74LVC1G66GS/S500H [NXP]

Bus Driver, LVC/LCX/Z Series, 1-Func, 1-Bit, True Output, CMOS;
74LVC1G66GS/S500H
型号: 74LVC1G66GS/S500H
厂家: NXP    NXP
描述:

Bus Driver, LVC/LCX/Z Series, 1-Func, 1-Bit, True Output, CMOS

驱动 逻辑集成电路
文件: 总25页 (文件大小:293K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
74LVC1G66  
Bilateral switch  
Rev. 9 — 15 January 2015  
Product data sheet  
1. General description  
The 74LVC1G66 provides one single pole, single-throw analog switch function. It has two  
input/output terminals (Y and Z) and an active HIGH enable input pin (E). When E is LOW,  
the analog switch is turned off.  
Schmitt-trigger action at the enable input makes the circuit tolerant of slower input rise and  
fall times across the entire VCC range from 1.65 V to 5.5 V.  
2. Features and benefits  
Wide supply voltage range from 1.65 V to 5.5 V  
Very low ON resistance:  
7.5 (typical) at VCC = 2.7 V  
6.5 (typical) at VCC = 3.3 V  
6 (typical) at VCC = 5 V  
Switch current capability of 32 mA  
High noise immunity  
CMOS low power consumption  
TTL interface compatibility at 3.3 V  
Latch-up performance meets requirements of JESD78 Class I  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
Enable input accepts voltages up to 5.5 V  
Multiple package options  
Specified from 40 C to +85 C and 40 C to +125 C  
3. Ordering information  
Table 1.  
Ordering information  
Package  
Temperature range Name  
Type number  
Description  
Version  
74LVC1G66GW 40 C to +125 C  
TSSOP5 plastic thin shrink small outline package; 5 leads;  
body width 1.25 mm  
SOT353-1  
74LVC1G66GV  
40 C to +125 C  
SC-74A  
XSON6  
plastic surface-mounted package; 5 leads  
SOT753  
SOT886  
74LVC1G66GM 40 C to +125 C  
plastic extremely thin small outline package; no leads;  
6 terminals; body 1 1.45 0.5 mm  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
Table 1.  
Ordering information …continued  
Type number  
Package  
Temperature range Name  
Description  
Version  
74LVC1G66GF  
40 C to +125 C  
XSON6  
XSON6  
XSON6  
plastic extremely thin small outline package; no leads;  
6 terminals; body 1 1 0.5 mm  
SOT891  
SOT1115  
SOT1202  
74LVC1G66GN 40 C to +125 C  
extremely thin small outline package; no leads;  
6 terminals; body 0.9 1.0 0.35 mm  
74LVC1G66GS  
40 C to +125 C  
extremely thin small outline package; no leads;  
6 terminals; body 1.0 1.0 0.35 mm  
4. Marking  
Table 2.  
Marking  
Type number  
Marking code[1]  
74LVC1G66GW  
74LVC1G66GV  
74LVC1G66GM  
74LVC1G66GF  
74LVC1G66GN  
74LVC1G66GS  
VL  
V66  
VL  
VL  
VL  
VL  
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.  
5. Functional diagram  
(
ꢀꢁꢁꢁꢂ  
=
<
;ꢃ  
ꢀꢀꢁDDJꢂꢃꢄ  
PQDꢀꢄꢅ  
Fig 1. Logic symbol  
Fig 2. IEC logic symbol  
=
<
(
9
&&  
ꢀꢀꢁDDPꢆꢇꢄ  
Fig 3. Logic diagram  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
2 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
6. Pinning information  
6.1 Pinning  
ꢀꢁ/9&ꢂ*ꢃꢃ  
ꢀꢁ/9&ꢂ*ꢃꢃ  
<
=
9
&&  
ꢀꢁ/9&ꢂ*ꢃꢃ  
<
=
9
(
<
=
9
&&  
&&  
QꢇFꢇ  
(
QꢇFꢇ  
*1'  
*1'  
(
*1'  
ꢀꢀꢁDDJꢂꢇꢃ  
ꢀꢀꢁDDJꢂꢇꢇ  
7UDQVSDUHQWꢁWRSꢁYLHZ  
7UDQVSDUHQWꢁWRSꢁYLHZ  
ꢀꢀꢁDDGꢅꢈꢂ  
Fig 4. Pin configuration  
SOT353-1 and SOT753  
Fig 5. Pin configuration SOT886  
Fig 6. Pin configuration SOT891  
and SOT1115 and SOT1202  
6.2 Pin description  
Table 3.  
Symbol  
Pin description  
Pin  
Description  
SOT353-1, SOT753 SOT886, SOT891, SOT1115 and SOT1202  
Y
1
2
3
4
-
1
2
3
4
5
6
independent input or output  
independent output or input  
ground (0 V)  
Z
GND  
E
enable input (active HIGH)  
not connected  
n.c.  
VCC  
5
supply voltage  
7. Functional description  
Table 4.  
Function table[1]  
Input E  
Switch  
L
OFF-state  
ON-state  
H
[1] H = HIGH voltage level; L = LOW voltage level  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
3 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
8. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).  
Symbol  
VCC  
VI  
Parameter  
Conditions  
Min  
0.5  
0.5  
50  
-
Max  
+6.5  
+6.5  
-
Unit  
V
supply voltage  
[1]  
[2]  
input voltage  
V
IIK  
input clamping current  
switch clamping current  
switch voltage  
VI < 0.5 V or VI > VCC + 0.5 V  
VI < 0.5 V or VI > VCC + 0.5 V  
enable and disable mode  
mA  
mA  
V
ISK  
50  
VCC + 0.5  
50  
100  
-
VSW  
ISW  
0.5  
-
switch current  
VSW > 0.5 V or VSW < VCC + 0.5 V  
mA  
mA  
mA  
C  
ICC  
supply current  
-
IGND  
Tstg  
Ptot  
ground current  
100  
65  
-
storage temperature  
total power dissipation  
+150  
250  
[3]  
Tamb = 40 C to +125 C  
mW  
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.  
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.  
[3] For TSSOP5 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K.  
For XSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.  
9. Recommended operating conditions  
Table 6.  
Symbol  
VCC  
Recommended operating conditions  
Parameter  
Conditions  
Min  
Typ  
Max  
5.5  
Unit  
V
supply voltage  
input voltage  
1.65  
-
-
-
-
-
-
VI  
0
5.5  
V
[1]  
VSW  
switch voltage  
ambient temperature  
0
VCC  
+125  
20  
V
Tamb  
40  
C  
[2]  
[2]  
t/V  
input transition rise and  
fall rate  
VCC = 1.65 V to 2.7 V  
VCC = 2.7 V to 5.5 V  
-
-
ns/V  
ns/V  
10  
[1] To avoid sinking GND current from terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch  
must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit  
for the voltage drop across the switch.  
[2] Applies to control signal levels.  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
4 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
10. Static characteristics  
Table 7.  
Static characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).  
Symbol Parameter  
Conditions  
40 C to +85 C  
40 C to +125 C Unit  
Min  
Typ[1]  
Max  
Min  
Max  
VIH  
HIGH-level  
input voltage  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
0.65VCC  
-
-
0.65VCC  
-
V
V
V
V
V
V
V
V
1.7  
-
-
1.7  
-
2.0  
-
-
-
2.0  
-
-
0.7VCC  
-
0.7VCC  
VIL  
LOW-level  
input voltage  
-
-
-
-
-
-
0.35VCC  
0.7  
-
-
-
-
-
0.35VCC  
0.7  
-
-
-
0.8  
0.8  
0.3VCC  
5  
0.3VCC  
[2]  
[2]  
II  
input leakage pin E; VI = 5.5 V or GND;  
current  
0.1  
100 A  
VCC = 0 V to 5.5 V  
IS(OFF)  
OFF-state  
leakage  
current  
VCC = 5.5 V; see Figure 7  
-
-
-
-
0.1  
0.1  
0.1  
5
5  
5  
-
-
-
-
200 A  
[2]  
[2]  
[2]  
IS(ON)  
ON-state  
leakage  
current  
VCC = 5.5 V; see Figure 8  
200 A  
ICC  
supply  
current  
VI = 5.5 V or GND;  
10  
200  
A  
VSW = GND or VCC  
;
VCC = 1.65 V to 5.5 V  
ICC  
additional  
supply  
pin E; VI = VCC 0.6 V;  
VSW = GND or VCC; VCC = 5.5 V  
500  
5000 A  
current  
CI  
input  
capacitance  
-
-
-
2.0  
6.5  
11  
-
-
-
-
-
-
-
-
-
pF  
pF  
pF  
CS(OFF) OFF-state  
capacitance  
CS(ON)  
ON-state  
capacitance  
[1] All typical values are measured at Tamb = 25 C.  
[2] These typical values are measured at VCC = 3.3 V.  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
5 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
10.1 Test circuits  
9
9
&&  
&&  
(
=
(
=
9
9
,+  
,/  
<
<
,
,
6
6
*1'  
*1'  
9
,
9
2
9
,
9
2
ꢀꢀꢁDDPꢆꢃꢇ  
ꢀꢀꢁDDPꢆꢇꢀ  
VI = VCC or GND and VO = GND or VCC  
.
VI = VCC or GND and VO = open circuit.  
Fig 7. Test circuit for measuring OFF-state leakage  
current  
Fig 8. Test circuit for measuring ON-state leakage  
current  
10.2 ON resistance  
Table 8.  
ON resistance  
At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see Figure 10 to Figure 15.  
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit  
Min Typ[1] Max  
Min  
Max  
RON(peak) ON resistance (peak) VI = GND to VCC; see Figure 9  
ISW = 4 mA;  
-
34.0  
130  
-
195  
VCC = 1.65 V to 1.95 V  
I
SW = 8 mA; VCC = 2.3 V to 2.7 V  
-
-
-
-
12.0  
10.4  
7.8  
30  
25  
20  
15  
-
-
-
-
45  
38  
30  
23  
ISW = 12 mA; VCC = 2.7 V  
ISW = 24 mA; VCC = 3.0 V to 3.6 V  
ISW = 32 mA; VCC = 4.5 V to 5.5 V  
VI = GND; see Figure 9  
6.2  
RON(rail) ON resistance (rail)  
ISW = 4 mA;  
-
8.2  
18  
-
27  
VCC = 1.65 V to 1.95 V  
ISW = 8 mA; VCC = 2.3 V to 2.7 V  
ISW = 12 mA; VCC = 2.7 V  
-
-
-
-
7.1  
6.9  
6.5  
5.8  
16  
14  
12  
10  
-
-
-
-
24  
21  
18  
15  
ISW = 24 mA; VCC = 3.0 V to 3.6 V  
ISW = 32 mA; VCC = 4.5 V to 5.5 V  
VI = VCC; see Figure 9  
ISW = 4 mA;  
-
10.4  
30  
-
45  
VCC = 1.65 V to 1.95 V  
ISW = 8 mA; VCC = 2.3 V to 2.7 V  
ISW = 12 mA; VCC = 2.7 V  
-
-
-
-
7.6  
7.0  
6.1  
4.9  
20  
18  
15  
10  
-
-
-
-
30  
27  
23  
15  
ISW = 24 mA; VCC = 3.0 V to 3.6 V  
ISW = 32 mA; VCC = 4.5 V to 5.5 V  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
6 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
Table 8.  
ON resistance …continued  
At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see Figure 10 to Figure 15.  
Symbol Parameter  
Conditions  
40 C to +85 C 40 C to +125 C Unit  
Min Typ[1] Max  
Min  
Max  
[2]  
RON(flat) ON resistance  
(flatness)  
VI = GND to VCC  
ISW = 4 mA;  
-
26.0  
-
-
-
VCC = 1.65 V to 1.95 V  
ISW = 8 mA; VCC = 2.3 V to 2.7 V  
ISW = 12 mA; VCC = 2.7 V  
-
-
-
-
5.0  
3.5  
2.0  
1.5  
-
-
-
-
-
-
-
-
-
-
-
-
ISW = 24 mA; VCC = 3.0 V to 3.6 V  
ISW = 32 mA; VCC = 4.5 V to 5.5 V  
[1] Typical values are measured at Tamb = 25 C and nominal VCC  
.
[2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and  
temperature.  
10.3 ON resistance test circuit and graphs  
PQDꢅꢄꢆ  
ꢀꢋ  
5
21ꢁ  
ꢉȍꢊ  
ꢅꢋ  
9
6:  
ꢉꢃꢊꢁ  
ꢄꢋ  
ꢃꢋ  
9
&&  
(
<
ꢉꢄꢊꢁ  
ꢉꢅꢊꢁ  
9
,+  
=
ꢉꢀꢊꢁ  
ꢉꢆꢊꢁ  
*1'  
9
,
,
6:  
9 ꢁꢉ9ꢊ  
,
ꢀꢀꢁDDPꢆꢇꢁ  
RON = VSW/ISW  
.
(1) VCC = 1.8 V.  
(2) VCC = 2.5 V.  
(3) VCC = 2.7 V.  
(4)  
VCC = 3.3 V.  
(5) VCC = 5.0 V.  
Fig 9. Test circuit for measuring ON resistance  
Fig 10. Typical ON resistance as a function of input  
voltage; Tamb = 25 C  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
7 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
ꢀꢀꢁDDDꢄꢁꢉ  
ꢀꢀꢁDDDꢄꢀꢃ  
ꢆꢆ  
ꢃꢆ  
5
5
21ꢁ  
ꢉȍꢊ  
21ꢁ  
ꢉȍꢊ  
ꢀꢆ  
ꢃꢅ  
ꢃꢃ  
ꢅꢆ  
ꢄꢆ  
ꢃꢆ  
ꢉꢀꢊꢁ  
ꢉꢅꢊꢁ  
ꢉꢄꢊꢁ  
ꢉꢃꢊ  
ꢉꢃꢊ  
ꢉꢄꢊ  
ꢉꢅꢊ  
ꢉꢀꢊ  
ꢋꢇꢀ  
ꢋꢇꢌ  
ꢃꢇꢄ  
ꢃꢇꢈ  
ꢄꢇꢋ  
ꢋꢇꢆ  
ꢃꢇꢋ  
ꢃꢇꢆ  
ꢄꢇꢋ  
ꢄꢇꢆ  
9 ꢁꢉ9ꢊ  
,
9 ꢁꢉ9ꢊ  
,
(1) Tamb = 125 C.  
(2) amb = 85 C.  
(1) Tamb = 125 C.  
(2) amb = 85 C.  
T
T
(3) Tamb = 25 C.  
(4) Tamb = 40 C.  
(3) Tamb = 25 C.  
(4) Tamb = 40 C.  
Fig 11. ON resistance as a function of input voltage;  
VCC = 1.8 V  
Fig 12. ON resistance as a function of input voltage;  
VCC = 2.5 V  
ꢀꢀꢁDDDꢄꢀꢇ  
ꢀꢀꢁDDDꢄꢁꢀ  
ꢃꢅ  
ꢃꢋ  
5
21ꢁ  
5
21ꢁ  
ꢉȍꢊ  
ꢉȍꢊ  
ꢃꢃ  
ꢉꢃꢊ  
ꢉꢃꢊ  
ꢉꢄꢊ  
ꢉꢄꢊ  
ꢉꢅꢊ  
ꢉꢅꢊ  
ꢉꢀꢊ  
ꢉꢀꢊ  
ꢋꢇꢆ  
ꢃꢇꢋ  
ꢃꢇꢆ  
ꢄꢇꢋ  
ꢄꢇꢆ  
9 ꢁꢉ9ꢊ  
ꢅꢇꢋ  
9 ꢁꢉ9ꢊ  
,
,
(1) Tamb = 125 C.  
(2) Tamb = 85 C.  
(1) Tamb = 125 C.  
(2) Tamb = 85 C.  
(3)  
Tamb = 25 C.  
(3)  
Tamb = 25 C.  
(4) Tamb = 40 C.  
(4) Tamb = 40 C.  
Fig 13. ON resistance as a function of input voltage;  
VCC = 2.7 V  
Fig 14. ON resistance as a function of input voltage;  
VCC = 3.3 V  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
8 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
ꢀꢀꢁDDDꢄꢁꢁ  
5
21  
ꢉȍꢊ  
ꢉꢃꢊ  
ꢉꢄꢊ  
ꢉꢅꢊ  
ꢉꢀꢊ  
9 ꢁꢉ9ꢊ  
,
(1) Tamb = 125 C.  
(2)  
Tamb = 85 C.  
(3) Tamb = 25 C.  
(4) Tamb = 40 C.  
Fig 15. ON resistance as a function of input voltage; VCC = 5.0 V  
11. Dynamic characteristics  
Table 9.  
Dynamic characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see Figure 18.  
Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit  
Min  
Typ[1]  
Max  
Min  
Max  
[2][3]  
tpd  
propagation delay Y to Z or Z to Y;  
see Figure 16  
VCC = 1.65 V to 1.95 V  
-
-
-
-
-
0.8  
0.4  
0.4  
0.3  
0.2  
2.0  
1.2  
1.0  
0.8  
0.6  
-
-
-
-
-
3.0  
2.0  
1.5  
1.5  
1.0  
ns  
ns  
ns  
ns  
ns  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
E to Y or Z; see Figure 17  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
[4]  
ten  
enable time  
1.0  
1.0  
1.0  
1.0  
1.0  
5.3  
3.0  
2.6  
2.5  
1.9  
12  
6.5  
6.0  
5.0  
4.2  
1.0  
1.0  
1.0  
1.0  
1.0  
15.5  
8.5  
8.0  
6.5  
5.5  
ns  
ns  
ns  
ns  
ns  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
9 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
Table 9.  
Dynamic characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see Figure 18.  
Symbol Parameter  
Conditions  
40 C to +85 C  
40 C to +125 C Unit  
Min  
Typ[1]  
Max  
Min  
Max  
[5]  
tdis  
disable time  
E to Y or Z; see Figure 17  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
1.0  
1.0  
1.0  
1.0  
1.0  
4.2  
2.4  
3.6  
3.4  
2.5  
10  
6.9  
7.5  
6.5  
5.0  
1.0  
1.0  
1.0  
1.0  
1.0  
13  
9.0  
9.5  
8.5  
6.5  
ns  
ns  
ns  
ns  
ns  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
[6]  
CPD  
power dissipation CL = 50 pF; fi = 10 MHz;  
capacitance  
VI = GND to VCC  
VCC = 2.5 V  
-
-
-
9.8  
-
-
-
-
-
-
-
-
-
pF  
pF  
pF  
VCC = 3.3 V  
12.0  
17.3  
VCC = 5.0 V  
[1] Typical values are measured at Tamb = 25 C and nominal VCC  
.
[2] tpd is the same as tPLH and tPHL  
[3] propagation delay is the calculated RC time constant of the typical ON resistance of the switch and the specified capacitance when  
driven by an ideal voltage source (zero output impedance).  
[4]  
ten is the same as tPZH and tPZL  
[5] tdis is the same as tPLZ and tPHZ  
[6] CPD is used to determine the dynamic power dissipation (PD in W).  
PD = CPD VCC2 fi N + {(CL + CS(ON))VCC2 fo} where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
CS(ON) = maximum ON-state switch capacitance in pF;  
VCC = supply voltage in V;  
N = number of inputs switching;  
{(CL + CS(ON)) VCC2 fo} = sum of the outputs.  
11.1 Waveforms and test circuit  
9
,
9
<ꢁRUꢁ=ꢁLQSXW  
=ꢁRU<ꢁRXWSXW  
0
*1'  
W
W
3/+  
3+/  
9
2+  
9
0
9
2/  
PQDꢅꢅꢄ  
Measurement points are given in Table 10.  
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.  
Fig 16. Input (Y or Z) to output (Z or Y) propagation delays  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
10 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
9
,
(
9
0
*1'  
W
W
3=/  
3/=  
9
&&  
RXWSXWꢁ  
<ꢁRUꢁ=  
<ꢁRUꢁ=  
/2:ꢏWRꢏ2))ꢁ  
2))ꢏWRꢏ/2:  
9
0
9
;
9
2/  
W
W
3=+  
3+=  
9
2+  
9
RXWSXWꢁ  
+,*+ꢏWRꢏ2))ꢁ  
2))ꢏWRꢏ+,*+  
<
9
0
*1'  
VZLWFKꢁ  
VZLWFKꢁ  
VZLWFKꢁ  
HQDEOHG  
HQDEOHG  
GLVDEOHG  
PQDꢅꢅꢃ  
Measurement points are given in Table 10.  
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.  
Fig 17. Enable and disable times  
Table 10. Measurement points  
Supply voltage  
VCC  
Input  
Output  
VM  
VM  
VX  
VY  
1.65 V to 1.95 V  
2.3 V to 2.7 V  
2.7 V  
0.5VCC  
0.5VCC  
1.5 V  
1.5 V  
0.5VCC  
0.5VCC  
0.5VCC  
1.5 V  
VOL + 0.15 V  
VOL + 0.15 V  
VOL + 0.3 V  
VOL + 0.3 V  
VOL + 0.3 V  
VOH 0.15 V  
VOH 0.15 V  
VOH 0.3 V  
VOH 0.3 V  
VOH 0.3 V  
3.0 V to 3.6 V  
4.5 V to 5.5 V  
1.5 V  
0.5VCC  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
11 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
9
(;7  
9
&&  
5
/
9
9
2
,
*
'87  
5
7
&
/
5
/
PQDꢅꢁꢅ  
Test data is given in Table 11.  
Definitions for test circuit:  
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.  
CL = Load capacitance including jig and probe capacitance.  
RL = Load resistance.  
VEXT = External voltage for measuring switching times.  
Fig 18. Test circuit for measuring switching times  
Table 11. Test data  
Supply voltage  
VCC  
Input  
VI  
Load  
CL  
VEXT  
tr, tf  
RL  
tPLH, tPHL  
open  
tPZH, tPHZ  
tPZL, tPLZ  
2VCC  
2VCC  
6 V  
1.65 V to 1.95 V  
2.3 V to 2.7 V  
2.7 V  
VCC  
VCC  
2.7 V  
2.7 V  
VCC  
2.0 ns  
2.0 ns  
2.5 ns  
2.5 ns  
2.5 ns  
30 pF  
30 pF  
50 pF  
50 pF  
50 pF  
1 k  
GND  
GND  
GND  
GND  
GND  
500   
500   
500   
500   
open  
open  
3.0 V to 3.6 V  
4.5 V to 5.5 V  
open  
6 V  
open  
2VCC  
11.2 Additional dynamic characteristics  
Table 12. Additional dynamic characteristics  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
THD  
total harmonic distortion  
RL = 10 k; CL = 50 pF; fi = 1 kHz;  
see Figure 19  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
-
0.032  
0.008  
0.006  
0.001  
-
-
-
-
%
%
%
%
RL = 10 k; CL = 50 pF; fi = 10 kHz;  
see Figure 19  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
-
0.068  
0.009  
0.008  
0.006  
-
-
-
-
%
%
%
%
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
12 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
Table 12. Additional dynamic characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
f(3dB)  
3 dB frequency response RL = 600 ; CL = 50 pF;  
see Figure 20  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
-
135  
145  
150  
155  
-
-
-
-
MHz  
MHz  
MHz  
MHz  
RL = 50 ; CL = 5 pF; see Figure 20  
VCC = 1.65 V  
VCC = 2.3 V  
-
-
-
-
500  
500  
500  
500  
-
-
-
-
MHz  
MHz  
MHz  
MHz  
VCC = 3.0 V  
VCC = 4.5 V  
RL = 50 ; CL = 10 pF; see Figure 20  
VCC = 1.65 V  
-
-
-
-
200  
350  
410  
440  
-
-
-
-
MHz  
MHz  
MHz  
MHz  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
iso  
isolation (OFF-state)  
RL = 600 ; CL = 50 pF; fi = 1 MHz;  
see Figure 21  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
-
46  
46  
46  
46  
-
-
-
-
dB  
dB  
dB  
dB  
RL = 50 ; CL = 5 pF; fi = 1 MHz;  
see Figure 21  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
-
37  
37  
37  
37  
-
-
-
-
dB  
dB  
dB  
dB  
Vct  
crosstalk voltage  
between digital input and switch;  
RL = 600 ; CL = 50 pF; fi = 1 MHz;  
tr = tf = 2 ns; see Figure 22  
VCC = 1.65 V  
VCC = 2.3 V  
VCC = 3.0 V  
VCC = 4.5 V  
-
-
-
-
69  
87  
-
-
-
-
mV  
mV  
mV  
mV  
156  
302  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
13 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
Table 12. Additional dynamic characteristics …continued  
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
Qinj  
charge injection  
CL = 0.1 nF; Vgen = 0 V; Rgen = 0 ;  
fi = 1 MHz; RL = 1 M; see Figure 23  
VCC = 1.8 V  
VCC = 2.5 V  
VCC = 3.3 V  
VCC = 4.5 V  
VCC = 5.5 V  
-
-
-
-
-
3.3  
4.1  
5.0  
6.4  
7.5  
-
-
-
-
-
pC  
pC  
pC  
pC  
pC  
11.3 Test circuits  
9
ꢋꢇꢆ9  
&&  
&&  
(
9
5
/
,+  
ꢃꢋꢁ—)  
<ꢐ=  
=ꢐ<  
9
2
I
L
ꢈꢋꢋꢁȍ  
&
/
'
ꢀꢀꢁDDPꢆꢇꢉ  
Test conditions:  
VCC = 1.65 V: Vi = 1.4 V (p-p).  
VCC = 2.3 V: Vi = 2 V (p-p).  
V
CC = 3 V: Vi = 2.5 V (p-p).  
VCC = 4.5 V: Vi = 4 V (p-p).  
Fig 19. Test circuit for measuring total harmonic distortion  
9
ꢋꢇꢆ9  
&&  
&&  
(
9
5
/
,+  
ꢋꢇꢃꢁ—)  
ꢆꢋꢁȍ  
<ꢐ=  
=ꢐ<  
9
2
I
L
&
/
G%  
ꢀꢀꢁDDPꢆꢇꢆ  
Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads 3 dB.  
Fig 20. Test circuit for measuring the frequency response when switch is in ON-state  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
14 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
ꢋꢇꢆ9  
9
ꢋꢇꢆ9  
&&  
&&  
&&  
(
5
/
9
5
/
,/  
ꢋꢇꢃꢁ—)  
<ꢐ=  
=ꢐ<  
9
2
I
L
ꢆꢋꢁȍ  
&
/
G%  
ꢀꢀꢁDDPꢆꢇꢂ  
Adjust fi voltage to obtain 0 dBm level at input.  
Fig 21. Test circuit for measuring isolation (OFF-state)  
9
&&  
(
<ꢐ=  
=ꢐ<  
9
2
ORJLFꢁ  
LQSXW  
*
5
/
&
/
ꢆꢋꢁȍ  
ꢈꢋꢋꢁȍ  
ꢋꢇꢆ9  
ꢋꢇꢆ9  
ꢀꢀꢁDDPꢆꢇꢈ  
&&  
&&  
Fig 22. Test circuit for measuring crosstalk between digital input and switch  
9
&&  
(
5
JHQ  
<ꢐ=  
=ꢐ<  
9
2
5
/ꢁ  
ꢃꢁ0ȍꢁ  
&
/ꢁ  
ꢋꢇꢃꢁQ)  
*
ORJLFꢁ  
LQSXW  
9
JHQ  
ꢀꢀꢁDDPꢆꢇꢅ  
ORJLFꢁ  
LQSXWꢁꢉ(ꢊ  
RII  
RQ  
RII  
9
2
ǻ9  
2
ꢀꢀꢁDDPꢆꢇꢃ  
Qinj = VO CL.  
VO = output voltage variation.  
Rgen = generator resistance.  
V
gen = generator voltage.  
Fig 23. Test circuit for measuring charge injection  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
15 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
12. Package outline  
76623ꢊꢋꢄSODVWLFꢄWKLQꢄVKULQNꢄVPDOOꢄRXWOLQHꢄSDFNDJHꢌꢄꢊꢄOHDGVꢌꢄERG\ꢄZLGWKꢄꢂꢅꢆꢊꢄPPꢄ  
627ꢇꢊꢇꢍꢂꢄ  
'ꢁ  
(ꢁ  
$ꢁ  
;ꢁ  
Fꢁ  
\ꢁ  
+
Yꢁ 0ꢁ  
$ꢁ  
(ꢁ  
=ꢁ  
ꢆꢁ  
ꢃꢁ  
ꢀꢁ  
ꢅꢁ  
$
ꢄꢁ  
$ꢁ  
ꢉ$ ꢊꢁ  
$
ꢃꢁ  
șꢁ  
/
Sꢁ  
/ꢁ  
Hꢁ  
Zꢁ 0ꢁ  
E
Sꢁ  
GHWDLOꢁ;ꢁ  
H
ꢃꢁ  
ꢋꢁ  
ꢃꢇꢆꢁ  
ꢅꢁPPꢁ  
VFDOHꢁ  
',0(16,216ꢄꢈPPꢄDUHꢄWKHꢄRULJLQDOꢄGLPHQVLRQVꢉꢄ  
$ꢄ  
ꢈꢂꢉꢄ  
ꢈꢂꢉꢄ  
ꢈꢂꢉꢄ  
$
$
$
E
Fꢄ  
'
(
Hꢄ  
ꢋꢇꢈꢆꢁ  
H
+
/ꢄ  
/
81,7ꢄ  
șꢁ  
Yꢄ  
Zꢄ  
ꢋꢇꢃꢁ  
\ꢄ  
=
ꢂꢄ  
ꢆꢄ  
ꢇꢄ  
Sꢄ  
ꢂꢄ  
(ꢄ  
Sꢄ  
PD[ꢅꢄ  
ꢋꢇꢃꢁ  
ꢋꢁ  
ꢃꢇꢋꢁ  
ꢋꢇꢌꢁ  
ꢋꢇꢅꢋꢁ ꢋꢇꢄꢆꢁ ꢄꢇꢄꢆꢁ ꢃꢇꢅꢆꢁ  
ꢋꢇꢃꢆꢁ ꢋꢇꢋꢌꢁ ꢃꢇꢌꢆꢁ ꢃꢇꢃꢆꢁ  
ꢄꢇꢄꢆꢁ  
ꢄꢇꢋꢁ  
ꢋꢇꢀꢈꢁ  
ꢋꢇꢄꢃꢁ  
ꢋꢇꢈꢋꢁ  
ꢋꢇꢃꢆꢁ  
ꢎƒꢁ  
ꢋƒꢁ  
PPꢁ  
ꢃꢇꢃꢁ  
ꢃꢇꢅꢁ  
ꢋꢇꢀꢄꢆꢁ  
ꢋꢇꢅꢁ  
ꢋꢇꢃꢁ  
ꢋꢇꢃꢆꢁ  
1RWHꢄ  
ꢃꢇꢁ3ODVWLFꢁRUꢁPHWDOꢁSURWUXVLRQVꢁRIꢁꢋꢇꢃꢆꢁPPꢁPD[LPXPꢁSHUꢁVLGHꢁDUHꢁQRWꢁLQFOXGHGꢇꢁ  
ꢄ5()(5(1&(6ꢄ  
287/,1(ꢄ  
9(56,21ꢄ  
(8523($1ꢄ  
352-(&7,21ꢄ  
,668(ꢄ'$7(ꢄ  
ꢄ,(&ꢄ  
ꢄ-('(&ꢄ  
02ꢄꢋꢅꢁ  
ꢄ-(,7$ꢄ  
ꢋꢋꢏꢋꢍꢏꢋꢃꢁ  
ꢋꢅꢏꢋꢄꢏꢃꢍꢁ  
ꢁ627ꢅꢆꢅꢏꢃꢁ  
6&ꢏꢌꢌ$ꢁ  
Fig 24. Package outline SOT353-1 (TSSOP5)  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
16 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
3ODVWLFꢄVXUIDFHꢍPRXQWHGꢄSDFNDJHꢌꢄꢊꢄOHDGV  
627ꢀꢊꢇ  
'
%
(
$
;
\
+
Y
0
$
(
4
$
$
F
/
S
GHWDLOꢁ;  
E
H
Z
0 %  
S
ꢄꢁPP  
VFDOH  
',0(16,216ꢄꢈPPꢄDUHꢄWKHꢄRULJLQDOꢄGLPHQVLRQVꢉ  
81,7  
$
$
E
F
'
H
+
/
4
Y
Z
\
(
S
S
(
ꢋꢇꢃꢋꢋꢁ  
ꢋꢇꢋꢃꢅ  
ꢋꢇꢀꢋꢁ  
ꢋꢇꢄꢆ  
ꢃꢇꢃꢁ  
ꢋꢇꢍ  
ꢋꢇꢄꢈꢁ  
ꢋꢇꢃꢋ  
ꢅꢇꢃꢁ  
ꢄꢇꢎ  
ꢃꢇꢎꢁ  
ꢃꢇꢅ  
ꢅꢇꢋꢁ  
ꢄꢇꢆ  
ꢋꢇꢈꢁ  
ꢋꢇꢄ  
ꢋꢇꢅꢅꢁ  
ꢋꢇꢄꢅ  
PP  
ꢋꢇꢍꢆ  
ꢋꢇꢄ  
ꢋꢇꢄ  
ꢋꢇꢃ  
ꢄ5()(5(1&(6  
ꢄ-('(& ꢄ-(,7$  
6&ꢏꢎꢀ$  
(8523($1ꢄ  
352-(&7,21  
287/,1(ꢄ  
9(56,21  
,668(ꢄ'$7(  
ꢄ,(&  
ꢋꢄꢏꢋꢀꢏꢃꢈꢁ  
ꢋꢈꢏꢋꢅꢏꢃꢈ  
ꢁ627ꢎꢆꢅ  
Fig 25. Package outline SOT753 (SC-74A)  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
17 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
;621ꢈꢑꢁSODVWLFꢁH[WUHPHO\ꢁWKLQꢁVPDOOꢁRXWOLQHꢁSDFNDJHꢒꢁQRꢁOHDGVꢒꢁꢈꢁWHUPLQDOVꢒꢁERG\ꢁꢃꢁ[ꢁꢃꢇꢀꢆꢁ[ꢁꢋꢇꢆꢁPP  
E
627ꢌꢌꢈ  
ꢀ[  
ꢉꢄꢊ  
/
/
H
H
H
ꢈ[  
ꢉꢄꢊ  
$
$
'
(
WHUPLQDOꢁꢃ  
LQGH[ꢁDUHD  
ꢄꢁPP  
VFDOH  
'LPHQVLRQVꢁꢉPPꢁDUHꢁWKHꢁRULJLQDOꢁGLPHQVLRQVꢊ  
ꢉꢃꢊ  
8QLW  
$
$
E
'
(
H
H
/
/
PD[ ꢋꢇꢆ ꢋꢇꢋꢀ ꢋꢇꢄꢆ ꢃꢇꢆꢋ ꢃꢇꢋꢆ  
ꢋꢇꢅꢆ ꢋꢇꢀꢋ  
ꢋꢇꢅꢋ ꢋꢇꢅꢆ  
ꢋꢇꢄꢎ ꢋꢇꢅꢄ  
QRP  
PLQ  
ꢋꢇꢄꢋ ꢃꢇꢀꢆ ꢃꢇꢋꢋ ꢋꢇꢈ  
ꢋꢇꢃꢎ ꢃꢇꢀꢋ ꢋꢇꢍꢆ  
PP  
ꢋꢇꢆ  
1RWHV  
ꢃꢇꢁ,QFOXGLQJꢁSODWLQJꢁWKLFNQHVVꢇ  
ꢄꢇꢁ&DQꢁEHꢁYLVLEOHꢁLQꢁVRPHꢁPDQXIDFWXULQJꢁSURFHVVHVꢇ  
VRWꢃꢃꢅBSR  
5HIHUHQFHV  
2XWOLQH  
(XURSHDQ  
SURMHFWLRQ  
,VVXHꢁGDWH  
YHUVLRQ  
,(&  
-('(&  
02ꢏꢄꢆꢄ  
-(,7$  
ꢋꢀꢏꢋꢎꢏꢄꢄ  
ꢃꢄꢏꢋꢃꢏꢋꢆ  
627ꢌꢌꢈ  
Fig 26. Package outline SOT886 (XSON6)  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
18 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
;621ꢃꢋꢄSODVWLFꢄH[WUHPHO\ꢄWKLQꢄVPDOOꢄRXWOLQHꢄSDFNDJHꢌꢄQRꢄOHDGVꢌꢄꢃꢄWHUPLQDOVꢌꢄERG\ꢄꢂꢄ[ꢄꢂꢄ[ꢄꢐꢅꢊꢄPP  
627ꢎꢏꢂ  
E
ꢀîꢁ  
ꢉꢃꢊ  
/
/
H
H
H
ꢈîꢁ  
ꢉꢃꢊ  
$
$
'
(
WHUPLQDOꢁꢃꢁ  
LQGH[ꢁDUHD  
ꢄꢁPP  
VFDOH  
',0(16,216ꢄꢈPPꢄDUHꢄWKHꢄRULJLQDOꢄGLPHQVLRQVꢉ  
$
$
ꢂꢄ  
81,7  
E
'
(
H
H
/
/
PD[ PD[  
ꢋꢇꢄꢋꢁ ꢃꢇꢋꢆꢁ ꢃꢇꢋꢆꢁ  
ꢋꢇꢃꢄ ꢋꢇꢍꢆ ꢋꢇꢍꢆ  
ꢋꢇꢅꢆꢁ ꢋꢇꢀꢋꢁ  
ꢋꢇꢄꢎ ꢋꢇꢅꢄ  
PP  
ꢋꢇꢆ ꢋꢇꢋꢀ  
ꢋꢇꢆꢆ  
ꢋꢇꢅꢆ  
1RWHꢄ  
ꢃꢇꢁ&DQꢁEHꢁYLVLEOHꢁLQꢁVRPHꢁPDQXIDFWXULQJꢁSURFHVVHVꢇ  
5()(5(1&(6  
-('(& -(,7$  
287/,1(ꢄ  
9(56,21  
(8523($1ꢄ  
352-(&7,21  
,668(ꢄ'$7(  
,(&  
ꢋꢆꢏꢋꢀꢏꢋꢈꢁ  
ꢋꢎꢏꢋꢆꢏꢃꢆ  
627ꢌꢍꢃ  
Fig 27. Package outline SOT891 (XSON6)  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
19 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
;621ꢃꢋꢄH[WUHPHO\ꢄWKLQꢄVPDOOꢄRXWOLQHꢄSDFNDJHꢌꢄQRꢄOHDGVꢌꢄ  
ꢃꢄWHUPLQDOVꢌꢄERG\ꢄꢐꢅꢏꢄ[ꢄꢂꢅꢐꢄ[ꢄꢐꢅꢇꢊꢄPP  
627ꢂꢂꢂꢊ  
E
ꢉꢄꢊ  
ꢉꢀîꢊ  
/
/
H
H
H
ꢉꢄꢊ  
ꢉꢈîꢊ  
$
$
'
(
WHUPLQDOꢁꢃꢁ  
LQGH[ꢁDUHD  
/
ꢋꢇꢆ  
VFDOH  
ꢃꢁPP  
'LPHQVLRQV  
8QLW  
ꢉꢃꢊ  
$
$
E
'
(
H
H
/
PD[ꢁ ꢋꢇꢅꢆ ꢋꢇꢋꢀ ꢋꢇꢄꢋꢁ ꢋꢇꢍꢆꢁ ꢃꢇꢋꢆꢁ  
ꢋꢇꢅꢆꢁ ꢋꢇꢀꢋꢁ  
ꢋꢇꢃꢆꢁ ꢋꢇꢍꢋꢁ ꢃꢇꢋꢋꢁ ꢋꢇꢆꢆ ꢋꢇꢅ ꢋꢇꢅꢋꢁ ꢋꢇꢅꢆꢁ  
ꢋꢇꢃꢄ ꢋꢇꢌꢆ ꢋꢇꢍꢆ ꢋꢇꢄꢎ ꢋꢇꢅꢄ  
PP QRPꢁ  
PLQ  
1RWHꢁ  
ꢃꢇꢁ,QFOXGLQJꢁSODWLQJꢁWKLFNQHVVꢇꢁ  
ꢄꢇꢁ9LVLEOHꢁGHSHQGLQJꢁXSRQꢁXVHGꢁPDQXIDFWXULQJꢁWHFKQRORJ\ꢇ  
VRWꢁꢁꢁꢈBSR  
5HIHUHQFHV  
2XWOLQHꢁ  
YHUVLRQ  
(XURSHDQꢁ  
SURMHFWLRQ  
,VVXHꢁGDWH  
,(&  
-('(&  
-(,7$  
ꢃꢋꢏꢋꢀꢏꢋꢄꢁ  
ꢃꢋꢏꢋꢀꢏꢋꢎ  
627ꢃꢃꢃꢆ  
Fig 28. Package outline SOT1115 (XSON6)  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
20 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
;621ꢃꢋꢄH[WUHPHO\ꢄWKLQꢄVPDOOꢄRXWOLQHꢄSDFNDJHꢌꢄQRꢄOHDGVꢌꢄ  
ꢃꢄWHUPLQDOVꢌꢄERG\ꢄꢂꢅꢐꢄ[ꢄꢂꢅꢐꢄ[ꢄꢐꢅꢇꢊꢄPP  
627ꢂꢆꢐꢆ  
E
ꢉꢄꢊ  
ꢉꢀîꢊ  
/
/
H
H
H
ꢉꢄꢊ  
ꢉꢈîꢊ  
$
$
'
(
WHUPLQDOꢁꢃꢁ  
LQGH[ꢁDUHD  
/
ꢋꢇꢆ  
ꢃꢁPP  
VFDOH  
'LPHQVLRQV  
8QLW  
ꢉꢃꢊ  
$
$
E
'
(
H
H
/
PD[ꢁ ꢋꢇꢅꢆ ꢋꢇꢋꢀ ꢋꢇꢄꢋꢁ ꢃꢇꢋꢆꢁ ꢃꢇꢋꢆꢁ  
ꢋꢇꢅꢆꢁ ꢋꢇꢀꢋꢁ  
ꢋꢇꢃꢆꢁ ꢃꢇꢋꢋꢁ ꢃꢇꢋꢋꢁ ꢋꢇꢆꢆ ꢋꢇꢅꢆ ꢋꢇꢅꢋꢁ ꢋꢇꢅꢆꢁ  
ꢋꢇꢃꢄ ꢋꢇꢍꢆ ꢋꢇꢍꢆ ꢋꢇꢄꢎ ꢋꢇꢅꢄ  
PP QRPꢁ  
PLQ  
1RWHꢁ  
ꢃꢇꢁ,QFOXGLQJꢁSODWLQJꢁWKLFNQHVVꢇꢁ  
ꢄꢇꢁ9LVLEOHꢁGHSHQGLQJꢁXSRQꢁXVHGꢁPDQXIDFWXULQJꢁWHFKQRORJ\ꢇ  
VRWꢁꢉꢀꢉBSR  
5HIHUHQFHV  
2XWOLQHꢁ  
YHUVLRQ  
(XURSHDQꢁ  
SURMHFWLRQ  
,VVXHꢁGDWH  
,(&  
-('(&  
-(,7$  
ꢃꢋꢏꢋꢀꢏꢋꢄꢁ  
ꢃꢋꢏꢋꢀꢏꢋꢈ  
627ꢃꢄꢋꢄ  
Fig 29. Package outline SOT1202 (XSON6)  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
21 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
13. Abbreviations  
Table 13. Abbreviations  
Acronym  
CMOS  
TTL  
Description  
Complementary Metal Oxide Semiconductor  
Transistor-Transistor Logic  
Human Body Model  
HBM  
ESD  
ElectroStatic Discharge  
Machine Model  
MM  
DUT  
Device Under Test  
14. Revision history  
Table 14. Revision history  
Document ID  
74LVC1G66 v.9  
Modifications:  
Release date  
20150115  
Data sheet status  
Change notice  
Supersedes  
Product data sheet  
-
74LVC1G66 v.8  
SOT886 (XSON6) package outline drawing modified.  
74LVC1G66 v.8  
Modifications:  
20111202  
Product data sheet  
-
74LVC1G66 v.7  
Legal pages updated.  
74LVC1G66 v.7  
74LVC1G66 v.6  
74LVC1G66 v.5  
74LVC1G66 v.4  
74LVC1G66 v.3  
74LVC1G66 v.2  
74LVC1G66 v.1  
20100730  
20070827  
20070807  
20040413  
20021115  
20020529  
20011030  
Product data sheet  
-
-
-
-
-
-
-
74LVC1G66 v.6  
74LVC1G66 v.5  
74LVC1G66 v.4  
74LVC1G66 v.3  
74LVC1G66 v.2  
74LVC1G66 v.1  
-
Product data sheet  
Product data sheet  
Product specification  
Product specification  
Product specification  
Product specification  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
22 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
15. Legal information  
15.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
15.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
15.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
23 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
15.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
16. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
74LVC1G66  
All information provided in this document is subject to legal disclaimers.  
© NXP Semiconductors N.V. 2015. All rights reserved.  
Product data sheet  
Rev. 9 — 15 January 2015  
24 of 25  
74LVC1G66  
NXP Semiconductors  
Bilateral switch  
17. Contents  
1
2
3
4
5
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits . . . . . . . . . . . . . . . . . . . . 1  
Ordering information. . . . . . . . . . . . . . . . . . . . . 1  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2  
6
6.1  
6.2  
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3  
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3  
7
8
9
Functional description . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Recommended operating conditions. . . . . . . . 4  
10  
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5  
Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
ON resistance. . . . . . . . . . . . . . . . . . . . . . . . . . 6  
ON resistance test circuit and graphs. . . . . . . . 7  
10.1  
10.2  
10.3  
11  
Dynamic characteristics . . . . . . . . . . . . . . . . . . 9  
Waveforms and test circuit . . . . . . . . . . . . . . . 10  
Additional dynamic characteristics . . . . . . . . . 12  
Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
11.1  
11.2  
11.3  
12  
13  
14  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 22  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 22  
15  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 23  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 23  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
15.1  
15.2  
15.3  
15.4  
16  
17  
Contact information. . . . . . . . . . . . . . . . . . . . . 24  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP Semiconductors N.V. 2015.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 15 January 2015  
Document identifier: 74LVC1G66  

相关型号:

74LVC1G66GV

Bilateral switch
NXP

74LVC1G66GV

Bilateral switchProduction
NEXPERIA

74LVC1G66GV,125

74LVC1G66 - Bilateral switch TSOP 5-Pin
NXP

74LVC1G66GV-Q100

SGL POLE SGL THROW SWITCH
NXP

74LVC1G66GV-Q100

Bilateral switch
NEXPERIA

74LVC1G66GV-Q100,1

74LVC1G66-Q100 - Bilateral switch TSOP 5-Pin
NXP

74LVC1G66GW

Bilateral switch
NXP

74LVC1G66GW

Bilateral switchProduction
NEXPERIA

74LVC1G66GW,125

74LVC1G66 - Bilateral switch TSSOP 5-Pin
NXP

74LVC1G66GW-Q100

Bilateral switch
NEXPERIA

74LVC1G74

Single D-type flip-flop with set and reset; positive edge trigger
NXP

74LVC1G74-Q100

Single D-type flip-flop with set and reset; positive edge trigger
NEXPERIA