933059950133 [NXP]
DIODE 0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35, HERMETIC SEALED, GLASS, SC-40, 2 PIN, Signal Diode;型号: | 933059950133 |
厂家: | NXP |
描述: | DIODE 0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35, HERMETIC SEALED, GLASS, SC-40, 2 PIN, Signal Diode 二极管 |
文件: | 总11页 (文件大小:122K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
1N914
High-speed diode
1999 May 26
Product specification
Supersedes data of 1996 Sep 03
Philips Semiconductors
Product specification
High-speed diode
1N914
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The 1N914 is a high-speed switching diode fabricated in planar technology, and
encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
• High switching speed: max. 4 ns
• Continuous reverse voltage:
max. 75 V
• Repetitive peak reverse voltage:
max. 100 V
handbook, halfpage
k
a
• Repetitive peak forward current:
MAM246
max. 225 mA.
The diode is type branded.
APPLICATIONS
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
• High-speed switching.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
100
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
−
−
−
−
V
V
75
IF
see Fig.2; note 1
75
mA
mA
IFRM
IFSM
225
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
−
−
4
A
1
A
0.5
250
+200
175
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1999 May 26
2
Philips Semiconductors
Product specification
High-speed diode
1N914
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 10 mA; see Fig.3
MAX.
UNIT
VF
IR
1
V
reverse current
see Fig.5
VR = 20 V
25
5
nA
µA
µA
pF
ns
VR = 75 V
VR = 20 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
50
4
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
8
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
4
ns
V
Vfr
forward recovery voltage
when switched from IF = 50 mA; tr = 20 ns;
see Fig.8
2.5
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
240
500
K/W
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 May 26
3
Philips Semiconductors
Product specification
High-speed diode
1N914
GRAPHICAL DATA
MGD289
MBG464
100
600
handbook, halfpage
I
F
(mA)
I
F
(mA)
400
(1)
(2)
(3)
50
200
0
0
0
0
100
200
o
1
2
T
( C)
V
(V)
amb
F
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 26
4
Philips Semiconductors
Product specification
High-speed diode
1N914
MGD006
MGD004
3
10
1.2
handbook, halfpage
handbook, halfpage
I
R
C
d
(µA)
(pF)
1.0
2
10
(1)
(2)
(3)
10
0.8
0.6
1
−1
10
−2
10
0.4
0
0
100
200
o
10
20
T ( C)
V
(V)
j
R
(1) VR = 75 V; maximum values.
(2) VR = 75 V; typical values.
(3) VR = 20 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 May 26
5
Philips Semiconductors
Product specification
High-speed diode
1N914
t
t
p
r
t
D.U.T.
10%
I
F
I
t
R
= 50 Ω
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
V
90%
R
= 50 Ω
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MGA882
t
t
t
t
p
r
input
signal
output
signal
Fig.8 Forward recovery voltage test circuit and waveforms.
6
1999 May 26
Philips Semiconductors
Product specification
High-speed diode
1N914
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
b
G
D
L
L
1
DIMENSIONS (mm are the original dimensions)
0
1
2 mm
G
D
L
b
1
UNIT
max.
min.
max.
max.
scale
mm
0.56
1.85
4.25
25.4
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
DO-35
EIAJ
97-06-09
SOD27
A24
SC-40
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 26
7
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For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1999
SCA65
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/03/pp8
Date of release: 1999 May 26
Document order number: 9397 750 05883
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1N914; High-speed
diode
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The 1N914 is a high-speed switching diode fabricated in planar technology, and encapsulated in a hermetically
sealed leaded glass SOD27 (DO-35) package.
Cross-reference
End of Life
information
Distributors Go
Here!
•
Features
●
●
●
●
●
Hermetically sealed leaded glass SOD27 (DO-35) package
High switching speed: max. 4 ns
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 100 V
Repetitive peak forward current: max. 225 mA.
Applications
●
High-speed switching.
Datasheet
Type number Title
Publication release Datasheet status
date
Page
count
File size Datasheet
(kB)
(Earlier versions)
1N914
High-speed 26-May-99
diode
Product specification 8
57
Download
Parametrics
Type
number
Package VR
IF(AV)
IFSM
VFmax(mV)
CD
Configuration trr
max(ns)
IFRM(mA)
225
max(V) max.(mA) max.(A)
max.(pF)
SOD27
(DO-35,
SC-40)
1N914
75
75
75
75
75
75
4
4
4
1000@IF=10mA 4
1000@IF=10mA 4
1000@IF=10mA 4
1
1
1
4
SOD27
(DO-35,
SC-40)
1N914A
1N914B
4
4
225
SOD27
(DO-35,
SC-40)
225
Products, packages, availability and ordering
Type
North
Ordering code
Marking/Packing
Package Device status Buy online
Discretes packing
number American (12NC)
info
type
number
Standard Marking *
SOD27
1N914
1N914 T/R
9330 599 50113 Reel Pack, Axial,
Standard
Full production
Full production
Full production
Full production
Full production
Full production
Full production
Full production
Full production
(DO-35; SC-
40)
-
Standard Marking *
9330 599 50133 Ammopack, Axial,
52mm
SOD27
(DO-35; SC-
40)
Standard Marking *
9330 599 50143 Ammopack, Axial,
26mm
SOD27
-
(DO-35; SC-
40)
Standard Marking *
9330 767 40113 Reel Pack, Axial,
Standard
SOD27
1N914A
T/R
1N914A
(DO-35; SC-
40)
-
Standard Marking *
9330 767 40133 Ammopack, Axial,
52mm
SOD27
(DO-35; SC-
40)
Standard Marking *
9330 767 40143 Ammopack, Axial,
26mm
SOD27
-
(DO-35; SC-
40)
Standard Marking *
9330 296 10113 Reel Pack, Axial,
Standard
SOD27
1N914B
T/R
1N914B
(DO-35; SC-
40)
-
Standard Marking *
9330 296 10133 Ammopack, Axial,
52mm
SOD27
(DO-35; SC-
40)
Standard Marking *
9330 296 10143 Ammopack, Axial,
26mm
SOD27
-
(DO-35; SC-
40)
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