933445280113 [NXP]

DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode;


型号：	933445280113
厂家：	NXP
描述：	DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode 二极管
文件：	总9页 (文件大小：72K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

handbook, 2 columns

M3D118

BY228

Damper diode

1996 Sep 26

Product speciﬁcation

Supersedes data of May 1996

Philips Semiconductors

Product speciﬁcation

Damper diode

BY228

This package is hermetically sealed

and fatigue free as coefficients of

expansion of all used parts are

matched.

FEATURES

DESCRIPTION

• Glass passivated

Rugged glass package, using a high

temperature alloyed construction.

• High maximum operating

temperature

• Low leakage current

• Excellent stability

• Available in ammo-pack

• Also available with preformed leads

2/3 page (Datasheet)

for easy insertion.

MAM104

APPLICATIONS

• Damper diode in high frequency

horizontal deflection circuits up to

16 kHz.

Fig.1 Simplified outline (SOD64) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

1650

1500

UNIT

V_RSM

V_RRM

V_R

non-repetitive peak reverse voltage

repetitive peak reverse voltage

continuous reverse voltage

working peak forward current

−

I_FWM

T_amb= 75 °C; PCB mounting (see

Fig.4); see Fig.2

I_FRM

I_FSM

repetitive peak forward current

−

non-repetitive peak forward current

t = 10 ms half sinewave;

T_j= T_{j max}prior to surge;

V_R= V_RRMmax

T_stg

T_j

storage temperature

junction temperature

−65

+175

+150

°C

ELECTRICAL CHARACTERISTICS

T_j= 25 °C; unless otherwise speciﬁed.

SYMBOL

PARAMETER

forward voltage

CONDITIONS

MAX.

1.4

1.5

150

UNIT

V_F

I_F= 5 A; T_j= T_{j max}; see Fig.3

I_F= 5 A; see Fig.3

I_R

t_rr

reverse current

V_R= V_Rmax; T_j= 150 °C

µA

µs

reverse recovery time

when switched from I_F= 0.5 A to I_R= 1 A;

measured at I_R= 0.25 A; see Fig.6

t_fr

forward recovery time

when switched to I_F= 5 A in 50 ns;

T_j= T_{j max}; Fig.7

µs

1996 Sep 26

Philips Semiconductors

Product speciﬁcation

Damper diode

BY228

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R_{th j-tp}

R_{th j-a}

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

lead length = 10 mm

note 1

K/W

mounted as shown in Fig.5

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4.

For more information please refer to the “General Part of associated Handbook”.

1996 Sep 26

Philips Semiconductors

Product speciﬁcation

Damper diode

BY228

GRAPHICAL DATA

MBH407

MBH408

1.25

handbook, halfpage

tot

(W)

(A)

1.00

0.75

0.50

0.25

(A)

(V)

FWM

Solid line: basic high-voltage E/W modulator circuit; see Fig.8.

Dotted line: basic conventional horizontal deflection circuit; see Fig.9.

Curves include power dissipation due to switching losses.

Dotted line: T_j= 150 °C.

Solid line: T_j= 25 °C.

Fig.2 Maximum total power dissipation as a

function of working peak forward current.

Fig.3 Forward current as a function of forward

voltage; maximum values.

handbook, halfpage

3 cm

copper

3 cm

copper

MGA200

MGA204

25.4

Dimensions in mm.

Fig.5 Mounting with additional printed circuit

board for heat sink purposes.

Fig.4 Device mounted on a printed-circuit board.

1996 Sep 26

Philips Semiconductors

Product speciﬁcation

Damper diode

BY228

handbook, full pagewidth

DUT

(A)

0.5

25 V

10 Ω

1 Ω

50 Ω

0.25

0.5

(A)

MAM057

1.0

Input impedance oscilloscope: 1 MΩ, 22 pF; t_r≤ 7 ns.

Source impedance: 50 Ω; t_r≤ 15 ns.

Fig.6 Test circuit and reverse recovery time waveform and definition.

MGD600

handbook, halfpage

90%

100%

10%

Fig.7 Forward recovery time definition.

1996 Sep 26

Philips Semiconductors

Product speciﬁcation

Damper diode

BY228

APPLICATION INFORMATION

For horizontal deflection circuits, two basic applications are shown in Figs 8 and 9.

The maximum allowable total power dissipation for the diode can be calculated from the thermal resistance R_{th j-a}and

the difference between T_{j max}and T_{amb max}in the application. The maximum I_FWMcan then be taken from Fig.2.

The basic application waveforms in Fig.10 relate to the circuit in Fig.8. In the circuit in Fig.9 the forward conduction time

of the diode is shorter, allowing a higher I_FWM(see Fig.2).

handbook, halfpage

horizontal

deflection

transistor

horizontal

deflection

transistor

handbook, halfpage

+ (E-W)

MBE934

MBE935

D1 = BY228.

Fig.8 Application in basic high-voltage E/W

modulator circuit.

Fig.9 Application in basic horizontal deflection

circuit.

handbook, full pagewidth

FRM

FWM

time

RRM

time

MCD430 - 1

Fig.10 Basic application waveforms.

1996 Sep 26

Philips Semiconductors

Product speciﬁcation

Damper diode

BY228

PACKAGE OUTLINE

handbook, full pagewidth

1.35

max

4.5

max

MBC049

28 min

5.0 max

28 min

Dimensions in mm.

The marking band indicates the cathode.

Fig.11 SOD64.

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1996 Sep 26

Philips Semiconductors: Product information on BY228, Damper diode

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BY228 Damper diode

26-Sep-96

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