933930010112 [NXP]
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power;
| 型号： | 933930010112 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power 局域网 放大器 晶体管 |
| 文件： | 总16页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF177
HF/VHF power MOS transistor
September 1992
Product specification
File under Discrete Semiconductors, SC08a
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
FEATURES
PIN CONFIGURATION
• High power gain
• Low intermodulation distortion
• Easy power control
1
4
andbook, halfpage
• Good thermal stability
• Withstands full load mismatch.
d
DESCRIPTION
g
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for industrial and military
applications in the HF/VHF frequency
range.
s
MBB072
2
3
MLA876
The transistor is encapsulated in a
4-lead, SOT121 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
Fig.1 Simplified outline and symbol.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the 'General' section for further
information.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
Product and environmental safety - toxic materials
PINNING - SOT121
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
PIN
DESCRIPTION
1
2
3
4
drain
source
gate
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
f
VDS
(V)
PL
(W)
GP
(dB)
ηD
(%)
d3
(dB)
d5
(dB)
(MHz)
SSB class-AB
28
50
50
150 (PEP)
150
> 20
> 35
< −30
< −30
CW class-B
108
typ. 19
typ. 70
−
−
September 1992
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
UNIT
−
−
−
−
110
20
V
±VGS
ID
gate-source voltage
DC drain current
V
16
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
up to Tmb = 25 °C
220
150
200
W
°C
°C
−65
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
max. 0.8 K/W
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
max. 0.2 K/W
MGP089
MRA906
2
10
300
handbook, halfpage
handbook, halfpage
I
P
D
tot
(A)
(W)
10
200
(1)
(2)
(1)
(2)
1
100
−1
0
10
2
3
1
10
10
10
0
50
100
150
V
(V)
T
(°C)
DS
h
(1) Current is this area may be limited by RDS(on)
.
(1) Short-time operation during mismatch.
(2) Continuous operation.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
ID = 50 mA; VGS = 0
MIN. TYP. MAX. UNIT
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
110
−
−
−
−
−
−
−
V
IDSS
VGS = 0; VDS = 50 V
±VGS = 20 V; VDS = 0
ID = 50 mA; VDS = 10 V
2.5
1
mA
µA
V
IGSS
−
VGS(th)
∆VGS
2
4.5
100
gate-source voltage difference of ID = 50 mA; VDS = 10 V
matched pairs
−
mV
gfs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
ID = 5 A; VDS = 10 V
4.5
−
6.2
0.2
25
−
S
RDS(on)
IDSX
Cis
ID = 5 A; VGS = 10 V
0.3
−
Ω
VGS = 10 V; VDS = 10 V
−
A
VGS = 0; VDS = 50 V; f = 1 MHz
VGS = 0; VDS = 50 V; f = 1 MHz
VGS = 0; VDS = 50 V; f = 1 MHz
−
480
190
14
−
pF
pF
pF
Cos
output capacitance
−
−
Crs
feedback capacitance
−
−
MGP091
MGP090
30
0
handbook, halfpage
handbook, halfpage
T.C.
I
(mV/K)
D
(A)
−1
20
−2
−3
−4
−5
10
0
−2
−1
0
5
10
15
10
10
1
10
V
(V)
I
(A)
GS
D
VDS = 10 V; valid for Th = 25 to 70 °C.
VDS = 10 V.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MBK408
1200
MGP092
handbook, halfpage
400
handbook, halfpage
C
(pF)
R
DS(on)
(mΩ)
800
400
300
C
is
200
C
os
0
0
100
0
20
40
60
V
(V)
50
100
150
DS
T (°C)
j
ID = 5 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
function of junction temperature, typical
values.
MGP093
300
handbook, halfpage
C
rs
(pF)
200
100
0
0
10
20
30
40
50
(V)
V
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0 Ω unless otherwise specified.
RF performance in SSB operation in a common source class-AB circuit.
f1 = 28.000 MHz; f2 = 28.001 MHz.
d3
(dB)
(note 1)
d5
(dB)
(note 1)
MODE OF
OPERATION
f
VDS
(V)
IDQ
(A)
PL
(W)
GP
(dB)
ηD
(%)
(MHz)
SSB, class-AB
28
50
0.7
20 to 150
(PEP)
> 20
typ. 35
> 35
typ. 40
< −30
typ. −35
< −30
typ. −38
Note
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
Ruggedness in class-AB operation
The BLF177 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
VDS = 50 V; f = 28 MHz at rated output power.
MGP094
MGP096
60
30
handbook, halfpage
handbook, halfpage
η
G
p
D
(%)
(dB)
40
20
20
10
0
0
0
0
100
200
100
200
P
(W) PEP
P
(W) PEP
L
L
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.10 Two tone efficiency as a function of load
power, typical values.
Fig.9 Power gain as a function of load power,
typical values.
September 1992
6
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP097
MGP098
−20
−20
handbook, halfpage
handbook, halfpage
d
5
d
3
(dB)
(dB)
−30
−30
−40
−50
−60
−40
−50
−60
0
100
200
0
100
200
P
(W) PEP
P
(W) PEP
L
L
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
RGS = 5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.11 Third order intermodulation distortion as a
function of load power, typical values.
Fig.12 Fifth order intermodulation distortion as a
function of load power, typical values.
C9
C12
C14
C15
L3
D.U.T.
L6
output
50 Ω
C3
C1
L2
L1
input
50 Ω
C10 C11
C2
C4
L4
R1
R3
R2
C5
C13
C6
L5
C7
R5
C8
R4
+V
G
+V
MGP095
D
f = 28 MHz.
Fig.13 Test circuit for class-AB operation.
September 1992
7
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
List of components (class-AB test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C4, C13, C14 film dielectric trimmer
7 to 100 pF
56 pF
2222 809 07015
C2
multilayer ceramic chip capacitor
(note 1)
C3, C11
multilayer ceramic chip capacitor
(note 1)
62 pF
C5, C6
C7
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
100 nF
2222 852 47104
2222 852 47104
2222 852 47103
2222 852 47104
3 × 100 nF
10 nF
C5
C7
3 × 100 nF
2.2 µF, 63 V
20 pF
C8
C9, C10
multilayer ceramic chip capacitor
(note 1)
C12
C15
L1
multilayer ceramic chip capacitor
(note 1)
100 pF
150 pF
133 nH
multilayer ceramic chip capacitor
(note 1)
5 turns enamelled 0.7 mm copper
wire
length 4.5 mm;
int. dia. 6 mm;
leads 2 × 5 mm
L2, L3
L4
stripline (note 2)
41.1 Ω
length 13 × 6 mm
7 turns enamelled 1.5 mm copper
wire
236 nH
length 12.5 mm;
int. dia. 8 mm;
leads 2 × 5 mm
L5
L6
grade 3B Ferroxcube wideband HF
choke
4312 020 36642
5 turns enamelled 2 mm copper
wire
170 nH
length 11.5 mm;
int. dia. 8 mm;
leads 2 × 5 mm
R1, R2
R2
1 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
1 W metal film resistor
10 Ω
10 kΩ
1 MΩ
10 kΩ
R3
R5
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1.6 mm.
September 1992
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP099
MGP100
10
30
handbook, halfpage
handbook, halfpage
Z
i
G
p
(Ω)
(dB)
r
i
5
0
20
10
x
i
−5
0
0
0
10
20
30
10
20
30
f (MHz)
f (MHz)
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
Class-AB operation; VDS = 50 V; IDQ = 0.7 A;
PL = 150 W (PEP); RGS = 6.25 Ω; RL = 6.25 Ω.
PL = 150 W (PEP); RGS = 6.25 Ω; RL = 6.25 Ω.
Fig.14 Input impedance as a function of frequency
(series components), typical values.
Fig.15 Power gain as a function of frequency,
typical values.
September 1992
9
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 15.8 Ω; unless otherwise specified.
RF performance in CW operation in a common source class-B test circuit.
MODE OF
OPERATION
f
VDS
(V)
IDQ
(A)
PL
(W)
GP
(dB)
ηD
(%)
(MHz)
CW, class-B
108
50
0.1
150
typ. 19
typ. 70
MGP101
MGP102
30
100
handbook, halfpage
handbook, halfpage
G
p
(dB)
η
(%)
20
50
10
0
0
0
0
100
200
100
200
P
(W)
L
P
(W)
L
Class-B operation; VDS = 50 V; IDQ = 100 mA;
Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.
RGS = 15.8 Ω; f = 108 MHz.
Fig.16 Power gain as a function of load power,
typical values.
Fig.17 Two tone efficiency as a function of load
power, typical values.
September 1992
10
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP103
200
handbook, halfpage
P
L
(W)
100
0
0
1
2
3
4
P
(W)
IN
Class-B operation; VDS = 50 V; IDQ = 100 mA;
RGS = 15.8 Ω; f = 108 MHz.
Fig.18 Load power as a function of input power,
typical values.
C17
C18
C13
L8
C15
C16
D.U.T.
BLF177
L4
L7
output
50 Ω
C3
C2
C4
C5
C1
L2
L3
L1
input
50 Ω
C14
L5
C9
C10
R1
R2
C11
L6
C12
C6
R6
C7
R3
+V
C8
D
C19
R5
R4
MGP104
f = 108 MHz.
Fig.19 Test circuit for class-B operation.
September 1992
11
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
List of components (class-B test circuit)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1, C2, C16, C18 film dielectric trimmer
2.5 to 20 pF
20 pF
2222 809 07004
C3
multilayer ceramic chip capacitor
(note 1)
C4, C5
multilayer ceramic chip capacitor
(note 1)
62 pF
1 nF
C6, C7, C9, C10
multilayer ceramic chip capacitor
(note 1)
C8
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
100 nF
10 nF
2222 852 47104
2222 852 47103
2222 852 47104
C11
C12
3 × 100 nF
36 pF
C13, C14
multilayer ceramic chip capacitor
(note 1)
C15
C17
multilayer ceramic chip capacitor
(note 1)
12 pF
multilayer ceramic chip capacitor
(note 1)
5.6 pF
C19
L1
electrolytic capacitor
4.4 µF, 63 V
2222 030 28478
3 turns enamelled 0.8 mm copper
wire
22 nH
length 5.5 mm;
int. dia. 3 mm;
leads 2 × 5 mm
L2
stripline (note 2)
stripline (note 2)
64.7 Ω
41.1 Ω
122 nH
31 × 3 mm
10 × 6 mm
L3, L4
L5
6 turns enamelled 1.6 mm copper
wire
length 13.8 mm;
int. dia. 6 mm;
leads 2 × 5 mm
L6
L7
L8
grade 3B Ferroxcube wideband HF
choke
4312 020 36642
1 turn enamelled 1.6 mm copper
wire
16.5 nH
34.4 nH
int. dia. 9 mm;
leads 2 × 5 mm
2 turns enamelled 1.6 mm copper
wire
length 3.9 mm;
int. dia. 6 mm;
leads 2 × 5 mm
R1, R2
R3
1 W metal film resistor
0.4 W metal film resistor
cermet potentiometer
0.4 W metal film resistor
1 W metal film resistor
31.6 Ω
1 kΩ
R4
5 kΩ
R5
44.2 Ω
10 Ω
R6
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),
thickness 1.6 mm.
September 1992
12
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
174
strap
strap
70
rivet
strap
R4
R5
C19
L6
+V
D
R6
R3
C8
C11
C10
C9
C6
C7
C12
C13
L5
R1
R2
L3
C4
C5
C15
C16
C3
C2
L2
L1
L7
L8
C17
C18
L4
C14
C1
MGP105
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the source
leads and at the input and output copper straps are used for a direct contact between upper and lower sheets.
Dimensions in mm.
Fig.20 Component layout for 108 MHz class-B test circuit.
13
September 1992
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
MGP107
MGP108
4
10
handbook, halfpage
handbook, halfpage
Z
Z
i
L
(Ω)
(Ω)
2
0
8
r
i
R
X
L
6
4
2
x
i
L
−2
−4
−6
0
0
0
100
200
100
200
f (MHz)
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
PL = 150 W; RGS = 15 Ω.
PL = 150 W; RGS = 15 Ω.
Fig.22 Load impedance as a function of frequency
(series components), typical values.
Fig.21 Input impedance as a function of frequency
(series components), typical values.
MGP109
30
handbook, halfpage
G
p
(dB)
20
handbook, halfpage
10
Z
Z
L
MBA379
i
0
0
100
200
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
PL = 150 W; RGS = 15 Ω.
Fig.23 Definition of MOS impedance.
Fig.24 Power gain as a function of frequency,
typical values.
September 1992
14
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT121B
D
A
F
q
C
U
1
B
c
H
b
L
w
M
C
2
4
3
α
A
D
U
3
U
p
1
2
w
M
A
B
1
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
F
H
L
p
Q
q
U
U
U
3
w
w
2
α
UNIT
1
1
2
1
5.82
5.56
12.83
12.57
7.27
6.17
12.86
12.59
2.67 28.45 7.93
2.41 25.52 6.32
3.30
3.05
4.45
3.91
24.90 6.48 12.32
24.63 6.22 12.06
0.16
0.10
18.42
0.725
1.02
0.51
0.02 0.04
mm
45°
0.229
0.219
0.505
0.495
0.286
0.243
0.506
0.496
0.105 1.120 0.312 0.130
0.095 1.005 0.249 0.120
0.255 0.485
0.245 0.475
0.006
0.004
0.175
0.154
0.98
0.97
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT121B
97-06-28
September 1992
15
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF177
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
16
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