933744380127 [NXP]
DIODE 5 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, SC-46, 3 PIN, Rectifier Diode;
| 型号： | 933744380127 |
| 厂家： | 
NXP |
| 描述： | DIODE 5 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, SC-46, 3 PIN, Rectifier Diode |
| 文件： | 总5页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYT28 series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
VR = 300 V/ 400 V/ 500 V
a1
1
a2
3
VF ≤ 1.05 V
IO(AV) = 10 A
trr ≤ 60 ns
k
2
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
PIN
DESCRIPTION
cathode
anode
cathode
tab
1
2
The BYT28 series is supplied in the
tab
conventional
leaded
SOT78
(TO220AB) package.
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
BYT28
-300
300
300
-400
400
400
-500
500
500
VRRM
VR
Repetitive peak reverse voltage
Continuous reverse voltage
-
-
V
V
Tmb ≤ 147˚C
IO(AV)
IFSM
Average rectified output current square wave; δ = 0.5;
-
10
A
(both diodes conducting)1
Non-repetitive peak forward
current per diode.
Tmb ≤ 115 ˚C
t = 10 ms
t = 8.3 ms
-
-
50
55
A
A
sinusoidal; with reapplied
VRRM(max)
Tstg
Tj
Storage temperature
Operating junction temperature
-40
-
150
150
˚C
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Thermal resistance junction to per diode
-
-
-
-
-
60
4.5
3.0
-
K/W
K/W
K/W
heatsink
both diodes conducting
Rth j-a
Thermal resistance junction to in free air.
ambient
1 Neglecting switching and reverse current losses.
October 1998
1
Rev 1.400
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYT28 series
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
IR
Forward voltage
IF = 5 A; Tj = 150˚C
IF = 10 A
-
-
-
-
-
0.95
1.30
2.0
10
1.05
1.40
10
V
V
Reverse current
VR = VRRM
µA
µA
nC
VR = VRRM; Tj = 100 ˚C
IF = 2 A to VR ≥ 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs
200
60
Qs
trr
Reverse recovery charge
Reverse recovery time
50
-
-
-
50
2.0
2.5
60
3.0
-
ns
A
Irrm
Vfr
Peak reverse recovery current IF = 5 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
Forward recovery voltage
IF = 1 A; dIF/dt = 10 A/µs
V
PF / W
9
Tmb(max) / C
D = 1.0
dI
F
109.5
114
I
Vo = 0.945 V
F
Rs = 0.021 Ohms
8
7
6
5
4
3
2
1
0
dt
118.5
t
0.5
123
rr
127.5
time
0.2
132
0.1
t
T
p
136.5
141
tp
I
D =
Q
s
100%
10%
t
145.5
150
I
T
I
R
rrm
0
1
2
3
4
IF(AV) / A
5
6
7
8
Fig.1. Definition of trr, Qs and Irrm
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square wave where IF(AV) =IF(RMS) x √D.
Tmb(max) / C
a = 1.57
PF / W
I
123
6
5
4
3
2
1
0
F
F
Vo = 0.945 V
Rs = 0.021 Ohms
127.5
132
1.9
2.2
2.8
time
136.5
4
V
141
V
145.5
150
fr
V
F
0
1
2
3
4
5
IF(AV) / A
time
Fig.2. Definition of Vfr
Fig.4. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV)
.
October 1998
2
Rev 1.400
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYT28 series
Qs / nC
trr / ns
1000
1000
100
IF=5 A
1A
5 A
100
10
IF = 2 A
10
Tj = 25 C
Tj = 100 C
1
1
100
1
10
dIF/dt (A/us)
1.0
10
100
-dIF/dt (A/us)
Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode
Fig.8. Maximum Qs at Tj = 25˚C; per diode.
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
10
1
IF= 5 A
1
0.1
IF=1A
0.1
p
t
p
t
P
0.01
D
D =
T
Tj = 25 C
Tj = 100 C
t
T
0.01
0.001
1us
10us 100us 1ms
10ms 100ms
1s
10s
10
100
1
pulse width, tp (s)
-dIF/dt (A/us)
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per
diode.
Fig.9. Transient thermal impedance per diode
Zth = f(tp)
IF / A
15
Tj=150C
Tj=25C
10
max
5
typ
0
0.5
1.5
0
1
VF / V
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
October 1998
3
Rev 1.400
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYT28 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.10. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
4
Rev 1.400
Philips Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYT28 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
5
Rev 1.400
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