933667660113 [NXP]
DIODE 0.55 A, 7500 V, SILICON, SIGNAL DIODE, Signal Diode;
| 型号： | 933667660113 |
| 厂家： | 
NXP |
| 描述： | DIODE 0.55 A, 7500 V, SILICON, SIGNAL DIODE, Signal Diode 局域网 二极管 |
| 文件： | 总9页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BYX90G
High-voltage soft-recovery
controlled avalanche rectifier
1996 Sep 26
Product specification
Supersedes data of June 1996
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
The package is designed to be used
in an insulating medium such as
resin, oil or SF6 gas.
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass package, using a high
temperature alloyed construction.
• High maximum operating
temperature
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
• Low leakage current
• Excellent stability
• Soft-recovery switching
characteristics
• Guaranteed avalanche energy
absorption capability.
handbook, halfpage
k
a
MSA480
APPLICATIONS
• High-voltage rectification at high
frequencies
The cathode is marked by a black band on the body.
• Sub-component for very high
voltage rectifiers, for example, in
X-ray and radar equipment.
Fig.1 Simplified outline (SOD83A) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
repetitive peak reverse voltage
crest working reverse voltage
average forward current
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VRWM
IF(AV)
−
−
−
7.5 kV
6
kV
averaged over any 20 ms period;
Toil = 45 °C; see Fig.2;
see also Fig.3
550
mA
IFRM
IFSM
repetitive peak forward current
−
−
5
A
A
non-repetitive peak forward current
t = 10 ms half sinewave; Tj = Tj max
20
prior to surge; VR = VRWMmax
see Fig.4
;
PRSM
non-repetitive peak reverse power
dissipation
t = 10 µs; triangular pulse;
Tj = Tj max prior to surge
−
5
kW
Tstg
Tj
storage temperature
junction temperature
−65
−65
+165
+165
°C
°C
1996 Sep 26
2
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 2 A; see Fig.5
MIN.
TYP.
MAX.
14.5
−
UNIT
VF
−
−
−
V
V(BR)R
reverse avalanche
breakdown voltage
IR = 0.1 mA
8
kV
IR
trr
reverse current
VR = VRWMmax; Tj = Tj max
−
−
−
−
50
µA
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.7
350
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Rth j-o
thermal resistance from junction to oil
note 1; see also Fig.6
20
Note
1. For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
GRAPHICAL DATA
MBH403
600
handbook, halfpage
MBH404
6
handbook, halfpage
I
F(AV)
a = 3
2.5
2
(mA)
P
(W)
400
4
1.57
1.42
200
2
0
0
100
200
0
0
T
(°C)
oil
200
400
600
I
(mA)
F(AV)
a = 1.57; δ = 0.5; VR = VRWMmax
.
a = IF(RMS)/IF(AV); δ = 0.5; VR = VRWMmax
.
Fig.2 Maximum permissible average forward
current as a function of oil temperature
(including losses due to reverse leakage).
Fig.3 Maximum steady state power dissipation
(forward plus leakage losses) as a function
of average forward current.
MBH405
MBH406
20
6
handbook, halfpage
handbook, halfpage
I
F
(A)
I
FSM
(A)
4
10
2
0
1
10
−2
−1
2
0
8
16
24
10
1
10
10
V
(V)
F
duration (s)
50 Hz half sinewave current burst.
Tj = 165 °C prior to surge.
Dotted lines: Tj = 165 °C.
Solid line: Tj = 25 °C.
VR = VRWMmax
.
Fig.4 Maximum non-repetitive peak forward
current as a function of burst duration.
Fig.5 Forward current as a function of maximum
forward voltage.
1996 Sep 26
4
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
MBH391
2
10
handbook, halfpage
Z
th
(K/W)
10
1
10
−2
−1
2
10
1
10
10
time (s)
Fig.6 Thermal impedance in oil as a function of
time.
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.7 Test circuit and reverse recovery time waveform and definition.
5
1996 Sep 26
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
APPLICATION INFORMATION
Typical 3-phase bridge application information
MBH414
6
handbook, halfpage
I
bridge
(A)
handbook, halfpage
I
bridge
4
MBH415
2
T
0
10
1
2
3
4
10
10
10
T (ms)
Fig.8 Maximum permissible output current in a 3-phase rectifier bridge with a minimum time between exposures
of 20 s; Toil = 50 °C.
1996 Sep 26
6
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
MBH416
5
I
bridge
(I
)
FRM
(A)
4
δ = 10%
20%
3
2
1
0
40%
60%
80%
100%
0
0.25
0.5
0.75
1
1.25
t
(s)
1.5
p
handbook, halfpage
I
bridge
t
p
t
δ = t /t
p rep
× 100%
rep
exposure
time (T)
time between
MBH417
exposures >20 s
Fig.9 Maximum current through a 3-phase bridge rectifier versus pulse duration; exposure time T = 1 s;
Toil = 50 °C.
1996 Sep 26
7
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
MBH418
5
I
bridge
(I
)
FRM
(A)
4
δ = 10%
3
2
1
0
20%
40%
60%
80%
100%
0
0.5
1
1.5
2
t
(s)
p
handbook, halfpage
I
bridge
t
p
t
δ = t /t
× 100%
p rep
rep
exposure
time (T)
time between
MBH417
exposures >20 s
Fig.10 Maximum current through a 3-phase bridge rectifier versus pulse duration; exposure time T = 3 s;
Toil = 50 °C.
1996 Sep 26
8
Philips Semiconductors
Product specification
High-voltage soft-recovery
controlled avalanche rectifier
BYX90G
PACKAGE OUTLINE
1.35
max
27 mm
4.5
max
30.7 min
7.5 max
30.7 min
MSA219 - 2
Dimensions in mm.
The marking band indicates the cathode.
Fig.11 SOD83A.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 26
9
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