933913910135 [NXP]

DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN, Signal Diode;


型号：	933913910135
厂家：	NXP
描述：	DIODE 0.2 A, 100 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS, SMD, 2 PIN, Signal Diode 二极管
文件：	总12页 (文件大小：58K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D238

BAS32L

High-speed diode

Product speciﬁcation

2002 Jan 23

Supersedes data of 1996 Sep 10

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS32L

FEATURES

DESCRIPTION

• Small hermetically sealed glass

SMD package

The BAS32L is a high-speed switching diode fabricated in planar technology,

and encapsulated in the small hermetically sealed glass SOD80C SMD

package.

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 100 V

handbook, 4 columns

• Repetitive peak forward current:

max. 450 mA.

MAM061

APPLICATIONS

The marking band indicates the cathode.

• High-speed switching

• Fast logic applications.

Fig.1 Simplified outline (SOD80C) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

100

UNIT

V_RRM

V_R

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

−

I_F

see Fig.2; note 1

200

450

I_FRM

I_FSM

non-repetitive peak forward current square wave; T_j= 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 1 ms

t = 1 s

−

0.5

500

+200

200

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

T_amb= 25 °C; note 1

°C

−65

−

Note

1. Device mounted on an FR4 printed-circuit board.

2002 Jan 23

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS32L

ELECTRICAL CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

forward voltage

CONDITIONS

MIN.

MAX.

UNIT

V_F

see Fig.3

I_F= 5 mA

620

750

I_F= 100 mA

−

1000

930

I_F= 100 mA; T_j= 100 °C

see Fig.5

I_R

reverse current

V_R= 20 V

−

µA

V_R= 75 V

−

V_R= 20 V; T_j= 150 °C

V_R= 75 V; T_j= 150 °C

I_R= 100 µA

−

100

−

V_(BR)R

C_d

reverse breakdown voltage

diode capacitance

100

f = 1 MHz; V_R= 0; see Fig.6

t_rr

reverse recovery time

when switched from I_F= 10 mA to

I_R= 10 mA; R_L= 100 Ω; measured

at I_R= 1 mA; see Fig.7

V_fr

forward recovery voltage

when switched from I_F= 50 mA;

−

2.5

t_r= 20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL

R_{th j-tp}

PARAMETER

thermal resistance from junction to tie-point

thermal resistance from junction to ambient note 1

CONDITIONS

VALUE

300

UNIT

K/W

R_{th j-a}

350

Note

1. Device mounted on an FR4 printed-circuit board.

2002 Jan 23

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS32L

GRAPHICAL DATA

MBG451

MBG464

300

600

handbook, halfpage

(mA)

200

400

(1)

(2)

(3)

100

200

100

200

( C)

(V)

amb

(1) T_j= 175 °C; typical values.

(2) T_j= 25 °C; typical values.

(3) T_j= 25 °C; maximum values.

Device mounted on an FR4 printed-circuit board.

Fig.2 Maximum permissible continuous forward

current as a function of ambient temperature.

Fig.3 Forward current as a function of

forward voltage.

MBG704

handbook, full pagewidth

FSM

(A)

−1

(µs)

Based on square wave currents.

T_j= 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

2002 Jan 23

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS32L

MGD006

MGD004

1.2

handbook, halfpage

(µA)

(pF)

1.0

(1)

(2)

(3)

0.8

0.6

−1

−2

0.4

100

200

T ( C)

(V)

(1) V_R= 75 V; maximum values.

(2)

V_R= 75 V; typical values.

(3) V_R= 20 V; typical values.

f = 1 MHz; T_j= 25 °C.

Fig.5 Reverse current as a function of

junction temperature.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

2002 Jan 23

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS32L

handbook, full pagewidth

D.U.T.

10%

= 50 Ω

SAMPLING

OSCILLOSCOPE

R = 50 Ω

V = V

I x R

F S

(1)

90%

MGA881

input signal

output signal

(1) I_R= 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

1 kΩ

450 Ω

90%

= 50 Ω

OSCILLOSCOPE

D.U.T.

R = 50 Ω

10%

MGA882

input

signal

output

signal

Fig.8 Forward recovery voltage test circuit and waveforms.

2002 Jan 23

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS32L

PACKAGE OUTLINE

Hermetically sealed glass surface mounted package; 2 connectors

SOD80C

(1)

DIMENSIONS (mm are the original dimensions)

2 mm

UNIT

scale

1.60

1.45

3.7

3.3

0.3

Note

1. The marking band indicates the cathode.

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-06-20

SOD80C

100H01

2002 Jan 23

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS32L

DATA SHEET STATUS

PRODUCT

STATUS⁽²⁾

DATA SHEET STATUS⁽¹⁾

DEFINITIONS

Objective data

Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data

Product data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Production

This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS

DISCLAIMERS

Short-form specification

The data in a short-form

Life support applications

These products are not

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

the use of any of these products, conveys no licence or title

under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

Application information

Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

2002 Jan 23

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS32L

NOTES

2002 Jan 23

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS32L

NOTES

2002 Jan 23

Philips Semiconductors

Product speciﬁcation

High-speed diode

BAS32L

NOTES

2002 Jan 23

Philips Semiconductors – a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales ofﬁces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

SCA74

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

613514/03/pp12

Date of release: 2002 Jan 23

Document order number: 9397 750 09264

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