934049750127 [NXP]
TRANSISTOR 12 A, NPN, Si, POWER TRANSISTOR, PLASTIC, TOP-3D, FULL PACK-3, BIP General Purpose Power;
| 型号： | 934049750127 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 12 A, NPN, Si, POWER TRANSISTOR, PLASTIC, TOP-3D, FULL PACK-3, BIP General Purpose Power 局域网 开关 晶体管 |
| 文件： | 总7页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
VCESM
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1700
12
V
A
Collector current (DC)
-
-
ICM
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
30
A
Ptot
VCEsat
ICsat
ts
Ths ≤ 25 ˚C
-
-
45
W
V
IC = 7.0 A; IB = 1.75 A
f = 16 kHz
1.0
-
7.0
5.8
A
ICsat = 7.0 A; f = 16kHz
6.5
µs
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
case
c
base
2
collector
emitter
b
3
Rbe
case isolated
1
2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCESM
IC
Collector-emitter voltage peak value
VBE = 0 V
-
1700
12
V
A
Collector current (DC)
Collector current peak value
Base current (DC)
-
ICM
-
30
A
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
-
12
20
A
A
mA
A
W
˚C
˚C
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
-
average over any 20 ms period
-
200
9
-
-
Ths ≤ 25 ˚C
45
-65
-
150
150
Junction temperature
ESD LIMITING VALUES
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
VC
Electrostatic discharge capacitor voltage Human body model (250 pF,
-
10
kV
1.5 kΩ)
1 Turn-off current.
August 2002
1
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Rth j-hs
Rth j-hs
Rth j-a
Junction to heatsink
Junction to heatsink
Junction to ambient
without heatsink compound
with heatsink compound
in free air
-
-
3.7
2.8
-
K/W
K/W
K/W
35
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
-
-
2500
V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICES
ICES
Collector cut-off current 2
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax
Tj = 125 ˚C
-
-
-
-
1.0
2.0
mA
mA
;
IEBO
BVEBO
REB
VCEsat
VBEsat
VF
hFE
hFE
Emitter cut-off current
VEB = 7.5 V; IC = 0 A
IB = 1 mA
-
110
13.5
70
-
-
mA
V
Emitter-base breakdown voltage
Base-emitter resistance
7.5
VEB = 7.5 V
Ω
V
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.75 A
-
-
1.0
0.95
2.2
-
Base-emitter saturation voltage
Diode forward voltage
DC current gain
IC = 7.0 A; IB = 1.75 A
IF = 7 A
IC = 1 A; VCE = 5 V
IC = 7 A; VCE = 1 V
0.78
0.86
1.4
19
V
V
-
3.8
5.8
7.8
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
TYP. MAX. UNIT
Switching times (16 kHz line
deflection circuit)
ICsat = 7.0 A; LC = 650 µH; Cfb = 18 nF;
VCC = 162 V; IB(end) = 1.5 A; LB = 2 µH;
-VBB = 4 V
ts
tf
Turn-off storage time
Turn-off fall time
5.8
0.6
6.5
0.8
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
August 2002
2
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
ICsat
+ 150 v nominal
adjust for ICsat
TRANSISTOR
IC
IB
DIODE
t
t
Lc
IBend
D.U.T.
20us
26us
64us
LB
IBend
-VBB
Cfb
VCE
Rbe
t
Fig.1. Switching times waveforms (16 kHz).
Fig.3. Switching times test circuit.
ICsat
90 %
hFE
100
10
1
VCE = 5 V
Ths = 25 C
Ths = 85 C
IC
10 %
tf
t
ts
IB
IBend
t
0.01
0.1
1
10
100
- IBM
IC / A
Fig.2. Switching times definitions.
Fig.4. DC current gain. hFE = f (IC)
Parameter Ths
(Low and high gain)
August 2002
3
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
h
V
(V)
BEsat
FE
100
1
0.9
0.8
V
= 1 V
I
= 6 A
CE
C
T
T
= 25 °C
= 85 °C
hs
hs
10
4 A
T
T
= 85 °C
= 25 °C
hs
hs
0.7
0.6
1
0.01
0.1
1
10
100
0
1
2
3
4
I
(A)
I (A)
B
C
4
Fig.5. DC current gain. hFE = f (IC)
Parameter Ths
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
(Low and high gain)
V
(V)
ts/tf/ us
CEsat
10
1
10
9
8
7
6
5
4
3
2
1
0
T
T
= 85 °C
= 25 °C
hs
hs
I
/I = 12
C B
I
/I = 5
C B
0.1
0.01
0.1
1
10
100
0
1
2
3
4
I
(A)
IB / A
C
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
Fig.8. Limit storage and fall time.
ts = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz
August 2002
4
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
Normalised Power Derating
VCC
PD%
120
with heatsink compound
110
100
90
80
70
60
50
40
30
20
10
0
LC
VCL
IB1
LB
CFB
T.U.T.
-VBB
0
20
40
60
80
Ths /
100
120
140
C
Fig.11. Test Circuit RBSOA.
VCC = 150 V; -VBB = 1 - 4 V;
LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH;
CFB = 1 - 3 nF; IB(end) = 0.8 - 4 A
Fig.9. Normalised power dissipation.
PD% = 100 PD/PD 25˚C = f (Ths)
Zth / (K/W)
0.5
IC / A
10
1
35
30
25
20
15
10
5
0.2
0.1
0.05
Area where
fails occur
0.1
0.02
t
T
p
t
p
P
D =
D
0.01
0.001
t
D = 0
T
0
1E-06
1E-04
1E-02
t / s
1E+00
100
1000
1700
VCE / V
Fig.10. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
Fig.12. Reverse bias safe operating area. Tj ≤ Tjmax
August 2002
5
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
MECHANICAL DATA
Dimensions in mm
5.8 max
3.0
16.0 max
Net Mass: 5.88 g
0.7
4.5
3.3
10.0
27
max
25
25.1
25.7
22.5
max
5.1
2.2 max
4.5
18.1
min
1.1
0.4 M
2
3.3
0.95 max
5.45 5.45
Fig.13. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 2002
6
Rev 2.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS3
PRODUCT
STATUS4
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
3 Please consult the most recently issued datasheet before initiating or completing a design.
4 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is
available on the Internet at URL http://www.semiconductors.philips.com.
August 2002
7
Rev 2.000
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