934050520135 [NXP]
3.5A, 55V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 4 PIN;
| 型号： | 934050520135 |
| 厂家： | 
NXP |
| 描述： | 3.5A, 55V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 4 PIN 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7880-55
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mounting. Using ’trench’ technolgy
the device features very low on-state
resistance and has integral zener
diodes giving ESD protection. It is
intended for use in automotive and
SYMBOL
PARAMETER
MAX.
UNIT
VDS
ID
Ptot
Tj
Drain-source voltage
Drain current
Total power dissipation
Junction temperature
Drain-source on-state
55
7.5
1.8
150
80
V
A
W
˚C
mΩ
RDS(ON)
resistance
VGS = 10 V
general
purpose
switching
applications.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
d
4
gate
2
drain
g
3
source
drain (tab)
4
s
2
3
1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
±VGS
ID
Drain-source voltage
-
-
-
-
-
-
55
55
16
7.5
3.5
V
V
V
A
A
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
RGS = 20 kΩ
-
Tsp = 25 ˚C
On PCB in Fig.2
Tamb = 25 ˚C
On PCB in Fig.2
Tamb = 100 ˚C
Tsp = 25 ˚C
Tsp = 25 ˚C
On PCB in Fig.2
Tamb = 25 ˚C
-
ID
ID
Drain current (DC)
-
2.2
A
IDM
Ptot
Ptot
Drain current (pulse peak value)
Total power dissipation
Total power dissipation
-
-
-
40
8.3
1.8
A
W
W
Tstg, Tj
Storage & operating temperature
- 55
150
˚C
ESD LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VC
Electrostatic discharge capacitor
voltage
Human body model
(100 pF, 1.5 kΩ)
-
2
kV
April 1998
1
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7880-55
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Rth j-sp
Rth j-amb
From junction to solder point
From junction to ambient
Mounted on any PCB
Mounted on PCB of Fig.18
12
-
15
70
K/W
K/W
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
VGS = 0 V; ID = 0.25 mA
55
50
2
1.2
-
-
-
-
-
-
-
3
-
-
-
4
V
V
V
V
Tj = -55˚C
VGS(TO)
VDS = VGS; ID = 1 mA
Tj = 150˚C
Tj = -55˚C
-
-
4.4
10
100
1
10
-
IDSS
Zero gate voltage drain current VDS = 55 V; VGS = 0 V;
0.05
-
0.04
-
-
µA
µA
µA
µA
V
Tj = 150˚C
Tj = 150˚C
IGSS
Gate source leakage current
VGS = ±10 V
±V(BR)GSS
RDS(ON)
Gate-source breakdown
voltage
Drain-source on-state
resistance
IG = ±1 mA;
16
VGS = 10 V; ID = 5 A
-
-
65
-
80
148
mΩ
mΩ
Tj = 150˚C
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
gfs
Forward transconductance
VDS = 25 V; ID = 5 A; Tj = 25˚C
VGS = 0 V; VDS = 25 V; f = 1 MHz
1
4
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
365
110
60
500
135
85
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 7 A;
VGS = 10 V; RG = 10 Ω;
-
-
-
-
9
14
25
27
18
ns
ns
ns
ns
15
18
12
Tj = 25˚C
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = -55 to 175˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IDR
Continuous reverse drain
current
Tsp = 25˚C
-
-
7.5
A
IDRM
VSD
Pulsed reverse drain current
Diode forward voltage
Tsp = 25˚C
IF = 5 A; VGS = 0 V
-
-
-
40
1.1
A
V
0.85
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 5 A; -dIF/dt = 100 A/µs;
VGS = -10 V; VR = 30 V
-
-
38
0.2
-
-
ns
µC
April 1998
2
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7880-55
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 2.5 A; VDD ≤ 25 V;
-
-
30
mJ
VGS = 10 V; RGS = 50 Ω; Tsp = 25 ˚C
Normalised Power Derating
100
ID/A
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
RDS(ON) = VDS/ID
10
tp =
1 us
10us
100 us
1 ms
DC
1
10ms
100ms
0
20
40
60
80
Tmb /
100
120
140
0.1
1
10
100
C
VDS/V
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Tsp)
Fig.3. Safe operating area. Tsp = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth/ (K/W)
100
Normalised Current Derating
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
10
0.5
0.2
0.1
1
0.05
p
t
t
p
0.02
P
D
D =
T
0.1
t
T
0
20
40
60
80
Tmb /
100
120
140
0.01
1.0E-06
0.0001
0.01
1
100
C
t/s
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Tsp); conditions: VGS ≥ 10 V
Fig.4. Transient thermal impedance.
Zth j-sp = f(t); parameter D = tp/T
April 1998
3
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7880-55
40
ID/A
30
9
16
gfs/S
9.5
9.0
8.5
8.0
12
10
8
7
6
5
4
3
2
7.5
7.0
6.5
6.0
20
10
0
5.5
5.0
4.5
4.0
0
2
4
6
8
10
0
5
10
15
20
VDS/V
ID/A
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
RDS(ON)/mOhm
130
Rds(on) normalised to 25degC
a
2.5
2
120
110
100
90
80
6
6.5
7
8
9
1.5
1
10
70
60
0.5
-100
-50
0
50
100
150
200
0
5
10
15
20
25
30
ID/A
Tmb / degC
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 10 V
20
ID/A
15
VGS(TO) / V
5
max.
4
typ.
3
10
5
min.
2
1
0
25
150
Tj/C =
0
-100
-50
0
50
100
150
200
0
1
2
3
4
5
6
7
8
9
VGS/V
Tj / C
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
April 1998
4
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7880-55
40
IF/A
Sub-Threshold Conduction
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
30
20
10
0
25
150
Tj/V =
2%
typ
98%
0
0.5
1
1.5
2
0
1
2
3
4
5
VSDS/V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
1
.9
.8
.7
.6
.5
.4
.3
.2
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
Ciss
ThouandspF
.1
0
Coss
Crss
20
40
60
80
100
120
140
0.01
0.1
1
10
100
VDS/V
Tmb /
C
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tsp); conditions: ID = 2.5 A
12
VDD
VDS/V
10
+
L
VDS = 14V
8
6
4
2
0
VDS
VDS = 44V
-
VGS
0
-ID/100
T.U.T.
R 01
RGS
shunt
0
5
10
15
QG/nC
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 LID2 BVDSS/(BVDSS − VDD
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 7 A; parameter VDS
)
April 1998
5
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7880-55
VDD
+
-
RD
VDS
VGS
0
RG
T.U.T.
Fig.17. Switching test circuit.
April 1998
6
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7880-55
PRINTED CIRCUIT BOARD
Dimensions in mm.
36
18
60
4.5
4.6
9
10
7
15
50
Fig.18. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
April 1998
7
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7880-55
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.11 g
6.7
6.3
B
3.1
2.9
0.32
0.24
0.2
M
A
A
4
0.10
0.02
7.3
6.7
3.7
3.3
16
max
13
2
3
1
10
max
1.05
0.85
0.80
0.60
2.3
1.8
max
M
0.1
(4x)
B
4.6
Fig.19. SOT223 surface mounting package.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to surface mounting instructions for SOT223 envelope.
3. Epoxy meets UL94 V0 at 1/8".
April 1998
8
Rev 1.100
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK7880-55
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1998
9
Rev 1.100
1 of 2
Go to Philips Semiconductors' home
Catalog & Datasheets
Select & Go...
In
Catalog by Function
Discrete semiconductors
Audio
BUK7880-55; TrenchMOSÔ transistor Standard level FET
Clocks and Watches
Data communications
Microcontrollers
Peripherals
• Description
• Datasheet
• Products, packages, availability and ordering
• Find similar products
To be ke
Standard analog
Video
•
Wired communications
Wireless communications
Description
Catalog by System
Automotive
N-channel enhancement mode logic level field-effect power transistor in a plastic en
surface mounting. Using ’trench’ technolgy the device features very low on-state res
integral zener diodes giving ESD protection. It is intended for use in automotive and
switching applications.
Consumer Multimedia Systems
Communications
PC/PC-peripherals
Cross reference
Models
Packages
Datasheet
Application notes
Selection guides
Other technical documentation
End of Life information
Datahandbook system
File
Page size
release date Datasheet status count (kB
Publication
Type nr. Title
BUK7880-
55
01-Apr-98
Product
Specification
9
66
TrenchMOSÔ transistor
Standard level FET
Relevant Links
About catalog tree
About search
About this site
Subscribe to eNews
Catalog & Datasheets
Search
Products, packages, availability and ordering
North
Order code
(12nc)
Partnumber American
Partnumber
marking/packing package device status
Standard
BUK7880-55
BUK7880-55
BUK7880- BUK7880-
Marking * Reel
9340 505 20135
SOT223 Full producti
Pack, SMD,
55
55 /T3
Large
Find similar products:
BUK7880-55 links to the similar products page containing an overview of prod
in function or related to the part number(s) as listed on this page. The similar produc
products from the same catalog tree(s) , relevant selection guides and products from
functional category.
2 of 2
Copyright © 2000
Royal Philips Electronics
All rights reserved.
Terms and conditions.
相关型号：
934050960135
150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PLASTIC, SC-75, 3 PIN
NXP
934051370115
DIODE 1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, SC-73, 4 PIN, Signal Diode
NXP
934051380115
DIODE 1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, SC-73, 4 PIN, Signal Diode
NXP
934051390115
DIODE 1 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, SC-73, 4 PIN, Signal Diode
NXP
©2020 ICPDF网 联系我们和版权申明