74LVC1G10GS [NXP]
LVC/LCX/Z SERIES, 3-INPUT NAND GATE, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, SON-6;型号: | 74LVC1G10GS |
厂家: | NXP |
描述: | LVC/LCX/Z SERIES, 3-INPUT NAND GATE, PDSO6, 1 X 1 MM, 0.35 MM HEIGHT, SOT-1202, SON-6 输入元件 光电二极管 |
文件: | 总17页 (文件大小:155K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
74LVC1G10
Single 3-input NAND gate
Rev. 4 — 10 September 2014
Product data sheet
1. General description
The 74LVC1G10 provides a low-power, low-voltage single 3-input NAND gate.
The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of
this device in a mixed 3.3 V and 5 V environment.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
time.
This device is fully specified for partial power-down applications using IOFF
.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
2. Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V).
24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101E exceeds 1000 V
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package (TSOP6); 6 leads SOT457
Version
74LVC1G10GW
74LVC1G10GV
74LVC1G10GM
40 C to +125 C
40 C to +125 C
40 C to +125 C
SC-88
SC-74
XSON6
SOT363
plastic extremely thin small outline package;
SOT886
SOT891
SOT1115
SOT1202
no leads; 6 terminals; body 1 1.45 0.5 mm
74LVC1G10GF
74LVC1G10GN
74LVC1G10GS
40 C to +125 C
40 C to +125 C
40 C to +125 C
XSON6
XSON6
XSON6
plastic extremely thin small outline package;
no leads; 6 terminals; body 1 1 0.5 mm
extremely thin small outline package; no leads;
6 terminals; body 0.9 1.0 0.35 mm
extremely thin small outline package; no leads;
6 terminals; body 1.0 1.0 0.35 mm
4. Marking
Table 2.
Marking
Type number
Marking code[1]
74LVC1G10GW
74LVC1G10GV
74LVC1G10GM
74LVC1G10GF
74LVC1G10GN
74LVC1G10GS
YM
YM
YM
YM
YM
YM
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
1
A
B
C
A
3
6
4
B
C
Y
1
3
6
Y
&
4
001aag688
001aag686
001aag687
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
2 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
6. Pinning information
6.1 Pinning
74LVC1G10
74LVC1G10
A
GND
B
1
2
3
6
5
4
C
74LVC1G10
1
2
3
6
5
4
A
GND
B
C
A
GND
B
1
2
3
6
5
4
C
V
CC
V
CC
V
CC
Y
Y
Y
001aag690
001aag691
Transparent top view
Transparent top view
001aag689
Fig 4. Pin configuration SOT363
and SOT457
Fig 5. Pin configuration SOT886
Fig 6. Pin configuration SOT891,
SOT1115 and SOT1202
6.2 Pin description
Table 3.
Pin description
Pin
Symbol
Description
data input
A
1
2
3
4
5
6
GND
B
ground (0 V)
data input
Y
data output
supply voltage
data input
VCC
C
7. Functional description
Table 4.
Function table[1]
Input
Output
A
H
L
B
H
X
L
C
H
X
X
L
Y
L
H
H
H
X
X
X
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care.
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
3 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
VCC
IIK
Parameter
Conditions
Min
0.5
50
0.5
-
Max
+6.5
-
Unit
V
supply voltage
input clamping current
input voltage
VI < 0 V
mA
V
[1]
VI
+6.5
50
VCC + 0.5
+6.5
50
100
-
IOK
output clamping current
output voltage
VO > VCC or VO < 0 V
Active mode
mA
V
[1][2]
[1][2]
VO
0.5
0.5
-
Power-down mode
VO = 0 V to VCC
V
IO
output current
mA
mA
mA
mW
C
ICC
IGND
Ptot
Tstg
supply current
-
ground current
100
-
[3]
total power dissipation
storage temperature
Tamb = 40 C to +125 C
250
+150
65
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
[3] For SC-88 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 package: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
9. Recommended operating conditions
Table 6.
Symbol
VCC
Recommended operating conditions
Parameter
Conditions
Min
Typ
Max
5.5
Unit
V
supply voltage
input voltage
output voltage
1.65
-
-
-
-
-
-
-
VI
0
5.5
V
VO
Active mode
0
VCC
5.5
V
Power-down mode; VCC = 0 V
0
V
Tamb
ambient temperature
40
+125
20
C
ns/V
ns/V
t/V
input transition rise and fall rate VCC = 1.65 V to 2.7 V
VCC = 2.7 V to 5.5 V
-
-
10
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
4 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 40 C to +85 C
40 C to +125 C Unit
Min
Typ[1]
Max
Min
Max
VIH
HIGH-level input VCC = 1.65 V to 1.95 V
0.65VCC
-
-
-
-
-
-
-
-
-
0.65VCC
-
V
V
V
V
V
V
V
V
voltage
VCC = 2.3 V to 2.7 V
1.7
-
1.7
-
VCC = 2.7 V to 3.6 V
VCC = 4.5 V to 5.5 V
2.0
-
-
2.0
-
-
0.7VCC
0.7VCC
VIL
LOW-level input VCC = 1.65 V to 1.95 V
-
-
-
-
0.35VCC
0.7
-
-
-
-
0.35VCC
0.7
voltage
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 4.5 V to 5.5 V
0.8
0.8
0.3VCC
0.3VCC
VOH
HIGH-level
VI = VIH or VIL
output voltage
IO = 100 A;
VCC 0.1
-
-
VCC 0.1
-
V
VCC = 1.65 V to 5.5 V
IO = 4 mA; VCC = 1.65 V
IO = 8 mA; VCC = 2.3 V
IO = 12 mA; VCC = 2.7 V
IO = 24 mA; VCC = 3.0 V
IO = 32 mA; VCC = 4.5 V
VI = VIH or VIL
1.2
1.9
2.2
2.3
3.8
-
-
-
-
-
-
-
-
-
-
0.95
1.7
1.9
2.0
3.4
-
-
-
-
-
V
V
V
V
V
VOL
LOW-level
output voltage
IO = 100 A;
-
-
0.10
-
0.10
V
VCC = 1.65 V to 5.5 V
IO = 4 mA; VCC = 1.65 V
IO = 8 mA; VCC = 2.3 V
IO = 12 mA; VCC = 2.7 V
IO = 24 mA; VCC = 3.0 V
IO = 32 mA; VCC = 4.5 V
-
-
-
-
-
-
-
0.45
0.30
0.40
0.55
0.55
5
-
-
-
-
-
-
0.70
0.45
0.60
0.80
0.80
100
V
-
V
-
V
-
-
V
V
II
input leakage
current
VI = 5.5 V or GND;
VCC = 0 V to 5.5 V
0.1
A
IOFF
ICC
ICC
CI
power-off
leakage current
VI or VO = 5.5 V; VCC = 0 V
-
-
-
-
0.1
0.1
5
10
10
500
-
-
-
-
-
200
200
5000
-
A
A
A
pF
supply current
VI = 5.5 V or GND; IO = 0 A;
VCC = 1.65 V to 5.5 V
additional supply VI = VCC 0.6 V; IO = 0 A;
current
VCC = 2.3 V to 5.5 V; per pin
input
VCC = 3.3 V;
3
capacitance
VI = GND to VCC
[1] All typical values are measured at Tamb = 25 C.
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
5 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8.
Symbol Parameter Conditions 40 C to +85 C
40 C to +125 C Unit
Min
Typ[1]
Max
Min
Max
[2]
tpd
propagation delay A, B and C to Y; see Figure 7
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
1.5
1.0
1.0
1.0
1.0
-
4.7
3.0
3.0
2.6
1.9
12
18.0
6.5
6.0
5.0
3.6
-
1.5
1.0
1.0
1.0
1.0
-
21.5
7.8
7.5
6.2
4.4
-
ns
ns
ns
ns
ns
pF
VCC = 2.7 V
VCC = 3.0 V to 3.6 V
VCC = 4.5 V to 5.5 V
[3]
CPD
power dissipation VI = GND to VCC; VCC = 3.3 V
capacitance
[1] Typical values are measured at Tamb = 25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLH and tPHL
.
[3] CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of the outputs.
12. Waveforms
V
I
A, B, C,
input
V
M
GND
t
t
PHL
PLH
V
OH
V
Y output
M
V
OL
001aag692
Measurement points are given in Table 9.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 7. The input (A, B, C) to output (Y) propagation delays
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
6 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
Table 9.
Measurement points
Supply voltage
VCC
Input
VM
Output
VM
1.65 V to 1.95 V
2.3 V to 2.7 V
2.7 V
0.5VCC
0.5VCC
1.5 V
1.5 V
0.5VCC
0.5VCC
0.5VCC
1.5 V
3.0 V to 3.6 V
4.5 V to 5.5 V
1.5 V
0.5VCC
9
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,
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7
&
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Test data is given in Table 10.
Definitions for test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
VEXT = External voltage for measuring switching times.
Fig 8. Test circuit for measuring switching times
Table 10. Test data
Supply voltage
VCC
Input
VI
Load
CL
VEXT
tr = tf
RL
tPLH, tPHL
open
1.65 V to 1.95 V
2.3 V to 2.7 V
2.7 V
VCC
VCC
2.7 V
2.7 V
VCC
2.0 ns
2.0 ns
2.5 ns
2.5 ns
2.5 ns
30 pF
30 pF
50 pF
50 pF
50 pF
1 k
500
500
500
500
open
open
3.0 V to 3.6 V
4.5 V to 5.5 V
open
open
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
7 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
13. Package outline
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Fig 9. Package outline SOT363 (SC-88)
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
8 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
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Fig 10. Package outline SOT457 (SC-74)
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
9 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
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Fig 11. Package outline SOT886 (XSON6)
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
10 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
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All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
11 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
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74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
12 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
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74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
13 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
14. Abbreviations
Table 11. Abbreviations
Acronym
CDM
CMOS
DUT
Description
Charged Device Model
Complementary Metal Oxide Semiconductor
Device Under Test
ESD
ElectroStatic Discharge
Human Body Model
HBM
MM
Machine Model
TTL
Transistor-Transistor Logic
15. Revision history
Table 12. Revision history
Document ID
74LVC1G10 v.4
Modifications:
74LVC1G10 v.3
74LVC1G10 v.2
74LVC1G10 v.1
Release date
Data sheet status
Change notice
Supersedes
20140910
Product data sheet
-
74LVC1G10 v.3
• Package outline drawing of SOT886 (Figure 11) modified.
20111208
20101021
20071002
Product data sheet
Product data sheet
Product data sheet
-
-
-
74LVC1G10 v.2
74LVC1G10 v.1
-
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
14 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
16.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
15 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
74LVC1G10
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 4 — 10 September 2014
16 of 17
74LVC1G10
NXP Semiconductors
Single 3-input NAND gate
18. Contents
1
2
3
4
5
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
6
6.1
6.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 6
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
8
9
10
11
12
13
14
15
16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
16.1
16.2
16.3
16.4
17
18
Contact information. . . . . . . . . . . . . . . . . . . . . 16
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 September 2014
Document identifier: 74LVC1G10
相关型号:
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