933994040114
更新时间：2024-09-18 18:23:14
品牌：NXP
描述：TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, METAL CERAMIC PACKAGE-2, BIP RF Power
概述
规格参数
数据手册933994040114 概述
TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, METAL CERAMIC PACKAGE-2, BIP RF Power 射频双极晶体管
933994040114 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Obsolete | 包装说明： | METAL CERAMIC PACKAGE-2 |
| 针数： | 2 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | 风险等级： | 5.13 |
| 其他特性： | DIFFUSED EMITTER BALLASTING RESISTORS | 外壳连接： | BASE |
| 最大集电极电流 (IC)： | 3 A | 集电极-发射极最大电压： | 20 V |
| 配置： | SINGLE | 最高频带： | L BAND |
| JESD-30 代码： | R-CDFM-F2 | 元件数量： | 1 |
| 端子数量： | 2 | 封装主体材料： | CERAMIC, METAL-SEALED COFIRED |
| 封装形状： | RECTANGULAR | 封装形式： | FLANGE MOUNT |
| 峰值回流温度（摄氏度）： | NOT SPECIFIED | 极性/信道类型： | NPN |
| 认证状态： | Not Qualified | 表面贴装： | YES |
| 端子形式： | FLAT | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | AMPLIFIER |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
933994040114 数据手册
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DATA SHEET
MZ0912B50Y
NPN microwave power transistor
1997 Feb 18
Product specification
Supersedes data of November 1994
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
FEATURES
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class C
• Interdigitated structure provides
high emitter efficiency
broadband amplifier.
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
MODE OF
OPERATION
f
VCC
(V)
PL
Gp
ηC
Zi/ZL (Ω)
(GHz)
(W) (dB) (%)
Class C;
tp = 10 µs; δ = 1%
0.960 to 1.215 50
>50 >7
>42
see Figs 6
and 7
• Gold metallization realizes very
stable characteristics and excellent
lifetime
PINNING - SOT443A
PIN
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
DESCRIPTION
1
2
3
collector
emitter
base connected to flange
• Input and output matching cell
allows an easier design of circuits.
APPLICATIONS
Common base, class C, broadband,
pulse power amplifier from
960 to 1215 MHz for TACAN
application.
handbook, halfpage
1
c
b
DESCRIPTION
3
e
NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.
2
Top view
MAM314
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
65
UNIT
VCBO
VCEO
VCES
VEBO
IC
−
−
−
−
−
−
V
V
V
V
A
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
open base
20
RBE = 0 Ω
60
open collector
tp ≤ 10 µs; δ ≤ 10%
3
3
Ptot
total power dissipation (peak power) Tmb = 75 °C; tp ≤ 10 µs; δ ≤ 10%
storage temperature
150
+200
200
235
W
Tstg
Tj
−65
−
°C
°C
°C
operating junction temperature
Tsld
soldering temperature
t ≤ 10 s; note 1
−
Note
1. Up to 0.2 mm from ceramic.
MGL051
180
handbook, halfpage
P
tot
(W)
120
60
0
−
50
0
100
200
T
(°C)
mb
tp = 10 µs; δ = 10%; Ptot max = 150 W.
Fig.2 Power derating curve.
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
THERMAL CHARACTERISTICS
Tj = 125 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
CW
MAX.
UNIT
Rth j-mb
Rth mb-h
Zth j-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
thermal impedance from junction to heatsink
4.9
K/W
K/W
K/W
CW; note 1
0.2
notes 1 and 2
0.85
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions; tp = 10 µs; δ = 10%.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
CONDITIONS
VCB = 65 V; IE = 0
CB = 50 V; IE = 0
MAX.
UNIT
ICBO
20
2
mA
mA
mA
µA
V
ICES
IEBO
collector cut-off current
emitter cut-off current
VCE = 60 V; RBE = 0 Ω
20
200
VEB = 1.5 V; IC = 0
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C measured in the test jig as shown in Fig.3 and working in class C broadband
mode in pulse; note 1.
f
VCC
(V)(2)
PL
(W)
Gp
(dB)
ηC
(%)
Zi/ZL
(Ω)
MODE OF OPERATION
(GHz)
Class C;
tp = 10 µs; δ = 10%
0.960 to 1.215
50
>50
typ. 60
>7
typ. 8
>42
typ. 44
see Figs 6
and 7
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. VCC during pulse.
List of components (see Fig.3).
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1, L2
0.65 mm diameter copper wire −
total length = 12 mm;
height of loop = 9 mm
−
−
L3
4 turns 0.65 mm diameter
copper wire;
−
int. dia. 3 mm; l = 5 mm
C1
capacitor
100 pF
−
−
−
−
−
ATC, ref. 100A101KP50X
C2
tantalum capacitor
10 µF; 50 V
470 µF; 63 V
−
−
C3
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
−
C4
Erie, ref. 1250-003
Tekelec, ref. 727.1
C5, C6
0.6 to 4.5 pF
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
30 mm
30 mm
1
3
3
9
2
2
10
2.5
2
9
4.5
9
3
11
20
40
40
mm
mm
6.5
12
0.635
0.635
5
5
MCD634
+V
C3
CC
C4
C2
L1
L3
C1
L2
C5
MGL064
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.3 Broadband test circuit.
5
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
MGL052
MGL053
70
50
handbook, halfpage
handbook, halfpage
P
L
η
C
(W)
(%)
60
45
50
0.95
40
0.95
1.05
1.15
1.25
1.05
1.15
1.25
f (GHz)
f (GHz)
VCC = 50 V; tp = 10 µs; δ = 10%.
Fig.4 Load power as a function of frequency;
(In broadband test circuit as shown in
Fig.3).
Fig.5 Collector efficiency as a function of
frequency; (In broadband test circuit as
shown in Fig.3).
1
0.5
2
0.960 GHz
0.2
5
1.215 GHz
0.2
10
+ j
− j
0.5
1
2
5
10
0
∞
10
5
0.2
2
0.5
MGL049
1
VCC = 50 V; Zo = 10 Ω; PL = 50 W.
Fig.6 Optimum load impedance as a function of frequency, associated with input impedance.
6
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
1
0.5
2
0.2
5
0.960 GHz
1
10
1.215 GHz
+ j
0.2
0.5
2
5
10
0
∞
− j
10
5
0.2
2
0.5
MGL050
1
VCC = 50 V; Zo = 10 Ω; PL = 50 W.
Fig.7 Input impedance as a function of frequency, associated with optimum load impedance.
1997 Feb 18
7
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
PACKAGE OUTLINE
24 max
0.5 Y
0.1
6.4
max
3.5
2.9
3
1.7 max
seating plane
Y
3.1
1
4 min
0.5 X
X
10.5
max
23
max
10.5
max
3.4
3.2
0.5 X
2
MBC663
16.5
0.5 Y
Dimensions in mm.
Torque on screw: Max. 0.5 Nm.
Recommended screw: M3.
Fig.8 SOT443A.
1997 Feb 18
8
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of this specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
9
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
NOTES
1997 Feb 18
10
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
NOTES
1997 Feb 18
11
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© Philips Electronics N.V. 1997
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number: 9397 750 01736
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| 933994050114 | NXP | L BAND, Si, NPN, RF POWER TRANSISTOR, METAL CERAMIC, SOT-443A, 3 PIN | 获取价格 |
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