934055145115 [NXP]
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal;
| 型号： | 934055145115 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal |
| 文件： | 总12页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BC847F series
NPN general purpose transistors
Product specification
2000 Dec 04
Supersedes data of 2000 Oct 23
Philips Semiconductors
Product specification
NPN general purpose transistors
BC847F series
FEATURES
PINNING
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
PIN
DESCRIPTION
1
2
3
base
emitter
APPLICATIONS
collector
• General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
3
handbook, halfpage
3
2
NPN general purpose transistor in an SC-89 (SOT490)
plastic package.
PNP complement: BC857F series.
1
1
2
MARKING
Top view
MAM410
TYPE NUMBER
BC847AF
MARKING CODE
1E
1F
1G
Fig.1 Simplified outline (SC-89; SOT490) and
symbol.
BC847BF
BC847CF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
50
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
45
open collector
5
100
200
100
250
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2000 Dec 04
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BC847F series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air; note 1
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 30 V; IE = 0
CB = 30 V; IE = 0; Tj = 150 °C
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
−
−
−
15
nA
V
5
µA
IEBO
hFE
emitter-base cut-off current
DC current gain
BC847AF
VEB = 5 V; IC = 0
100
nA
IC = 2 mA; VCE = 5 V
110
200
420
580
−
220
450
800
700
770
200
400
1.5
BC847BF
BC847CF
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
mV
mV
mV
mV
pF
IC = 10 mA; VCE = 5 V
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA; note 1
−
−
Cc
fT
collector capacitance
transition frequency
noise figure
VCB = 10 V; IE = Ie = 0;
f = 1 MHz
−
VCE = 5 V; IC = 10 mA;
f = 100 MHz
100
−
MHz
dB
F
IC = 200 µA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
−
10
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2000 Dec 04
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC847F series
GRAPHICAL INFORMATION BC847AF
MGT723
MGT724
400
1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
1000
(1)
300
(1)
(2)
800
600
400
200
0
(2)
200
(3)
(3)
100
0
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
Fig.2 DC current gain; typical values.
MGT725
MGT726
3
10
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
1000
(mV)
(1)
800
(2)
2
600
10
(1)
(2)
(3)
400
200
0
(3)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
IC/IB = 20.
IC/IB 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Dec 04
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC847F series
GRAPHICAL INFORMATION BC847BF
MGT727
MGT728
600
1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
(1)
500
1000
(1)
(2)
400
800
600
400
200
0
(2)
300
(3)
200
(3)
100
0
10
−2
−1
2
3
−1
2
3
10
10
1
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
Fig.6 DC current gain; typical values.
MGT729
MGT730
4
10
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
1000
(mV)
(1)
3
10
800
(2)
600
(3)
2
400
200
0
10
(1)
(3) (2)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
IC/IB = 20.
IC/IB 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Dec 04
5
Philips Semiconductors
Product specification
NPN general purpose transistors
BC847F series
GRAPHICAL INFORMATION BC847CF
MGT731
MGT732
1200
1200
handbook, halfpage
handbook, halfpage
V
BE
(mV)
h
FE
1000
(1)
1000
(1)
(2)
800
800
600
400
200
0
(2)
600
(3)
400
(3)
200
0
−2
−1
2
3
−1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
Fig.10 DC current gain; typical values.
MGT733
MGT734
4
10
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
1000
(mV)
(1)
3
10
800
(2)
600
(3)
2
400
10
(1)
200
0
(3) (2)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
IC/IB = 20.
IC/IB 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Dec 04
6
Philips Semiconductors
Product specification
NPN general purpose transistors
BC847F series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT490
D
B
E
A
X
H
v
M
A
E
3
A
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
v
w
A
p
p
1
E
0.8
0.6
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
1.7
1.5
0.5
0.3
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-10-23
SOT490
SC-89
2000 Dec 04
7
Philips Semiconductors
Product specification
NPN general purpose transistors
BC847F series
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Dec 04
8
Philips Semiconductors
Product specification
NPN general purpose transistors
BC847F series
NOTES
2000 Dec 04
9
Philips Semiconductors
Product specification
NPN general purpose transistors
BC847F series
NOTES
2000 Dec 04
10
Philips Semiconductors
Product specification
NPN general purpose transistors
BC847F series
NOTES
2000 Dec 04
11
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70
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Printed in The Netherlands
613514/04/pp12
Date of release: 2000 Dec 04
Document order number: 9397 750 07659
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