934056005127 [NXP]

TRIAC, 600V V(DRM), 16A I(T)RMS, TO-220AB, PLASTIC, SC-46, 3 PIN;


型号：	934056005127
厂家：	NXP
描述：	TRIAC, 600V V(DRM), 16A I(T)RMS, TO-220AB, PLASTIC, SC-46, 3 PIN 局域网三端双向交流开关
文件：	总6页 (文件大小：47K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Philips Semiconductors

Product specification

Three quadrant triacs

guaranteed commutation

BTA216 series D, E and F

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivatedguaranteedcommutationtriacsin

a plastic envelope intended for use in motor

control circuits or with other highly inductive

loads. These devices balance the

requirements of commutation performance

and gate sensitivity. The "sensitive gate" E

series and "logic level" D series are intended

for interfacing with low power drivers,

including micro controllers.

SYMBOL

PARAMETER

MAX. UNIT

BTA216-

600D

600E

600F

V_DRM

Repetitive peak off-state

voltages

RMS on-state current

Non-repetitive peak on-state

current

600

I_T(RMS)

I_TSM

140

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

DESCRIPTION

tab

main terminal 1

main terminal 2

gate

1 2 3

tab main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

600¹

UNIT

V_DRM

Repetitive peak off-state

voltages

I_T(RMS)

I_TSM

RMS on-state current

full sine wave;

T_mb≤ 99 ˚C

Non-repetitive peak

on-state current

full sine wave;

T_j= 25 ˚C prior to

surge

t = 20 ms

140

150

t = 16.7 ms

I²t

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate power

Average gate power

t = 10 ms

A²s

A/µs

dI_T/dt

I_TM= 20 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

100

I_GM

P_GM

P_G(AV)

0.5

over any 20 ms

period

T_stg

T_j

Storage temperature

Operating junction

temperature

-40

150

125

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

April 2002

Rev 2.000

Philips Semiconductors

Product specification

Three quadrant triacs

guaranteed commutation

BTA216 series D, E and F

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

Thermal resistance

full cycle

1.2

1.7

K/W

junction to mounting base half cycle

R_{th j-a}

Thermal resistance

junction to ambient

in free air

STATIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

...E

UNIT

BTA216-

...D

...F

I_GT

Gate trigger current²

Latching current

V_D= 12 V; I_T= 0.1 A

T2+ G+

T2+ G-

T2- G-

I_L

V_D= 12 V; I_GT= 0.1 A

T2+ G+

T2+ G-

T2- G-

I_H

Holding current

V_D= 12 V; I_GT= 0.1 A

...D, E, F

V_T

On-state voltage

I_T= 20 A

1.5

V_GT

Gate trigger voltage

V_D= 12 V; I_T= 0.1 A

V_D= 400 V; I_T= 0.1 A;

T_j= 125 ˚C

0.25

I_D

Off-state leakage current

V_D= V_DRM(max); T_j= 125 ˚C

0.5

DYNAMIC CHARACTERISTICS

T_j= 25 ˚C unless otherwise stated

SYMBOL PARAMETER

CONDITIONS

BTA216-

MIN.

...E

MAX. UNIT

...D

...F

dV_D/dt

dI_com/dt

Critical rate of rise of

off-state voltage

V_DM= 67% V_DRM(max)

;

V/µs

A/ms

T_j= 110 ˚C; exponential

waveform; gate open

circuit

Critical rate of change of

commutating current

V_DM= 400 V; T_j= 125 ˚C;

I_T(RMS)= 16 A;

2.5

6.2

dV_com/dt = 10V/µs; gate

open circuit

Critical rate of change of

commutating current

V_DM= 400 V; T_j= 125 ˚C;

I_T(RMS)= 16 A;

dV_com/dt = 0.1V/µs; gate

open circuit

2 Device does not trigger in the T2-, G+ quadrant.

April 2002

Rev 2.000

Philips Semiconductors

Product specification

Three quadrant triacs

guaranteed commutation

BTA216 series D, E and F

Tmb(max) / C

= 180

IT(RMS) / A

BT139

Ptot / W

99 C

101

107

120

113

119

125

-50

Tmb / C

100

150

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P_tot, versus rms

on-state current, I_T(RMS), where α = conduction angle.

Fig.4. Maximum permissible rms current I_T(RMS)

versus mounting base temperature T_mb.

ITSM / A

1000

IT(RMS) / A

dI_T/dt limit

100

TSM

time

Tj initial = 25 C max

10ms 100ms

10us

100us

1ms

T / s

0.01

0.1

surge duration / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I_TSM, versus pulse width t_p, for

sinusoidal currents, t_p≤ 20ms.

Fig.5. Maximum permissible repetitive rms on-state

current I_T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T_mb≤ 99˚C.

ITSM / A

150

VGT(Tj)

VGT(25 C)

1.6

TSM

time

1.4

1.2

100

Tj initial = 25 C max

0.8

0.6

0.4

100

1000

-50

Tj / C

100

150

Number of cycles at 50Hz

Fig.3. Maximum permissible non-repetitive peak

on-state current I_TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage

V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.

April 2002

Rev 2.000

Philips Semiconductors

Product specification

Three quadrant triacs

guaranteed commutation

BTA216 series D, E and F

BT139

IT / A

IGT(Tj)

IGT(25°C)

Tj = 125 C

Tj = 25 C

2.5

T2+ G+

T2+ G-

T2- G-

typ

max

Vo = 1.195 V

Rs = 0.018 Ohms

1.5

0.5

1.5

VT / V

2.5

-50

Tj/°C

100

150

Fig.7. Normalised gate trigger current

I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.

Fig.10. Typical and maximum on-state characteristic.

IL(Tj)

IL(25 C)

Zth j-mb (K/W)

2.5

0.1

unidirectional

bidirectional

1.5

0.01

0.001

0.5

10us

0.1ms

1ms

10ms

tp / s

0.1s

10s

-50

Tj / C

100

150

Fig.8. Normalised latching current I_L(T_j)/ I_L(25˚C),

Fig.11. Transient thermal impedance Z_{th j-mb}, versus

pulse width t_p.

versus junction temperature T_j.

dIcom/dt (A/ms)

IH(Tj)

IH(25C)

100

F TYPE

E TYPE

D TYPE

2.5

1.5

0.5

Tj/˚C

100

120

140

-50

Tj / C

100

150

Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C),

Fig.12. Minimum, critical rate of change of

versus junction temperature T_j.

commutating current dI_com/dt versus junction

temperature, dV_com/dt = 10V/µs.

April 2002

Rev 2.000

Philips Semiconductors

Product specification

Three quadrant triacs

guaranteed commutation

BTA216 series D, E and F

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

4,5

max

10,3

max

1,3

3,7

2,8

5,9

min

15,8

max

3,0 max

not tinned

3,0

13,5

min

1,3

1 2 3

max

(2x)

0,9 max (3x)

0,6

2,4

2,54 2,54

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.

2. Epoxy meets UL94 V0 at 1/8".

April 2002

Rev 2.000

Philips Semiconductors

Product specification

Three quadrant triacs

guaranteed commutation

BTA216 series D, E and F

DEFINITIONS

DATA SHEET STATUS

DATA SHEET

STATUS³

PRODUCT

STATUS⁴

DEFINITIONS

Objective data

Development

This data sheet contains data from the objective specification for

product development. Philips Semiconductors reserves the right to

change the specification in any manner without notice

Preliminary data

Qualification

This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the specification without

notice, in order to improve the design and supply the best possible

product

Product data

Production

This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in

order to improve the design, manufacturing and supply. Changes will

be communicated according to the Customer Product/Process

Change Notification (CPCN) procedure SNW-SQ-650A

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 2002

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

3 Please consult the most recently issued datasheet before initiating or completing a design.

4 The product status of the device(s) described in this datasheet may have changed since this datasheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

April 2002

Rev 2.000

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