934055156116 [NXP]
600V, 1A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92, PLASTIC, SPT, SC-43, 3 PIN;
| 型号： | 934055156116 |
| 厂家： | 
NXP |
| 描述： | 600V, 1A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92, PLASTIC, SPT, SC-43, 3 PIN 三端双向交流开关 |
| 文件： | 总6页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Triacs
logic level
BT131 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated, sensitive gate triacs in a
plastic envelope, intended for use in
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
general
purpose
bidirectional
BT131-
500
600
800
switching and phase control
applications. These devices are
intended to be interfaced directly to
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
VDRM
Repetitive peak off-state
voltages
500
1
600
1
800
1
V
A
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
16
16
16
A
PINNING - TO92
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 2
T2
T1
2
gate
3
main terminal 1
G
3
2 1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-500
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
5001
6001
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; Tlead ≤51 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
1
A
t = 20 ms
-
-
-
16
17.6
1.28
A
A
t = 16.7 ms
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
t = 10 ms
A2s
ITM = 1.5 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
T2+ G-
-
T2- G-
-
T2- G+
-
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
VGM
PGM
PG(AV)
Tstg
Tj
-
V
-
-
W
over any 20 ms period
W
-40
-
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
December 2000
1
Rev 2.000
Philips Semiconductors
Product specification
Triacs
logic level
BT131 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-lead
Thermal resistance
junction to lead
Thermal resistance
junction to ambient
full cycle
-
-
-
-
-
60
80
-
K/W
K/W
K/W
half cycle
Rth j-a
pcb mounted;lead length = 4mm
150
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
-
-
-
-
0.4
1.3
1.4
3.8
3
3
3
7
mA
mA
mA
mA
T2+ G-
T2- G-
T2- G+
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
-
1.2
4.0
1.0
2.5
1.3
1.2
0.7
0.3
0.1
5
8
mA
mA
mA
mA
mA
V
V
V
mA
-
-
5
-
8
IH
VT
VGT
Holding current
On-state voltage
Gate trigger voltage
VD = 12 V; IGT = 0.1 A
IT = 2.0 A
-
5
-
-
1.5
1.5
-
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C
0.2
-
ID
Off-state leakage current VD = VDRM(max); Tj = 125 ˚C
0.5
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dVD/dt
tgt
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
VDM = 67% VDRM(max); Tj = 125 ˚C;
exponential waveform; RGK = 1 kΩ
ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/µs
5
-
15
2
-
-
V/µs
µs
December 2000
2
Rev 2.000
Philips Semiconductors
Product specification
Triacs
logic level
BT131 series
Ptot / W
1.4
IT(RMS) / A
Tsp(max) / C
= 180
104
107
110
1.2
1
108 C
1.2
1
1
120
90
0.8
0.6
0.4
0.2
0
113
116
0.8
0.6
0.4
0.2
0
60
30
119
122
125
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
Tsp / C
100
150
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus lead temperature Tlead
,
.
IT(RMS) / A
ITSM / A
3
2.5
2.0
1.5
1
1000
100
10
I
TSM
time
I
T
T
Tj initial = 25 C max
dIT/dt limit
T2- G+ quadrant
100us
0.5
0
10us
1ms
T / s
10ms
100ms
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tlead ≤ 51˚C.
ITSM / A
12
VGT(Tj)
VGT(25 C)
1.6
I
TSM
time
I
T
10
8
1.4
1.2
1
T
Tj initial = 25 C max
6
4
0.8
0.6
0.4
2
0
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
December 2000
3
Rev 2.000
Philips Semiconductors
Product specification
Triacs
logic level
BT131 series
IT / A
IGT(Tj)
IGT(25 C)
2
1.5
1
3
Tj = 125 C
Tj = 25 C
T2+ G+
T2+ G-
T2- G-
T2- G+
2.5
2
Vo = 1.0 V
Rs = 0.21 Ohms
typ
1.5
1
max
0.5
0
0.5
0
0
0.5
1
1.5
2
-50
0
50
Tj / C
100
150
VT / V
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Zth j-sp (K/W)
100
IL(Tj)
IL(25 C)
3
2.5
2
10
unidirectional
bidirectional
1
1.5
1
t
P
D
p
0.1
t
0.5
0
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
Fig.11. Transient thermal impedance Zth j-lead, versus
pulse width tp.
versus junction temperature Tj.
dVD/dt (V/us)
1000
IH(Tj)
IH(25C)
3
2.5
2
100
10
1
1.5
1
0.5
0
-50
0
50
100
150
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
versus junction temperature Tj.
December 2000
4
Rev 2.000
Philips Semiconductors
Product specification
Triacs
logic level
BT131 series
MECHANICAL DATA
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e
1
2
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
A
b
b
c
D
d
E
e
e
L
1
1
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-02-28
SOT54
TO-92
SC-43
Fig.13. TO92 ; plastic envelope; Net Mass: 0.2 g
Notes
1. Epoxy meets UL94 V0 at 1/8".
December 2000
5
Rev 2.000
Philips Semiconductors
Product specification
Triacs
logic level
BT131 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
December 2000
6
Rev 2.000
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