934008580215 [NXP]
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal;
| 型号： | 934008580215 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFT25A
NPN 5 GHz wideband transistor
December 1997
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFT25A
FEATURES
PINNING
PIN
• Low current consumption
(100 µA − 1 mA)
DESCRIPTION
Code: V10
base
• Low noise figure
1
2
3
• Gold metallization ensures
excellent reliability.
emitter
page
3
collector
DESCRIPTION
The BFT25A is a silicon npn
transistor, primarily intended for use
in RF low power amplifiers, such as
pocket telephones and paging
systems with signal frequencies up to
2 GHz.
1
2
Top view
MSB003
Fig.1 SOT23.
The transistor is encapsulated in a
3-pin plastic SOT23 envelope.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
open base
−
−
−
−
−
−
−
−
8
V
5
V
6.5
32
mA
mW
Ptot
total power dissipation
up to Ts = 165 °C;
note 1
hFE
fT
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
5
200
transition frequency
IC = 1 mA; VCE = 1 V;
Tamb = 25 °C; f = 500 MHz
3.5
−
GHz
dB
GUM
F
maximum unilateral power
gain
IC = 0.5 mA; VCE = 1 V;
−
−
−
15
1.8
2
−
−
−
Tamb = 25 °C; f = 1 GHz
noise figure
Γ = Γopt; IC = 0.5 mA; VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
dB
Γ = Γopt; IC = 1 mA; VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
December 1997
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFT25A
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
−
−
−
−
−
8
5
2
V
V
V
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
open base
open collector
6.5
32
mA
Ptot
up to Ts = 165 °C;
mW
note 1
Tstg
Tj
storage temperature
junction temperature
−65
150
175
°C
°C
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
from junction to soldering point (note 1)
THERMAL RESISTANCE
260 K/W
Rth j-s
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 5 V
MIN. TYP. MAX. UNIT
−
−
50
200
−
nA
hFE
IC = 0.5 mA; VCE = 1 V
50
3.5
80
5
fT
transition frequency
IC = 1 mA; VCE = 1 V;
GHz
Tamb = 25 °C; f = 500 MHz
Cre
feedback capacitance
IC = ic = 0; VCB = 1 V; f = 1 MHz
IC = 0.5 mA; VCE = 1 V;
−
−
0.3
15
0.45 pF
GUM
maximum unilateral power
gain (note 1)
−
−
−
dB
dB
dB
Tamb = 25 °C; f = 1 GHz
F
noise figure
Γ = Γopt; IC = 0.5 mA; VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
−
−
1.8
2
Γ = Γopt; IC = 1 mA; VCE = 1 V;
Tamb = 25 °C; f = 1 GHz
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
December 1997
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFT25A
MBG247
MCD138
40
100
handbook, halfpage
handbook, halfpage
P
h
tot
FE
(mW)
80
60
40
20
0
30
20
10
0
3
2
1
0
50
100
150
200
10
10
10
1
10
o
( C)
I
(mA)
T
C
s
VCE = 1 V.
Fig.2 Power derating curve.
Fig.3 DC current gain as a function of collector
current.
MCD103
MCD140
0.4
6
handbook, halfpage
handbook, halfpage
C
re
(pF)
f
T
(GHz)
0.3
4
0.2
0.1
0
2
0
1
2
3
4
5
(V)
0
1
2
3
4
0
I
(mA)
V
C
CB
Ic = ic = 0; f = 1 MHz.
VCE = 1 V; Tamb = 25 °C; f = 500 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
Fig.5 Transition frequency as a function of
collector current.
December 1997
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFT25A
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MCD105
20
handbook, halfpage
MCD104
gain
(dB)
25
handbook, halfpage
G
UM
gain
(dB)
G
UM
15
10
5
20
15
10
5
MSG
MSG
0
0
0.5
1.0
1.5
2.0
I
(mA)
C
0
0
0.5
1.0
1.5
2.0
I
(mA)
C
VCE = 1 V; f = 1 GHz.
VCE = 1 V; f = 500 MHz.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MCD106
MCD107
50
50
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
G
40
30
20
10
0
40
30
20
10
0
UM
G
UM
MSG
MSG
G
max
10
G
max
2
3
4
2
3
4
10
10
10
10
10
10
10
f (MHz)
f (MHz)
VCE = 1 V; Ic = 1 mA.
VCE = 1 V; Ic = 0.5 mA.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
December 1997
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFT25A
MCD145
MCD146
4
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
I
= 2 mA
f = 2 GHz
C
3
3
2
1
0
1 GHz
500 MHz
1 mA
2
1
0.5 mA
0
10
−1
1
10
2
4
3
10
10
10
I
(mA)
C
f (MHz)
VCE = 1 V.
VCE = 1 V.
Fig.10 Minimum noise figure as a function of
collector current.
Fig.11 Minimum noise figure as a function of
frequency.
1
f
VCE
(V)
IC
(mA)
0.5
(MHz)
2
500
1
1
pot. unst.
6 dB
4 dB
region
Noise Parameters
0.2
5
stability
circle
Gamma (opt)
(mag) (ang)
0.79
Fmin
(dB)
2.5 dB
5
10
Rn/50
+ j
− j
0.2
0.5
1
2
10
0
∞
1.9
4
2.5
Γ
OPT
= 1.9 dB
F
MSG
min
10
14.5 dB
5
13 dB
11 dB
0.2
2
0.5
MCD108
1
Zo = 50 Ω.
Average gain parameter: MSG = 14.5 dB.
Fig.12 Noise circle figure.
December 1997
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFT25A
1
f
VCE
(V)
IC
(mA)
0.5
2
(MHz)
1000
1
1
pot. unst.
region
stability
circle
8 dB
Noise Parameters
0.2
4 dB
3 dB
5
Gamma (opt)
(mag) (ang)
0.74
Fmin
(dB)
10
Rn/50
+ j
− j
0.2
0.5
1
2
5
10
0
∞
2
8
2.6
Γ
MSG
11.2 dB
OPT
F
= 2 dB
min
10
10 dB
5
0.2
8 dB
2
0.5
MCD109
1
Zo = 50 Ω.
Average gain parameter: MSG = 11.2 dB.
Fig.13 Noise circle figure.
pot. unst.
region
stability
circle
1
f
VCE
(V)
IC
(mA)
(MHz)
0.5
2
2000
1
1
MSG
7.7 dB
Noise Parameters
0.2
Γ
5
OPT
Gamma (opt)
(mag) (ang)
Fmin
(dB)
7 dB
F
= 2.4 dB
Rn/50
min
10
+ j
− j
3 dB
4 dB
0.2
0.5
1
2
5
10
2.4
0.72
26
1.7
0
∞
10
5 dB
5
6 dB
0.2
2
0.5
MCD110
1
Zo = 50 Ω.
Average gain parameter: MSG = 7.7 dB.
Fig.14 Noise circle figure.
December 1997
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFT25A
1
0.5
2
0.2
5
10
+ j
0.2
0.5
1
2
5
10
0
∞
40 MHz
− j
3 GHz
10
5
0.2
2
0.5
MCD111
1
VCE = 1 V; IC = 1 mA.
Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (S11).
90°
135°
45°
3 GHz
40 MHz
4
180°
0°
5
3
2
1
−135°
−45°
MCD112
−90°
VCE = 1 V; IC = 1 mA.
Fig.16 Common emitter forward transmission coefficient (S21).
December 1997
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFT25A
90°
135°
45°
3 GHz
40 MHz
180°
0°
0.5
0.4
0.3
0.2
0.1
−135°
−45°
MCD114
−90°
VCE = 1 V; IC = 1 mA.
Fig.17 Common emitter reverse transmission coefficient (S12).
1
0.5
2
0.2
5
10
+ j
− j
0.2
0.5
1
2
5
10
0
∞
40 MHz
10
3 GHz
5
0.2
2
0.5
MCD113
1
VCE = 1 V; IC = 1 mA.
Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (S22).
December 1997
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFT25A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
December 1997
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFT25A
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
December 1997
11
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