933834100215 [NXP]

DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, 3 PIN, Signal Diode;
933834100215
型号: 933834100215
厂家: NXP    NXP
描述:

DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, 3 PIN, Signal Diode

光电二极管
文件: 总8页 (文件大小:66K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
age  
BAS70 series  
Schottky barrier (double) diodes  
Product specification  
2001 Oct 11  
Supersedes data of 1999 Jun 01  
Philips Semiconductors  
Product specification  
Schottky barrier (double) diodes  
BAS70 series  
FEATURES  
PINNING  
Low forward current  
DESCRIPTION  
SOT23  
BAS70-04 BAS70-05  
High breakdown voltage  
Guard ring protected  
SOT143B  
PIN  
BAS70  
BAS70-06  
BAS70-07  
Small plastic SMD package  
Low diode capacitance.  
(see Fig.1b) (see Fig.1c) (see Fig.1d) (see Fig.1e) (see Fig.2)  
1
2
3
4
a1  
n.c.  
k1  
a1  
k2  
a1  
a2  
k1  
k2  
k1  
k2  
a2  
a1  
APPLICATIONS  
k1, a2  
k1, k2  
a1, a2  
Ultra high-speed switching  
Voltage clamping  
Protection circuits.  
3
3
1
DESCRIPTION  
Planar Schottky barrier diodes with an  
integrated guard ring for stress  
protection. Single diodes and double  
diodes with different pinning are  
available.  
2
MGC485  
c. BAS70-04  
1
2
3
1
Top view  
MGC482  
The diodes BAS70, BAS70-04,  
BAS70-05 and BAS70-06 are  
encapsulated in a SOT23 small  
plastic SMD package. The BAS70-07  
is encapsulated in a SOT143B small  
plastic SMD package.  
2
a. Simplified outline SOT23.  
MGC484  
d. BAS70-05.  
3
3
MARKING  
2
n.c.  
1
2
1
MARKING  
TYPE NUMBER  
MGC483  
MGC486  
CODE(1)  
b. BAS70 single diode.  
e. BAS70-06.  
BAS70  
73  
74  
75  
76  
77  
BAS70-04  
BAS70-05  
BAS70-06  
BAS70-07  
Fig.1 Simplified outline (SOT23) and symbols.  
Note  
1.  
handbook, halfp
4
3
2
= p: Made in Hong Kong.  
= t: Made in Malaysia.  
= W: Made in China.  
4
3
2
1
1
Top view  
MAM194  
Fig.2 Simplified outline (SOT143B) BAS70-07 and symbol.  
2
2001 Oct 11  
Philips Semiconductors  
Product specification  
Schottky barrier (double) diodes  
BAS70 series  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
Per diode  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VR  
continuous reverse voltage  
continuous forward current  
repetitive peak forward current  
non-repetitive peak forward current  
storage temperature  
70  
V
IF  
70  
mA  
mA  
mA  
°C  
IFRM  
IFSM  
Tstg  
Tj  
tp 1 s; δ ≤ 0.5  
70  
tp < 10 ms  
100  
+150  
150  
+150  
65  
junction temperature  
°C  
Tamb  
operating ambient temperature  
65  
°C  
ELECTRICAL CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MAX.  
UNIT  
Per diode  
VF  
forward voltage  
see Fig.3  
IF = 1 mA  
IF = 10 mA  
IF = 15 mA  
410  
750  
1
mV  
mV  
V
IR  
reverse current  
VR = 50 V; note 1; see Fig.4  
VR = 70 V; note 1; see Fig.4  
IF = 5 mA  
100  
10  
nA  
µA  
ps  
τ
charge carrier life time (Krakauer  
method)  
100  
Cd  
diode capacitance  
f = 1 MHz; VR = 0; see Fig.6  
2
pF  
Note  
1. Pulse test: tp = 300 µs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient note 1  
CONDITIONS  
VALUE  
UNIT  
K/W  
Rth j-a  
500  
Note  
1. Refer to SOT23 or SOT143B standard mounting conditions.  
2001 Oct 11  
3
Philips Semiconductors  
Product specification  
Schottky barrier (double) diodes  
BAS70 series  
GRAPHICAL DATA  
MRA803  
MRA805  
2
2
10  
10  
I
R
I
(1)  
F
(µA)  
(mA)  
10  
10  
(2)  
(3)  
1
1
1
10  
1
10  
2
3
10  
(1)  
(2) (3) (4)  
2
10  
10  
0
0.2  
0.4  
0.6  
0.8  
1
0
20  
40  
60  
80  
V
(V)  
V
(V)  
R
F
(1) Tamb = 125 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
(4) Tamb = 40 °C.  
(1) Tamb = 150 °C.  
(2) Tamb = 85 °C.  
(3) Tamb = 25 °C.  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
Fig.4 Reverse current as a function of reverse  
voltage; typical values.  
MRA804  
MGL762  
3
10  
2
C
d
r
dif  
(pF)  
()  
1.5  
2
10  
1
0.5  
0
10  
1
10  
1  
2
0
20  
40  
60  
80  
1
10  
10  
I
(mA)  
V
(V)  
F
R
f = 10 kHz.  
f = 1 MHz.  
Fig.5 Differential forward resistance as a function  
of forward current; typical values.  
Fig.6 Diode capacitance as a function of reverse  
voltage; typical values.  
2001 Oct 11  
4
Philips Semiconductors  
Product specification  
Schottky barrier (double) diodes  
BAS70 series  
PACKAGE OUTLINES  
Plastic surface mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M  
B
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
97-02-28  
99-09-13  
SOT23  
TO-236AB  
2001 Oct 11  
5
Philips Semiconductors  
Product specification  
Schottky barrier (double) diodes  
BAS70 series  
Plastic surface mounted package; 4 leads  
SOT143B  
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max  
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1  
0.9  
0.48  
0.38  
0.88  
0.78  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
0.1  
mm  
1.9  
1.7  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT143B  
2001 Oct 11  
6
Philips Semiconductors  
Product specification  
Schottky barrier (double) diodes  
BAS70 series  
DATA SHEET STATUS  
PRODUCT  
DATA SHEET STATUS(1)  
STATUS(2)  
DEFINITIONS  
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Changes will be  
communicated according to the Customer Product/Process Change  
Notification (CPCN) procedure SNW-SQ-650A.  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes, without notice, in the  
products, including circuits, standard cells, and/or  
software, described or contained herein in order to  
improve design and/or performance. Philips  
Semiconductors assumes no responsibility or liability for  
the use of any of these products, conveys no licence or title  
under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that  
these products are free from patent, copyright, or mask  
work right infringement, unless otherwise specified.  
Application information  
Applications that are  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2001 Oct 11  
7
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2001  
SCA73  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/06/pp8  
Date of release: 2001 Oct 11  
Document order number: 9397 750 08761  

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