUNCTION TABLE
See note 1.
INPUTS
nA
OUTPUTS
nY
L
H
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
2003 May 1
2
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
ORDERING INFORMATION
TYPE NUMBER
PACKAGES
TEMPERATURE RANGE PINS PACKAGE MATERIAL
CODE
MARKING
74HC2G14GW
74HC2G14GV
74HCT2G14GW
74HCT2G14GV
−40 to +125 °C
−40 to +125 °C
−40 to +125 °C
−40 to +125 °C
6
6
6
6
SC-88
SC-74
SC-88
SC-74
plastic
plastic
plastic
plastic
SOT363
SOT457
SOT363
SOT457
HK
H14
TK
T14
PINNING
PIN
SYMBOL
1A to 2A
DESCRIPTION
1, 3
2
data input
GND
ground (0 V)
4, 6
8
2Y to 1Y
VCC
data output
DC supply voltage
1A
1
1Y
2Y
1
2
3
1A
GND
2A
6
5
4
1Y
V
6
4
14
CC
2A
3
2Y
Fig.1 Pin configuration.
Fig.2 Logic symbol.
1A
2A
1Y
2Y
6
4
1
3
Fig.3 IEC logic symbol.
Fig.4 Logic diagram (one driver).
2003 May 1
3
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
RECOMMENDED OPERATING CONDITIONS
74HC2G14
74HCT2G14
UNIT
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
2.0
TYP. MAX. MIN.
TYP. MAX.
VCC
VI
5.0
−
6.0
4.5
0
5.0
5.5
V
V
V
input voltage
0
VCC
VCC
−
VCC
VCC
VO
output voltage
0
−
0
−
Tamb
operating ambient
temperature
see DC and AC
characteristics per
device
−40
+25
+125 −40
+25
+125 °C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
VCC
IIK
PARAMETER
supply voltage
CONDITIONS
MIN. MAX. UNIT
−0.5
−
+7.0
±20
±20
25
V
input diode current
VI < −0.5 V or VI > VCC + 0.5 V; note 1
VO < −0.5 V or VO > VCC + 0.5 V; note 1
−0.5 V < VO < VCC + 0.5 V; note 1
note 1
mA
mA
mA
mA
IOK
output diode current
−
IO
output source or sink current
VCC or GND current
−
ICC
−
50
Tstg
PD
storage temperature
−65
−
+150 °C
300 mW
power dissipation per package
for temperature range from −40 to +125 °C;
note 2
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110 °C the value of PD derates linearly with 8 mW/K.
2003 May 1
4
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
DC CHARACTERISTICS
Type 74HC2G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS Tamb (°C)
−40 to +85 −40 to +125 UNIT
MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX.
SYMBOL
PARAMETER
+25
OTHER
VCC (V)
VOH
HIGH-level
output voltage
VI = VIH or VIL:
IO = −20 µA
2.0
4.5
6.0
4.5
6.0
2.0
4.5
6.0
4.5
6.0
1.9
4.4
5.9
2.0
4.5
6.0
−
1.9
4.4
5.9
4.13
5.63
−
−
1.9
4.4
5.9
3.7
5.2
−
−
V
V
V
V
V
V
V
V
V
V
VI = VIH or VIL:
IO = −20 µA
−
−
−
VI = VIH or VIL:
IO = −20 µA
−
−
−
VI = VIH or VIL;
IO = −4.0 mA
4.18 4.32
5.68 5.81
−
−
−
VI = VIH or VIL;
IO = −5.2 mA
−
−
−
VOL
LOW-level output VI = VIH or VIL;
voltage
−
−
−
−
−
−
−
0
0.1
0.1
0.1
0.26
0.26
±0.1
1.0
0.1
0.1
0.1
0.33
0.33
±1.0
10
0.1
0.1
0.1
0.4
0.4
IO = 20 µA
VI = VIH or VIL;
IO = 20 µA
0
−
−
VI = VIH or VIL;
IO = 20 µA
0
−
−
VI = VIH or VIL;
IO = 4.0 mA
0.15
0.16
−
−
−
VI = VIH or VIL;
IO = 5.2 mA
−
−
II
input leakage
current
VI = VCC or GND 6.0
−
−
±1.0 µA
20 µA
ICC
quiescent supply VI = VCC or GND; 6.0
current IO = 0
−
−
−
Note
1. All typical values are measured at Tamb = 25 °C.
2003 May 1
5
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
Type 74HCT2G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS Tamb (°C)
−40 to +85 −40 to +125 UNIT
MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX.
SYMBOL PARAMETER
+25
OTHER
VCC (V)
VOH
HIGH-level
output voltage
VI = VIH or VIL;
IO = −20 µA
4.5
4.5
4.5
4.5
4.4
4.5
−
4.4
4.13
−
−
4.4
3.7
−
−
V
V
V
V
VI = VIH or VIL;
IO = −4.0 mA
4.18 4.32
−
−
−
VOL
LOW-leveloutput VI = VIH or VIL;
voltage
−
−
−
−
0
0.1
0.26
±0.1
1.0
300
0.1
0.33
±1.0
10
0.1
0.4
IO = 20 µA
VI = VIH or VIL;
IO = 4.0 mA
0.15
−
−
II
input leakage
current
VI = VCC or GND 5.5
−
−
−
−
−
±1.0 µA
ICC
∆ICC
quiescent supply VI = VCC or GND; 5.5
current IO = 0
−
−
20
µA
µA
additional supply VI = VCC − 2.1 V; 4.5 to 5.5 −
−
375
−
410
current per input IO = 0
Note
1. All typical values are measured at Tamb = 25 °C.
2003 May 1
6
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
TRANSFER CHARACTERISTICS
Type 74HC2G14
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
TEST CONDITIONS Tamb (°C)
−40 to +85 −40 to +125 UNIT
MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX.
SYMBOL
PARAMETER
+25
VCC
(V)
WAVEFORMS
Vt+
positive going
threshold
see Figs. 5 and 6 2.0
1.0
2.3
3.0
0.3
1.18
2.6
1.5
1.0
1.5
1.0
1.5
3.15
4.2
V
V
V
V
V
V
V
V
V
4.5
6.0
3.15 2.3
3.15 2.3
3.46
0.6
4.2
0.9
2.0
2.6
1.0
1.4
1.7
3.0
0.3
4.2
0.9
3.0
0.3
Vt−
negative going see Figs. 5 and 6 2.0
threshold
0.9
4.5
1.13 1.47
1.13 2.0
1.13 2.0
6.0
1.5
0.3
0.6
0.8
2.06
0.6
1.5
0.3
0.6
0.8
2.6
1.0
1.4
1.7
1.5
0.3
0.6
0.8
2.6
1.0
1.4
1.7
Vh
hysteresis
(Vt+ - Vt−)
see Figs. 5 and 6 2.0
4.5
6.0
1.13
1.40
Note
1. All typical values are measured at Tamb = 25 °C.
Type 74HCT2G14
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
TEST CONDITIONS Tamb (°C)
−40 to +85 −40 to +125 UNIT
MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX.
SYMBOL
PARAMETER
+25
VCC
(V)
OTHER
Vt+
positive going
threshold
see Figs. 5 and 6 4.5
5.5
1.2
1.4
0.5
0.6
0.4
0.4
1.58
1.78
0.87
1.11
0.71
0.67
1.9
2.1
1.2
1.4
−
1.2
1.4
0.5
0.6
0.4
0.4
1.9
2.1
1.2
1.4
−
1.2
1.4
0.5
0.6
0.4
0.4
1.9
2.1
1.2
1.4
−
V
V
V
V
V
V
Vt−
Vh
negative going see Figs. 5 and 6 4.5
threshold
5.5
hysteresis
(Vt+ - Vt−)
see Figs. 5 and 6 4.5
5.5
−
−
−
Note
1. All typical values are measured at Tamb = 25 °C.
2003 May 1
7
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
TRANSFER CHARACTERISTIC WAVEFORMS
handbook, halfpage
V
T+
handbook, halfpage
V
I
V
V
H
O
V
T−
V
O
MNA027
V
V
I
H
V
V
T+
T−
MNA026
Fig.6 The definitions of VT+, VT− and VH; where
T+ and VT− are between limits of 20% and
70%.
V
Fig.5 Transfer characteristic.
MNA028
MNA029
100
1.0
handbook, halfpage
handbook, halfpage
I
CC
(mA)
I
CC
0.8
(µA)
0.6
0.4
0.2
50
0
0
0
0
1.0
2.0
2.5
5.0
V (V)
I
V (V)
I
Fig.7 Typical HC2G transfer characteristics;
VCC = 2.0 V.
Fig.8 Typical HC2G transfer characteristics;
VCC = 4.5 V.
2003 May 1
8
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
MNA030
1.6
handbook, halfpage
I
CC
(mA)
0.8
0
0
3.0
6.0
V (V)
I
Fig.9 Typical HC2G transfer characteristics;
VCC = 6.0 V.
MNA031
2.0
MNA032
handbook, halfpage
3.0
handbook, halfpage
I
I
CC
CC
(mA)
(mA)
2.0
1.0
1.0
0
0
0
0
2.5
5.0
V (V)
I
3.0
6.0
V (V)
I
Fig.10 Typical HCT2G transfer characteristics;
VCC = 4.5 V.
Fig.11 Typical HCT2G transfer characteristics;
VCC = 5.5 V.
2003 May 1
9
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
AC CHARACTERISTICS
Type 74HC2G14
GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF.
TEST CONDITIONS
Tamb (°C)
SYMBOL
PARAMETER
+25
−40 to +85 −40 to +125 UNIT
VCC
(V)
WAVEFORMS
MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX.
t
PHL/tPLH propagation delay see Figs 12 and 13 2.0
−
−
−
−
−
−
53
16
13
20
7
125
25
21
75
15
13
−
−
−
−
−
−
155
31
26
95
19
16
−
−
−
−
−
−
190 ns
38 ns
32 ns
110 ns
22 ns
19 ns
nA to nY
4.5
6.0
tTHL/tTLH output transition
time
see Figs 12 and 13 2.0
4.5
6.0
5
Note
1. All typical values are measured at Tamb = 25 °C.
Type 74HCT2G14
GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF.
TEST CONDITIONS
Tamb (°C)
SYMBOL
PARAMETER
+25
−40 to +85 −40 to +125 UNIT
VCC
(V)
WAVEFORMS
MIN. TYP.(1) MAX. MIN. MAX. MIN. MAX.
tPHL/tPLH propagation delay see Figs 12 and 13 4.5
nA to nY
−
21
32
−
40
−
48 ns
tTHL/tTLH output transition
time
see Figs 12 and 13 4.5
−
6
15
−
19
−
22 ns
Note
1. All typical values are measured at Tamb = 25 °C.
2003 May 1
10
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
AC WAVEFORMS
V
handbook, halfpage
I
V
V
M
nA input
M
GND
t
t
PHL
PLH
V
OH
90%
V
V
nY output
M
M
10%
V
OL
t
t
TLH
MNA722
THL
For HC2G: VM = 50%; VI = GND to VCC
.
For HCT2G: VM = 1.3 V; VI = GND to 3.0 V.
Fig.12 The input (nA) to output (nY) propagation delays and output transition times.
S1
V
CC
open
V
CC
GND
R
=
L
1 kΩ
V
V
O
I
PULSE
GENERATOR
D.U.T.
C
50 pF
=
L
R
T
MNA742
TEST
S1
tPLH/tPHL
tPLZ/tPZL
tPHZ/tPZH
open
VCC
Definitions for test circuit:
CL = load capacitance including jig and probe capacitance (see “AC characteristics”).
GND
RT = termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig.13 Load circuitry for switching times.
11
2003 May 1
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
APPLICATION INFORMATION
The slow input rise and fall times cause additional power
dissipation, this can be calculated using the following
formula:
MNA036
200
handbook, halfpage
I
CC(AV)
(µA)
Pad = fi × (tr × ICCa + tf × ICCa) × VCC
Where:
150
Pad = additional power dissipation (µW)
fi = input frequency (MHz)
positive-going
edge
100
50
tr = input rise time (ns); 10% to 90%
tf = input fall time (ns); 90% to 10%
ICCa = average additional supply current (µA).
Average ICCa differs with positive or negative input
transitions, as shown in Fig.14 and Fig.15.
negative-going
edge
HC2G14/HCT2G14 used in relaxation oscillator circuit,
see Fig.16.
0
0
2.0
4.0
6.0
V
(V)
CC
Note to the application information:
1. All values given are typical unless otherwise
specified.
Fig.14 Average ICC for HC Schmitt-trigger devices;
linear change of VI between
0.1VCC to 0.9VCC
.
MNA058
200
handbook, halfpage
I
CC(AV)
(µA)
R
handbook, halfpage
150
positive-going
edge
C
100
MNA035
negative-going
50
edge
1
T
1
0
For HC2G: f =
≈
--- -----------------------
0.8 × RC
0
2
4
6
V
(V)
CC
1
T
1
For HCT2G: f =
≈
--- --------------------------
0.67 × RC
Fig.15 Average ICC for HCT Schmitt-trigger
devices; linear change of VI between
Fig.16 Relaxation oscillator using the
HC2G/HCT2G14.
0.1VCC to 0.9VCC
.
2003 May 1
12
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT363
SC-88
2003 May 1
13
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
1
b
c
D
E
e
H
L
Q
v
w
y
p
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
01-05-04
SOT457
SC-74
2003 May 1
14
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by
a smooth laminar wave.
This text gives a very brief insight to a complex
technology. A more in-depth account of soldering ICs can
be found in our “Data Handbook IC26; Integrated Circuit
Packages” (document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine
pitch SMDs. In these situations reflow soldering is
recommended.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling
or pressure-syringe dispensing before package
placement.
• For packages with leads on four sides, the footprint
must be placed at a 45° angle to the transport direction
of the printed-circuit board. The footprint must
incorporate solder thieves downstream and at the side
corners.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
During placement and before soldering, the package
must be fixed with a droplet of adhesive. The adhesive
can be applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 220 °C for
thick/large packages, and below 235 °C for small/thin
packages.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Wave soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit
boards with a high component density, as solder bridging
and non-wetting can present major problems.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
2003 May 1
15
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
WAVE
REFLOW(1)
not suitable suitable
PACKAGE
BGA, HBGA, LFBGA, SQFP, TFBGA
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS
PLCC(3), SO, SOJ
not suitable(2)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(3)(4) suitable
not recommended(5)
suitable
SSOP, TSSOP, VSO
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2003 May 1
16
Philips Semiconductors
Preliminary specification
Inverting Schmitt-triggers
74HC2G14; 74HCT2G14
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury.
Philips Semiconductors customers using or selling these
products for use in such applications do so at their own
risk and agree to fully indemnify Philips Semiconductors
for any damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in
the Characteristics sections of the specification is not
implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or
title under any patent, copyright, or mask work right to
these products, and makes no representations or
warranties that these products are free from patent,
copyright, or mask work right infringement, unless
otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will
be suitable for the specified use without further testing or
modification.
2003 May 1
17
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