933986360115 [NXP]
TRANSISTOR 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP General Purpose Small Signal;型号: | 933986360115 |
厂家: | NXP |
描述: | TRANSISTOR 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总8页 (文件大小:49K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
BSP60; BSP61; BSP62
PNP Darlington transistors
Product specification
2001 May 31
Supersedes data of 1999 Apr 29
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
FEATURES
PINNING
PIN
• High current (max. 0.5 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
DESCRIPTION
1
2, 4
3
base
collector
emitter
APPLICATIONS
• Industrial switching applications such as:
– Print hammer
4
2, 4
– Solenoid
1
– Relay and lamp drivers.
DESCRIPTION
1
2
3
PNP Darlington transistor in a SOT223 plastic package.
NPN complements: BSP50, BSP51 and BSP52.
3
Top view
MAM266
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BSP60
−
−
−
−60
V
V
V
BSP61
−80
−90
BSP62
VCES
collector-emitter voltage
BSP60
VBE = 0
−
−
−
−
−
−
−
−
−45
−60
−80
−5
V
V
V
V
A
A
BSP61
BSP62
VEBO
IC
ICM
IB
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
−1
−2
−100
1.25
+150
150
+150
mA
W
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
°C
°C
°C
Tamb
−65
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
2001 May 31
2
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to solder point
note 1
98
17
K/W
K/W
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICES
PARAMETER
collector cut-off current
BSP60
CONDITIONS
MIN.
TYP. MAX. UNIT
VBE = 0; VCE = −45 V
−
−
−
−
−
−50
−50
−50
−50
nA
nA
nA
nA
BSP61
V
BE = 0; VCE = −60 V
BE = 0; VCE = −80 V
−
−
−
BSP62
V
IEBO
hFE
emitter cut-off current
DC current gain
IC = 0; VEB = −4 V
VCE = −10 V; note 1; see Fig.2
IC = −150 mA
1000
2000
−
−
−
−
−
−
IC = −500 mA
−
VCEsat
collector-emitter saturation
voltage
IC = −500 mA; IB = −0.5 mA
−1.3
−1.3
V
V
IC = −500 mA; IB = −0.5 mA;
Tj = 150 °C
−
VBEsat
fT
base-emitter saturation voltage IC = −500 mA; IB = −0.5 mA
−
−
−
−1.9
V
transition frequency
IC = −500 mA; VCE = −5 V;
200
−
MHz
f = 100 MHz
Switching times (between 10% and 90% levels); see Fig.3
ton
toff
turn-on time
turn-off time
ICon = −500 mA; IBon = −0.5 mA;
IBoff = 0.5 mA
−
−
400
−
−
ns
ns
1500
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2001 May 31
3
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
MGD839
6000
h
FE
5000
4000
3000
2000
1000
0
−10
−1
2
3
−1
−10
−10
−10
I
(mA)
C
VCE = −10 V.
Fig.2 DC current gain; typical values.
V
B
V
C
BB
CC
R
R
V
(probe)
(probe)
o
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
i
DUT
R1
MGD624
Vi = −10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = 1.8 V; VCC = −10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.3 Test circuit for switching times.
4
2001 May 31
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
99-09-13
SOT223
SC-73
2001 May 31
5
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 May 31
6
Philips Semiconductors
Product specification
PNP Darlington transistors
BSP60; BSP61; BSP62
NOTES
2001 May 31
7
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72
SCA
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Printed in The Netherlands
613514/05/pp8
Date of release: 2001 May 31
Document order number: 9397 750 07906
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