933978520112 [NXP]
TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power;
| 型号： | 933978520112 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power 局域网 放大器 CD 晶体管 |
| 文件： | 总21页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF278
VHF push-pull power MOS
transistor
1996 Oct 21
Product Specification
Supersedes data of October 1992
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
FEATURES
PINNING - SOT262A1
• High power gain
PIN
SYMBOL
DESCRIPTION
• Easy power control
1
2
3
4
5
d1
d2
g1
g2
s
drain 1
drain 2
gate 1
gate 2
source
• Good thermal stability
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Broadcast transmitters in the VHF frequency range.
DESCRIPTION
1
2
d
Dual push-pull silicon N-channel enhancement mode
vertical D-MOS transistor encapsulated in a 4-lead,
SOT262A1 balanced flange package with two ceramic
caps. The mounting flange provides the common source
connection for the transistors.
g
s
g
d
5
5
3
4
MAM098
Top view
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
f
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
MODE OF OPERATION
CW, class-B
(MHz)
108
108
225
50
50
50
300
300
250
>20
>60
CW, class-C
typ. 18
typ. 80
CW, class-AB
>14
>50
typ. 16
typ. 55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1996 Oct 21
2
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current (DC)
−
−
−
−
110
V
±20
18
V
A
Ptot
total power dissipation
up to Tmb = 25 °C total device;
500
W
both sections equally loaded
Tstg
Tj
storage temperature
junction temperature
−65
150
200
°C
°C
−
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction total device; both sections
to mounting base
max. 0.35
K/W
K/W
equally loaded.
Rth mb-h
thermal resistance from
mounting base to heatsink
total device; both sections
equally loaded.
max. 0.15
MRA988
MGE616
100
500
handbook, halfpage
handbook, halfpage
P
tot
(W)
I
D
(A)
400
(2)
(1)
(2)
(1)
10
300
200
100
1
1
0
0
10
100
500
40
80
120
160
T
(°C)
V
(V)
h
DS
Total device; both sections equally loaded.
Total device; both sections equally loaded.
(1) Continuous operation.
(1) Current is this area may be limited by RDSon
.
(2) Tmb = 25 °C.
(2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1996 Oct 21
3
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor section
V(BR)DSS
IDSS
drain-source breakdown voltage VGS = 0; ID = 50 mA
110
−
−
−
−
−
−
V
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
VGS = 0; VDS = 50 V
VGS = ±20 V; VDS = 0
VDS = 10 V; ID = 50 mA
VDS = 10 V; ID = 50 mA
−
−
2
−
2.5
1
mA
µA
V
IGSS
VGSth
∆VGS
4.5
100
gate-source voltage difference
of both sections
mV
gfs
forward transconductance
VDS = 10 V; ID = 5 A
4.5
0.9
6.2
−
S
gfs1/gfs2
forward transconductance ratio VDS = 10 V; ID = 5 A
of both sections
−
1.1
RDSon
IDSX
Cis
drain-source on-state resistance VGS = 10 V; ID = 5 A
−
−
−
−
−
−
0.2
25
0.3
−
Ω
drain cut-off current
input capacitance
VGS = 10 V; VDS = 10 V
A
VGS = 0; VDS = 50 V; f = 1 MHz
VGS = 0; VDS = 50 V; f = 1 MHz
VGS = 0; VDS = 50 V; f = 1 MHz
480
190
14
−
pF
pF
pF
pF
Cos
output capacitance
feedback capacitance
drain-flange capacitance
−
Crs
−
Cd-f
5.4
−
MGE622
MGE623
30
0
handbook, halfpage
handbook, halfpage
T.C.
(mV/K)
I
D
(A)
−1
20
−2
−3
−4
−5
10
0
0
−2
−1
5
10
15
10
10
1
10
V
(V)
I
(A)
GS
D
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Fig.5 Drain current as a function of gate-source
voltage; typical values per section.
1996 Oct 21
4
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
MGE621
MGE615
400
1200
handbook, halfpage
handbook, halfpage
R
DSon
C
(pF)
(mΩ)
300
800
400
200
100
0
C
is
C
os
0
0
0
50
100
150
20
40
60
V
(V)
T (°C)
DS
j
VGS = 10 V; ID = 5 A.
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per
section.
MGE620
400
handbook, halfpage
C
rs
(pF)
300
200
100
0
0
10
20
30
40
V
50
(V)
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values per
section.
1996 Oct 21
5
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
APPLICATION INFORMATION
Class-B operation
RF performance in CW operation in a common source push-pull test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W unless
otherwise specified. RGS = 4 Ω per section; optimum load impedance per section = 3.2 + j4.3 Ω (VDS = 50 V).
f
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
ηD
(%)
MODE OF OPERATION
CW, class-B
(MHz)
108
50
2 × 0.1
300
>20
>60
typ. 22
typ. 70
CW, class-C
108
50
VGS = 0
300
typ. 18
typ. 80
Ruggedness in class-B operation
The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the
conditions: VDS = 50 V; f = 108 MHz at rated load power.
1996 Oct 21
6
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
MGE682
MGE683
30
80
handbook, halfpage
handbook, halfpage
η
D
G
p
(dB)
(%)
(2)
(1)
(1)
60
20
(2)
(1)
(2)
40
20
10
0
0
0
0
200
400
600
200
400
600
P
(W)
P
(W)
L
L
Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz;
ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section).
Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz;
ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.9 Power gain as a function of load power,
typical values.
Fig.10 Efficiency as a function of load power,
typical values.
MGE684
600
handbook, halfpage
P
L
(W)
(1)
400
(2)
200
0
0
5
10
15
P (W)
i
Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A; f = 108 MHz;
ZL = 3.2 + j4.3 Ω (per section); RGS = 4 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.11 Load power as a function of input power,
typical values.
1996 Oct 21
7
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
GM6E8
nbok,fulpagewidth
1996 Oct 21
8
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
List of components (see Figs 12 and 13).
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS CATALOGUE NO.
C1, C2, C33, C34 multilayer ceramic chip capacitor;
note 1
22 pF, 500 V
C3, C4
multilayer ceramic chip capacitor;
note 1
100 pF + 68 pF
in parallel, 500 V
C5, C6, C28
C7
film dielectric trimmer
5 to 60 pF
2222 809 08003
2222 852 47104
multilayer ceramic chip capacitor;
note 1
2 × 100 pF +
1 × 120 pF in
parallel, 500 V
C8, C11, C12,
C15, C16, C19,
C36
multilayer ceramic chip capacitor
100 nF, 500 V
C9, C10, C13,
C14, C20, C25
multilayer ceramic chip capacitor;
note 1
1 nF, 500 V
470 pF, 500 V
10 µF, 63 V
C17, C18, C22,
C23
multilayer ceramic chip capacitor;
note 1
C21, C24, C35
C26
electrolytic capacitor
multilayer ceramic chip capacitor;
note 1
2 × 15 pF +
1 × 18 pF in
parallel, 500 V
C27
C29
multilayer ceramic chip capacitor;
note 1
3 × 15 pF in
parallel, 500 V
multilayer ceramic chip capacitor;
note 1
2 × 18 pF +
1 × 15 pF in
parallel, 500 V
C30
film dielectric trimmer
2 to 18 pF
2222 809 09006
C31, C32
multilayer ceramic chip capacitor;
note 1
3 × 43 pF in
parallel, 500 V
L1, L2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
43 Ω
43 Ω
43 Ω
43 Ω
43 Ω
length 57.5 mm
width 6 mm
L3, L4
length 29.5 mm
width 6 mm
L5, L6
length 14 mm
width 6 mm
L7, L8
length 6 mm
width 6 mm
L9, L10
L11, L16
L12, L15
length 17.5 mm
width 6 mm
2 × grade 3B Ferroxcube wideband
HF chokes in parallel
4312 020 36642
4 turns enamelled 2 mm copper wire 85 nH
length 13.5 mm
int. dia. 10 mm
leads 2 × 7 mm
L13, L14
stripline; note 2
43 Ω
length 19.5 mm
width 6 mm
1996 Oct 21
9
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
COMPONENT
DESCRIPTION
stripline; note 2
VALUE
DIMENSIONS CATALOGUE NO.
L17, L18
43 Ω
43 Ω
50 Ω
50 Ω
length 24.5 mm
width 6 mm
L19, L20
L21, L23
L22
stripline; note 2
length 66 mm
width 6 mm
stripline; note 2
length 160 mm
width 4.8 mm
semi-rigid cable; note 3
ext. dia. 3.6 mm
outer conductor
length 160 mm
R1
metal film resistor
10 turn potentiometer
metal film resistor
10 Ω, 0.4 W
50 kΩ
R2, R7
R3, R6
3 × 12.1 Ω in
parallel, 0.4 W
R4, R5
R8, R9
R10
metal film resistor
metal film resistor
metal film resistor
10 Ω; 0.4 W
10 Ω ±5%, 1 W
4 × 10 Ω in
parallel, 1 W
R11
IC1
T1
metal film resistor
5.11 kΩ, 1 W
voltage regulator 78L05
1:1 Balun; 7 turns type 4C6 50 Ω
14 × 9 × 5 mm
4322 020 90770
coaxial cable wound around toroid
Notes
1. American Technical Ceramics capacitor, type 100B or capacitor of same quality.
2. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass
PTFE dielectric (εr = 2.2), thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm.
3. L22 is soldered on to stripline L21.
1996 Oct 21
10
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
130
150
strap
strap
strap
strap
strap
100
strap
strap
strap
C20
C21
IC1
C8
C35
L22
V
L11
R8
L11
DD1
T1
C16
C11
C22
R11
C36
C17
50 Ω
output
50 Ω
input
R2 and R7
C9
slider R2
C12
V
DD1
C13
L21
L12
R3
R4
C31
C33
C1 C3
R1
L9
C7
L7
L3
C6
L1
L2
L5
L13
C26
L14
L17
C27
L18
L19
L20
C5
C29
C30
L4
L6 L8
R5
L10
C28
C2 C4
C34
C32
R6
C10
C14
L23
L15
C15
V
DD2
R10
slider R7
L16
R9
L16
C18
C23
C24
C25
C19
MBC438
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth.
Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.13 Printed-circuit board and component layout for 108 MHz class-B test circuit.
1996 Oct 21
11
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
MGE686
MGE685
8
2
handbook, halfpage
handbook, halfpage
Z
L
(Ω)
Z
i
(Ω)
R
r
L
i
6
1
0
X
L
4
2
−1
−2
x
i
0
25
75
125
175
25
75
125
175
f (MHz)
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A;
RGS = 4 Ω (per section); PL = 300 W.
Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A;
RGS = 4 Ω (per section); PL = 300 W.
Fig.14 Input impedance as a function of frequency
(series components), typical values per
section.
Fig.15 Load impedance as a function of frequency
(series components), typical values per
section.
MGE687
30
handbook, halfpage
G
p
(dB)
20
handbook, halfpage
10
Z
Z
L
MBA379
i
0
25
75
125
175
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 2 × 0.1 A;
RGS = 4 Ω (per section); PL = 300 W.
Fig.17 Power gain as a function of frequency,
typical values per section.
Fig.16 Definition of MOS impedance.
1996 Oct 21
12
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
Class-AB operation
RF performance in CW operation in a common source push-pull test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W unless
otherwise specified. RGS = 2.8 Ω per section; optimum load impedance per section = 0.74 + j2 Ω; (VDS = 50 V).
f
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
ηD
(%)
MODE OF OPERATION
(MHz)
CW, class-AB
225
50
2 × 0.5
250
>14
>50
typ. 16
typ. 55
Ruggedness in class-AB operation
The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7 : 1 through all phases under the
conditions: VDS = 50 V; f = 225 MHz at rated output power.
1996 Oct 21
13
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
MGE612
MGE614
60
20
handbook, halfpage
handbook, halfpage
(1)
η
D
(%)
(2)
G
p
(1)
(dB)
(2)
40
10
20
0
0
0
100
200
300
0
100
200
300
P
(W)
P
(W)
L
L
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.18 Power gain as a function of load power,
typical values.
Fig.19 Efficiency as a function of load power,
typical values.
MGE613
400
handbook, halfpage
P
L
(W)
300
(1)
(2)
200
100
0
0
5
10
15
P (W)
i
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A; f = 225 MHz;
ZL = 0.74 + j2 Ω (per section); RGS = 2.8 Ω (per section).
(1) Th = 25 °C.
(2) Th = 70 °C.
Fig.20 Load power as a function of input power,
typical values.
1996 Oct 21
14
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
GM6E17
1996 Oct 21
15
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
List of components (see Figs 21 and 22).
COMPONENT
C1, C2
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
multilayer ceramic chip capacitor; 27 pF, 500 V
note 1
C3, C4, C31, C32 multilayer ceramic chip capacitor; 3 × 18 pF
note 1
in parallel, 500 V
C5
film dielectric trimmer
film dielectric trimmer
4 to 40 pF
2 to 18 pF
2222 809 08002
2222 809 09006
C6, C30
C7
multilayer ceramic chip capacitor; 100 pF, 500 V
note 1
C8, C9, C15, C18 MKT film capacitor
1 µF, 63 V
2222 371 11105
2222 852 47104
C10, C13, C14,
C19, C36
multilayer ceramic chip capacitor
100 nF, 50 V
C11, C12
multilayer ceramic chip capacitor; 2 × 1 nF in parallel,
note 1
500 V
C16, C17
C20
electrolytic capacitor
220 µF, 63 V
multilayer ceramic chip capacitor; 3 × 33 pF in
note 1
parallel, 500 V
C21
film dielectric trimmer
2 to 9 pF
2222 809 09005
C22, C27, C37,
C38
multilayer ceramic chip capacitor; 1 nF, 500 V
note 1
C23, C26, C35
C24, C25
electrolytic capacitor
multilayer ceramic chip capacitor; 2 × 470 pF in
note 1 parallel, 500 V
multilayer ceramic chip capacitor; 2 × 10 pF +
10 µF, 63 V
C28
note 1
1 × 18 pF in
parallel, 500 V
C29
multilayer ceramic chip capacitor; 2 × 5.6 pF in
note 1 parallel, 500 V
C33, C34
L1, L3, L22, L24
L2, L23
multilayer ceramic chip capacitor; 5.6 pF, 500 V
note 1
stripline; note 2
50 Ω
length 80 mm
width 4.8 mm
semi-rigid cable; note 3
50 Ω
ext. dia. 3.6 mm
outer conductor
length 80 mm
L4, L5
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
stripline; note 2
43 Ω
43 Ω
43 Ω
43 Ω
43 Ω
length 24 mm
width 6 mm
L6, L7
length 14.5 mm
width 6 mm
L8, L9
length 4.4 mm
width 6 mm
L10, L11
L12, L13
length 3.2 mm
width 6 mm
length 15 mm
width 6 mm
1996 Oct 21
16
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
COMPONENT
L14, L17
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
2 × grade 3B Ferroxcube
4312 020 36642
wideband HF chokes in parallel
L15, L16
13⁄4 turns enamelled 2 mm copper 40 nH
wire
int. dia. 10 mm
leads 2 × 7 mm
space 1 mm
L18, L19
L20, L21
stripline; note 2
stripline; note 2
43 Ω
43 Ω
length 13 mm
width 6 mm
length 29.5 mm
width 6 mm
R1
metal film resistor
10 turns potentiometer
metal film resistor
metal film resistor
10 Ω, 0.4 W
50 kΩ
R2, R7
R3, R6
R4, R5
1 kΩ, 0.4 W
2 × 5.62 Ω, in
parallel, 0.4 W
R8, R9
R10
metal film resistor
metal film resistor
10 Ω ±5%, 1 W
4 × 42.2 Ω in
parallel, 1 W
R11
IC1
metal film resistor
5.11 kΩ, 1 W
voltage regulator 78L05
Notes
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality.
2. L1, L3 to L13, L18 to L22 and L24 are microstriplines on a double copper-clad printed-circuit board, with fibre-glass
reinforced PTFE dielectric (εr = 2.2), thickness 1⁄16 inch; thickness of copper sheet 2 × 35 µm.
3. L2 and L23 are soldered on to striplines L1 and L24 respectively.
1996 Oct 21
17
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
130
119
strap
strap
strap
strap
Hollow
rivets
Hollow
rivets
100
strap
strap
strap
strap
C24
C22
C23
to R2,R7
IC1
C14
L14
R8
V
DD1
R11
C36
C16
C15
C38
L2
L14
C35
slider R2
L22
C37
C11
V
C8
DD1
L1
L15
R3
C10
R4
L6 L8
C7
R10
C3
C31
C30
L20
C29
C1
C2
C33
C6
L10
L11
L12
C20
L13
L4
C5
L5
L18
C28
C21
L19
50 Ω
input
50 Ω
output
R1
L7 L9
L21
C34
C4
C32
R5
C13
R6
C12
L16
V
DD2
C9
slider R7
L3
L23
L24
L17
C18
R9
L17
C17
C19
C26
C27
C25
MBC436
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth.
Earth connections are made by means of copper straps for a direct contact between upper and lower sheets.
Fig.22 Printed-circuit board and component layout for 225 MHz class-AB test circuit.
1996 Oct 21
18
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
MGE625
MGE611
3
2
handbook, halfpage
handbook, halfpage
z
i
(Ω)
X
L
Z
L
(Ω)
1
r
i
2
0
R
L
1
x
i
−1
0
150
–2
150
200
250
200
250
f (MHz)
f (MHz)
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A;
RGS = 2.8 Ω (per section); PL = 250 W.
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A;
RGS = 2.8 Ω (per section); PL = 250 W.
Fig.23 Input impedance as a function of frequency
(series components), typical values per
section.
Fig.24 Load impedance as a function of frequency
(series components), typical values per
section.
MGE624
20
handbook, halfpage
G
p
(dB)
handbook, halfpage
10
Z
Z
L
MBA379
i
0
150
200
250
f (MHz)
Class-AB operation; VDS = 50 V; IDQ = 2 × 0.5 A;
RGS = 2.8 Ω (per section); PL = 250 W.
Fig.26 Power gain as a function of frequency,
typical values per section.
Fig.25 Definition of MOS impedance.
1996 Oct 21
19
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
PACKAGE OUTLINE
0.25
11 max
11 max
0.13
5.8
max
2.92
2.29
1.65
1.02
seating plane
21.85
0.25 M
5.9
5.5
(4x)
2.54
1
2
10.4
max
3.3
3.0
15.6
max
9.8
5
3
4
5.525
11.05
27.94
MSA285 - 2
34.3 max
Dimensions in mm.
Fig.27 SOT262A1.
1996 Oct 21
20
Philips Semiconductors
Product Specification
VHF push-pull power MOS transistor
BLF278
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Oct 21
21
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明