74HCT7403D,112 [NXP]

74HC(T)7403 - 4-Bit x 64-word FIFO register; 3-state SOP 16-Pin;
74HCT7403D,112
型号: 74HCT7403D,112
厂家: NXP    NXP
描述:

74HC(T)7403 - 4-Bit x 64-word FIFO register; 3-state SOP 16-Pin

先进先出芯片
文件: 总28页 (文件大小:118K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INTEGRATED CIRCUITS  
DATA SHEET  
For a complete data sheet, please also download:  
The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications  
The IC06 74HC/HCT/HCU/HCMOS Logic Package Information  
The IC06 74HC/HCT/HCU/HCMOS Logic Package Outlines  
74HC/HCT7403  
4-Bit x 64-word FIFO register;  
3-state  
September 1993  
Product specification  
Supersedes data of October 1990  
File under Integrated Circuits, IC06  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
FEATURES  
QUICK REFERENCE DATA  
GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns.  
Synchronous or asynchronous  
operation  
TYP.  
SYMBOL  
PHL/tPLH  
fmax  
PARAMETER  
CONDITIONS  
UNIT  
3-state outputs  
HC HCT  
30 MHz (typical) shift-in and  
shift-out rates  
t
propagation delay SO, CL = 15 pF;  
SI to DIR and DOR  
15  
17  
ns  
VCC = 5 V  
Readily expandable in word and bit  
dimensions  
maximum clock  
frequency  
30  
30  
MHz  
Pinning arranged for easy board  
layout: input pins directly opposite  
output pins  
CI  
input capacitance  
3.5  
3.5  
pF  
pF  
CPD  
power dissipation  
capacitance per  
package  
note 1  
475  
490  
Output capability: driver (8 mA)  
ICC category: LSI.  
Note  
1. For HC the condition is VI = GND to VCC  
.
APPLICATIONS  
For HCT the condition is VI = GND to VCC 1.5 V.  
High-speed disc or tape controller  
Communications buffer.  
ORDERING INFORMATION  
PACKAGE  
EXTENDED  
TYPE NUMBER  
GENERAL DESCRIPTION  
PINS  
PIN POSITION  
MATERIAL  
CODE  
The 74HC/HCT7403 are high-speed  
Si-gate CMOS devices. They are  
specified in compliance with JEDEC  
standard no.7A.  
74HC/HCT7403N  
74HC/HCT7403D  
16  
16  
DIL  
plastic  
plastic  
SOT38Z  
SOT162  
SO16L  
The “7403” is an expandable, First-In  
First-Out (FIFO) memory organized  
as 64 words by 4 bits. A guaranteed  
15 MHz data-rate makes it ideal for  
high-speed applications. A higher  
data-rate can be obtained in  
applications where the status flags  
are not used (burst-mode).  
With separate controls for shift-in (SI)  
and shift-out (SO), reading and  
writing operations are completely  
independent, allowing synchronous  
and asynchronous data transfers.  
Additional controls include a  
master-reset input (MR), an output  
enable input (OE) and flags. The  
data-in-ready (DIR) and  
data-out-ready (DOR) flags indicate  
the status of the device.  
September 1993  
2
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
PINNING  
SYMBOL  
OE  
PIN  
DESCRIPTION  
1
2
3
output enable input (active LOW)  
data-in-ready output  
DIR  
handbook, halfpage  
SI  
shift-in input (active HIGH)  
parallel data input  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
V
CC  
OE  
DO to D3  
4, 5,  
6, 7  
DIR  
SO  
SI  
DOR  
GND  
MR  
8
9
ground  
asynchronous master-reset  
input (active LOW)  
D
0
Q
0
7403  
D
1
Q
1
Q3 to Q0  
10,11, data output  
12, 13  
D
2
Q
2
D
3
Q
3
DOR  
SO  
14  
15  
16  
data-out-ready output  
shift-out input (active LOW)  
positive supply voltage  
GND  
MR  
VCC  
MGA672  
Fig.1 Pin configuration.  
handbook, halfpage  
FIFO 64 x 4  
1
handbook, halfpage  
1
2
EN4  
1Z2  
[IR] 3  
14  
[OR] 6  
OE  
CTR  
1 ( /C2)  
D
D
D
D
Q
Q
Q
Q
4
5
6
7
13  
12  
11  
10  
0
1
2
3
0
1
2
3
3
9
<
G1  
G5  
CT 64  
CT = 0  
5
>
CT 0  
15  
5Z6  
4
5
6
7
13  
12  
11  
10  
4
DOR  
DIR  
14  
2
2D  
3
SI  
15  
SO  
MR  
9
MGA674  
MGA676  
Fig.2 Logic symbol.  
Fig.3 IEC logic symbol.  
September 1993  
3
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
DOR  
A
SI  
DOR  
SO  
Q
DOR  
B
B
B
DIR  
SO  
SO  
A
B
SI  
SI  
7403  
FIFO A  
7403  
nB  
4
A
DATA OUTPUT  
FIFO B  
DIR  
DIR  
Q
4
D
nB  
A
nA  
DATA INPUT  
4
D
nA  
MR  
OE  
MR  
OE  
MR  
OE  
MGA679  
Fig.4 Functional diagram.  
FUNCTIONAL DESCRIPTION  
Expanded format (see Fig.17)  
Serial expansion  
A DIR flag indicates the input stage  
status, either empty and ready to  
receive data (DIR = HIGH) or full and  
busy (DIR = LOW). When DIR and SI  
are HIGH, data present at D0 to D3 is  
shifted into the input stage; once  
complete DIR goes LOW. When SI is  
set LOW, data is automatically shifted  
to the output stage or to the last  
empty location. A FIFO which can  
receive data is indicated by DIR set  
HIGH.  
The DOR and DIR signals are used to  
allow the “7403” to be cascaded. Both  
parallel and serial expansion is  
possible.  
Serial expansion is accomplished by:  
tying the data outputs of the first  
device to the data inputs of the  
second device  
Serial expansion is only possible with  
typical devices.  
connecting the DOR pin of the first  
device to the SI pin of the second  
device  
Parallel expansion  
connecting the SO pin of the first  
device to the DIR pin of the second  
device.  
Parallel expansion is accomplished  
by logically ANDing the DOR and DIR  
signals to form a composite signal.  
A DOR flag indicates the output stage  
status, either data available (DOR =  
HIGH) or busy (DOR = LOW). When  
SO and DOR are HIGH, data is  
available at the outputs (Q0 to Q3).  
When SO is set LOW new data may  
be shifted into the output stage, once  
complete DOR is set HIGH.  
September 1993  
4
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
SM1B8  
u
September 1993  
5
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
DC CHARACTERISTICS FOR 74HC  
For the DC characteristics see “74HC/HCT/HCU/HCMOS Logic Family Specifications”, except that VOH and VOL are not  
valid for driver output.  
They are replaced by the values given below.  
Output capability: driver 8 mA  
ICC category: LSI.  
Voltages are referenced to GND (ground = 0 V).  
DC CHARACTERISTICS FOR 74HC  
Tamb (°C)  
TEST CONDITION  
SYMBOL  
PARAMETER  
+25  
40 to +85 40 to +125 UNIT  
VCC  
(V)  
VI  
OTHER  
MIN TYP MAX MIN MAX MIN MAX  
VOH  
HIGH level  
output voltage  
all outputs  
1.9  
4.4  
5.9  
2.0  
4.5  
6
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
V
V
V
2.0 VIH  
4.5 or  
6.0 VIL  
IO = 20 µA  
VOH  
VOL  
VOL  
HIGH level  
output voltage  
driver outputs  
3.98 4.32  
5.48 5.81  
3.84  
5.34  
3.70  
5.20  
V
V
4.5 VIH  
6.0 or  
VIL  
IO = 8 mA  
IO = 10 mA  
LOW level  
output voltage  
all outputs  
0
0
0
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
V
V
2.0 VIH  
4.5 or  
6.0 VIL  
IO = 20 µA  
LOW level  
output voltage  
driver outputs  
0.15 0.26  
0.15 0.26  
0.33  
0.33  
0.40  
0.40  
V
V
4.5 VIH  
6.0 or  
VIL  
IO = 8 mA  
IO = 10 mA  
September 1993  
6
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
AC CHARACTERISTICS FOR 74HC  
GND = 0 V; tr = tf = 6 ns; CL = 50 pF.  
Tamb (°C)  
TEST CONDITION  
SYMBOL PARAMETER  
+25  
40 to +85 40 to +125 UNIT  
VCC  
WAVEFORMS  
(V)  
MIN TYP MAX MIN MAX MIN MAX  
t
PHL/tPLH propagation  
69  
25  
20  
210  
42  
36  
265  
53  
45  
315  
63  
54  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.8  
delay  
MR to DIR,  
DOR  
tPHL  
propagation  
delay  
MR to Qn  
52  
19  
15  
160  
32  
27  
200  
40  
34  
240  
48  
41  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.8  
tPHL/tPLH propagation  
delay  
66  
24  
19  
205  
41  
35  
255  
51  
43  
310  
62  
53  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.6  
SI to DIR  
tPHL/tPLH propagation  
delay  
94  
34  
27  
290  
58  
49  
365  
73  
62  
435  
87  
74  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.9  
SO to DOR  
t
PHL/tPLH propagation  
delay  
11  
4
3
35  
7
6.0  
45  
9
8
55  
11  
9
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.10  
Fig.14  
Fig.10  
DOR to Qn  
tPHL/tPLH propagation  
delay  
105  
38  
30  
325  
65  
55  
406  
81  
69  
488  
98  
83  
ns  
ns  
ns  
2.0  
4.5  
6.0  
SO to Qn  
tPLH  
propagation  
delay/ripple  
through delay  
SI to DOR  
2.2  
0.8  
0.6  
7
1.4  
1.2  
8.8  
1.8  
1.5  
10.5 µs  
2.1  
1.8  
2.0  
4.5  
6.0  
µs  
µs  
tPLH  
propagation  
delay/bubble-up −  
delay  
2.8  
1.0  
0.8  
9
1.8  
1.5  
11.2  
2.2  
1.9  
13.5 µs  
2.0  
4.5  
6.0  
Fig.7  
2.7  
2.3  
µs  
µs  
SO to DIR  
t
t
t
PZH/tPZL  
PHZ/tPLZ  
THL/tTLH  
3-state output  
enable  
OE to Qn  
44  
16  
13  
150  
30  
26  
190  
38  
32  
225  
45  
38  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.16  
Fig.16  
Fig.16  
Fig.6  
3-state output  
disable  
OE to Qn  
50  
18  
14  
150  
30  
26  
190  
38  
33  
225  
45  
38  
ns  
ns  
ns  
2.0  
4.5  
6.0  
output  
transition time  
14  
5
4
60  
12  
10  
75  
15  
13  
90  
18  
15  
ns  
ns  
ns  
2.0  
4.5  
6.0  
tW  
SI pulse  
width  
HIGH or LOW  
35  
7
6.0  
11  
4
3
45  
9
8
55  
11  
9
ns  
ns  
ns  
2.0  
4.5  
6.0  
tW  
SO pulse  
width  
HIGH or LOW  
70  
14  
12  
22  
8
6.0  
90  
18  
15  
105  
21  
18  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.9  
September 1993  
7
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
T
amb (°C)  
TEST CONDITION  
SYMBOL PARAMETER  
+25  
40 to +85 40 to +125 UNIT  
VCC  
WAVEFORMS  
(V)  
MIN TYP MAX MIN MAX MIN MAX  
tW  
DIR pulse width 10  
41  
15  
12  
130  
26  
22  
8
4
3
165  
33  
28  
8
4
3
195  
39  
33  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.7  
HIGH  
5
4
tW  
DOR pulse  
width HIGH  
14  
7
6.0  
52  
19  
15  
160  
32  
27  
12  
6
5
200  
40  
34  
12  
6.0  
5.0  
240  
48  
41  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.10  
tW  
MR pulse width 120  
39  
14  
11  
150  
30  
26  
180  
36  
31  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.8  
LOW  
24  
20  
trem  
tsu  
th  
removal time  
MR to SI  
80  
16  
14  
24  
8
7
100  
20  
17  
120  
24  
20  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.15  
set-up time  
Dn to SI  
8  
4  
3  
36  
13  
10  
6  
3  
3  
6  
3  
3  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.13  
hold time  
Dn to SI  
135  
27  
23  
44  
16  
13  
170  
34  
29  
205  
41  
35  
ns  
ns  
ns  
2.0  
4.5  
6.0  
Fig.13  
fmax  
maximum  
clock pulse  
frequency  
SI, SO burst  
mode  
3.6  
18  
21  
9.9  
30  
36  
2.8  
14  
16  
2.4  
12  
14  
MHz 2.0  
MHz 4.5  
MHz 6.0  
Figs 11 and 12  
fmax  
maximum clock 3.6  
pulse frequency 18  
9.9  
30  
36  
2.8  
14  
16  
2.4  
12  
14  
MHz 2.0  
MHz 4.5  
MHz 6.0  
Figs 6 and 9  
Figs 6 and 9  
SI, SO using  
flags  
21  
fmax  
maximum clock  
7.6  
23  
27  
MHz 2.0  
MHz 4.5  
MHz 6.0  
pulse frequency −  
SI, SO  
cascaded  
September 1993  
8
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
DC CHARACTERISTICS FOR 74HCT  
For the DC characteristics see “74HC/HCT/HCU/HCMOS Logic Family Specifications”, except that VOH and VOL are not  
valid for driver output.  
They are replaced by the values given below.  
Output capability: driver 8 mA.  
I
CC category: LSI.  
Voltages are referenced to GND (ground = 0 V).  
DC CHARACTERISTICS FOR 74HCT  
Tamb (°C)  
40 to +85 40 to +125 UNIT  
TEST CONDITION  
SYMBOL  
PARAMETER  
+25  
MIN TYP MAX MIN MAX MIN MAX  
VCC  
(V)  
VI  
OTHER  
VOH  
HIGH level  
output voltage  
all outputs  
4.4  
4.5  
4.4  
3.84  
4.4  
3.7  
V
V
V
V
4.5 VIH  
IO = 20 µA  
or  
VIL  
VOH  
VOL  
VOL  
HIGH level  
output voltage  
driver outputs  
3.98 4.32  
4.5 VIH  
IO = 8 mA  
IO = 20 µA  
IO = 8 mA  
or  
VIL  
LOW level  
output voltage  
all outputs  
0
0.1  
0.1  
0.33  
0.1  
0.4  
4.5 VIH  
or  
VIL  
LOW level  
0.15 0.26  
4.5 VIH  
output voltage  
driver outputs  
or  
VIL  
Notes to the HCT DC Characteristics  
1. The value of additional quiescent supply current (ICC) for a unit load of 1 is given in the family specifications.  
2. To determine ICC per input, multiply this value by the unit load coefficient shown in the table below.  
UNIT LOAD COEFFICIENT  
INPUT  
UNIT LOAD COEFFICIENT  
OE  
SI  
1
1.5  
0.75  
1.5  
1.5  
Dn  
MR  
SO  
September 1993  
9
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
AC CHARACTERISTICS FOR 74HCT  
GND = 0 V; tr = tf = 6 ns; CL = 50 pF  
Tamb (°C)  
TEST CONDITION  
SYMBOL PARAMETER  
25  
40 to +85 40 to +125 UNIT  
VCC  
WAVEFORMS  
(V)  
MIN TYP MAX MIN MAX MIN MAX  
t
PHL/tPLH propagation  
30  
51  
53  
63  
ns  
4.5  
Fig.8  
delay  
MR to DIR,  
DOR  
tPHL  
propagation  
delay  
MR to Qn  
22  
25  
36  
42  
7
38  
43  
61  
72  
12  
1.4  
48  
57  
ns  
ns  
ns  
ns  
ns  
µs  
4.5  
4.5  
4.5  
4.5  
4.5  
4.5  
Fig.8  
tPHL/tPLH propagation  
delay  
54  
65  
Fig.6  
SI to DIR  
tPHL/tPLH propagation  
delay  
76  
92  
Fig.9  
SO to DOR  
t
PHL/tPLH propagation  
delay  
90  
108  
18  
Fig.14  
Fig.10  
Fig.10  
SO to Qn  
tPHL/tPLH propagation  
delay  
15  
DOR to Qn  
tPLH  
propagation  
delay/ripple  
through delay  
SI to DOR  
0.8  
1.75  
2.1  
tPLH  
propagation  
delay/bubble-up  
delay  
1
1.8  
2.25  
2.7  
µs  
4.5  
Fig.7  
SO to DIR  
t
t
t
PZH/tPZL  
PHZ/tPLZ  
THL/tTLH  
3-state output  
enable time  
OE to Qn  
16  
19  
30  
30  
38  
38  
45  
45  
ns  
ns  
4.5  
4.5  
Fig.16  
Fig.16  
3-state output  
disable time  
OE to Qn  
outputtransition  
time  
5
12  
15  
18  
ns  
ns  
ns  
ns  
4.5  
4.5  
4.5  
4.5  
Fig.16  
Fig.6  
Fig.9  
Fig.7  
tW  
tW  
tW  
SI pulse width  
HIGH or LOW  
9
5
6
8
SO pulse width 14  
HIGH or LOW  
8
18  
4
21  
4
DIR pulse width 5  
HIGH  
17  
29  
36  
44  
September 1993  
10  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
Tamb (°C)  
TEST CONDITION  
SYMBOL PARAMETER  
25  
40 to +85 40 to +125 UNIT  
VCC  
WAVEFORMS  
(V)  
MIN TYP MAX MIN MAX MIN MAX  
tW  
DOR pulse  
width  
7
21  
36  
6.0  
45  
6.0  
54  
ns  
4.5  
Fig.10  
HIGH  
tW  
MR pulse width 26  
LOW  
15  
10  
16  
18  
30  
33  
23  
4  
38  
14  
39  
27  
4  
45  
12  
ns  
ns  
ns  
ns  
4.5  
4.5  
4.5  
4.5  
Fig.8  
trem  
tsu  
removal time  
MR to SI  
18  
5  
30  
18  
Fig.15  
set-up time  
Dn to SI  
Fig.13  
th  
hold time  
Dn to SI  
Fig.13  
fmax  
maximum  
clock pulse  
frequency  
SI, SO burst  
mode  
MHz 4.5  
MHz 4.5  
MHz 4.5  
Figs 11 and 12  
fmax  
maximum  
clock pulse  
frequency  
SI, SO using  
flags  
18  
30  
23  
14  
12  
Figs 6 and 9  
Figs 6 and 9  
fmax  
maximum  
clock pulse  
frequency  
SI, SO  
cascaded  
September 1993  
11  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
AC WAVEFORMS  
Shifting in sequence FIFO empty to FIFO full  
1st word  
2nd word  
64th word  
1/f max  
(1)  
(1)  
V
M
V
2
SI INPUT  
M
4
6
t
W
t
PHL  
t
PLH  
1
5
DIR OUTPUT  
3
7
D
INPUT  
n
MGA659  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT: VM = 1.3 V; VI = GND to 3 V.  
Fig.6 Waveforms showing the SI input to DIR output propagation delay, the SI pulse width and SI maximum  
pulse frequency.  
Notes to Fig.6  
1. DIR initially HIGH; FIFO is prepared for valid data  
2. SI set HIGH; data loaded into input stage  
3. DIR goes LOW, input stage “busy”  
4. SI set LOW; data from first location “ripple through”  
5. DIR goes HIGH, status flag indicates FIFO prepared for additional data  
6. Repeat process to load 2nd word through to 64th word into FIFO  
DIR remains LOW; with attempt to shift into full FIFO, no data transfer occurs.  
September 1993  
12  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
With FIFO full; SI held HIGH in anticipation of empty location  
(1)  
2
SO INPUT  
SI INPUT  
V
M
(1)  
1
V
M
5
t
t
PLH  
W
bubble - up  
delay  
(1)  
DIR OUTPUT  
V
M
3
4
MGA660  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT: VM = 1.3 V; VI = GND to 3 V.  
Fig.7 Waveforms showing bubble-up delay, SO input to DIR output and DIR output pulse width.  
Notes to Fig.7  
1. FIFO is initially full, shift-in is held HIGH  
2. SO pulse; data in the output stage is unloaded, “bubble-up” process of empty location begins  
3. DIR HIGH; when empty location reaches input stage, flag indicates FIFO is prepared for data input  
4. DIR returns to LOW; data shift-in to empty location is complete, FIFO is full again  
5. SI set LOW; necessary to complete shift-in process, DIR remains LOW, because FIFO is full.  
September 1993  
13  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
Master reset applied with FIFO full  
handbook, halfpage  
(1)  
MR INPUT  
2
V
M
t
W
t
t
PLH  
PHL  
(1)  
V
3
DIR OUTPUT  
DOR OUTPUT  
M
M
1
4
(1)  
V
t
PHL  
Q
OUTPUT  
5
n
MGA668  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT: VM = 1.3 V; VI = GND to 3 V.  
Fig.8 Waveforms showing the MR input to DIR, DOR and Qn output propagation delays and the MR pulse width.  
Notes to Fig.8  
1. DIR LOW, output ready HIGH; assume FIFO is full  
2. MR pulse LOW; clears FIFO  
3. DIR goes HIGH; flag indicates input prepared for valid data  
4. DOR goes LOW; flag indicates FIFO empty  
5. Qn outputs go LOW (only last bit will be reset).  
September 1993  
14  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
1st SO pulse  
1/f  
2nd SO pulse  
64th SO pulse  
max  
V
(1)  
(1)  
V
2
SO INPUT  
M
M
4
6
t
W
t
PHL  
t
PLH  
1
5
(1)  
DOR OUTPUT  
V
M
3
7
Q
OUTPUT  
1st word  
2nd word  
64th word  
n
MGA661  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT: VM = 1.3 V; VI = GND to 3 V.  
Fig.9 Waveforms showing the SO input to DOR output propagation delay. The SO pulse widths and maximum  
pulse frequency.  
Notes to Fig.9  
1. DOR HIGH; no data transfer in progress, valid data is present at output stage  
2. SO set HIGH; results in DOR going LOW  
3. DOR goes LOW; output stage “busy”  
4. SO set LOW; data in the input stage is unloaded, and new data replaces it as empty location “bubbles-up” to input  
stage  
5. DOR goes HIGH; transfer process completed, valid data present at output after the specified propagation delay  
6. Repeat process to unload the 3rd through to the 64th word from FIFO  
7. DOR remains LOW; FIFO is empty.  
September 1993  
15  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
With FIFO empty; SO is held HIGH in anticipation  
(1)  
2
SI INPUT  
V
M
(1)  
1
6
SO INPUT  
DOR OUTPUT  
V
M
t
t
PLH  
W
ripple through  
delay  
(1)  
4
3
5
V
M
t
t
PHL PLH  
Q
OUTPUT  
n
MGA658  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT: VM = 1.3 V; VI = GND to 3 V.  
Fig.10 Waveforms showing ripple through delay SI input to DOR output, DOR output pulse width and propagation  
delay from the DOR pulse to the Qn output.  
Notes to Fig.10  
1. FIFO is initially empty, SO is held HIGH  
2. SI pulse; loads data into FIFO and initiates ripple through process  
3. DOR flag signals the arrival of valid data at the output stage  
4. Output transition; data arrives at output stage after the specified propagation delay between the rising edge of the  
DOR pulse to the Qn output  
5. DOR goes LOW; data shift-out is complete, FIFO is empty again  
6. SO set LOW; necessary to complete shift-out process. DOR remains LOW, because FIFO is empty.  
September 1993  
16  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
Shift-in operation; high-speed burst mode  
1/f  
max  
t
W
(1)  
V
SI INPUT  
M
D
INPUT  
n
DIR OUTPUT  
MGA662  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT: VM = 1.3 V; VI = GND to 3 V.  
Fig.11 Waveforms showing SI minimum pulse width and maximum pulse frequency, in high-speed shift-in burst  
mode.  
Note to Fig.11  
In the high-speed mode, the burst-in rate is determined by the minimum shift-in HIGH and shift-in LOW specifications.  
The DIR status flag is a don't care condition, and a shift-in pulse can be applied regardless of the flag. A SI pulse which  
would overflow the storage capacity of the FIFO is ignored.  
September 1993  
17  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
Shift-out operation; high-speed burst mode  
1/f  
max  
t
W
(1)  
V
SO INPUT  
M
Q
OUTPUT  
n
DOR OUTPUT  
MGA663  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT: VM = 1.3 V; VI = GND to 3 V.  
Fig.12 Waveforms showing SO minimum pulse width and maximum pulse frequency, in high-speed shift-out  
burst mode.  
Note to Fig.12  
In the high-speed mode, the burst-out rate is determined by the minimum shift-out HIGH and shift-out LOW  
specifications. The DOR flag is a don't care condition and an SO pulse can be applied without regard to the flag.  
September 1993  
18  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
(1)  
D
INPUT  
V
t
n
M
t
su  
su  
t
t
h
h
(1)  
V
SI INPUT  
M
MGA657  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT: VM = 1.3 V; VI = GND to 3 V.  
The shaded areas indicate when the input is permitted to change for predictable output performance.  
Fig.13 Waveforms showing hold and set-up times for Dn input to SI input.  
(1)  
V
SO INPUT  
M
t
t
PHL  
PLH  
(1)  
V
Q
OUTPUT  
M
n
t
t
MGA664  
TLH  
THL  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT: VM = 1.3 V; VI = GND to 3 V.  
Fig.14 Waveforms showing SO input to Qn output propagation delays and output transition time.  
September 1993  
19  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
handbook, halfpage  
MR INPUT  
(1)  
V
M
t
rem  
(1)  
SI INPUT  
V
M
MGA665  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT: VM = 1.3 V; VI = GND to 3 V.  
Fig.15 Waveform showing the MR input to SI input removal time.  
t
t
r
f
90 %  
(1)  
OE INPUT  
V
M
10 %  
t
t
PLZ  
PZL  
Q
OUTPUT  
n
(1)  
M
LOW - to - OFF  
OFF - to - LOW  
V
M
10 %  
t
t
PZH  
PHZ  
90 %  
Q
OUTPUT  
n
(1)  
HIGH - to - OFF  
OFF - to - HIGH  
V
outputs  
enabled  
outputs  
disabled  
outputs  
enabled  
MGA656  
(1) HC : VM = 50%; VI = GND to VCC  
.
HCT: VM = 1.3 V; VI = GND to 3 V.  
Fig.16 Waveforms showing the 3-state enable and disable times for input OE.  
September 1993  
20  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
APPLICATION INFORMATION  
OE  
DOR  
SI  
SI OE DOR  
SI OE DOR  
Q
Q
D
D
D
D
D
D
D
D
0
1
2
3
0
1
2
3
0
1
2
3
0
Q
Q
Q
Q
Q
Q
1
2
3
7403  
7403  
DIR MR SO  
DIR MR SO  
8-bit  
data  
8-bit  
data  
SI OE DOR  
Q
SI OE DOR  
Q
D
D
D
D
D
D
D
D
0
1
2
3
0
1
2
3
0
0
1
2
3
Q
Q
Q
Q
Q
Q
1
2
3
7403  
7403  
DIR MR SO  
DIR MR SO  
DIR  
MR  
SO  
MGA684  
Fig.17 Expanded FIFO (parallel and serial) for increased word length; 8 bits wide x 64 n-bits.  
September 1993  
21  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
4
D
Q
4
DATA INPUT  
DATA OUTPUT  
n
n
COMPOSITE  
DIR  
COMPOSITE  
DOR  
DIR  
DOR  
7403  
FLAG  
FLAG  
SO  
OE  
SO  
OE  
SI  
MR  
SI  
MR  
DIR  
SI  
DOR  
SO  
7403  
MR  
OE  
DATA INPUT  
4
4
DATA OUTPUT  
Q
n
D
n
MGA678  
Fig.18 Expanded FIFO for increased word length; 64 words x 10 bits.  
Note to Fig.18  
The “7403” is easily expanded to increase word length. Composite DIR and DOR flags are formed with the addition of  
an AND gate. The basic operation and timing are identical to a single FIFO, with the exception of an added gate delay  
on the flags.  
September 1993  
22  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
4
Q
4
D
n
n
DIR  
DOR  
7403  
Q
D
D
Q
SO  
OE  
SI  
74  
74  
composite  
DIR  
composite  
DOR  
CP  
CP  
MR  
Q
Q
Q
Q
D
D
DIR  
SI  
DOR  
SO  
CP  
CP  
SI  
SO  
OE  
Q
Q
R
R
7403  
MR  
MR  
OE  
MGA683  
4
4
D
Q
n
n
Fig.19 Expanded FIFO for increased word length.  
Note to Fig.19  
This circuit is only required if the SI input is constantly held HIGH, when the FIFO is empty and the automatic shift-in  
cycles are started or if SO output is constantly held HIGH, when the FIFO is full and the automatic shift-out cycles are  
started (see Figs 7 and 10).  
September 1993  
23  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
and DnB are satisfied by the DORA  
pulse width and the timing between  
the rising edge of DORA and QnA  
After a second ripple through delay,  
data arrives at the output of FIFOB.  
for FIFOA. One word is transferred  
from the output of FIFOA to the input  
of FIFOB. The requirements of the  
SOA pulse for FIFOA is satisfied by  
the pulse width of DORB. After a  
second bubble-up delay an empty  
space arrives at DnA, at which time  
DIRA goes HIGH. Figure 23 shows  
the waveforms at all external nodes of  
both FIFOs during a complete shift-in  
and shift-out sequence.  
Expanded format  
Figure 20 shows two cascaded FIFOs  
providing a capacity of 128 words x  
4 bits. Figure 21 shows the signals on  
the nodes of both FIFOs after the  
application of a SI pulse, when both  
FIFOs are initially empty. After a  
ripple through delay, data arrives at  
the output of FIFOA. Due to SOA  
being HIGH, a DORA pulse is  
.
Figure 22 shows the signals on the  
nodes of both FIFOs after the  
application of a SOB pulse, when both  
FIFOs are initially full. After a  
bubble-up delay a DIRB pulse is  
generated, which acts as a SOA pulse  
generated. The requirements of SIB  
DOR  
SO  
SI  
DOR  
SO  
Q
DOR  
SO  
B
B
B
A
A
DIR  
B
SI  
SI  
7403  
FIFO A  
7403  
nB  
4
A
DATA OUTPUT  
FIFO B  
DIR  
DIR  
Q
4
D
nB  
A
nA  
DATA INPUT  
4
D
nA  
MR  
OE  
MR  
OE  
MR  
OE  
MGA679  
Fig.20 Cascading for increased word capacity; 128 words x 4 bits.  
Note to Fig.20  
The “7403” is easily cascaded to increase word capacity without any external circuitry. In cascaded format, all necessary  
communications are handled by the FIFOs. Figures 21 and 22 demonstrate the intercommunication timing between  
FIFOA and FIFOB. Figure 23 provides an overview of pulses and timing of two cascaded FIFOs, when shifted full and  
shifted empty again.  
September 1993  
24  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
(1)  
DIR  
SI  
V
A
M
(1)  
2
V
A
M
ripple through  
delay  
4
(1)  
SI  
DOR  
V
5
B
A
M
(1)  
SO  
1
A
DIR  
Q
V
6
B
M
D
3
nA nB  
ripple through  
delay  
(1)  
DOR  
7
V
B
M
Q
nB  
MGA666  
Fig.21 FIFO to FIFO communication; input timing under empty condition.  
Notes to Fig.21  
1. FIFOA and FIFOB initially empty, SOA held HIGH in anticipation of data  
2. Load one word into FIFOA; SI pulse applied, results in DIR pulse  
3. Data-out A/data-in B transition; valid data arrives at FIFOA output stage after a specified delay of the DOR flag,  
meeting data input set-up requirements of FIFOB  
4. DORA and SIB pulse HIGH; (ripple through delay after SIA LOW) data is unloaded from FIFOA as a result of the data  
output ready pulse, data is shifted into FIFOB  
5. DIRB and SOA go LOW; flag indicates input stage of FIFOB is busy, shift-out of FIFOA is complete  
6. DIRB and SOA go HIGH automatically; the input stage of FIFOB is again able to receive data, SO is held HIGH in  
anticipation of additional data  
7. DORB goes HIGH; (ripple through delay after SIB LOW) valid data is present one propagation delay later at the FIFOB  
output stage.  
September 1993  
25  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
(1)  
DOR  
V
M
B
(1)  
2
SO  
B
V
M
bubble - up  
delay  
3
(1)  
SO  
SI  
DIR  
V
4
B
A
M
(1)  
1
5
DOR  
Q
V
M
B
A
D
nA nB  
bubble - up  
delay  
6
(1)  
DIR  
V
A
M
MGA667  
Fig.22 FIFO to FIFO communication; output timing under full condition.  
Notes to Fig.22  
1. FIFOA and FIFOB initially full, SIB held HIGH in anticipation of shifting in new data as an empty location bubbles-up  
2. Unload one word from FIFOB; SO pulse applied, results in DOR pulse  
3. DIRB and SOA pulse HIGH; (bubble-up delay after SOB LOW) data is loaded into FIFOB as a result of the DIR pulse,  
data is shifted out of FIFOA  
4. DORA and SIB go LOW; flag indicates the output stage of FIFOA is busy, shift-in to FIFOB is complete  
5. DORA and SIB go HIGH; flag indicates valid data is again available at FIFOA output stage, SIB is held HIGH, awaiting  
bubble-up of empty location  
6. DIRA goes HIGH; (bubble-up delay after SOA LOW) an empty location is present at input stage of FIFOA.  
September 1993  
26  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
sequence 1  
sequence 2  
sequence 3  
sequence 4  
(8)  
sequence 5  
sequence 6  
SO INPUT  
B
(3) (4)  
(14)  
DOR OUTPUT  
B
Q
OUTPUT  
nB  
(5)  
(13)  
(12)  
DIR OUTPUT  
B
(9)  
(2)  
(6)  
DOR OUTPUT  
A
Q
OUTPUT  
nA  
(10)  
(7)  
DIR OUTPUT  
A
(1)  
(11)  
SI INPUT  
A
D
INPUT  
nA  
MR INPUT  
MGA687  
Fig.23 Waveforms showing the functionality and intercommunication between two FIFOs (refer to Fig.18).  
Note to Fig.23  
Sequence 1 (both FIFOS empty, starting SHIFT-IN process)  
After a MR pulse has been applied FIFOA and FIFOB are empty. The DOR flags of FIFOA and FIFOB go LOW due to no  
valid data being present at the outputs. The DIR flags are set HIGH due to the FIFOs being ready to accept data. SOB  
is held HIGH and two SIA pulses are applied (1). These pulses allow two data words to ripple through to the output stage  
of FIFOA and to the input stage of FIFOB (2). When data arrives at the output of FIFOB, a DORB pulse is generated (3).  
When SOB goes LOW, the first bit is shifted out and a second bit ripples through to the output after which DORB goes  
HIGH (4).  
September 1993  
27  
Philips Semiconductors  
Product specification  
4-Bit x 64-word FIFO register; 3-state  
74HC/HCT7403  
Sequence 2 (FIFOB runs full)  
After the MR pulse, a series of 64 SI pulses are applied. When 64 words are shifted in, DIRB remains LOW due to FIFOB  
being full (5). DORA goes LOW due to FIFOA being empty.  
Sequence 3 (FIFOA runs full)  
When 65 words are shifted in, DORA remains HIGH due to valid data remaining at the output of FIFOA. QnA remains  
HIGH, being the polarity of the 65th data word (6). After the 128th SI pulse, DIR remains LOW and both FIFOs are full  
(7). Additional pulses have no effect.  
Sequence 4 (both FIFOs full, starting SHIFT-OUT process)  
SIA is held HIGH and two SOB pulses are applied (8). These pulses shift out two words and thus allow two empty  
locations to bubble-up to the input stage of FIFOB, and proceed to FIFOA (9). When the first empty location arrives at the  
input of FIFOA, a DIRA pulse is generated (10) and a new word is shifted into FIFOA. SIA is made LOW and now the  
second empty location reaches the input stage of FIFOA, after which DIRA remains HIGH (11).  
Sequence 5 (FIFOA runs empty)  
At the start of sequence 5 FIFOA contains 63 valid words due to two words being shifted out and one word being shifted  
in, in sequence 4. An additional series of SOB pulses are applied. After 63 SOB pulses, all words from FIFOA are shifted  
into FIFOB. DORA remains LOW (12).  
Sequence 6 (FIFOB runs empty)  
After the next SOB pulse, DIRB remains HIGH due to the input stage of FIFOB being empty. After another 63 SOB pulses,  
DORB remains LOW due to both FIFOs being empty (14). Additional SOB pulses have no effect. The last word remains  
available at the output Qn.  
PACKAGE OUTLINES  
See “74HC/HCT/HCU/HCMOS Logic Package Outlines”.  
September 1993  
28  

相关型号:

74HCT7403D,518

74HC(T)7403 - 4-Bit x 64-word FIFO register; 3-state SOP 16-Pin
NXP

74HCT7403D-Q100,51

74HC(T)7403-Q100 - 4-bit x 64-word FIFO register; 3-state SOP 16-Pin
NXP

74HCT7403D-T

x4 Asynchronous FIFO
ETC

74HCT7403DB-T

IC 64 X 4 OTHER FIFO, PDSO16, FIFO
NXP

74HCT7403N

4-Bit x 64-word FIFO register; 3-state
NXP

74HCT7403N

FIFO, 64X4, 108ns, Asynchronous, CMOS, PDIP16,
PHILIPS

74HCT7403N,112

74HC(T)7403 - 4-Bit x 64-word FIFO register; 3-state DIP 16-Pin
NXP

74HCT7403PW

IC 64 X 4 OTHER FIFO, PDSO16, FIFO
NXP

74HCT7403PW-T

暂无描述
NXP

74HCT7404

5-Bit x 64-word FIFO register; 3-state
NXP

74HCT7404D

5-Bit x 64-word FIFO register; 3-state
NXP

74HCT7404D-T

IC 64 X 5 OTHER FIFO, 108 ns, PDSO20, FIFO
NXP