933785320113 [NXP]
DIODE 0.6 A, 1600 V, SILICON, SIGNAL DIODE, Signal Diode;
| 型号： | 933785320113 |
| 厂家： | 
NXP |
| 描述： | DIODE 0.6 A, 1600 V, SILICON, SIGNAL DIODE, Signal Diode 二极管 |
| 文件： | 总7页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BYX10G
Rectifier
1996 May 24
Product specification
Philips Semiconductors
Product specification
Rectifier
BYX10G
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
Rugged glass package, using a high
temperature alloyed construction.
• High maximum operating
temperature
• Low leakage current
• Excellent stability
k
a
• Available in ammo-pack.
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
non-repetitive peak reverse voltage
repetitive peak reverse voltage
crest working reverse voltage
average forward current
CONDITIONS
MIN.
MAX.
UNIT
VRSM
VRRM
VRWM
IF(AV)
−
−
−
−
1600
1600
800
V
V
V
A
1.2
Ttp = 50 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
−
−
0.6
25
A
A
T
amb = 60 °C; PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRWMmax
Tstg
Tj
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
see Fig.5
1996 May 24
2
Philips Semiconductors
Product specification
Rectifier
BYX10G
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IF = 2 A; Tj = Tj max; see Fig.6
IF = 2 A; see Fig.6
MIN.
TYP.
MAX.
1.5
1.5
1
UNIT
VF
forward voltage
−
−
−
−
−
−
−
−
−
3
V
V
IR
reverse current
µA
µA
µs
VR = VRWMmax; see Fig.7
200
−
VR = VRWMmax; Tj = 150 °C; see Fig.7
trr
reverse recovery time
diode capacitance
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.10
Cd
−
30
−
VR = 0 V; f = 1 MHz; see Fig.8
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
K/W
100
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.
1996 May 24
3
Philips Semiconductors
Product specification
Rectifier
BYX10G
GRAPHICAL DATA
MBG040
MBH392
1.0
1.6
handbook, halfpage
handbook, halfpage
I
F(AV)
I
F(AV)
(A)
(A)
0.8
1.2
0.6
0.4
0.2
0.8
0.4
0
0
0
40
80
120
160
T
200
(°C)
0
40
80
120
160
200
( C)
o
T
amb
tp
a = 1.57; VR = VRWMmax; δ = 0.5.
a = 1.57; VR = VRWMmax; δ = 0.5.
Lead length 10 mm.
Device mounted as shown in Fig.9.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC737
MBH393
200
1.6
handbook, halfpage
handbook, halfpage
a = 3 2.5
2
P
(W)
1.57
1.42
T
j
(°C)
1.2
0.8
0.4
100
0
0
0
0
400
800
1200
0.2
0.4
0.6
0.8
I
1
V
(V)
R
(A)
F(AV)
a = IF(RMS)/IF(AV); VR = VRWMmax; δ = 0.5.
Solid line = VR.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Dotted line = VRWM; δ = 0.5.
Fig.5 Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 24
4
Philips Semiconductors
Product specification
Rectifier
BYX10G
MBG049
MGC738
3
6
10
handbook, halfpage
handbook, halfpage
I
F
(A)
I
R
(µA)
5
4
3
2
10
10
2
1
0
0
1
0
1.5
3
40
80
120
160
T ( C)
200
V
(V)
F
o
j
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
VR = VRWMmax
.
Fig.6 Forward current as a function of forward
voltage; maximum values.
Fig.7 Reverse current as a function of junction
temperature; maximum values.
MBG030
2
10
handbook, halfpage
50
handbook, halfpage
25
C
d
(pF)
7
50
10
2
3
1
3
2
1
10
10
10
V
(V)
R
MGA200
f = 1 MHz; Tj = 25 °C.
Dimensions in mm.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 May 24
5
Philips Semiconductors
Product specification
Rectifier
BYX10G
I
F
DUT
(A)
+
0.5
t
rr
25 V
10 Ω
1 Ω
50 Ω
0
0.25
0.5
t
I
R
(A)
MAM057
1.0
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.10 Test circuit and reverse recovery time waveform and definition.
1996 May 24
6
Philips Semiconductors
Product specification
Rectifier
BYX10G
PACKAGE OUTLINE
k
a
0.81
max
3.81
max
4.57
max
MBC880
28 min
28 min
Dimensions in mm.
Fig.11 SOD57.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 24
7
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