933912900215 [NXP]
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, SMD, SST3, 3 PIN, FET RF Small Signal;
| 型号： | 933912900215 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, SMD, SST3, 3 PIN, FET RF Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF545A; BF545B; BF545C
N-channel silicon junction
field-effect transistors
Product specification
1996 Jul 29
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
FEATURES
• Low leakage level (typ. 500 fA)
• High gain
• Low cut-off voltage (max. 2.2 V for BF545A).
handbookage
2
1
APPLICATIONS
• Impedance converters in e.g. electret microphones and
infra-red detectors
d
g
s
• VHF amplifiers in oscillators and mixers.
3
Top view
DESCRIPTION
MAM036
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
PINNING - SOT23
Marking codes:
BF545A: M65.
BF545B: M66.
BF545C: M67.
PIN
1
SYMBOL
DESCRIPTION
source
s
d
g
2
drain
gate
Fig.1 Simplified outline and symbol.
3
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
±30
UNIT
−
V
VGSoff
IDSS
gate-source cut-off voltage
drain current
ID = 1 µA; VDS = 15 V
−0.4
−7.8
V
VGS = 0; VDS = 15 V
BF545A
2
6.5
15
mA
mA
mA
mW
mS
BF545B
6
BF545C
12
−
25
Ptot
yfs
total power dissipation
forward transfer admittance
up to Tamb = 25 °C
250
6.5
VGS = 0; VDS = 15 V
3
1996 Jul 29
2
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
±30
UNIT
−
−
−
−
−
V
V
V
VGSO
VGDO
IG
gate-source voltage
open drain
−30
−30
10
gate-drain voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
open source
mA
mW
°C
Ptot
Tstg
Tj
up to Tamb = 25 °C; note 1
250
150
150
−65
operating junction temperature
−
°C
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
MBB688
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0
50
100
150
200
(°C)
T
amb
Fig.2 Power derating curve.
1996 Jul 29
3
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to ambient; note 1
VALUE
UNIT
Rth j-a
500
K/W
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
V(BR)GSS
VGSoff
PARAMETER
CONDITIONS
MIN.
−30
TYP.
MAX.
UNIT
gate-source breakdown voltage IG = −1 µA; VDS = 0
−
−
V
gate-source cut-off voltage
BF545A
ID = 200 µA; VDS = 15 V
−0.4
−1.6
−3.2
−0.4
−
−
−
−
−2.2
−3.8
−7.8
−7.5
V
V
V
V
BF545B
BF545C
ID = 1 µA; VDS = 15 V
IDSS
drain current
BF545A
VGS = 0; VDS = 15 V
2
−
−
−
6.5
mA
mA
mA
pA
BF545B
6
15
BF545C
12
−
25
IGSS
gate leakage current
VGS = −20 V; VDS = 0
−0.5
−1000
−100
VGS = −20 V; VDS = 0;
Tj = 125 °C
−
−
nA
yfs
forward transfer admittance
VGS = 0; VDS = 15 V
VGS = 0; VDS = 15 V
3
−
6.5
mS
yos
common source output
admittance
−
40
−
µS
1996 Jul 29
4
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
DYNAMIC CHARACTERISTICS
T
amb = 25 °C; unless otherwise specified.
SYMBOL PARAMETER
Cis input capacitance
CONDITIONS
TYP.
1.7
UNIT
pF
VDS = 15 V; VGS = −10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
VDS = 15 V; VGS = −10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
3
pF
pF
pF
µS
µS
mS
mS
µS
µS
µS
µS
Crs
gis
reverse transfer capacitance
0.8
0.9
15
300
2
common source input conductance VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
gfs
grs
gos
common source transfer
conductance
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
1.8
−6
−40
30
60
common source reverse
conductance
common source output
conductance
MBB467
MBB466
30
6
handbook, halfpage
handbook, halfpage
I
DSS
(mA)
Y
fs
(mS)
20
5
10
0
0
4
−4
−2
−6
V
−8
0
−4
−6
V
−8
(V)
−2
(V)
GSoff
GSoff
VDS = 15 V; VGS = 0; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.4 Forward transfer admittance as a
Fig.3 Drain current as a function of gate-source
cut-off voltage; typical values.
function of gate-source cut-off voltage;
typical values.
1996 Jul 29
5
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
MBB465
MBB464
80
300
handbook, halfpage
handbook, halfpage
R
DSon
(Ω)
Y
os
(µS)
200
40
100
0
0
0
0
−4
−6
−8
−2
−4
−6
V
−8
(V)
−2
V
(V)
GSoff
GSoff
VDS = 15 V; VGS = 0; Tj = 25 °C.
VDS = 100 mV; VGS = 0; Tj = 25 °C.
Fig.5 Common-source output admittance as a
function of gate-source cut-off voltage;
typical values.
Fig.6 Drain-source on-resistance as a
function of gate-source cut-off voltage;
typical values.
MBB462
MBB463
6
6
handbook, halfpage
handbook, halfpage
I
I
D
D
(mA)
(mA)
V
= 0 V
GS
4
4
−0.5 V
−1.0 V
2
0
2
0
−3
−2
−1
0
0
4
8
12
16
V (V)
GS
V
(V)
DS
Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.7 Typical output characteristics; BF545A.
Fig.8 Typical input characteristics; BF545A.
1996 Jul 29
6
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
MBB460
MBB459
16
16
handbook, halfpage
handbook, halfpage
I
I
D
D
(mA)
(mA)
VGS = 0 V
−0.5 V
12
12
−1 V
8
8
4
−1.5 V
−2 V
4
0
−2.5 V
0
−6
−4
−2
0
0
4
8
12
16
(V)
V
(V)
V
GS
DS
Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.9 Typical output characteristics; BF545B.
Fig.10 Typical input characteristics; BF545B.
MBB456
MBB457
30
30
handbook, halfpage
handbook, halfpage
I
I
D
D
(mA)
(mA)
V
= 0 V
GS
20
20
−1 V
−2 V
−3 V
10
10
−4 V
−5 V
0
−8
0
−6
−4
−2
0
0
4
8
12
16
V (V)
GS
V
(V)
DS
Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.11 Typical output characteristics; BF545C.
Fig.12 Typical input characteristics; BF545C.
1996 Jul 29
7
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
MBB461
MBB458
3
3
10
10
handbook, halfpage
handbook, halfpage
I
I
D
D
(µA)
(µA)
2
2
10
10
10
1
10
1
−1
−1
10
10
−2
−2
10
10
−3
−3
10
10
−3
−2
−1
0
−6
−4
−2
0
V
(V)
V
(V)
GS
GS
VDS = 15 V; Tj = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.13 Drain current as a function of gate-source
voltage; typical values for BF545A.
Fig.14 Drain current as a function of gate-source
voltage; typical values for BF545B.
MBB455
MBB454
2
3
−10
10
handbook, halfpage
handbook, halfpage
I
D
I
G
(µA)
(pA)
2
10
I
= 10 mA
1 mA
D
−10
10
1
−1
−1
I
GSS
−1
10
−10
0.1 mA
−2
10
−3
−2
10
−10
−8
−6
−4
−2
0
0
10
20
V
(V)
V
(V)
DG
GS
VDS = 15 V; Tj = 25 °C.
ID = 10 mA only for BF545B and BF545C; Tj = 25 °C.
Fig.15 Drain current as a function of gate-source
voltage; typical values for BF545C.
Fig.16 Gate current as a function of drain-gate
voltage; typical values.
1996 Jul 29
8
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
MBB453
MBB452
3
−10
1
handbook, halfpage
handbook, halfpage
I
GSS
(pA)
C
rs
2
−10
(pF)
−10
−1
0.5
−1
−10
0
−50
0
50
100
150
−10
−5
0
T (°C)
V
(V)
j
GS
VDS = 0; VGS = −20 V.
VDS = 15 V; Tj = 25 °C.
Fig.17 Gate current as a function of junction
temperature; typical values.
Fig.18 Reverse transfer capacitance as a function
of gate-source voltage; typical values.
MBB468
MBB451
2
10
3
handbook, halfpage
handbook, halfpage
y
is
C
(mS)
is
(pF)
10
2
b
is
1
1
0
g
is
−1
10
10
−2
10
2
3
10
10
−10
−5
0
V
(V)
f (MHz)
GS
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
VDS = 15 V; Tj = 25 °C.
Fig.20 Common-source input admittance;
typical values.
Fig.19 Typical input capacitance.
1996 Jul 29
9
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
MBB469
MBB470
2
10
10
handbook, halfpage
handbook, halfpage
y
Y
rs
fs
(mS)
(mS)
−b
1
rs
10
−1
10
g
fs
1
−g
rs
−2
10
–b
fs
–1
−3
10
10
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.21 Common-source forward transfer
admittance; typical values.
Fig.22 Common-sourcereversetransfer
admittance; typical values.
MBB471
10
handbook, halfpage
y
os
(mS)
1
b
os
−1
10
g
os
−2
10
2
3
10
10
10
f (MHz)
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.23 Common-source output admittance;
typical values.
1996 Jul 29
10
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
PACKAGE OUTLINE
3.0
2.8
B
1.9
0.150
0.090
A
M
0.2
0.55
0.45
0.95
A
2
1
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
3
1.1
max
0.48
0.38
0.1 M
A B
o
MBC846
30
max
TOP VIEW
Dimensions in mm.
Fig.24 SOT23.
1996 Jul 29
11
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF545A; BF545B; BF545C
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 29
12
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