74HC3G14 [NXP]
Inverting Schmitt-triggers; 施密特触发器
| 型号： | 74HC3G14 |
| 厂家： | 
NXP |
| 描述： | Inverting Schmitt-triggers |
| 文件： | 总20页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
DATA SHEET
74HC3G14; 74HCT3G14
Inverting Schmitt-triggers
Product specification
2003 Nov 04
Supersedes data of 2002 Jul 23
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
FEATURES
APPLICATIONS
• Wide supply voltage range from 2.0 to 6.0 V
• High noise immunity
• Wave and pulse shapers for highly noisy environments
• Astable multivibrators
• Low power dissipation
• Monostable multivibrators
• Balanced propagation delays
• Unlimited input rise and fall times
• Very small 8 pins package
• Output capability: standard.
DESCRIPTION
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
The 74HC3G/HCT3G14 is a high-speed Si-gate CMOS
device.
The 74HC3G/HCT3G14 provides three inverting buffers
with Schmitt-trigger action. This device is capable of
transforming slowly changing input signals into sharply
defined, jitter-free output signals.
• Specified from −40 to +85 °C and −40 to +125 °C.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.
TYPICAL
SYMBOL
PARAMETER
CONDITIONS
UNIT
ns
HC3G14 HCT3G14
t
PHL/tPLH
propagation delay nA to nY
input capacitance
CL = 50 pF; VCC = 4.5 V 16
2
21
2
CI
pF
pF
CPD
power dissipation capacitance per buffer
notes 1 and 2
10
10
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. For HC3G14 the condition is VI = GND to VCC
.
For HCT3G14 the condition is VI = GND to VCC − 1.5 V.
2003 Nov 04
2
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
FUNCTION TABLE
See note 1.
INPUT
nA
OUTPUT
nY
L
H
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
PACKAGE MATERIAL
TEMPERATURE
PINS
CODE
MARKING
RANGE
74HC3G14DP
74HCT3G14DP
74HC3G14DC
74HCT3G14DC
−40 to +125 °C
−40 to +125 °C
−40 to +125 °C
−40 to +125 °C
8
8
8
8
TSSOP8
TSSOP8
VSSOP8
VSSOP8
plastic
plastic
plastic
plastic
SOT505-1
SOT505-1
SOT765-1
SOT765-1
H14
T14
H14
T14
PINNING
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
7
8
1A
3Y
2A
data input 1A
data output 3Y
data input 2A
ground (0 V)
GND
2Y
data output 2Y
data input 3A
data output 1Y
supply voltage
3A
1Y
VCC
2003 Nov 04
3
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
handbook, halfpage
handbook, halfpage
1
2
3
1A
3Y
2A
1Y
3A
2Y
7
6
5
1A
3Y
1
2
3
4
8
7
6
5
V
CC
1Y
3A
2Y
3G14
2A
GND
MNA739
MNA740
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
1
6
3
7
2
5
handbook, halfpage
A
Y
MNA025
MNA741
Fig.3 IEC logic symbol.
Fig.4 Logic diagram (one driver).
2003 Nov 04
4
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
RECOMMENDED OPERATING CONDITIONS
74HC3G14
74HCT3G14
UNIT
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN.
2.0
TYP. MAX. MIN.
TYP. MAX.
VCC
VI
5.0
−
6.0
4.5
0
5.0
5.5
V
V
V
input voltage
0
VCC
VCC
−
VCC
VCC
VO
output voltage
0
−
0
−
Tamb
operating ambient
temperature
see DC and AC
characteristics per
device
−40
+25
+125 −40
+25
+125 °C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
supply voltage
CONDITIONS
MIN. MAX. UNIT
VCC
IIK
−0.5
−
+7.0
±20
±20
25
V
input diode current
VI < −0.5 V or VI > VCC + 0.5 V; note 1
VO < −0.5 V or VO > VCC + 0.5 V; note 1
−0.5 V < VO < VCC + 0.5 V; note 1
note 1
mA
mA
mA
mA
IOK
IO
output diode current
output source or sink current
VCC or GND current
storage temperature
power dissipation
−
−
ICC
Tstg
PD
−
50
−65
−
+150 °C
300 mW
Tamb = −40 to +125 °C; note 2
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 110 °C the value of PD derates linearly with 8 mW/K.
2003 Nov 04
5
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
DC CHARACTERISTICS
Type 74HC3G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
OTHER
VCC (V)
Tamb = 25 °C
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
IO = −20 µA
IO = −20 µA
IO = −4.0 mA
IO = −5.2 mA
2.0
1.9
2.0
−
−
−
−
−
V
V
V
V
V
4.5
6.0
4.5
6.0
4.4
4.5
5.9
6.0
4.18
5.68
4.32
5.81
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA
2.0
4.5
6.0
4.5
6.0
6.0
−
−
−
−
−
−
−
0
0.1
V
V
V
V
V
IO = 20 µA
0
0.1
IO = 20 µA
0
0.1
IO = 4.0 mA
IO = 5.2 mA
VI = VCC or GND
0.15
0.16
−
0.26
0.26
±0.1
1.0
ILI
input leakage current
µA
µA
ICC
quiescent supply current
VI = VCC or GND; 6.0
IO = 0
−
Tamb = −40 to +85 °C
VOH HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
IO = −20 µA
IO = −20 µA
IO = −4.0 mA
IO = −5.2 mA
VI = VIH or VIL
IO = 20 µA
2.0
4.5
6.0
4.5
6.0
1.9
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
4.4
5.9
4.13
5.63
VOL
LOW-level output voltage
2.0
4.5
6.0
4.5
6.0
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
V
IO = 20 µA
0.1
V
IO = 20 µA
0.1
V
IO = 4.0 mA
IO = 5.2 mA
VI = VCC or GND
0.33
0.33
±1.0
10
V
V
ILI
input leakage current
µA
µA
ICC
quiescent supply current
VI = VCC or GND; 6.0
IO = 0
2003 Nov 04
6
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
TEST CONDITIONS
OTHER VCC (V)
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
Tamb = −40 to +125 °C
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
IO = −20 µA
IO = −20 µA
IO = −4.0 mA
IO = −5.2 mA
2.0
4.5
6.0
4.5
6.0
1.9
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
4.4
5.9
3.7
5.2
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA
2.0
4.5
6.0
4.5
6.0
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.1
0.1
0.1
0.4
0.4
±1.0
20
V
V
V
V
V
IO = 20 µA
IO = 20 µA
IO = 4.0 mA
IO = 5.2 mA
VI = VCC or GND
ILI
input leakage current
µA
µA
ICC
quiescent supply current
VI = VCC or GND; 6.0
IO = 0
2003 Nov 04
7
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
Type 74HCT3G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
OTHER
VCC (V)
Tamb = 25 °C
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
4.5
4.4
4.5
−
−
V
V
IO = −4.0 mA
4.5
4.18
4.32
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA
4.5
4.5
5.5
−
−
−
−
0
0.1
V
V
IO = 4.0 mA
0.15
−
0.26
±0.1
1.0
ILI
input leakage current
VI = VCC or GND
µA
µA
ICC
quiescent supply current
VI = VCC or GND; 5.5
IO = 0
−
∆ICC
additional supply current
per input
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
−
−
300
µA
Tamb = −40 to +85 °C
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
4.5
4.5
4.4
−
−
−
−
V
V
IO = −4.0 mA
4.13
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA
4.5
4.5
5.5
−
−
−
−
−
−
−
−
0.1
V
IO = 4.0 mA
0.33
±1.0
10
V
ILI
input leakage current
VI = VCC or GND
µA
µA
ICC
quiescent supply current
VI = VCC or GND; 5.5
IO = 0
∆ICC
additional supply current
per input
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
−
−
375
µA
Tamb = −40 to +125 °C
VOH
HIGH-level output voltage VI = VIH or VIL
IO = −20 µA
4.5
4.5
4.4
3.7
−
−
−
−
V
V
IO = −4.0 mA
VOL
LOW-level output voltage
VI = VIH or VIL
IO = 20 µA
4.5
4.5
5.5
−
−
−
−
−
−
−
−
0.1
0.4
±1.0
20
V
IO = 4.0 mA
V
ILI
input leakage current
VI = VCC or GND
µA
µA
ICC
quiescent supply current
VI = VCC or GND; 5.5
IO = 0
∆ICC
additional supply current
per input
VI = VCC − 2.1 V;
IO = 0
4.5 to 5.5
−
−
410
µA
2003 Nov 04
8
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
TRANSFER CHARACTERISTICS
Type 74HC3G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
WAVEFORMS
VCC (V)
Tamb = 25 °C
VT+
positive going threshold
voltage
see Figs. 5 and 6 2.0
1.0
1.18
1.5
V
V
V
V
V
V
V
V
V
4.5
2.3
3.0
0.3
1.13
1.5
0.3
0.6
0.8
2.6
3.15
4.2
0.9
2.0
2.6
1.0
1.4
1.7
6.0
3.46
0.6
VT-
VH
negative going threshold
voltage
see Figs. 5 and 6 2.0
4.5
1.47
2.06
0.6
6.0
hysteresis voltage
(VT+ − VT-)
see Figs. 5 and 6 2.0
4.5
6.0
1.13
1.40
Tamb = −40 to +85 °C
VT+
VT-
VH
positive going threshold
voltage
see Figs. 5 and 6 2.0
1.0
2.3
3.0
0.3
1.13
1.5
0.3
0.6
0.8
−
−
−
−
−
−
−
−
−
1.5
3.15
4.2
0.9
2.0
2.6
1.0
1.4
1.7
V
V
V
V
V
V
V
V
V
4.5
6.0
negative going threshold
voltage
see Figs. 5 and 6 2.0
4.5
6.0
hysteresis voltage
(VT+ − VT-)
see Figs. 5 and 6 2.0
4.5
6.0
Tamb = −40 to +125 °C
VT+
positive going threshold
voltage
see Figs. 5 and 6 2.0
1.0
2.3
3.0
0.3
1.13
1.5
0.3
0.6
0.8
−
−
−
−
−
−
−
−
−
1.5
3.15
4.2
0.9
2.0
2.6
1.0
1.4
1.7
V
V
V
V
V
V
V
V
V
4.5
6.0
VT-
VH
negative going threshold
voltage
see Figs. 5 and 6 2.0
4.5
6.0
hysteresis voltage
(VT+ − VT-)
see Figs. 5 and 6 2.0
4.5
6.0
2003 Nov 04
9
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
Type 74HCT3G14
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
TEST CONDITIONS
MIN.
TYP.
MAX.
SYMBOL
PARAMETER
UNIT
OTHER
VCC (V)
Tamb = 25 °C
VT+
positive going threshold
voltage
see Figs. 5 and 6 4.5
1.2
1.58
1.9
V
V
V
V
V
V
5.5
see Figs. 5 and 6 4.5
5.5
1.4
0.5
0.6
0.4
0.4
1.78
0.87
1.11
0.71
0.67
2.1
1.2
1.4
−
VT-
VH
negative going threshold
voltage
hysteresis voltage
(VT+ − VT-)
see Figs. 5 and 6 4.5
5.5
−
Tamb = −40 to +85 °C
VT+
positive going threshold
voltage
see Figs. 5 and 6 4.5
1.2
1.4
0.5
0.6
0.4
0.4
−
−
−
−
−
−
1.9
2.1
1.2
1.4
−
V
V
V
V
V
V
5.5
see Figs. 5 and 6 4.5
5.5
VT-
VH
negative going threshold
voltage
hysteresis voltage
(VT+ − VT-)
see Figs. 5 and 6 4.5
5.5
−
Tamb = −40 to +125 °C
VT+
VT-
VH
positive going threshold
voltage
see Figs. 5 and 6 4.5
1.2
1.4
0.5
0.6
0.4
0.4
−
−
−
−
−
−
1.9
2.1
1.2
1.4
−
V
V
V
V
V
V
5.5
see Figs. 5 and 6 4.5
5.5
negative going threshold
voltage
hysteresis voltage
(VT+ − VT-)
see Figs. 5 and 6 4.5
5.5
−
2003 Nov 04
10
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
TRANSFER CHARACTERISTIC WAVEFORMS
handbook, halfpage
handbook, halfpage
V
V
O
T+
V
I
V
H
V
T−
V
O
MNA027
V
V
I
H
V
V
T+
T−
MNA026
VT+ and VT- are between limits of 20% and 70%.
Fig.6 The definitions of VT+, VT− and VH.
Fig.5 Transfer characteristic.
MNA028
MNA029
100
1.0
handbook, halfpage
handbook, halfpage
I
CC
(mA)
I
CC
0.8
(µA)
0.6
0.4
0.2
0
50
0
0
1.0
2.0
0
2.5
5.0
V (V)
I
V (V)
I
VCC = 2.0 V.
Fig.7 Typical HC3G transfer characteristics.
VCC = 4.5 V.
Fig.8 Typical HC3G transfer characteristics.
2003 Nov 04
11
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
MNA030
MNA031
1.6
2.0
handbook, halfpage
handbook, halfpage
I
CC
I
CC
(mA)
(mA)
1.0
0.8
0
0
0
0
3.0
6.0
2.5
5.0
V (V)
V (V)
I
I
VCC = 6.0 V.
VCC = 4.5 V.
Fig.9 Typical HC3G transfer characteristics.
Fig.10 Typical HCT3G transfer characteristics.
MNA032
3.0
handbook, halfpage
I
CC
(mA)
2.0
1.0
0
0
3.0
6.0
V (V)
I
VCC = 5.5 V.
Fig.11 Typical HCT3G transfer characteristics.
2003 Nov 04
12
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
AC CHARACTERISTICS
Type 74HC3G14
GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF.
TEST CONDITIONS
WAVEFORMS VCC (V)
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
Tamb = 125 °C
tPHL/tPLH
propagation delay nA to nY see Figs 12 and 13 2.0
−
−
−
−
−
−
53
16
13
20
7
125
25
21
75
15
13
ns
4.5
6.0
ns
ns
ns
ns
ns
tTHL/tTLH
output transition time
see Figs 12 and 13 2.0
4.5
6.0
5
Tamb = −40 to +85 °C
tPHL/tPLH
propagation delay nA to nY see Figs 12 and 13 2.0
−
−
−
−
−
−
−
−
−
−
−
−
155
31
26
95
19
16
ns
ns
ns
ns
ns
ns
4.5
6.0
tTHL/tTLH
output transition time
see Figs 12 and 13 2.0
4.5
6.0
Tamb = −40 to +125 °C
tPHL/tPLH
propagation delay nA to nY see Figs 12 and 13 2.0
−
−
−
−
−
−
−
−
−
−
−
−
190
38
ns
ns
ns
ns
ns
ns
4.5
6.0
32
tTHL/tTLH
output transition time
see Figs 12 and 13 2.0
110
22
4.5
6.0
19
2003 Nov 04
13
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
Type 74HCT3G14
GND = 0 V; tr = tf ≤ 6.0 ns; CL = 50 pF.
TEST CONDITIONS
WAVEFORMS VCC (V)
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
Tamb = 25 °C
tPHL/tPLH
propagation delay nA to nY see Figs 12 and 13 4.5
output transition time see Figs 12 and 13 4.5
Tamb = −40 to +85 °C
tPHL/tPLH propagation delay nA to nY see Figs 12 and 13 4.5
tTHL/tTLH output transition time see Figs 12 and 13 4.5
Tamb = −40 to +125 °C
tPHL/tPLH propagation delay nA to nY see Figs 12 and 13 4.5
THL/tTLH
−
−
21
6
32
15
ns
tTHL/tTLH
ns
−
−
−
−
40
19
ns
ns
−
−
−
−
48
22
ns
ns
t
output transition time
see Figs 12 and 13 4.5
AC WAVEFORMS
V
handbook, halfpage
I
V
V
M
nA input
M
GND
t
t
PHL
PLH
V
OH
90%
V
V
nY output
M
M
10%
V
OL
t
t
TLH
MNA722
THL
For HC3G: VM = 50%; VI = GND to VCC
.
For HCT3G: VM = 1.3 V; VI = GND to 3.0 V.
Fig.12 The input (nA) to output (nY) propagation delays and output transition times.
2003 Nov 04
14
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
S1
V
CC
open
V
CC
GND
R
=
L
1 kΩ
V
V
O
I
PULSE
GENERATOR
D.U.T.
C
50 pF
=
L
R
T
MNA742
TEST
PLH/tPHL
PLZ/tPZL
S1
t
t
open
VCC
Definitions for test circuit:
CL = Load capacitance including jig and probe capacitance.
tPHZ/tPZH
GND
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig.13 Load circuitry for switching times.
2003 Nov 04
15
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
APPLICATION INFORMATION
Power dissipation
The slow input rise and fall times cause additional power
dissipation. This can be calculated using the following
formula:
MNA036
200
handbook, halfpage
I
CC(AV)
(µA)
Pad = fi × (tr × ICC(AV) + tf × ICC(AV)) × VCC
150
Where:
positive-going
edge
Pad = additional power dissipation (µW)
fi = input frequency (MHz)
100
50
tr = input rise time between 10% and 90% (ns);
tf = input fall time between 90% and 10% (ns);
ICC(AV) = average additional supply current (µA).
negative-going
edge
Average ICC(AV) differs with positive or negative input
transitions, as shown in Fig.14 and Fig.15.
0
0
2.0
4.0
6.0
V
(V)
CC
Relaxation oscillator
A relaxation oscillator circuit using the HC3G14/HCT3G14
is shown in Fig.16.
Linear change of VI between 0.1VCC to 0.9VCC.
Remark to the application information
All values given are typical unless otherwise specified.
Fig.14 Average ICC for HC Schmitt-trigger devices.
MNA058
200
handbook, halfpage
I
CC(AV)
(µA)
R
handbook, halfpage
150
positive-going
edge
C
100
MNA035
negative-going
50
edge
0
0
2
4
6
V
(V)
CC
1
T
1
For HC3G: f =
≈
--- -----------------------
0.8 × RC
1
T
1
For HCT3G: f =
≈
--- --------------------------
0.67 × RC
Linear change of VI between 0.1VCC to 0.9VCC.
Fig.15 Average ICC for HCT Schmitt-trigger
devices.
Fig.16 Relaxation oscillator using the
HC3G/HCT3G14.
2003 Nov 04
16
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
PACKAGE OUTLINES
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
SOT505-2
D
E
A
X
c
H
v
M
y
A
E
Z
5
8
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
A
A
A
b
c
D
E
e
H
E
L
L
p
UNIT
v
w
y
Z
θ
1
2
3
p
max.
0.15
0.00
0.95
0.75
0.38
0.22
0.18
0.08
3.1
2.9
3.1
2.9
4.1
3.9
0.47
0.33
0.70
0.35
8°
0°
mm
1.1
0.25
0.65
0.5
0.2
0.13
0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-01-16
SOT505-2
- - -
2003 Nov 04
17
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
SOT765-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
8
Q
A
2
A
A
1
(A )
3
pin 1 index
θ
L
p
L
detail X
1
4
e
w
M
b
p
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(2)
(1)
A
A
A
b
c
D
E
e
H
L
L
p
Q
UNIT
v
w
y
Z
θ
1
2
3
p
E
max.
0.15
0.00
0.85
0.60
0.27
0.17
0.23
0.08
2.1
1.9
2.4
2.2
3.2
3.0
0.40
0.15
0.21
0.19
0.4
0.1
8°
0°
mm
1
0.5
0.12
0.4
0.2
0.13
0.1
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
02-06-07
SOT765-1
MO-187
2003 Nov 04
18
Philips Semiconductors
Product specification
Inverting Schmitt-triggers
74HC3G14; 74HCT3G14
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Nov 04
19
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613508/02/pp20
Date of release: 2003 Nov 04
Document order number: 9397 750 10569
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