933834710115 [NXP]
DIODE 75 V, SILICON, SIGNAL DIODE, Signal Diode;
| 型号： | 933834710115 |
| 厂家： | 
NXP |
| 描述： | DIODE 75 V, SILICON, SIGNAL DIODE, Signal Diode 二极管 |
| 文件： | 总9页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMLL4150; PMLL4151;
PMLL4153
High-speed diodes
1996 Sep 18
Product specification
Supersedes data of April 1996
Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
FEATURES
DESCRIPTION
• Small hermetically sealed glass
SMD package
The PMLL4150, PMLL4151, PMLL4153 are high-speed switching diodes
fabricated in planar technology, and encapsulated in small hermetically sealed
glass SOD80C SMD packages.
• High switching speed: max. 4 ns
• General application
• Continuous reverse voltage:
max. 50 V
• Repetitive peak reverse voltage:
k
a
max. 75 V
handbook, 4 columns
• Repetitive peak forward current:
max. 600 mA and 450 mA
respectively.
MAM061
APPLICATIONS
Cathode indicated by black band.
• High-speed switching
• The PMLL4150 is primarily
intended for general purpose use in
computer and industrial
applications.
Fig.1 Simplified outline (SOD80C) and symbol.
• The PMLL4151 and PMLL4153 are
intended for military and industrial
applications.
1996 Sep 18
2
Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
PMLL4151
−
−
−
75
75
50
V
V
V
PMLL4153
VR
IF
continuous reverse voltage
continuous forward current
PMLL4150
see Fig.2; note 1
−
−
−
300
200
200
mA
mA
mA
PMLL4151
PMLL4153
IFRM
repetitive peak forward current
PMLL4150
−
−
−
600
450
450
mA
mA
mA
PMLL4151
PMLL4153
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t = 1 s
−
−
4
1
A
A
−
0.5
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
−
500
+200
200
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 18
3
Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3
PMLL4150
IF = 1 mA
540
660
760
820
870
−
620
740
860
920
1000
1000
550
590
670
700
810
880
mV
IF = 10 mA
IF = 50 mA
IF = 100 mA
IF = 200 mA
IF = 50 mA
IF = 0.1 mA
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
mV
PMLL4151
PMLL4153
490
530
590
620
700
740
IF = 0.25 mA
IF = 1 mA
IF = 2 mA
IF = 10 mA
IF = 50 mA
IR
reverse current
PMLL4150
VR = 50 V; see Fig.5
−
−
−
0.1 µA
0.05 µA
0.05 µA
PMLL4151
PMLL4153
IR
reverse current
PMLL4150
VR = 50 V; Tj = 150 °C; see Fig.5
−
−
−
100
µA
µA
µA
PMLL4151
50
50
PMLL4153
Cd
diode capacitance
PMLL4150
f = 1 MHz; VR = 0; see Fig.6
−
−
2.5 pF
PMLL4151
2
2
pF
pF
PMLL4153
1996 Sep 18
4
Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
trr
reverse recovery time
PMLL4150
when switched from IF = 10 mA to
IR = 1 mA; RL = 100 Ω; measured at
IR = 0.1 mA; see Fig.7
−
−
6
4
ns
when switched from IF = 10 mA to
200 mA to IR = 10 mA to 200 mA;
RL = 100 Ω; measured at IR = 0.1 × IF;
see Fig.7
ns
when switched from IF = 200 mA to
400 mA to IR = 200 mA to 400 mA;
RL = 100 Ω; measured at IR = 0.1 × IF;
see Fig.7
−
6
ns
trr
trr
tfr
reverse recovery time
PMLL4151
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
−
−
4
2
ns
ns
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
reverse recovery time
PMLL4153
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
−
−
4
2
ns
ns
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
forward recovery time
when switched to IF = 200 mA; tr = 0.4 ns;
measured at VF = 1 V; see Fig.8
−
10
ns
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
CONDITIONS
VALUE
UNIT
300
350
K/W
K/W
Rth j-a
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 18
5
Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
GRAPHICAL DATA
MBG456
400
handbook, halfpage
MBG464
600
I
F
handbook, halfpage
(mA)
I
F
300
(mA)
(1)
400
200
(1)
(2)
(3)
(2)
200
100
0
o
0
100
200
T
( C)
0
amb
0
1
2
V
(V)
F
Device mounted on an FR4 printed-circuit board.
(1) PMLL4150.
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
(2) PMLL4151; PMLL4153.
Fig.0 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 18
6
Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
MGD006
MGD004
3
10
1.2
handbook, halfpage
handbook, halfpage
I
R
C
d
(µA)
(pF)
1.0
2
10
(1)
(2)
(3)
10
0.8
0.6
0.4
1
−1
10
−2
10
0
100
200
o
0
10
20
T ( C)
V
(V)
j
R
(1) VR = 75 V; maximum values.
(2) VR = 75 V; typical values.
(3) VR = 20 V; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 18
7
Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
t
t
p
r
t
D.U.T.
10%
I
F
I
t
R
= 50 Ω
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) The value of IR is dependent on product type.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
I
1.0
90%
V
F
R
= 50 Ω
(V)
S
OSCILLOSCOPE
V
fr
D.U.T.
R = 50 Ω
i
10%
MBH181
t
t
t
fr
t
t
p
r
input
signal
output
signal
Input signal: forward pulse rise time tr = 0.4 ns; forward pulse duration tp = 100 ns; duty factor δ = 0.01.
Fig.8 Forward recovery time test circuit and waveforms.
8
1996 Sep 18
Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
PACKAGE OUTLINE
1.60
O
1.45
0.3
0.3
3.7
MBA390 - 2
3.3
Dimensions in mm.
Fig.9 SOD80C.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 18
9
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