933418060235 [NXP]
TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 4 PIN, FET General Purpose Small Signal;
| 型号： | 933418060235 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 4 PIN, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BSS83
MOSFET N-channel enhancement
switching transistor
April 1991
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
BSS83
DESCRIPTION
Marking code:
Symmetrical insulated-gate silicon
MOS field-effect transistor of the
N-channel enhancement mode type.
The transistor is sealed in a SOT143
envelope and features a low ON
resistance and low capacitances. The
transistor is protected against
BSS83 = M74
excessive input voltages by
integrated back-to-back diodes
between gate and substrate.
handbook, halfpage
4
3
2
d
b
s
APPLICATIONS
g
• analog and/or digital switch
• switch driver
1
Top view
MAM389
PINNING
1
2
3
4
=
=
=
=
substrate (b)
source
drain
gate
Fig.1 Simplified outline and symbol.
Note
1. Drain and source are
interchangeable.
QUICK REFERENCE DATA
Drain-source voltage
VDS
VSD
VDB
VSB
ID
max.
max.
max.
max.
max.
max.
10 V
10 V
Source-drain voltage
Drain-substrate voltage
Source-substrate voltage
Drain current (DC)
15 V
15 V
50 mA
230 mW
Total power dissipation up to Tamb = 25 °C
Gate-source threshold voltage
VDS = VGS; VSB = 0;
Ptot
>
<
0.1 V
2.0 V
VGS(th)
ID = 1 µA
Drain-source ON-resistance
VGS = 10 V; VSB = 0; ID = 0.1 mA
Feed-back capacitance
VGS = VBS = −15 V;
RDSon
<
45 Ω
VDS = 10 V; f = 1 MHz
Crss
typ.
0.6 pF
April 1991
2
Philips Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
BSS83
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
VSD
VDB
VSB
ID
max.
max.
max.
max.
max.
max.
10 V
10 V
Source-drain voltage
Drain-substrate voltage
Source-substrate voltage
Drain current (DC)
Total power dissipation up to Tamb = 25 °C(1)
Storage temperature range
Junction temperature
15 V
15 V
50 mA
230 mW
Ptot
Tstg
Tj
−65 to + 150 °C
max.
125 °C
THERMAL RESISTANCE
From junction to ambient in free air(1)
Rth j-a
=
430 K/W
April 1991
3
Philips Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
BSS83
CHARACTERISTICS
T
amb = 25 °C unless otherwise specified
Drain-source breakdown voltage
GS = VBS = −5 V; ID = 10 nA
V
V(BR)DSX
V(BR)SDX
V(BR)DBO
V(BR)SBO
IDSoff
>
>
>
>
<
<
10 V
10 V
15 V
15 V
10 nA
10 nA
Source-drain breakdown voltage
VGD = VBD = −5 V; ID = 10 nA
Drain-substrate breakdown voltage
VGB = 0; ID = 10 nA; open source
Source-substrate breakdown voltage
VGB = 0; ID = 10 nA; open drain
Drain-source leakage current
V
GS = VBS = −2 V; VDS = 6,6 V
Source-drain leakage current
GD = VBD = −2 V; VSD = 6,6 V
Forward transconductance at f = 1 kHz
DS = 10 V; VSB = 0; ID = 20 mA
V
ISDoff
V
>
10 mS
15 mS
gfs
typ.
Gate-source threshold voltage
DS = VGS; VSB = 0; ID = 1 µA
V
>
<
0,1 V
2,0 V
VGS(th)
Drain-source ON-resistance
ID = 0,1 mA;
VGS = 5 V; VSB = 0
RDSon
RDSon
<
70 Ω
45 Ω
VGS = 10 V; VSB = 0
<
VGS = 3,2 V; VSB = 6,8 V (see Fig.4)
typ.
<
80 Ω
RDSon
120 Ω
Gate-substrate zener voltages
V
DB = VSB = 0; −IG = 10 µA
VZ(1)
VZ(2)
>
>
12,5 V
12,5 V
VDB = VSB = 0; +IG = 10 µA
Capacitances at f = 1 MHz
VGS = VBS = −15 V; VDS = 10 V
Feed-back capacitance
Input capacitance
Crss
Ciss
Coss
typ.
typ.
typ.
0,6 pF
1,5 pF
1,0 pF
Output capacitance
Switching times (see Fig.2)
VDD = 10 V; Vi = 5 V
ton
toff
typ.
typ.
1,0 ns
5,0 ns
Note
1. Device mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm.
April 1991
4
Philips Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
BSS83
Pulse generator:
Ri
tr
=
<
<
=
<
50 Ω
0,5 ns
1,0 ns
20 ns
tf
tp
δ
0,01
90%
90%
0.1 µF
50 Ω
INPUT
V
V
DD
o
10%
10%
630 Ω
t
t
f
r
t
t
on
off
T.U.T
V
i
90%
90%
50 Ω
OUTPUT
MBK297
10%
10%
MBK296
Fig.2 Switching times test circuit and input and output waveforms.
MDA250
MDA251
60
1.2
handbook, halfpage
handbook, halfpage
I
V
= 4.5 V
I
D
V
= 10 V
5 V
4 V 3.2 V
D
GS
GS
(mA)
(mA)
3 V
4 V
40
0.8
3.5 V
3 V
2.5 V
20
0.4
2 V
2 V
0
0
0
4
8
12
0
40
80
V
120
V
(V)
(mV)
DS
DSon
Tj = 25 °C.
Tj = 25 °C.
Fig.3 VSB = 0; typical values.
Fig.4 VSB = 6,8 V; typical values.
April 1991
5
Philips Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
BSS83
MDA252
MDA253
50
12
handbook, halfpage
handbook, halfpage
I
D
V
= 0 V 4 V 12 V
I
(mA)
SB
D
(mA)
40
8 V
8
30
20
4
10
0
0
0
0
1
2
3
4
1
2
3
4
V
(V)
V
(V)
GSth
GS
Tj = 25 °C.
Tj = 25 °C.
Fig.5 VDS = 10 V; VBS = 0; typical values.
Fig.6 VDS = VGS = VGS(th).
MDA254
1.2
handbook, halfpage
VGS =
10 V 5 V 4 V
I
D
3 V
2 V
(mA)
0.8
0.4
0
0
20
40
60
80
100
V
(mV)
DSon
Tj = 25 °C.
Fig.7 VSB = 0; typical values.
April 1991
6
Philips Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
BSS83
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
April 1991
7
Philips Semiconductors
Product specification
MOSFET N-channel enhancement switching transistor
BSS83
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1991
8
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